Pub Date : 2025-12-01DOI: 10.1016/j.jsamd.2025.101060
Md Saiful Islam , Fazliyana ‘Izzati Za'abar , Camellia Doroody , Sieh Kiong Tiong , Ahmad Wafi Mahmood Zuhdi , Kazi Sajedur Rahman , Zheng-Jie Feng , Nowshad Amin
This study investigates the influence of substrate temperature on the structural, optical, and electrical properties of MoS2 thin films deposited via radio-frequency (RF) magnetron sputtering. Films were grown at four substrate temperatures: room temperature (RT), 100 °C, 200 °C, and 300 °C. X-ray diffraction (XRD) and Raman spectroscopy revealed that increasing temperature enhanced crystallinity, reduced microstrain, and narrowed vibrational mode peaks, indicating thermally induced grain coarsening and reduced structural disorder. Field emission scanning electron microscopy (FESEM) showed a progression from irregular grains to more uniform and compact morphologies with elevated temperatures. Photoluminescence (PL) analysis identified both direct (∼1.83 eV) and indirect (∼1.63 eV) transitions, supporting the presence of multilayered domains and revealing enhanced optical quality at 200 °C. Electrical measurements indicated a trade-off between mobility and carrier concentration, with peak hole mobility (3.81 cm2/V·s) observed at 300 °C. These findings demonstrate that a sputtering temperature of 200 °C offers an optimal balance between crystallinity, electrical transport, and low structural disorder, making it ideal for integrating MoS2 thin films into high-performance optoelectronic devices.
{"title":"Thermal modulation of crystallinity and defect landscape in sputtered MoS2 thin films for optoelectronic applications","authors":"Md Saiful Islam , Fazliyana ‘Izzati Za'abar , Camellia Doroody , Sieh Kiong Tiong , Ahmad Wafi Mahmood Zuhdi , Kazi Sajedur Rahman , Zheng-Jie Feng , Nowshad Amin","doi":"10.1016/j.jsamd.2025.101060","DOIUrl":"10.1016/j.jsamd.2025.101060","url":null,"abstract":"<div><div>This study investigates the influence of substrate temperature on the structural, optical, and electrical properties of MoS<sub>2</sub> thin films deposited via radio-frequency (RF) magnetron sputtering. Films were grown at four substrate temperatures: room temperature (RT), 100 °C, 200 °C, and 300 °C. X-ray diffraction (XRD) and Raman spectroscopy revealed that increasing temperature enhanced crystallinity, reduced microstrain, and narrowed vibrational mode peaks, indicating thermally induced grain coarsening and reduced structural disorder. Field emission scanning electron microscopy (FESEM) showed a progression from irregular grains to more uniform and compact morphologies with elevated temperatures. Photoluminescence (PL) analysis identified both direct (∼1.83 eV) and indirect (∼1.63 eV) transitions, supporting the presence of multilayered domains and revealing enhanced optical quality at 200 °C. Electrical measurements indicated a trade-off between mobility and carrier concentration, with peak hole mobility (3.81 cm<sup>2</sup>/V·s) observed at 300 °C. These findings demonstrate that a sputtering temperature of 200 °C offers an optimal balance between crystallinity, electrical transport, and low structural disorder, making it ideal for integrating MoS<sub>2</sub> thin films into high-performance optoelectronic devices.</div></div>","PeriodicalId":17219,"journal":{"name":"Journal of Science: Advanced Materials and Devices","volume":"10 4","pages":"Article 101060"},"PeriodicalIF":6.8,"publicationDate":"2025-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145620610","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-12-01DOI: 10.1016/j.jsamd.2025.101052
Fabrizio Mariano , Mauro Leoncini , Luigi Carbone , Riccardo Scarfiello , Agostina Lina Capodilupo , Marco Pugliese , Alessandra Zizzari , Sonia Carallo , Eduardo Fabiano , Carmela Tania Prontera , Riccardo Manfredi , Antonio Maggiore , Giuseppe Gigli , Vincenzo Maiorano
The fabrication of OLEDs via fully solution-based techniques is a coveted advancement for large-area, high-luminance, and cost-effective organic light panels. A major challenge lies in preventing film dissolution or intermixing during multilayer deposition, especially when applying the electron transport layer (ETL) onto the emissive layer (EML).
This study explores the use of hydrophobic host: guest small-molecule systems in the EML, which are typically considered too fragile for successive solution processing. We demonstrate that an ETL can be deposited from a hydroalcoholic solution without damaging the EML, thanks to the hydrophobic nature of the materials used.
OLEDs were fabricated using both spin-coated and thermally evaporated ETLs to evaluate the performance. The best devices showed comparable results, reaching current efficiencies of ∼35 cd/A at 1000 cd/m2, with limited efficiency roll-off at higher luminance.
Importantly, FTIR analysis confirmed that residual water from the ETL solution is eliminated during annealing. Lifetime measurements under ambient conditions confirmed the robustness of the devices, with lifetimes of approximately 150 h from an initial luminance of 1000 cd/m2.
These results provide new insight into the potential of commercial small-molecules for high-performance, multilayer OLEDs fabricated entirely through solution-processing methods.
{"title":"Hydrophobic small-molecule emissive layers enabling fully solution-processed high-performance OLEDs","authors":"Fabrizio Mariano , Mauro Leoncini , Luigi Carbone , Riccardo Scarfiello , Agostina Lina Capodilupo , Marco Pugliese , Alessandra Zizzari , Sonia Carallo , Eduardo Fabiano , Carmela Tania Prontera , Riccardo Manfredi , Antonio Maggiore , Giuseppe Gigli , Vincenzo Maiorano","doi":"10.1016/j.jsamd.2025.101052","DOIUrl":"10.1016/j.jsamd.2025.101052","url":null,"abstract":"<div><div>The fabrication of OLEDs via fully solution-based techniques is a coveted advancement for large-area, high-luminance, and cost-effective organic light panels. A major challenge lies in preventing film dissolution or intermixing during multilayer deposition, especially when applying the electron transport layer (ETL) onto the emissive layer (EML).</div><div>This study explores the use of hydrophobic host: guest small-molecule systems in the EML, which are typically considered too fragile for successive solution processing. We demonstrate that an ETL can be deposited from a hydroalcoholic solution without damaging the EML, thanks to the hydrophobic nature of the materials used.</div><div>OLEDs were fabricated using both spin-coated and thermally evaporated ETLs to evaluate the performance. The best devices showed comparable results, reaching current efficiencies of ∼35 cd/A at 1000 cd/m<sup>2</sup>, with limited efficiency roll-off at higher luminance.</div><div>Importantly, FTIR analysis confirmed that residual water from the ETL solution is eliminated during annealing. Lifetime measurements under ambient conditions confirmed the robustness of the devices, with lifetimes of approximately 150 h from an initial luminance of 1000 cd/m<sup>2</sup>.</div><div>These results provide new insight into the potential of commercial small-molecules for high-performance, multilayer OLEDs fabricated entirely through solution-processing methods.</div></div>","PeriodicalId":17219,"journal":{"name":"Journal of Science: Advanced Materials and Devices","volume":"10 4","pages":"Article 101052"},"PeriodicalIF":6.8,"publicationDate":"2025-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145620607","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The large-scale application of dye-sensitized solar cells (DSSCs) faces several challenges, primarily due to the degradation caused by the UV radiation. This degradation results in decreased stability and lower energy conversion efficiency. Due to its geographical location, Indonesia receives high levels of UV rays throughout the year, making it crucial to prevent degradation of DSSC cells.This study successfully explored a novel potential of zinc salicylate complex as a UV absorber material with superior characteristics and more eco-friendly than current materials. The complex formation, characteristics, performance, and mechanism of zinc salicylate as a UV absorber were investigated through experimental and computational studies. The findings indicate that both intraligand charge transfer (ILCT) and ligand-ligand charge transfer (LLCT) significantly influenced the UV-absorbing capacity of the zinc salicylate complex than the HOMO LUMO gap. Higher concentration of the metal complex enhances UV absorption ability while maintaining effective visible light transmission. The UV protection mechanism involves a fluorescence phenomenon, which transforms absorbed UV light into visible light that contributes to electricity generation in DSSCs
{"title":"Unlocking the UV-absorbing performance of zinc salicylate complex for dye-sensitized solar cells protection: A computational and experimental study","authors":"Harsasi Setyawati , Syafsir Akhlus , Irmina Kris Murwani","doi":"10.1016/j.jsamd.2025.101057","DOIUrl":"10.1016/j.jsamd.2025.101057","url":null,"abstract":"<div><div>The large-scale application of dye-sensitized solar cells (DSSCs) faces several challenges, primarily due to the degradation caused by the UV radiation. This degradation results in decreased stability and lower energy conversion efficiency. Due to its geographical location, Indonesia receives high levels of UV rays throughout the year, making it crucial to prevent degradation of DSSC cells.This study successfully explored a novel potential of zinc salicylate complex as a UV absorber material with superior characteristics and more eco-friendly than current materials. The complex formation, characteristics, performance, and mechanism of zinc salicylate as a UV absorber were investigated through experimental and computational studies. The findings indicate that both intraligand charge transfer (ILCT) and ligand-ligand charge transfer (LLCT) significantly influenced the UV-absorbing capacity of the zinc salicylate complex than the HOMO LUMO gap. Higher concentration of the metal complex enhances UV absorption ability while maintaining effective visible light transmission. The UV protection mechanism involves a fluorescence phenomenon, which transforms absorbed UV light into visible light that contributes to electricity generation in DSSCs</div></div>","PeriodicalId":17219,"journal":{"name":"Journal of Science: Advanced Materials and Devices","volume":"10 4","pages":"Article 101057"},"PeriodicalIF":6.8,"publicationDate":"2025-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145690781","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-12-01DOI: 10.1016/j.jsamd.2025.101062
Songhua Zhang , Junchen Deng , Kuan Yew Cheong , Way Foong Lim
The effects of varying deposition time (15, 30, 45 and 60 min) towards terbium oxide (Tb4O7) by radio frequency (RF) magnetron sputtering were investigated as a high dielectric constant (k) film for silicon-based metal-oxide-semiconductor (MOS) capacitor and subjected to post-deposition annealing in nitrogen/nitrogen + oxygen/nitrogen (N2/N2+O2/N2) ambient. The incorporation of nitrogen into the oxygen vacancies inhibited further oxidation of the Si surface, diminishing the growth of the SiO2 interfacial layer (IL) by forming a nitrogen barrier layer. However, an excessive nitrogen accumulation occurred in the Tb4O7 film deposited for 15 min, leading to a degradation in interface quality. The increase of deposition time enhanced the total oxide thickness of the Tb4O7 film deposited for 30, 45, and 60 min, diminished gradually the adsorption and diffusion of nitrogen, and further triggered the interaction of oxygen and the Si substrate. Therefore, the interface quality was optimized with the reduction of interface trap density. The highest k value of 18 in this work was achieved by the Tb4O7 film deposited for 45 min, attributable to the optimized thickness of high-k Tb4O7 film and low k SiO2 IL at an appropriate nitrogen composition, the relatively high breakdown field (EB ∼ 2.25 MV/cm), as well as nearly the lowest interface trap density (Dit ∼ 3.57 × 1012 eV−1cm−2 at 0.40 eV), which proposed its potential as a high-k film for MOS devices. Corresponding effects were also systematically investigated by the physical and electrical properties of the Tb4O7 film at different deposition times in this work.
{"title":"Deposition-time-dependent structural and electrical characteristics of terbium oxide (Tb4O7) films for high-k MOS applications","authors":"Songhua Zhang , Junchen Deng , Kuan Yew Cheong , Way Foong Lim","doi":"10.1016/j.jsamd.2025.101062","DOIUrl":"10.1016/j.jsamd.2025.101062","url":null,"abstract":"<div><div>The effects of varying deposition time (15, 30, 45 and 60 min) towards terbium oxide (Tb<sub>4</sub>O<sub>7</sub>) by radio frequency (RF) magnetron sputtering were investigated as a high dielectric constant (k) film for silicon-based metal-oxide-semiconductor (MOS) capacitor and subjected to post-deposition annealing in nitrogen/nitrogen + oxygen/nitrogen (N<sub>2</sub>/N<sub>2</sub>+O<sub>2</sub>/N<sub>2</sub>) ambient. The incorporation of nitrogen into the oxygen vacancies inhibited further oxidation of the Si surface, diminishing the growth of the SiO<sub>2</sub> interfacial layer (IL) by forming a nitrogen barrier layer. However, an excessive nitrogen accumulation occurred in the Tb<sub>4</sub>O<sub>7</sub> film deposited for 15 min, leading to a degradation in interface quality. The increase of deposition time enhanced the total oxide thickness of the Tb<sub>4</sub>O<sub>7</sub> film deposited for 30, 45, and 60 min, diminished gradually the adsorption and diffusion of nitrogen, and further triggered the interaction of oxygen and the Si substrate. Therefore, the interface quality was optimized with the reduction of interface trap density. The highest k value of 18 in this work was achieved by the Tb<sub>4</sub>O<sub>7</sub> film deposited for 45 min, attributable to the optimized thickness of high-k Tb<sub>4</sub>O<sub>7</sub> film and low k SiO<sub>2</sub> IL at an appropriate nitrogen composition, the relatively high breakdown field (E<sub>B</sub> ∼ 2.25 MV/cm), as well as nearly the lowest interface trap density (D<sub>it</sub> ∼ 3.57 × 10<sup>12</sup> eV<sup>−1</sup>cm<sup>−2</sup> at 0.40 eV), which proposed its potential as a high-k film for MOS devices. Corresponding effects were also systematically investigated by the physical and electrical properties of the Tb<sub>4</sub>O<sub>7</sub> film at different deposition times in this work.</div></div>","PeriodicalId":17219,"journal":{"name":"Journal of Science: Advanced Materials and Devices","volume":"10 4","pages":"Article 101062"},"PeriodicalIF":6.8,"publicationDate":"2025-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145620595","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This study introduces a novel Alternating Current Field Measurement (ACFM) probe based on a Rotating Three-Pole Magnetization (RTPM) configuration integrated with a flexible magnetic coil array sensor. Conventional Eddy Current Testing (ECT) and Magnetic Flux Leakage (MFL) techniques face inherent limitations. ECT is highly sensitive to lift-off and coating thickness, while MFL requires strong magnetization and is restricted to ferromagnetic materials. In contrast, ACFM requires only a small alternating magnetic field to induce surface currents, enabling non-contact and coating-tolerant inspection with direct measurement of magnetic field perturbations (Bz) caused by surface-cracks. However, conventional ACFM systems lose sensitivity to cracks parallel to the induced current direction. To overcome this limitation, the proposed RTPM design generates a uniform in-plane rotating magnetic field, enabling orientation-independent crack detection. Three-dimensional finite element simulations confirm homogeneous induced currents and a clear Bz response at defect sites. Experimental validation on aluminum and steel specimens demonstrates reliable detection of surface cracks as small as 1 mm in any orientation, with stable signals maintained at lift-off distances up to 2 mm. Moreover, the system effectively identifies defects in weld zones, where conventional ACFM, ECT, and MFL methods often struggle due to magnetic and conductivity variations. These results highlight the superior sensitivity, robustness, and practical applicability of the proposed RTPM-based ACFM system for rapid non-destructive inspection of complex industrial structures.
{"title":"Omnidirectional crack detection in welded structures using a Rotating Three-Pole Magnetization system with a flexible coil array sensor","authors":"Tran Thi Hoai Dung , Le Quang Trung , Nguyen Duc Khuong , Tran Mach Tuan Kiet , Honoka Fukuda , Naoya Kasai , Kouichi Sekino","doi":"10.1016/j.jsamd.2025.101063","DOIUrl":"10.1016/j.jsamd.2025.101063","url":null,"abstract":"<div><div>This study introduces a novel Alternating Current Field Measurement (ACFM) probe based on a Rotating Three-Pole Magnetization (RTPM) configuration integrated with a flexible magnetic coil array sensor. Conventional Eddy Current Testing (ECT) and Magnetic Flux Leakage (MFL) techniques face inherent limitations. ECT is highly sensitive to lift-off and coating thickness, while MFL requires strong magnetization and is restricted to ferromagnetic materials. In contrast, ACFM requires only a small alternating magnetic field to induce surface currents, enabling non-contact and coating-tolerant inspection with direct measurement of magnetic field perturbations (B<sub>z</sub>) caused by surface-cracks. However, conventional ACFM systems lose sensitivity to cracks parallel to the induced current direction. To overcome this limitation, the proposed RTPM design generates a uniform in-plane rotating magnetic field, enabling orientation-independent crack detection. Three-dimensional finite element simulations confirm homogeneous induced currents and a clear B<sub>z</sub> response at defect sites. Experimental validation on aluminum and steel specimens demonstrates reliable detection of surface cracks as small as 1 mm in any orientation, with stable signals maintained at lift-off distances up to 2 mm. Moreover, the system effectively identifies defects in weld zones, where conventional ACFM, ECT, and MFL methods often struggle due to magnetic and conductivity variations. These results highlight the superior sensitivity, robustness, and practical applicability of the proposed RTPM-based ACFM system for rapid non-destructive inspection of complex industrial structures.</div></div>","PeriodicalId":17219,"journal":{"name":"Journal of Science: Advanced Materials and Devices","volume":"10 4","pages":"Article 101063"},"PeriodicalIF":6.8,"publicationDate":"2025-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145690772","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-12-01DOI: 10.1016/j.jsamd.2025.101046
AhlamI. Al-Sulami , Nuha Y. Elamin , Amani M. Al Harthi , Eman Eldosari , Yasmeen G. Abou El Reash , M.O. Farea , E.M. Abdelrazek , A. Rajeh
{"title":"Corrigendum to “Structural, optical, and electrical properties of Bi2O3/MWCNT-doped PVA/NaAlg nanocomposite films for flexible electronic applications” [J. Sci.: Adv. Mater. Dev., 10 (4) (2025) 100979]","authors":"AhlamI. Al-Sulami , Nuha Y. Elamin , Amani M. Al Harthi , Eman Eldosari , Yasmeen G. Abou El Reash , M.O. Farea , E.M. Abdelrazek , A. Rajeh","doi":"10.1016/j.jsamd.2025.101046","DOIUrl":"10.1016/j.jsamd.2025.101046","url":null,"abstract":"","PeriodicalId":17219,"journal":{"name":"Journal of Science: Advanced Materials and Devices","volume":"10 4","pages":"Article 101046"},"PeriodicalIF":6.8,"publicationDate":"2025-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145747046","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-11-19DOI: 10.1016/j.jsamd.2025.101053
R. Raman , D. Balasubramanian , Mohanraj Kumar , N. Jhansi , M.A. Sayed , Essam H. Ibrahim , Mohd Shkir
The Ag-doped α-CuV2O6 nanoparticles, with doping levels of 2, 4, and 6 wt%, were synthesized using a hydrothermal process, followed by the incorporation of varying concentrations at those same levels. This study examined how different doping levels affected the photocatalytic properties and antibacterial effectiveness of the samples, revealing that the 6 wt% doping level exhibited the highest efficiency in both areas. The triclinic structure of the synthesized Ag-doped α-CuV2O6 nanoparticles at different doping levels was confirmed through X-ray diffraction analysis. The calculated crystallite size indicated an increase consistent with higher doping levels. SEM was used to analyze the morphological features of the nanoparticles, and EDS confirmed the presence of Ag, Cu, V, and O in the synthesized nanoparticles. Furthermore, XPS analysis indicated the presence of Ag, Cu, O, and V, with only trace amounts of absorbed carbon, confirming the purity of the Ag/α-CuV2O6 phase with a triclinic structure. UV–Visible spectrophotometry measurements revealed a decrease in band gap values as doping levels increased. A distinct peak in the PL emission spectra within the green wavelength range indicated the formation of deep energy levels within the samples' band gap. The photocatalytic activity of the synthesized materials for degrading methylene blue dye under sunlight was evaluated using a UV–Visible spectrometer. The degradation efficiency increased with higher doping concentrations, reaching a maximum at 6 wt%. Values rose from 90.02 % for 2 wt% Ag to 96.20 % for 6 wt% Ag. The antibacterial properties of the synthesized compounds were tested against Gram-negative bacterial strains, especially Escherichia coli, resulting in noticeably larger inhibition zones. The bacterial inhibition zones for Ag-doped α-CuV2O6 ranged from 4 mm at 2 wt% Ag to 16 mm at 6 wt% Ag. The nanoparticles with 6 wt% doping showed increased antibacterial activity, attributed to their significantly larger surface area, which boosted their effectiveness.
{"title":"Exploring the innovative impact of silver doping on the photocatalytic dye degradation and antibacterial efficacy of α-CuV2O6 nanoparticles","authors":"R. Raman , D. Balasubramanian , Mohanraj Kumar , N. Jhansi , M.A. Sayed , Essam H. Ibrahim , Mohd Shkir","doi":"10.1016/j.jsamd.2025.101053","DOIUrl":"10.1016/j.jsamd.2025.101053","url":null,"abstract":"<div><div>The Ag-doped α-CuV<sub>2</sub>O<sub>6</sub> nanoparticles, with doping levels of 2, 4, and 6 wt%, were synthesized using a hydrothermal process, followed by the incorporation of varying concentrations at those same levels. This study examined how different doping levels affected the photocatalytic properties and antibacterial effectiveness of the samples, revealing that the 6 wt% doping level exhibited the highest efficiency in both areas. The triclinic structure of the synthesized Ag-doped α-CuV<sub>2</sub>O<sub>6</sub> nanoparticles at different doping levels was confirmed through X-ray diffraction analysis. The calculated crystallite size indicated an increase consistent with higher doping levels. SEM was used to analyze the morphological features of the nanoparticles, and EDS confirmed the presence of Ag, Cu, V, and O in the synthesized nanoparticles. Furthermore, XPS analysis indicated the presence of Ag, Cu, O, and V, with only trace amounts of absorbed carbon, confirming the purity of the Ag/α-CuV<sub>2</sub>O<sub>6</sub> phase with a triclinic structure. UV–Visible spectrophotometry measurements revealed a decrease in band gap values as doping levels increased. A distinct peak in the PL emission spectra within the green wavelength range indicated the formation of deep energy levels within the samples' band gap. The photocatalytic activity of the synthesized materials for degrading methylene blue dye under sunlight was evaluated using a UV–Visible spectrometer. The degradation efficiency increased with higher doping concentrations, reaching a maximum at 6 wt%. Values rose from 90.02 % for 2 wt% Ag to 96.20 % for 6 wt% Ag. The antibacterial properties of the synthesized compounds were tested against Gram-negative bacterial strains, especially Escherichia coli, resulting in noticeably larger inhibition zones. The bacterial inhibition zones for Ag-doped α-CuV<sub>2</sub>O<sub>6</sub> ranged from 4 mm at 2 wt% Ag to 16 mm at 6 wt% Ag. The nanoparticles with 6 wt% doping showed increased antibacterial activity, attributed to their significantly larger surface area, which boosted their effectiveness.</div></div>","PeriodicalId":17219,"journal":{"name":"Journal of Science: Advanced Materials and Devices","volume":"11 1","pages":"Article 101053"},"PeriodicalIF":6.8,"publicationDate":"2025-11-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145749523","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-11-13DOI: 10.1016/j.jsamd.2025.101049
Mohammad Fazlul Haque , Seungman Park , Daejong Yang
Gas sensing in extreme environments is critical for ensuring safety and compliance across various industries, particularly in applications involving high temperatures, high humidity, radiation exposure, and corrosive atmospheres. In this article, we review recent and important research and their findings on different gas sensing technologies, especially for harsh environments. Five prominent gas sensor technologies—resistive, electrochemical, catalytic combustion, optical, and absorption-based gas sensors—are critically examined with a focus on their gas sensing performance in harsh environments. The effects of these harsh environments on sensing performance and recent progress in overcoming these effects are discussed. Other sensor system components that are susceptible to harsh environments, such as electronics, wiring, mounting fixtures, etc., are also discussed. By analyzing recent advancements and emerging trends in gas sensing and other related technologies, this work provides a comprehensive understanding of how these sensors and sensing systems can be optimized for reliable performance in an array of harsh environments.
{"title":"Gas sensors in harsh environments: Challenges and advances in high temperature, high humidity, radiative and corrosive conditions","authors":"Mohammad Fazlul Haque , Seungman Park , Daejong Yang","doi":"10.1016/j.jsamd.2025.101049","DOIUrl":"10.1016/j.jsamd.2025.101049","url":null,"abstract":"<div><div>Gas sensing in extreme environments is critical for ensuring safety and compliance across various industries, particularly in applications involving high temperatures, high humidity, radiation exposure, and corrosive atmospheres. In this article, we review recent and important research and their findings on different gas sensing technologies, especially for harsh environments. Five prominent gas sensor technologies—resistive, electrochemical, catalytic combustion, optical, and absorption-based gas sensors—are critically examined with a focus on their gas sensing performance in harsh environments. The effects of these harsh environments on sensing performance and recent progress in overcoming these effects are discussed. Other sensor system components that are susceptible to harsh environments, such as electronics, wiring, mounting fixtures, etc., are also discussed. By analyzing recent advancements and emerging trends in gas sensing and other related technologies, this work provides a comprehensive understanding of how these sensors and sensing systems can be optimized for reliable performance in an array of harsh environments.</div></div>","PeriodicalId":17219,"journal":{"name":"Journal of Science: Advanced Materials and Devices","volume":"10 4","pages":"Article 101049"},"PeriodicalIF":6.8,"publicationDate":"2025-11-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145575883","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-11-13DOI: 10.1016/j.jsamd.2025.101050
Wentao Xiong , Kaiwen Wei , Kunming Wang , Yichao Ding , Fanggong Cai , Shihao Wang , Zhaofei Huang
This study introduces an innovative method that integrates instantaneous undercooling-induced nucleation, semi-solid rheological squeeze casting, and T6 heat treatment (525 °C solution treatment for 3 h followed by 155 °C artificial aging for 8 h) to produce A356 alloy castings with enhanced strength and plasticity. The investigation examines the impact of key structural components—single-waved protrusion (L = 225 mm) and double-waved protrusion (L = 400 mm)—on the microstructure and mechanical properties of A356 alloy castings. The results demonstrate that when L = 400 mm (referred to as RSC-400), the primary α-Al grains are small and uniform, secondary nucleation of the α2-Al phase is nearly absent, and the eutectic Si phase transitions from sharp dendritic forms to fine rod-like or nearly spherical shapes. In contrast, the RSC-225 sample exhibits coarser grains, significant agglomeration of the eutectic Si phase, and the presence of harmful Fe-rich β-Al5FeSi and π-Al8Mg3FeSi6 phases. After a T6 heat treatment, the microstructure of the RSC-400-T6 sample further improves in sphericity, with the eutectic Si phase passivated and a notable reduction in the Fe-rich β phase. The precipitation strengthening mechanism is effectively activated. Tensile tests reveal that the RSC-400-T6 sample achieves a tensile strength of up to 260.74 MPa and an elongation of 10.03 %, outperforming other samples processed by different methods in this study. This research demonstrates that the synergistic effects of cooling channel length, semi-solid rheological squeeze casting, and T6 heat treatment can effectively control microstructural development and optimize the mechanical properties of A356 alloys, providing a theoretical and practical foundation for the efficient, low-energy, and precise manufacturing of high-performance aluminum alloy components.
{"title":"A novel semi-solid rheo-squeeze strategy for optimizing the microstructure and mechanical properties of A356 aluminum alloy","authors":"Wentao Xiong , Kaiwen Wei , Kunming Wang , Yichao Ding , Fanggong Cai , Shihao Wang , Zhaofei Huang","doi":"10.1016/j.jsamd.2025.101050","DOIUrl":"10.1016/j.jsamd.2025.101050","url":null,"abstract":"<div><div>This study introduces an innovative method that integrates instantaneous undercooling-induced nucleation, semi-solid rheological squeeze casting, and T6 heat treatment (525 °C solution treatment for 3 h followed by 155 °C artificial aging for 8 h) to produce A356 alloy castings with enhanced strength and plasticity. The investigation examines the impact of key structural components—single-waved protrusion (L = 225 mm) and double-waved protrusion (L = 400 mm)—on the microstructure and mechanical properties of A356 alloy castings. The results demonstrate that when L = 400 mm (referred to as RSC-400), the primary α-Al grains are small and uniform, secondary nucleation of the α2-Al phase is nearly absent, and the eutectic Si phase transitions from sharp dendritic forms to fine rod-like or nearly spherical shapes. In contrast, the RSC-225 sample exhibits coarser grains, significant agglomeration of the eutectic Si phase, and the presence of harmful Fe-rich β-Al<sub>5</sub>FeSi and π-Al<sub>8</sub>Mg<sub>3</sub>FeSi<sub>6</sub> phases. After a T6 heat treatment, the microstructure of the RSC-400-T6 sample further improves in sphericity, with the eutectic Si phase passivated and a notable reduction in the Fe-rich β phase. The precipitation strengthening mechanism is effectively activated. Tensile tests reveal that the RSC-400-T6 sample achieves a tensile strength of up to 260.74 MPa and an elongation of 10.03 %, outperforming other samples processed by different methods in this study. This research demonstrates that the synergistic effects of cooling channel length, semi-solid rheological squeeze casting, and T6 heat treatment can effectively control microstructural development and optimize the mechanical properties of A356 alloys, providing a theoretical and practical foundation for the efficient, low-energy, and precise manufacturing of high-performance aluminum alloy components.</div></div>","PeriodicalId":17219,"journal":{"name":"Journal of Science: Advanced Materials and Devices","volume":"10 4","pages":"Article 101050"},"PeriodicalIF":6.8,"publicationDate":"2025-11-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145575880","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-11-13DOI: 10.1016/j.jsamd.2025.101054
Tejas , A. Princy , S. Masilla Moses Kennedy , M.I. Sayyed , Sudha D. Kamath
In this work, dual-emission phosphors based on Ba2ZnSi2O7 co-doped with Trivalent Terbium and Trivalent Dysprosium ions were successfully synthesized using a high-temperature solid-state method. X-ray diffraction analysis confirmed the monoclinic crystal structure with C2/c space group and phase purity of the materials, further validated by Rietveld refinement. Scanning electron microscopy revealed irregularly shaped nanoparticles in the nanometer range. Under UV excitation at room temperature, the phosphors exhibited characteristic green and yellow emissions attributed to Tb3+ and Dy3+, respectively. The optimal Dy3+ doping level was found to be 1.5 mol%, which also showed an increasing bandgap trend with higher Dy3+ concentrations. FTIR spectra confirmed no structural variation even after co-doping Dy3+ with Tb3+. TGA curves were analysed, and they were found to be stable after 200 °C with minimum loss of weight. Temperature-dependent photoluminescence studies indicated that Dy3+ emission underwent significant thermal quenching, with an activation energy of 0.152 eV and a quenching temperature of 382 K, making the material suitable for LED applications. The low phonon energy also revealed their suitability for producing optical thermometry sensors with materials. In contrast, the Tb3+ emission remained relatively stable with temperature variations. Temperature sensing capabilities were evaluated using fluorescence intensity ratio and lifetime-based methods, achieving maximum relative sensitivities of 4.96 % K−1 at 298 K and 1.64 % K−1 at 498 K, respectively. These findings highlight the potential of Tb3+/Dy3+ co-doped Ba2ZnSi2O7 phosphors as promising candidates for optical thermometry technologies.
{"title":"Temperature-responsive dual-emission Ba2ZnSi2O7 phosphors co-doped with Tb3+ and Dy3+ for optical thermometry applications","authors":"Tejas , A. Princy , S. Masilla Moses Kennedy , M.I. Sayyed , Sudha D. Kamath","doi":"10.1016/j.jsamd.2025.101054","DOIUrl":"10.1016/j.jsamd.2025.101054","url":null,"abstract":"<div><div>In this work, dual-emission phosphors based on Ba<sub>2</sub>ZnSi<sub>2</sub>O<sub>7</sub> co-doped with Trivalent Terbium and Trivalent Dysprosium ions were successfully synthesized using a high-temperature solid-state method. X-ray diffraction analysis confirmed the monoclinic crystal structure with C2/c space group and phase purity of the materials, further validated by Rietveld refinement. Scanning electron microscopy revealed irregularly shaped nanoparticles in the nanometer range. Under UV excitation at room temperature, the phosphors exhibited characteristic green and yellow emissions attributed to Tb<sup>3+</sup> and Dy<sup>3+</sup>, respectively. The optimal Dy<sup>3+</sup> doping level was found to be 1.5 mol%, which also showed an increasing bandgap trend with higher Dy<sup>3+</sup> concentrations. FTIR spectra confirmed no structural variation even after co-doping Dy<sup>3+</sup> with Tb<sup>3+</sup>. TGA curves were analysed, and they were found to be stable after 200 °C with minimum loss of weight. Temperature-dependent photoluminescence studies indicated that Dy<sup>3+</sup> emission underwent significant thermal quenching, with an activation energy of 0.152 eV and a quenching temperature of 382 K, making the material suitable for LED applications. The low phonon energy also revealed their suitability for producing optical thermometry sensors with materials. In contrast, the Tb<sup>3+</sup> emission remained relatively stable with temperature variations. Temperature sensing capabilities were evaluated using fluorescence intensity ratio and lifetime-based methods, achieving maximum relative sensitivities of 4.96 % K<sup>−1</sup> at 298 K and 1.64 % K<sup>−1</sup> at 498 K, respectively. These findings highlight the potential of Tb<sup>3+</sup>/Dy<sup>3+</sup> co-doped Ba<sub>2</sub>ZnSi<sub>2</sub>O<sub>7</sub> phosphors as promising candidates for optical thermometry technologies.</div></div>","PeriodicalId":17219,"journal":{"name":"Journal of Science: Advanced Materials and Devices","volume":"10 4","pages":"Article 101054"},"PeriodicalIF":6.8,"publicationDate":"2025-11-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145575881","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
扫码关注我们
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号