Si-based nanomaterials are a promising platform for nonlinear optics due to the central crystal symmetry breaking at the nanoscale. In this work, we studied the second harmonic generation (SHG) in spherical mesoporous nanocrystalline Si/SiO2 nanoparticles deposited on a gold substrate, combining experimental measurements and numerical simulations. The performed theoretical analysis showed that SHG signal related to Si crystallites is dominant in nonlinear response from Si/SiO2 nanoparticles. Our investigation revealed that Mie resonances in the mesoporous nanoparticles and their interaction with the gold substrate influence SHG efficiency. Moreover we observed additional enhancing of SHG efficiency at specific wavelengths, caused by constructive interference between resonances of the different orders. Experimentally measured SHG spectra for mesoporous nanoparticles matched well with results of our calculations. These findings demonstrate the potential of mesoporous nanocrystalline Si/SiO2 nanoparticles as efficient tunable frequency converters for nonlinear optical applications.
{"title":"Enhanced second harmonic generation from single spherical mesoporous Si/SiO2 nanoparticles on gold","authors":"A.S. Funtikova , V.A. Sharov , L.N. Dvoretckaia , K.N. Novikova , D.A. Eurov , E. Yu Stovpiaga , D.A. Kurdyukov , A.V. Aybush , A.V. Koroleva , E.V. Zhizhin , V.V. Fedorov , D.V. Miniv , A.M. Mozharov , I.S. Mukhin","doi":"10.1016/j.mssp.2025.110328","DOIUrl":"10.1016/j.mssp.2025.110328","url":null,"abstract":"<div><div>Si-based nanomaterials are a promising platform for nonlinear optics due to the central crystal symmetry breaking at the nanoscale. In this work, we studied the second harmonic generation (SHG) in spherical mesoporous nanocrystalline Si/SiO<sub>2</sub> nanoparticles deposited on a gold substrate, combining experimental measurements and numerical simulations. The performed theoretical analysis showed that SHG signal related to Si crystallites is dominant in nonlinear response from Si/SiO<sub>2</sub> nanoparticles. Our investigation revealed that Mie resonances in the mesoporous nanoparticles and their interaction with the gold substrate influence SHG efficiency. Moreover we observed additional enhancing of SHG efficiency at specific wavelengths, caused by constructive interference between resonances of the different orders. Experimentally measured SHG spectra for mesoporous nanoparticles matched well with results of our calculations. These findings demonstrate the potential of mesoporous nanocrystalline Si/SiO<sub>2</sub> nanoparticles as efficient tunable frequency converters for nonlinear optical applications.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"204 ","pages":"Article 110328"},"PeriodicalIF":4.6,"publicationDate":"2025-12-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145733106","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-12-06DOI: 10.1016/j.mssp.2025.110326
Kai Li , Haohua Li , Guozhi Yan , Canping Fan , Shahid Hussain , Mohammed Mujahid Alam , Mohamed Hussien , Nikita Morozov , Rajesh Kumar Manavalan , Guanjun Qiao , Guiwu Liu
The highly sensitive and selective detection of hydrogen sulfide (H2S) remains critical in gas sensing. Addressing this need, we report the fabrication of a high-performance semiconductor gas sensor based on ordered mesoporous MoO3 for trace H2S detection. The sensor was synthesized via a nanocasting approach using mesoporous KIT-6 as a hard template, whereby the ordered mesoporous architecture imparts unique physicochemical properties to MoO3, establishing a robust foundation for efficient gas-sensing performance. The H2S-sensing performance of the mesoporous MoO3 sensor was systematically evaluated, and its sensing mechanism was deeply analyzed. Experimental results demonstrate that the sensor exhibits excellent sensing responses, capable of detecting as low as 10 ppm of H2S with high selectivity toward H2S, effectively excluding interference from other gases. The synergistic effect of the high specific surface area and ordered mesoporous structure significantly enhances the adsorption capacity and reaction activity of the sensor toward H2S, thereby greatly improving its sensing performance. Collectively, the ordered mesoporous MoO3 sensor reported herein showcases exceptional performance for trace H2S detection, positioning it as a promising and reliable material for practical applications in environmental monitoring, industrial safety, and beyond. This work paves the way for the development of next-generation metal oxide-based gas sensors with enhanced sensitivity and selectivity.
{"title":"Three-dimensional ordered mesoporous MoO3 nanomaterials for hydrogen sulfide detection","authors":"Kai Li , Haohua Li , Guozhi Yan , Canping Fan , Shahid Hussain , Mohammed Mujahid Alam , Mohamed Hussien , Nikita Morozov , Rajesh Kumar Manavalan , Guanjun Qiao , Guiwu Liu","doi":"10.1016/j.mssp.2025.110326","DOIUrl":"10.1016/j.mssp.2025.110326","url":null,"abstract":"<div><div>The highly sensitive and selective detection of hydrogen sulfide (H<sub>2</sub>S) remains critical in gas sensing. Addressing this need, we report the fabrication of a high-performance semiconductor gas sensor based on ordered mesoporous MoO<sub>3</sub> for trace H<sub>2</sub>S detection. The sensor was synthesized via a nanocasting approach using mesoporous KIT-6 as a hard template, whereby the ordered mesoporous architecture imparts unique physicochemical properties to MoO<sub>3</sub>, establishing a robust foundation for efficient gas-sensing performance. The H<sub>2</sub>S-sensing performance of the mesoporous MoO<sub>3</sub> sensor was systematically evaluated, and its sensing mechanism was deeply analyzed. Experimental results demonstrate that the sensor exhibits excellent sensing responses, capable of detecting as low as 10 ppm of H<sub>2</sub>S with high selectivity toward H<sub>2</sub>S, effectively excluding interference from other gases. The synergistic effect of the high specific surface area and ordered mesoporous structure significantly enhances the adsorption capacity and reaction activity of the sensor toward H<sub>2</sub>S, thereby greatly improving its sensing performance. Collectively, the ordered mesoporous MoO<sub>3</sub> sensor reported herein showcases exceptional performance for trace H<sub>2</sub>S detection, positioning it as a promising and reliable material for practical applications in environmental monitoring, industrial safety, and beyond. This work paves the way for the development of next-generation metal oxide-based gas sensors with enhanced sensitivity and selectivity.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"204 ","pages":"Article 110326"},"PeriodicalIF":4.6,"publicationDate":"2025-12-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145681879","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-12-05DOI: 10.1016/j.mssp.2025.110325
Meng Zhao , Tianbao Zhao , Tao Cheng , Zihan Su , Jiayi Zheng , Zhiming Liu , Linhua Liu , Jia-Yue Yang
The quest for biomimetic materials that emulate the solar spectral response of green plants has garnered substantial attention. Herein, we combined density-functional theory with on-site Coulomb corrections and spectroscopic ellipsometry to obtain the complex dielectric functions of chromium oxide (Cr2O3) pigment and polyurethane (PU) binder, respectively. Based on the Lorenz-Mie scattering theory and two-flux method considering anisotropic scattering, we systematically studied the regulatory mechanism of particle structural parameters on the reflectance spectrum of the biomimetic coating. The results show that optimizing the structural parameters of Cr2O3 particles reproduces the canonical vegetation features in the visible-near-infrared region. Coating reflectance decreases monotonically with both increasing particle volume fraction and larger mean radius. Additionally, the slope of red edge can be independently tuned by the particle size distribution, i.e. a larger proportion of small particles steepens the red-edge slope. This study provides a theoretical basis and data support for further optimizing the similarity between biomimetic coatings and natural vegetation in terms of their hyperspectral images in the visible-near infrared spectral range.
{"title":"Visible-near-infrared reflectance spectra of Cr2O3-based biomimetic leaves: A combined spectroscopic ellipsometry and first-principles study","authors":"Meng Zhao , Tianbao Zhao , Tao Cheng , Zihan Su , Jiayi Zheng , Zhiming Liu , Linhua Liu , Jia-Yue Yang","doi":"10.1016/j.mssp.2025.110325","DOIUrl":"10.1016/j.mssp.2025.110325","url":null,"abstract":"<div><div>The quest for biomimetic materials that emulate the solar spectral response of green plants has garnered substantial attention. Herein, we combined density-functional theory with on-site Coulomb corrections and spectroscopic ellipsometry to obtain the complex dielectric functions of chromium oxide (Cr<sub>2</sub>O<sub>3</sub>) pigment and polyurethane (PU) binder, respectively. Based on the Lorenz-Mie scattering theory and two-flux method considering anisotropic scattering, we systematically studied the regulatory mechanism of particle structural parameters on the reflectance spectrum of the biomimetic coating. The results show that optimizing the structural parameters of Cr<sub>2</sub>O<sub>3</sub> particles reproduces the canonical vegetation features in the visible-near-infrared region. Coating reflectance decreases monotonically with both increasing particle volume fraction and larger mean radius. Additionally, the slope of red edge can be independently tuned by the particle size distribution, i.e. a larger proportion of small particles steepens the red-edge slope. This study provides a theoretical basis and data support for further optimizing the similarity between biomimetic coatings and natural vegetation in terms of their hyperspectral images in the visible-near infrared spectral range.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"204 ","pages":"Article 110325"},"PeriodicalIF":4.6,"publicationDate":"2025-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145681880","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-12-04DOI: 10.1016/j.mssp.2025.110324
S.N. Zhang , J. Ren , Y. Wu , M.L. Huang
Full textured η-Cu6Sn5 intermetallic compound (IMC) interconnects exhibiting a (11 0) preferred orientation were rapidly fabricated using the Current Direct Bonding (CDB) method with (111)-oriented nanotwinned Cu (nt-Cu) serving as the under bump metallization (UBM). Synchrotron radiography in situ revealed the nucleation and growth kinetics of η-Cu6Sn5 IMC grains. During the initial wetting stage, the (111) nt-Cu substrate functioned as a templating seed layer, promoting the heterogeneous nucleation of roof-type η-Cu6Sn5 grains with (11 0) orientation. Subsequent application of current stressing (1.0 × 104 A/cm2, 300 ± 5 °C), provided an additional energy influx that sustained the preferred orientation and accelerated the growth of (11 0)-textured η-Cu6Sn5 grains. The resulting full textured IMC interconnects with (11 0) orientation exhibited an average shear strength of 58.4 MPa. This study demonstrated a scalable approach for the rapid fabrication of high-melting-point, highly-textured η-Cu6Sn5 IMC interconnects utilizing cost-effective nt-Cu UBM, thereby supporting advances in 3D packaging technology.
{"title":"Fabrication of full preferentially oriented intermetallic compound interconnects using (111) nanotwinned Cu under bump metallization","authors":"S.N. Zhang , J. Ren , Y. Wu , M.L. Huang","doi":"10.1016/j.mssp.2025.110324","DOIUrl":"10.1016/j.mssp.2025.110324","url":null,"abstract":"<div><div>Full textured η-Cu<sub>6</sub>Sn<sub>5</sub> intermetallic compound (IMC) interconnects exhibiting a (11 <span><math><mrow><mover><mn>2</mn><mo>‾</mo></mover></mrow></math></span> 0) preferred orientation were rapidly fabricated using the Current Direct Bonding (CDB) method with (111)-oriented nanotwinned Cu (nt-Cu) serving as the under bump metallization (UBM). Synchrotron radiography <em>in situ</em> revealed the nucleation and growth kinetics of η-Cu<sub>6</sub>Sn<sub>5</sub> IMC grains. During the initial wetting stage, the (111) nt-Cu substrate functioned as a templating seed layer, promoting the heterogeneous nucleation of roof-type η-Cu<sub>6</sub>Sn<sub>5</sub> grains with (11 <span><math><mrow><mover><mn>2</mn><mo>‾</mo></mover></mrow></math></span> 0) orientation. Subsequent application of current stressing (1.0 × 10<sup>4</sup> A/cm<sup>2</sup>, 300 ± 5 °C), provided an additional energy influx that sustained the preferred orientation and accelerated the growth of (11 <span><math><mrow><mover><mn>2</mn><mo>‾</mo></mover></mrow></math></span> 0)-textured η-Cu<sub>6</sub>Sn<sub>5</sub> grains. The resulting full textured IMC interconnects with (11 <span><math><mrow><mover><mn>2</mn><mo>‾</mo></mover></mrow></math></span> 0) orientation exhibited an average shear strength of 58.4 MPa. This study demonstrated a scalable approach for the rapid fabrication of high-melting-point, highly-textured η-Cu<sub>6</sub>Sn<sub>5</sub> IMC interconnects utilizing cost-effective nt-Cu UBM, thereby supporting advances in 3D packaging technology.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"204 ","pages":"Article 110324"},"PeriodicalIF":4.6,"publicationDate":"2025-12-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145681829","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-12-04DOI: 10.1016/j.mssp.2025.110312
Pengcheng Jiang, Mengran Ge, Quanjing Wang, Ru Zhang, Yao Liu, Zhidong Liu
Sapphire is widely utilized in the semiconductor market. Owing to its extremely high hardness, fixed-abrasive diamond wire saws have currently become the primary method for cutting sapphire and other brittle-hard materials. However, the dynamic evolution laws of sawing force and bow angle during the cutting process remain unclear, and there is a lack of systematic analysis on the bow angle in the machining of cylindrical sapphire workpieces. This issue directly affects slicing quality and processing efficiency, thus making it urgent to establish an accurate model to reveal their intrinsic correlation. In this study, by analyzing the diamond wire saw system for sapphire cutting, a sawing simulation model of the wire saw was developed, and a shape correction coefficient induced by the morphology of abrasive grains (β ~ 1.38) was calculated. The machining process was simulated using an iterative simulation method, and experiments were conducted to verify the rationality of the model. The results confirmed the effectiveness of the proposed model: the error between the simulated and experimental variations of sawing force is less than 9 %, the simulation error of the bow angle is less than 7 %, and the variation rate of the bow angle is approximately 5 % slower than that of the sawing force. Finally, under the validation of experiments, the variation laws of the bow angle and sawing force with wire running speed, feed speed, and pre-tension during the machining process were predicted.
{"title":"A study on the evolution of sawing force and bow angle in diamond wire sawing of sapphire","authors":"Pengcheng Jiang, Mengran Ge, Quanjing Wang, Ru Zhang, Yao Liu, Zhidong Liu","doi":"10.1016/j.mssp.2025.110312","DOIUrl":"10.1016/j.mssp.2025.110312","url":null,"abstract":"<div><div>Sapphire is widely utilized in the semiconductor market. Owing to its extremely high hardness, fixed-abrasive diamond wire saws have currently become the primary method for cutting sapphire and other brittle-hard materials. However, the dynamic evolution laws of sawing force and bow angle during the cutting process remain unclear, and there is a lack of systematic analysis on the bow angle in the machining of cylindrical sapphire workpieces. This issue directly affects slicing quality and processing efficiency, thus making it urgent to establish an accurate model to reveal their intrinsic correlation. In this study, by analyzing the diamond wire saw system for sapphire cutting, a sawing simulation model of the wire saw was developed, and a shape correction coefficient induced by the morphology of abrasive grains (β ~ 1.38) was calculated. The machining process was simulated using an iterative simulation method, and experiments were conducted to verify the rationality of the model. The results confirmed the effectiveness of the proposed model: the error between the simulated and experimental variations of sawing force is less than 9 %, the simulation error of the bow angle is less than 7 %, and the variation rate of the bow angle is approximately 5 % slower than that of the sawing force. Finally, under the validation of experiments, the variation laws of the bow angle and sawing force with wire running speed, feed speed, and pre-tension during the machining process were predicted.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"204 ","pages":"Article 110312"},"PeriodicalIF":4.6,"publicationDate":"2025-12-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145681830","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-12-03DOI: 10.1016/j.mssp.2025.110320
Woojin Park , Ojun Kwon , Kyungmin Lee , Seyoung Oh , Tae Jin Yoo , Yongsu Lee , Chang Goo Kang , Byungjin Cho
Exposure to cosmic rays leads to partial degradation of the electronic devices. This study tested the resilience of bare indium-gallium-zinc-oxide synaptic transistors under 33 MeV high-energy proton irradiation. In the transistors tested, clear differences were observed before and after high-energy proton irradiation. The drive current was reduced by 10–30 %, showing degradation with high-energy radioactive irradiation in the drain-to-source current–gate-to-source voltage (IDS–VGS) transfer characteristics. Despite the structural damage, the transistor still exhibited reasonable switching behavior. To understand the effects of irradiation on the contact junction, the series resistance (RSD) was calculated; RSD increased from 361 to 546 kΩ. Potentiation and depression were measured for evaluating the performance of the neuromorphic device application. The plasticity synaptic current change (ΔPSC) was 37.7 and 22.8 nA before and after proton irradiation. When measuring the current values of the reservoir computing (RC) states, clear differences in states were observed post-proton irradiation.
{"title":"High-energy proton-radiation tolerance in IGZO synaptic transistors","authors":"Woojin Park , Ojun Kwon , Kyungmin Lee , Seyoung Oh , Tae Jin Yoo , Yongsu Lee , Chang Goo Kang , Byungjin Cho","doi":"10.1016/j.mssp.2025.110320","DOIUrl":"10.1016/j.mssp.2025.110320","url":null,"abstract":"<div><div>Exposure to cosmic rays leads to partial degradation of the electronic devices. This study tested the resilience of bare indium-gallium-zinc-oxide synaptic transistors under 33 MeV high-energy proton irradiation. In the transistors tested, clear differences were observed before and after high-energy proton irradiation. The drive current was reduced by 10–30 %, showing degradation with high-energy radioactive irradiation in the drain-to-source current–gate-to-source voltage (I<sub>DS</sub>–V<sub>GS</sub>) transfer characteristics. Despite the structural damage, the transistor still exhibited reasonable switching behavior. To understand the effects of irradiation on the contact junction, the series resistance (R<sub>SD</sub>) was calculated; R<sub>SD</sub> increased from 361 to 546 kΩ. Potentiation and depression were measured for evaluating the performance of the neuromorphic device application. The plasticity synaptic current change (ΔPSC) was 37.7 and 22.8 nA before and after proton irradiation. When measuring the current values of the reservoir computing (RC) states, clear differences in states were observed post-proton irradiation.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"204 ","pages":"Article 110320"},"PeriodicalIF":4.6,"publicationDate":"2025-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145681831","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-12-02DOI: 10.1016/j.mssp.2025.110316
Dabin Jeon , Seung Hun Lee , Chang-Shin Park , Han-Ki Kim , Sung-Nam Lee
We report optoelectronic synaptic behaviors of WO3-based devices with symmetric (Ag/WO3/Ag) and asymmetric (Ag/WO3/Pt) electrode configurations to emulate biological learning and memory functions. Structural and spectroscopic analyses confirm the presence of oxygen vacancies and deep-level defects, which contribute to persistent photoconductivity and defect-mediated emissions. Both devices exhibit light-induced excitatory postsynaptic current (EPSC) modulation depending on ultraviolet pulse duration, intensity, number, and frequency, mimicking synaptic potentiation. The Ag/WO3/Ag device shows consistently higher EPSC, faster learning, and longer retention than its asymmetric counterpart due to improved carrier injection and reduced interfacial barriers. Learning–forgetting experiments reveal that repeated optical stimulation enables faster learning and enhanced memory retention in both structures. Visual memory mapping using 3 × 3 pixel arrays further demonstrate spatial encoding and gradual forgetting of a “T”-shaped pattern, with the symmetric device retaining higher contrast over time. These findings highlight the critical role of electrode structure in tuning optoelectronic synaptic performance and suggest that defect-engineered WO3 thin films with optimized interfaces are promising candidates for neuromorphic vision and light-driven memory applications.
{"title":"Synaptic plasticity and visual memory in WO3-Based optoelectronic devices controlled by electrode configuration","authors":"Dabin Jeon , Seung Hun Lee , Chang-Shin Park , Han-Ki Kim , Sung-Nam Lee","doi":"10.1016/j.mssp.2025.110316","DOIUrl":"10.1016/j.mssp.2025.110316","url":null,"abstract":"<div><div>We report optoelectronic synaptic behaviors of WO<sub>3</sub>-based devices with symmetric (Ag/WO<sub>3</sub>/Ag) and asymmetric (Ag/WO<sub>3</sub>/Pt) electrode configurations to emulate biological learning and memory functions. Structural and spectroscopic analyses confirm the presence of oxygen vacancies and deep-level defects, which contribute to persistent photoconductivity and defect-mediated emissions. Both devices exhibit light-induced excitatory postsynaptic current (EPSC) modulation depending on ultraviolet pulse duration, intensity, number, and frequency, mimicking synaptic potentiation. The Ag/WO<sub>3</sub>/Ag device shows consistently higher EPSC, faster learning, and longer retention than its asymmetric counterpart due to improved carrier injection and reduced interfacial barriers. Learning–forgetting experiments reveal that repeated optical stimulation enables faster learning and enhanced memory retention in both structures. Visual memory mapping using 3 × 3 pixel arrays further demonstrate spatial encoding and gradual forgetting of a “T”-shaped pattern, with the symmetric device retaining higher contrast over time. These findings highlight the critical role of electrode structure in tuning optoelectronic synaptic performance and suggest that defect-engineered WO<sub>3</sub> thin films with optimized interfaces are promising candidates for neuromorphic vision and light-driven memory applications.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"204 ","pages":"Article 110316"},"PeriodicalIF":4.6,"publicationDate":"2025-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145681828","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-12-01DOI: 10.1016/j.mssp.2025.110318
De Liu , Jiaming Li , Chao Xian , Zhiyang Gu
Silicon carbide (4H-SiC), a typical difficult-to-machine material, poses significant challenges in precision surface machining due to its high hardness and brittleness. Ultrasonic vibration-assisted polishing has emerged as an effective method for achieving global flattening of 4H-SiC wafer. This study employs molecular dynamics simulations to investigate the interaction mechanisms between two abrasive grains under three vibration modes: transverse, longitudinal, and reverse. Simulation results show that vibration reduces polishing forces, while coupled abrasive grains further decrease forces and improve surface residual stress distribution. Longitudinal vibration increases dislocation density, whereas reverse vibration reduces it. Polishing experiments confirmed that applied vibration enhances surface quality. These findings provide important theoretical support for efficient precision polishing of 4H-SiC wafer.
{"title":"Study on material removal by ultrasonic vibration-assisted polishing of silicon carbide wafer (4H-SiC)","authors":"De Liu , Jiaming Li , Chao Xian , Zhiyang Gu","doi":"10.1016/j.mssp.2025.110318","DOIUrl":"10.1016/j.mssp.2025.110318","url":null,"abstract":"<div><div>Silicon carbide (4H-SiC), a typical difficult-to-machine material, poses significant challenges in precision surface machining due to its high hardness and brittleness. Ultrasonic vibration-assisted polishing has emerged as an effective method for achieving global flattening of 4H-SiC wafer. This study employs molecular dynamics simulations to investigate the interaction mechanisms between two abrasive grains under three vibration modes: transverse, longitudinal, and reverse. Simulation results show that vibration reduces polishing forces, while coupled abrasive grains further decrease forces and improve surface residual stress distribution. Longitudinal vibration increases dislocation density, whereas reverse vibration reduces it. Polishing experiments confirmed that applied vibration enhances surface quality. These findings provide important theoretical support for efficient precision polishing of 4H-SiC wafer.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"204 ","pages":"Article 110318"},"PeriodicalIF":4.6,"publicationDate":"2025-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145681876","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-12-01DOI: 10.1016/j.mssp.2025.110319
Yan Ren , Yiqiang Ni , Xubo Song , Guodong Gu , Yuanjie Lv , Yongtao Yu , Yinle Li , Chao Pang , Zhihong Feng , Shengze Zhou , Honghui Liu
In this work, we demonstrate a significant improvement in the performance of GaN terahertz (THz) Schottky barrier diodes (SBDs) via the post-anode annealing (PAA) process. The breakdown voltage of GaN THz SBDs was increased from 15.14 V to 23.70 V, which effectively enhances the power density of the device. The annealing mechanism of the Ni/Au interface reveals that the PAA process significantly mitigates Schottky barrier inhomogeneity and reduces interface state density (NSS). High-resolution transmission electron microscopy (HRTEM) and atomic force microscopy (AFM) images reveal evidence of alloying occurring at the Ni/GaN interface. Meanwhile, the alignment of triangular metal clusters along the step-flow direction indicates that the PAA process effectively suppresses metal-induced gap states resulting from step-flow morphology at the Ni/GaN interface, thereby promoting the formation of a high-quality Ni/Au contact. This mechanism significantly contributes to the enhanced performance of GaN THz SBDs. Hence, this approach provides an efficient solution for high-power THz source applications.
{"title":"Mechanism analysis of performance enhancement in GaN terahertz Schottky barrier diodes by post-anode annealing","authors":"Yan Ren , Yiqiang Ni , Xubo Song , Guodong Gu , Yuanjie Lv , Yongtao Yu , Yinle Li , Chao Pang , Zhihong Feng , Shengze Zhou , Honghui Liu","doi":"10.1016/j.mssp.2025.110319","DOIUrl":"10.1016/j.mssp.2025.110319","url":null,"abstract":"<div><div>In this work, we demonstrate a significant improvement in the performance of GaN terahertz (THz) Schottky barrier diodes (SBDs) via the post-anode annealing (PAA) process. The breakdown voltage of GaN THz SBDs was increased from 15.14 V to 23.70 V, which effectively enhances the power density of the device. The annealing mechanism of the Ni/Au interface reveals that the PAA process significantly mitigates Schottky barrier inhomogeneity and reduces interface state density (<em>N</em><sub><em>SS</em></sub>). High-resolution transmission electron microscopy (HRTEM) and atomic force microscopy (AFM) images reveal evidence of alloying occurring at the Ni/GaN interface. Meanwhile, the alignment of triangular metal clusters along the step-flow direction indicates that the PAA process effectively suppresses metal-induced gap states resulting from step-flow morphology at the Ni/GaN interface, thereby promoting the formation of a high-quality Ni/Au contact. This mechanism significantly contributes to the enhanced performance of GaN THz SBDs. Hence, this approach provides an efficient solution for high-power THz source applications.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"204 ","pages":"Article 110319"},"PeriodicalIF":4.6,"publicationDate":"2025-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145681877","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Organic-Inorganic Hybrid halide perovskites have garnered a lot of attention as a potential candidate for environmental remediation and optoelectronic applications. A novel lead-free bismuth hybrid perovskite was synthesized and further used for the photodegradation of detrimental pollutants. The as-synthesized compound [C10H16N]2BiCl5 was characterized using a number of techniques such as powder X-ray diffraction (PXRD), FTIR, Raman, and SEM. Rhodamine B and ciprofloxacin were chosen as typical pollutants for the degradation under UV and visible lights. The compound was found to be thermally stable up to 400 K. Additionally, the Coats-Redfernmethod was applied for the calculation of activation energy (Ea), which was found to be 2.4 kJ/mol. The surface area to volume ratio of the catalyst was found to be 19.40 m2/g. The catalyst completely removed the RhB dye and ciprofloxacin antibiotic in 30 min. The catalyst's excellent photocatalytic activity can be attributed to the combined effects of enhanced dye adsorption. The direct band gap of the material was found to be 2.69 eV, whereas the indirect band gap of the material was calculated to be 2.86 eV. Therefore, this study offers fresh perspectives into the design, fabrication, and engineering of the hybrid [C10H16N]2BiCl5 perovskite and its application for the elimination of harmful and detrimental pollutants.
{"title":"Bismuth-based organic-inorganic hybrid perovskite [C10H16N]2BiCl5 as a novel visible-light active photocatalyst for the degradation of rhodamine B dye and ciprofloxacin antibiotic","authors":"Dinesh Kulhary , Sutripto Majumder , Erum Gul Naz , Yogendra Singh , Sunita Shalabh Pachori , Sainath Narayan Bhavsar , Manish R. Bhise","doi":"10.1016/j.mssp.2025.110317","DOIUrl":"10.1016/j.mssp.2025.110317","url":null,"abstract":"<div><div>Organic-Inorganic Hybrid halide perovskites have garnered a lot of attention as a potential candidate for environmental remediation and optoelectronic applications. A novel lead-free bismuth hybrid perovskite was synthesized and further used for the photodegradation of detrimental pollutants. The as-synthesized compound [C<sub>10</sub>H<sub>16</sub>N]<sub>2</sub>BiCl<sub>5</sub> was characterized using a number of techniques such as powder X-ray diffraction (PXRD), FTIR, Raman, and SEM. Rhodamine B and ciprofloxacin were chosen as typical pollutants for the degradation under UV and visible lights. The compound was found to be thermally stable up to 400 K. Additionally, the Coats-Redfernmethod was applied for the calculation of activation energy (E<sub>a</sub>), which was found to be 2.4 kJ/mol. The surface area to volume ratio of the catalyst was found to be 19.40 m<sup>2</sup>/g. The catalyst completely removed the RhB dye and ciprofloxacin antibiotic in 30 min. The catalyst's excellent photocatalytic activity can be attributed to the combined effects of enhanced dye adsorption. The direct band gap of the material was found to be 2.69 eV, whereas the indirect band gap of the material was calculated to be 2.86 eV. Therefore, this study offers fresh perspectives into the design, fabrication, and engineering of the hybrid [C<sub>10</sub>H<sub>16</sub>N]<sub>2</sub>BiCl<sub>5</sub> perovskite and its application for the elimination of harmful and detrimental pollutants.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"204 ","pages":"Article 110317"},"PeriodicalIF":4.6,"publicationDate":"2025-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145681874","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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