Three novel rare-earth-doped indium-zinc oxide (RE-IZO) semiconductor targets, specifically PrIZO, NdIZO, and TbIZO, were synthesized via a defect-engineered sintering process. These targets were subsequently employed in magnetron sputtering to deposit high-mobility thin films, which functioned as channel layers in thin-film transistors (TFTs). Firstly, the mechanism of doping elements' influence on the phase regulation and grain refinement of these three targets during the densification process was systematically investigated, combined with first-principles calculations. The formation of PrInO3 and NdInO3 secondary phases during sintering significantly enhanced grain boundary migration resistance. This phenomenon stemmed from the significant mismatch in ionic radii between Pr3+ (0.99 Å)/Nd3+ (0.98 Å) and In3+(0.80 Å), which exceeded the mismatch in ionic radii between Tb3+ (0.92 Å) and In3+. The results showed that the densities of PrIZO and NdIZO targets were 99.7 % and 99.8 %, respectively, with grain sizes of 2.6 μm and 3.9 μm, and electrical conductivities of 2.2 mΩ cm and 5.2 mΩ cm, respectively, outperforming TbIZO target (density 95.1 %, grain size 4.4 μm, resistivity 8.1 mΩ cm). Subsequently, amorphous-structured, ultra-smooth-surface (Ra < 0.5 nm), and highly uniform PrIZO, NdIZO, and the TbIZO transparent conductive films were prepared via optimized magnetron sputtering. As channel layers for thin-film transistors (TFTs), these films exhibit excellent electrical properties: Ion/Ioff >0.9, μsat >21 cm2/V·s, threshold voltage <2 V, and subthreshold swing <0.3 V/dec. NdIZO TFTs exhibit the smallest threshold voltage shift (ΔVth = 0.6 V) under positive bias stress (PBS), demonstrating excellent bias stability. The results showed that the better the overall performance of the targets, the better the performance of the TFT devices. This work provided an effective research strategy for developing channel layer materials for high-performance TFT devices.
扫码关注我们
求助内容:
应助结果提醒方式:
