Pub Date : 2015-03-23DOI: 10.1109/ICMTS.2015.7106095
Tsuyoshi Suzuki, A. Anchlia, V. Cherman, H. Oishi, S. Mori, J. Ryckaert, K. Ogawa, G. van der Plas, E. Beyne, Y. Fukuzaki, D. Verkest, H. Ohnuma
We have successfully developed the new design of MOSFET array structure with high accuracy measurement both for Ion excluding IR drop and Ioff without contamination. We propose measurement algorithm “feedback looped biasing” with kelvin probe structure and canceling method for leakage contamination due to array peripherals. This test structure is implemented in scribe line for 28nm technology and beyond. And we get layout dependency of MOSFET characteristics and mismatch characteristics.
{"title":"A novel structure of MOSFET array to measure ioff-ion with high accuracy and high density","authors":"Tsuyoshi Suzuki, A. Anchlia, V. Cherman, H. Oishi, S. Mori, J. Ryckaert, K. Ogawa, G. van der Plas, E. Beyne, Y. Fukuzaki, D. Verkest, H. Ohnuma","doi":"10.1109/ICMTS.2015.7106095","DOIUrl":"https://doi.org/10.1109/ICMTS.2015.7106095","url":null,"abstract":"We have successfully developed the new design of MOSFET array structure with high accuracy measurement both for Ion excluding IR drop and Ioff without contamination. We propose measurement algorithm “feedback looped biasing” with kelvin probe structure and canceling method for leakage contamination due to array peripherals. This test structure is implemented in scribe line for 28nm technology and beyond. And we get layout dependency of MOSFET characteristics and mismatch characteristics.","PeriodicalId":177627,"journal":{"name":"Proceedings of the 2015 International Conference on Microelectronic Test Structures","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-03-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127191032","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-03-23DOI: 10.1109/ICMTS.2015.7106111
M. Buehler
The cleanliness of glass beads was assessed using a test structure and low-frequency dielectric spectroscopy operating between 10 mHz and 100 kHz. Glass beads were exposed to moisture between 40 and 85% RH. Results indicate that capillary and film water can be used to indicate the state of cleanliness.
{"title":"A test structure for characterizing the cleanliness of glass beads using low-frequency dielectric spectroscopy","authors":"M. Buehler","doi":"10.1109/ICMTS.2015.7106111","DOIUrl":"https://doi.org/10.1109/ICMTS.2015.7106111","url":null,"abstract":"The cleanliness of glass beads was assessed using a test structure and low-frequency dielectric spectroscopy operating between 10 mHz and 100 kHz. Glass beads were exposed to moisture between 40 and 85% RH. Results indicate that capillary and film water can be used to indicate the state of cleanliness.","PeriodicalId":177627,"journal":{"name":"Proceedings of the 2015 International Conference on Microelectronic Test Structures","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-03-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134088460","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-03-23DOI: 10.1109/ICMTS.2015.7106136
A. Tabašnikov, A. Walton, S. Smith
This paper reports the design and application of test structures for extracting the resistance of features formed when fabricating evaporated platinum (Pt) thin film structures on patterned, sputtered tantalum nitride (TaN). The combination of these two layers is used to produce an integrated resistive sensor structure. Two resistive features were considered during the test structure design: firstly the contact resistance between the two metal layers and secondly, the additional resistance introduced in the upper metal layer due to step coverage effects.
{"title":"Combined transmission line measurement structures to study thin film resistive sensor fabrication","authors":"A. Tabašnikov, A. Walton, S. Smith","doi":"10.1109/ICMTS.2015.7106136","DOIUrl":"https://doi.org/10.1109/ICMTS.2015.7106136","url":null,"abstract":"This paper reports the design and application of test structures for extracting the resistance of features formed when fabricating evaporated platinum (Pt) thin film structures on patterned, sputtered tantalum nitride (TaN). The combination of these two layers is used to produce an integrated resistive sensor structure. Two resistive features were considered during the test structure design: firstly the contact resistance between the two metal layers and secondly, the additional resistance introduced in the upper metal layer due to step coverage effects.","PeriodicalId":177627,"journal":{"name":"Proceedings of the 2015 International Conference on Microelectronic Test Structures","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-03-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134155185","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-03-23DOI: 10.1109/ICMTS.2015.7106113
Hanyu Sheng, T. Bettinger, J. Bates
The test structures are developed in order to enable quantification of the effects of deep trench and well proximity on MOSFETs in a 0.13 μm process. Two types of structures are analyzed: with the deep trench and the well edges varied together; and those edges are varied independently. The measurement results show that the deep trench and well proximity effects can influence device performance.
{"title":"The impact of deep trench and well proximity on MOSFET performance","authors":"Hanyu Sheng, T. Bettinger, J. Bates","doi":"10.1109/ICMTS.2015.7106113","DOIUrl":"https://doi.org/10.1109/ICMTS.2015.7106113","url":null,"abstract":"The test structures are developed in order to enable quantification of the effects of deep trench and well proximity on MOSFETs in a 0.13 μm process. Two types of structures are analyzed: with the deep trench and the well edges varied together; and those edges are varied independently. The measurement results show that the deep trench and well proximity effects can influence device performance.","PeriodicalId":177627,"journal":{"name":"Proceedings of the 2015 International Conference on Microelectronic Test Structures","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-03-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134495806","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-03-23DOI: 10.1109/ICMTS.2015.7106112
H. Shinkawata, Nobuo Tsuboi, A. Tsuda, Shingo Sato, Yasuo Yamaguchi
We introduce a new addressable test structure array using for mass production stage which is compacted doubly nesting array into Narrow Scribe Line which named as High sensitivity-Screening and Detection-decoder test structure in Scribe line (HSD-S). Abnormally high resistance as a soft failure via was detected and located in a 40nm CMOS technology. We captured a soft failure bit which had a high resistance via exhibiting over 160 times larger one.
{"title":"Development of a compacted doubly nesting array in Narrow Scribe Line aimed at detecting soft failures of interconnect via","authors":"H. Shinkawata, Nobuo Tsuboi, A. Tsuda, Shingo Sato, Yasuo Yamaguchi","doi":"10.1109/ICMTS.2015.7106112","DOIUrl":"https://doi.org/10.1109/ICMTS.2015.7106112","url":null,"abstract":"We introduce a new addressable test structure array using for mass production stage which is compacted doubly nesting array into Narrow Scribe Line which named as High sensitivity-Screening and Detection-decoder test structure in Scribe line (HSD-S). Abnormally high resistance as a soft failure via was detected and located in a 40nm CMOS technology. We captured a soft failure bit which had a high resistance via exhibiting over 160 times larger one.","PeriodicalId":177627,"journal":{"name":"Proceedings of the 2015 International Conference on Microelectronic Test Structures","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-03-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115442828","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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