Materials Science in Semiconductor Processing最新文献

{"title":"Experimental and theoretical study of 90Sr/90Y-n-Si/ZnO betavoltaic battery and theoretical prediction of homojunction betavoltaic cells performance","authors":"Zohreh Movahedian,&nbsp;Hossein Tavakoli-Anbaran","doi":"10.1016/j.mssp.2024.109059","DOIUrl":"10.1016/j.mssp.2024.109059","url":null,"abstract":"<div><div>Today, betavoltaic batteries has been considered due to their high energy density and long life for operating electrical systems in inaccessible and hostile environments. Conventional electrochemical batteries, despite their widespread use in electronic devices, have a limited lifetime and tend to degrade in extreme environmental conditions. The current paper pursues three goals. The first goal is to the experimental and theoretical investigation of a n-Si/ZnO heterojunction betavoltaic battery based on ⁹⁰Sr/⁹⁰Y source. The second goal is to optimize ZnO, SnO₂, BN, and diamond homojunction betavoltaic cells in two planar and cubical models by Monte Carlo simulation (MCNP code). The third goal is to present a new approach for estimating the standard error in calculating the parameters of betavoltaic batteries. In order to fabrication of a n-Si/ZnO heterojunction, the ZnO nanospheres were placed on the n-Si (100) substrate using chemical bath deposition (CBD) technology. The Al and Au electrodes were deposited on the formed sample. Then this sample was exposed to the radiation of an external ⁹⁰Sr/⁹⁰Y source with an activity of 12.8 mCi. The experimental values obtained for the short circuit current (I_sc), open circuit voltage (V_oc), efficiency (η), and maximum output power (P_max) were 0.047 μA, 0.015 V, 3.4 × 10⁻⁴ percent, and 0.141 nW, respectively. To compare with the experiment, we investigated the n-Si/ZnO betavoltaic cell by MCNP code. In the simulation, the beta spectrum of the ⁹⁰Sr/⁹⁰Y source was considered. The calculated theoretical values for I_sc, V_oc, η, and P_max were 0.063 μA, 0.020 V, 6.4 × 10⁻⁴ percent, and 0.265 nW, respectively. The experimental results show that the simulation results can be valid. In the optimization of ZnO, SnO₂, BN, and diamond homojunction betavoltaic cells in two planar and cubical models by MCNP code, it was found that the I_sc, V_oc, η, and P_max of the cubical model are better compared to the planar model. In the cubical model, P_max of ZnO, SnO₂, BN, and diamond betavoltaic batteries is 2633.34 nW ± 0.16 %, 1670.49 nW ± 0.15 %, 198.20 nW ± 0.17 %, and 1315.24 nW ± 0.15 %, respectively. In other words, P_max of the ZnO betavoltaic battery is about 58 %, 1229 %, and 100 % more than P_max of SnO₂, BN, and diamond betavoltaic batteries, respectively. P_max of the SnO₂ betavoltaic battery is about 743 % and 27 % more than P_max of BN and diamond betavoltaic batteries, respectively. The results show that ZnO and SnO₂ betavoltaic batteries can perform better compared to BN and diamond betavoltaic batteries. Also, their growth process is less expensive compared to BN and diamond.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"186 ","pages":"Article 109059"},"PeriodicalIF":4.2,"publicationDate":"2024-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142572413","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Semiconductor WO3 thin films deposited by pulsed reactive magnetron sputtering","authors":"A. Písaříková ,&nbsp;H. Krýsová ,&nbsp;A. Kapran ,&nbsp;P. Písařík ,&nbsp;M. Čada ,&nbsp;J. Olejníček ,&nbsp;R. Hippler ,&nbsp;Z. Hubička","doi":"10.1016/j.mssp.2024.109034","DOIUrl":"10.1016/j.mssp.2024.109034","url":null,"abstract":"<div><div>A pulsed reactive magnetron sputtering system with a tungsten target and a gas mixture of argon and oxygen was investigated as a source for the deposition of semiconductor WO₃ thin films on soda lime glass substrates and on the glass with transparent conductive SnO₂:F (FTO) electrode. The reactive sputtering process was performed in HiPIMS mode with low pulse repetition frequency f_p ≈ 50–100 Hz and short pulse duration in HiPIMS discharge T_on = 100 μs. The second mode investigated was the mid-frequency (MF) magnetron discharge with pulse frequency f_p = 40 kHz and pulse length T_on = 15 μs. The plasma parameters were investigated for both HiPIMS and MF modes using the planar RF probe operating at the frequency f_probe = 350 kHz and the grid QCM with biased collector electrode. Ion density n_i and tail electron temperature (T_e) were determined in both pulsed reactive magnetron sputtering discharge modes with time resolution. The maximum value n_i ≈ 5 · 10¹⁷ m⁻³ was found in the reactive HiPIMS mode, and the maximum value n_i ≈ 7 · 10¹⁶ m⁻³ was found in the reactive MF (40 kHz) mode. The degree of ionization of sputtered particles in reactive HiPIMS was determined for different values of (Q_O2) and was found to be in the range of r_i ≈ 0.1–0.3. The deposition rate determined by QCM in reactive HiPIMS was practically independent on (Q_O2), but in the case of reactive MF, the measured deposition rate decreased significantly with increasing (Q_O2). The WO₃ films deposited in both modes have a predominantly monoclinic crystal structure. The light and dark conductivity and the light/dark conductivity ratio (L_d) were measured under dark conditions and UV light illumination. At higher (Q_O2), the maximum value of L_d ≈ 300 was found for MF deposited WO₃ and the maximum value of L_d ≈ 30 was found for HiPIMS deposited WO₃. The photoelectrochemical measurement of WO₃ deposited on FTO electrodes confirmed the n-type conductivity, and these films functioned as photoanodes in photoelectrochemical cells. MF deposited WO₃ films systematically exhibited slightly higher photocurrents than HiPIMS deposited WO₃. It was shown that these optimum photocurrents for HiPIMS and MF were found at Q_O2 ≈ 80 sccm and could not be improved by further increasing of (Q_O2).</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"186 ","pages":"Article 109034"},"PeriodicalIF":4.2,"publicationDate":"2024-11-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142572412","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Tuning of electrical properties and persistent photoconductivity of SnO2 thin films via La doping for optical memory applications","authors":"P. Asha Hind ,&nbsp;Pawan Kumar ,&nbsp;U.K. Goutam ,&nbsp;B.V. Rajendra","doi":"10.1016/j.mssp.2024.109073","DOIUrl":"10.1016/j.mssp.2024.109073","url":null,"abstract":"<div><div>This work explored the potential of utilizing Lanthanum doped tin oxide Sn_1−xLa_xO₂ (x = 0.01 to 0.1) based Metal-Semiconductor-Metal Ohmic photoconductors for optical memory applications making use of the persistent photoconductivity (PPC) property. The structural, optical, and electrical properties of Sn_1−xLa_xO₂ thin films deposited on glass substrates using the spray pyrolysis method, with a focus on the impact of lanthanum concentration on the photoresponse characteristics was investigated. Raman spectroscopy confirmed the presence of oxygen vacancies and nanometric grain size in the films along with the typical Raman active modes of tin oxide. The Sn⁴⁺ and La³⁺ oxidation states in Sn_1−xLa_xO₂ as well as the contributions from lattice oxygen and oxygen vacancies were identified using XPS. Photoluminescence studies revealed emissions in the UV, violet, blue, and yellow regions, corresponding to tin interstitials, oxygen vacancies, and other defects, with intensity variations based on La concentration. All films exhibited n-type conductivity, with La content influencing both resistivity and carrier concentration. Photoconductivity measurements demonstrated enhanced photocurrent under UV illumination, with La doping affecting energy levels and defect states. The Sn_0.90La_0.10O₂ film possessed a photocurrent retention of nearly 64 % within a span of 10⁴ s, showing that higher concentration of La favoured the enhancement of retention of photocurrent for a comparatively longer duration. The significant persistent photoconductivity requires the conditions like optically active materials, a built-in electric field to separate electron-hole pairs, and defect states to trap carriers, which are all met by the prepared Sn_1-xLa_xO₂ photoconductor with higher La doping levels, confirming the suitability of these films for practical use as optical non-volatile memory elements.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"186 ","pages":"Article 109073"},"PeriodicalIF":4.2,"publicationDate":"2024-11-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142572411","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Homoepitaxial growth of device-grade GaAs using low-pressure remote plasma CVD","authors":"Lise Watrin ,&nbsp;François Silva ,&nbsp;Ludovic Largeau ,&nbsp;Nathaniel Findling ,&nbsp;Mirella Al Katrib ,&nbsp;Muriel Bouttemy ,&nbsp;Kassiogé Dembélé ,&nbsp;Nicolas Vaissière ,&nbsp;Cyril Jadaud ,&nbsp;Pavel Bulkin ,&nbsp;Jean-Charles Vanel ,&nbsp;Erik V. Johnson ,&nbsp;Karim Ouaras ,&nbsp;Pere Roca i Cabarrocas","doi":"10.1016/j.mssp.2024.109069","DOIUrl":"10.1016/j.mssp.2024.109069","url":null,"abstract":"<div><div>We have achieved the growth of high-quality, homoepitaxial 100 GaAs thin films at 0.5 mbar and 500 °C using a Remote Plasma Chemical Vapor Deposition (RP-CVD) reactor. With this process, we demonstrate a film growth rate up to 3 μm/h, comparable to the conventional MOCVD technique. The resulting films exhibit structural characteristics close to those of commercial GaAs wafers, with excellent crystalline quality as confirmed by SAED patterns and XRD rocking-curve measurements for the 004 peak with a FWHM of 0.004°. AFM measurements reveal a surface roughness of 0.2 nm, similar to that of a polished wafer. Analysis of the chemical composition – as determined through XPS surface and depth-profiled measurements – indicates that the film is homogeneous, with a constant III/V ratio of 1 throughout the whole layer, and has no detectable carbon or oxygen contamination. Additionally, the films demonstrate a sharp photoluminescence peak (FWHM of 55 meV), a p-type doping concentration of 1.10¹⁸ cm⁻³, and a hole mobility of 172 cm² V⁻¹.s⁻¹. This work thus demonstrates a cost-effective growth method for III-V devices, enabled by the reduced gas consumption (only a few sccm, compared to tens of L/min in MOCVD) in RP-CVD operation at low pressure.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"186 ","pages":"Article 109069"},"PeriodicalIF":4.2,"publicationDate":"2024-11-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142572414","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Novel Janus α-Au4XY (X/Y = S, Se, Te) monolayers with ultra-high carrier mobility: A first-principles study","authors":"Nguyen V. Vinh ,&nbsp;Le C. Nhan ,&nbsp;Dang X. Du ,&nbsp;Khang D. Pham","doi":"10.1016/j.mssp.2024.109045","DOIUrl":"10.1016/j.mssp.2024.109045","url":null,"abstract":"<div><div>In this paper, we theoretically propose a series of Janus <span><math><mi>α</mi></math></span>-Au<span><math><msub><mrow></mrow><mrow><mn>4</mn></mrow></msub></math></span>XY (X/Y = S, Se, Te; X <span><math><mo>≠</mo></math></span> Y) monolayers and investigate their structural stability, electronic features, and transport properties based on first-principle calculations. It is indicated that Janus <span><math><mi>α</mi></math></span>-Au<span><math><msub><mrow></mrow><mrow><mn>4</mn></mrow></msub></math></span>XY monolayers have a structurally stable and can be synthesized experimentally. Janus <span><math><mi>α</mi></math></span>-Au<span><math><msub><mrow></mrow><mrow><mn>4</mn></mrow></msub></math></span>XY monolayers exhibit a low Young’s modulus and their mechanical features are slightly anisotropic. At the ground state, Janus <span><math><mi>α</mi></math></span>-Au<span><math><msub><mrow></mrow><mrow><mn>4</mn></mrow></msub></math></span>XY monolayers possess semiconducting characteristics with very steep band dispersions near the conduction band minimum, which is expected to ultra-high electron mobility. The electronic features of Janus <span><math><mi>α</mi></math></span>-Au<span><math><msub><mrow></mrow><mrow><mn>4</mn></mrow></msub></math></span>XY are highly sensitive to the biaxial strains <span><math><msub><mrow><mi>ɛ</mi></mrow><mrow><mi>x</mi><mi>y</mi></mrow></msub></math></span>, particularly the applied compressive biaxial strains. Interestingly, the transitions from the semiconductor to the metal phases are observed in all three configurations of <span><math><mi>α</mi></math></span>-Au<span><math><msub><mrow></mrow><mrow><mn>4</mn></mrow></msub></math></span>XY at <span><math><mrow><msub><mrow><mi>ɛ</mi></mrow><mrow><mi>x</mi><mi>y</mi></mrow></msub><mo>=</mo><mo>−</mo><mn>6</mn><mtext>%</mtext></mrow></math></span>. Janus <span><math><mi>α</mi></math></span>-Au<span><math><msub><mrow></mrow><mrow><mn>4</mn></mrow></msub></math></span>XY monolayers exhibit superior transport characteristics with the electron mobility reaching up to <span><math><mrow><mn>3</mn><mo>.</mo><mn>20</mn><mo>×</mo><mn>1</mn><msup><mrow><mn>0</mn></mrow><mrow><mn>5</mn></mrow></msup></mrow></math></span> cm<span><math><msup><mrow></mrow><mrow><mn>2</mn></mrow></msup></math></span>V⁻¹s⁻¹ (<span><math><mi>α</mi></math></span>-Au<span><math><msub><mrow></mrow><mrow><mn>4</mn></mrow></msub></math></span>SSe monolayer). Our findings not only explore the outstanding electronic and transport features of Janus <span><math><mi>α</mi></math></span>-Au<span><math><msub><mrow></mrow><mrow><mn>4</mn></mrow></msub></math></span>XY nanostructures but also indicate their potential applications in nanoelectronics and nanoelectromechanical devices.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"186 ","pages":"Article 109045"},"PeriodicalIF":4.2,"publicationDate":"2024-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142572410","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Challenges and solutions in Mist-CVD of Ga2O3 heteroepitaxial films","authors":"A.V. Vasin ,&nbsp;R. Yatskiv ,&nbsp;O. Černohorský ,&nbsp;N. Bašinová ,&nbsp;J. Grym ,&nbsp;A. Korchovyi ,&nbsp;A.N. Nazarov ,&nbsp;J. Maixner","doi":"10.1016/j.mssp.2024.109063","DOIUrl":"10.1016/j.mssp.2024.109063","url":null,"abstract":"<div><div>Mist chemical vapor deposition (mist-CVD) has recently attracted interest as a facile, cost-effective, environmentally friendly method for the deposition of Ga₂O₃ films. This paper addresses selected challenges and issues that hinder the fabrication of high-quality Ga₂O₃ epitaxial films. Based on numerical simulations of the gas flow we show that the use of a fan, introducing atmospheric air into the horizontal growth reactor, avoids the formation of vortices and mist velocity fluctuations, which develop when a conventional carrier gas delivery system is employed. We also demonstrate that the presence of organic ligands in Ga acetylacetonate results in undesirable contamination of Ga₂O₃ films by pyrolytic carbon, which strongly affects the optical and morphological properties and can lead to incorrect estimation of the optical band gap. Carbon contamination is shown to be reduced by increasing the growth temperature, by growing under oxygen-rich conditions, or by using carbon-free precursors such as GaCl₃. We further experimentally prove that when the thickness of Ga₂O₃ increases, a multiphase epitaxial film forms, presumably due to enhanced thermal stress. Finally, we experimentally show that nonstoichiometric GaO_xCl_yH_z microparticles form on top of a Ga₂O₃ film in the reactor zone, where the aerosol is completely evaporated and a vapor ambient is formed.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"186 ","pages":"Article 109063"},"PeriodicalIF":4.2,"publicationDate":"2024-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142561345","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Synergistic effect of 3D porous tri-metallic MOF based electrode materials for highly stable asymmetric supercapacitors","authors":"Hassan Shabbir ,&nbsp;Hafiz Muhammad Fahad ,&nbsp;Rehana Sharif ,&nbsp;Annam Butt ,&nbsp;Sehar Fatima ,&nbsp;Fozia Shaheen ,&nbsp;Rajan Jose ,&nbsp;Rizwan Wahab ,&nbsp;Veeradasan Perumal ,&nbsp;Samina Akbar ,&nbsp;Sulaiman Al-Sulaimi ,&nbsp;Jin Yang","doi":"10.1016/j.mssp.2024.109036","DOIUrl":"10.1016/j.mssp.2024.109036","url":null,"abstract":"<div><div>Metal-organic frameworks (MOFs) have captured huge consideration owing to their high porosity structure and large surface area for their utilization in supercapacitors. The synthesis parameters play a vital role in the morphological and structural features of MOFs. Herein, a trimetallic metal-organic framework with the morphology of flower-based hierarchical microspheres has been synthesized by solvothermal method with optimization of the reaction duration. The hierarchical structure with connected nanosheets can provide more electroactive sites that lead to exceptional electrochemical performance. NiCoMn-MOF prepared with a reaction time of 48 h (MOF-48) delivers the specific capacitance of 1905 F/g (1 A/g) with rate capability of 71.52 % (10 A/g). Furthermore, MOF-48||Act-C asymmetric supercapacitor displays a remarkable capacitance of 226 F/g (1 A/g) and keeps 97 % of initial capacitance after 15000 continuous cycles. This asymmetric device has a power density of 6945.4 W/kg (10 A/g) and an energy density of 61.52 Wh/kg (1 A/g). Therefore, this study offers an effective technique to improve the electrochemical effectiveness of MOF-based electrodes for high-performance supercapacitors.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"186 ","pages":"Article 109036"},"PeriodicalIF":4.2,"publicationDate":"2024-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142561344","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Processing of gallium oxide crystals using liquid-immersion wire-cut electrical discharge machining","authors":"Zhang Yimiao ,&nbsp;Qiu Mingbo ,&nbsp;Li Hui ,&nbsp;Wang Yingmin ,&nbsp;Li Jingtao ,&nbsp;Liu Zhaowei ,&nbsp;Di Yifan ,&nbsp;Cheng Hongjuan","doi":"10.1016/j.mssp.2024.109049","DOIUrl":"10.1016/j.mssp.2024.109049","url":null,"abstract":"<div><div>To address the issues of cracking and cleavage commonly encountered during conventional mechanical processing of gallium oxide (<span><math><mrow><msub><mtext>Ga</mtext><mn>2</mn></msub><msub><mi>O</mi><mn>3</mn></msub></mrow></math></span>) crystals using several methods, such as outer circle cutting and diamond wire sawing, this study proposed a liquid-immersion wire-cut electrical discharge machining (WEDM) technique. This study also revealed that the segregation phenomena during the growth of <span><math><mrow><msub><mtext>Ga</mtext><mn>2</mn></msub><msub><mi>O</mi><mn>3</mn></msub></mrow></math></span> crystals resulted in non-uniform resistivity within the crystal, leading to the failure of traditional spray-type electro-discharge wire-cutting techniques. To overcome this limitation, the feasibility of the liquid-immersion WEDM technique was proposed, and an experimental platform was established. Resistivity measurements of the cut surfaces of <span><math><mrow><msub><mtext>Ga</mtext><mn>2</mn></msub><msub><mi>O</mi><mn>3</mn></msub></mrow></math></span> in kerosene immersion revealed a reduction of approximately 99.2 % in the resistivity difference. This result shows that the formation of carbon films during processing can effectively compensate for the intrinsic non-uniform resistivity. An equivalent circuit model for liquid-immersion WEDM of <span><math><mrow><msub><mtext>Ga</mtext><mn>2</mn></msub><msub><mi>O</mi><mn>3</mn></msub></mrow></math></span> crystals in kerosene was developed. Thermodynamic and kinetic analyses were conducted on hydrocarbon decomposition reactions in kerosene at discharge temperatures. The results confirmed that decomposition reactions could occur during the discharge process. A truncation experiment for <span><math><mrow><msub><mtext>Ga</mtext><mn>2</mn></msub><msub><mi>O</mi><mn>3</mn></msub></mrow></math></span> ingots was conducted, and a method using single-crystal silicon for electrical assistance in the processing of 1-inch wafers was proposed. The experimental results showed that liquid-immersion WEDM of <span><math><mrow><msub><mtext>Ga</mtext><mn>2</mn></msub><msub><mi>O</mi><mn>3</mn></msub></mrow></math></span> crystals in kerosene effectively suppressed cracking and cleavage, achieving a processing accuracy within 50 μm and successfully producing a 1-inch circular <span><math><mrow><msub><mtext>Ga</mtext><mn>2</mn></msub><msub><mi>O</mi><mn>3</mn></msub></mrow></math></span> wafer, with the machining accuracy improved by approximately 66.6 % compared to diamond wire cutting.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"186 ","pages":"Article 109049"},"PeriodicalIF":4.2,"publicationDate":"2024-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142561343","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Green fabrication of aniline over mesoporous NiS/YVO4 S-type heterostructure photocatalyst under visible light exposure","authors":"Soad Z. Alsheheri ,&nbsp;Tamer M. Khedr","doi":"10.1016/j.mssp.2024.109064","DOIUrl":"10.1016/j.mssp.2024.109064","url":null,"abstract":"<div><div>The photocatalytic hydrogenation of hazardous nitrobenzene (NTB) can efficiently and safely yield aniline (AN), which holds considerable economic significance. The systematic development of superb visible light-proceeded photocatalytic substances that effectively harness the sun spectrum is crucial. In this contribution, mesoporous YVO₄ nanostructured crystals were first assembled employing block copolymer-aided sol-gel protocol and then coupled with NiS nanoparticles (NPs) (4.0–16.0 wt%) through ultrasonic self-growth and calcination to design mesoporous step-type (S-type) NiS/YVO₄ (N/Y) heterostructure photocatalysts. A detailed characterization substantiated powerful interface interaction and effective S-type charge transmission in the designed heterostructured materials. Moreover, optical and photoelectrochemical experiments unveiled superb light harvesting and improved charge separation efficiencies. Thanking the building of the S-type heterostructure, the N/Y heterostructure materials recorded notable photocatalytic proficiency than pristine YVO₄. Specifically, under exposure to visible light for 50 min, the optimal material (12.0 % N/Y) at the best dosage (2.4 g/L) achieved 100 % selective phototransformation of NTB into AN with a rate constant (K) of 0.0696 min⁻¹, superior to pristine YVO₄ (0.0015 min⁻¹) by a factor of 46.4. The 12.0 % N/Y heterostructure also indicated superb cyclic stability, mostly retaining its remarkable efficacy over five consecutive runs. The positive influence of the catalyst content on the NTB photoreduction on 12.0 % N/Y was examined and affirmed by the catalyst dosage alteration. Additionally, based on Mott-Schottky (M − S) measurements, the pathway of charge migration for 12.0 % N/Y heterostructure was suggested. The current contribution offers estimable insights into developing highly effective and stable photocatalytic substances.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"186 ","pages":"Article 109064"},"PeriodicalIF":4.2,"publicationDate":"2024-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142552575","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Photoassisted decoration of Ag nanoparticles onto TiO2 nanorod arrays for continuously reusable ultrasensitive SERS sensors","authors":"Ton Nu Quynh Trang ,&nbsp;Nguyen Tran Gia Bao ,&nbsp;Vu Thi Hanh Thu","doi":"10.1016/j.mssp.2024.109057","DOIUrl":"10.1016/j.mssp.2024.109057","url":null,"abstract":"<div><div>Herein, a hybrid nanoarray-based surface-enhanced Raman scattering (SERS) sensor was developed to obtain dual functionalities of SERS signal amplification and photocatalytic reusability for detecting trace organic pollutants and antibiotic residues in environmental water. The plasmonic metal was created by controlling the formation of Ag nanoparticles (NPs), which were uniformly anchored within rutile TiO₂ nanoarrays (r-TNRs) to form the Ag@r-TNRs platform. The SERS performance of the Ag@r-TNRs platform was obtained by optimizing photo-induced reduction strategy. Crystal violet (CV) and chloramphenicol (CAP) were chosen to assess the SERS behavior of the Ag@r-TNRs platform. The high sensitivity for detecting trace amounts of target molecules of Ag@r-TNRs hybrid nanostructure experienced both local electromagnetic mechanism (EM) and efficient charge transfer (CT). The prepared substrates exhibited ultralow detection (10⁻¹² M for CV and 10⁻¹¹ M for CAP) and high enhancement factors (EF) in the order of 4.9 × 10⁹ and 5.6 × 10⁸ for CV and CAP, respectively. Furthermore, duplex detection of dyes (CV and CAP) was successfully accomplished using Ag@r-TNRs to estimate SERS applications. Thanks to the excellent photocatalytic properties of TiO₂, the layered structures possessed steady and effective ultraviolet (UV) cleaning performance. After UV irradiation for 40 min, 99 % of the CV were completely decomposed at a UV illumination. This SERS substrate can be reused for many times with a determined recovery rate of 93 %. Accordingly, the bifunctional Ag@r-TNRs substrate shows great potential for SERS analysis and photocatalytic performance in water environmental remediation.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"186 ","pages":"Article 109057"},"PeriodicalIF":4.2,"publicationDate":"2024-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142552574","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}