Light-Science & Applications最新文献

Multi-resonance thermally activated delayed fluorescence (MR-TADF) materials are promising candidates for organic light-emitting diodes (OLEDs) with narrow electroluminescence (EL) spectra. Current researches focus on fabricating hyperfluorescence OLEDs to improve EL efficiencies of MR-TADF emitters by co-doping them with TADF sensitizers in a single host layer. However, in many cases, the polarity of the single host could be not suitable for both blue MR-TADF emitters and blue TADF sensitizers, resulting in broadened EL spectra in high-polar hosts or decreased EL efficiencies in low-polar hosts. Herein, we wish to report an efficient sensitization strategy for blue MR-TADF emitters by constructing an interlayer-sensitizing configuration, in which the blue TADF sensitizers and blue MR-TADF emitters are separated into two closely aligned host layers with high polarity and low polarity, respectively. Based on this strategy, efficient blue hyperfluorescence OLEDs are realized and verified by employing various TADF sensitizers and different MR-TADF emitters, furnishing outstanding external quantum efficiencies of up to 38.8% and narrow EL spectra. These results validate the feasibility and universality of this interlayer sensitization strategy, which provides an effective alternative to high-performance blue hyperfluorescence OLEDs.

Light-emitting diodes (LEDs) based on perovskite semiconductor materials with tunable emission wavelength in visible light range as well as narrow linewidth are potential competitors among current light-emitting display technologies, but still suffer from severe instability driven by electric field. Here, we develop a stable, efficient and high-color purity hybrid LED with a tandem structure by combining the perovskite LED and the commercial organic LED technologies to accelerate the practical application of perovskites. Perovskite LED and organic LED with close photoluminescence peak are selected to maximize photon emission without photon reabsorption and to achieve the narrowed emission spectra. By designing an efficient interconnecting layer with p-type interface doping that provides good opto-electric coupling and reduces Joule heating, the resulting green emitting hybrid LED shows a narrow linewidth of around 30 nm, a peak luminance of over 176,000 cd m⁻², a maximum external quantum efficiency of over 40%, and an operational half-lifetime of over 42,000 h.

New measurements combine spatial and temporal information from optical transition radiation to estimate the three-dimensional structure of electron bunches from a laser wakefield accelerator.

MINFLUX has achieved extraordinary resolution in superresolution imaging and single fluorophore tracking. It is based on localizing single fluorophores by rapid probing with a patterned beam that features a local intensity minimum. Current implementations, however, are complex and expensive and are limited in speed and robustness. Here, we show that a combination of an electro-optical modulator with a segmented birefringent element such as a spatial light modulator produces a variable phase plate for which the phase can be scanned on the MHz timescale. Bisected or top-hat phase patterns generate high-contrast compact excitation point-spread functions for MINFLUX localization in the x, y, and z-direction, respectively, which can be scanned across a fluorophore within a microsecond, switched within 60 microseconds and alternated among different excitation wavelengths. We discuss how to compensate for non-optimal performance of the components and present a robust 3D and multi-color MINFLUX excitation module, which we envision as an integral component of a high-performance and cost-effective open-source MINFLUX.

Optical holography is a promising technique to achieve a naked-eye 3D display. However, the narrow viewing angle and chromatic aberration are the two key issues that usually limit the holographic display performance. A recent work proposes a novel way to circumvent these constraints by introducing a color liquid crystal grating into a time-sequenced holography system.

Efficient charge-carrier injection and transport in organic light-emitting devices (OLEDs) are essential to simultaneously achieving their high efficiency and long-term stability. However, the charge-transporting layers (CTLs) deposited by various vapor or solution processes are usually in amorphous forms, and their low charge-carrier mobilities, defect-induced high trap densities and inhomogeneous thickness with rough surface morphologies have been obstacles towards high-performance devices. Here, organic single-crystalline (SC) films were employed as the hole-transporting layers (HTLs) instead of the conventional amorphous films to fabricate highly efficient and stable OLEDs. The high-mobility and ultrasmooth morphology of the SC-HTLs facilitate superior interfacial characteristics of both HTL/electrode and HTL/emissive layer interfaces, resulting in a high Haacke’s figure of merit (FoM) of the ultrathin top electrode and low series-resistance joule-heat loss ratio of the SC-OLEDs. Moreover, the thick and compact SC-HTL can function as a barrier layer against moisture and oxygen permeation. As a result, the SC-OLEDs show much improved efficiency and stability compared to the OLEDs based on amorphous or polycrystalline HTLs, suggesting a new strategy to developing advanced OLEDs with high efficiency and high stability.

Superconductor-semiconductor hybrid devices can bridge the gap between solid-state-based and photonics-based quantum systems, enabling new hybrid computing schemes, offering increased scalability and robustness. One example for a hybrid device is the superconducting light-emitting diode (SLED). SLEDs have been theoretically shown to emit polarization-entangled photon pairs by utilizing radiative recombination of Cooper pairs. However, the two-photon nature of the emission has not been shown experimentally before. We demonstrate two-photon emission in a GaAs/AlGaAs SLED. Measured electroluminescence spectra reveal unique two-photon superconducting features below the critical temperature (T_c), while temperature-dependent photon-pair correlation experiments (g⁽²⁾(τ,T)) demonstrate temperature-dependent time coincidences below T_c between photons emitted from the SLED. Our results pave the way for compact and efficient superconducting quantum light sources and open new directions in light-matter interaction studies.

Optical information transmission is vital in modern optics and photonics due to its concurrent and multi-dimensional nature, leading to tremendous applications such as optical microscopy, holography, and optical sensing. Conventional optical information transmission technologies suffer from bulky optical setup and information loss/crosstalk when meeting scatterers or obstacles in the light path. Here, we theoretically propose and experimentally realize the simultaneous manipulation of the coherence lengths and coherence structures of the light beams with the disordered metasurfaces. The ultra-robust optical information transmission and self-reconstruction can be realized by the generated partially coherent beam with modulated coherence structure even 93% of light is recklessly obstructed during light transmission, which brings new light to robust optical information transmission with a single metasurface. Our method provides a generic principle for the generalized coherence manipulation on the photonic platform and displays a variety of functionalities advancing capabilities in optical information transmission such as meta-holography and imaging in disordered and perturbative media.

Three-dimensional (3D) glass chips are promising waveguide platforms for building hybrid 3D photonic circuits due to their 3D topological capabilities, large transparent windows, and low coupling dispersion. At present, the key challenge in scaling down a benchtop optical system to a glass chip is the lack of precise methods for controlling the mode field and optical coupling of 3D waveguide circuits. Here, we propose an overlap-controlled multi-scan (OCMS) method based on laser-direct lithography that allows customizing the refractive index profile of 3D waveguides with high spatial precision in a variety of glasses. On the basis of this method, we achieve variable mode-field distribution, robust and broadband coupling, and thereby demonstrate dispersionless LP₂₁-mode conversion of supercontinuum pulses with the largest deviation of <0.1 dB in coupling ratios on 210 nm broadband. This approach provides a route to achieve ultra-broadband and low-dispersion coupling in 3D photonic circuits, with overwhelming advantages over conventional planar waveguide-optic platforms for on-chip transmission and manipulation of ultrashort laser pulses and broadband supercontinuum.

The construction of lateral p-n junctions is very important and challenging in two-dimensional (2D) semiconductor manufacturing process. Previous researches have demonstrated that vertical p-n junction can be prepared simply by vertical stacking of 2D materials. However, interface pollution and large area scalability are challenges that are difficult to overcome with vertical stacking technology. Constructing 2D lateral p-n homojunction is an effective strategy to address these issues. Spatially selective p-type doping of 2D semiconductors is expected to construct lateral p-n homojunction. In this work, we have developed a low-energy ion implantation system that reduces the implanted energy to 300 eV. Low-energy implantation can form a shallow implantation depth, which is more suitable for modulating the electrical and optical properties of 2D materials. Hence, we utilize low-energy ion implantation to directly dope nitrogen ions into few-layer WS₂ and successfully realize a precise regulation for WS₂ with its conductivity type transforming from n-type to bipolar or even p-type conduction. Furthermore, the universality of this method is demonstrated by extending it to other 2D semiconductors, including WSe₂, SnS₂ and MoS₂. Based on this method, a lateral WS₂ p-n homojunction is fabricated, which exhibits significant rectification characteristics. A photodetector based on p-n junction with photovoltaic effect is also prepared, and the open circuit voltage can reach to 0.39 V. This work provides an effective way for controllable doping of 2D semiconductors.