Utilizing the combination of electron spin and the electric field, spintronic technology has become a revolutionary way to overcome the drawbacks of traditional charge-based electronics, such as power inefficiency and performance saturation. This paper reviews recent breakthroughs in spintronics, which have achieved ultrafast switching speeds and ultra-low energy consumption in magnetic tunnel junctions. By integrating advanced materials, such as topological insulators, two-dimensional ferromagnets, and heavy metals, we found the room-temperature stabilization of skyrmions with storage densities exceeding 1Tb/in2, enabling high-density nonvolatile memory. Furthermore, a hybrid complementary metal-oxide semiconductor-spintronic architecture is discussed, which reduces power consumption by 30 % in neuromorphic computing applications while maintaining compatibility with existing semiconductor technologies. Key innovations, such as optimized cobalt-iron-boron/magnesium oxide interfaces for tunneling magnetoresistance ratios exceeding 300 %, efficient spin-charge conversion in heavy metals, and voltage-controlled skyrmion devices for sub-0.1 pJ/bit operation, are also discussed. These advancements address scalability, thermal stability, and fabrication challenges, positioning spintronics as a cornerstone for next-generation memory, logic devices, and quantum computing. We also found that spintronic neuromorphic systems can achieve 20 TOP/s/w, outperforming traditional artificial intelligence accelerators. At the same time, spin qubits with 99.9 % fidelity offer a scalable pathway to quantum computing, underscoring spintronics' potential to revolutionize artificial intelligence, the Internet of Things, and quantum technologies, providing energy-efficient, high-performance solutions for the post-Moore era. Future efforts will focus on three-dimensional magnetic tunnel junction stacking with densities exceeding 1 Tb/mm3, and defect-tolerant materials for large-scale commercialization.
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