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Applications of the Charge-Control Theory 电荷控制理论的应用
Pub Date : 1962-06-01 DOI: 10.1109/IRETELC.1962.5407923
J. A. Ekiss
The consideration of the transistor as a charge-controlled device as proposed by Beaufoy and Sparkes has proved to be a useful way, both conceptually and analytically, to view the transistor. In this paper the charge-control theory is applied to a number of problems of interest to switching circuit designers. The charge-control theory is briefly reviewed to provide a foundation for the problems considered. The theory is then applied to describe in detail the ``on-demand current gain'' s s and its effect on circuit design. The basic equations developed for switching times are applied to an RCTL circuit and equations for rise, storage and fall times are developed. The effect of stray capacitance on switching times is developed in a particularly simple and unique way.
博福伊和斯帕克斯提出的将晶体管视为电荷控制器件的观点,在概念上和分析上都被证明是一种有用的方法。本文将电荷控制理论应用于开关电路设计人员感兴趣的一些问题。简要回顾了电荷控制理论,为所考虑的问题提供了基础。然后应用该理论详细描述了“按需电流增益”及其对电路设计的影响。将所建立的开关时间的基本方程应用于RCTL电路,并建立了上升、存储和下降时间的方程。以一种特别简单和独特的方式研究了杂散电容对开关时间的影响。
{"title":"Applications of the Charge-Control Theory","authors":"J. A. Ekiss","doi":"10.1109/IRETELC.1962.5407923","DOIUrl":"https://doi.org/10.1109/IRETELC.1962.5407923","url":null,"abstract":"The consideration of the transistor as a charge-controlled device as proposed by Beaufoy and Sparkes has proved to be a useful way, both conceptually and analytically, to view the transistor. In this paper the charge-control theory is applied to a number of problems of interest to switching circuit designers. The charge-control theory is briefly reviewed to provide a foundation for the problems considered. The theory is then applied to describe in detail the ``on-demand current gain'' s s and its effect on circuit design. The basic equations developed for switching times are applied to an RCTL circuit and equations for rise, storage and fall times are developed. The effect of stray capacitance on switching times is developed in a particularly simple and unique way.","PeriodicalId":177496,"journal":{"name":"IRE Trans. Electron. Comput.","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1962-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123762608","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
The Vertex-Frame Method for Obtaining Minimal Proposition-Letter Formulas 求最小命题字母公式的顶点-框架法
Pub Date : 1962-04-01 DOI: 10.1109/TEC.1962.5219347
Theodore M. Booth
The vertex frame is similar to an n-dimensional cube or Tychonoff frame that has been cut and unfolded into the shape of a Karnaugh map. The methods of use are similar to those for Karnaugh maps. Minimal disjunctive and conjunctive normal formulas are found for problems with or without don't-care cases. The selection graph, a linear graph, is used to enhance the prime antecedent (= prime implicant) selection procedure. The vertex frame readily handles most problems of up to six variables. Problems with seven and eight variables have been worked successfully, but this is an area where more experience is needed in working out actual problems that arise in engineering practice. As with any map method, pattern recognition plays an important role, and thus it takes longer to become proficient in this method than in some of the formula-manipulation methods (e.g., Quine's, McCluskey's, Mott's). The problem of recognizing plots, on a vertex frame, of symmetric and unate truth functions is discussed.
顶点框架类似于n维立方体或Tychonoff框架,被切割并展开成卡诺图的形状。使用方法与卡诺地图类似。找到了最小析取和合取正规公式,用于有或没有无关情况的问题。选择图是一个线性图,用来增强素数前因式(=素数隐含式)的选择过程。顶点框架很容易处理最多六个变量的大多数问题。7和8个变量的问题已经成功地解决了,但这是一个需要更多经验来解决工程实践中出现的实际问题的领域。与任何地图方法一样,模式识别扮演着重要的角色,因此,与一些公式操作方法(例如,Quine's, McCluskey's, Mott's)相比,精通这种方法需要更长的时间。讨论了对称真值函数和单真值函数在顶点框架上的图的识别问题。
{"title":"The Vertex-Frame Method for Obtaining Minimal Proposition-Letter Formulas","authors":"Theodore M. Booth","doi":"10.1109/TEC.1962.5219347","DOIUrl":"https://doi.org/10.1109/TEC.1962.5219347","url":null,"abstract":"The vertex frame is similar to an n-dimensional cube or Tychonoff frame that has been cut and unfolded into the shape of a Karnaugh map. The methods of use are similar to those for Karnaugh maps. Minimal disjunctive and conjunctive normal formulas are found for problems with or without don't-care cases. The selection graph, a linear graph, is used to enhance the prime antecedent (= prime implicant) selection procedure. The vertex frame readily handles most problems of up to six variables. Problems with seven and eight variables have been worked successfully, but this is an area where more experience is needed in working out actual problems that arise in engineering practice. As with any map method, pattern recognition plays an important role, and thus it takes longer to become proficient in this method than in some of the formula-manipulation methods (e.g., Quine's, McCluskey's, Mott's). The problem of recognizing plots, on a vertex frame, of symmetric and unate truth functions is discussed.","PeriodicalId":177496,"journal":{"name":"IRE Trans. Electron. Comput.","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1962-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125582460","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Correction to "Minimization of Switching Circuits Subject to Reliability Conditions" 对“受可靠性条件约束的开关电路最小化”的修正
Pub Date : 1962-04-01 DOI: 10.1109/TEC.1962.5219367
E. Lawler
{"title":"Correction to \"Minimization of Switching Circuits Subject to Reliability Conditions\"","authors":"E. Lawler","doi":"10.1109/TEC.1962.5219367","DOIUrl":"https://doi.org/10.1109/TEC.1962.5219367","url":null,"abstract":"","PeriodicalId":177496,"journal":{"name":"IRE Trans. Electron. Comput.","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1962-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128629864","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
On the Number of Types of Self-Dual Logical Functions 论自对偶逻辑函数的类型数
Pub Date : 1962-04-01 DOI: 10.1109/TEC.1962.5219361
I. Toda
{"title":"On the Number of Types of Self-Dual Logical Functions","authors":"I. Toda","doi":"10.1109/TEC.1962.5219361","DOIUrl":"https://doi.org/10.1109/TEC.1962.5219361","url":null,"abstract":"","PeriodicalId":177496,"journal":{"name":"IRE Trans. Electron. Comput.","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1962-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124498730","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Time Average Thermal Properties of a Computer Utilizing Thin-Film Superconducting Elements 利用薄膜超导元件的计算机时间平均热性能
Pub Date : 1962-04-01 DOI: 10.1109/TEC.1962.5219353
H. Sobol
It is necessary to understand the static thermal properties of cryotron gates before one can predict the limitations associated with dissipative heating of a complex cryotronic computer. An experimental program has been conducted to determine the thermal properties of isolated and of thermally coupled gates. All experiments reported in this paper were performed on tin gates evaporated onto glass substrates. The total thermal conductance K of a gate is defined, and experimental values of K are presented as a function of power and gate geometry. An analysis of the heat flow is given, based on a temperature-dependent coefficient of heat transfer. Theoretical values of K and temperature distribution are derived. The theory qualitatively predicts the temperature variation. Finally, the results are extrapolated to estimate the number of cryotrons that can be used safely in a thermally coupled system.
在预测复杂的低温电子计算机耗散加热的局限性之前,有必要了解低温电子门的静态热特性。进行了一个实验程序来确定隔离门和热耦合门的热性能。本文报道的所有实验都是在蒸发到玻璃基板上的锡栅上进行的。定义了栅极的总热导K,并将K的实验值表示为功率和栅极几何形状的函数。基于温度相关的传热系数,对热流进行了分析。导出了K的理论值和温度分布。该理论定性地预测了温度的变化。最后,对结果进行了外推,以估计在热耦合系统中可以安全使用的低温控管的数量。
{"title":"Time Average Thermal Properties of a Computer Utilizing Thin-Film Superconducting Elements","authors":"H. Sobol","doi":"10.1109/TEC.1962.5219353","DOIUrl":"https://doi.org/10.1109/TEC.1962.5219353","url":null,"abstract":"It is necessary to understand the static thermal properties of cryotron gates before one can predict the limitations associated with dissipative heating of a complex cryotronic computer. An experimental program has been conducted to determine the thermal properties of isolated and of thermally coupled gates. All experiments reported in this paper were performed on tin gates evaporated onto glass substrates. The total thermal conductance K of a gate is defined, and experimental values of K are presented as a function of power and gate geometry. An analysis of the heat flow is given, based on a temperature-dependent coefficient of heat transfer. Theoretical values of K and temperature distribution are derived. The theory qualitatively predicts the temperature variation. Finally, the results are extrapolated to estimate the number of cryotrons that can be used safely in a thermally coupled system.","PeriodicalId":177496,"journal":{"name":"IRE Trans. Electron. Comput.","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1962-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123504762","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A Computer for Solving Linear Simultaneous Equations Using the Residue Number System 用余数系统求解线性联立方程组的计算机
Pub Date : 1962-04-01 DOI: 10.1109/TEC.1962.5219349
Ronald M. Guffin
The design of a special-purpose digital computer for solving simultaneous equations which operates with numbers coded in the residue number system is described. Since addition, subtraction or multiplication can be done in one-bit time using this coding, Gauss-Seidel iteration can be done in a very fast and efficient manner. The computer has been arbitrarily designed to solve dense systems of equations with as many as 128 unknowns and sparse systems with as many as 512 unknowns. Operating at a 500-kc clock rate, the computer would be able to perform one complete iteration on a system with 128 unknowns 30 times faster than an IBM 704. Using a 7 digit residue code requiring a 42-bit word, the computer would provide solutions of up to 4 significant figures. By using the best presently obtainable components, computing speed can be increased by a factor of 5. The size of the system which can be handled and the number of significant digits which can be obtained in the solutions can also be extended if desired. The speed of computation obtained with this computer is made possible by the combination of the one-bit-time arithmetic operations obtainable with residue numbers, the high data rate possible with a magnetic drum, and the sequential nature of the Gauss-Seidel iteration procedure. The digital techniques which have been developed to realize a computer of this type include methods of encoding decimal numbers into residue representation, rescaling residue numbers, and decoding residue numbers into binary coded decimal form.
介绍了一种用于求解用余数系统编码的联立方程组的专用数字计算机的设计。由于使用这种编码可以在一比特时间内完成加法,减法或乘法,因此高斯-赛德尔迭代可以以非常快速和有效的方式完成。这台计算机被任意设计成可以求解包含多达128个未知数的密集方程组和包含多达512个未知数的稀疏方程组。在500kc的时钟速率下运行,计算机将能够在一个有128个未知数的系统上执行一次完整的迭代,比IBM 704快30倍。使用需要42位字的7位剩余码,计算机将提供最多4位有效数字的解决方案。通过使用目前可获得的最好的组件,计算速度可以提高5倍。如果需要,还可以扩展可以处理的系统的大小和可以在解中获得的有效数字的数量。用这台计算机获得的计算速度是通过结合剩余数可获得的一比特时间算术运算,磁鼓可能实现的高数据速率以及高斯-塞德尔迭代过程的顺序特性而成为可能的。为实现这种类型的计算机而开发的数字技术包括将十进制数编码为剩余表示法、重新缩放剩余数以及将剩余数解码为二进制编码的十进制形式的方法。
{"title":"A Computer for Solving Linear Simultaneous Equations Using the Residue Number System","authors":"Ronald M. Guffin","doi":"10.1109/TEC.1962.5219349","DOIUrl":"https://doi.org/10.1109/TEC.1962.5219349","url":null,"abstract":"The design of a special-purpose digital computer for solving simultaneous equations which operates with numbers coded in the residue number system is described. Since addition, subtraction or multiplication can be done in one-bit time using this coding, Gauss-Seidel iteration can be done in a very fast and efficient manner. The computer has been arbitrarily designed to solve dense systems of equations with as many as 128 unknowns and sparse systems with as many as 512 unknowns. Operating at a 500-kc clock rate, the computer would be able to perform one complete iteration on a system with 128 unknowns 30 times faster than an IBM 704. Using a 7 digit residue code requiring a 42-bit word, the computer would provide solutions of up to 4 significant figures. By using the best presently obtainable components, computing speed can be increased by a factor of 5. The size of the system which can be handled and the number of significant digits which can be obtained in the solutions can also be extended if desired. The speed of computation obtained with this computer is made possible by the combination of the one-bit-time arithmetic operations obtainable with residue numbers, the high data rate possible with a magnetic drum, and the sequential nature of the Gauss-Seidel iteration procedure. The digital techniques which have been developed to realize a computer of this type include methods of encoding decimal numbers into residue representation, rescaling residue numbers, and decoding residue numbers into binary coded decimal form.","PeriodicalId":177496,"journal":{"name":"IRE Trans. Electron. Comput.","volume":"06 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1962-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117010305","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
Tunnel-Diode Full Binary Adder 隧道二极管全二进制加法器
Pub Date : 1962-04-01 DOI: 10.1109/TEC.1962.5219354
C. Renton, B. Rabinovici
A full binary adder utilizing a single tunnel diode and three resistors as its basic components is described, the circuit design criteria is outlined and values for a typical case are computed. The operating rate of the adder was determined analytically to be approximately 3 nsec. Experimental results obtained with a practical circuit that employed a 1N2939 tunnel diode were in good agreement with the analytical findings. The Sum and Carry outputs were 130 mv and 300 mv, respectively. These outputs need to be amplified if used to drive identical stages since there is no gain in this circuit. Since a full binary adder is a multipurpose logic element, a simple, compact, full binary adder that contains few components presents attractive possibilities for new computer logical schemes. This adder offers circuit simplicity and stability and is particularly suitable for application where low-power dissipation and compactness are desired.
本文描述了一种利用一个隧道二极管和三个电阻作为其基本元件的全二进制加法器,概述了电路设计准则,并计算了典型情况下的值。经分析确定加法器的工作速率约为3秒。采用1N2939隧道二极管的实际电路的实验结果与分析结果很好地吻合。Sum和Carry输出分别为130 mv和300 mv。这些输出需要被放大,如果用于驱动相同的阶段,因为在这个电路中没有增益。由于全二进制加法器是一种多用途的逻辑元件,一个简单、紧凑、包含很少组件的全二进制加法器为新的计算机逻辑方案提供了诱人的可能性。该加法器电路简单、稳定,特别适用于要求低功耗和紧凑的应用场合。
{"title":"Tunnel-Diode Full Binary Adder","authors":"C. Renton, B. Rabinovici","doi":"10.1109/TEC.1962.5219354","DOIUrl":"https://doi.org/10.1109/TEC.1962.5219354","url":null,"abstract":"A full binary adder utilizing a single tunnel diode and three resistors as its basic components is described, the circuit design criteria is outlined and values for a typical case are computed. The operating rate of the adder was determined analytically to be approximately 3 nsec. Experimental results obtained with a practical circuit that employed a 1N2939 tunnel diode were in good agreement with the analytical findings. The Sum and Carry outputs were 130 mv and 300 mv, respectively. These outputs need to be amplified if used to drive identical stages since there is no gain in this circuit. Since a full binary adder is a multipurpose logic element, a simple, compact, full binary adder that contains few components presents attractive possibilities for new computer logical schemes. This adder offers circuit simplicity and stability and is particularly suitable for application where low-power dissipation and compactness are desired.","PeriodicalId":177496,"journal":{"name":"IRE Trans. Electron. Comput.","volume":"114 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1962-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117252968","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
One-Level Storage System 一级存储系统
Pub Date : 1962-04-01 DOI: 10.1109/TEC.1962.5219356
T. Kilburn, D. Edwards, M. Lanigan, F. Sumner
After a brief survey of the basic Atlas machine, the paper describes an automatic system which in principle can be applied to any combination of two storage systems so that the combination can be regarded by the machine user as a single level. The actual system described relates to a fast core store-drum combination. The effect of the system on instruction times is illustrated, and the tape transfer system is also introduced since it fits basically in through the same hardware. The scheme incorporates a ``learning'' program, a technique which can be of greater importance in future computers.
在简要介绍了基本的阿特拉斯机器之后,本文描述了一个原则上可以应用于两个存储系统的任意组合的自动系统,使该组合可以被机器用户视为一个单一的层次。所描述的实际系统涉及快速磁芯存储-鼓组合。说明了系统对指令时间的影响,并介绍了磁带传输系统,因为它基本上是通过相同的硬件安装的。该方案包含了一个“学习”程序,这种技术在未来的计算机中可能更重要。
{"title":"One-Level Storage System","authors":"T. Kilburn, D. Edwards, M. Lanigan, F. Sumner","doi":"10.1109/TEC.1962.5219356","DOIUrl":"https://doi.org/10.1109/TEC.1962.5219356","url":null,"abstract":"After a brief survey of the basic Atlas machine, the paper describes an automatic system which in principle can be applied to any combination of two storage systems so that the combination can be regarded by the machine user as a single level. The actual system described relates to a fast core store-drum combination. The effect of the system on instruction times is illustrated, and the tape transfer system is also introduced since it fits basically in through the same hardware. The scheme incorporates a ``learning'' program, a technique which can be of greater importance in future computers.","PeriodicalId":177496,"journal":{"name":"IRE Trans. Electron. Comput.","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1962-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134120687","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 297
Threshold Realization of Arithmetic Circuits 算术电路的阈值实现
Pub Date : 1962-04-01 DOI: 10.1109/TEC.1962.5219366
M. Fischler, E. Poe
uout t What is the effect if R is not made and maintained exactly equal to Ri? If R is larger a in L-COMPARATOR U out ItCES TO than Ri then the circuit exhibits customary LL| UH UI H e+9x>C_~ 4°/ > transition occurs for uip>uo, and alternately au s iY~08 w . the UH->UL transition for ui,,uo [Fig. 6(c)]. Since the ideal Fig. 1-Ideal comparator characteristic. condition [Fig. 6(b)] is embraced by these Fig. 5-Composite characteristic (simplified) of a tunneltwo cases, it can be attained exactly in princidiode pair whose diodes have electrical characteristics ple. In practice, a minute amount of hysteresis similar to those shown in Fig. 3. is, of course, inevitable. ;R For high-speed operation, freedom from hysteresis will depend on diode junction ca-
如果R不完全等于Ri,会有什么影响?如果L-COMPARATOR U out ItCES TO中的R比Ri大,则电路表现出惯常的LL / uu / uu +9x>C_~ 4°/ >跃迁,在upp > 0时发生跃迁,在y ~ 8w时交替发生跃迁。ui,,uo的UH->UL转换[图6(c)]。自理想图1-理想比较器特性。条件[图6(b)]包含在这些图5中。隧道的复合特性(简化)在两种情况下,可以精确地获得二极管具有电特性ple的原理二极管对。在实际应用中,与图3所示类似的微小迟滞量。当然,这是不可避免的。R对于高速运行,不受迟滞影响取决于二极管结ca
{"title":"Threshold Realization of Arithmetic Circuits","authors":"M. Fischler, E. Poe","doi":"10.1109/TEC.1962.5219366","DOIUrl":"https://doi.org/10.1109/TEC.1962.5219366","url":null,"abstract":"uout t What is the effect if R is not made and maintained exactly equal to Ri? If R is larger a in L-COMPARATOR U out ItCES TO than Ri then the circuit exhibits customary LL| UH <E HIGH STATE H f.& 4 hysteresis [Fig. 6(a) ]. In this case, the UL-*>UI H e+9x>C_~ 4°/ > transition occurs for uip>uo, and alternately au s iY~08 w . the UH->UL transition for ui,,<uo. Conversely, '0v SWITCHES TO uf R is smaller than Ri, the situation is reversed LOW STATEu U L (S~'+ u) -u'~+ u2) so that UL--5U1 takes place for uiX<uo and --UL (uc' +ut) <.//(u'^+u2) -*UL for uii>uo [Fig. 6(c)]. Since the ideal Fig. 1-Ideal comparator characteristic. condition [Fig. 6(b)] is embraced by these Fig. 5-Composite characteristic (simplified) of a tunneltwo cases, it can be attained exactly in princidiode pair whose diodes have electrical characteristics ple. In practice, a minute amount of hysteresis similar to those shown in Fig. 3. is, of course, inevitable. ;R For high-speed operation, freedom from hysteresis will depend on diode junction ca-","PeriodicalId":177496,"journal":{"name":"IRE Trans. Electron. Comput.","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1962-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115210712","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Hysteresis-Free Tunnel-Diode Amplitude Comparator 无迟滞隧道二极管幅度比较器
Pub Date : 1962-04-01 DOI: 10.1109/TEC.1962.5219365
R. Kaenel
{"title":"Hysteresis-Free Tunnel-Diode Amplitude Comparator","authors":"R. Kaenel","doi":"10.1109/TEC.1962.5219365","DOIUrl":"https://doi.org/10.1109/TEC.1962.5219365","url":null,"abstract":"","PeriodicalId":177496,"journal":{"name":"IRE Trans. Electron. Comput.","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1962-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123792493","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
期刊
IRE Trans. Electron. Comput.
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