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Generation of 460 GHz radiation by photomixing in low-temperature-grown MBE GaAs 低温生长MBE GaAs光混合产生460 GHz辐射
M. Mikulics, F. Siebe, A. Fox, M. Marso, A. Forster, H. Stuer, F. Schafer, R. Gusten, P. Kordos
We report on the fabrication and characterization of LT GaAs photomixers for generation of 460 GHz radiation. Resonant cavity structures and devices with various finger contacts geometry are used to enhance the photomixer performance. The DC responsivity shows only slight suppression with increased optical power in the range of 0.17-45 mW, i.e. space-charge effects are suppressed. A good agreement between the microwave power and DC responsivity (P/sub out/ /spl sim/ R/sup 2/) is obtained. Our results indicate that significant improvement in the output power, up to /spl sim/1 /spl mu/W of microwave radiation, can be obtained.
我们报道了用于产生460 GHz辐射的LT GaAs光电混合器的制造和表征。采用不同手指接触几何形状的谐振腔结构和器件来提高光电混合器的性能。在0.17-45 mW范围内,随着光功率的增加,直流响应率只有轻微的抑制,即空间电荷效应被抑制。微波功率与直流响应度(P/sub out/ /spl sim/ R/sup 2/)之间有很好的一致性。结果表明,微波辐射的输出功率显著提高,达到/spl sim/1 /spl mu/W。
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引用次数: 5
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The Fourth International Conference on Advanced Semiconductor Devices and Microsystem
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