Pub Date : 1985-01-01DOI: 10.2109/JCERSJ1950.93.1077_225
Y. Fujiki, T. Sasaki, Y. Komatsu
From a viewpoint of the treatment of high level radioactive liquid waste , the immobilization of divalent transition metal ions from aqueous solutions was studied by the use of the crystalline hydrated titania (H2Ti2O5• nH2O) fibers as an ion-adsorbent . The each metal ion was saturately adsorbed on the fibrous adsorbent from the aqueous solution of the divalent transition metal acetate. The adsorbed metal ions were immobilized in crystal lattices as main components of various titanate minerals after the sintering treatment. The copper ions were immobilized into the mineral assemblage of rutile, and Cu2TiO3 and Cu3TiO4 phases having a complex crystal structure . Zinc ions were fixed into the mineral assemblage of rutile and a Zn2TiO4 phase of the inverse spinel structure. Each metal ion of manganese, cobalt and nickel was immobilized into the same mineral assemblage of rutile and a MTiO3 (M=Mn, Co, and Ni) phase of the ilmenite structure . Rutile in these immobilizers occurs as a matrix mineral in the largest amount. The leachability of each metal ion in the immobilizers was measured under normal atmospheric and hydrothermal conditions . The results of the former indicated to be very stable with high leach resistance of maximal 3.210-9 gcmd-1 of mangnese ion, and the results of the latter also indicated to be very stable with maximal 9.1109g• cm2d-1 of nickel ion. [Received September 13, 1984]
{"title":"Immobilization of divalent transition metals from aqueous solutions using crystalline hydrated titania fibers","authors":"Y. Fujiki, T. Sasaki, Y. Komatsu","doi":"10.2109/JCERSJ1950.93.1077_225","DOIUrl":"https://doi.org/10.2109/JCERSJ1950.93.1077_225","url":null,"abstract":"From a viewpoint of the treatment of high level radioactive liquid waste , the immobilization of divalent transition metal ions from aqueous solutions was studied by the use of the crystalline hydrated titania (H2Ti2O5• nH2O) fibers as an ion-adsorbent . The each metal ion was saturately adsorbed on the fibrous adsorbent from the aqueous solution of the divalent transition metal acetate. The adsorbed metal ions were immobilized in crystal lattices as main components of various titanate minerals after the sintering treatment. The copper ions were immobilized into the mineral assemblage of rutile, and Cu2TiO3 and Cu3TiO4 phases having a complex crystal structure . Zinc ions were fixed into the mineral assemblage of rutile and a Zn2TiO4 phase of the inverse spinel structure. Each metal ion of manganese, cobalt and nickel was immobilized into the same mineral assemblage of rutile and a MTiO3 (M=Mn, Co, and Ni) phase of the ilmenite structure . Rutile in these immobilizers occurs as a matrix mineral in the largest amount. The leachability of each metal ion in the immobilizers was measured under normal atmospheric and hydrothermal conditions . The results of the former indicated to be very stable with high leach resistance of maximal 3.210-9 gcmd-1 of mangnese ion, and the results of the latter also indicated to be very stable with maximal 9.1109g• cm2d-1 of nickel ion. [Received September 13, 1984]","PeriodicalId":17274,"journal":{"name":"Journal of the Ceramic Association, Japan","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1985-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72635338","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1981-05-01DOI: 10.2109/JCERSJ1950.89.1029_277
J. Hojo, A. Kato
{"title":"Direct Observation of the Formation Process of TiN Particles by CVD Method","authors":"J. Hojo, A. Kato","doi":"10.2109/JCERSJ1950.89.1029_277","DOIUrl":"https://doi.org/10.2109/JCERSJ1950.89.1029_277","url":null,"abstract":"","PeriodicalId":17274,"journal":{"name":"Journal of the Ceramic Association, Japan","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1981-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73143578","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1979-01-01DOI: 10.2109/JCERSJ1950.87.1002_112
K. Kawakami, H. Yanagida
{"title":"Effects of water vapor on the electrical conductivity of the interface of semiconductor ceramic-ceramic contacts.","authors":"K. Kawakami, H. Yanagida","doi":"10.2109/JCERSJ1950.87.1002_112","DOIUrl":"https://doi.org/10.2109/JCERSJ1950.87.1002_112","url":null,"abstract":"","PeriodicalId":17274,"journal":{"name":"Journal of the Ceramic Association, Japan","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1979-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81897581","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1979-01-01DOI: 10.2109/JCERSJ1950.87.1010_541
Hidehiko Tanaka, Y. Inomata
Pure SiC powder cannot be densified by normal pressure sinteiring or by hot-pressi and some additives are needed to densify it The studies reported previously showed tha B or B compounds1),2), and Al or Al com pounds3) were the most effective additives. I is well known that B and C additives can sinter SiC powder under normal pressure and that B4C, BP and BN are also effectiv The author have been studying the sinte ing behaviors of SiC by an addition of Al compounds, such as AlB2, AlN and Al4C They have found that a small amount of AlB addition could sinter SiC powder by hot-pres ing. Recently, J. A. Coppola et al.4) reporte a sintering of SiC with AlB2 additive in their
纯SiC粉不能用常压烧结或热压致密化，需要添加一些添加剂来致密化。以前的研究表明，B或B化合物1)，2)和Al或Al化合物3)是最有效的添加剂。众所周知，B和C添加剂能在常压下烧结SiC粉末，B4C、BP和BN也能有效烧结SiC粉末。作者研究了添加AlB2、AlN和Al4C等Al化合物对SiC的烧结行为，发现添加少量AlB可以通过热压烧结SiC粉末。最近，J. a . Coppola等人(4)报道了一种用AlB2添加剂烧结SiC的方法
{"title":"Microstructure of hot-pressed SiC with AlB2 additive.","authors":"Hidehiko Tanaka, Y. Inomata","doi":"10.2109/JCERSJ1950.87.1010_541","DOIUrl":"https://doi.org/10.2109/JCERSJ1950.87.1010_541","url":null,"abstract":"Pure SiC powder cannot be densified by normal pressure sinteiring or by hot-pressi and some additives are needed to densify it The studies reported previously showed tha B or B compounds1),2), and Al or Al com pounds3) were the most effective additives. I is well known that B and C additives can sinter SiC powder under normal pressure and that B4C, BP and BN are also effectiv The author have been studying the sinte ing behaviors of SiC by an addition of Al compounds, such as AlB2, AlN and Al4C They have found that a small amount of AlB addition could sinter SiC powder by hot-pres ing. Recently, J. A. Coppola et al.4) reporte a sintering of SiC with AlB2 additive in their","PeriodicalId":17274,"journal":{"name":"Journal of the Ceramic Association, Japan","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1979-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82149920","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1978-11-01DOI: 10.2109/JCERSJ1950.86.999_526
護 三友, 信行 倉元, 正幸 堤, 弘茂 鈴木
(1) “Balanced” powder mixture of Si3N4, AlN and Al2O3 for sialon (Si6-zAlzOzN8-z with z=1, 2, 3 or 4) was hot pressed at 1750°C for 1h under 200kg/cm2. The densification was incomplete in a sialon with z=1. Other sialons were pore free.(2) The reactions included in the process of β-sialon formation were inferred to be, (a) the formation of 15 R-sialon, x-phase and β-sialon with z=2.3-2.5 at low temperature (equations (2) and (3)), (b) steep densification at higher temperature than 1600°C by “transient liquid phase sintering” with x-phase as a liquid, (c) the final step to approach z value of β-sialon into predicted one (equations (5) and (6)).(3) Density measurement and chemical etching with diluted HF+HNO3 of fracture surface of sialon revealed that there was unreacted materials in sialons with z=3 and 4. A single phase and fully dense sialon was obtained in the composition z=2 with very small amount of grain boundary phase, if any.(4) Small amount of excess oxide (about 3 wt%) in a sialon with z=2, which existed as grain boundary phase, was detected by chemical etching.
{"title":"Si-Al-O-Nセラミックス単相の合成","authors":"護 三友, 信行 倉元, 正幸 堤, 弘茂 鈴木","doi":"10.2109/JCERSJ1950.86.999_526","DOIUrl":"https://doi.org/10.2109/JCERSJ1950.86.999_526","url":null,"abstract":"(1) “Balanced” powder mixture of Si3N4, AlN and Al2O3 for sialon (Si6-zAlzOzN8-z with z=1, 2, 3 or 4) was hot pressed at 1750°C for 1h under 200kg/cm2. The densification was incomplete in a sialon with z=1. Other sialons were pore free.(2) The reactions included in the process of β-sialon formation were inferred to be, (a) the formation of 15 R-sialon, x-phase and β-sialon with z=2.3-2.5 at low temperature (equations (2) and (3)), (b) steep densification at higher temperature than 1600°C by “transient liquid phase sintering” with x-phase as a liquid, (c) the final step to approach z value of β-sialon into predicted one (equations (5) and (6)).(3) Density measurement and chemical etching with diluted HF+HNO3 of fracture surface of sialon revealed that there was unreacted materials in sialons with z=3 and 4. A single phase and fully dense sialon was obtained in the composition z=2 with very small amount of grain boundary phase, if any.(4) Small amount of excess oxide (about 3 wt%) in a sialon with z=2, which existed as grain boundary phase, was detected by chemical etching.","PeriodicalId":17274,"journal":{"name":"Journal of the Ceramic Association, Japan","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1978-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90921321","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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