Pub Date : 2025-12-24DOI: 10.1016/j.mssp.2025.110372
Vance Liu , Yan-Sen Liao , Esan Chang , Chien-Ming Chen , Chong Leong Gan , Jenn-Ming Song
As the electronic industry advances toward greater innovation, environmental sustainability, and cost efficiency, low temperature solders (LTS) have garnered significant interest. This study evaluates the reliability and mechanical performance of hybrid solder joints formed by combining LTS solder paste with lead-free SACQ solder balls. Temperature cycling (TC) tests were conducted using two thermal profiles, TC-J (0–100 °C) and TC-N (-45-85 °C) following JEDEC JESD22-B111A standards. In the experiment, 3 types of hybrid-LTS joints were compared with homogenous SAC solder joints in terms of thermal fatigue life and failure modes. Results indicate that homogenous SAC solder joint performs higher fatigue life than hybrid-LTS solder joint. Failure analysis revealed two types of failure modes: solder/intermetallic compound (IMC) cracking at Bi-rich region, and Cu trace cracking near pad corners. The study also quantifies Bi mixing % and assesses mechanical shear test of all test vehicles after reaching 14K thermal cycles. Overall, the reliability performance of the three hybrid-LTS solder joints and the homogenous SAC joint was compared in terms of shearing force, failure modes, and TC reliability.
{"title":"Study of solder joint reliability performance and component shear Property of hybrid low temperature solder joints","authors":"Vance Liu , Yan-Sen Liao , Esan Chang , Chien-Ming Chen , Chong Leong Gan , Jenn-Ming Song","doi":"10.1016/j.mssp.2025.110372","DOIUrl":"10.1016/j.mssp.2025.110372","url":null,"abstract":"<div><div>As the electronic industry advances toward greater innovation, environmental sustainability, and cost efficiency, low temperature solders (LTS) have garnered significant interest. This study evaluates the reliability and mechanical performance of hybrid solder joints formed by combining LTS solder paste with lead-free SACQ solder balls. Temperature cycling (TC) tests were conducted using two thermal profiles, TC-J (0–100 °C) and TC-N (-45-85 °C) following JEDEC JESD22-B111A standards. In the experiment, 3 types of hybrid-LTS joints were compared with homogenous SAC solder joints in terms of thermal fatigue life and failure modes. Results indicate that homogenous SAC solder joint performs higher fatigue life than hybrid-LTS solder joint. Failure analysis revealed two types of failure modes: solder/intermetallic compound (IMC) cracking at Bi-rich region, and Cu trace cracking near pad corners. The study also quantifies Bi mixing % and assesses mechanical shear test of all test vehicles after reaching 14K thermal cycles. Overall, the reliability performance of the three hybrid-LTS solder joints and the homogenous SAC joint was compared in terms of shearing force, failure modes, and TC reliability.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"205 ","pages":"Article 110372"},"PeriodicalIF":4.6,"publicationDate":"2025-12-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145841064","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-12-23DOI: 10.1016/j.mssp.2025.110379
Fang Xie , Wei Hong , Tingyu Liu , Yu Ren , Ning Meng
Potassium dihydrogen phosphate (KDP) crystal is a critical material for frequency conversion and electro-optic switching in high-power laser systems, where its laser-induced damage threshold (LIDT) fundamentally limits the overall performance. The microscopic impact of interstitial titanium (Ti) impurities on the properties of KDP crystals is probed in this study through a comprehensive first-principles analysis of their thermodynamic stability, electronic structures, and optical characteristics. By analyzing the defect formation energy, it can be found that the defect is the most stable in all charged Ti interstitial defect. This defect not only has a significant impact on the H-O bonds but also introduces spin-asymmetric defect levels within the band gap. Calculations of the optical properties further reveal that absorption features induced by the Ti interstitial defect in the visible-UV spectrum give rise to a degradation in the crystal's resistance to laser-induced damage.
{"title":"First-principles study on the Ti interstitial defects in potassium dihydrogen phosphate crystals","authors":"Fang Xie , Wei Hong , Tingyu Liu , Yu Ren , Ning Meng","doi":"10.1016/j.mssp.2025.110379","DOIUrl":"10.1016/j.mssp.2025.110379","url":null,"abstract":"<div><div>Potassium dihydrogen phosphate (KDP) crystal is a critical material for frequency conversion and electro-optic switching in high-power laser systems, where its laser-induced damage threshold (LIDT) fundamentally limits the overall performance. The microscopic impact of interstitial titanium (Ti) impurities on the properties of KDP crystals is probed in this study through a comprehensive first-principles analysis of their thermodynamic stability, electronic structures, and optical characteristics. By analyzing the defect formation energy, it can be found that the <span><math><mrow><msubsup><mtext>Ti</mtext><mi>i</mi><mrow><mo>…</mo><mo>.</mo></mrow></msubsup></mrow></math></span> defect is the most stable in all charged Ti interstitial defect. This defect not only has a significant impact on the H-O bonds but also introduces spin-asymmetric defect levels within the band gap. Calculations of the optical properties further reveal that absorption features induced by the Ti interstitial defect in the visible-UV spectrum give rise to a degradation in the crystal's resistance to laser-induced damage.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"205 ","pages":"Article 110379"},"PeriodicalIF":4.6,"publicationDate":"2025-12-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145841066","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-12-22DOI: 10.1016/j.mssp.2025.110368
Shwetha Sunil Kumar , H. Renuka , Mohin Sharma , Bibhudutta Rout , Sanjit K. Ghose , B. Reeja-Jayan
Gallium nitride (GaN) has recently emerged as a preferred choice of material for high-power, high-frequency applications, including high electron mobility transistors (HEMTs), which are primarily used in satellites and other military systems deployed in space. However, the reliable operation of these devices depends upon the structural stability of the constituent GaN on exposure to energetic radiations present in space. In this study, we investigate the impact of 2 MeV proton irradiation on GaN films. Samples were irradiated at three fluence levels – 1x1011 cm−2, 1x1013 cm−2, and 1x1015 cm−2 and analyzed via high-resolution X-ray diffraction (HR-XRD) techniques. We observe via rocking curves (RCs) that the dislocation density decreases with increasing fluence, indicating that irradiation-induced annealing is occurring. This is further corroborated by symmetric and asymmetric reciprocal space maps (RSMs), which show a decrease in the spread of the lattice points after exposure to radiation. Additionally, we observe that the c-lattice parameter decreases with increasing fluence while the a-lattice parameter exhibits an opposite trend, resulting in an overall increase in the unit cell volume. Raman spectroscopy was used to probe in-plane strain through shifts in the E2(high) phonon mode. These results provide insights into the behavior of proton-irradiated GaN, further underscoring its potential as a radiation-tolerant material. The observed annealing can also be correlated with the electronic properties of GaN in future studies, thereby aiding in the development of more efficient devices.
氮化镓（GaN）最近成为高功率，高频应用的首选材料，包括高电子迁移率晶体管（hemt），主要用于卫星和其他部署在太空中的军事系统。然而，这些装置的可靠运行取决于GaN成分暴露于空间中存在的高能辐射时的结构稳定性。在这项研究中，我们研究了2 MeV质子辐照对GaN薄膜的影响。样品以三种辐照水平（1x1011 cm - 2、1x1013 cm - 2和1x1015 cm - 2）辐照，并通过高分辨率x射线衍射（HR-XRD）技术进行分析。通过摇摆曲线（RCs）观察到，位错密度随影响的增加而减小，表明辐照退火发生了。对称和非对称互易空间图（rsm）进一步证实了这一点，表明暴露于辐射后晶格点的扩散减少。此外，我们观察到c-晶格参数随着影响的增加而减小，而a-晶格参数则呈现相反的趋势，导致单位胞体积整体增加。拉曼光谱通过E2（高）声子模式的位移探测平面内应变。这些结果为质子辐照GaN的行为提供了见解，进一步强调了其作为耐辐射材料的潜力。在未来的研究中，观察到的退火也可以与GaN的电子特性相关联，从而有助于开发更高效的器件。
{"title":"Investigation of defects and strain in GaN due to proton irradiation","authors":"Shwetha Sunil Kumar , H. Renuka , Mohin Sharma , Bibhudutta Rout , Sanjit K. Ghose , B. Reeja-Jayan","doi":"10.1016/j.mssp.2025.110368","DOIUrl":"10.1016/j.mssp.2025.110368","url":null,"abstract":"<div><div>Gallium nitride (GaN) has recently emerged as a preferred choice of material for high-power, high-frequency applications, including high electron mobility transistors (HEMTs), which are primarily used in satellites and other military systems deployed in space. However, the reliable operation of these devices depends upon the structural stability of the constituent GaN on exposure to energetic radiations present in space. In this study, we investigate the impact of 2 MeV proton irradiation on GaN films. Samples were irradiated at three fluence levels – 1x10<sup>11</sup> cm<sup>−2</sup>, 1x10<sup>13</sup> cm<sup>−2</sup>, and 1x10<sup>15</sup> cm<sup>−2</sup> and analyzed via high-resolution X-ray diffraction (HR-XRD) techniques. We observe via rocking curves (RCs) that the dislocation density decreases with increasing fluence, indicating that irradiation-induced annealing is occurring. This is further corroborated by symmetric and asymmetric reciprocal space maps (RSMs), which show a decrease in the spread of the lattice points after exposure to radiation. Additionally, we observe that the c-lattice parameter decreases with increasing fluence while the a-lattice parameter exhibits an opposite trend, resulting in an overall increase in the unit cell volume. Raman spectroscopy was used to probe in-plane strain through shifts in the E<sub>2</sub>(high) phonon mode. These results provide insights into the behavior of proton-irradiated GaN, further underscoring its potential as a radiation-tolerant material. The observed annealing can also be correlated with the electronic properties of GaN in future studies, thereby aiding in the development of more efficient devices.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"205 ","pages":"Article 110368"},"PeriodicalIF":4.6,"publicationDate":"2025-12-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145841062","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
FA-based perovskites are among the most potential light-absorbing materials. However, the inherent structural defects and residual lead iodide (PbI2) significantly adversely affected both the device's photovoltaic performance and stability. A rational additive strategy is reported to dope the multifunctional small molecule 4-nitrobenzenesulfonyl fluoride (NFS) into the perovskite layer. The NFS molecules, through coordination interactions, modulated grain growth and reduced the amount of residual PbI2. Furthermore, the fluorine moiety in the NFS molecule served to impart a hydrophobic barrier to the film, which improved the moisture stability of the PSCs. Consequently, the modified devices demonstrated a notable improvement in PCE, increasing from 20.04 % to 22.13 %. The reduction in Urbach energy indicates enhanced ordering at the grain boundaries. Ultimately, the champion device retained 83 % of its original PCE after 160 h of keeping in an outside atmosphere with 50 % relative humidity.
{"title":"Excess PbI2 suppression and grain growth regulation by 4-nitrobenzenesulfonyl fluoride for efficient and stable perovskite solar cells","authors":"Qianguang Yin, Xingchong Liu, Qinghao Hu, Zhichao Lin, Juncai Yang, Xu Gao, Peng Xiao, Taotao Jiang","doi":"10.1016/j.mssp.2025.110366","DOIUrl":"10.1016/j.mssp.2025.110366","url":null,"abstract":"<div><div>FA-based perovskites are among the most potential light-absorbing materials. However, the inherent structural defects and residual lead iodide (PbI<sub>2</sub>) significantly adversely affected both the device's photovoltaic performance and stability. A rational additive strategy is reported to dope the multifunctional small molecule 4-nitrobenzenesulfonyl fluoride (NFS) into the perovskite layer. The NFS molecules, through coordination interactions, modulated grain growth and reduced the amount of residual PbI<sub>2</sub>. Furthermore, the fluorine moiety in the NFS molecule served to impart a hydrophobic barrier to the film, which improved the moisture stability of the PSCs. Consequently, the modified devices demonstrated a notable improvement in PCE, increasing from 20.04 % to 22.13 %. The reduction in Urbach energy indicates enhanced ordering at the grain boundaries. Ultimately, the champion device retained 83 % of its original PCE after 160 h of keeping in an outside atmosphere with 50 % relative humidity.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"205 ","pages":"Article 110366"},"PeriodicalIF":4.6,"publicationDate":"2025-12-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145841051","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-12-22DOI: 10.1016/j.mssp.2025.110370
Jie Zhang , Yi Luo , Bai Sun , Fanggong Cai , Shunping Shi , Chuanyu Zhang , Guo Yan , Yong Zhao
In recent years, memristors have captured considerable interest owing to their distinct resistive switching (RS) capabilities and adjustable chemical composition, positioning them as promising elements for neuromorphic computing and nonvolatile memory systems. This study introduces a novel approach-applying machine learning (ML) to refine the fabrication process of Fe(Se,Te) thin films tailored for memristive applications. Notably, the devices derived from these films demonstrate reliable and enhanced RS behavior. Interestingly, when subjected to ethanol treatment, the memristive effect becomes more pronounced, hinting at a chemical modulation pathway. Experimental observations suggest that ethanol, under an external electric field, facilitates the creation of conductive filaments within the film, thereby increasing the resistance contrast between high and low states by a factor of approximately 2–7. This enhancement also leads to a substantial expansion of the memory window. By bridging data-driven modeling with experimental synthesis, our study not only advances material optimization strategies but also reveals a compelling new use for Fe(Se,Te) films-as sensitive detectors for alcohol-based compounds.
{"title":"Mechanism study on machine learning–based process optimization and ethanol-induced performance enhancement of Fe(Se,Te) memristors","authors":"Jie Zhang , Yi Luo , Bai Sun , Fanggong Cai , Shunping Shi , Chuanyu Zhang , Guo Yan , Yong Zhao","doi":"10.1016/j.mssp.2025.110370","DOIUrl":"10.1016/j.mssp.2025.110370","url":null,"abstract":"<div><div>In recent years, memristors have captured considerable interest owing to their distinct resistive switching (RS) capabilities and adjustable chemical composition, positioning them as promising elements for neuromorphic computing and nonvolatile memory systems. This study introduces a novel approach-applying machine learning (ML) to refine the fabrication process of Fe(Se,Te) thin films tailored for memristive applications. Notably, the devices derived from these films demonstrate reliable and enhanced RS behavior. Interestingly, when subjected to ethanol treatment, the memristive effect becomes more pronounced, hinting at a chemical modulation pathway. Experimental observations suggest that ethanol, under an external electric field, facilitates the creation of conductive filaments within the film, thereby increasing the resistance contrast between high and low states by a factor of approximately 2–7. This enhancement also leads to a substantial expansion of the memory window. By bridging data-driven modeling with experimental synthesis, our study not only advances material optimization strategies but also reveals a compelling new use for Fe(Se,Te) films-as sensitive detectors for alcohol-based compounds.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"205 ","pages":"Article 110370"},"PeriodicalIF":4.6,"publicationDate":"2025-12-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145841048","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Heterojunction engineering significantly enhances photocatalytic CO2 reduction performance. However, a large lattice mismatch in heterostructures hinders photocatalytic reaction by forming extensive grain boundaries, inefficient interfaces, and sluggish interfacial charge transfer. Metal halide perovskites, featuring soft lattices induced by weak ionic metal-halide bonds, offer effective solutions to alleviate such mismatches. Herein, we fabricate BaTiO3/CsPbBr3 photocatalysts with a precisely engineered type-II heterojunction. Notably, the BaTiO3/CsPbBr3 heterostructure achieves a CO formation rate of 17.3 μmol∙g−1 h−1 — 5.2-fold and 2.3-fold higher than pristine BaTiO3 (3.3 μmol∙g−1 h−1) and CsPbBr3 (7.6 μmol∙g−1 h−1), respectively. This improvement stems from the synergistic effect of enhanced light absorption and charge separation. This work provides fundamental insights for developing high-performance heterojunction photocatalysts.
{"title":"Perovskite-mediated lattice compatibility in BaTiO3/CsPbBr3 heterostructures for photocatalytic CO2 reduction","authors":"Yulin Tan, Ziye Shen, Ying Yang, Huimin Zhang, Yufang Xie, Chenglin Zhang, Yuan Liu, Mingming Chen, Dawei Cao","doi":"10.1016/j.mssp.2025.110375","DOIUrl":"10.1016/j.mssp.2025.110375","url":null,"abstract":"<div><div>Heterojunction engineering significantly enhances photocatalytic CO<sub>2</sub> reduction performance. However, a large lattice mismatch in heterostructures hinders photocatalytic reaction by forming extensive grain boundaries, inefficient interfaces, and sluggish interfacial charge transfer. Metal halide perovskites, featuring soft lattices induced by weak ionic metal-halide bonds, offer effective solutions to alleviate such mismatches. Herein, we fabricate BaTiO<sub>3</sub>/CsPbBr<sub>3</sub> photocatalysts with a precisely engineered type-II heterojunction. Notably, the BaTiO<sub>3</sub>/CsPbBr<sub>3</sub> heterostructure achieves a CO formation rate of 17.3 μmol∙g<sup>−1</sup> h<sup>−1</sup> — 5.2-fold and 2.3-fold higher than pristine BaTiO<sub>3</sub> (3.3 μmol∙g<sup>−1</sup> h<sup>−1</sup>) and CsPbBr<sub>3</sub> (7.6 μmol∙g<sup>−1</sup> h<sup>−1</sup>), respectively. This improvement stems from the synergistic effect of enhanced light absorption and charge separation. This work provides fundamental insights for developing high-performance heterojunction photocatalysts.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"205 ","pages":"Article 110375"},"PeriodicalIF":4.6,"publicationDate":"2025-12-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145841133","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-12-19DOI: 10.1016/j.mssp.2025.110330
Ting Zhang , Ruipeng Hou , Rong Wu , Chen Zhang , Yindi Yu , Wenlong Yang , Shunhang Wei
Limited by rapid carrier recombination, the photocatalytic hydrogen peroxide (H2O2) generation performance of Zn2In2S5 is far from practical application. Herein, Zn2In2S5/In2S3 S-scheme heterostructures were constructed by employing a one-step hydrothermal strategy that precisely adjusted the Zn:In precursor ratio. Thanks to the band structures with sufficiently redox ability of In2S3 and Zn2In2S5, as well as enhanced carrier separation and transfer efficiency, the optimal Zn2In2S5/In2S3 heterostructures (ZIS/In2S3-1:4) achieved a sacrificial-agent-free H2O2 production rate of 339.5 μM h−1 under AM 1.5 irradiation, which approximately 1.7 times higher than that of pristine Zn2In2S5. Meanwhile, it also exhibited good H2O2 evolution rate under visible-light irradiation and reusability. Its apparent quantum yield (AQY) at 380 nm, 420 nm, and 450 nm reached to 1.32 %, 1.11 %, and 0.63 %, respectively. In addition, the introduction of In2S3 inhibited H2O2 decomposition and enhanced the selectivity of H2O2 production. In the photocatalytic process, superoxide radicals and holes were the key reactive substances, thereby H2O2 was generated via a two-step single-electron O2 reduction reaction process and one-step two-electron water oxidation reaction process. The construction strategy of the Zn2In2S5/In2S3 S-scheme heterostructures is expected to provide a new perspective for the design of photocatalysts for efficient H2O2 synthesis.
{"title":"Zn2In2S5/In2S3 S-scheme heterostructures for sacrificial-agent-free photocatalytic H2O2 production","authors":"Ting Zhang , Ruipeng Hou , Rong Wu , Chen Zhang , Yindi Yu , Wenlong Yang , Shunhang Wei","doi":"10.1016/j.mssp.2025.110330","DOIUrl":"10.1016/j.mssp.2025.110330","url":null,"abstract":"<div><div>Limited by rapid carrier recombination, the photocatalytic hydrogen peroxide (H<sub>2</sub>O<sub>2</sub>) generation performance of Zn<sub>2</sub>In<sub>2</sub>S<sub>5</sub> is far from practical application. Herein, Zn<sub>2</sub>In<sub>2</sub>S<sub>5</sub>/In<sub>2</sub>S<sub>3</sub> S-scheme heterostructures were constructed by employing a one-step hydrothermal strategy that precisely adjusted the Zn:In precursor ratio. Thanks to the band structures with sufficiently redox ability of In<sub>2</sub>S<sub>3</sub> and Zn<sub>2</sub>In<sub>2</sub>S<sub>5</sub>, as well as enhanced carrier separation and transfer efficiency, the optimal Zn<sub>2</sub>In<sub>2</sub>S<sub>5</sub>/In<sub>2</sub>S<sub>3</sub> heterostructures (ZIS/In<sub>2</sub>S<sub>3</sub>-1:4) achieved a sacrificial-agent-free H<sub>2</sub>O<sub>2</sub> production rate of 339.5 μM h<sup>−1</sup> under AM 1.5 irradiation, which approximately 1.7 times higher than that of pristine Zn<sub>2</sub>In<sub>2</sub>S<sub>5</sub>. Meanwhile, it also exhibited good H<sub>2</sub>O<sub>2</sub> evolution rate under visible-light irradiation and reusability. Its apparent quantum yield (AQY) at 380 nm, 420 nm, and 450 nm reached to 1.32 %, 1.11 %, and 0.63 %, respectively. In addition, the introduction of In<sub>2</sub>S<sub>3</sub> inhibited H<sub>2</sub>O<sub>2</sub> decomposition and enhanced the selectivity of H<sub>2</sub>O<sub>2</sub> production. In the photocatalytic process, superoxide radicals and holes were the key reactive substances, thereby H<sub>2</sub>O<sub>2</sub> was generated via a two-step single-electron O<sub>2</sub> reduction reaction process and one-step two-electron water oxidation reaction process. The construction strategy of the Zn<sub>2</sub>In<sub>2</sub>S<sub>5</sub>/In<sub>2</sub>S<sub>3</sub> S-scheme heterostructures is expected to provide a new perspective for the design of photocatalysts for efficient H<sub>2</sub>O<sub>2</sub> synthesis.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"205 ","pages":"Article 110330"},"PeriodicalIF":4.6,"publicationDate":"2025-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145798350","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-12-18DOI: 10.1016/j.mssp.2025.110364
Luanxu Zhu , Zejiang Chen , Rui Tang , Zihe Wang , Yangyang Zhang , Pai Li , Yunbin He , Qingfeng Zhang
Self-powered ultraviolet (UV) photodetectors (PDs) based on Ga2O3 have garnered considerable interest for their application potential. However, their development is constrained by two primary factors: the inherent low carrier concentration of Ga2O3 and weak photogenerated carriers separation ability, which limit photoresponse performances, and the reliance on complex and expensive vacuum-based fabrication techniques. Herein, we report a high-performance PZT/(Ga0.6Ti0.4)2O3 heterojunction UV photodetector fabricated by a facile, low-cost sol-gel method to overcome these limitations. Ti4+ has higher valence than Ga3+, and thus the introduction of Ti4+ into the Ga2O3 can increase carrier concentration. In addition, the separation and transport of photogenerated carriers in the photodetector are synergistically enhanced by the combined action of two internal electric fields: the depolarization field from high remnant polarization of PZT layer and the inherent built-in field at the PZT/(Ga0.6Ti0.4)2O3 heterojunction interfaces. As a consequence, the Au/PZT/(Ga0.6Ti0.4)2O3/FTO heterojunction photodetector exhibits superior photoelectric characteristics under 300 nm light and 0 V bias, characterized by a responsivity of 20.72 mA/W, a detectivity of 5.79 × 1011 Jones, and an ultrafast response rate with rise/decay time of 0.05/0.04 s, which exceeds most Ga2O3-based self-powered photodetectors in terms of overall photoresponse performances.
{"title":"Ferroelectric depolarization field-driven high- property Ga2O3-Based self-powered ultraviolet photodetectors","authors":"Luanxu Zhu , Zejiang Chen , Rui Tang , Zihe Wang , Yangyang Zhang , Pai Li , Yunbin He , Qingfeng Zhang","doi":"10.1016/j.mssp.2025.110364","DOIUrl":"10.1016/j.mssp.2025.110364","url":null,"abstract":"<div><div>Self-powered ultraviolet (UV) photodetectors (PDs) based on Ga<sub>2</sub>O<sub>3</sub> have garnered considerable interest for their application potential. However, their development is constrained by two primary factors: the inherent low carrier concentration of Ga<sub>2</sub>O<sub>3</sub> and weak photogenerated carriers separation ability, which limit photoresponse performances, and the reliance on complex and expensive vacuum-based fabrication techniques. Herein, we report a high-performance PZT/(Ga<sub>0.6</sub>Ti<sub>0.4</sub>)<sub>2</sub>O<sub>3</sub> heterojunction UV photodetector fabricated by a facile, low-cost sol-gel method to overcome these limitations. Ti<sup>4+</sup> has higher valence than Ga<sup>3+</sup>, and thus the introduction of Ti<sup>4+</sup> into the Ga<sub>2</sub>O<sub>3</sub> can increase carrier concentration. In addition, the separation and transport of photogenerated carriers in the photodetector are synergistically enhanced by the combined action of two internal electric fields: the depolarization field from high remnant polarization of PZT layer and the inherent built-in field at the PZT/(Ga<sub>0.6</sub>Ti<sub>0.4</sub>)<sub>2</sub>O<sub>3</sub> heterojunction interfaces. As a consequence, the Au/PZT/(Ga<sub>0.6</sub>Ti<sub>0.4</sub>)<sub>2</sub>O<sub>3</sub>/FTO heterojunction photodetector exhibits superior photoelectric characteristics under 300 nm light and 0 V bias, characterized by a responsivity of 20.72 mA/W, a detectivity of 5.79 × 10<sup>11</sup> Jones, and an ultrafast response rate with rise/decay time of 0.05/0.04 s, which exceeds most Ga<sub>2</sub>O<sub>3</sub>-based self-powered photodetectors in terms of overall photoresponse performances.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"205 ","pages":"Article 110364"},"PeriodicalIF":4.6,"publicationDate":"2025-12-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145798405","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This work reports on the design and analysis of a star-shaped, wideband textile antenna utilizing a poly-cotton substrate and conductive fabric, integrated with a coplanar waveguide feed (PCSWTA). The antenna is constructed using a substrate of size 70 × 80 × 0.7 mm3 and operates over a broad frequency spectrum, ranging from 1.35 GHz to 10.8 GHz, achieving an impedance bandwidth of 9.5 GHz and a maximum gain of 4.8 dBi. The proposed antenna supports multiple wireless communication standards, including GSM, 5G (n77, n78, n79), WiMAX, satellite, and Wireless Body Area Network (WBAN) applications. To assess its suitability for wearable scenarios, the operational characteristics of the antenna were analyzed by mounting it on human hand and leg phantom models employing CST Microwave Studio. The measured specific absorption rate (SAR) values on the hand model were 0.118, 0.328, 0.655, and 0.804 W/kg, and on the leg model were 0.173, 0.496, 0.686, and 0.833 W/kg at frequencies of 1.9, 2.4, 3.5, and 9 GHz, respectively, remaining within the safe exposure limits. Furthermore, the antenna's radiation characteristics under mechanical deformation were investigated, where bending along both the x- and y-axes demonstrated minimal variation in the radiation pattern, confirming its mechanical robustness. Experimental measurements of gain, efficiency, and radiation patterns conducted in an anechoic chamber exhibited strong agreement with the simulated results, validating the antenna's effectiveness for wearable and off-body communication applications.
{"title":"Design and analysis of poly-cotton material based star-shaped wide band textile antenna for GSM, 5G, WBAN, and satellite communication applications","authors":"G. Obulesu , Abdulkarem H.M. Almawgani , Ch Raghavendra , AdamR.H. Alhawari , Yalavarthi Usha Devi , B.T.P. Madhav","doi":"10.1016/j.mssp.2025.110340","DOIUrl":"10.1016/j.mssp.2025.110340","url":null,"abstract":"<div><div>This work reports on the design and analysis of a star-shaped, wideband textile antenna utilizing a poly-cotton substrate and conductive fabric, integrated with a coplanar waveguide feed (PCSWTA). The antenna is constructed using a substrate of size 70 × 80 × 0.7 mm<sup>3</sup> and operates over a broad frequency spectrum, ranging from 1.35 GHz to 10.8 GHz, achieving an impedance bandwidth of 9.5 GHz and a maximum gain of 4.8 dBi. The proposed antenna supports multiple wireless communication standards, including GSM, 5G (n77, n78, n79), WiMAX, satellite, and Wireless Body Area Network (WBAN) applications. To assess its suitability for wearable scenarios, the operational characteristics of the antenna were analyzed by mounting it on human hand and leg phantom models employing CST Microwave Studio. The measured specific absorption rate (SAR) values on the hand model were 0.118, 0.328, 0.655, and 0.804 W/kg, and on the leg model were 0.173, 0.496, 0.686, and 0.833 W/kg at frequencies of 1.9, 2.4, 3.5, and 9 GHz, respectively, remaining within the safe exposure limits. Furthermore, the antenna's radiation characteristics under mechanical deformation were investigated, where bending along both the x- and y-axes demonstrated minimal variation in the radiation pattern, confirming its mechanical robustness. Experimental measurements of gain, efficiency, and radiation patterns conducted in an anechoic chamber exhibited strong agreement with the simulated results, validating the antenna's effectiveness for wearable and off-body communication applications.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"205 ","pages":"Article 110340"},"PeriodicalIF":4.6,"publicationDate":"2025-12-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145798281","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-12-18DOI: 10.1016/j.mssp.2025.110351
Xinpei Duan , Yiwu Qiu , Xitong Hong , Ling Lv , Tao Wang , Jiawei Chen , Lei Dong , Qianlei Tian , Pei Yang , Lili Zhang , Tong Bu , Yanan Yin , Xinjie Zhou , Chang Liu
Gallium nitride (GaN) high-electron-mobility transistors (HEMTs) exhibit superior inherent radiation tolerance compared to silicon-based devices, owing to their wide bandgap and robust atomic structure. These properties position GaN HEMTs as promising candidates for aerospace, nuclear, and defense applications. Although lateral GaN HEMTs have demonstrated switching capabilities up to 1200 V, their susceptibility to single-event burnout (SEB) under high-voltage operations in radiation-rich environments remains a critical challenge. This review comprehensively analyzes radiation effects, including total ionizing dose (TID), displacement damage (DD), and single-event effects (SEEs) on GaN HEMT power devices, with a critical comparison of the radiation response between Cascode and P-GaN gate structures. Furthermore, this review systematically categorizes and evaluates various radiation hardening strategies, emphasizing process-hardened techniques for single-event burnout, such as field plates, shielding materials, and specialized device structures. Finally, key research gaps are identified, and future directions for the development of radiation-hardened GaN technology are proposed.
{"title":"Radiation effects and hardening strategies of GaN HEMT power devices","authors":"Xinpei Duan , Yiwu Qiu , Xitong Hong , Ling Lv , Tao Wang , Jiawei Chen , Lei Dong , Qianlei Tian , Pei Yang , Lili Zhang , Tong Bu , Yanan Yin , Xinjie Zhou , Chang Liu","doi":"10.1016/j.mssp.2025.110351","DOIUrl":"10.1016/j.mssp.2025.110351","url":null,"abstract":"<div><div>Gallium nitride (GaN) high-electron-mobility transistors (HEMTs) exhibit superior inherent radiation tolerance compared to silicon-based devices, owing to their wide bandgap and robust atomic structure. These properties position GaN HEMTs as promising candidates for aerospace, nuclear, and defense applications. Although lateral GaN HEMTs have demonstrated switching capabilities up to 1200 V, their susceptibility to single-event burnout (SEB) under high-voltage operations in radiation-rich environments remains a critical challenge. This review comprehensively analyzes radiation effects, including total ionizing dose (TID), displacement damage (DD), and single-event effects (SEEs) on GaN HEMT power devices, with a critical comparison of the radiation response between Cascode and P-GaN gate structures. Furthermore, this review systematically categorizes and evaluates various radiation hardening strategies, emphasizing process-hardened techniques for single-event burnout, such as field plates, shielding materials, and specialized device structures. Finally, key research gaps are identified, and future directions for the development of radiation-hardened GaN technology are proposed.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"205 ","pages":"Article 110351"},"PeriodicalIF":4.6,"publicationDate":"2025-12-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145798348","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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