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Deep reactive ion etching of silicon using an aluminum etching mask 用铝蚀刻掩膜对硅进行深度反应离子蚀刻
Wei-Chih Wang, J. Ho, P. Reinhall
A method for fast and efficient deep etching of bulk silicon, using parallel capacitively coupled plasma is presented. The effects of the masking materials and RIE conditions are discussed. Based on the experimental results, a 1000 /spl Aring/ thick Al film sufficiently protects the unexposed substrate while allowing the etching of a 350 /spl mu/m deep hole with an area of 3/spl times/3mm/sup 2/ when etching with SF/sub 6//CHF/sub 3//O/sub 2/ plasma. A 2000 /spl mu/m long and 100 /spl mu/m wide (with layers of Al/SiO/sub 2//Si and thickness of 0.1/spl mu/m/2.2/spl mu/m/40/spl mu/m respectively) cantilever has been achieved. A silicon etch rate up to 2.5 to 2.8/spl mu/m/min has been obtained and an anisotropy of A = 0.5 (A=I-V/H, where V=horizontal undercut, H=etch depth) has been obtained. The technique was developed mainly for bulk micromachining of silicon or composite silicon cantilever structures.
提出了一种利用并联电容耦合等离子体快速高效刻蚀大块硅的方法。讨论了掩蔽材料和RIE条件的影响。实验结果表明,当采用SF/sub / 6//CHF/sub /3 //O/sub / 2/等离子体刻蚀时,厚度为1000 /spl / Aring/厚的Al膜可以充分保护未暴露的衬底,同时可以刻蚀出面积为3/spl倍/3mm/sup /的350 /spl μ /m深孔。长2000 /spl亩/米,宽100 /spl亩/米(层数分别为Al/SiO/ sub2 //Si,厚度分别为0.1/spl亩/米/2.2/spl亩/米/40/spl亩/米)。获得了高达2.5至2.8/spl mu/m/min的硅蚀刻速率,并获得了A= 0.5 (A=I-V/H,其中V=水平凹边,H=蚀刻深度)的各向异性。该技术主要用于硅或复合硅悬臂结构的体微加工。
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引用次数: 8
Modelling of the photodiode in various microwave applications 光电二极管在各种微波应用中的建模
A. Chizh, S. Malyshev
The general model of the microwave photodiode based on the harmonic balance method is represented. The application of this model for modelling of the photodiode used in microwave circuits for optical signal detection, optical control and mixing is shown.
给出了基于谐波平衡法的微波光电二极管的一般模型。本文给出了该模型在微波电路中用于光信号检测、光控制和混频的光电二极管建模中的应用。
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引用次数: 2
Macromodeling of fluidic damping effects in microdevices 微器件中流体阻尼效应的宏观建模
G. Wachutka, G. Schrag, R. Sattler
The operation of many mechatronical microdevices is significantly affected by viscous fluid damping effects. We present a methodology how these effects can be properly included in physically based microdevice and full system models for the effort-economizing and yet accurate predictive simulation of the operation of micro-mechatronical systems. The usability and quality of the approach is demonstrated by computational results for highly perforated microdevices.
粘性流体阻尼效应对许多机电微器件的工作有重要影响。我们提出了一种方法,如何将这些影响适当地包括在基于物理的微设备和完整系统模型中,以节省精力,并准确地预测微机电系统的运行模拟。高穿孔微器件的计算结果证明了该方法的可用性和质量。
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引用次数: 0
PECVD nitrogen doped a-SiC:H films: properties PECVD氮掺杂a-SiC:H薄膜:性能
J. Huran, I. Hotovy, A. Kobzev, N. Balalykin
We present properties of nitrogen-doped amorphous silicon carbide films grown by PECVD and annealed by a pulsed electron beam. Samples with different amounts of N were achieved by a small addition of ammonia NH/sub 3/ into the gas mixture of silane SiH/sub 4/ and methane CH/sub 4/, which were directly introduced into the reaction chamber. A simulation of the RBS spectra was used to calculate the concentration of carbon, silicon and nitrogen. The current-voltage (I-V) characteristics of diodes made of doped and irradiated SiC films grown on silicon substrates were studied.
研究了用PECVD法生长并经脉冲电子束退火的氮掺杂非晶碳化硅薄膜的性能。在硅烷SiH/ sub4 /和甲烷CH/ sub4 /的混合气中加入少量氨nhh / sub3 /,将其直接引入反应室,得到不同N量的样品。利用RBS光谱模拟计算了碳、硅和氮的浓度。研究了在硅衬底上生长的掺杂和辐照SiC薄膜制成的二极管的电流-电压特性。
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引用次数: 1
Optical properties investigations of organic Alq/sub 3/ layers doped by DCM DCM掺杂有机Alq/ sub3 /层的光学性质研究
J. Jakabovic, T. Wong, O. Lengyel, J. Kováč, C. Lee, S. Lee
We present the study of optical emission properties carried out on Alq/sub 3/ organic solutions and evaporated films prepared by doping with dye molecules of DCM. The maxima of spontaneous emission spectral characteristics of Alq/sub 3/:DCM films measured by photo- and electroluminescence shifts towards the higher wavelengths from 608 - 660 nm with simultaneous decrease in spectral intensities within the investigated DCM doping concentration range of 0.9 11%, respectively. The maximum emission intensity was observed at DCM doping concentration around 1% causing peak emission near 628 nm by optical pumping. Optically excited amplified spontaneous emission and laser spectrum showing evenly spaced resonant cavity modes with preferential emission peak at 621.4 nm have been measured on waveguide structures prepared onto GaAs substrate.
本文对掺杂DCM染料分子制备的Alq/ sub3 /有机溶液和蒸发膜的光学发射特性进行了研究。在DCM掺杂浓度范围内,光致发光和电致发光测量的Alq/sub 3/:DCM薄膜自发发射光谱特性的最大值从608 ~ 660 nm向更高波长偏移,光谱强度同时降低了0.9 11%。在DCM掺杂浓度为1%左右时,光泵浦光致发光强度最大,在628 nm附近出现峰值。在GaAs衬底上制备的波导结构上测量了光激发放大自发发射和激光光谱,显示出均匀间隔的谐振腔模式,优先发射峰在621.4 nm处。
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引用次数: 1
A 0.35/spl mu/m CMOS linear differential amplifier independent of threshold voltage 一种不受阈值电压影响的0.35/spl mu/m CMOS线性差分放大器
C. Popa
The differential amplifier presented in this paper is based on the principle of the constant sum of the gate-source voltages, which assures, in a first-order analysis, the linearization of the circuit. The new idea is to cancel the nonlinearities introduced by the second-order effects such as short channel effect, mobility degradation and bulk effect by using a parallel connection of two complementary excited differential stages. The circuit is implemented in 0.35 /spl mu/m CMOS technology on a die area of 20 /spl mu//35 /spl mu/. The SPICE simulation using BSIM3v3 model and based on the mentioned technology parameters validates the estimated theoretical results about the linearity (a linearity error of 0.5% for an extended input range of 1 V).
本文提出的差分放大器是基于门源电压的恒和原理,保证了在一阶分析中电路的线性化。新的思路是利用两个互补的激励微分级并联来消除由短通道效应、迁移率退化和体积效应等二阶效应引入的非线性。电路采用0.35 /spl mu/m CMOS技术,在20 /spl mu//35 /spl mu/的芯片面积上实现。基于BSIM3v3模型和上述技术参数的SPICE仿真验证了线性度的估计理论结果(扩展输入范围为1 V时线性度误差为0.5%)。
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引用次数: 0
Terahertz Bloch oscillations in semiconductor superlattices 半导体超晶格中的太赫兹布洛赫振荡
H. Moravcová, J. Voves
Bloch Oscillations (BO) in AlGaAs/GaAs superlattices were studied by Monte Carlo method. A two-dimensional model based on the effective mass approximation was used for studying electron miniband transport. Scattering on polar optical and acoustic phonons as well as impurities were taken into account. Behavior of BO was studied under different conditions such as intensity of electric field temperature and concentration of ionised impurities.
用蒙特卡罗方法研究了AlGaAs/GaAs超晶格中的布洛赫振荡(BO)。采用基于有效质量近似的二维模型研究了电子微带输运。考虑了极性声子和光学声子的散射以及杂质。研究了BO在电场强度、温度和离子杂质浓度等不同条件下的行为。
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引用次数: 0
Set-up for combinatorial electrochemical synthesis and high-throughput investigation of organic semiconductor polymers for electronic devices 电子器件用有机半导体聚合物的组合电化学合成及高通量研究
V. Kulikov, Q. Hao, D. Donoval, V. Mirsky
A novel automated set-up for combinatorial formation of conductive polymer films and investigation of their electrical properties is outlined. The set-up provides controlled electropolymerization on platinum or gold electrodes and consists of a dosing station, an electronic block for control and measurement and an electrode array. Conditions of electropolymerizations and measurements can be programmed by user and they are automatically, executed. Polymer layers are created on a electrode array with 96 single interdigital electrodes specially designed for four-point measurements to exclude contact effects. The first results obtained for electropolymerization of aniline are presented.
概述了一种新型的用于组合形成导电聚合物薄膜和研究其电性能的自动化装置。该装置在铂或金电极上提供可控的电聚合,由一个加药站、一个用于控制和测量的电子块和一个电极阵列组成。电聚合和测量的条件可以由用户编程并自动执行。聚合物层是在96个单数字间电极的电极阵列上创建的,专为四点测量而设计,以排除接触效应。介绍了苯胺电聚合的初步结果。
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引用次数: 1
Chip size packages with wafer-level ball attach and their reliability 芯片尺寸封装与晶圆级球附加及其可靠性
L. Cergel, L. Wetz, B. Keser, J. White
A new wafer level package has been designed and fabricated in which the entire package can be constructed at the wafer level using batch processing. Peripheral bondpads are redistributed from the die periphery to an area array using a redistribution metal of sputtered aluminum or electroplated copper and a redistribution dielectric. Redistribution of metal at the wafer level aids in eliminating the use of an interposer, or substrate. The redistributed bondpads are plated with the underbump metallurgy and then bumped using solder ball placement. The solder balls are reflowed onto the wafer creating a large standoff that improves reliability. This wafer level chip-scale package (WL-CSP) technology has been evaluated using a test vehicle, which has a 0.5 mm pitch of an 8/spl times/8 array of bumps on a 5/spl times/5 mm/sup 2/ die. The bump structure and package geometry have been optimized using simulation and validated by experimentation. The board used for reliability testing is a 1.2 mm thick, 2-layer FR-4 board with non-soldermask defined landpads with OSP. The landpads are the same diameter as the redistributed bondpads. Package and board level reliability data will be presented.
设计和制造了一种新的晶圆级封装,其中整个封装可以在晶圆级使用批量处理构造。外围键垫使用溅射铝或电镀铜的再分布金属和再分布电介质从模具外围重新分布到区域阵列。在晶圆级重新分配金属有助于消除中间介质或衬底的使用。重新分布的键垫用下凸冶金镀,然后用焊料球放置凸。焊料球回流到晶圆上,形成一个较大的距离,提高了可靠性。这种晶圆级芯片级封装(WL-CSP)技术已经使用测试车辆进行了评估,该测试车辆在5/spl倍/5毫米/sup 2/芯片上具有0.5毫米间距的8/spl倍/8凸点阵列。通过仿真和实验对凸点结构和封装几何形状进行了优化。用于可靠性测试的电路板是1.2 mm厚的2层FR-4板,具有非焊阻定义的带OSP的地台板。陆坪与重新分布的陆坪直径相同。将介绍封装和板级可靠性数据。
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引用次数: 9
Current-voltage characteristics of Schottky diodes: topology of relationships between relevant parameters 肖特基二极管的电流-电压特性:相关参数之间关系的拓扑结构
F. Šrobár, O. Procházková
A modified method of the signal flow graphs is used to visualize the causal relationships in the thermionic model of current flow in the metal-semiconductor contact. A bias-dependent barrier and internal resistance are assumed. The representative diagram contains two branches connecting the input voltage vertex V with the output current vertex J and a feedback loop attached to the output vertex and connected with the vertex R of the internal resistance. The mathematical apparatus coming with the diagrammatic method is used to evaluate current-voltage characteristics and the so-called transmission functions of diagram lines, in particular of the ones assigned to the VJ edge and the loop, under various conditions. The transmission function of the loop is always negative (which excludes possibility of sigmoidal J-V characteristics) and its influence is significant only at the upper end of the physically admissible voltage region.
在金属-半导体接触电流的热离子模型中,采用了一种改进的信号流图方法来直观地表示电流的因果关系。假设存在与偏置相关的屏障和内阻。代表性图包含两个支路连接输入电压顶点V和输出电流顶点J,一个反馈回路附在输出顶点上并与内阻顶点R连接。随图解法而来的数学装置用于评估各种条件下的电流-电压特性和所谓的图解线的传输函数,特别是分配给VJ边缘和环路的传输函数。该回路的传输函数始终为负(排除了s型J-V特性的可能性),其影响仅在物理允许电压区域的上端才显著。
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The Fourth International Conference on Advanced Semiconductor Devices and Microsystem
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