Pub Date : 2026-05-01Epub Date: 2026-01-23DOI: 10.1016/j.mssp.2026.110457
Staines Obed James Johnson , Rajesh Paulraj , Rachna Selvamani , Rekha Rao
Compositional tuning of CdTe-based II-VI semiconductors plays an important role in optimizing physical properties required for detector grade, magneto-optical and optoelectronic materials. In this work, undoped Cd0.90Mn0.10Te1-ySey (y = 0, 0.02, 0.04, 0.06) single crystals were grown by the vertical Bridgman technique to explore the influence of selenium incorporation on their structural, optical, electrical, and magnetic behavior. All compositions confirmed a cubic zinc blende structure (F-43m), and a systematic lattice contraction, confirming Se substitution at Te sites. Optical studies revealed a linear bandgap reduction from 1.585 eV to 1.563 eV (∼3.7 meV per % Se), consistent with the redshift in photoluminescence emission attributed to intrinsic excitonic recombination. Infrared transmittance remained nearly constant at about 60 %, suggesting good optical uniformity. I-V measurements using Au-Pd ohmic contacts showed a composition dependent increase in resistance, reaching ∼2 × 108 Ω at 4 % Se without intentional donor doping. Magnetic measurements confirmed paramagnetism across all compositions with marginal increase in saturation magnetization and internal coercivity arising from Mn-anion exchange interactions. The results demonstrate that Se alloying enhances electrical resistance while preserving stable paramagnetic behavior, making CdMnTeSe a promising material for room temperature radiation detectors and magneto-optical applications.
{"title":"Growth and characterization of Cd0.90Mn0.10Te1-ySey single crystals: Compositional influence on physical properties","authors":"Staines Obed James Johnson , Rajesh Paulraj , Rachna Selvamani , Rekha Rao","doi":"10.1016/j.mssp.2026.110457","DOIUrl":"10.1016/j.mssp.2026.110457","url":null,"abstract":"<div><div>Compositional tuning of CdTe-based II-VI semiconductors plays an important role in optimizing physical properties required for detector grade, magneto-optical and optoelectronic materials. In this work, undoped Cd<sub>0.90</sub>Mn<sub>0.10</sub>Te<sub>1-y</sub>Se<sub>y</sub> (y = 0, 0.02, 0.04, 0.06) single crystals were grown by the vertical Bridgman technique to explore the influence of selenium incorporation on their structural, optical, electrical, and magnetic behavior. All compositions confirmed a cubic zinc blende structure (F-43m), and a systematic lattice contraction, confirming Se substitution at Te sites. Optical studies revealed a linear bandgap reduction from 1.585 eV to 1.563 eV (∼3.7 meV per % Se), consistent with the redshift in photoluminescence emission attributed to intrinsic excitonic recombination. Infrared transmittance remained nearly constant at about 60 %, suggesting good optical uniformity. I-V measurements using Au-Pd ohmic contacts showed a composition dependent increase in resistance, reaching ∼2 × 10<sup>8</sup> Ω at 4 % Se without intentional donor doping. Magnetic measurements confirmed paramagnetism across all compositions with marginal increase in saturation magnetization and internal coercivity arising from Mn-anion exchange interactions. The results demonstrate that Se alloying enhances electrical resistance while preserving stable paramagnetic behavior, making CdMnTeSe a promising material for room temperature radiation detectors and magneto-optical applications.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"206 ","pages":"Article 110457"},"PeriodicalIF":4.6,"publicationDate":"2026-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146035063","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-05-01Epub Date: 2026-01-22DOI: 10.1016/j.mssp.2026.110434
Chandralina Patra, Debajyoti Das
Developing highly conductive p-type nanocrystalline silicon (p-nc-Si) at low substrate temperatures remains a significant challenge due to insufficient crystallinity and high defect densities. In this work, B-doped nc-Si thin films were prepared in low-pressure inductively-coupled SiH4 plasma, without additional H2-dilution, where efficient in-situ generation of high-density atomic-H enables the desired film growth at a substrate temperature (TS) as low as ∼30 °C. At this temperature, the film maintains substantial crystallinity (∼80%), moderate conductivity (∼1 S cm−1), and a wide optical band gap (∼1.82 eV). At higher TS, increased thermal energy enhances crystallinity and promotes a faster growth rate through thermodynamically favored <220> orientation, resulting in a significant I<220>/I<111> ratio (∼9.05) and conductivity of ∼10 S cm−1. A more crystalline network with low H-content causes a notable shift of the Fermi level within the band-tail states, leading to two separate Meyer-Neldel characteristic energies. The novelty of the work lies in demonstrating a low-temperature route to obtaining the preferred <220>-oriented, highly conductive p-nc-Si thin film without any additional H2-dilution or post-annealing. The combination of excellent crystallinity, preferred orientation, wide optical band gap, and strong optoelectronic performance makes these films promising as a doped contact layer in silicon solar cells.
由于结晶度不足和缺陷密度高，在低衬底温度下开发高导电性p型纳米晶硅（p-nc-Si）仍然是一个重大挑战。在这项工作中，在低压电感耦合SiH4等离子体中制备了b掺杂的纳米硅薄膜，没有额外的h2稀释，其中高密度原子h的高效原位生成能够在低至~ 30°C的衬底温度（TS）下实现所需的薄膜生长。在此温度下，薄膜保持了较高的结晶度（~ 80%）、中等导电性（~ 1 S cm−1）和较宽的光学带隙（~ 1.82 eV）。在较高的TS下，增加的热能增强了结晶度，并通过热力学有利的<；220>；取向促进了更快的生长速度，导致显著的I<；220>/I<111>；比（~ 9.05）和电导率（~ 10 S cm−1）。低h含量的更结晶的网络导致带尾态内费米能级的显著变化，导致两个独立的Meyer-Neldel特征能量。这项工作的新颖之处在于展示了一种低温途径来获得优选的<；220>；取向，高导电性的p-nc-Si薄膜，而无需任何额外的h2稀释或后退火。优异的结晶度、优越的取向、宽的光学带隙和强的光电性能使这些薄膜有望作为硅太阳能电池的掺杂接触层。
{"title":"Dominant <220>-oriented wide band gap B-doped nc-Si thin films for stacked-layer devices","authors":"Chandralina Patra, Debajyoti Das","doi":"10.1016/j.mssp.2026.110434","DOIUrl":"10.1016/j.mssp.2026.110434","url":null,"abstract":"<div><div>Developing highly conductive <em>p</em>-type nanocrystalline silicon (<em>p</em>-nc-Si) at low substrate temperatures remains a significant challenge due to insufficient crystallinity and high defect densities. In this work, B-doped nc-Si thin films were prepared in low-pressure inductively-coupled SiH<sub>4</sub> plasma, without additional H<sub>2</sub>-dilution, where efficient in-situ generation of high-density atomic-H enables the desired film growth at a substrate temperature (T<sub>S</sub>) as low as ∼30 °C. At this temperature, the film maintains substantial crystallinity (∼80%), moderate conductivity (∼1 S cm<sup>−1</sup>), and a wide optical band gap (∼1.82 eV). At higher T<sub>S</sub>, increased thermal energy enhances crystallinity and promotes a faster growth rate through thermodynamically favored <220> orientation, resulting in a significant I<sub><220></sub>/I<sub><</sub><sub>111></sub> ratio (∼9.05) and conductivity of ∼10 S cm<sup>−1</sup>. A more crystalline network with low H-content causes a notable shift of the Fermi level within the band-tail states, leading to two separate Meyer-Neldel characteristic energies. The novelty of the work lies in demonstrating a low-temperature route to obtaining the preferred <220>-oriented, highly conductive <em>p</em>-nc-Si thin film without any additional H<sub>2</sub><sub>-</sub>dilution or post-annealing. The combination of excellent crystallinity, preferred orientation, wide optical band gap, and strong optoelectronic performance makes these films promising as a doped contact layer in silicon solar cells.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"206 ","pages":"Article 110434"},"PeriodicalIF":4.6,"publicationDate":"2026-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146035111","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-05-01Epub Date: 2026-01-23DOI: 10.1016/j.mssp.2026.110440
Na Li, Siyi Yu, Kuo Gao, Yiman Bei, Siyu Yan, Haitong Nan, Fengfeng Li, Guiqin Hou
Long-persistence luminescent (LPL) materials, distinguished by their unique optical properties, demonstrate significant potential in anti-counterfeiting and biological imaging applications. This study achieved comprehensive performance optimization of CaGa2O4 materials through systematic modulation of Lu3+ doping concentration (0.5–2.5 mol%). Experimental results reveal that doping Lu3+ to 2.0 mol% yields the highest residual intensity with the longest duration (60s,35 % intensity retention), supported by systematic characterization via X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and fluorescence analysis. These findings confirm Lu3+ preferential occupation of Ca2+ lattice sites and demonstrate that oxygen vacancy traps are optimized through doping control, elucidating the intrinsic luminescence mechanism. Leveraging the material's dynamic decay characteristics, we developed a screen-printed anti-counterfeiting pattern enabling multi-period temporal information variations. This innovation provides crucial theoretical support for optimizing long-persistence materials and pioneering their application in anti-counterfeiting technologies.
{"title":"Study on luminescence properties and anti-counterfeiting applications of CaGa2O4 doped Lu3+ long afterglow materials","authors":"Na Li, Siyi Yu, Kuo Gao, Yiman Bei, Siyu Yan, Haitong Nan, Fengfeng Li, Guiqin Hou","doi":"10.1016/j.mssp.2026.110440","DOIUrl":"10.1016/j.mssp.2026.110440","url":null,"abstract":"<div><div>Long-persistence luminescent (LPL) materials, distinguished by their unique optical properties, demonstrate significant potential in anti-counterfeiting and biological imaging applications. This study achieved comprehensive performance optimization of CaGa<sub>2</sub>O<sub>4</sub> materials through systematic modulation of Lu<sup>3+</sup> doping concentration (0.5–2.5 mol%). Experimental results reveal that doping Lu<sup>3+</sup> to 2.0 mol% yields the highest residual intensity with the longest duration (60s,35 % intensity retention), supported by systematic characterization via X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and fluorescence analysis. These findings confirm Lu<sup>3+</sup> preferential occupation of Ca<sup>2+</sup> lattice sites and demonstrate that oxygen vacancy traps are optimized through doping control, elucidating the intrinsic luminescence mechanism. Leveraging the material's dynamic decay characteristics, we developed a screen-printed anti-counterfeiting pattern enabling multi-period temporal information variations. This innovation provides crucial theoretical support for optimizing long-persistence materials and pioneering their application in anti-counterfeiting technologies.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"206 ","pages":"Article 110440"},"PeriodicalIF":4.6,"publicationDate":"2026-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146035110","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-05-01Epub Date: 2026-01-05DOI: 10.1016/j.mssp.2025.110400
Maxwell F.L. Garcia , Luis C.C. Arzuza , Allan J.M. Araújo , Rafael A. Raimundo , Gelmires A. Neves , Daniel A. Macedo , Francisco J.A. Loureiro , Romualdo R. Menezes
Electrochemical water splitting (EWS) into hydrogen and oxygen is essential for clean energy and a sustainable future. However, the most significant obstacle is the several anode oxygen evolution reaction (OER) processes, which limit practical applications. Nanofibers are one-dimensional materials with a large surface area, making them ideal to produce electrodes. By adjusting their secondary morphology (porosity, roughness, or grooves), their catalytic properties can be improved. This work emphasizes the production of porous ceramic fibers by solution blow spinning (SBS) method in conjunction with a cryogenic bath and phase separation by freeze-drying. Co3O4 Cryo-SBS nanofibers enhance the OER properties by altering their surface morphology, creating more porosity for better access to active sites and improved surface reactivity. The significant performance of the cryogenic nanofibers required an overpotentials of η10 = 320 mV in solution 1M KOH, whereas SBS-produced nanofibers typically require 353 mV for the same current density. At high current densities, Cryo-SBS nanofibers showed good performance for OER at an industrial scale. The overpotential values are like those of many metal oxides/hydroxides and reference materials like commercial IrO2 and RuO2. The results show that the modification of the nanofibers surface by freezing was effective in increasing the OER activity.
{"title":"Solution blow spun porous cobalt oxide nanofibers via cryogenic bath as oxygen evolution catalysts","authors":"Maxwell F.L. Garcia , Luis C.C. Arzuza , Allan J.M. Araújo , Rafael A. Raimundo , Gelmires A. Neves , Daniel A. Macedo , Francisco J.A. Loureiro , Romualdo R. Menezes","doi":"10.1016/j.mssp.2025.110400","DOIUrl":"10.1016/j.mssp.2025.110400","url":null,"abstract":"<div><div>Electrochemical water splitting (EWS) into hydrogen and oxygen is essential for clean energy and a sustainable future. However, the most significant obstacle is the several anode oxygen evolution reaction (OER) processes, which limit practical applications. Nanofibers are one-dimensional materials with a large surface area, making them ideal to produce electrodes. By adjusting their secondary morphology (porosity, roughness, or grooves), their catalytic properties can be improved. This work emphasizes the production of porous ceramic fibers by solution blow spinning (SBS) method in conjunction with a cryogenic bath and phase separation by freeze-drying. Co<sub>3</sub>O<sub>4</sub> Cryo-SBS nanofibers enhance the OER properties by altering their surface morphology, creating more porosity for better access to active sites and improved surface reactivity. The significant performance of the cryogenic nanofibers required an overpotentials of η<sub>10</sub> = 320 mV in solution 1M KOH, whereas SBS-produced nanofibers typically require 353 mV for the same current density. At high current densities, Cryo-SBS nanofibers showed good performance for OER at an industrial scale. The overpotential values are like those of many metal oxides/hydroxides and reference materials like commercial IrO<sub>2</sub> and RuO<sub>2</sub>. The results show that the modification of the nanofibers surface by freezing was effective in increasing the OER activity.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"206 ","pages":"Article 110400"},"PeriodicalIF":4.6,"publicationDate":"2026-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145895938","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-05-01Epub Date: 2026-01-12DOI: 10.1016/j.mssp.2026.110427
Zhijie Qiu , Xiaofeng Jiang , Puqi Ning , Tao Fan , Dan Zheng , Xuhui Wen
This paper proposes a compound stochastic process degradation modeling approach for lifetime prognostics of power module bonding wires under non-constant stress conditions. The primary challenge in predicting the remaining useful life (RUL) of bonding wires lies in accurately characterizing both continuous thermal fatigue evolution and abrupt degradation jumps caused by random bond wire lift-offs, especially under dynamic stress conditions. To address this, a hybrid modeling framework integrating compound Poisson processes (CPP) with a state-dependent degradation dynamics model is developed. The continuous degradation increments are modeled using a Wiener process with drift, whose parameters are estimated via Relevance Vector Machine (RVM) to capture complex state-load coupling effects. Stochastic jumps induced by bond wire lift-offs are characterized by a state-dependent CPP, with parameters estimated through Variational Bayesian (VB) approach. Monte Carlo simulation is employed to approximate the first passage time (FPT) for RUL prediction, with the median of the RUL probability distribution adopted as the final result to ensure robustness in asymmetric distributions. Validation with 6 devices under test (DUTs) under different stress conditions shows that this method significantly outperforms traditional empirical models (e.g., LESIT) and time-series data-driven models (e.g., LSTM) in terms of prediction accuracy, especially in the near-end-of-life stage. This framework supports real-time updatable RUL prediction, providing strong support for predictive maintenance in power electronics systems.
Pub Date : 2026-05-01Epub Date: 2026-01-16DOI: 10.1016/j.mssp.2026.110437
Ahmad Fauzi , Latifa Hanum Lalasari , Slamet Priyono , Januar Irawan , Eko Sulistiyono , Iwan Setiawan , Tri Arini , Lia Andriyah , Ariyo Suharyanto , Florentinus Firdiyono , Badrut Tamam Ibnu Ali , Akhmad Herman Yuwono
The growing demand for sustainable and cost-effective lithium-ion batteries (LIBs) has motivated the exploration of alternative anode materials and precursor sources beyond conventional graphite and high-purity commercial titanium compounds. Lithium titanate (Li4Ti5O12, LTO) is recognized for its excellent structural stability and intrinsic safety; however, its large-scale deployment is limited by the cost of its precursors and processing complexity. In this study, a mineral-to-electrode synthesis strategy was developed by producing LTO from ilmenite-derived titanium oxysulfate (TiOSO4) obtained through a sulfate-based hydrometallurgical process, replacing conventional commercial TiO2 precursors. LTO was synthesized via a solid-state reaction followed by calcination at 550, 650, 750, and 850 °C. The resulting materials were characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), electrochemical impedance spectroscopy (EIS), cyclic voltammetry (CV), and galvanostatic charge–discharge measurements. XRD analysis confirmed the progressive formation of the spinel LTO phase with the highest predominant LTO content (∼84.7 %) obtained at 850 °C, with minor rutile and anatase phases still present, accompanied by crystallite growth from ∼6 to ∼120 nm as the calcination temperature increased. Electrochemical characterization revealed that the calcination temperature strongly influenced the phase evolution, interfacial resistance, charge-transfer behavior, and Li-ion diffusion characteristics. Among the samples, the LTO calcined at 850 °C exhibited the most developed spinel structure and the most favorable electrochemical response, delivering a discharge capacity of ∼255 mAh g−1 at 0.1 C and ∼152 mAh g−1 at 5 C, along with stable cycling behavior. These results demonstrate the feasibility of converting abundant natural ilmenite into electrochemically active LTO via a scalable mineral-to-electrode approach. This strategy provides a sustainable alternative to conventional precursor routes while maintaining competitive electrochemical performance for lithium-ion battery anode application.
对可持续和高性价比锂离子电池（lib）的需求不断增长，推动了对替代阳极材料和前驱体来源的探索，而不是传统的石墨和高纯度商业钛化合物。钛酸锂（Li4Ti5O12， LTO）具有优异的结构稳定性和内在安全性；然而，它的大规模部署受到其前体成本和处理复杂性的限制。在这项研究中，通过硫酸盐基湿法冶金工艺获得钛铁矿衍生的硫酸氧钛（TiOSO4），通过生产LTO取代传统的商业TiO2前驱体，开发了一种矿物到电极的合成策略。通过固相反应，在550、650、750和850℃下煅烧合成LTO。利用x射线衍射（XRD）、扫描电镜（SEM）、x射线光电子能谱（XPS）、电化学阻抗谱（EIS）、循环伏安法（CV）和恒流充放电测量对材料进行了表征。XRD分析证实，在850℃时，尖晶石LTO相逐渐形成，LTO含量最高（~ 84.7%），少量金红石和锐钛矿相仍然存在，随着煅烧温度的升高，晶体从~ 6 nm生长到~ 120 nm。电化学表征表明，煅烧温度对相演化、界面电阻、电荷转移行为和锂离子扩散特性有较大影响。其中，850℃煅烧的LTO具有最发达的尖晶石结构和最有利的电化学响应，在0.1℃和5℃下的放电容量分别为~ 255 mAh g−1和~ 152 mAh g−1，并且具有稳定的循环行为。这些结果证明了通过可扩展的矿物-电极方法将丰富的天然钛铁矿转化为电化学活性的LTO的可行性。该策略为传统前驱体路线提供了可持续的替代方案，同时保持了锂离子电池阳极应用中具有竞争力的电化学性能。
{"title":"Ilmenite-derived sub-micron aggregates of Li4Ti5O12 nanocrystallites for lithium-ion battery anodes","authors":"Ahmad Fauzi , Latifa Hanum Lalasari , Slamet Priyono , Januar Irawan , Eko Sulistiyono , Iwan Setiawan , Tri Arini , Lia Andriyah , Ariyo Suharyanto , Florentinus Firdiyono , Badrut Tamam Ibnu Ali , Akhmad Herman Yuwono","doi":"10.1016/j.mssp.2026.110437","DOIUrl":"10.1016/j.mssp.2026.110437","url":null,"abstract":"<div><div>The growing demand for sustainable and cost-effective lithium-ion batteries (LIBs) has motivated the exploration of alternative anode materials and precursor sources beyond conventional graphite and high-purity commercial titanium compounds. Lithium titanate (Li<sub>4</sub>Ti<sub>5</sub>O<sub>12</sub>, LTO) is recognized for its excellent structural stability and intrinsic safety; however, its large-scale deployment is limited by the cost of its precursors and processing complexity. In this study, a mineral-to-electrode synthesis strategy was developed by producing LTO from ilmenite-derived titanium oxysulfate (TiOSO<sub>4</sub>) obtained through a sulfate-based hydrometallurgical process, replacing conventional commercial TiO<sub>2</sub> precursors. LTO was synthesized via a solid-state reaction followed by calcination at 550, 650, 750, and 850 °C. The resulting materials were characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), electrochemical impedance spectroscopy (EIS), cyclic voltammetry (CV), and galvanostatic charge–discharge measurements. XRD analysis confirmed the progressive formation of the spinel LTO phase with the highest predominant LTO content (∼84.7 %) obtained at 850 °C, with minor rutile and anatase phases still present, accompanied by crystallite growth from ∼6 to ∼120 nm as the calcination temperature increased. Electrochemical characterization revealed that the calcination temperature strongly influenced the phase evolution, interfacial resistance, charge-transfer behavior, and Li-ion diffusion characteristics. Among the samples, the LTO calcined at 850 °C exhibited the most developed spinel structure and the most favorable electrochemical response, delivering a discharge capacity of ∼255 mAh g<sup>−1</sup> at 0.1 C and ∼152 mAh g<sup>−1</sup> at 5 C, along with stable cycling behavior. These results demonstrate the feasibility of converting abundant natural ilmenite into electrochemically active LTO via a scalable mineral-to-electrode approach. This strategy provides a sustainable alternative to conventional precursor routes while maintaining competitive electrochemical performance for lithium-ion battery anode application.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"206 ","pages":"Article 110437"},"PeriodicalIF":4.6,"publicationDate":"2026-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145979473","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-05-01Epub Date: 2026-01-21DOI: 10.1016/j.mssp.2026.110452
Jian Qiao , Jiheng Wang , Zhenduo Wu , Junjie Li , Jingwei Yang , Xinhan Peng , Ruhai Guo
During the mass transfer of Micro-LED chips, issues such as chip misalignment and thermal stress arise, reducing bonding yield and hindering the widespread adoption of Micro-LED technology. This paper focuses on laser in-situ repair technology for defective chips. A three-dimensional transient thermo-mechanical coupled finite element model was established to investigate influence of bonding layer dimensions and chip misalignments on the stress and strain in the bonding layer. Laser repair bonding experiments were conducted to validate the simulation results and optimize the bonding parameters. The results showed that the numerical analysis exhibits an error of less than 2.77 %, offering guidance for optimizing bonding process parameters. Moreover, with a laser power of 0.049–0.058 W and a bonding time of 2–4 s, the bonding temperature can be controlled within 490 K–550 K, enabling stable, damage-free, and effective chip bonding. For a bonding layer specification of 15 μm × 10 μm × 2 μm, the stress and strain levels are relatively low, with equivalent residual stress and residual plastic strain reduced by at least 3.04 % and 50.96 %, respectively. Bonding failure occurs when the chip rotational misalignment θ exceeds 10°, the X-axis offset Δx exceeds 1 μm, the Y-axis offset Δy exceeds 2 μm, or the tilt angles α/β exceed 1°, primarily due to altered stress and strain states and a reduced bonding area. Therefore, the study of influencing factors in the laser repair bonding technology of defective Micro-LED chips provides significant guidance for the commercial application of panel-level Micro-LED technology.
{"title":"Research on influencing factors of laser repair bonding for panel-level Micro-LED chips","authors":"Jian Qiao , Jiheng Wang , Zhenduo Wu , Junjie Li , Jingwei Yang , Xinhan Peng , Ruhai Guo","doi":"10.1016/j.mssp.2026.110452","DOIUrl":"10.1016/j.mssp.2026.110452","url":null,"abstract":"<div><div>During the mass transfer of Micro-LED chips, issues such as chip misalignment and thermal stress arise, reducing bonding yield and hindering the widespread adoption of Micro-LED technology. This paper focuses on laser in-situ repair technology for defective chips. A three-dimensional transient thermo-mechanical coupled finite element model was established to investigate influence of bonding layer dimensions and chip misalignments on the stress and strain in the bonding layer. Laser repair bonding experiments were conducted to validate the simulation results and optimize the bonding parameters. The results showed that the numerical analysis exhibits an error of less than 2.77 %, offering guidance for optimizing bonding process parameters. Moreover, with a laser power of 0.049–0.058 W and a bonding time of 2–4 s, the bonding temperature can be controlled within 490 K–550 K, enabling stable, damage-free, and effective chip bonding. For a bonding layer specification of 15 μm × 10 μm × 2 μm, the stress and strain levels are relatively low, with equivalent residual stress and residual plastic strain reduced by at least 3.04 % and 50.96 %, respectively. Bonding failure occurs when the chip rotational misalignment <em>θ</em> exceeds 10°, the <em>X</em>-axis offset Δ<em>x</em> exceeds 1 μm, the <em>Y</em>-axis offset Δ<em>y</em> exceeds 2 μm, or the tilt angles <em>α</em>/<em>β</em> exceed 1°, primarily due to altered stress and strain states and a reduced bonding area. Therefore, the study of influencing factors in the laser repair bonding technology of defective Micro-LED chips provides significant guidance for the commercial application of panel-level Micro-LED technology.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"206 ","pages":"Article 110452"},"PeriodicalIF":4.6,"publicationDate":"2026-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146035113","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-05-01Epub Date: 2026-01-07DOI: 10.1016/j.mssp.2026.110411
Qibiao Yang , Zhihao Huang , Qingdong Zeng , Jian Cheng , Lie Chen , Deyuan Lou , Hui Wan , Qianliang Li , Dun Liu
A flexible ionic pressure sensor with composite microstructures was fabricated via a laser-assisted templating method. Through layer-by-layer femtosecond laser ablation of an ABS template, a high-quality ionic gel film with a hierarchical cooperative composite microstructure (HCCM) array was constructed. Theoretical analysis and finite element simulations revealed that the HCCM array enhances sensitivity through a hierarchical mechanical response mechanism while sustaining a broad sensing range. The sensor exhibits a sensitivity of 9480 kPa−1 within a wide pressure range of 182 kPa, along with a rapid response time of 50 ms, a detection limit as low as 46.06 Pa, and stable capacitance performance over 2400 loading/unloading cycles. Experimental results further demonstrated its potential for pulse monitoring, muscle activity recognition, and non-contact airflow detection. Its cost-effectiveness, stability, and outstanding performance provide a promising pathway for structural optimization and practical implementation of next-generation flexible electronic devices.
{"title":"Fabrication of laser-assisted hierarchical cooperative composite microstructured ionic pressure sensors","authors":"Qibiao Yang , Zhihao Huang , Qingdong Zeng , Jian Cheng , Lie Chen , Deyuan Lou , Hui Wan , Qianliang Li , Dun Liu","doi":"10.1016/j.mssp.2026.110411","DOIUrl":"10.1016/j.mssp.2026.110411","url":null,"abstract":"<div><div>A flexible ionic pressure sensor with composite microstructures was fabricated via a laser-assisted templating method. Through layer-by-layer femtosecond laser ablation of an ABS template, a high-quality ionic gel film with a hierarchical cooperative composite microstructure (HCCM) array was constructed. Theoretical analysis and finite element simulations revealed that the HCCM array enhances sensitivity through a hierarchical mechanical response mechanism while sustaining a broad sensing range. The sensor exhibits a sensitivity of 9480 kPa<sup>−1</sup> within a wide pressure range of 182 kPa, along with a rapid response time of 50 ms, a detection limit as low as 46.06 Pa, and stable capacitance performance over 2400 loading/unloading cycles. Experimental results further demonstrated its potential for pulse monitoring, muscle activity recognition, and non-contact airflow detection. Its cost-effectiveness, stability, and outstanding performance provide a promising pathway for structural optimization and practical implementation of next-generation flexible electronic devices.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"206 ","pages":"Article 110411"},"PeriodicalIF":4.6,"publicationDate":"2026-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145940936","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-05-01Epub Date: 2026-01-09DOI: 10.1016/j.mssp.2025.110401
Wei Liu, Shu Yang, Chunyan Yin, Guangbin Dou
The performance of out-of-plane (Z-axis) capacitive accelerometers represents a critical bottleneck constraining the overall accuracy of monolithically integrated triaxial MEMS, particularly in high-performance applications. This paper presents a comprehensive review of the micro-mechanical structures and performance enhancement strategies developed to overcome this limitation. We systematically deconstruct the two principal design archetypes: vertical displacement structures, whose evolution from simple straight beams to complex serpentine and double-layer symmetric configurations is charted, and torsional-pendulum structures, which leverage rotational mechanics for compact, sensitive devices. The review then synthesizes the core performance enhancement strategies, which are presented as a two-front endeavor: maximizing sensitivity and minimizing noise. Sensitivity enhancement is detailed as a synergistic optimization of mechanical response and electrical transduction. Noise suppression is likewise systematically addressed, with distinct strategies for mitigating mechanical–thermal noise at the physical source and circuit noise throughout the signal path. Highlighting a departure from conventional silicon-based fabrication, we also survey the transformative potential of emerging manufacturing processes — including PCB-based fabrication, LTCC, 3D printing, and WEDM — which offer new paradigms in materials, cost, and structural complexity. Finally, an outlook is provided, projecting a trajectory towards deep integration of materials and processes, intelligent on-chip systems, and application-driven specialization.
{"title":"A review of out-of-plane structural designs and performance enhancement strategies for MEMS Z-axis capacitive accelerometers","authors":"Wei Liu, Shu Yang, Chunyan Yin, Guangbin Dou","doi":"10.1016/j.mssp.2025.110401","DOIUrl":"10.1016/j.mssp.2025.110401","url":null,"abstract":"<div><div>The performance of out-of-plane (Z-axis) capacitive accelerometers represents a critical bottleneck constraining the overall accuracy of monolithically integrated triaxial MEMS, particularly in high-performance applications. This paper presents a comprehensive review of the micro-mechanical structures and performance enhancement strategies developed to overcome this limitation. We systematically deconstruct the two principal design archetypes: vertical displacement structures, whose evolution from simple straight beams to complex serpentine and double-layer symmetric configurations is charted, and torsional-pendulum structures, which leverage rotational mechanics for compact, sensitive devices. The review then synthesizes the core performance enhancement strategies, which are presented as a two-front endeavor: maximizing sensitivity and minimizing noise. Sensitivity enhancement is detailed as a synergistic optimization of mechanical response and electrical transduction. Noise suppression is likewise systematically addressed, with distinct strategies for mitigating mechanical–thermal noise at the physical source and circuit noise throughout the signal path. Highlighting a departure from conventional silicon-based fabrication, we also survey the transformative potential of emerging manufacturing processes — including PCB-based fabrication, LTCC, 3D printing, and <span><math><mi>μ</mi></math></span>WEDM — which offer new paradigms in materials, cost, and structural complexity. Finally, an outlook is provided, projecting a trajectory towards deep integration of materials and processes, intelligent on-chip systems, and application-driven specialization.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"206 ","pages":"Article 110401"},"PeriodicalIF":4.6,"publicationDate":"2026-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145940939","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-05-01Epub Date: 2026-01-06DOI: 10.1016/j.mssp.2025.110403
Gang Liu , Baonan Jia , Zhengjun Wang , Shengjiao Qian , Bohao Cui , Yuxi Bi , Chao Dong , Changcheng Chen , Pengfei Lu
Double perovskites have attracted significant attention due to their ability to modulate photovoltaic properties and exhibit higher stability through elemental control. However, most double perovskites face the challenges of large band gap ranges and indirect band gaps. To enhance the performance of fully inorganic double perovskites and reduce the use of lead, this study employs a combination of density functional theory (DFT) and the SISSO algorithm in machine learning to investigate the structural, stability, electronic, and optical properties of lead-free halide double perovskite Cs2B'AgX6 (B' = Ir, Rh; X = Cl, Br, and I). The results of thermodynamic stability and electronic properties show that these double perovskites have higher stability than lead-based perovskites and exhibit an appropriate band gap range for optoelectronic applications. The band gap decreases from 0.89 eV to 1.6 eV as halogen elements are substituted from Cl to I. Moreover, the double perovskite demonstrates strong light absorption. These results suggest that Cs2B'AgX6 (B' = Ir, Rh; X = Cl, Br, and I) double perovskites hold great potential in optoelectronic applications.
双钙钛矿由于其能够通过元素控制调制光伏特性并表现出更高的稳定性而引起了人们的极大关注。然而，大多数双钙钛矿都面临着大带隙范围和间接带隙的挑战。为了提高全无机双钙钛矿的性能，减少铅的使用，本研究结合密度泛函理论（DFT）和机器学习中的SISSO算法，研究了无铅卤化物双钙钛矿Cs2B' agx6 （B' = Ir, Rh; X = Cl, Br, and I）的结构、稳定性、电子和光学性质。热力学稳定性和电子性能的结果表明，这些双钙钛矿比铅基钙钛矿具有更高的稳定性，并且具有合适的光电应用带隙范围。当卤素元素由Cl取代为i时，带隙从0.89 eV减小到1.6 eV，双钙钛矿具有较强的光吸收能力。这些结果表明Cs2B' agx6 （B' = Ir, Rh; X = Cl, Br, and I）双钙钛矿在光电应用中具有很大的潜力。
{"title":"First-principles study of lead-free halide double perovskite Cs2B'AgX6 (B'=Ir, Rh, X = Cl, Br, and I) as potential material in optoelectronic devices with SISSO-based feature selection","authors":"Gang Liu , Baonan Jia , Zhengjun Wang , Shengjiao Qian , Bohao Cui , Yuxi Bi , Chao Dong , Changcheng Chen , Pengfei Lu","doi":"10.1016/j.mssp.2025.110403","DOIUrl":"10.1016/j.mssp.2025.110403","url":null,"abstract":"<div><div>Double perovskites have attracted significant attention due to their ability to modulate photovoltaic properties and exhibit higher stability through elemental control. However, most double perovskites face the challenges of large band gap ranges and indirect band gaps. To enhance the performance of fully inorganic double perovskites and reduce the use of lead, this study employs a combination of density functional theory (DFT) and the SISSO algorithm in machine learning to investigate the structural, stability, electronic, and optical properties of lead-free halide double perovskite Cs<sub>2</sub>B'AgX<sub>6</sub> (B' = Ir, Rh; X = Cl, Br, and I). The results of thermodynamic stability and electronic properties show that these double perovskites have higher stability than lead-based perovskites and exhibit an appropriate band gap range for optoelectronic applications. The band gap decreases from 0.89 eV to 1.6 eV as halogen elements are substituted from Cl to I. Moreover, the double perovskite demonstrates strong light absorption. These results suggest that Cs<sub>2</sub>B'AgX<sub>6</sub> (B' = Ir, Rh; X = Cl, Br, and I) double perovskites hold great potential in optoelectronic applications.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"206 ","pages":"Article 110403"},"PeriodicalIF":4.6,"publicationDate":"2026-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145940874","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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