Pub Date : 2002-12-16DOI: 10.1109/ASDAM.2002.1088511
G. Khlyap, P. Sydorchuk
The paper reports on the first results of heat transfer modeling performed for metal-semiconductor structures based on A/sup 2/B/sup 6/ compounds. Current-voltage dependences were studied and numerically simulated in order to clarify the effect of thermal generation from the metallic contacts regions observed under electric field application. It is shown that one of principal parameters of the current-voltage dependence (determining the mode of operation of an active device), namely the non-ideality factor, is strongly influenced by the heat flowing through the contact regions.
{"title":"Heat transfer modeling in metal-semiconductor structures","authors":"G. Khlyap, P. Sydorchuk","doi":"10.1109/ASDAM.2002.1088511","DOIUrl":"https://doi.org/10.1109/ASDAM.2002.1088511","url":null,"abstract":"The paper reports on the first results of heat transfer modeling performed for metal-semiconductor structures based on A/sup 2/B/sup 6/ compounds. Current-voltage dependences were studied and numerically simulated in order to clarify the effect of thermal generation from the metallic contacts regions observed under electric field application. It is shown that one of principal parameters of the current-voltage dependence (determining the mode of operation of an active device), namely the non-ideality factor, is strongly influenced by the heat flowing through the contact regions.","PeriodicalId":179900,"journal":{"name":"The Fourth International Conference on Advanced Semiconductor Devices and Microsystem","volume":"167 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122863405","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-12-16DOI: 10.1109/ASDAM.2002.1088477
N. Babushkina, S. Malyshev, L. Romanova, A. Chizh, D. Zhygulin
The study of the charge properties of Dy/sub x/O/sub y/ films with the high permittivity (/spl epsiv//spl sim/10/spl divide/12) on the n-Si [100] is presented It is shown that suitable charge properties of the Ni-Dy/sub x/O/sub y/-n-Si [100] structures are obtained under the Dy evaporation in Ar/O/sub 2/ environment and following film oxidation in oxygen stream at the temperatures 360/spl divide/380/spl deg/C. Based on the results obtained in this study it is concluded that the Dy/sub x/O/sub y/ films are good compatible gate dielectric material with the high permittivity for the silicon MIS structures.
{"title":"Charge properties of MIS structures Ni-Dy/sub x/O/sub y/-n-Si [100]","authors":"N. Babushkina, S. Malyshev, L. Romanova, A. Chizh, D. Zhygulin","doi":"10.1109/ASDAM.2002.1088477","DOIUrl":"https://doi.org/10.1109/ASDAM.2002.1088477","url":null,"abstract":"The study of the charge properties of Dy/sub x/O/sub y/ films with the high permittivity (/spl epsiv//spl sim/10/spl divide/12) on the n-Si [100] is presented It is shown that suitable charge properties of the Ni-Dy/sub x/O/sub y/-n-Si [100] structures are obtained under the Dy evaporation in Ar/O/sub 2/ environment and following film oxidation in oxygen stream at the temperatures 360/spl divide/380/spl deg/C. Based on the results obtained in this study it is concluded that the Dy/sub x/O/sub y/ films are good compatible gate dielectric material with the high permittivity for the silicon MIS structures.","PeriodicalId":179900,"journal":{"name":"The Fourth International Conference on Advanced Semiconductor Devices and Microsystem","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126452409","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-12-16DOI: 10.1109/ASDAM.2002.1088473
P. Machac
The contribution deals with the problems of the Sn/Pd/GaAs contacts with a thin layer of a reactive metal - chromium, titanium and nickel. These metals react with the native oxides on the GaAs surface and affect the parameters of the contact structure. The influence of the reactive metals to the contact resistivity and to the thermal stability of prepared contact structures was followed. The best of all seems to be the chromium structure deposited at the temperature of 130/spl deg/C. This metallization reached the contact resistivity of 5.73/spl times/10/sup -6/ /spl Omega/cm/sup 2/, during the stability test at 400/spl deg/C temperature the partial deterioration of resistivity occurred only after 10 hours.
{"title":"Sn/Pd/GaAs ohmic contacts with reactive metals","authors":"P. Machac","doi":"10.1109/ASDAM.2002.1088473","DOIUrl":"https://doi.org/10.1109/ASDAM.2002.1088473","url":null,"abstract":"The contribution deals with the problems of the Sn/Pd/GaAs contacts with a thin layer of a reactive metal - chromium, titanium and nickel. These metals react with the native oxides on the GaAs surface and affect the parameters of the contact structure. The influence of the reactive metals to the contact resistivity and to the thermal stability of prepared contact structures was followed. The best of all seems to be the chromium structure deposited at the temperature of 130/spl deg/C. This metallization reached the contact resistivity of 5.73/spl times/10/sup -6/ /spl Omega/cm/sup 2/, during the stability test at 400/spl deg/C temperature the partial deterioration of resistivity occurred only after 10 hours.","PeriodicalId":179900,"journal":{"name":"The Fourth International Conference on Advanced Semiconductor Devices and Microsystem","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131365383","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-12-16DOI: 10.1109/ASDAM.2002.1088480
J. Janı́k, F. Balon, A. Kromka, V. Dúbravcová, M. Kadlecíková, P. Krepsova
Negative electron affinity of diamond layers can successfully be used for field electron emission applications. There are many devices, where cold electron emission is needed For example, electron microscope, flat panel displays, cathodes of screens and others may employ the negative electron affinity of diamond. The aim of this work was to prepare diamond layers on wire substrates in order to provide field electron emission with great stability and low threshold voltage. The prepared diamond layers on tungsten wires showed such electron field emission properties. They provided a current density of J=0.4 mA/cm/sup 2/ at 3 V//spl mu/m while the turn-on field was about 2 V//spl mu/m. The effective work function estimated from the Fowler-Nordheim plot of the I-V curve was /spl Phi/=0.05 eV. The surfaces of emitters have been investigated by micro-Raman spectroscopy and optical microscopy.
{"title":"Electron emission from diamond layer on tungsten wire measured in cylindrical electrode configuration","authors":"J. Janı́k, F. Balon, A. Kromka, V. Dúbravcová, M. Kadlecíková, P. Krepsova","doi":"10.1109/ASDAM.2002.1088480","DOIUrl":"https://doi.org/10.1109/ASDAM.2002.1088480","url":null,"abstract":"Negative electron affinity of diamond layers can successfully be used for field electron emission applications. There are many devices, where cold electron emission is needed For example, electron microscope, flat panel displays, cathodes of screens and others may employ the negative electron affinity of diamond. The aim of this work was to prepare diamond layers on wire substrates in order to provide field electron emission with great stability and low threshold voltage. The prepared diamond layers on tungsten wires showed such electron field emission properties. They provided a current density of J=0.4 mA/cm/sup 2/ at 3 V//spl mu/m while the turn-on field was about 2 V//spl mu/m. The effective work function estimated from the Fowler-Nordheim plot of the I-V curve was /spl Phi/=0.05 eV. The surfaces of emitters have been investigated by micro-Raman spectroscopy and optical microscopy.","PeriodicalId":179900,"journal":{"name":"The Fourth International Conference on Advanced Semiconductor Devices and Microsystem","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134094011","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-12-16DOI: 10.1109/ASDAM.2002.1088531
B. Mizaikoff, C. Kranz
Recent advances in micro- and nanotechnology determine current trends in the field of chemical sensor technology enabling micro- and nanofabrication of device components and entire sensing systems. However, not all properties of chemical sensing systems necessarily improve with decreasing physical dimensions. Challenges of applying chemical sensors in a real-world environment are discussed and implicit consequences for scaling down chemical sensing systems to the micro- and nanoscale are derived. General aspects of miniaturized chemical sensor technology is contrasted with selected examples elucidating trends in the field of mid-infrared optical sensors and scanning probe tip integrated electrochemical sensing devices.
{"title":"Interfacing chemistry with microdevices: Potential and challenges of chemical microsensors","authors":"B. Mizaikoff, C. Kranz","doi":"10.1109/ASDAM.2002.1088531","DOIUrl":"https://doi.org/10.1109/ASDAM.2002.1088531","url":null,"abstract":"Recent advances in micro- and nanotechnology determine current trends in the field of chemical sensor technology enabling micro- and nanofabrication of device components and entire sensing systems. However, not all properties of chemical sensing systems necessarily improve with decreasing physical dimensions. Challenges of applying chemical sensors in a real-world environment are discussed and implicit consequences for scaling down chemical sensing systems to the micro- and nanoscale are derived. General aspects of miniaturized chemical sensor technology is contrasted with selected examples elucidating trends in the field of mid-infrared optical sensors and scanning probe tip integrated electrochemical sensing devices.","PeriodicalId":179900,"journal":{"name":"The Fourth International Conference on Advanced Semiconductor Devices and Microsystem","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123422132","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-12-16DOI: 10.1109/ASDAM.2002.1088542
M. Zeman
Thin-film silicon solar cell technology based on hydrogenated amorphous silicon has matured over the last two decades and is capable of delivering commercial modules with almost 10% stabilized efficiency. The status of thin-film silicon cell technology is reviewed by comparing it to other major solar cell technologies. The basic operation principles and the shortcomings of a-Si:H solar cells are outlined. The multi-junction and multi-band gap approach for obtaining highly efficient a-Si:H based solar cells is introduced. Application of novel materials, such as hydrogenated microcrystalline silicon and protocrystalline silicon, and efficient light trapping techniques in the multi-junction solar structures is highlighted. A novel temporary superstrate concept for a low-cost roll-to-roll production of thin-film silicon solar cells that has been developed in the Netherlands is presented.
{"title":"New trends in thin-film silicon solar cell technology","authors":"M. Zeman","doi":"10.1109/ASDAM.2002.1088542","DOIUrl":"https://doi.org/10.1109/ASDAM.2002.1088542","url":null,"abstract":"Thin-film silicon solar cell technology based on hydrogenated amorphous silicon has matured over the last two decades and is capable of delivering commercial modules with almost 10% stabilized efficiency. The status of thin-film silicon cell technology is reviewed by comparing it to other major solar cell technologies. The basic operation principles and the shortcomings of a-Si:H solar cells are outlined. The multi-junction and multi-band gap approach for obtaining highly efficient a-Si:H based solar cells is introduced. Application of novel materials, such as hydrogenated microcrystalline silicon and protocrystalline silicon, and efficient light trapping techniques in the multi-junction solar structures is highlighted. A novel temporary superstrate concept for a low-cost roll-to-roll production of thin-film silicon solar cells that has been developed in the Netherlands is presented.","PeriodicalId":179900,"journal":{"name":"The Fourth International Conference on Advanced Semiconductor Devices and Microsystem","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127573946","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-12-16DOI: 10.1109/ASDAM.2002.1088519
J. Novak, J. Foit
The ICs in LSI technology require multilayer connecting-lead systems employing large leads density, diminishing the physical distance between individual leads. The small lead-to-lead separation results increased crosstalk effects inside the integrated circuits. A method was designed to facilitate the forecast of crosstalks in integrated circuits using simple passive LCR circuit models of connecting lines. It appears possible, given a well defined standard interconnecting technology, to forecast the maximum value of crosstalk in a digital system regardless of the physical length of the mutually interfering leads. This presents a major design advantage since the maximum crossialk value can be determined using simple equations without any need to pe form circuit simulations of digital systems including the influence of parasitic couplings. The application of these limit cases can speed up considerably the design of electromagnetically compatible electronic systems.
{"title":"Crosstalk analysis in CMOS integrated circuits","authors":"J. Novak, J. Foit","doi":"10.1109/ASDAM.2002.1088519","DOIUrl":"https://doi.org/10.1109/ASDAM.2002.1088519","url":null,"abstract":"The ICs in LSI technology require multilayer connecting-lead systems employing large leads density, diminishing the physical distance between individual leads. The small lead-to-lead separation results increased crosstalk effects inside the integrated circuits. A method was designed to facilitate the forecast of crosstalks in integrated circuits using simple passive LCR circuit models of connecting lines. It appears possible, given a well defined standard interconnecting technology, to forecast the maximum value of crosstalk in a digital system regardless of the physical length of the mutually interfering leads. This presents a major design advantage since the maximum crossialk value can be determined using simple equations without any need to pe form circuit simulations of digital systems including the influence of parasitic couplings. The application of these limit cases can speed up considerably the design of electromagnetically compatible electronic systems.","PeriodicalId":179900,"journal":{"name":"The Fourth International Conference on Advanced Semiconductor Devices and Microsystem","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125305719","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-12-16DOI: 10.1109/ASDAM.2002.1088501
J. Darmo, T. Muller, G. Strasser, K. Unterrainer, T. Le, G. Tempea, A. Stingl
A photoconductive terahertz (THz) emitter with an integrated Bragg mirror is presented. The emitter exhibits improved emission efficiency by a factor of 10 with respect to an emitter without a mirror. In addition, we demonstrate for the first time the electrical modulation of the THz output radiation with frequencies up to 100 kHz.
{"title":"Photoconductive terahertz emitter with an integrated semiconductor Bragg mirror","authors":"J. Darmo, T. Muller, G. Strasser, K. Unterrainer, T. Le, G. Tempea, A. Stingl","doi":"10.1109/ASDAM.2002.1088501","DOIUrl":"https://doi.org/10.1109/ASDAM.2002.1088501","url":null,"abstract":"A photoconductive terahertz (THz) emitter with an integrated Bragg mirror is presented. The emitter exhibits improved emission efficiency by a factor of 10 with respect to an emitter without a mirror. In addition, we demonstrate for the first time the electrical modulation of the THz output radiation with frequencies up to 100 kHz.","PeriodicalId":179900,"journal":{"name":"The Fourth International Conference on Advanced Semiconductor Devices and Microsystem","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115236305","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/ASDAM.2002.1088487
J. Kremmer, I. Hotovy, V. Rehacek, J. Široký, L. Spieß, J. Schawohl
Nickel oxide (NiO) thin films, for use as function sensor layers for chemical sensors, have been deposited on Si and alumina substrates by DC magnetron sputtering from a pure metallic Ni target in an Ar/O/sub 2/ mixture. The oxygen content in the gas mixture varied from 15 to 45%. The influence of deposition parameters and annealing temperature on the structural properties and surface roughness of the undoped and doped NiO films has been analyzed by X-ray diffraction (XRD) and atomic force microscopy (AFM). XRD has confirmed the polycrystalline structure of NiO films and also revealed the changes of the lattice constant of polycrystalline NiO films depending on the annealing temperatures. The NiO thin films were tested in order to investigate their response to hydrogen in the interval 0-1.5 vol% and ethanol in the interval 0-1200 ppm at different operating temperatures.
{"title":"Physical and structural characterization of NiO films for gas detection","authors":"J. Kremmer, I. Hotovy, V. Rehacek, J. Široký, L. Spieß, J. Schawohl","doi":"10.1109/ASDAM.2002.1088487","DOIUrl":"https://doi.org/10.1109/ASDAM.2002.1088487","url":null,"abstract":"Nickel oxide (NiO) thin films, for use as function sensor layers for chemical sensors, have been deposited on Si and alumina substrates by DC magnetron sputtering from a pure metallic Ni target in an Ar/O/sub 2/ mixture. The oxygen content in the gas mixture varied from 15 to 45%. The influence of deposition parameters and annealing temperature on the structural properties and surface roughness of the undoped and doped NiO films has been analyzed by X-ray diffraction (XRD) and atomic force microscopy (AFM). XRD has confirmed the polycrystalline structure of NiO films and also revealed the changes of the lattice constant of polycrystalline NiO films depending on the annealing temperatures. The NiO thin films were tested in order to investigate their response to hydrogen in the interval 0-1.5 vol% and ethanol in the interval 0-1200 ppm at different operating temperatures.","PeriodicalId":179900,"journal":{"name":"The Fourth International Conference on Advanced Semiconductor Devices and Microsystem","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133565920","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/ASDAM.2002.1088516
M. Klasovitý, M. Tomáška
Presents a method for verification of important coplanar waveguide parameters. It employs a simplex optimization algorithm for transmission line model identification from on-wafer S-parameter measurements in a wide frequency range. The method was implemented in a control program for automated S-parameter measurements and applied for characterization of micromachined AlGaAs and InGaP coplanar waveguides.
{"title":"Coplanar waveguide modeling based on scattering parameter measurements","authors":"M. Klasovitý, M. Tomáška","doi":"10.1109/ASDAM.2002.1088516","DOIUrl":"https://doi.org/10.1109/ASDAM.2002.1088516","url":null,"abstract":"Presents a method for verification of important coplanar waveguide parameters. It employs a simplex optimization algorithm for transmission line model identification from on-wafer S-parameter measurements in a wide frequency range. The method was implemented in a control program for automated S-parameter measurements and applied for characterization of micromachined AlGaAs and InGaP coplanar waveguides.","PeriodicalId":179900,"journal":{"name":"The Fourth International Conference on Advanced Semiconductor Devices and Microsystem","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128886153","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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