Materials Science in Semiconductor Processing最新文献_第5页

The electronic and magnetic properties of Cr-doped ZnO monolayer at higher percentage by first principles calculations 通过第一性原理计算掺杂更高比例铬的单层氧化锌的电子和磁学特性

IF 4.2 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing

Pub Date : 2024-10-22 DOI: 10.1016/j.mssp.2024.108999

The crystal structure, structural stability, electronic band structures and magnetization of Cr-doped ZnO monolayer (ML) have been investigated by GGA+U method using first principles calculations in this work. The stability of these systems is confirmed by the negative formation energies at different Cr concentrations. The calculated band gaps with and without the Hubbard U correction aligned well with other computational results. With the increase of Cr concentration, the band gap of Cr-doped ZnO monolayer decreases for the spin-up configuration. However, in the spin-down configuration, the band gap increases first and then decreases and the maximum band gap is obtained at 22.22% Cr concentrations. At 33.33% Cr concentration, the ZnO ML exhibits metallic behavior. The density of states (DOS) analysis reveals an asymmetric nature, indicating ferromagnetism in Cr-doped ZnO MLs at various concentrations, with a magnetic moment per Cr atom of approximately 3.99 μ_B. The total magnetic moment rises with increasing Cr concentration. Charge density difference analysis shows increased magnetization with higher Cr concentration. At 22.22% Cr concentration, the ZnO ML exhibits ferromagnetism and semiconducting properties, suggesting significant potential for spintronic applications as a diluted magnetic semiconductor.

本研究采用第一性原理计算，通过 GGA+U 方法研究了掺杂铬的氧化锌单层（ML）的晶体结构、结构稳定性、电子带结构和磁化。不同铬浓度下的负形成能证实了这些体系的稳定性。计算出的带隙（含或不含 Hubbard U 修正）与其他计算结果非常吻合。随着铬浓度的增加，掺杂铬的氧化锌单层在自旋上升构型下的带隙减小。然而，在旋下配置中，带隙先增大后减小，在铬浓度为 22.22% 时达到最大带隙。当铬浓度为 33.33% 时，氧化锌 ML 表现出金属特性。状态密度（DOS）分析表明，不同浓度的铬掺杂氧化锌 ML 具有不对称性质，表明其具有铁磁性，每个铬原子的磁矩约为 3.99 μB。总磁矩随着铬浓度的增加而上升。电荷密度差分析表明，铬浓度越高，磁化率越高。在铬浓度为 22.22% 时，氧化锌 ML 表现出铁磁性和半导体特性，表明其作为稀释磁性半导体在自旋电子应用方面具有巨大潜力。

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引用次数: 0

Deep learning route to quantum materials: A domain agnostic analytic continuation mapping 量子材料的深度学习之路：领域无关的分析延续映射

IF 4.2 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing

Pub Date : 2024-10-22 DOI: 10.1016/j.mssp.2024.109002

In recent years, numerous techniques have been developed to improve our understanding of the physical principles governing quantum materials. Such systems exhibit highly unusual behavior in response to variations in chemical composition, temperature, and pressure. For instance, some are insulators in some regions of the phase diagram, or poorly conducting metals, but nonetheless become high-temperature superconductors at optimal doping, as temperature decreases. Electron–electron interactions, along with disorder and inhomogeneity, have been identified as crucial factors in this class of materials. Disorder plays a significant role in tuning the critical temperature

T_{c}

, making these materials promising candidates for novel technological applications. Furthermore, recent advancements in machine learning, coupled with the extended availability of theoretically and experimentally generated datasets, create an ideal environment for accelerating quantum materials research, facilitating deeper understanding and even potential discovery of entirely new materials. In this work, we focus on a specific calculation of the density of states within the context of metal–insulator transitions. We employ the statistical Dynamical Mean Field Theory (statDMFT) and Quantum Monte Carlo (QMC) methods to solve the local impurity problem in the Matsubara frequency domain, generating a large number of Green’s functions in the Matsubara frequency domain and their corresponding spectral functions. We use these duals to train a deep neural network architecture that acts as a mapping from the discretized Matsubara frequency domain to the discretized real frequency domain, enabling physical interpretation.

近年来，我们开发了许多技术来提高对量子材料物理原理的理解。这些系统在化学成分、温度和压力变化的作用下表现出非常不寻常的行为。例如，有些量子材料在相图的某些区域是绝缘体，或者是导电性很差的金属，但在最佳掺杂条件下，随着温度的降低，它们会变成高温超导体。电子与电子之间的相互作用以及无序性和不均匀性被认为是这一类材料的关键因素。无序在调整临界温度 Tc 方面起着重要作用，使这些材料成为新型技术应用的理想候选材料。此外，机器学习的最新进展，加上理论和实验生成数据集的扩展可用性，为加速量子材料研究创造了理想的环境，促进了对全新材料的深入理解甚至潜在发现。在这项工作中，我们重点关注金属-绝缘体转变背景下的状态密度的具体计算。我们采用统计动态均值场理论（statDMFT）和量子蒙特卡罗（QMC）方法来解决松原频域中的局部杂质问题，生成大量松原频域中的格林函数及其相应的谱函数。我们利用这些对偶来训练深度神经网络架构，该架构充当了从离散松原频域到离散实频域的映射，从而实现了物理解释。

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引用次数: 0

Gas-sensitive synergistic effect of Au-decorated ZnO nano-structured materials for rapid ethanol detection based on simulated sunlight activation 基于模拟阳光活化的金装饰氧化锌纳米结构材料在快速乙醇检测中的气敏协同效应

IF 4.2 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing

Pub Date : 2024-10-22 DOI: 10.1016/j.mssp.2024.109028

Local surface plasmon resonance (LSPR) and noble metal modification/doping are classical methods for improving the performance of metal-oxide-semiconductor (MOS)-based gas sensors. However, relatively less attention is paid to their synergies. In particular, research on synergistic gas-sensing technology that combines sunlight activation with other methods is significant for using friendly energy. In this study, Au-decorated ZnO (Au/ZnO) nano-structured materials (NMs) are successfully synthesised using a cost-effective nano-seed-assisted chemical bath and UV irradiation growth methods. The sensor based on this material exhibits superior performance in ethanol vapour under simulated sunlight, maintaining high sensitivity and repeatability at a low optimal working temperature. In particular, the sensitivity to 100 ppm of ethanol is 7.5 times better and the response time is 20 times shorter (t_res < 1 s) in simulated sunlight than in the dark environment. The limit of detection (LOD) of ethanol is as low as 97 ppb, which is much lower than the concentration in exhaled breath of driving under the influence of alcohol according to Chinese law (20–80 ppm). This study provides a reliable and ultra-fast ethanol detection method, with potential applications in environmental monitoring and traffic safety. A possible gas-sensitive mechanism of the Au/ZnO ethanol vapour sensor is proposed based on the synergistic effect between simulated sunlight activation (LSPR, humidity resistance and thermal activation) and noble metal modification (electron sensitisation and chemical sensitisation). It provides a promising method for exploring the utilisation of sunlight for rapid gas detection.

局部表面等离子体共振（LSPR）和贵金属修饰/掺杂是提高基于金属氧化物半导体（MOS）的气体传感器性能的经典方法。然而，人们对它们的协同作用关注相对较少。特别是，将阳光活化与其他方法相结合的协同气体传感技术研究对于利用友好型能源具有重要意义。本研究采用经济有效的纳米种子辅助化学浴和紫外线照射生长方法，成功合成了金装饰氧化锌（Au/ZnO）纳米结构材料（NMs）。基于这种材料的传感器在模拟阳光下的乙醇蒸汽中表现出卓越的性能，在较低的最佳工作温度下仍能保持高灵敏度和可重复性。特别是，在模拟阳光下，对 100 ppm 乙醇的灵敏度比黑暗环境下提高了 7.5 倍，响应时间缩短了 20 倍（tres < 1 s）。乙醇的检测限（LOD）低至 97 ppb，远低于中国法律规定的酒后驾车呼气浓度（20-80 ppm）。该研究提供了一种可靠、超快速的乙醇检测方法，有望应用于环境监测和交通安全领域。基于模拟阳光活化（LSPR、耐湿性和热活化）和贵金属修饰（电子敏化和化学敏化）之间的协同效应，提出了金/氧化锌乙醇蒸汽传感器的可能气敏机理。它为探索利用阳光进行快速气体检测提供了一种可行的方法。

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引用次数: 0

Pressure-induced band gap enhancement and temperature-dependent thermoelectric characterization of semiconducting Transition Metal Chalcogenides LiMS (M = Cu, Ag) 半导体过渡金属卤化物 LiMS（M = 铜、银）的压力诱导带隙增强和随温度变化的热电特性分析

IF 4.2 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing

Pub Date : 2024-10-22 DOI: 10.1016/j.mssp.2024.109030

The first principles study of Transition Metal Chalcogenides LiMS (M = Cu, Ag) has been conducted utilizing the concepts of Density Functional Theory (DFT). Both the compounds possess a cubic structure with space group F-43m. The mechanical stability of LiCuS and LiAgS has been predicted based on the values of elastic tensor. These Chalcogenides possess an interesting electronic band structure which reveals their semiconducting nature with a direct band gap. The electronic structure is further subjected to high pressure and the changes in band gap are deeply observed. For these materials, the changes in band gap in response to applied pressure suggest the possibility of their use in band gap engineering. The phonon curves are investigated over the Brillouin zone's high symmetry directions which reveal the lattice dynamical stability of the presently studied compounds. Moreover, the atoms present at different positions inside a crystal lattice exhibit vibrations of different intensities and in different directions which have been studied through the Eigenvector representations. The thermoelectric properties of LiCuS and LiAgS have been characterized using Boltzmann's theory over the range of temperature between 100 K and 1600 K. The calculated thermoelectric parameters reveal the high thermoelectric efficiency of these materials with excellent values of the figure of merit. The interesting properties of ternary Chalcogenides LiMS (M = Cu, Ag) make them promising candidates for thermoelectric applications.

我们利用密度泛函理论（DFT）的概念，对过渡金属钙苷 LiMS（M = 铜、银）进行了第一原理研究。这两种化合物都具有空间群 F-43m 的立方结构。根据弹性张量值预测了 LiCuS 和 LiAgS 的机械稳定性。这些卤化物具有有趣的电子带结构，揭示了它们具有直接带隙的半导体性质。将电子结构进一步置于高压下，可以深入观察到带隙的变化。对于这些材料来说，带隙在施加压力时的变化表明它们有可能用于带隙工程。对布里渊区高对称方向上的声子曲线进行了研究，揭示了目前所研究化合物的晶格动态稳定性。此外，存在于晶格内不同位置的原子会在不同方向上表现出不同强度的振动，我们通过特征向量表示法对其进行了研究。利用玻尔兹曼理论对 LiCuS 和 LiAgS 在 100 K 至 1600 K 温度范围内的热电性能进行了表征。三元 Chalcogenides LiMS（M = 铜、银）的有趣特性使它们成为热电应用的理想候选材料。

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引用次数: 0

B3C2N3 monolayer as a potential biosensor for the sensitive and selective detection of liver cancer biomarkers: A DFT study 将 B3C2N3 单层作为一种潜在的生物传感器，用于灵敏、选择性地检测肝癌生物标志物：DFT 研究

IF 4.2 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing

Pub Date : 2024-10-19 DOI: 10.1016/j.mssp.2024.109025

Density functional theory was employed to investigate the interaction between a monolayer of B₃C₂N₃ and potential biomarkers of liver cancer present in exhaled breath. The focus of our study was specifically on 1-Octen-3-ol, limonene, hexanal, 2-pentanone, methanol, and decane. Furthermore, we examined the most stable arrangement of these biomarkers on the B₃C₂N₃ monolayer and compared it to the adsorption of four interfering molecules commonly found in exhaled human breath, namely N₂, O₂, CO₂, and H₂O. The selectivity of the B₃C₂N₃ nanosheet for these biomarkers is confirmed, even in the presence of interfering species. The nanosheet surface demonstrates both electronic and φ-type sensor properties when detecting the methanol biomarker. The B₃C₂N₃ nanosheet exhibits favorable adsorption energy and φ-type sensor properties, along with an appropriate recovery time, when exposed to the 1-Octen-3-ol and limonene biomarkers. Finally, we propose the B₃C₂N₃ nanosheet as a reusable sensor for the early diagnosis of liver cancer based on the biomarkers detection through the analysis of patients' exhaled breath.

我们采用密度泛函理论研究了单层 B3C2N3 与呼出气体中潜在的肝癌生物标志物之间的相互作用。我们的研究重点是 1-辛烯-3-醇、柠檬烯、己醛、2-戊酮、甲醇和癸烷。此外，我们还研究了这些生物标记物在 B3C2N3 单层上最稳定的排列方式，并将其与人体呼出气体中常见的四种干扰分子（即 N2、O2、CO2 和 H2O）的吸附情况进行了比较。结果表明，即使在存在干扰物的情况下，B3C2N3 纳米片对这些生物标记物也具有选择性。在检测甲醇生物标记物时，纳米片表面显示出电子和φ型传感器特性。在暴露于 1-辛烯-3-醇和柠檬烯生物标记物时，B3C2N3 纳米片表现出良好的吸附能和φ 型传感器特性，并有适当的恢复时间。最后，我们建议将 B3C2N3 纳米片作为一种可重复使用的传感器，通过分析患者呼出的气体检测生物标记物，用于肝癌的早期诊断。

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引用次数: 0

Two-step passivation by K2S2O8 and NH4F/H2O2 solutions for improving the performance of CdZnTe detectors 用 K2S2O8 和 NH4F/H2O2 溶液进行两步钝化以提高碲锌镉探测器的性能

IF 4.2 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing

Pub Date : 2024-10-19 DOI: 10.1016/j.mssp.2024.109017

Passivation plays a crucial role in surface treatment, which could generate an oxide layer that significantly decreases the surface leakage current of Cadmium zinc telluride (CdZnTe, CZT) detectors and enhancing their final performance. However, existing passivation methods are limited by the unevenness of the oxide layer and insufficient reduction in surface leakage current. In this paper, a novel two-step passivation method for CdZnTe is proposed, in which the first step uses potassium persulfate (K₂S₂O₈) solution and followed by treatment with ammonium fluoride mixed with hydrogen peroxide (NH₄F/H₂O₂) solution. The results indicate that the passivation method can produce a uniform oxide layer, and the surface leakage current was decreased by 77.76 %. In particular, the energy resolution was improved by 80 % after passivation. This is attributed to the fact that the two-step passivation method removes the highly conductive Te-rich layer, leaving only the tellurium oxide on the CdZnTe surface. Therefore, the two-step passivation method provides an effective passivation treatment process for preparing high-performance CdZnTe room-temperature radiation detector.

钝化在表面处理中起着至关重要的作用，它可以生成氧化层，显著降低碲化镉锌（CdZnTe，CZT）探测器的表面泄漏电流，提高其最终性能。然而，现有的钝化方法受限于氧化层的不均匀性和表面漏电流的降低不足。本文提出了一种新型的两步钝化 CdZnTe 方法，第一步使用过硫酸钾（K2S2O8）溶液，然后使用氟化铵混合过氧化氢（NH4F/H2O2）溶液进行处理。结果表明，这种钝化方法能产生均匀的氧化层，表面漏电流降低了 77.76%。特别是，钝化后的能量分辨率提高了 80%。这是因为两步钝化法去除了高导电性的富碲层，只在碲锌镉表面留下了氧化碲。因此，两步钝化法为制备高性能 CdZnTe 室温辐射探测器提供了一种有效的钝化处理工艺。

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引用次数: 0

DFT investigation of thermodynamic, electronic, optical, and mechanical properties of XLiH3 (X= Mg, Ca, Sr, and Ba) hydrides for hydrogen storage and energy harvesting 用于储氢和能量收集的 XLiH3（X= Mg、Ca、Sr 和 Ba）氢化物的热力学、电子、光学和机械特性的 DFT 研究

IF 4.2 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing

Pub Date : 2024-10-19 DOI: 10.1016/j.mssp.2024.109020

The present study investigates the hydrogen storage capacity and physical properties of the perovskite hydrides XLiH₃ (X = Mg, Ca, Sr, and Ba). The studied compounds MgLiH₃, CaLiH₃, SrLiH₃, and BaLiH₃ have lattice constants 3.76, 4.29, 4.64, and 5.04 Å, respectively. These compounds are also observed to be stable in cubic phase under atmospheric pressure and temperature conditions. They have hydrogen storage capacities 8.76 wt%, 5.99 wt%, 3.07 wt%, and 2.03 %, respectively. The SrLiH₃ compound has the greatest Debye temperature (θ_D) of 344.41 K. The analysis of the electronic band structure and density of states reveals that perovskite hydrides have semiconducting characteristics with indirect band gap values of 2.66, 2.34, 1.94, and 1.37 eV, respectively. The materials are semiconductors and have suitable band gaps to be utilized in optical devices. Therefore, the optoelectronic properties of dielectric constants, absorption, and energy loss have been determined to predict the potential of materials for optoelectronic applications. Furthermore, the elastic constants, moduli, and anisotropy are also calculated for the observed materials. The Possion and Pugh ratios indicate these compounds exhibit ductile behaviour and significant anisotropy. Therefore, large values of hydrogen capacities, stabilities, and extraordinary physical behaviour make them important for hydrogen storage systems.

本研究探讨了包晶氢化物 XLiH3（X = Mg、Ca、Sr 和 Ba）的储氢能力和物理性质。所研究的 MgLiH3、CaLiH3、SrLiH3 和 BaLiH3 化合物的晶格常数分别为 3.76、4.29、4.64 和 5.04 Å。在大气压力和温度条件下，这些化合物的立方相也很稳定。它们的储氢能力分别为 8.76 wt%、5.99 wt%、3.07 wt% 和 2.03 %。对电子能带结构和状态密度的分析表明，透辉石氢化物具有半导体特性，其间接带隙值分别为 2.66、2.34、1.94 和 1.37 eV。这些材料都是半导体，具有适合用于光学设备的带隙。因此，我们测定了介电常数、吸收和能量损失等光电特性，以预测材料的光电应用潜力。此外，还计算了观察到的材料的弹性常数、模量和各向异性。Possion 和 Pugh 比率表明这些化合物具有延展性和显著的各向异性。因此，较大的氢容量值、稳定性和非凡的物理特性使它们成为氢储存系统的重要材料。

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引用次数: 0

A review: CNT/diamond composites prepared via CVD and its potential applications 综述：通过 CVD 制备的 CNT/金刚石复合材料及其潜在应用

IF 4.2 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing

Pub Date : 2024-10-19 DOI: 10.1016/j.mssp.2024.109008

As the demand for semiconductor preparation technology continues to grow in society and the miniaturization of silicon-based semiconductors is approaching physical limits, it is necessary to search for suitable materials as alternatives for nanoscale devices and technologies. Carbon nanotube/diamond (CNT/diamond) composites, a combination of post-Moore era and ultimate semiconductor materials, combine unique one-dimensional and three-dimensional structures of carbon materials with excellent thermal, mechanical, and electrical properties and have the potential to develop into a new generation of high heat flux management devices and new semiconductor devices. In the past 15 years, there were many studies focusing on the integration of diamond with CNT, while it is still a challenge to maximum fulfill all the advantage of both materials. In this review, recent research progresses on the synthesis of CNT/diamond composites by the chemical vapor deposition (CVD) method are analyzed, including the formation of the CNT/diamond interface, and the application of CNT/diamond composites. The CVD methods for preparing CNT/diamond composites, as well as the various shapes and interface characteristics of CNT/diamond composites, are all thoroughly discussed. And guidelines are provided for various composite application scenarios. Finally, the challenges of the interface characteristics of CNT/diamond composites produced by CVD method are summarized. It is believed that CNT/diamond has great potentials in thermal management and semiconductor devices in the future.

随着社会对半导体制备技术的需求不断增长，硅基半导体的微型化已接近物理极限，因此有必要寻找合适的材料作为纳米级器件和技术的替代品。碳纳米管/金刚石（CNT/diamond）复合材料是后摩尔时代与终极半导体材料的结合，它结合了碳材料独特的一维和三维结构，具有优异的热学、机械和电学特性，有望发展成为新一代高热通量管理器件和新型半导体器件。在过去的 15 年中，有许多研究关注金刚石与碳纳米管的结合，但如何最大限度地发挥两种材料的所有优势仍是一个挑战。本综述分析了近年来利用化学气相沉积（CVD）方法合成 CNT/金刚石复合材料的研究进展，包括 CNT/金刚石界面的形成以及 CNT/金刚石复合材料的应用。对制备碳纳米管/金刚石复合材料的 CVD 方法以及碳纳米管/金刚石复合材料的各种形状和界面特征进行了深入讨论。并为各种复合材料的应用场景提供了指导。最后，总结了 CVD 法生产的 CNT/金刚石复合材料界面特性所面临的挑战。相信未来 CNT/金刚石在热管理和半导体器件方面具有巨大潜力。

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引用次数: 0

Exploring topological phases in superconducting transition metal (Sc, Ti, V)-carbides 探索超导过渡金属（Sc、Ti、V）碳化物中的拓扑相位

IF 4.2 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing

Pub Date : 2024-10-19 DOI: 10.1016/j.mssp.2024.108993

The combination of non trivial band topology and superconductivity, resulting in topological superconductivity, igniting a fervent pursuit in the realm of quantum materials. Through density functional theory and maximally localized Wannier functions, we delve into the electronic and topological properties of transition metal carbides

Λ

C (with

Λ =

Sc, Ti, V). Phonon dispersions guarantee the structural stability of these superconductors. Witness the presence of band inversion within the Brillouin Zone of TiC and VC, contrasting the absence of such band inversion in ScC. In addition, the nonzero

Z_{2}

topological invariant as well as the occurrence of Dirac cone in the surface spectrum of TiC and VC, unveil their topologically nontrivial character. These transition metal carbides emerge as promising candidates for probing the depths of topological superconductivity and unraveling the associated Majorana bound states.

非琐碎带拓扑与超导性的结合，导致了拓扑超导，点燃了量子材料领域的热切追求。通过密度泛函理论和最大局域万尼尔函数，我们深入研究了过渡金属碳化物ΛC（Λ= Sc、Ti、V）的电子和拓扑特性。声子色散保证了这些超导体的结构稳定性。我们可以看到 TiC 和 VC 的布里渊区内存在带反转，而 ScC 则不存在这种带反转。此外，非零 Z2 拓扑不变性以及 TiC 和 VC 表面谱中出现的狄拉克锥，揭示了它们的拓扑非三维特性。这些过渡金属碳化物有望成为探测拓扑超导电性深度和揭示相关马约拉纳束缚态的候选材料。

引用次数: 0

Improved indium bumps bonding process using flexible composite structure temporary substrate for micro-LED display applications 利用柔性复合结构临时基板改进铟凸块粘接工艺，用于微型 LED 显示器应用

IF 4.2 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing

Pub Date : 2024-10-19 DOI: 10.1016/j.mssp.2024.109018

Micro-LEDs refer to light-emitting diodes with a size of less than 50 μm, which have superior performances compared to Liquid Crystal Displays (LCDs) and Organic Light-Emitting Diodes (OLEDs). Micro-LEDs are expected to constitute the mainstream electronic display technology in the future. Nevertheless, micro-LED technology is still facing some technical difficulties. Especially, in mass transfer technology, the non-parallel problem between the temporary substrate holding the micro-LED chips and the target substrate seriously affects the bonding quality of the micro-LED chips. To solve this problem, this paper proposes a Polydimethylsiloxane (PDMS)-based flexible composite structure temporary substrate (carrier) doped with dimethyl silicone oil, which is capable of generating a deformation of 6 μm under a pressure of 1 MPa and maintaining this property up to 250 °C. Utilizing this deformation property to cope with the non-parallel problem during the bonding process can significantly improve the bonding quality and yield of micro-LEDs. We placed 1600 (40 × 40) micro-LED chips of size 30 μm × 15 μm on the carrier with a chip pitch of 222 μm. The carrier was heat-treated at 250 °C for 2 min as an adhesion reduction method. Under a bonding temperature of 180 °C and a bonding pressure of 0.3 MPa, bonding of the micro-LEDs with a 1.98-inch thin film transistor (TFT) was implemented using the carriers. A micro-LED green display with a PPI of 114 was successfully fabricated, with a display yield of 95.18 % and a brightness of 18,710 cd/m². The method developed in this paper can overcome the key challenges of micro-LEDs mass transfer technology and pave the way for the industrialization of micro-LEDs.

微型发光二极管是指尺寸小于 50 μm 的发光二极管，与液晶显示器（LCD）和有机发光二极管（OLED）相比具有更优越的性能。预计微型 LED 将成为未来电子显示技术的主流。然而，微型 LED 技术仍面临一些技术难题。特别是在传质技术中，固定微型 LED 芯片的临时基板与目标基板之间的不平行问题严重影响了微型 LED 芯片的接合质量。为解决这一问题，本文提出了一种掺有二甲基硅油的聚二甲基硅氧烷（PDMS）基柔性复合结构临时基板（载体），它能在 1 兆帕的压力下产生 6 微米的变形，并能在 250 °C 的温度下保持这一特性。利用这种变形特性来解决粘合过程中的不平行问题，可以显著提高微型 LED 的粘合质量和成品率。我们在芯片间距为 222 μm 的载体上放置了 1600 (40 × 40) 个尺寸为 30 μm × 15 μm 的微型 LED 芯片。作为减少附着力的方法，载体在 250 °C 下热处理 2 分钟。在 180 ℃ 的粘合温度和 0.3 MPa 的粘合压力下，使用载体实现了微型 LED 与 1.98 英寸薄膜晶体管 (TFT) 的粘合。成功制造出了 PPI 为 114 的微型 LED 绿色显示屏，显示成品率为 95.18%，亮度为 18,710 cd/m2。本文开发的方法可以克服微型 LED 传质技术的关键难题，为微型 LED 的产业化铺平道路。

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引用次数: 0