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2020 International Symposium on Devices, Circuits and Systems (ISDCS)最新文献

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History Effect on Circuit Performance of SOI-MOSFETs 历史对soi - mosfet电路性能的影响
Pub Date : 2020-03-04 DOI: 10.1109/ISDCS49393.2020.9262980
Soumajit Ghosh, M. Miura-Mattausch, T. Iizuka, H. Kikuchihara, H. Rahaman, H. Mattausch
The history effect observed in SOI-MOSFET is investigated. Origin of the effect is the impact ionization, where induced carriers are accumulated within the SOI layer due the potential barrier at the source/channel junction. The compact model HiSIM_SOTB describing the effect based on its origin is studied to analyze the influence on circuit. An inverter-chain circuit is applied to characterize the influence of the history effect. It is demonstrated how the accumulated carriers propagates within the circuit as well as how the generated carriers are accumulated and disappeared during circuit operation. The charging/discharging of the carriers takes time until it reaches stable condition, which could be much longer than the normal circuit operation cycle, observed as the history effect.
研究了在SOI-MOSFET中观察到的历史效应。该效应的起源是冲击电离,其中由于源/通道交界处的势垒,诱导载流子在SOI层内积累。研究了基于源效应描述的压缩模型HiSIM_SOTB,分析了对电路的影响。采用反相链电路来表征历史效应的影响。演示了累积载流子如何在电路内传播,以及在电路运行期间产生的载流子如何累积和消失。载流子的充电/放电需要一定的时间,直到达到稳定状态,这可能比正常电路的工作周期长得多,这就是历史效应。
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引用次数: 1
Force-Sensor-Based Walking-Environment Recognition of Biped Robots 基于力传感器的双足机器人行走环境识别
Pub Date : 2020-03-04 DOI: 10.1109/ISDCS49393.2020.9263005
H. Mattausch, A. Luo, S. Dutta, T. Maiti, M. Miura-Mattausch
Usability of biped robots in real applications depends on the robot capability of stable and robust walking with high efficiency. To cope with the various practical challenges, the robot must therefore be able to recognize its environment properties. We report a system for indoor-surface detection based on force sensors attached below the feet of the robot. To verify the recognition performance, indoor evaluation surfaces with 5 different properties are used. The capability of fast surface-property recognition is realized by processing the stream of force-sensor data according to the method of overlapping sliding windows, in order to generate 4 different features in a dynamic way. A k-nearest-neighbor (kNN) classifier with multiple classes is applied for real-time high- accuracy recognition of the surface-specific robot-walking characteristics. In particular, recognition performance can be increased by combining the studied features into a single feature descriptor, instead of using each feature separately. Achievability of an overall accuracy of 90.4% and an average precision of 91.49% is verified. Thus, a favorable trade-off between cost and performance is realized. The developed method is useful for optimized dynamic robot-body balancing and walking-speed adjustment, according to the recognized surface properties.
双足机器人在实际应用中的可用性取决于机器人稳定、鲁棒、高效的行走能力。因此,为了应对各种实际挑战,机器人必须能够识别其环境属性。我们报告了一个基于附着在机器人脚下的力传感器的室内表面检测系统。为了验证识别性能,使用了具有5种不同属性的室内评估面。采用滑动窗口重叠的方法对力传感器数据流进行处理,动态生成4种不同的特征,实现了快速的表面特征识别能力。采用多类k-最近邻分类器对机器人行走特征进行实时高精度识别。特别是,通过将所研究的特征组合到单个特征描述符中,而不是单独使用每个特征,可以提高识别性能。验证了该方法的总体精度为90.4%,平均精度为91.49%。因此,在成本和性能之间实现了有利的权衡。该方法可根据识别出的表面特性,优化机器人动态体平衡和行走速度调整。
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引用次数: 1
Heat Mitigation in 3D ICs by Improvised TTSV Structure 基于简易TTSV结构的3D集成电路散热研究
Pub Date : 2020-03-04 DOI: 10.1109/ISDCS49393.2020.9262977
Debika Chaudhuri, Dalia Nandi Das, H. Rahaman, Tamal Ghosh
To get rid of the diverse factors and limitations originated in the conventional planer integration design, 3-dimensional (3D) integration seems to be one of the best replacing signatures in current era. But, thermal issues are the major constraint for the wide spread application, further growth and advancement to these highly budding integration techniques. To reduce the generated heat within the 3D IC cooling through the thermal through silicon via (TTSV) is one of the best possible recognized techniques. This paper is intended to provide some realistic regulation to the design of TTSV for effective management thermal heat mitigation. The temperature dependent results for the hotspot alignment issues are also discussed and compared for different TTSV outer materials along with the utilization of time dependent temperature fluctuation generated within the 3D IC active layers.
为了摆脱传统平面集成设计的各种因素和局限性,三维集成似乎是当今时代替代签名的最佳方法之一。但是,热问题是制约这些新兴集成技术广泛应用、进一步发展和进步的主要因素。通过热透硅通孔(TTSV)冷却来减少3D集成电路内产生的热量是公认的最佳技术之一。本文旨在为TTSV的设计提供一些现实的规范,以便有效地管理热减排。本文还讨论了热点对准问题的温度相关结果,并对不同TTSV外层材料的热点对准问题进行了比较,同时利用了三维集成电路有源层内产生的时间相关温度波动。
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引用次数: 1
Investigation of density and alignment of ZnO-nanowires grown by double-step chemical bath deposition (CBD/CBD) technique on metallic, insulating and semiconducting substrates 双步化学浴沉积(CBD/CBD)技术在金属、绝缘和半导体基底上生长zno纳米线的密度和取向研究
Pub Date : 2020-03-04 DOI: 10.1109/ISDCS49393.2020.9262979
S. Bhattacharya, R. Saha, Subhrajit Sikdar, S. Mandal, Chirantan Das, S. Chattopadhyay
In this paper, the impact of various metallic, insulating and semiconducting substrates on the growth of ZnO nanowires is investigated. The nanowire density and its alignment are studied for all of the substrates and it is observed that the substrate with relatively lower lattice mismatch shows higher degree of nanowire density and alignment. The formation of such nanowires is confirmed by performing EDS, XRD and UV-Vis spectrophotometry experiments. The current work may be useful for mass production of highly ordered ZnO-nanowires for numerous applications.
本文研究了不同金属衬底、绝缘衬底和半导体衬底对ZnO纳米线生长的影响。研究了所有衬底的纳米线密度及其排列,发现晶格失配程度相对较低的衬底具有较高的纳米线密度和排列程度。通过EDS、XRD、UV-Vis等实验证实了纳米线的形成。目前的工作可能有助于大量生产高有序的zno纳米线,用于许多应用。
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引用次数: 0
Investigation of HfSiOX Passivation Effect on AlGaN/GaN HEMT HfSiOX对AlGaN/GaN HEMT钝化效果的研究
Pub Date : 2020-03-04 DOI: 10.1109/ISDCS49393.2020.9262998
S. Mazumder, Yeong-Her Wang
AlGaN/GaN-based high electron mobility Transistors (HEMTs) were fabricated on Si substrate. Surface passivation effect on AlGaN/GaN HEMTs was investigated with hafnium silicate (HfSiOx) passivation layer deposited by atomic layer deposition (ALD) at 250 °C. The DC current-voltage characteristics (ID-VD), pulsed ID-VD characteristics, and transfer characteristics of the device were compared before and after passivation. The enhancement of IDMAX and GMMAX with better gate controllability as well as significant reduction of current degradation phenomenon due to the suppression of surface states, was observed in the passivated (HfSiOX) HEMT compared to unpassivated device
在Si衬底上制备了AlGaN/ gan基高电子迁移率晶体管(HEMTs)。采用原子层沉积法(ALD)在250℃下沉积硅酸铪(HfSiOx)钝化层,研究了AlGaN/GaN HEMTs的表面钝化效果。对比钝化前后器件的直流电流-电压特性(ID-VD)、脉冲ID-VD特性和传输特性。与未钝化的HEMT相比,钝化(HfSiOX) HEMT的IDMAX和GMMAX得到了增强,具有更好的栅极可控性,并且由于抑制了表面状态而显著减少了电流退化现象
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引用次数: 3
Image Classification Based on Approximate Wavelet Transform and Transfer Learning on Deep Convolutional Neural Networks 基于近似小波变换和深度卷积神经网络迁移学习的图像分类
Pub Date : 2020-03-04 DOI: 10.1109/ISDCS49393.2020.9263001
Moumita Acharya, Soumyajit Poddar, A. Chakrabarti, H. Rahaman
In this paper a novel method has been proposed based on a combination of approximate computing, Discrete Wavelet Transform and deep neural network for image classification. In the recent trends, image classification using deep learning network comes under the limelight of the world of artificial intelligence. In the paper we have applied the approximation through bit width reduction technique through discrete wavelet transform technique for the processing of the input database. For feature extraction and classification we have developed a deep convolution neural network that is trained with that preprocesses data. The results show that the proposed model reduces the elapsed time and achieve a good rate of accuracy as compare to the Alexnet and Resnet-50 CNN models.
本文提出了一种基于近似计算、离散小波变换和深度神经网络相结合的图像分类方法。在最近的趋势中,利用深度学习网络进行图像分类受到了人工智能领域的关注。本文通过离散小波变换技术对输入数据库进行处理,并应用位宽缩减技术进行逼近。对于特征提取和分类,我们已经开发了一个深度卷积神经网络,它是用预处理数据训练的。结果表明,与Alexnet和Resnet-50 CNN模型相比,所提出的模型减少了经过的时间,并取得了良好的准确率。
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引用次数: 2
Microfluidic Cyberphysical Diagnostic System: An ANN Based Application 微流控网络物理诊断系统:基于神经网络的应用
Pub Date : 2020-03-04 DOI: 10.1109/ISDCS49393.2020.9263010
P. Roy, Amiya Sahoo, Mriganka Chakrabarty, H. Rahaman
The present day advances in Microfluidic and Microfabrication technology resulted in the emergence of a new generation of lab-on-chip (LOC) devices namely digital microfluidic biochips. Such devices find wide application in the area of medical diagnostics, forensics, sequencing of DNA, design of drugs, monitoring of environment and so on. Automated optical detection and analysis plays significant role in interpretation and decision making in medical diagnostics using lab-on-chip based applications. This paper proposes a cyber physical system based on artificial neural networks to perform a sequential multilevel detection for enhanced medical detection and diagnostics for accurate treatment procedure. The Biochip based detection and diagnosis is simulated in an FPGA platform. The simulation results are found to be closely accurate with conventional techniques and highly encouraging.
当今微流控和微加工技术的进步导致了新一代芯片实验室(LOC)设备的出现,即数字微流控生物芯片。这些设备在医学诊断、法医学、DNA测序、药物设计、环境监测等领域都有广泛的应用。自动光学检测和分析在医学诊断的解释和决策中发挥着重要作用。本文提出了一种基于人工神经网络的网络物理系统,用于执行顺序多级检测,以增强医疗检测和诊断,从而实现准确的治疗程序。在FPGA平台上对基于生物芯片的检测诊断进行了仿真。仿真结果与常规方法接近,具有较高的启发性。
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引用次数: 0
An Improved Online Testing Technique For Reversible Circuits 一种改进的可逆电路在线测试技术
Pub Date : 2020-03-04 DOI: 10.1109/ISDCS49393.2020.9262971
Joyati Mondal, D. K. Das
The emerging technology of reversible circuits offers a potential solution to the synthesis of ultra low-power quantum computing systems. A reversible circuit can be envisaged as a cascade of reversible gates only, such as Toffoli gate, which has two components: k control bits and a target bit (k-CNOT), k ≥1. While analyzing testability issues in a reversible circuit, the missing-gate fault model is often used for modeling physical defects in k-CNOT gates. In this paper, we propose online design-for-testability (DFT) technique. The proposed method is an improved version of an earlier work by Kole et. al. Our method yields less overhead in terms of quantum cost as compared to the original approach. The method is advantageous for circuits where consecutive gates occur frequently with the same set of controls.
可逆电路的新兴技术为超低功耗量子计算系统的合成提供了一个潜在的解决方案。可逆电路可以设想为可逆门的级联,例如Toffoli门,它有两个组成部分:k个控制位和一个目标位(k- cnot), k≥1。在分析可逆电路的可测试性问题时,经常使用缺门故障模型来模拟k-CNOT门的物理缺陷。本文提出了在线可测试性设计(DFT)技术。提出的方法是Kole等人早期工作的改进版本。与原始方法相比,我们的方法在量子成本方面产生更少的开销。该方法是有利的电路,连续门发生频繁与同一组控制。
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引用次数: 0
Classification of ECG Signals for IoT-based Smart Healthcare Applications using WBAN 基于物联网的WBAN智能医疗应用的心电信号分类
Pub Date : 2020-03-04 DOI: 10.1109/ISDCS49393.2020.9263011
Arka Roy, S. Chatterjee, Prasenjit Maji, H. Mondal
From the last few decades, the diagnoses of diseases are based on a medical test. Electrocardiogram (ECG) signal is one of the techniques used for diagnosing heart diseases. The Electrocardiograph or ECG machine allows removing many electrical and mechanical defects of the heart by measuring ECG’s which have some potential on the body surface. With the help of it, doctors are able to determine heart rate and other cardiac parameters. Early and accurate detection of arrhythmia types is important in detecting heart diseases and finding treatment for a patient. This paper deals with the analysis of the signal for the classification of critical and non-critical data using different learning-based algorithms for smart Internet of Things (IoT) based health-care monitoring application using Wireless Body Area Network (WBAN) and how to minimize the misclassified critical data.
从过去的几十年,疾病的诊断是基于医学测试。心电图信号是诊断心脏疾病的技术之一。心电图仪或心电图机可以通过测量体表上有电位的心电图来消除心脏的许多电气和机械缺陷。在它的帮助下,医生能够确定心率和其他心脏参数。早期和准确地检测心律失常类型对于发现心脏病和找到治疗方法非常重要。针对基于无线体域网络(WBAN)的基于智能物联网(IoT)的医疗监测应用,研究了使用不同的学习算法对关键数据和非关键数据进行分类的信号分析,以及如何最大限度地减少关键数据的错误分类。
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引用次数: 1
Impact of AlGaN Doping Concentration on the Analog/RF Performance of a Double Gate Underlap n-AlGaN/GaN MOSHEMT AlGaN掺杂浓度对双栅下搭接n-AlGaN/GaN MOSHEMT模拟/射频性能的影响
Pub Date : 2020-03-04 DOI: 10.1109/ISDCS49393.2020.9263012
Rajrup Mitra, Akash Roy, A. Kundu, M. Kar
With a well calibrated TCAD Simulator, this paper characterizes a novel n-AlGaN/GaN Metal Oxide Semiconductor High Electron Mobility Transistor (MOSHEMT) with a double gate symmetric underlapped structure. Detailed Analog, Power Gain and RF Parameters have been studied by varying the AlGaN doping concentration from undoped to 5x1018/cm3. These enhanced hetero-structures display superior performance in high frequency and low power applications compared to conventional HEMT and MOSFET devices.
本文利用校准良好的TCAD模拟器,表征了一种具有双栅极对称叠接结构的新型n-AlGaN/GaN金属氧化物半导体高电子迁移率晶体管(MOSHEMT)。通过改变AlGaN掺杂浓度从未掺杂到5x1018/cm3,详细研究了模拟、功率增益和射频参数。与传统的HEMT和MOSFET器件相比,这些增强型异质结构在高频和低功耗应用中表现出优越的性能。
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引用次数: 0
期刊
2020 International Symposium on Devices, Circuits and Systems (ISDCS)
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