Pub Date : 2002-12-16DOI: 10.1109/ASDAM.2002.1088499
H. Sitter
The enormously wide field of epitaxy cannot be covered in one paper since there are so many different methods partly specially designed or modified for the application for distinct materials. Therefore, this contribution is restricted to two epitaxial growth techniques, namely the Hot-Wall-Epitaxy (HWE) and the Atomic-Layer-Epitaxy (ALE), together with their modifications the Hot-Wall-Beam-Epitaxy and the Self-Limiting-Monolayer-Epitaxy. The main difference between HWE and ALE can be described in terms of thermodynamics. The HWE works very close to thermodynamic equilibrium, whereas the ALE is far away from thermodynamic equilibrium conditions. The main advantages and disadvantages will be elaborated, together with some significant applications for the growth of single layers, multilayers, superlattices and quantum well structures of II-VI compounds or organic semiconductors.
{"title":"Epitaxy - close and far away from thermodynamic equilibrium","authors":"H. Sitter","doi":"10.1109/ASDAM.2002.1088499","DOIUrl":"https://doi.org/10.1109/ASDAM.2002.1088499","url":null,"abstract":"The enormously wide field of epitaxy cannot be covered in one paper since there are so many different methods partly specially designed or modified for the application for distinct materials. Therefore, this contribution is restricted to two epitaxial growth techniques, namely the Hot-Wall-Epitaxy (HWE) and the Atomic-Layer-Epitaxy (ALE), together with their modifications the Hot-Wall-Beam-Epitaxy and the Self-Limiting-Monolayer-Epitaxy. The main difference between HWE and ALE can be described in terms of thermodynamics. The HWE works very close to thermodynamic equilibrium, whereas the ALE is far away from thermodynamic equilibrium conditions. The main advantages and disadvantages will be elaborated, together with some significant applications for the growth of single layers, multilayers, superlattices and quantum well structures of II-VI compounds or organic semiconductors.","PeriodicalId":179900,"journal":{"name":"The Fourth International Conference on Advanced Semiconductor Devices and Microsystem","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133159459","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-12-16DOI: 10.1109/ASDAM.2002.1088495
F. Dubecký, B. Zat’ko, V. Nečas, M. Sekáčová, J. Huran, P. Boháček, C. Ferrari, P. Kordos, A. Forster
In the work, evidence and role of minority carrier extraction at the high defect concentration interface metal-semi-insulating (SI) GaAs is presented. Improvement of performance of radiation detector based on SI GaAs if extraction system is used as quasi-ohmic "back" electrode is demonstrated.
{"title":"Role of minority carrier extraction in performance of radiation detectors based on semi-insulating GaAs","authors":"F. Dubecký, B. Zat’ko, V. Nečas, M. Sekáčová, J. Huran, P. Boháček, C. Ferrari, P. Kordos, A. Forster","doi":"10.1109/ASDAM.2002.1088495","DOIUrl":"https://doi.org/10.1109/ASDAM.2002.1088495","url":null,"abstract":"In the work, evidence and role of minority carrier extraction at the high defect concentration interface metal-semi-insulating (SI) GaAs is presented. Improvement of performance of radiation detector based on SI GaAs if extraction system is used as quasi-ohmic \"back\" electrode is demonstrated.","PeriodicalId":179900,"journal":{"name":"The Fourth International Conference on Advanced Semiconductor Devices and Microsystem","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129245755","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-12-16DOI: 10.1109/ASDAM.2002.1088471
J. Domaradzki, E. Prociów, D. Kaczmarek
TiO/sub 2/ - doped zirconium layers were deposited on silica substrate. It has been shown, that using a new hot target magnetron sputtering method it is possible to manufacture thin polycrystalline, dielectric films on amorphous substrate from metallic target even if post-deposition annealing was not done. Using X-Ray Diffraction (XRD) examinations crystalline phases of rutile were found both in as-deposited and in annealed samples. Scanning electron micrographs showed polycrystalline morphology with homogenous distribution of crystallites.
{"title":"Ti Zr dielectric layers deposited by hot target reactive magnetron sputtering","authors":"J. Domaradzki, E. Prociów, D. Kaczmarek","doi":"10.1109/ASDAM.2002.1088471","DOIUrl":"https://doi.org/10.1109/ASDAM.2002.1088471","url":null,"abstract":"TiO/sub 2/ - doped zirconium layers were deposited on silica substrate. It has been shown, that using a new hot target magnetron sputtering method it is possible to manufacture thin polycrystalline, dielectric films on amorphous substrate from metallic target even if post-deposition annealing was not done. Using X-Ray Diffraction (XRD) examinations crystalline phases of rutile were found both in as-deposited and in annealed samples. Scanning electron micrographs showed polycrystalline morphology with homogenous distribution of crystallites.","PeriodicalId":179900,"journal":{"name":"The Fourth International Conference on Advanced Semiconductor Devices and Microsystem","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124132864","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-12-16DOI: 10.1109/ASDAM.2002.1088481
L. Matay
Dielectric properties of HTR-3 and PAAC-16 polyimide thin films with thickness ranging from 0.95 to 2.4 /spl mu/m have been measured in the frequency range from 50 kHz to 14 MHz by using a small electrode in MPM system. The frequency dependence of ac conductivity for polyimide HTR-3 and PAAC-16 with thickness of polyimide film about 1.4 /spl mu/m was measured at room temperature. The curves exhibit two dispersive regions in which they had different slope. The dielectric loss and dissipation factor (tan /spl delta/) decrease in the frequency range <400 kHz and increase in the frequency range >400 kHz. With decreasing polyimide film thickness, the dielectric constant decreased.
{"title":"Studies of dielectric characteristics of spin-coated polyimide films","authors":"L. Matay","doi":"10.1109/ASDAM.2002.1088481","DOIUrl":"https://doi.org/10.1109/ASDAM.2002.1088481","url":null,"abstract":"Dielectric properties of HTR-3 and PAAC-16 polyimide thin films with thickness ranging from 0.95 to 2.4 /spl mu/m have been measured in the frequency range from 50 kHz to 14 MHz by using a small electrode in MPM system. The frequency dependence of ac conductivity for polyimide HTR-3 and PAAC-16 with thickness of polyimide film about 1.4 /spl mu/m was measured at room temperature. The curves exhibit two dispersive regions in which they had different slope. The dielectric loss and dissipation factor (tan /spl delta/) decrease in the frequency range <400 kHz and increase in the frequency range >400 kHz. With decreasing polyimide film thickness, the dielectric constant decreased.","PeriodicalId":179900,"journal":{"name":"The Fourth International Conference on Advanced Semiconductor Devices and Microsystem","volume":"110 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123358738","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-12-16DOI: 10.1109/ASDAM.2002.1088505
R. Srnanck, R. Kinder, D. Donoval, L. Peternai, I. Novotný, J. Geurts, D. Mcphail, R. Chater, Á. Nemcsics
Bevels through Si/SiGe structures were prepared by chemical etching. The surface of the bevels was smooth and bevel angles were in the range 10/sup -4/ rad. From the Raman spectra along the bevels the thickness and composition of SiGe alloys were determined and compared with photocurrent response spectrum of the structures.
{"title":"Chemical beveling of Si/SiGe structures for structure and material analysis by Raman spectroscopy","authors":"R. Srnanck, R. Kinder, D. Donoval, L. Peternai, I. Novotný, J. Geurts, D. Mcphail, R. Chater, Á. Nemcsics","doi":"10.1109/ASDAM.2002.1088505","DOIUrl":"https://doi.org/10.1109/ASDAM.2002.1088505","url":null,"abstract":"Bevels through Si/SiGe structures were prepared by chemical etching. The surface of the bevels was smooth and bevel angles were in the range 10/sup -4/ rad. From the Raman spectra along the bevels the thickness and composition of SiGe alloys were determined and compared with photocurrent response spectrum of the structures.","PeriodicalId":179900,"journal":{"name":"The Fourth International Conference on Advanced Semiconductor Devices and Microsystem","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125373682","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-12-16DOI: 10.1109/ASDAM.2002.1088496
M. Kučera, J. Novák
The paper reports on a photoluminescence (PL) characterisation of bismuth-doped gallium antimonide prepared by a travelling heater method (THM) with a Bi-zone. Detailed PL inspection of samples was done, including probing of various surface regions and PL temperature and pump intensity dependencies. In the material grown at 650/spl deg/C significant shifts of PL peaks and the band-gap narrowing (BGN) were proved by spectral characterisation methods, and caused most likely by tension inside the sample. Material grown at 420/spl deg/C exhibited very non-uniform luminescent properties. A part of the crystal near the crystal/seed interface showed almost pure excitonic spectra and a strong reduction of the GaSb native acceptor (NA). In regions distant from the interface PL features characteristic for a highly doped and compensated semiconductor were inspected.
{"title":"Photoluminescence characterisation of bismuth-doped GaSb","authors":"M. Kučera, J. Novák","doi":"10.1109/ASDAM.2002.1088496","DOIUrl":"https://doi.org/10.1109/ASDAM.2002.1088496","url":null,"abstract":"The paper reports on a photoluminescence (PL) characterisation of bismuth-doped gallium antimonide prepared by a travelling heater method (THM) with a Bi-zone. Detailed PL inspection of samples was done, including probing of various surface regions and PL temperature and pump intensity dependencies. In the material grown at 650/spl deg/C significant shifts of PL peaks and the band-gap narrowing (BGN) were proved by spectral characterisation methods, and caused most likely by tension inside the sample. Material grown at 420/spl deg/C exhibited very non-uniform luminescent properties. A part of the crystal near the crystal/seed interface showed almost pure excitonic spectra and a strong reduction of the GaSb native acceptor (NA). In regions distant from the interface PL features characteristic for a highly doped and compensated semiconductor were inspected.","PeriodicalId":179900,"journal":{"name":"The Fourth International Conference on Advanced Semiconductor Devices and Microsystem","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130120271","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-12-16DOI: 10.1109/ASDAM.2002.1088527
A. Fox, M. Marso, P. Javorka, P. Kordos
S-parameter and load pull measurements are used to characterize the properties of AlGaN/GaN HEMTs grown on sapphire or silicon substrates. From the small signal data it follows that the cut-off frequencies f/sub T/ and f/sub max/ increase with the number of fingers, i.e. with the gate width, because of reduced contribution of parasitics to the total gate capacitance. Load-pull measurement setup is described and results of the output power, gain and PAE at 7 GHz are shown.
{"title":"RF small-signal and power characterization of AlGaN/GaN HEMTs","authors":"A. Fox, M. Marso, P. Javorka, P. Kordos","doi":"10.1109/ASDAM.2002.1088527","DOIUrl":"https://doi.org/10.1109/ASDAM.2002.1088527","url":null,"abstract":"S-parameter and load pull measurements are used to characterize the properties of AlGaN/GaN HEMTs grown on sapphire or silicon substrates. From the small signal data it follows that the cut-off frequencies f/sub T/ and f/sub max/ increase with the number of fingers, i.e. with the gate width, because of reduced contribution of parasitics to the total gate capacitance. Load-pull measurement setup is described and results of the output power, gain and PAE at 7 GHz are shown.","PeriodicalId":179900,"journal":{"name":"The Fourth International Conference on Advanced Semiconductor Devices and Microsystem","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131400574","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-12-16DOI: 10.1109/ASDAM.2002.1088524
M. Johansson, M. Yousif, A. Sareen, P. Lundgren, S. Bengtsson, U. Sodervall
The electrical characteristics of MOS capacitors with ZrO/sub 2/ gate dielectric prepared by e-beam evaporation of Zr or Yttrium Stabilized Zirconia (YSZ) and subsequent thermal treatment are reported. With this method dielectrics corresponding to an equivalent oxide thickness (EOT) of 1.9 nm and a relative dielectric constant of approximately 15 have been prepared. The effect of annealing on Zr incorporation into the Si substrate is investigated SIMS analysis showed no signs of Zr diffusion in the substrate at temperatures as high as 900/spl deg/C and that significant diffusion from the dielectric layer occur only at 1100/spl deg/C.
{"title":"ZrO/sub 2/ and ZrO/sub 2//Y/sub 2/O/sub 3/ gate dielectrics prepared by evaporation and annealing processes","authors":"M. Johansson, M. Yousif, A. Sareen, P. Lundgren, S. Bengtsson, U. Sodervall","doi":"10.1109/ASDAM.2002.1088524","DOIUrl":"https://doi.org/10.1109/ASDAM.2002.1088524","url":null,"abstract":"The electrical characteristics of MOS capacitors with ZrO/sub 2/ gate dielectric prepared by e-beam evaporation of Zr or Yttrium Stabilized Zirconia (YSZ) and subsequent thermal treatment are reported. With this method dielectrics corresponding to an equivalent oxide thickness (EOT) of 1.9 nm and a relative dielectric constant of approximately 15 have been prepared. The effect of annealing on Zr incorporation into the Si substrate is investigated SIMS analysis showed no signs of Zr diffusion in the substrate at temperatures as high as 900/spl deg/C and that significant diffusion from the dielectric layer occur only at 1100/spl deg/C.","PeriodicalId":179900,"journal":{"name":"The Fourth International Conference on Advanced Semiconductor Devices and Microsystem","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132841070","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-12-16DOI: 10.1109/ASDAM.2002.1088474
O.A. Agueev, N.N. Moskovchenko, L.A. Svetlichnaya
In this work, thermodynamical rules of nanocrystalline SiC synthesis by solid state reactions are considered. Synthesis of SiC is likely at a temperature of more than 750 K under pressure of 10/sup -6/ Torr. Experimental research of electro-physical properties of nanocrystalline SiC samples is reported. The resistances of SiC samples are 48.5 M/spl Omega/ and 4.95 M/spl Omega/ and the thermal resistance coefficients are 3.58/spl times/10/sup -4/ K/sup -1/ and -3.89/spl times/10/sup -3/ K/sup -1/ depending on the fabrication regimes. It is shown that nanocrystalline SiC is a promising material for manufacturing chemical sensors.
{"title":"Synthesis and investigation of nanocrystalline SiC properties in sensor applications","authors":"O.A. Agueev, N.N. Moskovchenko, L.A. Svetlichnaya","doi":"10.1109/ASDAM.2002.1088474","DOIUrl":"https://doi.org/10.1109/ASDAM.2002.1088474","url":null,"abstract":"In this work, thermodynamical rules of nanocrystalline SiC synthesis by solid state reactions are considered. Synthesis of SiC is likely at a temperature of more than 750 K under pressure of 10/sup -6/ Torr. Experimental research of electro-physical properties of nanocrystalline SiC samples is reported. The resistances of SiC samples are 48.5 M/spl Omega/ and 4.95 M/spl Omega/ and the thermal resistance coefficients are 3.58/spl times/10/sup -4/ K/sup -1/ and -3.89/spl times/10/sup -3/ K/sup -1/ depending on the fabrication regimes. It is shown that nanocrystalline SiC is a promising material for manufacturing chemical sensors.","PeriodicalId":179900,"journal":{"name":"The Fourth International Conference on Advanced Semiconductor Devices and Microsystem","volume":"77 S338","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132227623","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-12-16DOI: 10.1109/ASDAM.2002.1088504
T. Perova, K. Lyutovich, D. Potapova, C. Parry, E. Kasper, R. A. Moore
Virtual substrates with high Ge content x of 0.25
利用MBE生长出了具有高Ge含量x (0.25
{"title":"Strain and composition in thin SiGe buffer layers with high Ge content studied by micro-Raman spectroscopy","authors":"T. Perova, K. Lyutovich, D. Potapova, C. Parry, E. Kasper, R. A. Moore","doi":"10.1109/ASDAM.2002.1088504","DOIUrl":"https://doi.org/10.1109/ASDAM.2002.1088504","url":null,"abstract":"Virtual substrates with high Ge content x of 0.25<x<0.5 for nMOSFET structures are grown by MBE. Thin strain relaxed SiGe buffers are of special importance for this application, therefore, sub-100 nm layer growth procedures have been developed Micro-Raman spectroscopy has been extensively employed for measurements of Ge content (x) and the degree of relaxation (r) in obtained virtual substrates in order to determine optimum process conditions. The application of frequency and intensity methods, suggested earlier by Mooney et al. and Tsang et al., have been analysed for determination of x in thin SiGe layers with high Ge content. It has been shown that the frequency method and Mooney's intensity method give quite reasonable values of x which correlate with those obtained by X-ray diffraction method.","PeriodicalId":179900,"journal":{"name":"The Fourth International Conference on Advanced Semiconductor Devices and Microsystem","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126642647","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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