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Comprehensive analysis of bulk and (001) surface properties of the quaternary Heusler compound CoTiFeGe 全面分析四元 Heusler 化合物 CoTiFeGe 的块体和 (001) 表面特性
IF 4.2 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-11-19 DOI: 10.1016/j.mssp.2024.109120
M.Y. Raïâ, R. Masrour, M. Hamedoun, J. Kharbach, A. Rezzouk, N. Benzakour, K. Bouslykhane
The study investigates the CoTiFeGe quaternary Heusler alloy, focusing on its bulk structure with various ordering types and its (001) surface terminations of ∗CoFe and ∗TiGe. Employing density functional theory (DFT), researchers analyzed the material's properties. Calculations of elastic constants provided insights into the alloy's mechanical properties. Electronic structure analysis, specifically the density of states and band structure for XA-type ordering, revealed half-metallic characteristics. Using both GGA and mBJ-GGA methods, the study found band gaps of 0.490 eV and 0.982 eV, respectively, confirming the alloy's half-metallic nature. Surface analysis showed that the ∗CoFe-terminated (001) surface loses its half-metallic ferromagnetic character, while the ∗TiGe-terminated surface maintains complete spin polarization. This finding has significant implications for potential spintronic applications. Optical property investigations of both bulk and (001) surfaces supported the material's semiconducting nature. The primary optical reflections were observed in the visible and infrared regions, with minimal loss in the same spectral range. The presence of absorption in the (001) surface suggests potential applications in optoelectronics. Additionally, the research explored the alloy's thermoelectric properties by examining its transport coefficients.
该研究对 CoTiFeGe 四元 Heusler 合金进行了研究,重点是其具有各种有序类型的块体结构及其 ∗CoFe 和 ∗TiGe 的 (001) 表面终端。研究人员利用密度泛函理论(DFT)分析了这种材料的特性。通过对弹性常数的计算,研究人员深入了解了合金的机械性能。电子结构分析,特别是 XA 型有序的态密度和带结构,揭示了半金属特性。利用 GGA 和 mBJ-GGA 方法,研究发现带隙分别为 0.490 eV 和 0.982 eV,证实了合金的半金属性质。表面分析表明,以∗CoFe 结尾的 (001) 表面失去了半金属铁磁性,而以∗TiGe 结尾的表面则保持了完全的自旋极化。这一发现对潜在的自旋电子应用具有重要意义。对块体和(001)表面的光学特性研究证实了该材料的半导体性质。在可见光和红外区域观察到主要的光学反射,在相同光谱范围内的损耗极小。(001) 表面的吸收现象表明,该材料有可能应用于光电子领域。此外,研究还通过检测其传输系数,探索了合金的热电特性。
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引用次数: 0
Effect of calcination temperature on CeO2-based catalysts with enhanced photocatalytic degradation of phenol under UV light 煅烧温度对紫外光下增强苯酚光催化降解的 CeO2 基催化剂的影响
IF 4.2 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-11-18 DOI: 10.1016/j.mssp.2024.109123
L.A. Ramos-Huerta , Octavio Aguilar-Martínez , Yanet Piña-Pérez , Víctor Santes , Luis Lartundo Rojas , Francisco Tzompantzi , C.E. Santolalla-Vargas
This research delves into the photocatalytic degradation of phenol using CeO2 nanoparticles synthesized through solution combustion synthesis (SCS) at varying calcination temperatures (250, 300, 400, 500, and 600 °C). A comprehensive array of characterization techniques was employed, including XRD, FTIR, SEM-EDS, HR-TEM, N2 physisorption, UV–Vis DRS, Raman spectroscopy, and XPS. Our findings reveal a profound influence of calcination temperatures on the presence and quantity of Ce3+ and Ce4+ species, thereby modulating defective sites and surface area, crucial factors impacting performance. CeO2 synthesized at 400 °C stands out with a notable combination of high defects, extensive surface area, and a photocatalytic efficiency of 62 %. This work enhances our understanding of CeO2 photocatalysts for environmental applications and emphasizes the superior performance of mild calcination temperatures in ceria materials.
本研究深入探讨了在不同煅烧温度(250、300、400、500 和 600 °C)下使用溶液燃烧合成(SCS)法合成的 CeO2 纳米粒子对苯酚的光催化降解。我们采用了一系列全面的表征技术,包括 XRD、FTIR、SEM-EDS、HR-TEM、N2 物理吸附、UV-Vis DRS、拉曼光谱和 XPS。我们的研究结果表明,煅烧温度对 Ce3+ 和 Ce4+ 物种的存在和数量有着深远的影响,从而改变了缺陷位点和表面积这些影响性能的关键因素。在 400 °C 下合成的 CeO2 具有高缺陷、大表面积和 62% 的光催化效率等显著特点。这项研究加深了我们对用于环境应用的 CeO2 光催化剂的了解,并强调了温和煅烧温度对铈材料的优越性能。
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引用次数: 0
Ultra-high response and excellent selectivity of triethylamine gas sensor based on Co3O4-ZnO porous hierarchical heterostructure 基于 Co3O4-ZnO 多孔分层异质结构的三乙胺气体传感器具有超高响应和优异选择性
IF 4.2 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-11-17 DOI: 10.1016/j.mssp.2024.109127
Sanling Fu , Menghao Yin , Gaojie Li
In recent years, metal oxide semiconductor nanomaterials have been found important applications in the detection of volatile organic compounds (VOCs) due to their excellent gas-sensing properties. In this study, Co3O4-ZnO porous hierarchical heterostructure nanomaterial was synthesised via the facile hydrothermal route. The sensors prepared from pristine ZnO and Co3O4-ZnO composites exhibited excellent triethylamine sensing properties. The response value of pristine ZnO to 50 ppm triethylamine was 178 at 300 °C, while the response value of Co0.5 sensor reached 2036 under the same condition, and the response value of Co0.5 sensor was 2.6 in a 500 ppb triethylamine atmosphere. Meanwhile, the selectivity of Co3O4-ZnO sample was also significantly improved compared with pristine ZnO, and the obtained sensors had excellent repeatability and long-term stability. Therefore, the Co3O4-ZnO sensor in this work had potential applications in practicable triethylamine detection. Such an exceptional triethylamine sensing performance could be sourced from its unique porous hierarchical structure and the catalytic effect of the introduced Co3O4 on the surface reaction, as well as the synergistic effect of ZnO and Co3O4.
近年来,金属氧化物半导体纳米材料因其优异的气体传感特性,在挥发性有机化合物(VOC)检测中得到了重要应用。本研究通过简便的水热法合成了 Co3O4-ZnO 多孔分层异质结构纳米材料。原始 ZnO 和 Co3O4-ZnO 复合材料制备的传感器具有优异的三乙胺传感性能。原始 ZnO 在 300 ℃ 下对 50 ppm 三乙胺的响应值为 178,而 Co0.5 传感器在相同条件下的响应值达到了 2036,在 500 ppb 三乙胺气氛下,Co0.5 传感器的响应值为 2.6。同时,与原始 ZnO 相比,Co3O4-ZnO 样品的选择性也有显著提高,所获得的传感器具有良好的重复性和长期稳定性。因此,本研究中的 Co3O4-ZnO 传感器在实际的三乙胺检测中具有潜在的应用价值。独特的多孔分层结构、引入的 Co3O4 对表面反应的催化作用以及 ZnO 和 Co3O4 的协同效应,都是三乙胺传感器具有如此优异性能的原因。
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引用次数: 0
A high-performance flexible biopolymer-based Ce oxide composite electrolyte for lithium-ion battery dendrite reduction 用于减少锂离子电池枝晶的高性能柔性生物聚合物基氧化 Ce 复合电解质
IF 4.2 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-11-17 DOI: 10.1016/j.mssp.2024.109101
M. Leo Edward , M. Roselin Ranjitha , G. Thennarasu , E. Ranjith Kumar , A.F. Abd El-Rehim , V. Jaisankar
We propose a novel solid-state composite polymer electrolyte (CPE) that includes Li7La2.5Ce0.5Zr2O12 (Ce-LLZO), chitosan (CS)/agar-agar (AA) polymer, polyethylene glycol (PEG) plasticizer, and LiClO4 salt. At 25 °C, the CPE3 formulation, consisting of 15 wt% Ce-LLZO, 60 wt% CS-AA, 15 wt% PEG, and 10 wt% LiClO4, demonstrated exceptional lithium (Li)-ion conductivity of 5.18 × 10-3 S cm−1 and an optimal transference number (TLi+) of 0.937. We assessed the electrochemical stability of CPE3 using linear sweep voltammetry, which revealed a maximum stability limit of 4.1 V (versus Li/Li+). In addition, the coin cell made with the Li||CPE3||NMC configuration had an amazing discharge capacity of 163 mAhg-1 and stayed stable for up to 100 cycles at 0.1 °C in room temperature. Conversely, when subjected to Li-plating/stripping cycles, the symmetric Li||CPE3||Li cell exhibited stability for 550 h and maintained a current density of 2.0 mA cm−2. Compared to Li-metal, the proposed material exhibited reduced overpotential while simultaneously enhancing electrochemical stability.
我们提出了一种新型固态复合聚合物电解质 (CPE),其中包括 Li7La2.5Ce0.5Zr2O12 (Ce-LLZO)、壳聚糖 (CS) /琼脂糖 (AA) 聚合物、聚乙二醇 (PEG) 增塑剂和 LiClO4 盐。在 25 °C 时,由 15 wt% Ce-LLZO、60 wt% CS-AA、15 wt% PEG 和 10 wt% LiClO4 组成的 CPE3 配方显示出卓越的锂(Li)离子电导率(5.18 × 10-3 S cm-1)和最佳转移数(TLi+)(0.937)。我们使用线性扫描伏安法评估了 CPE3 的电化学稳定性,结果显示其最大稳定性极限为 4.1 V(相对于 Li/Li+)。此外,采用锂||CPE3||NMC 配置制造的纽扣电池的放电容量达到了惊人的 163 mAhg-1,并且在室温 0.1 °C 下可稳定循环 100 次。相反,当进行锂离子电镀/剥离循环时,对称锂||CPE3||锂电池表现出 550 h 的稳定性,并保持 2.0 mA cm-2 的电流密度。与锂金属相比,所提出的材料降低了过电位,同时提高了电化学稳定性。
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引用次数: 0
First-principles study of structural, electronic and optical properties of non-toxic RbBaX3 (X = F, Cl, Br, I) perovskites under hydrostatic pressure 静水压力下无毒 RbBaX3(X = F、Cl、Br、I)包晶的结构、电子和光学特性的第一性原理研究
IF 4.2 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-11-16 DOI: 10.1016/j.mssp.2024.109109
Pranti Saha , In Jun Park , Protik Das , Fariborz Kargar
We have investigated the structural, mechanical, electronic and optical properties of Rb-based cubic perovskite RbBaX3 (X = F, Cl, Br, I) under hydrostatic pressure, using first-principle density functional theory (DFT). All RbBaX3 perovskites exhibit thermodynamic and mechanical stability at ambient pressure. RbBaF3 remains structurally stable across all examined pressures, while RbBaCl3, RbBaBr3, and RbBaI3 maintain mechanical stability up to 60, 60, and 40 GPa, respectively. These materials are ductile even at elevated pressure. RbBaF3 has a direct bandgap of 4.80 eV while other compositions exhibit indirect band gaps of 4.37, 3.73, and 3.24 eV with halide atoms of Cl, Br, and I, respectively. Under elevated hydrostatic pressure, only RbBaCl3 and RbBaI3 exhibit an indirect-to-direct band transition while others preserve their nature of band gap. Our results show that spin–orbit coupling significantly affects only the valance bands of larger-sized halides (Cl, Br, I). With hybrid functional (HSE) correction, the band gaps of these four materials increase to 6.7, 5.6, 4.8 and 4.4 eV, respectively, but the nature of direct/indirect band transition remains unchanged. Orbital-decomposed partial density of states calculation reveals that the halogen p-orbitals dominate the valence band near the Fermi level, while Rb 5s-orbital affects the conduction band minima the most. Investigation of the optical properties reveals wide-band absorption, low electron loss, moderate reflectivity and lower refractive index in the UV to deep-UV range. The strength and range of absorption increases significantly with hydrostatic pressure, suggesting that RbBaX3 perovskites are promising candidates for tunable UV-absorbing optoelectronic devices.
我们利用第一原理密度泛函理论(DFT)研究了铷基立方包晶 RbBaX3(X = F、Cl、Br、I)在静水压力下的结构、机械、电子和光学特性。所有 RbBaX3 包晶在环境压力下都表现出热力学和机械稳定性。RbBaF3 在所有考察压力下都保持结构稳定,而 RbBaCl3、RbBaBr3 和 RbBaI3 则分别在 60、60 和 40 GPa 压力下保持机械稳定性。这些材料即使在高压下也具有延展性。RbBaF3 的直接带隙为 4.80 eV,而其他成分的间接带隙分别为 4.37、3.73 和 3.24 eV,卤化原子为 Cl、Br 和 I。在静水压升高的情况下,只有 RbBaCl3 和 RbBaI3 出现了间接带隙向直接带隙的转变,而其他成分则保持了它们的带隙性质。我们的研究结果表明,自旋轨道耦合只对较大尺寸的卤化物(Cl、Br、I)的价带有显著影响。经过混合函数(HSE)校正后,这四种材料的带隙分别增加到 6.7、5.6、4.8 和 4.4 eV,但直接/间接带转变的性质保持不变。轨道分解的部分状态密度计算显示,卤素 p 轨道在费米级附近的价带中占主导地位,而掺铒 5s 轨道对导带最小值的影响最大。对光学特性的研究表明,在紫外到深紫外范围内,该物质具有宽带吸收、低电子损耗、中等反射率和较低折射率。吸收的强度和范围随着静水压力的增加而显著增加,这表明 RbBaX3 包晶石有望成为可调紫外吸收光电器件的候选材料。
{"title":"First-principles study of structural, electronic and optical properties of non-toxic RbBaX3 (X = F, Cl, Br, I) perovskites under hydrostatic pressure","authors":"Pranti Saha ,&nbsp;In Jun Park ,&nbsp;Protik Das ,&nbsp;Fariborz Kargar","doi":"10.1016/j.mssp.2024.109109","DOIUrl":"10.1016/j.mssp.2024.109109","url":null,"abstract":"<div><div>We have investigated the structural, mechanical, electronic and optical properties of Rb-based cubic perovskite RbBaX<span><math><msub><mrow></mrow><mrow><mn>3</mn></mrow></msub></math></span> (X = F, Cl, Br, I) under hydrostatic pressure, using first-principle density functional theory (DFT). All RbBaX<span><math><msub><mrow></mrow><mrow><mn>3</mn></mrow></msub></math></span> perovskites exhibit thermodynamic and mechanical stability at ambient pressure. RbBaF<span><math><msub><mrow></mrow><mrow><mn>3</mn></mrow></msub></math></span> remains structurally stable across all examined pressures, while RbBaCl<span><math><msub><mrow></mrow><mrow><mn>3</mn></mrow></msub></math></span>, RbBaBr<span><math><msub><mrow></mrow><mrow><mn>3</mn></mrow></msub></math></span>, and RbBaI<span><math><msub><mrow></mrow><mrow><mn>3</mn></mrow></msub></math></span> maintain mechanical stability up to 60, 60, and 40 GPa, respectively. These materials are ductile even at elevated pressure. RbBaF<span><math><msub><mrow></mrow><mrow><mn>3</mn></mrow></msub></math></span> has a direct bandgap of 4.80 eV while other compositions exhibit indirect band gaps of 4.37, 3.73, and 3.24 eV with halide atoms of Cl, Br, and I, respectively. Under elevated hydrostatic pressure, only RbBaCl<span><math><msub><mrow></mrow><mrow><mn>3</mn></mrow></msub></math></span> and RbBaI<span><math><msub><mrow></mrow><mrow><mn>3</mn></mrow></msub></math></span> exhibit an indirect-to-direct band transition while others preserve their nature of band gap. Our results show that spin–orbit coupling significantly affects only the valance bands of larger-sized halides (Cl, Br, I). With hybrid functional (HSE) correction, the band gaps of these four materials increase to 6.7, 5.6, 4.8 and 4.4 eV, respectively, but the nature of direct/indirect band transition remains unchanged. Orbital-decomposed partial density of states calculation reveals that the halogen <em>p</em>-orbitals dominate the valence band near the Fermi level, while Rb 5<em>s</em>-orbital affects the conduction band minima the most. Investigation of the optical properties reveals wide-band absorption, low electron loss, moderate reflectivity and lower refractive index in the UV to deep-UV range. The strength and range of absorption increases significantly with hydrostatic pressure, suggesting that RbBaX<span><math><msub><mrow></mrow><mrow><mn>3</mn></mrow></msub></math></span> perovskites are promising candidates for tunable UV-absorbing optoelectronic devices.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"187 ","pages":"Article 109109"},"PeriodicalIF":4.2,"publicationDate":"2024-11-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142661852","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Atomic position dependent structural, electronic, mechanical and optical properties of ZnSbF3 fluoroperovskites 与原子位置相关的 ZnSbF3 氟共晶的结构、电子、机械和光学特性
IF 4.2 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-11-16 DOI: 10.1016/j.mssp.2024.109065
Tanmoy Kumar Ghosh , M.N.H. Liton , Arpon Chakraborty , M.K.R. Khan , M.S.I. Sarker
In this study, we have investigated the structural, electronic, mechanical, and optical properties of ZnSbF3-I and ZnSbF3-II by altering the position of Zn and Sb through density functional theory (DFT) for the first time. The structural stability of both structures was confirmed by calculating formation enthalpy. A remarkable phenomenon has been observed from the electronic band structures analysis, whenever altering the atomic of Zn and Sb, which leads to a transition from semiconducting, ZnSbF3-I to metallic, ZnSbF3-II conductivity. The obtained bandgap value of ZnSbF3-I is of the order of 0.97 eV with indirect transition and the spin-orbit coupling (SOC) effect reduced the band gap energy to 0.49 eV. Density of states (DOS) curves revealed that the Sb-5p state is mainly responsible for this phase transition. The estimated elastic constants suggested that both phases are mechanically stable. By assessing the different elastic parameters, it can be concluded that both phases are mechanically ductile, machinable, isotropic, and soft in nature. A large value of bulk modulus for ZnSbF3-II indicates that it is harder and cannot be compressed as easily as ZnSbF3-I. The structures exhibit high efficiency in absorbing UV light. ZnSbF3-II's strong reflectivity in the infrared spectrum makes it an option to use for IR shielding. This study will guide further theoretical and experimental investigation.
在这项研究中,我们首次通过密度泛函理论(DFT)改变了 Zn 和 Sb 的位置,研究了 ZnSbF3-I 和 ZnSbF3-II 的结构、电子、机械和光学特性。通过计算形成焓,证实了这两种结构的稳定性。从电子能带结构分析中观察到一个显著的现象,只要改变 Zn 和 Sb 的原子位置,就会导致导电性从半导体 ZnSbF3-I 过渡到金属 ZnSbF3-II。通过间接转变获得的 ZnSbF3-I 带隙值为 0.97 eV,而自旋轨道耦合(SOC)效应将带隙能降低到 0.49 eV。状态密度(DOS)曲线显示,Sb-5p 状态是这一相变的主要原因。估算的弹性常数表明,这两种相态都具有机械稳定性。通过评估不同的弹性参数,可以得出结论:这两种相都具有机械延展性、可加工性、各向同性和柔软性。ZnSbF3-II 的体积模量值较大,表明其硬度较高,不能像 ZnSbF3-I 那样容易压缩。这些结构在吸收紫外线方面表现出很高的效率。ZnSbF3-II 在红外光谱中具有很强的反射性,因此可用于红外屏蔽。这项研究将为进一步的理论和实验研究提供指导。
{"title":"Atomic position dependent structural, electronic, mechanical and optical properties of ZnSbF3 fluoroperovskites","authors":"Tanmoy Kumar Ghosh ,&nbsp;M.N.H. Liton ,&nbsp;Arpon Chakraborty ,&nbsp;M.K.R. Khan ,&nbsp;M.S.I. Sarker","doi":"10.1016/j.mssp.2024.109065","DOIUrl":"10.1016/j.mssp.2024.109065","url":null,"abstract":"<div><div>In this study, we have investigated the structural, electronic, mechanical, and optical properties of ZnSbF<sub>3</sub>-I and ZnSbF<sub>3</sub>-II by altering the position of Zn and Sb through density functional theory (DFT) for the first time. The structural stability of both structures was confirmed by calculating formation enthalpy. A remarkable phenomenon has been observed from the electronic band structures analysis, whenever altering the atomic of Zn and Sb, which leads to a transition from semiconducting, ZnSbF<sub>3</sub>-I to metallic, ZnSbF<sub>3</sub>-II conductivity. The obtained bandgap value of ZnSbF<sub>3</sub>-I is of the order of 0.97 eV with indirect transition and the spin-orbit coupling (SOC) effect reduced the band gap energy to 0.49 eV. Density of states (DOS) curves revealed that the Sb-<em>5p</em> state is mainly responsible for this phase transition. The estimated elastic constants suggested that both phases are mechanically stable. By assessing the different elastic parameters, it can be concluded that both phases are mechanically ductile, machinable, isotropic, and soft in nature. A large value of bulk modulus for ZnSbF<sub>3</sub>-II indicates that it is harder and cannot be compressed as easily as ZnSbF<sub>3</sub>-I. The structures exhibit high efficiency in absorbing UV light. ZnSbF<sub>3</sub>-II's strong reflectivity in the infrared spectrum makes it an option to use for IR shielding. This study will guide further theoretical and experimental investigation.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"187 ","pages":"Article 109065"},"PeriodicalIF":4.2,"publicationDate":"2024-11-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142661942","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Characterization of machined surface in semi-conductive SiC wafer subjected to micro-EDM drilling 微电火花钻孔加工半导电碳化硅晶片表面的特征
IF 4.2 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-11-15 DOI: 10.1016/j.mssp.2024.109118
Hoang-Tien Cao, Jeng-Rong Ho, Pi-Cheng Tung, Hai-Ping Tsui, Chih-Kuang Lin
Semi-conductive silicon carbide (semi-SiC) wafers are essential in the semiconductor industry, but their high hardness and brittleness make traditional machining difficult. Electric discharge machining (EDM) is an alternative method for machining semi-SiC wafer. This study investigates the effects of discharge energy parameters, such as pulse-on time and peak current, on the surface and subsurface characteristics of semi-SiC wafers subjected to micro-EDM drilling. The machined surface and subsurface morphology and microstructure were characterized using scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDS), X-ray photoelectron spectroscopy (XPS), and transmission electron microscopy (TEM). SEM micrographs revealed the presence of craters, resolidified material, cracks, and micro-pores on the machined surface, influenced by the thermal energy generated during the EDM process. The material removal mechanisms identified include melting, vaporization, spalling, and oxidation. EDS analyses indicated a larger discharge energy led to an increase in carbon and oxygen concentrations on the machined surfaces, likely due to the decomposition of SiC and oxidation during EDM. XPS analysis identified the presence of graphite, SiO2, Cu particles, Cu2O, and CuO on the machined surface. TEM micrographs revealed three distinct regions in the subsurface, namely a recast layer, a heat-affected zone (HAZ), and the unaffected bulk SiC. These layers exhibited different microstructures, with the thickness of the recast layer and HAZ being dependent on the discharge energy. This study highlights the advantages of micro-EDM over other techniques, achieving a thin recast layer and minimal HAZ, thereby preserving the surface and subsurface integrity of the semi-SiC wafer.
半导电碳化硅(semi-SiC)晶片是半导体工业中不可或缺的材料,但由于其硬度高、脆性大,传统的加工方法很难加工。放电加工(EDM)是加工半碳化硅晶片的一种替代方法。本研究探讨了脉冲接通时间和峰值电流等放电能量参数对微电火花钻孔加工半 SiC 晶圆表面和亚表面特性的影响。使用扫描电子显微镜 (SEM)、能量色散 X 射线光谱 (EDS)、X 射线光电子能谱 (XPS) 和透射电子显微镜 (TEM) 对加工表面和次表面形态及微观结构进行了表征。扫描电镜显微照片显示,受电火花加工过程中产生的热能影响,加工表面出现了凹坑、分解材料、裂纹和微孔。材料去除机制包括熔化、汽化、剥落和氧化。EDS 分析表明,放电能量越大,加工表面的碳和氧浓度就越高,这可能是由于电火花加工过程中碳化硅的分解和氧化作用造成的。XPS 分析确定了加工表面存在石墨、SiO2、铜颗粒、Cu2O 和 CuO。TEM 显微照片显示了次表面的三个不同区域,即再铸层、热影响区 (HAZ) 和未受影响的整体 SiC。这些层表现出不同的微观结构,重铸层和热影响区的厚度取决于放电能量。与其他技术相比,这项研究凸显了微型放电加工的优势,即可以获得较薄的再铸层和最小的热影响区,从而保持半碳化硅晶片表面和次表面的完整性。
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引用次数: 0
Nonlinear and linear conductance modulation and synaptic plasticity in stable tin-zinc oxide based-memristor for neuro-inspired computing 用于神经启发计算的基于稳定锡锌氧化物的晶闸管中的非线性和线性电导调制与突触可塑性
IF 4.2 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-11-15 DOI: 10.1016/j.mssp.2024.109111
Rajwali Khan , Shahid Iqbal , Fazal Raziq , Pardha Saradhi Maram , Sabyasachi Chakrabortty , Sambasivam Sangaraju
Inducing post-transition metals in an oxide semiconductor system has a high potential for use in storage for neuromorphic computing. It is challenging to find a material that can be switched stably between multiple resistance states. This research explores the memristive properties of Sn (post-transition metal)-doped ZnO (SZO) thin films, emphasizing their application in memristor devices. The (magnetron sputtered) synthesized SZO thin films in the form of Ag/SZO/Au/Ti/SiO₂ device demonstrated a clear bipolar resistive switching (BRS) behavior with VSET and VRESET of 1.0 V and −0.75 V, respectively. The memristor could change between a high resistance state and a low resistance state with a high RON/OFF rate of 104, mimicking synaptic behaviors such as potentiation and depression. This switching is attributed to the formation and dissolution of Ag filaments within the SZO layer, influenced by the migration of Ag⁺ ions and the presence of oxygen vacancies. These vacancies facilitate the formation of conductive filaments under positive bias and their dissolution under negative bias. The endurance and retention tests showed stable switching characteristics, with the memristor maintaining distinct HRS and LRS over 100 cycles and retaining these states for over 5K seconds without significant degradation. Finally, the nonlinearity values for potentiation and depression were αp∼1.6 and αd ∼ -0.14, suggesting that the memristor may be more responsive to increasing synaptic weights in biological systems. The linearity response at a very small pulse width showed the device is more applicable for neuromorphic applications. The observed memristor combined with stable endurance and retention performance, suggests that this memristor structure could play a crucial role in the development of artificial synapses and memory technologies.
在氧化物半导体系统中诱导跃迁后金属极有可能用于神经形态计算的存储。要找到一种能在多种电阻状态之间稳定切换的材料具有挑战性。本研究探讨了掺杂锡(过渡后金属)的氧化锌(SZO)薄膜的忆阻特性,重点是其在忆阻器设备中的应用。以Ag/SZO/Au/Ti/SiO₂器件形式合成的(磁控溅射)SZO薄膜表现出明显的双极电阻开关(BRS)行为,其VSET和VRESET分别为1.0 V和-0.75 V。忆阻器可以在高阻态和低阻态之间以 104 的高 RON/OFF 率变化,模拟突触行为(如电位和抑制)。这种切换归因于 SZO 层内银丝的形成和溶解,受到银离子迁移和氧空位存在的影响。这些空位有助于在正偏压下形成导电丝,并在负偏压下溶解。耐久性和保持力测试显示了稳定的开关特性,忆阻器在 100 个周期内保持了不同的 HRS 和 LRS 状态,并在 5K 秒以上的时间内保持这些状态,没有出现明显的衰减。最后,电位增强和抑制的非线性值分别为αp∼1.6和αd∼-0.14,表明忆阻器可能对生物系统中突触权重的增加反应更灵敏。极小脉宽下的线性响应表明,该器件更适用于神经形态应用。观察到的忆阻器具有稳定的耐久性和保持性能,这表明这种忆阻器结构可能在人工突触和记忆技术的发展中发挥关键作用。
{"title":"Nonlinear and linear conductance modulation and synaptic plasticity in stable tin-zinc oxide based-memristor for neuro-inspired computing","authors":"Rajwali Khan ,&nbsp;Shahid Iqbal ,&nbsp;Fazal Raziq ,&nbsp;Pardha Saradhi Maram ,&nbsp;Sabyasachi Chakrabortty ,&nbsp;Sambasivam Sangaraju","doi":"10.1016/j.mssp.2024.109111","DOIUrl":"10.1016/j.mssp.2024.109111","url":null,"abstract":"<div><div>Inducing post-transition metals in an oxide semiconductor system has a high potential for use in storage for neuromorphic computing. It is challenging to find a material that can be switched stably between multiple resistance states. This research explores the memristive properties of Sn (post-transition metal)-doped ZnO (SZO) thin films, emphasizing their application in memristor devices. The (magnetron sputtered) synthesized SZO thin films in the form of Ag/SZO/Au/Ti/SiO₂ device demonstrated a clear bipolar resistive switching (BRS) behavior with V<sub>SET</sub> and V<sub>RESET</sub> of 1.0 V and −0.75 V, respectively. The memristor could change between a high resistance state and a low resistance state with a high R<sub>ON/OFF</sub> rate of 10<sup>4</sup>, mimicking synaptic behaviors such as potentiation and depression. This switching is attributed to the formation and dissolution of Ag filaments within the SZO layer, influenced by the migration of Ag⁺ ions and the presence of oxygen vacancies. These vacancies facilitate the formation of conductive filaments under positive bias and their dissolution under negative bias. The endurance and retention tests showed stable switching characteristics, with the memristor maintaining distinct HRS and LRS over 100 cycles and retaining these states for over 5K seconds without significant degradation. Finally, the nonlinearity values for potentiation and depression were α<sub>p</sub>∼1.6 and α<sub>d</sub> ∼ -0.14, suggesting that the memristor may be more responsive to increasing synaptic weights in biological systems. The linearity response at a very small pulse width showed the device is more applicable for neuromorphic applications. The observed memristor combined with stable endurance and retention performance, suggests that this memristor structure could play a crucial role in the development of artificial synapses and memory technologies.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"186 ","pages":"Article 109111"},"PeriodicalIF":4.2,"publicationDate":"2024-11-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142651251","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The effect of PBEsol GGA and mBJ potentials on the structural, electronic, optical, elastic and thermoelectric properties of A2BAuI6 (A = K or Rb or Cs, B = Sc or Y) PBEsol GGA 和 mBJ 电位对 A2BAuI6(A = K 或 Rb 或 Cs,B = Sc 或 Y)结构、电子、光学、弹性和热电性能的影响
IF 4.2 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-11-15 DOI: 10.1016/j.mssp.2024.109116
Nabeel Israr , Muhammad Awais Jehangir , Ammar M. Tighezza , Shamim Khan , G. Murtaza , Muhammad Saeed
Perovskites systems are leading the photovoltaic technology now a days. For the consistent renewable energy applications new materials required with the desirable properties. In this work six new materials are being predicted which may be very useful for the renewable energy applications. The full potential scheme of linearized augmented plane wave with the local orbitals is used for the calculations with the PBEsol GGA and mBJ potentials for the exchange-correlation effects. The structural and elastic parameters of A2BAuI6 (A = K or Rb or Cs, B = Sc or Y) are computed, and the responses exhibits that such compounds are stable, have a ductile nature, and are described by a high elastic anisotropy. The bandgaps were identified via the electrical band structure computations for A2BAuI6 (A = K, Rb, Cs; B = Sc or Y) compounds as 1.25 eV, 1.64 eV, 1.24 eV, 1.62 eV, 1.25 eV and 2.04 eV with TB-mBJ + SOC approach. The calculated compounds have much dispersion in their bands and minimal carrier effective mass. Lattice thermal conductivity (KL) is computed via Slack's equation for all computed compounds are 0.29 × 1014 W/mK, 0.31 × 1014 W/mK, 0.29 × 1014 W/mK, 0.31 × 1014 W/mK, 0.39 × 1014 W/mK and 0.29 × 1014 W/mK, indicating a promising future for thermoelectric uses. The calculation of thermoelectric parameters, including the power factor, Seebeck coefficient, and figure of merit, serves another prospective purpose and confirms the potential high use of these materials in thermoelectric devices. Likewise, acceptable quality characteristics like long diffusion length, tunable band-gap, high mobility, am-bipolar charge transport, and high absorption reinforce these compounds which make them even more suitable for photovoltaic applications.
如今,透镜系统在光伏技术领域处于领先地位。为了实现可再生能源的持续应用,需要具有理想特性的新材料。本研究预测了六种可能对可再生能源应用非常有用的新材料。计算中使用了线性化增强平面波与局部轨道的全势垒方案,并使用 PBEsol GGA 和 mBJ 势垒来计算交换相关效应。计算了 A2BAuI6(A = K 或 Rb 或 Cs,B = Sc 或 Y)的结构和弹性参数,结果表明此类化合物稳定、具有韧性,并具有较高的弹性各向异性。利用 TB-mBJ + SOC 方法,通过对 A2BAuI6(A = K、Rb、Cs;B = Sc 或 Y)化合物的电带结构计算,确定其带隙分别为 1.25 eV、1.64 eV、1.24 eV、1.62 eV、1.25 eV 和 2.04 eV。计算出的化合物在其带中具有很大的分散性和最小的载流子有效质量。通过 Slack 方程计算出的所有计算化合物的晶格热导率(KL)分别为 0.29 × 1014 W/mK、0.31 × 1014 W/mK、0.29 × 1014 W/mK、0.31 × 1014 W/mK、0.39 × 1014 W/mK 和 0.29 × 1014 W/mK,这表明热电用途前景广阔。热电参数的计算,包括功率因数、塞贝克系数和优点系数,也是为了达到另一个预期目的,并证实了这些材料在热电设备中的潜在高用途。同样,长扩散长度、可调带隙、高迁移率、am-双极电荷传输和高吸收等可接受的质量特性也加强了这些化合物,使其更适合光伏应用。
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引用次数: 0
Formation of tunable diamond micro- and nanopillars for field effect enhancement applications 形成用于场效应增强应用的可调金刚石微柱和纳米柱
IF 4.2 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-11-15 DOI: 10.1016/j.mssp.2024.109119
Dylan M. Evans, Clint D. Frye
We developed a process for the fabrication of tunable single crystal diamond micro- and nanopillars, with tip widths ranging from 40 to 460 nm, densities ranging from 0.5 to 53.5 pillars/μm2, and heights greater than 4.5 μm. A self-assembled Au nanodot ensemble etch mask was formed from an annealed Au thin film. The nanodot diameter and density can be tuned using the initial film thickness. The pillars were etched from the nanodot mask using an RIE O2 plasma, which has infinite selectivity for the diamond when applied at low RF powers (50 W). Finally, the pillars can be sharpened to ∼40 nm tip widths by annealing in air at 650 °C. These pillars can be used for applications such as field effect enhancement of diamond photocathode devices, enhancement of optical emission from N-V centers, and antireflective coatings.
我们开发了一种制造可调单晶金刚石微柱和纳米柱的工艺,其顶端宽度为 40 至 460 nm,密度为 0.5 至 53.5 个金刚石柱/μm2,高度大于 4.5 μm。退火金薄膜形成了自组装金纳米点集合蚀刻掩模。纳米点的直径和密度可通过初始薄膜厚度进行调整。使用 RIE O2 等离子体从纳米点掩模中蚀刻出金刚石柱,该等离子体在低射频功率(50 W)下对金刚石具有无限的选择性。最后,通过在 650 °C 的空气中退火,可将金刚石柱锐化至 40 nm 的尖端宽度。这些金刚石柱可用于金刚石光电阴极器件的场效应增强、N-V 中心光发射增强和抗反射涂层等应用。
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引用次数: 0
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Materials Science in Semiconductor Processing
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