Pub Date : 2002-12-16DOI: 10.1109/ASDAM.2002.1088493
P. Šutta, Q. Jackuliak
Transparent conducting oxides are materials with high transparency in a part of the light spectrum and high electrical conductivity. They are of special interest in applications like solar cells and microsystem technology. Indium-tin-oxide (ITO) belongs to the transparent conducting oxides and has also a number of other key characteristics. Microstructure of the ITO films more often than not influences their main properties as transparency and electrical conductivity. In this paper, the microstructure of the ITO films deposited on glass by a diode sputtering technique is investigated. X-ray powder diffraction analysis was used. According to the X-ray analysis, the investigated ITO films are polycrystalline with a strong preferred orientation of crystallites in [111] direction perpendicular to the substrate, they consist of two sublayers with a different disorder of the crystallites and different microstrains and dimensions of the crystallites.
{"title":"Microstructure of indium-tin-oxide films deposited on glass substrates","authors":"P. Šutta, Q. Jackuliak","doi":"10.1109/ASDAM.2002.1088493","DOIUrl":"https://doi.org/10.1109/ASDAM.2002.1088493","url":null,"abstract":"Transparent conducting oxides are materials with high transparency in a part of the light spectrum and high electrical conductivity. They are of special interest in applications like solar cells and microsystem technology. Indium-tin-oxide (ITO) belongs to the transparent conducting oxides and has also a number of other key characteristics. Microstructure of the ITO films more often than not influences their main properties as transparency and electrical conductivity. In this paper, the microstructure of the ITO films deposited on glass by a diode sputtering technique is investigated. X-ray powder diffraction analysis was used. According to the X-ray analysis, the investigated ITO films are polycrystalline with a strong preferred orientation of crystallites in [111] direction perpendicular to the substrate, they consist of two sublayers with a different disorder of the crystallites and different microstrains and dimensions of the crystallites.","PeriodicalId":179900,"journal":{"name":"The Fourth International Conference on Advanced Semiconductor Devices and Microsystem","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123937567","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-12-16DOI: 10.1109/ASDAM.2002.1088538
T. Klaffs, D. Presnov, V. Krupenin, J. Huls, J. Weis, F. Ahlers
The electrostatic potential difference between the bulk and the edge of a two dimensional electron system (2DES) shows a strong hysteresis in the integer quantum Hall regime. Fabricated at different positions on Hall bars, single electron transistors (SETs) were used as local potential probes. They allow us to distinguish between bulk- and edge-effects. Edge-SETs were placed at a distance of 1 /spl mu/m to an additional sidegate which provides the possibility of shifting the edge depletion region under the SET. In this case the hysteretic signal which is associated with the Hall voltage of induced eddy cut-rents is suppressed.
{"title":"Hysteresis effects due to eddy currents in the integer quantum Hall regime probed by an SET-electrometer","authors":"T. Klaffs, D. Presnov, V. Krupenin, J. Huls, J. Weis, F. Ahlers","doi":"10.1109/ASDAM.2002.1088538","DOIUrl":"https://doi.org/10.1109/ASDAM.2002.1088538","url":null,"abstract":"The electrostatic potential difference between the bulk and the edge of a two dimensional electron system (2DES) shows a strong hysteresis in the integer quantum Hall regime. Fabricated at different positions on Hall bars, single electron transistors (SETs) were used as local potential probes. They allow us to distinguish between bulk- and edge-effects. Edge-SETs were placed at a distance of 1 /spl mu/m to an additional sidegate which provides the possibility of shifting the edge depletion region under the SET. In this case the hysteretic signal which is associated with the Hall voltage of induced eddy cut-rents is suppressed.","PeriodicalId":179900,"journal":{"name":"The Fourth International Conference on Advanced Semiconductor Devices and Microsystem","volume":"2009 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127333495","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-12-16DOI: 10.1109/ASDAM.2002.1088514
R. Kinder, R. Srnánek, J. Walachová, L. Hulényi, M. Tlaczala, B. Ściana, D. Radziewicz
Determination of doping concentration profiles of GaAs on a bevelled surface by the probe method is presented. The bevelled structures were prepared by chemical etching. The results are compared with electrochemical capacitance-voltage technique. Some specific problems are discussed.
{"title":"Profiling of a GaAs structure using the probe method","authors":"R. Kinder, R. Srnánek, J. Walachová, L. Hulényi, M. Tlaczala, B. Ściana, D. Radziewicz","doi":"10.1109/ASDAM.2002.1088514","DOIUrl":"https://doi.org/10.1109/ASDAM.2002.1088514","url":null,"abstract":"Determination of doping concentration profiles of GaAs on a bevelled surface by the probe method is presented. The bevelled structures were prepared by chemical etching. The results are compared with electrochemical capacitance-voltage technique. Some specific problems are discussed.","PeriodicalId":179900,"journal":{"name":"The Fourth International Conference on Advanced Semiconductor Devices and Microsystem","volume":"58 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121447399","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-12-16DOI: 10.1109/ASDAM.2002.1088485
G. Khlyap, P. Sydorchuk
Two simple calculation techniques are proposed for numerical modeling and estimation of the main parameters determining the operational reliability of active elements based on A/sup 2/B/sup 6/ materials. In particular, room-temperature processes of charge carrier transport accounting for inhomogeneities of epitaxial film surfaces and the work function of the heterostructures based on the narrow-gap solid solution ZnCdHgTe are reported. The calculation algorithm is also presented.
{"title":"Numerical simulation of parameters of ZnCdHgTe films and ZnCdHgTe-based heterostructures","authors":"G. Khlyap, P. Sydorchuk","doi":"10.1109/ASDAM.2002.1088485","DOIUrl":"https://doi.org/10.1109/ASDAM.2002.1088485","url":null,"abstract":"Two simple calculation techniques are proposed for numerical modeling and estimation of the main parameters determining the operational reliability of active elements based on A/sup 2/B/sup 6/ materials. In particular, room-temperature processes of charge carrier transport accounting for inhomogeneities of epitaxial film surfaces and the work function of the heterostructures based on the narrow-gap solid solution ZnCdHgTe are reported. The calculation algorithm is also presented.","PeriodicalId":179900,"journal":{"name":"The Fourth International Conference on Advanced Semiconductor Devices and Microsystem","volume":"274 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121299757","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-12-16DOI: 10.1109/ASDAM.2002.1088472
E. Prociów, J. Domaradzki, D. Kaczmarck
In the paper structural and thermoelectrical properties of titanium oxides with palladium and gold dopants has been described The thermoelectric effect in the specimen doped by palladium has been found. Growing and nucleation of titanium films during deposition has been also discussed.
{"title":"Investigations of structural and electronic properties of TiO/sub 2/-doped layers deposited by hot target reactive magnetron sputtering method","authors":"E. Prociów, J. Domaradzki, D. Kaczmarck","doi":"10.1109/ASDAM.2002.1088472","DOIUrl":"https://doi.org/10.1109/ASDAM.2002.1088472","url":null,"abstract":"In the paper structural and thermoelectrical properties of titanium oxides with palladium and gold dopants has been described The thermoelectric effect in the specimen doped by palladium has been found. Growing and nucleation of titanium films during deposition has been also discussed.","PeriodicalId":179900,"journal":{"name":"The Fourth International Conference on Advanced Semiconductor Devices and Microsystem","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131138507","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-12-16DOI: 10.1109/ASDAM.2002.1088507
R. Kosiba, G. Ecke, J. Breza, J. Liday
Sputter induced effects due to the bombardment of GaAs with low energy Ar/sup +/ ions were investigated by means of AES. The ion energy varied between 0.3 and 5 keV, and the incidence angle was 80/spl deg/ with respect to the surface normal. Increasing As depletion in the surface region was observed with increasing argon ion energy. A shift of Auger peaks by 1 eV was defected for both As and Ga LMM Auger transitions with the increase of the argon energy. This shift is related to the lattice damage extension in the surface region due to argon bombardment.
{"title":"Auger investigations of GaAs sputtered with low-energy Ar/sup +/ ions at glancing incidence","authors":"R. Kosiba, G. Ecke, J. Breza, J. Liday","doi":"10.1109/ASDAM.2002.1088507","DOIUrl":"https://doi.org/10.1109/ASDAM.2002.1088507","url":null,"abstract":"Sputter induced effects due to the bombardment of GaAs with low energy Ar/sup +/ ions were investigated by means of AES. The ion energy varied between 0.3 and 5 keV, and the incidence angle was 80/spl deg/ with respect to the surface normal. Increasing As depletion in the surface region was observed with increasing argon ion energy. A shift of Auger peaks by 1 eV was defected for both As and Ga LMM Auger transitions with the increase of the argon energy. This shift is related to the lattice damage extension in the surface region due to argon bombardment.","PeriodicalId":179900,"journal":{"name":"The Fourth International Conference on Advanced Semiconductor Devices and Microsystem","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115062513","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-12-16DOI: 10.1109/ASDAM.2002.1088540
N. Hefyene, J. Sallese, C. Anghel, Adrian M. Ionescu, S. Frere, Renaud Gillon
This paper reports for the first time on the extension of the EKV compact model for high-voltage (HV) MOSFETs. A continuous expression is derived for the drift bias-dependent resistance of DMOS transistors and then validated in different operation regions (in linear and saturation regimes). When combined with EKV, the proposed new drift model provides very accurate DC modeling including quasi-saturation.
{"title":"EKV compact model extension for HV lateral DMOS transistors","authors":"N. Hefyene, J. Sallese, C. Anghel, Adrian M. Ionescu, S. Frere, Renaud Gillon","doi":"10.1109/ASDAM.2002.1088540","DOIUrl":"https://doi.org/10.1109/ASDAM.2002.1088540","url":null,"abstract":"This paper reports for the first time on the extension of the EKV compact model for high-voltage (HV) MOSFETs. A continuous expression is derived for the drift bias-dependent resistance of DMOS transistors and then validated in different operation regions (in linear and saturation regimes). When combined with EKV, the proposed new drift model provides very accurate DC modeling including quasi-saturation.","PeriodicalId":179900,"journal":{"name":"The Fourth International Conference on Advanced Semiconductor Devices and Microsystem","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115787423","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-12-16DOI: 10.1109/ASDAM.2002.1088523
M. Goryll, J. Moers, S. Trellenkamp, L. Vescan, M. Marso, P. Kordos, H. Luth
We have investigated a novel technique for growing silicon dioxide gate dielectrics of 3-4 nm thickness using wet oxidation at a low temperature of 600/spl deg/C. While this method is ideally suited to prevent dopant diffusion in small vertical MOSFETs the quality of the oxide layers is comparable with conventional gate oxide layers being grown by rapid thermal processing. Ellipsometric thickness measurements show a thickness variation of only 2% over a 3" wafer. To determine the interface state density we used both the QS-HF-CV and the conductance measurement method. A comparison of these two measurement methods shows that the latter can be applied even in the presence of a high tunnelling cut-rent through the thin oxide layers. We were able to achieve a midgap interface state density of 3/spl times/10/sup 11/cm/sup -2/eV/sup -1/, being comparable with previously published results.
{"title":"Thin low-temperature gate oxides for vertical field-effect transistors","authors":"M. Goryll, J. Moers, S. Trellenkamp, L. Vescan, M. Marso, P. Kordos, H. Luth","doi":"10.1109/ASDAM.2002.1088523","DOIUrl":"https://doi.org/10.1109/ASDAM.2002.1088523","url":null,"abstract":"We have investigated a novel technique for growing silicon dioxide gate dielectrics of 3-4 nm thickness using wet oxidation at a low temperature of 600/spl deg/C. While this method is ideally suited to prevent dopant diffusion in small vertical MOSFETs the quality of the oxide layers is comparable with conventional gate oxide layers being grown by rapid thermal processing. Ellipsometric thickness measurements show a thickness variation of only 2% over a 3\" wafer. To determine the interface state density we used both the QS-HF-CV and the conductance measurement method. A comparison of these two measurement methods shows that the latter can be applied even in the presence of a high tunnelling cut-rent through the thin oxide layers. We were able to achieve a midgap interface state density of 3/spl times/10/sup 11/cm/sup -2/eV/sup -1/, being comparable with previously published results.","PeriodicalId":179900,"journal":{"name":"The Fourth International Conference on Advanced Semiconductor Devices and Microsystem","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125776001","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-12-16DOI: 10.1109/ASDAM.2002.1088506
B. Rheinlander, R. Srnánek, J. Kováč
The theoretical evaluation of the Raman intensities ratio of LO and TO phonons along the beveled GaAs structure containing Si /spl delta/-doped layer was performed. Excellent agreement with measured spectra was obtained.
{"title":"Evaluation of /spl delta/-layer depth profiles detected on beveled semiconductor structures by micro Raman spectroscopy","authors":"B. Rheinlander, R. Srnánek, J. Kováč","doi":"10.1109/ASDAM.2002.1088506","DOIUrl":"https://doi.org/10.1109/ASDAM.2002.1088506","url":null,"abstract":"The theoretical evaluation of the Raman intensities ratio of LO and TO phonons along the beveled GaAs structure containing Si /spl delta/-doped layer was performed. Excellent agreement with measured spectra was obtained.","PeriodicalId":179900,"journal":{"name":"The Fourth International Conference on Advanced Semiconductor Devices and Microsystem","volume":"287 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134009458","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-12-16DOI: 10.1109/ASDAM.2002.1088529
M. Wolter, P. Javorka, M. Marso, R. Carius, M. Heuken, H. Luth, P. Kordos
The origin of the current collapse which is present in HEMTs on AlGaN/GaN heterostructures is assigned to deep level states in the layer system. Using photoionization spectroscopy we investigated these levels in doped and undoped HEMT structures on sapphire. In both HEMTs we found two different trap energies of about 3.2eV and 2.9eV. By varying the gate voltage we found that a decrease of the gate bias leads to an increased occupation of trap states involved in the current collapse, which indicates that the concentration of trapped donor surface states has a strong influence on the current collapse.
{"title":"Investigation of current collapse in doped and undoped AlGaN/GaN HEMTs","authors":"M. Wolter, P. Javorka, M. Marso, R. Carius, M. Heuken, H. Luth, P. Kordos","doi":"10.1109/ASDAM.2002.1088529","DOIUrl":"https://doi.org/10.1109/ASDAM.2002.1088529","url":null,"abstract":"The origin of the current collapse which is present in HEMTs on AlGaN/GaN heterostructures is assigned to deep level states in the layer system. Using photoionization spectroscopy we investigated these levels in doped and undoped HEMT structures on sapphire. In both HEMTs we found two different trap energies of about 3.2eV and 2.9eV. By varying the gate voltage we found that a decrease of the gate bias leads to an increased occupation of trap states involved in the current collapse, which indicates that the concentration of trapped donor surface states has a strong influence on the current collapse.","PeriodicalId":179900,"journal":{"name":"The Fourth International Conference on Advanced Semiconductor Devices and Microsystem","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129321378","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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