A method for fast and efficient deep etching of bulk silicon, using parallel capacitively coupled plasma is presented. The effects of the masking materials and RIE conditions are discussed. Based on the experimental results, a 1000 /spl Aring/ thick Al film sufficiently protects the unexposed substrate while allowing the etching of a 350 /spl mu/m deep hole with an area of 3/spl times/3mm/sup 2/ when etching with SF/sub 6//CHF/sub 3//O/sub 2/ plasma. A 2000 /spl mu/m long and 100 /spl mu/m wide (with layers of Al/SiO/sub 2//Si and thickness of 0.1/spl mu/m/2.2/spl mu/m/40/spl mu/m respectively) cantilever has been achieved. A silicon etch rate up to 2.5 to 2.8/spl mu/m/min has been obtained and an anisotropy of A = 0.5 (A=I-V/H, where V=horizontal undercut, H=etch depth) has been obtained. The technique was developed mainly for bulk micromachining of silicon or composite silicon cantilever structures.
{"title":"Deep reactive ion etching of silicon using an aluminum etching mask","authors":"Wei-Chih Wang, J. Ho, P. Reinhall","doi":"10.1117/12.464192","DOIUrl":"https://doi.org/10.1117/12.464192","url":null,"abstract":"A method for fast and efficient deep etching of bulk silicon, using parallel capacitively coupled plasma is presented. The effects of the masking materials and RIE conditions are discussed. Based on the experimental results, a 1000 /spl Aring/ thick Al film sufficiently protects the unexposed substrate while allowing the etching of a 350 /spl mu/m deep hole with an area of 3/spl times/3mm/sup 2/ when etching with SF/sub 6//CHF/sub 3//O/sub 2/ plasma. A 2000 /spl mu/m long and 100 /spl mu/m wide (with layers of Al/SiO/sub 2//Si and thickness of 0.1/spl mu/m/2.2/spl mu/m/40/spl mu/m respectively) cantilever has been achieved. A silicon etch rate up to 2.5 to 2.8/spl mu/m/min has been obtained and an anisotropy of A = 0.5 (A=I-V/H, where V=horizontal undercut, H=etch depth) has been obtained. The technique was developed mainly for bulk micromachining of silicon or composite silicon cantilever structures.","PeriodicalId":179900,"journal":{"name":"The Fourth International Conference on Advanced Semiconductor Devices and Microsystem","volume":"110 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133805181","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-12-16DOI: 10.1109/ASDAM.2002.1088512
A. Chizh, S. Malyshev
The general model of the microwave photodiode based on the harmonic balance method is represented. The application of this model for modelling of the photodiode used in microwave circuits for optical signal detection, optical control and mixing is shown.
{"title":"Modelling of the photodiode in various microwave applications","authors":"A. Chizh, S. Malyshev","doi":"10.1109/ASDAM.2002.1088512","DOIUrl":"https://doi.org/10.1109/ASDAM.2002.1088512","url":null,"abstract":"The general model of the microwave photodiode based on the harmonic balance method is represented. The application of this model for modelling of the photodiode used in microwave circuits for optical signal detection, optical control and mixing is shown.","PeriodicalId":179900,"journal":{"name":"The Fourth International Conference on Advanced Semiconductor Devices and Microsystem","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121372439","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-12-16DOI: 10.1109/ASDAM.2002.1088536
G. Wachutka, G. Schrag, R. Sattler
The operation of many mechatronical microdevices is significantly affected by viscous fluid damping effects. We present a methodology how these effects can be properly included in physically based microdevice and full system models for the effort-economizing and yet accurate predictive simulation of the operation of micro-mechatronical systems. The usability and quality of the approach is demonstrated by computational results for highly perforated microdevices.
{"title":"Macromodeling of fluidic damping effects in microdevices","authors":"G. Wachutka, G. Schrag, R. Sattler","doi":"10.1109/ASDAM.2002.1088536","DOIUrl":"https://doi.org/10.1109/ASDAM.2002.1088536","url":null,"abstract":"The operation of many mechatronical microdevices is significantly affected by viscous fluid damping effects. We present a methodology how these effects can be properly included in physically based microdevice and full system models for the effort-economizing and yet accurate predictive simulation of the operation of micro-mechatronical systems. The usability and quality of the approach is demonstrated by computational results for highly perforated microdevices.","PeriodicalId":179900,"journal":{"name":"The Fourth International Conference on Advanced Semiconductor Devices and Microsystem","volume":"59 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115371648","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-12-16DOI: 10.1109/ASDAM.2002.1088476
J. Huran, I. Hotovy, A. Kobzev, N. Balalykin
We present properties of nitrogen-doped amorphous silicon carbide films grown by PECVD and annealed by a pulsed electron beam. Samples with different amounts of N were achieved by a small addition of ammonia NH/sub 3/ into the gas mixture of silane SiH/sub 4/ and methane CH/sub 4/, which were directly introduced into the reaction chamber. A simulation of the RBS spectra was used to calculate the concentration of carbon, silicon and nitrogen. The current-voltage (I-V) characteristics of diodes made of doped and irradiated SiC films grown on silicon substrates were studied.
{"title":"PECVD nitrogen doped a-SiC:H films: properties","authors":"J. Huran, I. Hotovy, A. Kobzev, N. Balalykin","doi":"10.1109/ASDAM.2002.1088476","DOIUrl":"https://doi.org/10.1109/ASDAM.2002.1088476","url":null,"abstract":"We present properties of nitrogen-doped amorphous silicon carbide films grown by PECVD and annealed by a pulsed electron beam. Samples with different amounts of N were achieved by a small addition of ammonia NH/sub 3/ into the gas mixture of silane SiH/sub 4/ and methane CH/sub 4/, which were directly introduced into the reaction chamber. A simulation of the RBS spectra was used to calculate the concentration of carbon, silicon and nitrogen. The current-voltage (I-V) characteristics of diodes made of doped and irradiated SiC films grown on silicon substrates were studied.","PeriodicalId":179900,"journal":{"name":"The Fourth International Conference on Advanced Semiconductor Devices and Microsystem","volume":"130 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130132090","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-12-16DOI: 10.1109/ASDAM.2002.1088468
J. Jakabovic, T. Wong, O. Lengyel, J. Kováč, C. Lee, S. Lee
We present the study of optical emission properties carried out on Alq/sub 3/ organic solutions and evaporated films prepared by doping with dye molecules of DCM. The maxima of spontaneous emission spectral characteristics of Alq/sub 3/:DCM films measured by photo- and electroluminescence shifts towards the higher wavelengths from 608 - 660 nm with simultaneous decrease in spectral intensities within the investigated DCM doping concentration range of 0.9 11%, respectively. The maximum emission intensity was observed at DCM doping concentration around 1% causing peak emission near 628 nm by optical pumping. Optically excited amplified spontaneous emission and laser spectrum showing evenly spaced resonant cavity modes with preferential emission peak at 621.4 nm have been measured on waveguide structures prepared onto GaAs substrate.
{"title":"Optical properties investigations of organic Alq/sub 3/ layers doped by DCM","authors":"J. Jakabovic, T. Wong, O. Lengyel, J. Kováč, C. Lee, S. Lee","doi":"10.1109/ASDAM.2002.1088468","DOIUrl":"https://doi.org/10.1109/ASDAM.2002.1088468","url":null,"abstract":"We present the study of optical emission properties carried out on Alq/sub 3/ organic solutions and evaporated films prepared by doping with dye molecules of DCM. The maxima of spontaneous emission spectral characteristics of Alq/sub 3/:DCM films measured by photo- and electroluminescence shifts towards the higher wavelengths from 608 - 660 nm with simultaneous decrease in spectral intensities within the investigated DCM doping concentration range of 0.9 11%, respectively. The maximum emission intensity was observed at DCM doping concentration around 1% causing peak emission near 628 nm by optical pumping. Optically excited amplified spontaneous emission and laser spectrum showing evenly spaced resonant cavity modes with preferential emission peak at 621.4 nm have been measured on waveguide structures prepared onto GaAs substrate.","PeriodicalId":179900,"journal":{"name":"The Fourth International Conference on Advanced Semiconductor Devices and Microsystem","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125070092","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-12-16DOI: 10.1109/ASDAM.2002.1088513
C. Popa
The differential amplifier presented in this paper is based on the principle of the constant sum of the gate-source voltages, which assures, in a first-order analysis, the linearization of the circuit. The new idea is to cancel the nonlinearities introduced by the second-order effects such as short channel effect, mobility degradation and bulk effect by using a parallel connection of two complementary excited differential stages. The circuit is implemented in 0.35 /spl mu/m CMOS technology on a die area of 20 /spl mu//35 /spl mu/. The SPICE simulation using BSIM3v3 model and based on the mentioned technology parameters validates the estimated theoretical results about the linearity (a linearity error of 0.5% for an extended input range of 1 V).
{"title":"A 0.35/spl mu/m CMOS linear differential amplifier independent of threshold voltage","authors":"C. Popa","doi":"10.1109/ASDAM.2002.1088513","DOIUrl":"https://doi.org/10.1109/ASDAM.2002.1088513","url":null,"abstract":"The differential amplifier presented in this paper is based on the principle of the constant sum of the gate-source voltages, which assures, in a first-order analysis, the linearization of the circuit. The new idea is to cancel the nonlinearities introduced by the second-order effects such as short channel effect, mobility degradation and bulk effect by using a parallel connection of two complementary excited differential stages. The circuit is implemented in 0.35 /spl mu/m CMOS technology on a die area of 20 /spl mu//35 /spl mu/. The SPICE simulation using BSIM3v3 model and based on the mentioned technology parameters validates the estimated theoretical results about the linearity (a linearity error of 0.5% for an extended input range of 1 V).","PeriodicalId":179900,"journal":{"name":"The Fourth International Conference on Advanced Semiconductor Devices and Microsystem","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123578163","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-12-16DOI: 10.1109/ASDAM.2002.1088492
H. Moravcová, J. Voves
Bloch Oscillations (BO) in AlGaAs/GaAs superlattices were studied by Monte Carlo method. A two-dimensional model based on the effective mass approximation was used for studying electron miniband transport. Scattering on polar optical and acoustic phonons as well as impurities were taken into account. Behavior of BO was studied under different conditions such as intensity of electric field temperature and concentration of ionised impurities.
{"title":"Terahertz Bloch oscillations in semiconductor superlattices","authors":"H. Moravcová, J. Voves","doi":"10.1109/ASDAM.2002.1088492","DOIUrl":"https://doi.org/10.1109/ASDAM.2002.1088492","url":null,"abstract":"Bloch Oscillations (BO) in AlGaAs/GaAs superlattices were studied by Monte Carlo method. A two-dimensional model based on the effective mass approximation was used for studying electron miniband transport. Scattering on polar optical and acoustic phonons as well as impurities were taken into account. Behavior of BO was studied under different conditions such as intensity of electric field temperature and concentration of ionised impurities.","PeriodicalId":179900,"journal":{"name":"The Fourth International Conference on Advanced Semiconductor Devices and Microsystem","volume":"113 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117246756","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-12-16DOI: 10.1109/ASDAM.2002.1088475
V. Kulikov, Q. Hao, D. Donoval, V. Mirsky
A novel automated set-up for combinatorial formation of conductive polymer films and investigation of their electrical properties is outlined. The set-up provides controlled electropolymerization on platinum or gold electrodes and consists of a dosing station, an electronic block for control and measurement and an electrode array. Conditions of electropolymerizations and measurements can be programmed by user and they are automatically, executed. Polymer layers are created on a electrode array with 96 single interdigital electrodes specially designed for four-point measurements to exclude contact effects. The first results obtained for electropolymerization of aniline are presented.
{"title":"Set-up for combinatorial electrochemical synthesis and high-throughput investigation of organic semiconductor polymers for electronic devices","authors":"V. Kulikov, Q. Hao, D. Donoval, V. Mirsky","doi":"10.1109/ASDAM.2002.1088475","DOIUrl":"https://doi.org/10.1109/ASDAM.2002.1088475","url":null,"abstract":"A novel automated set-up for combinatorial formation of conductive polymer films and investigation of their electrical properties is outlined. The set-up provides controlled electropolymerization on platinum or gold electrodes and consists of a dosing station, an electronic block for control and measurement and an electrode array. Conditions of electropolymerizations and measurements can be programmed by user and they are automatically, executed. Polymer layers are created on a electrode array with 96 single interdigital electrodes specially designed for four-point measurements to exclude contact effects. The first results obtained for electropolymerization of aniline are presented.","PeriodicalId":179900,"journal":{"name":"The Fourth International Conference on Advanced Semiconductor Devices and Microsystem","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127462980","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-12-16DOI: 10.1109/ASDAM.2002.1088466
L. Cergel, L. Wetz, B. Keser, J. White
A new wafer level package has been designed and fabricated in which the entire package can be constructed at the wafer level using batch processing. Peripheral bondpads are redistributed from the die periphery to an area array using a redistribution metal of sputtered aluminum or electroplated copper and a redistribution dielectric. Redistribution of metal at the wafer level aids in eliminating the use of an interposer, or substrate. The redistributed bondpads are plated with the underbump metallurgy and then bumped using solder ball placement. The solder balls are reflowed onto the wafer creating a large standoff that improves reliability. This wafer level chip-scale package (WL-CSP) technology has been evaluated using a test vehicle, which has a 0.5 mm pitch of an 8/spl times/8 array of bumps on a 5/spl times/5 mm/sup 2/ die. The bump structure and package geometry have been optimized using simulation and validated by experimentation. The board used for reliability testing is a 1.2 mm thick, 2-layer FR-4 board with non-soldermask defined landpads with OSP. The landpads are the same diameter as the redistributed bondpads. Package and board level reliability data will be presented.
{"title":"Chip size packages with wafer-level ball attach and their reliability","authors":"L. Cergel, L. Wetz, B. Keser, J. White","doi":"10.1109/ASDAM.2002.1088466","DOIUrl":"https://doi.org/10.1109/ASDAM.2002.1088466","url":null,"abstract":"A new wafer level package has been designed and fabricated in which the entire package can be constructed at the wafer level using batch processing. Peripheral bondpads are redistributed from the die periphery to an area array using a redistribution metal of sputtered aluminum or electroplated copper and a redistribution dielectric. Redistribution of metal at the wafer level aids in eliminating the use of an interposer, or substrate. The redistributed bondpads are plated with the underbump metallurgy and then bumped using solder ball placement. The solder balls are reflowed onto the wafer creating a large standoff that improves reliability. This wafer level chip-scale package (WL-CSP) technology has been evaluated using a test vehicle, which has a 0.5 mm pitch of an 8/spl times/8 array of bumps on a 5/spl times/5 mm/sup 2/ die. The bump structure and package geometry have been optimized using simulation and validated by experimentation. The board used for reliability testing is a 1.2 mm thick, 2-layer FR-4 board with non-soldermask defined landpads with OSP. The landpads are the same diameter as the redistributed bondpads. Package and board level reliability data will be presented.","PeriodicalId":179900,"journal":{"name":"The Fourth International Conference on Advanced Semiconductor Devices and Microsystem","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131250543","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-12-16DOI: 10.1109/ASDAM.2002.1088539
F. Šrobár, O. Procházková
A modified method of the signal flow graphs is used to visualize the causal relationships in the thermionic model of current flow in the metal-semiconductor contact. A bias-dependent barrier and internal resistance are assumed. The representative diagram contains two branches connecting the input voltage vertex V with the output current vertex J and a feedback loop attached to the output vertex and connected with the vertex R of the internal resistance. The mathematical apparatus coming with the diagrammatic method is used to evaluate current-voltage characteristics and the so-called transmission functions of diagram lines, in particular of the ones assigned to the VJ edge and the loop, under various conditions. The transmission function of the loop is always negative (which excludes possibility of sigmoidal J-V characteristics) and its influence is significant only at the upper end of the physically admissible voltage region.
{"title":"Current-voltage characteristics of Schottky diodes: topology of relationships between relevant parameters","authors":"F. Šrobár, O. Procházková","doi":"10.1109/ASDAM.2002.1088539","DOIUrl":"https://doi.org/10.1109/ASDAM.2002.1088539","url":null,"abstract":"A modified method of the signal flow graphs is used to visualize the causal relationships in the thermionic model of current flow in the metal-semiconductor contact. A bias-dependent barrier and internal resistance are assumed. The representative diagram contains two branches connecting the input voltage vertex V with the output current vertex J and a feedback loop attached to the output vertex and connected with the vertex R of the internal resistance. The mathematical apparatus coming with the diagrammatic method is used to evaluate current-voltage characteristics and the so-called transmission functions of diagram lines, in particular of the ones assigned to the VJ edge and the loop, under various conditions. The transmission function of the loop is always negative (which excludes possibility of sigmoidal J-V characteristics) and its influence is significant only at the upper end of the physically admissible voltage region.","PeriodicalId":179900,"journal":{"name":"The Fourth International Conference on Advanced Semiconductor Devices and Microsystem","volume":"229 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122862684","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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