Materials Science in Semiconductor Processing最新文献_第5页

Corrigendum to “Effects of replacing Cu with Ni and Ni-Zn on the structural, magnetic, and thermoelectric properties of the solution-processed Cu12Sb4S13 tetrahedrites” [Mater. Sci. Semicond. Proc. 198 (2025), 109803] “用Ni和Ni- zn取代Cu对溶液处理Cu12Sb4S13四面体的结构、磁性和热电性能的影响”的更正[Mater]。科学。Semicond。Proc. 198 (2025), 109803]

IF 4.6 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing

Pub Date : 2025-12-27 DOI: 10.1016/j.mssp.2025.110369

Oleksandr Dobrozhan , Roman Pshenychnyi , Maksym Yermakov , Bohdan Boiko , Vladimír Tkáč , Serhii Vorobiov , Anatoliy Opanasyuk

引用次数: 0

Optimization of periodic thickness on interface roughness in AlAs0.07Sb/AlSb superlattices AlAs0.07Sb/AlSb超晶格界面粗糙度的周期厚度优化

IF 4.6 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing

Pub Date : 2025-12-27 DOI: 10.1016/j.mssp.2025.110378

Le Qin , Renjie Wen , Jinyu Zhang , Jiaxin Yue , Fanlong Meng , Leran Zhao , Caixia Song , Zhongshan Zhang , Wenxin Wang , Hong Chen , Zhen Deng

Superlattices composed of AlAs_0.07Sb/AlSb have been successfully grown on GaSb substrates by the molecular beam epitaxy technique, which are suitable for use as barrier layers in nBn or pBn type InAsSb-based mid-wavelength infrared detectors. In order to improve carrier transport efficiency, it is important to carefully optimize the interface roughness layer of the barrier. In this study, we report a method to optimize the interface roughness of the superlattice barrier layer. We focus on optimizing the superlattice period thickness to improve the interface atomic migration state and achieve a smooth interface morphology for potential infrared detector applications. The roughness of the upper and lower interfaces of the superlattice can be effectively reduced by controlling the period thickness to 2.47 nm. The roughness of the upper and lower interfaces measured by X-ray reflectivity (XRR) is 0.589 nm and 0.732 nm, respectively. In addition, the reciprocal space mappings (RSM) of the (004) and (224) planes of AlAs_0.07Sb/AlSb superlattices show that the strain relaxation state of the superlattices grown at 480 °C is completely strained and no misfit dislocations are generated, thus resulting in excellent crystalline quality. This systematic method provides valuable insights for the fabrication of high-performance barrier mid-wavelength infrared detectors grown on GaSb substrates.

利用分子束外延技术在GaSb衬底上成功地生长出了由AlAs0.07Sb/AlSb组成的超晶格，该超晶格适合用作nBn或pBn型inassb基中波红外探测器的势垒层。为了提高载流子输运效率，对势垒的界面粗糙度层进行优化是十分重要的。在这项研究中，我们报告了一种优化超晶格势垒层界面粗糙度的方法。我们的重点是优化超晶格周期厚度，以改善界面原子迁移状态，并为潜在的红外探测器应用实现光滑的界面形态。将周期厚度控制在2.47 nm，可以有效地降低超晶格上下界面的粗糙度。x射线反射率（XRR）测量的上下界面粗糙度分别为0.589 nm和0.732 nm。另外，AlAs0.07Sb/AlSb超晶格的（004）面和（224）面互易空间映射（RSM）表明，在480℃下生长的超晶格的应变松弛状态是完全应变的，没有产生错配位错，从而获得了优异的晶体质量。这种系统的方法为在GaSb衬底上生长的高性能势垒中波长红外探测器的制造提供了有价值的见解。

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引用次数: 0

A multi-objective optimization of ultrasonic empowered polishing process for aluminium nitride substrate considering efficiency, quality, and carbon emission 考虑效率、质量和碳排放的氮化铝衬底超声抛光工艺多目标优化

IF 4.6 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing

Pub Date : 2025-12-27 DOI: 10.1016/j.mssp.2025.110371

Xin Chen , Yang Zhao , Chao Zhang , Jiliang Liu , Xiaolu Li , Jiangqin Ge , Zixuan Wang , Tianbiao Yu , Ji Zhao

Aluminium nitride (AlN) is widely used in ultra-precision semiconductor chips due to ultra-high bandgap width and breakdown field strength. However, the nanoscale surface polishing of AlN poses huge challenges in machining process, including low polishing efficiency and pit defects. Furthermore, the carbon emissions from the polishing process exert a detrimental impact on environmental conservation. To enhance the eco-friendliness and polishing efficacy of AlN, a novel ultrasonic empowered polishing (UEP) technology is proposed in this paper. Correspondingly, a novel sustainability-driven process parameter optimization framework based on the Taguchi, grey relational analysis (GRA) and principal component analysis (PCA) theories has been developed for the proposed UEP operation. The research systematically investigates the effects of core process parameters and material removal mechanisms. Results indicated that the optimal process parameter combination at 4 μm ultrasonic amplitude, 10 min polishing time, 80 mm polishing compression, 11000 rpm spindle speed, and 2.5 mm/s feed rate. The MRR achieved was 1759.984 μm²/min, with a roughness Ra value of 0.085 μm and carbon emissions of 1.382 kg. The carbon emissions were controlled at the optimal value, MRR increased by 16.87 %, polishing quality improved by 22.02 %, and the surface roughness profile exhibited greater flatness. This study provides an efficient, high-quality, and low-carbon ultrasonic empowered polishing approach for AlN substrates, offering a basis for breakthroughs in ultra-precision polishing technology for difficult-to-machine semiconductor materials.

氮化铝（AlN）具有极高的带隙宽度和击穿场强，在超精密半导体芯片中得到广泛应用。然而，纳米级AlN表面抛光在加工过程中存在着抛光效率低和凹坑缺陷等问题。此外，抛光过程中的碳排放对环境保护产生不利影响。为了提高氮化铝的生态友好性和抛光效果，提出了一种新型超声强化抛光技术。相应的，基于田口理论、灰色关联分析（GRA）和主成分分析（PCA）理论，建立了可持续驱动的UEP工艺参数优化框架。本研究系统地探讨了芯材工艺参数和材料去除机理的影响。结果表明：超声振幅为4 μm，抛光时间为10 min，抛光压缩量为80 mm，主轴转速为11000 rpm，进给速度为2.5 mm/s。所得MRR为1759.984 μm2/min，粗糙度Ra值为0.085 μm，碳排放量为1.382 kg。碳排放量控制在最优值，MRR提高了16.87%，抛光质量提高了22.02%，表面粗糙度轮廓呈现出更高的平整度。本研究为AlN基板提供了一种高效、高质量、低碳的超声抛光方法，为难加工半导体材料超精密抛光技术的突破奠定了基础。

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引用次数: 0

Enhanced stability and emissions of perovskite MAPbBr3 QDs via dual passivation for using as color conversion layers of white LEDs 通过双钝化增强钙钛矿mapbr3量子点的稳定性和发射，用于白光led的颜色转换层

IF 4.6 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing

Pub Date : 2025-12-27 DOI: 10.1016/j.mssp.2025.110389

Feng Tong , Yi Zhu , Zijiang Yang , Xiuquan Gu , Zheng Chen

Perovskite quantum dots (PeQDs) have excellent optoelectronic properties for next-generation display applications. However, the poor environmental stability hinders the practical application of this material. In this work, a MAPbBr₃@PVDF composite film was developed for white light-emitting diodes (WLEDs) through encapsulating MAPbBr₃ PeQDs into a flexible polymer, polyvinylidene fluoride (PVDF). To enhance the stability of MAPbBr₃@PVDF, MAPbBr₃ PeQDs was capped with commercial ZnO nanocrystals (NCs) before encapsulation. By optimizing the ZnO addition amount (40 μL), the composite film displayed the highest photoluminescence (PL) intensity, which was 1.18 times higher than that without undergoing the passivation. Meanwhile, it was noted that the ZnO passivation could increase the photoluminescence quantum yield (PLQY) value from 51.84 % to 56.03 %, while the time-resolved photoluminescence (TRPL) lifetime was lengthened from 37.01ns to 55.07ns. After dual passivation, the sample displayed a narrow PL emission at ∼520 nm with a full width at half maximum (FWHM) of 20 nm. Besides, the obtained MAPbBr₃-ZnO/PVDF composite film exhibited the better water, thermal and ambient stability. After heating at 100 °C for 30 min, the PL intensity attenuation of the MAPbBr₃-ZnO/PVDF film was just 43.4 %, which was much lower than that of the MAPbBr₃/PVDF film (68.5 %). After a UV irradiation for 2 h, the PL attenuation of ZnO-contained film was just 6.5 %, while the attenuation of the sample without ZnO was particularly high (26.7 %). After soaking in water for 7 days, the PL attenuation of ZnO-contained film was 10.5 %, which was much lower than the 17.4 % of the one without ZnO. Finally, the MAPbBr₃-ZnO/PVDF was employed for fabricating a WLED, which displays a color gamut coverage of 118 % under National Television Standards Committee (NTSC) standard.

钙钛矿量子点（PeQDs）在下一代显示应用中具有优异的光电性能。然而，环境稳定性差阻碍了这种材料的实际应用。在这项工作中，通过将MAPbBr3 PeQDs封装到柔性聚合物聚偏氟乙烯（PVDF）中，为白光发光二极管（wled）开发了MAPbBr3@PVDF复合薄膜。为了提高MAPbBr3@PVDF的稳定性，MAPbBr3 PeQDs在封装前被商用ZnO纳米晶体（NCs）覆盖。当ZnO添加量为40 μL时，复合膜的光致发光强度最高，是钝化前的1.18倍。同时，ZnO钝化可以将光致发光量子产率（PLQY）值从51.84%提高到56.03%，时间分辨光致发光（TRPL）寿命从37.01ns延长到55.07ns。经过双钝化后，样品在~ 520 nm处显示出窄的PL发射，半峰全宽（FWHM）为20 nm。制备的MAPbBr3-ZnO/PVDF复合膜具有较好的水稳定性、热稳定性和环境稳定性。在100℃加热30 min后，MAPbBr3- zno /PVDF薄膜的PL强度衰减仅为43.4%，远低于MAPbBr3/PVDF薄膜的衰减幅度（68.5%）。在紫外照射2 h后，含ZnO薄膜的PL衰减仅为6.5%，而不含ZnO样品的衰减特别高（26.7%）。在水中浸泡7天后，含ZnO薄膜的PL衰减为10.5%，远低于不含ZnO薄膜的17.4%。最后，采用MAPbBr3-ZnO/PVDF材料制备了WLED，其色域覆盖率达到118%，符合NTSC标准。

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引用次数: 0

Carbon-based photocatalysts: A review of applications in biofuel production, chemical synthesis, and dye degradation 碳基光催化剂：在生物燃料生产、化学合成和染料降解中的应用综述

IF 4.6 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing

Pub Date : 2025-12-26 DOI: 10.1016/j.mssp.2025.110380

Fazhar Nuryasari , Ibnu Tryansar Purba , Muhamad Ilyas Zainul Furqon , Vernanda Febrianti , Wibawa Hendra Saputera , Joko Waluyo

Photocatalysis provides a green and versatile solution to global challenges, including rising energy demand, sustainable chemical production, and environmental remediation. Due to their distinct physicochemical characteristics, structural adaptability, and tunable functionalities, carbon-based photocatalysts such as graphitic carbon nitride, graphene derivatives, carbon dots, and carbon-coated semiconductors have garnered increasing attention among the various materials investigated. This review provides a comprehensive overview of current research trends and practical applications of these materials, with a focus on their roles in biofuel synthesis, chemical production, and the removal of organic pollutants. The ways carbon materials enhance key photocatalytic functions like light harvesting, charge-carrier separation, and catalytic durability are given special consideration. Furthermore, various design approaches, including element doping, surface functionalization, and heterojunction formation, are thoroughly investigated to demonstrate their impact on efficiency and performance. This review aims to support the logical design and development of next-generation carbon-based photocatalysts for integrated solutions in sustainable energy and environmental technologies by describing the most recent developments, persistent challenges, and future directions.

光催化为全球挑战提供了一种绿色和通用的解决方案，包括不断增长的能源需求、可持续的化学生产和环境修复。由于其独特的物理化学特性、结构适应性和可调功能，碳基光催化剂，如石墨氮化碳、石墨烯衍生物、碳点和碳包覆半导体，在各种研究材料中受到越来越多的关注。本文综述了这些材料的研究现状和实际应用，重点介绍了它们在生物燃料合成、化工生产和有机污染物去除等方面的作用。碳材料增强关键光催化功能的方式，如光收集、电荷载流子分离和催化耐久性。此外，各种设计方法，包括元素掺杂，表面功能化和异质结的形成，都进行了深入的研究，以证明它们对效率和性能的影响。本综述旨在通过描述下一代碳基光催化剂的最新发展、持续挑战和未来方向，为可持续能源和环境技术集成解决方案的逻辑设计和开发提供支持。

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引用次数: 0

Cr2O3/CuBi2O4 heterojunction photocathodes with enhanced charge separation for efficient solar water splitting 具有增强电荷分离的Cr2O3/CuBi2O4异质结光电阴极用于高效太阳能水分解

IF 4.6 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing

Pub Date : 2025-12-26 DOI: 10.1016/j.mssp.2025.110384

Shukai Hao , Guofu Liu , Xuan Liu , Hui Fu , Tiankuo Chu , Xiao Fan , Angang Song

A Cr₂O₃/CuBi₂O₄ heterojunction was constructed to address the issues of limited photoelectrochemical (PEC) performance in CuBi₂O₄ photocathodes. This modification significantly enhances the PEC performance for water splitting. The thin films were prepared using the spray pyrolysis deposition technique, with the heterojunction formation conclusively demonstrated through X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), and supplementary characterization methodologies. PEC tests demonstrated that the heterojunction reached a photocurrent density of 0.083 mA/cm² at 0.5 V vs. RHE, representing a 1.8-fold enhancement compared to pure-phase CuBi₂O₄, along with improved charge transfer characteristics that contributed to its markedly superior photoelectrocatalytic activity. Electrochemical impedance spectroscopy (EIS) and photoluminescence (PL) analyses indicated that a built-in electric field was established at the heterojunction interface, which facilitated the improvement of charge separation efficiency. UV–vis and Tauc analyses indicated that CuBi₂O₄ (1.78 eV) and Cr₂O₃ (2.44 eV) form complementary bandgaps, enhancing light absorption. Mott-Schottky analysis verified the p-type semiconducting behavior of both materials, and when correlated with band structure assessments, it demonstrated that the Z-scheme charge transfer mechanism plays a crucial role in enhancing performance, thereby offering a novel approach for designing efficient and durable PEC systems.

为了解决CuBi2O4光电阴极光电性能有限的问题，构建了Cr2O3/CuBi2O4异质结。这种改性显著提高了PEC的水裂解性能。采用喷雾热解沉积技术制备薄膜，并通过x射线衍射（XRD）、x射线光电子能谱（XPS）、扫描电镜（SEM）和补充表征方法证实了异质结的形成。PEC测试表明，与RHE相比，异质结在0.5 V时达到0.083 mA/cm2的光电流密度，与纯相CuBi2O4相比，提高了1.8倍，同时改善了电荷转移特性，这使得其具有明显优越的光电催化活性。电化学阻抗谱（EIS）和光致发光（PL）分析表明，在异质结界面处建立了内置电场，有利于提高电荷分离效率。UV-vis和tac分析表明，CuBi2O4 （1.78 eV）和Cr2O3 （2.44 eV）形成互补带隙，增强了光吸收。Mott-Schottky分析验证了两种材料的p型半导体行为，当与能带结构评估相关联时，它表明Z-scheme电荷转移机制在提高性能方面起着至关重要的作用，从而为设计高效耐用的PEC系统提供了一种新的方法。

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引用次数: 0

High sensing performance for n-butanol detection based on ultrathin ZnO nanosheets at low temperature 基于超薄ZnO纳米片的低温正丁醇检测的高传感性能

IF 4.6 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing

Pub Date : 2025-12-26 DOI: 10.1016/j.mssp.2025.110388

Huihui Li , Jun Yang , Shaohong Wei , Yan Zhang , Yongdong Wu , Yongliang Du , Xin Di

Low-temperature n-butanol gas sensors with excellent performance are of critical importance to environmental monitoring applications. In this work, ZnO with varied morphologies was synthesized via a facile hydrothermal method and characterized using XRD, SEM, XPS, and TEM. Comparative evaluation of sensing capabilities reveals that the sensor based on porous ultrathin ZnO nanosheets exhibits superior n-butanol sensing performance at 40 °C, featuring a high response (125.3/100 ppm and 5.0/1 ppm), which is about 4.5–18.9 times higher than that of other samples, along with fast response/recovery times (9/20 s). Furthermore, the sensor displays remarkable selectivity for n-butanol, with response ratios 2.3 to 38 times higher than those for interfering gases such as ethanol, methanol, formaldehyde, and benzene. Moreover, it demonstrates excellent linearity (R² = 0.9802) with a theoretical limit of detection as low as 38 ppb. The improved performance is attributed to the absorption sites induced by oxygen vacancies and the unique nanosheet structure. Additionally, density functional theory (DFT) and thermodynamic calculations further confirm that the (100) plane exhibits strong adsorption of n-butanol, accompanied by higher energy released from the sensing reaction. These factors collectively contribute to the high response, low operating temperature, and superior selectivity of the porous ultrathin ZnO nanosheet to n-butanol.

性能优良的低温正丁醇气体传感器在环境监测应用中具有重要意义。本文采用水热法合成了不同形貌的氧化锌，并用XRD、SEM、XPS和TEM对其进行了表征。在40°C下，基于多孔超薄ZnO纳米片的传感器表现出优异的正丁醇传感性能，具有高响应（125.3/100 ppm和5.0/1 ppm），是其他样品的4.5-18.9倍，且响应/恢复时间快（9/20 s）。此外，该传感器对正丁醇具有显著的选择性，其响应比乙醇、甲醇、甲醛和苯等干扰气体的响应比高2.3 ~ 38倍。此外，它具有良好的线性（R2 = 0.9802），理论检出限低至38 ppb。性能的提高主要归功于氧空位诱导的吸收位点和独特的纳米片结构。此外，密度泛函理论（DFT）和热力学计算进一步证实了（100）平面对正丁醇具有较强的吸附作用，同时伴随着感应反应释放的较高能量。这些因素共同促成了多孔超薄ZnO纳米片对正丁醇的高响应、低工作温度和优越的选择性。

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引用次数: 0

Impact of growth temperature and Bi flux on InPBi layers grown on GaSb (001) 生长温度和Bi通量对在GaSb上生长InPBi层的影响（001）

IF 4.6 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing

Pub Date : 2025-12-26 DOI: 10.1016/j.mssp.2025.110382

Saharat Chomdech , Valgeir Sigmarsson , Wenich Pumee , Songphol Kanjanachuchai , Suphakan Kijamnajsuk , Kouichi Akahane , Chalermchai Himwas

Dilute bismide InPBi has attracted growing attention due to its unique characteristics, including large bandgap bowing, substantial enhancement of spin–orbit splitting, and compatibility with the mature InP technology platform. These advantages position InPBi as a promising candidate for high-efficiency mid-infrared optoelectronic devices. Regardless of its technological prospects, InPBi is a highly mismatched alloy with a high mixing enthalpy, which complicates its synthesis. Generally, the alloy exhibits insufficient Bi content and degraded structural/optical quality. Strain engineering is a concept for increasing Bi concentration by manipulating strain in the epilayer. This research employs the strain engineering concept by synthesizing InPBi epilayers on GaSb substrates for infrared applications using a dual-chamber molecular-beam epitaxy system. The concept seeks to introduce tensile strain into the InP matrix, thereby enhancing Bi incorporation in the epilayer as compared to traditional InPBi/InP heterostructure growth. We report on the growth of InPBi epitaxial layers on GaSb substrates and examine how variations in growth temperature and Bi flux affect their Bi incorporation, structural, and optical properties. The alloy with the highest Bi content, InP_0.973Bi_0.027, is fully relaxed on a GaSb substrate, achieved by growing at 300 °C and a Bi flux of 2×10⁻⁸ Torr. We also present the band diagram of InP_0.973Bi_0.027/GaSb heterostructure, derived from multiple-peak photoluminescence data. To support the strain engineering concept, we demonstrate that the Bi concentration in this alloy is higher than that of InPBi synthesized on an InP substrate (InP_0.988Bi_0.012) under identical growth conditions.

稀铋InPBi由于其独特的特性，包括大的带隙弯曲，自旋轨道分裂的大幅增强，以及与成熟的InP技术平台的兼容性，越来越受到人们的关注。这些优点使InPBi成为高效率中红外光电器件的有前途的候选者。不管它的技术前景如何，InPBi是一种高度不匹配的合金，混合焓很高，这使得它的合成变得复杂。总体而言，该合金铋含量不足，结构/光学质量下降。应变工程是通过控制薄膜中的应变来提高铋浓度的概念。本研究采用应变工程的概念，利用双室分子束外延系统在GaSb衬底上合成了用于红外应用的InPBi薄膜。该概念旨在将拉伸应变引入InP基体，从而与传统的InPBi/InP异质结构生长相比，增强Bi在涂层中的结合。我们报道了在GaSb衬底上生长InPBi外延层，并研究了生长温度和Bi通量的变化如何影响其Bi掺入，结构和光学性质。Bi含量最高的合金InP0.973Bi0.027在GaSb衬底上完全松弛，生长温度为300℃，Bi通量为2×10−8 Torr。我们还给出了由多峰光致发光数据得出的InP0.973Bi0.027/GaSb异质结构的能带图。为了支持应变工程的概念，我们证明了在相同的生长条件下，该合金中的Bi浓度高于在InP衬底上合成的InPBi （InP0.988Bi0.012）。

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引用次数: 0

Low-resistance ohmic contacts on p-type homoepitaxial 3C-SiC by Al ion implantation with different metal structures 不同金属结构Al离子注入p型同外延3C-SiC的低电阻欧姆接触

IF 4.6 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing

Pub Date : 2025-12-25 DOI: 10.1016/j.mssp.2025.110373

Zheng Hu , Yidan Tang , Huaping Song , Xinhua Wang , Junwei Yang , Zesheng Zhang , Yun Bai , Songbo Guo , Kai Du , Xuan Li , Xiaoli Tian , Jilong Hao , Xinyu Liu

Research on p-type cubic silicon carbide (3C-SiC) ohmic contacts is scarce, with ion-implanted ones having a minimum specific contact resistance of only ∼10⁻³ Ω cm². This work reports fabrication and characterization of ohmic contacts on p-type homoepitaxial 3C-SiC by depositing Ni/Ti/Al and Ti/Ni/Al stacks on ion-implanted heavily doped p-type 3C-SiC epilayers, followed by post metallisation annealing. Surface morphology, electrical transport, and interface microstructure were systematically analyzed by atomic force microscopy (AFM), circular transmission line model (C-TLM), and focused ion beam-scanning electron microscope with energy dispersive x-ray spectroscopy (FIB-SEM/EDX), respectively. The extracted specific contact resistances were as low as 9.40 × 10⁻⁴ Ω cm², among the best reported values for implanted p-type 3C-SiC, achieved without post-ion-implantation standard annealing. Stacking order plays a crucial role: compared to Ti/Ni/Al, placing Ni adjacent to SiC directly forms silicides, reduces resistivity in shorter annealing time, enables more complete metal-metal and metal-semiconductor reactions to generate multi-layer low-resistivity compounds (e.g., Ni₂Si, Ni₃Al), which likely provide conductive paths for ohmic contact. This mechanism explains the observed low resistance and the dependence on annealing conditions and metal sequence.

对p型立方碳化硅（3C-SiC）欧姆触点的研究很少，离子注入的触点的最小比接触电阻仅为~ 10−3 Ω cm2。本文报道了通过在离子注入的重掺杂p型3C-SiC薄膜上沉积Ni/Ti/Al和Ti/Ni/Al堆叠，然后进行金属化后退火，制备和表征p型同外延3C-SiC的欧姆接触。采用原子力显微镜（AFM）、圆形传输线模型（C-TLM）和聚焦离子束扫描电子显微镜（fi - sem /EDX）对其表面形貌、电输运和界面微观结构进行了系统分析。所提取的比接触电阻低至9.40 × 10−4 Ω cm2，是离子注入p型3C-SiC的最佳报告值之一，无需离子注入后标准退火即可实现。堆叠顺序起着至关重要的作用：与Ti/Ni/Al相比，将Ni放置在SiC附近直接形成硅化物，在更短的退火时间内降低电阻率，使更完整的金属-金属和金属-半导体反应能够生成多层低电阻率化合物（例如Ni2Si， Ni3Al），这可能为欧姆接触提供导电路径。这一机制解释了观察到的低电阻和对退火条件和金属顺序的依赖。

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引用次数: 0

Effects of post-treatment progress on the morphology and surface state of 4H-SiC trenches 后处理工艺对4H-SiC沟槽形貌和表面状态的影响

IF 4.6 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing

Pub Date : 2025-12-25 DOI: 10.1016/j.mssp.2025.110386

Qin Hu, Jiamin Tian, Jun Du, Fang Su, Xixi Luo, Qizhi Li, Yidan Chen, Changrun Cai, Zhi Liu, Hongyan Liu, Wei Zeng, Kuang-Tse Ho

Accurately characterizing different regions of micro/nanoscale trenches and optimizing their surface and defect properties is a key goal for developing high-performance 4H-SiC trench devices. However, investigations into trench surface roughness and defects are constrained by limitations of conventional characterization tools. This study conducts in-depth investigations on three specific regions of the nanoscale trench—namely the top surface, the sidewall and the chamfer between the top surface and the sidewall—by means of Atomic Force Microscopy (AFM), Raman-coupled Photoluminescence (PL) spectroscopy and Scanning Electron Microscope (SEM). By analyzing the optimization effect of various post-treatments, the optimal annealing condition is identified as 1350 °C for 5 min under hydrogen (H₂) ambient, while a 10 nm sacrificial oxidation (SAC) treatment is sufficient to smooth the top and sidewall surface. By integrating Mullins’ Continuous Surface Model with the Arrhenius Equation, we systematically investigate the curvature radius of the chamfer as a function of annealing temperature and duration. The variation trend of the curvature radius is calculated and compared with experimental results, which confirms that the formation mechanism of the chamfer is dominated by surface diffusion. For the first time, PL spectroscopy has observed differences in the emission center at 670 nm between the trench sidewall and top surface. These variations are attributed to surface-associated point defects, which can be eliminated via H₂ annealing. The above conclusions provide critical technical support and theoretical basis for developing high-performance 4H-SiC trench devices.

准确表征微纳米沟槽的不同区域并优化其表面和缺陷特性是开发高性能4H-SiC沟槽器件的关键目标。然而，对沟槽表面粗糙度和缺陷的研究受到传统表征工具的限制。本研究利用原子力显微镜（AFM）、拉曼耦合光致发光光谱（PL）和扫描电子显微镜（SEM）对纳米尺度沟槽的三个特定区域——即顶表面、侧壁和顶表面与侧壁之间的倒角进行了深入的研究。通过分析各种后处理的优化效果，确定了最优的退火条件为1350℃，氢气（H2）环境下5 min，而10 nm的牺牲氧化（SAC）处理足以使顶部和侧壁表面光滑。通过将Mullins连续曲面模型与Arrhenius方程相结合，系统地研究了倒角曲率半径随退火温度和时间的变化规律。计算了曲率半径的变化趋势，并与实验结果进行了比较，证实了倒角的形成机制以表面扩散为主。利用PL光谱首次观测到沟槽侧壁和顶表面670 nm处发射中心的差异。这些变化归因于表面相关的点缺陷，可以通过H2退火消除。以上结论为开发高性能的4H-SiC沟槽器件提供了关键的技术支持和理论依据。

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