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Operando study of HfO2 atomic layer deposition on partially hydroxylated Si(111) 部分羟基化 Si(111) 上 HfO2 原子层沉积的运算研究
Pub Date : 2024-02-28 DOI: 10.1116/6.0003349
Rosemary Jones, Giulio D’Acunto, Payam Shayesteh, Indiana Pinsard, F. Rochet, F. Bournel, J. Gallet, Ashley R Head, J. Schnadt
The introduction of atomic layer deposition (ALD), to the microelectronics industry has introduced a large number of new possible materials able to be deposited in layers with atomic thickness control. One such material is the high-κ oxide HfO2; thermally stable and ultrathin HfO2 films deposited by ALD are a significant contender to replace SiO2 as the gate oxide in capacitor applications. We present a mechanistic study of the first deposition cycle of HfO2 on the Si(111) surface using tetrakis(dimethylamido) hafnium (TDMAHf) and water as precursors using operando ambient pressure x-ray photoelectron spectroscopy. Here, we show that the hydroxylation of the clean Si(111) surface by residual water vapor, resulting in a 0.3 monolayer coverage of hydroxyls, leads to instantaneous full surface coverage of TDMAHf. The change in the atomic ratio of Hf to C/N found during the first deposition half-cycle, however, does not match the assumed immediate ligand loss through reaction with surface hydroxyls. One would expect an immediate loss of ligands, indicated by a Hf:N ratio of approximately 1:3 as TDMAHf deposits onto the surface; however, a Hf:N ratio of 1:3.6 is observed. The partial hydroxylation on the Si(111) surface leads to binding through the TDMAHf ligand N atoms resulting in both N and CH3 being found remaining on the surface post water half-cycle. Although there is evidence of ligand exchange reactions occurring at Si–OH sites, it also seems that N binding can occur on bare Si, highlighting the complexity of the substrate/precursor reaction even when hydroxyls are present. Moreover, the initial low coverage of Si–OH/Si–H appears to severely limit the amount of Hf deposited, which we hypothesize is due to the specific geometry of the initial arrangement of Si–OH/Si–H on the rest- and adatoms.
原子层沉积(ALD)技术的引入为微电子行业带来了大量新材料,这些新材料可以通过原子厚度控制进行层沉积。其中一种材料就是高κ氧化物 HfO2;通过 ALD 沉积的热稳定超薄 HfO2 薄膜是取代 SiO2 作为电容器应用中栅极氧化物的重要竞争者。我们以四(二甲基氨基)铪(TDMAHf)和水为前驱体,利用操作环境压力 X 射线光电子能谱对 HfO2 在 Si(111) 表面的第一个沉积周期进行了机理研究。在这里,我们展示了残留水蒸气对清洁的 Si(111) 表面的羟基化作用,导致 0.3 单层羟基的覆盖,从而导致 TDMAHf 的瞬时全表面覆盖。然而,在第一个沉积半周期中发现的 Hf 与 C/N 原子比的变化与假定的通过与表面羟基反应而立即损失配体的情况不符。当 TDMAHf 沉积到表面时,Hf:N 的比率约为 1:3,这表明配体会立即损失;但观察到的 Hf:N 比率为 1:3.6。Si(111) 表面的部分羟基化导致通过 TDMAHf 配体的 N 原子结合,从而使 N 和 CH3 在水半周后残留在表面上。虽然有证据表明配体交换反应发生在 Si-OH 位点上,但 N 结合似乎也可能发生在裸硅上,这突出了底物/前驱体反应的复杂性,即使存在羟基也是如此。此外,Si-OH/Si-H 的初始低覆盖率似乎严重限制了 Hf 的沉积量,我们假设这是由于 Si-OH/Si-H 在其余原子和原子上的初始排列的特定几何形状造成的。
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引用次数: 0
2-mercaptobenzimidazole inhibits corrosion and prolongs the lifetime of an epoxy resin coating on a copper-62 alloy surface in a simulated marine environment at 40 °C 在 40 °C 的模拟海洋环境中,2-巯基苯并咪唑可抑制铜-62 合金表面环氧树脂涂层的腐蚀并延长其使用寿命
Pub Date : 2024-02-28 DOI: 10.1116/6.0003203
Jingkang Chen, Xu Li, Xujie Xiao, Chengfei Zhu
Epoxy coatings are widely used on metal surfaces in marine environments, but are subject to corrosion. How to improve the corrosion resistance of such materials has therefore become an important research topic. In this study, the corrosion inhibitor 2-mercaptobenzimidazole (MBI) was added to the organic coating of the epoxy resin on the surface of the copper-62 alloy to extend the service life of the coating in marine environments. The corrosion inhibition efficiency of MBI for the copper-62 alloy in simulated marine environments was investigated by means of immersion corrosion tests, Tafel polarization tests, and electrochemical impedance spectroscopy (EIS). The effects of MBI on the damage process and water transport of epoxy coatings were also studied by EIS. It has been shown that MBI acts as an adsorption corrosion inhibitor by electro-attractively adsorbing on the surface of a copper substrate. For a total mass fraction of 0.5 wt. %, the corrosion inhibition efficiency was more than 90%, and the corrosion current density of the copper-62 alloy in simulated seawater with MBI was 6.01 × 10−7 A cm−2. The corrosion current density of the copper-62 alloy in simulated seawater is 1.382 × 10−5 A cm−2. When MBI was added to the epoxy organic coating at a ratio of 0.5 wt. %, the diffusion coefficient of the coating was as low as 9.72 × 10−11 cm2 s−1, and the time to failure of the coating was extended to 1656h, compared to the epoxy coating without the corrosion inhibitor. It has been demonstrated that the addition of MBI can increase the service life of copper-62 alloy/epoxy coatings in marine environments effectively.
环氧树脂涂料广泛应用于海洋环境中的金属表面,但容易受到腐蚀。因此,如何提高此类材料的耐腐蚀性已成为一个重要的研究课题。本研究在铜-62 合金表面的环氧树脂有机涂层中添加了缓蚀剂 2-巯基苯并咪唑(MBI),以延长涂层在海洋环境中的使用寿命。通过浸泡腐蚀试验、塔菲尔极化试验和电化学阻抗谱(EIS),研究了 MBI 在模拟海洋环境中对铜-62 合金的缓蚀效果。EIS 还研究了 MBI 对环氧涂层的破坏过程和水迁移的影响。研究表明,MBI 通过电吸引吸附在铜基材表面,起到吸附缓蚀剂的作用。在总质量分数为 0.5 wt. % 时,缓蚀效率超过 90%,铜-62 合金在含 MBI 的模拟海水中的腐蚀电流密度为 6.01 × 10-7 A cm-2。铜-62 合金在模拟海水中的腐蚀电流密度为 1.382 × 10-5 A cm-2。当 MBI 以 0.5 wt. % 的比例添加到环氧有机涂层中时,涂层的扩散系数低至 9.72 × 10-11 cm2 s-1,与未添加缓蚀剂的环氧涂层相比,涂层的失效时间延长至 1656h。实验证明,添加 MBI 可有效提高铜-62 合金/环氧涂层在海洋环境中的使用寿命。
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引用次数: 0
Microstructures and improved properties of Cu–Mo alloys induced by high current pulsed electron beam irradiation 大电流脉冲电子束辐照诱导铜-钼合金的微观结构和更佳性能
Pub Date : 2024-02-28 DOI: 10.1116/6.0003374
Fangqiang Guo, Conglin Zhang, Jintong Guan, Chengjian Ma, Zirun Yang, Qingfeng Guan
In this paper, a Cu–Mo alloying layer with improved properties was fabricated by high current pulsed electron beam (HCPEB) irradiation. The microstructure of the modified layer was investigated by x-ray diffraction, scanning electron microscopy, and transmission electron microscopy. The microhardness and friction properties were also measured. After HCPEB irradiation, nano Mo particles, solid solution, and long-period superlattice structures were generated on the surface of Cu–Mo alloys, together with the formation of defect structures. These microstructures led to a significant increase in the surface hardness. The results of sliding wear tests indicated that the HCPEB-irradiated samples exhibited better properties compared with the initial one, which was attributed to the ultrafine Mo particles and the hardened surface.
本文利用大电流脉冲电子束(HCPEB)辐照技术制备了具有更好性能的铜钼合金层。通过 X 射线衍射、扫描电子显微镜和透射电子显微镜研究了改性层的微观结构。同时还测量了微硬度和摩擦性能。经 HCPEB 辐照后,铜钼合金表面产生了纳米钼颗粒、固溶体和长周期超晶格结构,并形成了缺陷结构。这些微结构显著提高了表面硬度。滑动磨损测试结果表明,与初始样品相比,经过 HCPEB 辐照的样品具有更好的性能,这归功于超细 Mo 粒子和硬化的表面。
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引用次数: 0
Bias voltage influence on the a-SiCx:H interlayer deposition using tetramethylsilane: Decorative applications of a-C:H thin films on steel 偏置电压对使用四甲基硅烷的 a-SiCx:H 层间沉积的影响:a-C:H 薄膜在钢铁上的装饰应用
Pub Date : 2024-02-28 DOI: 10.1116/6.0003328
M. Goldbeck, V. Piroli, J. S. Weber, C. D. Boeira, B. L. Perotti, N. K. Fukumasu, Fernando Alvarez, C. A. Figueroa, A. F. Michels
Hydrogenated amorphous carbon (a-C:H) is a type of coating vastly applied on steel alloys due to its low friction coefficient, high hardness, and chemical inertness. Also, its characteristic brilliant black color like onyx stone is desirable for decorative applications. Despite the beneficial properties conferred to ferrous substrates, the adhesion of a-C:H films is weakened by its residual stress. In order to improve the adhesion of a-C:H films/steel alloy structures, one adopted strategy is the addition of an interlayer. This research investigated the influence of the bias voltage applied on the deposition of hydrogenated amorphous silicon carbide (a-SiCx:H) interlayers, with tetramethylsilane (TMS) as the precursor, to promote adhesion in a-C:H/a-SiCx:H/ferrous alloy structures for decorative applications. The thicker interlayer was achieved at −600 V. Two regimes were proposed to explain this behavior considering ionization rates and resputtering rates and chemical reactions in plasma. The chemical structure in different regions of the a-SiCx:H interlayer was analyzed in detail. An increase in the applied bias voltage leads to oxygen incorporation at the a-C:H/a-SiCx:H interface. Higher bias voltages result in lower silicon content at the a-SiCx:H/steel interface, which is correlated to the −800 V sample’s poor adhesion. Finally, we have included a discussion about a new range of loads when a decorative piece is held by the hand where the critical loads for delamination of a-C:H coatings measured here are good enough for decorative applications.
氢化无定形碳(a-C:H)具有低摩擦系数、高硬度和化学惰性,是一种广泛应用于钢合金的涂层。此外,它像玛瑙石一样亮丽的黑色也是理想的装饰材料。尽管 a-C:H 薄膜具有对黑色基材有利的特性,但其残余应力会削弱其附着力。为了提高 a-C:H 薄膜/钢合金结构的附着力,采用的一种策略是添加中间膜。本研究调查了偏置电压对以四甲基硅烷(TMS)为前驱体的氢化无定形碳化硅(a-SiCx:H)中间膜沉积的影响,以促进装饰应用中 a-C:H/a-SiCx:H/ 铁合金结构的附着力。在-600 V电压下实现了较厚的夹层。考虑到等离子体中的电离率、重溅射率和化学反应,提出了两种机制来解释这种行为。对 a-SiCx:H 夹层不同区域的化学结构进行了详细分析。外加偏置电压的增加会导致氧在 a-C:H/a-SiCx:H 界面的掺入。偏置电压越高,a-SiCx:H/钢界面上的硅含量越低,这与-800 V样品的粘附性差有关。最后,我们还讨论了手持装饰件时的新负载范围,这里测得的 a-C:H 涂层脱层临界负载足以满足装饰应用的要求。
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引用次数: 0
Novel high-efficiency plasma nitriding process utilizing a high power impulse magnetron sputtering discharge 利用高功率脉冲磁控溅射放电的新型高效等离子氮化工艺
Pub Date : 2024-02-28 DOI: 10.1116/6.0003277
A. Ehiasarian, P. Hovsepian
Lifetime and biocompatibility of orthopedic implants are crucial in meeting the new challenges brought about by the fall in the patient age and the aging population. The high-load surfaces in contact with the biological environment must display enhanced tribological properties, biocompatibility, and reduced metal ion release in long-term clinical performance. Surface modification techniques such as nitriding can significantly improve the in-service behavior of the medical-grade alloys in current use. We report on a novel approach for nitriding of CoCrMo alloys using high power impulse magnetron sputtering (HIPIMS) discharge. The new nitriding process has been successfully carried out at the National HIPIMS Technology Centre at Sheffield Hallam University, UK, in an industrial size Hauzer 1000-4 system enabled with HIPIMS technology. While the nitriding ion flux is controlled by the HIPIMS magnetron plasma source, the ion energy can be independently set via the substrate bias. Implementing the HIPIMS source allows reducing the operational pressure by one order of magnitude compared to conventional dc plasma nitriding (DCPN). Plasma analyses have identified significantly enhanced production of ions of molecular nitrogen (N2+), atomic nitrogen (N+), and N2H+ radicals in the HIPIMS discharge compared to DCPN. Because of the low pressure of operation of the HIPIMS process, the energy of ions is similar to the bias voltage, whereas the high pressures used in DCPN cause severe losses in ion energy due to scattering collisions within the sheath. The high flux and high ion energy are primarily responsible for achieving a fourfold increase in process productivity as compared to state-of-the-art plasma nitriding processes. The nitrided surface layers exhibit excellent mechanical and tribological properties, which bring about significant improvements in hardness, fracture toughness, and wear. The protective function of the nitrided layer against corrosion in the aggressive environments of simulated body fluid is remarkably augmented. The barrier properties of the nitrided layer have been demonstrated through a reduction in metal ion release by as much as a factor of 2, 4, and 10 for Co, Cr, and Mo, respectively.
要应对患者年龄下降和人口老龄化带来的新挑战,骨科植入物的使用寿命和生物相容性至关重要。与生物环境接触的高负荷表面必须具有更强的摩擦学特性、生物相容性,并在长期临床使用中减少金属离子的释放。氮化等表面改性技术可显著改善目前使用的医用级合金的使用性能。我们报告了一种利用高功率脉冲磁控溅射(HIPIMS)放电对 CoCrMo 合金进行氮化处理的新方法。英国谢菲尔德哈勒姆大学的国家 HIPIMS 技术中心在采用 HIPIMS 技术的工业规模 Hauzer 1000-4 系统中成功实施了新的氮化工艺。氮化离子流量由 HIPIMS 磁控管等离子源控制,而离子能量则可通过基片偏压独立设置。与传统的直流等离子氮化(DCPN)相比,采用 HIPIMS 源可将工作压力降低一个数量级。等离子体分析表明,与 DCPN 相比,HIPIMS 放电中分子氮 (N2+)、原子氮 (N+) 和 N2H+ 自由基离子的产生量明显增加。由于 HIPIMS 过程的工作压力较低,离子的能量与偏置电压相近,而 DCPN 中使用的高压则会因护套内的散射碰撞而导致离子能量的严重损失。与最先进的等离子氮化工艺相比,高通量和高离子能量是工艺生产率提高四倍的主要原因。氮化表面层具有优异的机械和摩擦学特性,在硬度、断裂韧性和磨损方面都有显著改善。氮化层在模拟体液侵蚀环境中的抗腐蚀保护功能显著增强。氮化层的阻隔特性通过金属离子释放量的减少得到了证明,钴、铬和钼的释放量分别减少了 2 倍、4 倍和 10 倍。
{"title":"Novel high-efficiency plasma nitriding process utilizing a high power impulse magnetron sputtering discharge","authors":"A. Ehiasarian, P. Hovsepian","doi":"10.1116/6.0003277","DOIUrl":"https://doi.org/10.1116/6.0003277","url":null,"abstract":"Lifetime and biocompatibility of orthopedic implants are crucial in meeting the new challenges brought about by the fall in the patient age and the aging population. The high-load surfaces in contact with the biological environment must display enhanced tribological properties, biocompatibility, and reduced metal ion release in long-term clinical performance. Surface modification techniques such as nitriding can significantly improve the in-service behavior of the medical-grade alloys in current use. We report on a novel approach for nitriding of CoCrMo alloys using high power impulse magnetron sputtering (HIPIMS) discharge. The new nitriding process has been successfully carried out at the National HIPIMS Technology Centre at Sheffield Hallam University, UK, in an industrial size Hauzer 1000-4 system enabled with HIPIMS technology. While the nitriding ion flux is controlled by the HIPIMS magnetron plasma source, the ion energy can be independently set via the substrate bias. Implementing the HIPIMS source allows reducing the operational pressure by one order of magnitude compared to conventional dc plasma nitriding (DCPN). Plasma analyses have identified significantly enhanced production of ions of molecular nitrogen (N2+), atomic nitrogen (N+), and N2H+ radicals in the HIPIMS discharge compared to DCPN. Because of the low pressure of operation of the HIPIMS process, the energy of ions is similar to the bias voltage, whereas the high pressures used in DCPN cause severe losses in ion energy due to scattering collisions within the sheath. The high flux and high ion energy are primarily responsible for achieving a fourfold increase in process productivity as compared to state-of-the-art plasma nitriding processes. The nitrided surface layers exhibit excellent mechanical and tribological properties, which bring about significant improvements in hardness, fracture toughness, and wear. The protective function of the nitrided layer against corrosion in the aggressive environments of simulated body fluid is remarkably augmented. The barrier properties of the nitrided layer have been demonstrated through a reduction in metal ion release by as much as a factor of 2, 4, and 10 for Co, Cr, and Mo, respectively.","PeriodicalId":170900,"journal":{"name":"Journal of Vacuum Science & Technology A","volume":"47 12","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-02-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140421915","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
FEFF analysis of americium oxides 镅氧化物的 FEFF 分析
Pub Date : 2024-02-28 DOI: 10.1116/6.0003428
J. G. Tobin, S.-W. Yu, D. Shuh, S. Butorin
The Am N4,5 (4d3/2 and 4d5/2) and Am O4,5 (5d3/2 and 5d5/2) x-ray absorption spectroscopy (XAS) of americium sesquioxide (Am2O3) and americium dioxide (AmO2) has been evaluated with FEFF, a Green's function–based, multiple scattering code. Taking guidance from the intermediate coupling model (ICM), applicable to local and nonmagnetized samples, it is possible to completely reconstruct the experimental results for the N4,5 spectra, including the observed differences between the Am2O3 and the AmO2 cases. Although complicated by a more asymmetric line shape and difficult background variations, the FEFF analysis confirms the absence of core hole angular momentum coupling in Am O4,5 spectroscopy.
使用基于格林函数的多重散射代码 FEFF 对倍二氧化镅(Am2O3)和二氧化镅(AmO2)的 Am N4,5 (4d3/2 和 4d5/2)和 Am O4,5 (5d3/2 和 5d5/2)X 射线吸收光谱(XAS)进行了评估。在适用于局部和非磁化样品的中间耦合模型(ICM)的指导下,可以完全重建 N4,5 光谱的实验结果,包括观察到的 Am2O3 和 AmO2 之间的差异。尽管由于线形不对称和背景变化复杂,FEFF 分析证实 Am O4,5 光谱中不存在核洞角动量耦合。
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引用次数: 0
Assessing the feasibility of laser ablation coating removal (LACR) on legacy bridge steel: Coating removal and adhesion, and effects on mechanical properties 评估激光烧蚀涂层去除(LACR)在遗留桥梁钢材上的可行性:涂层去除和附着力以及对机械性能的影响
Pub Date : 2024-02-28 DOI: 10.1116/6.0003290
W. P. Moffat, S. Sharp, J. Provines, S. R. Agnew, J. M. Fitz-Gerald
The application of protective organic coatings is one of the most effective and commonly used corrosion mitigation strategies. To maintain the protective nature of coatings on long-term-exposed surfaces such as steel bridge components, coatings must be periodically removed and reapplied. A relatively new method called laser ablation coating removal (LACR), which incorporates a high energy nanosecond pulsed laser beam in combination with a high efficiency filtration system, allows for safe and effective removal of coatings and contamination from metal surfaces. In this study, LACR cleaning is tested on legacy bridge steel components to investigate the effect on substrate cleanliness and steel mechanical properties. These bridge sections were never blasted and contain a 20–100 μm thick mill-scale layer (iron oxide) below several coating layers (including lead-rich coatings). The top micron of the oxide layer is melted by LACR and also thermally insulates the underlying steel and prevents any melting within the metallic substrate. The resulting surfaces are analyzed using microscopy, hardness testing, tensile, and fatigue testing, and it is shown that LACR does not cause any measurable detrimental effects to the bulk mechanical properties of the bridge steel, as well as effectively removes all paint coatings. Furthermore, adhesion testing on LACR-cleaned substrates shows excellent adhesion, qualifying above adhesion requirements for coated steel.
使用有机保护涂料是最有效、最常用的缓蚀策略之一。为了保持涂层对钢桥构件等长期暴露表面的保护性,必须定期去除涂层并重新涂抹。一种相对较新的方法被称为激光烧蚀涂层清除(LACR),它将高能纳秒脉冲激光束与高效过滤系统相结合,可以安全有效地清除金属表面的涂层和污染物。在本研究中,LACR 清洁技术对传统桥梁钢构件进行了测试,以研究其对基底清洁度和钢材机械性能的影响。这些桥梁截面从未经过喷砂处理,在多个涂层(包括富铅涂层)下面含有 20-100 μm 厚的毫米级氧化层(氧化铁)。LACR 熔化了氧化层顶部的微米,同时还对下层钢材进行了热绝缘处理,防止金属基材内部发生任何熔化。使用显微镜、硬度测试、拉伸和疲劳测试对所产生的表面进行分析,结果表明 LACR 不会对桥梁钢材的整体机械性能造成任何可测量的不利影响,并能有效去除所有油漆涂层。此外,对 LACR 清洁过的基材进行的附着力测试表明,其附着力极佳,超过了涂层钢材的附着力要求。
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引用次数: 0
Current-carrying tribological behavior of copper alloy matrix and molybdenum alloy coating at high current density 铜合金基体和钼合金涂层在高电流密度下的载流摩擦学行为
Pub Date : 2024-02-28 DOI: 10.1116/6.0003313
Yu-jie Zhou, Yang Li, Na Tan, Bing-wen Lu, Wei Yin, Guo-liang Zhang, Meng Liu, Yu-Jun Cai, Qi-yao Deng, Xu Kong
Improving the current-carrying friction and wear resistance of copper alloy current-carrying friction subsets effectively is a hot topic. In this paper, a method of preparing high melting point molybdenum-based coating on copper alloy surfaces by laser cladding technology is presented. A large current (106 A/m2) comparison experiment is carried out with a self-made current-carrying friction device, and the failure mechanism is analyzed. The results show that the molybdenum-based coating significantly improves the adhesion problem between the friction partner and the copper alloy substrate, while the thickness of the stress layer caused by the current-carrying friction is reduced by about 7 times. The molybdenum-based coating significantly reduces the surface arc rate and has a lower friction interface temperature, thus retaining the Al2O3 self-lubricating phase. The research in this paper is expected to provide extended research ideas for the surface protection of current-carrying friction subsets of copper alloys.
有效提高铜合金载流摩擦副的载流摩擦性能和耐磨性是一个热门话题。本文介绍了一种利用激光熔覆技术在铜合金表面制备高熔点钼基涂层的方法。利用自制的载流摩擦装置进行了大电流(106 A/m2 )对比实验,并分析了失效机理。结果表明,钼基涂层显著改善了摩擦副与铜合金基体之间的粘附问题,同时载流摩擦产生的应力层厚度减少了约 7 倍。钼基涂层显著降低了表面电弧率,摩擦界面温度更低,从而保留了 Al2O3 自润滑相。本文的研究有望为铜合金载流摩擦副的表面保护提供扩展研究思路。
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引用次数: 0
High crystalline quality homoepitaxial Si-doped β-Ga2O3(010) layers with reduced structural anisotropy grown by hot-wall MOCVD 通过热壁 MOCVD 生长的具有较低结构各向异性的高结晶质量掺杂硅的β-Ga2O3(010)同向外延层
Pub Date : 2024-02-27 DOI: 10.1116/6.0003424
D. Gogova, D. Tran, V. Stanishev, V. Jokubavicius, L. Vines, M. Schubert, R. Yakimova, P. P. Paskov, V. Darakchieva
A new growth approach, based on the hot-wall metalorganic chemical vapor deposition concept, is developed for high-quality homoepitaxial growth of Si-doped single-crystalline β-Ga2O3 layers on (010)-oriented native substrates. Substrate annealing in argon atmosphere for 1 min at temperatures below 600 °C is proposed for the formation of epi-ready surfaces as a cost-effective alternative to the traditionally employed annealing process in oxygen-containing atmosphere with a time duration of 1 h at about 1000 °C. It is shown that the on-axis rocking curve widths exhibit anisotropic dependence on the azimuth angle with minima for in-plane direction parallel to the [001] and maximum for the [100] for both substrate and layer. The homoepitaxial layers are demonstrated to have excellent structural properties with a β-Ga2O3(020) rocking curve full-widths at half-maximum as low as 11 arc sec, which is lower than the corresponding one for the substrates (19 arc sec), even for highly Si-doped (low 1019 cm−3 range) layers. Furthermore, the structural anisotropy in the layer is substantially reduced with respect to the substrate. Very smooth surface morphology of the epilayers with a root mean square roughness value of 0.6 nm over a 5 × 5 μm2 area is achieved along with a high electron mobility of 69 cm2 V−1 s−1 at a free carrier concentration n=1.9×1019 cm−3. These values compare well with state-of-the-art parameters reported in the literature for β-Ga2O3(010) homoepitaxial layers with respective Si doping levels. Thermal conductivity of 17.4 Wm−1K−1 is determined along the [010] direction for the homoepitaxial layers at 300 K, which approaches the respective value of bulk crystal (20.6 Wm−1K−1). This result is explained by a weak boundary effect and a low dislocation density in the homoepitaxial layers.
基于热壁金属有机化学气相沉积概念,我们开发了一种新的生长方法,用于在(010)取向的原生基底上高质量地同向外延生长掺杂硅的单晶β-Ga2O3层。为了形成外延就绪表面,建议在低于 600 ℃ 的氩气环境中进行 1 分钟的基底退火,以替代传统的在 1000 ℃ 左右的含氧环境中进行 1 小时的退火过程,这是一种具有成本效益的方法。研究表明,基底和层的同轴摇摆曲线宽度与方位角呈各向异性关系,平行于[001]面内方向为最小值,[100]面内方向为最大值。同向外延层具有优异的结构特性,其 β-Ga2O3(020)摇摆曲线半最大值全宽低至 11 弧秒,低于基底的相应值(19 弧秒),即使是高掺硅层(低 1019 cm-3 范围)也是如此。此外,与基底相比,该层的结构各向异性大大降低。外延层的表面形态非常光滑,在 5 × 5 μm2 面积上的均方根粗糙度值为 0.6 nm,在自由载流子浓度 n=1.9×1019 cm-3 时,电子迁移率高达 69 cm2 V-1 s-1。这些数值与文献中报道的具有相应硅掺杂水平的 β-Ga2O3(010)同向外延层的最新参数相比,毫不逊色。在 300 K 时,沿[010]方向测定的同外延层热导率为 17.4 Wm-1K-1,接近块状晶体的相应值(20.6 Wm-1K-1)。这一结果的原因是同位外延层的边界效应较弱,位错密度较低。
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引用次数: 0
Thickness dependent thermal conductivity of strontium titanate thin films on silicon substrate 硅衬底上钛酸锶薄膜随厚度变化的热导率
Pub Date : 2024-02-27 DOI: 10.1116/6.0003320
R. Annam, Swapneel Danayat, Avinash Nayal, Fatema Tarannum, Matthew Chrysler, Joseph H. Ngai, Jiechao Jiang, Aaron J. Schmidt, J. Garg
Perovskite materials, of which strontium titanate (STO) and its thin films are an example, have attracted significant scientific interest because of their desirable properties and the potential to tune thermal conductivity by employing several techniques. Notably, strontium titanate thin films on silicon (Si) substrates serve as a fundamental platform for integrating various oxides onto Si substrates, making it crucial to understand the thermal properties of STO on Si. This work investigates the thermal conductivity of STO thin films on an Si substrate for varying film thicknesses (12, 50, 80, and 200 nm) at room temperature (∼300 K). The thin films are deposited using molecular beam epitaxy on the Si substrate and their thermal conductivity is characterized using the frequency domain thermoreflectance (FDTR) method. The measured values range from 7.4 ± 0.74 for the 200 nm thick film to 0.8 ± 0.1 W m−1 K−1 for the 12 nm thick film, showing a large effect of the film thickness on the thermal conductivity values. The trend of the values is diminishing with the corresponding decrease in the thin film thickness, with a reduction of 38%–93% in the thermal conductivity values, for film thicknesses ranging from 200 to 12 nm. This reduction in the values is relative to the bulk single crystal values of STO, which may range from 11 to 13.5 W m−1 K−1 [Yu et al., Appl. Phys. Lett. 92, 191911 (2008) and Fumega et al., Phys. Rev. Mater. 4, 033606 (2020)], as measured by our FDTR-based experiment. The study also explores the evaluation of volumetric heat capacity (Cp). The measured volumetric heat capacity for the 200 nm thin film is 3.07 MJ m−3 K−1, which is in reasonable agreement with the values available in the literature.
透镜材料(钛酸锶(STO)及其薄膜就是其中的一个例子)因其理想的特性以及通过采用多种技术调节热导率的潜力而引起了科学界的极大兴趣。值得注意的是,硅(Si)基底上的钛酸锶薄膜是将各种氧化物集成到硅基底上的基本平台,因此了解硅基底上的 STO 的热特性至关重要。这项工作研究了硅基底上不同厚度(12、50、80 和 200 nm)的 STO 薄膜在室温(∼300 K)下的热导率。薄膜采用分子束外延技术沉积在硅基底上,其热导率采用频域热反射(FDTR)方法进行表征。测量值范围从 200 nm 厚薄膜的 7.4 ± 0.74 到 12 nm 厚薄膜的 0.8 ± 0.1 W m-1 K-1,表明薄膜厚度对热导率值有很大影响。随着薄膜厚度的相应减小,热导率值也呈减小趋势,薄膜厚度在 200 纳米到 12 纳米之间时,热导率值减小了 38% 到 93%。相对于 STO 的块状单晶而言,热导率值的降低幅度在 11 到 13.5 W m-1 K-1 之间 [Yu 等人,Appl.92, 191911 (2008) and Fumega et al.4, 033606 (2020)],这是我们基于 FDTR 的实验所测得的结果。本研究还探讨了体积热容(Cp)的评估。测得的 200 纳米薄膜的体积热容为 3.07 MJ m-3 K-1,与文献中的数值基本一致。
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Journal of Vacuum Science & Technology A
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