Pub Date : 2025-02-13DOI: 10.1016/j.mssp.2025.109382
Shuyi Zhang , Xuqiang Liu , Minqiang Liu , Meng Li , Fang Deng , Abuduwayiti Aierken
This paper aims to study the degradation mechanism of GaInP/GaAs/InGaAs flexible (Inverted Metamorphic) IMM triple-junction solar cells (3JSCs) caused by 14 MeV neutron irradiation. We present the analysis of the electrical performance of IMM 3JSCs before and after the irradiation including light and dark I-V characteristics, as well as the spectral response of each sub-cells. The results show that the electrical parameters decrease with increasing neutron fluence, especially under the higher fluence (8.00 × 1012 n/cm2), the short circuit current (Isc), open circuit voltage (Voc) and conversion efficiency (Eff) drop to 93.23 %, 86.04 % and 74.48 % of its initial values, respectively. At the same time, under the fluence of 8.00 × 1012 n/cm2, the series resistance (Rs) increased to 1.38 times of the unirradiated value, while the shunt resistance (Rsh) decreased to 0.12 times of the initial value. In addition, the degradation level of external quantum efficiency, EQE, for each sub-cell implies that the GaInP top cell has better radiation resistance, GaAs middle cell degrades in long wavelength region of spectrum with increasing the fluence. The severe degradation occurs in the InGaAs bottom cell under the fluence of 8.00 × 1012 n/cm2, the EQE is reduced by 15 % compared to unirradiated solar cell.
{"title":"Radiation effects of flexible IMM triple junction solar cell under 14 MeV neutron irradiation","authors":"Shuyi Zhang , Xuqiang Liu , Minqiang Liu , Meng Li , Fang Deng , Abuduwayiti Aierken","doi":"10.1016/j.mssp.2025.109382","DOIUrl":"10.1016/j.mssp.2025.109382","url":null,"abstract":"<div><div>This paper aims to study the degradation mechanism of GaInP/GaAs/InGaAs flexible (Inverted Metamorphic) IMM triple-junction solar cells (3JSCs) caused by 14 MeV neutron irradiation. We present the analysis of the electrical performance of IMM 3JSCs before and after the irradiation including light and dark <em>I-V</em> characteristics, as well as the spectral response of each sub-cells. The results show that the electrical parameters decrease with increasing neutron fluence, especially under the higher fluence (8.00 × 10<sup>12</sup> n/cm<sup>2</sup>), the short circuit current (<em>I</em><sub><em>sc</em></sub>), open circuit voltage (<em>V</em><sub><em>oc</em></sub>) and conversion efficiency (<em>Eff</em>) drop to 93.23 %, 86.04 % and 74.48 % of its initial values, respectively. At the same time, under the fluence of 8.00 × 10<sup>12</sup> n/cm<sup>2</sup>, the series resistance (<em>R</em><sub><em>s</em></sub>) increased to 1.38 times of the unirradiated value, while the shunt resistance (<em>R</em><sub><em>sh</em></sub>) decreased to 0.12 times of the initial value. In addition, the degradation level of external quantum efficiency, EQE, for each sub-cell implies that the GaInP top cell has better radiation resistance, GaAs middle cell degrades in long wavelength region of spectrum with increasing the fluence. The severe degradation occurs in the InGaAs bottom cell under the fluence of 8.00 × 10<sup>12</sup> n/cm<sup>2</sup>, the EQE is reduced by 15 % compared to unirradiated solar cell.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"191 ","pages":"Article 109382"},"PeriodicalIF":4.2,"publicationDate":"2025-02-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143394564","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-02-13DOI: 10.1016/j.mssp.2025.109355
Reem Abd-Alkader , Arafa Hassen , Ahmed A. Maarouf , Mohamed M. Fadlallah
Graphene nanomeshes (GNMs) are porous structures that have attracted theoretical and experimental interest over the past decade. Pores of pristine graphene nanomeshes must be passivated by some species (X) to give chemically stable structures (X-GNM). Here, we consider semiconducting GNMs passivated with H, N, and O. We study substitutional implantation of X-GNM with transition metal elements M (M=Sc, Ti, V, Mn, Co, Ni, Cu, Zn), taking into account various doping locations from the center of the pore (P1, P2, P3, P4 and P5 located at 11.47 Å, 10.03 Å, 7.34 Å, 5.57 Å, and 5.98 Å, respectively). We seek to understand how altering the position of the dopant can influence the electronic and magnetic properties of GNM using density functional theory. The pore induces new symmetries compared to the parent graphene structure, requiring the consideration of various doping positions in the X-GNM unit cell. The doped H-GNM structures remain planar, whereas the M atoms in the (N, O)-GNM structures protrude from the plane. The M-(N, O)-GNM systems generally demonstrated stability greater than that of the M-H-GNM, with Co-H-, Ti-(N, O)-GNMs being the most stable structures. We find that the electronic properties and magnetization of the M-X-GNM are M- and X-dependent. Structures can be semiconductors, diluted magnetic semiconductors (DMSC), and metals. Notably, we find that the Ti-X-, the Ni-(N, O)-, and the Zn-N-GNMs are semiconductors, irrespective of the doping location. The (Mn, Co)-(N, O)-, V-(H, O)-, and Cu-N-GNMs are DMSCs, while the (Sc, Co, Cu)-H- and Cu-O-GNMs are metals. The V-N-GNM at position P2 and Co-O-GNM at position P4 are half-metallic systems, and can thus be used in spintronic applications. Our results can be valuable for designing graphene-based semiconductor and spintronic devices.
{"title":"Transition metal substitutional doping of graphene nanomeshes: Structural, electronic, and magnetic properties","authors":"Reem Abd-Alkader , Arafa Hassen , Ahmed A. Maarouf , Mohamed M. Fadlallah","doi":"10.1016/j.mssp.2025.109355","DOIUrl":"10.1016/j.mssp.2025.109355","url":null,"abstract":"<div><div>Graphene nanomeshes (GNMs) are porous structures that have attracted theoretical and experimental interest over the past decade. Pores of pristine graphene nanomeshes must be passivated by some species (X) to give chemically stable structures (X-GNM). Here, we consider semiconducting GNMs passivated with H, N, and O. We study substitutional implantation of X-GNM with transition metal elements M (M=Sc, Ti, V, Mn, Co, Ni, Cu, Zn), taking into account various doping locations from the center of the pore (P1, P2, P3, P4 and P5 located at 11.47 Å, 10.03 Å, 7.34 Å, 5.57 Å, and 5.98 Å, respectively). We seek to understand how altering the position of the dopant can influence the electronic and magnetic properties of GNM using density functional theory. The pore induces new symmetries compared to the parent graphene structure, requiring the consideration of various doping positions in the X-GNM unit cell. The doped H-GNM structures remain planar, whereas the M atoms in the (N, O)-GNM structures protrude from the plane. The M-(N, O)-GNM systems generally demonstrated stability greater than that of the M-H-GNM, with Co-H-, Ti-(N, O)-GNMs being the most stable structures. We find that the electronic properties and magnetization of the M-X-GNM are M- and X-dependent. Structures can be semiconductors, diluted magnetic semiconductors (DMSC), and metals. Notably, we find that the Ti-X-, the Ni-(N, O)-, and the Zn-N-GNMs are semiconductors, irrespective of the doping location. The (Mn, Co)-(N, O)-, V-(H, O)-, and Cu-N-GNMs are DMSCs, while the (Sc, Co, Cu)-H- and Cu-O-GNMs are metals. The V-N-GNM at position P2 and Co-O-GNM at position P4 are half-metallic systems, and can thus be used in spintronic applications. Our results can be valuable for designing graphene-based semiconductor and spintronic devices.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"191 ","pages":"Article 109355"},"PeriodicalIF":4.2,"publicationDate":"2025-02-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143394571","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-02-13DOI: 10.1016/j.mssp.2025.109371
Hoon-Ki Lee , V. Janardhanam , Jae-Kyoung Mun , Tae-Hoon Jang , Kyu-Hwan Shim , Hyung Joong Yun , Jonghan Won , Chel-Jong Choi
In the present study, the device performance of vertical Au/Ni/β-Ga2O3 Schottky barrier diodes with regularly aligned inner field plates is investigated. The fabricated Schottky barrier diode with regularly aligned inner field plates achieved an improved breakdown voltage (VBR) of 590 V, compared to the 500 V for the diode without field plates. However, the power figure-of-merit (FOM) of the diode with inner field plates was determined to be 31.9 MWcm−2, which is lower than the FOM of 48.2 MWcm−2 for that of the diode without field plates. The FOM is decreased in the former because of its increased turn-on resistance associated with decreasing effective device area caused by the array of SiO2 field plates. A technology computer-aided design (TCAD) simulation reveals that the regularly aligned inner field plates are effective in suppressing the peak electric field distribution under the anode edges, which increases VBR. The results of this work offer a simple and effective approach for reducing electric field crowding under anode edges to enhance the performance of Ga2O3-based power devices.
{"title":"Enhancement of device performance in vertical Au/Ni/β-Ga2O3 Schottky barrier diodes using regularly aligned inner field plates","authors":"Hoon-Ki Lee , V. Janardhanam , Jae-Kyoung Mun , Tae-Hoon Jang , Kyu-Hwan Shim , Hyung Joong Yun , Jonghan Won , Chel-Jong Choi","doi":"10.1016/j.mssp.2025.109371","DOIUrl":"10.1016/j.mssp.2025.109371","url":null,"abstract":"<div><div>In the present study, the device performance of vertical Au/Ni/<em>β</em>-Ga<sub>2</sub>O<sub>3</sub> Schottky barrier diodes with regularly aligned inner field plates is investigated. The fabricated Schottky barrier diode with regularly aligned inner field plates achieved an improved breakdown voltage (<em>V</em><sub><em>BR</em></sub>) of 590 V, compared to the 500 V for the diode without field plates. However, the power figure-of-merit (FOM) of the diode with inner field plates was determined to be 31.9 MWcm<sup>−2</sup>, which is lower than the FOM of 48.2 MWcm<sup>−2</sup> for that of the diode without field plates. The FOM is decreased in the former because of its increased turn-on resistance associated with decreasing effective device area caused by the array of SiO<sub>2</sub> field plates. A technology computer-aided design (TCAD) simulation reveals that the regularly aligned inner field plates are effective in suppressing the peak electric field distribution under the anode edges, which increases <em>V</em><sub><em>BR</em></sub>. The results of this work offer a simple and effective approach for reducing electric field crowding under anode edges to enhance the performance of Ga<sub>2</sub>O<sub>3</sub>-based power devices.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"191 ","pages":"Article 109371"},"PeriodicalIF":4.2,"publicationDate":"2025-02-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143402614","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-02-13DOI: 10.1016/j.mssp.2025.109373
Filippo Fabbri, Sreyan Raha, Federica Bianco
Thanks to their strong excitonic effects and tunable bandgap, two-dimensional transition metal dichalcogenides (TMDs) are the key elements of many micro-optoelectronic, photonic, and next-generation logic devices. The performance optimization of current devices and the development of novel systems have recently boosted the engineering of the optical and electronic properties of the TMDs to externally control the dynamics of their excitons, including exciton formation, interaction, and relaxation. Among the various regulation strategies, electron-irradiation is a facile and deterministic process. Here, we employ this method to regulate the interplay among neutral and charged excitons in monolayer WSe by varying the electron dose. Specifically, we demonstrate that the interaction of 20 keV electrons with the lattice of WSe crystals and the subsequent exposure to ambient air causes the tuning of the charge doping and the formation of a compressive strain field. Their simultaneous actions result in a conversion of neutral excitons into charged ones, while their single contribution is qualitatively disentangled by correlating the binding energy with the excitons intensities. These findings significantly advance our understanding of the WSe optical emission properties engineered by electron-irradiation, shedding light on the intricate interplay between the excitons.
{"title":"The interplay between neutral and charged excitons driven by electron irradiation in monolayer WSe2","authors":"Filippo Fabbri, Sreyan Raha, Federica Bianco","doi":"10.1016/j.mssp.2025.109373","DOIUrl":"10.1016/j.mssp.2025.109373","url":null,"abstract":"<div><div>Thanks to their strong excitonic effects and tunable bandgap, two-dimensional transition metal dichalcogenides (TMDs) are the key elements of many micro-optoelectronic, photonic, and next-generation logic devices. The performance optimization of current devices and the development of novel systems have recently boosted the engineering of the optical and electronic properties of the TMDs to externally control the dynamics of their excitons, including exciton formation, interaction, and relaxation. Among the various regulation strategies, electron-irradiation is a facile and deterministic process. Here, we employ this method to regulate the interplay among neutral and charged excitons in monolayer WSe<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span> by varying the electron dose. Specifically, we demonstrate that the interaction of 20 keV electrons with the lattice of WSe<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span> crystals and the subsequent exposure to ambient air causes the tuning of the charge doping and the formation of a compressive strain field. Their simultaneous actions result in a conversion of neutral excitons into charged ones, while their single contribution is qualitatively disentangled by correlating the binding energy with the excitons intensities. These findings significantly advance our understanding of the WSe<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span> optical emission properties engineered by electron-irradiation, shedding light on the intricate interplay between the excitons.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"191 ","pages":"Article 109373"},"PeriodicalIF":4.2,"publicationDate":"2025-02-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143403291","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Yttrium oxide (Y2O3) film shows great potential as a corrosive resistant material in harsh environments, but Y2O3 film deposition methods require cost-effectiveness and high quality. To address these issues, we proposed a novel method of additive-enhancement to the Y2O3 precursor solution in plasma enhanced metal–organic chemical vapor deposition. Using this approach, we achieved YO film deposition at low cost, at low temperatures, and under atmospheric pressure conditions, specifically assisted by a microwave-excited plasma jet. Our results demonstrated that the Y2O3 surface morphology quality is notably enhanced, exhibiting a marked increase in particle density with a granular shape and well-covered homogeneous uniform coverage, suggesting enhanced nucleation and rapid growth with the increase of the carrier gas () flow rate. Results show that the highest deposition rate for Y2O3 film was achieved 87.5 nm/min. Grazing incidence X-ray diffractometry revealed excellent polycrystalline structure of Y2O3 film. X-ray photoelectron spectroscopy indicated that an increased flow rate shifts bonding from Y–O–Si to Y–O–C, revealing chemical interactions with organic residues or carbon-containing precursor solutions within the film. This method of using PE-MOCVD provides a new pathway to low-cost, low-temperature, and effective deposition of YO films.
{"title":"Carrier gas flow rate effects on additive-assisted low-temperature Y2O3 film deposition by atmospheric pressure plasma jet","authors":"Bat-Orgil Erdenezaya , Md. Shahiduzzaman , Hirochika Uratani , Ruka Yazawa , Yusuke Nakano , Yasunori Tanaka , Tetsuya Taima , Tatsuo Ishijima","doi":"10.1016/j.mssp.2025.109365","DOIUrl":"10.1016/j.mssp.2025.109365","url":null,"abstract":"<div><div>Yttrium oxide (Y<sub>2</sub>O<sub>3</sub>) film shows great potential as a corrosive resistant material in harsh environments, but Y<sub>2</sub>O<sub>3</sub> film deposition methods require cost-effectiveness and high quality. To address these issues, we proposed a novel method of additive-enhancement to the Y<sub>2</sub>O<sub>3</sub> precursor solution in plasma enhanced metal–organic chemical vapor deposition. Using this approach, we achieved Y<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span>O<span><math><msub><mrow></mrow><mrow><mn>3</mn></mrow></msub></math></span> film deposition at low cost, at low temperatures, and under atmospheric pressure conditions, specifically assisted by a microwave-excited plasma jet. Our results demonstrated that the Y<sub>2</sub>O<sub>3</sub> surface morphology quality is notably enhanced, exhibiting a marked increase in particle density with a granular shape and well-covered homogeneous uniform coverage, suggesting enhanced nucleation and rapid growth with the increase of the carrier gas (<span><math><msub><mrow><mi>Q</mi></mrow><mrow><mi>c</mi></mrow></msub></math></span>) flow rate. Results show that the highest deposition rate for Y<sub>2</sub>O<sub>3</sub> film was achieved 87.5 nm/min. Grazing incidence X-ray diffractometry revealed excellent polycrystalline structure of Y<sub>2</sub>O<sub>3</sub> film. X-ray photoelectron spectroscopy indicated that an increased <span><math><msub><mrow><mi>Q</mi></mrow><mrow><mi>c</mi></mrow></msub></math></span> flow rate shifts bonding from Y–O–Si to Y–O–C, revealing chemical interactions with organic residues or carbon-containing precursor solutions within the film. This method of using PE-MOCVD provides a new pathway to low-cost, low-temperature, and effective deposition of Y<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span>O<span><math><msub><mrow></mrow><mrow><mn>3</mn></mrow></msub></math></span> films.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"191 ","pages":"Article 109365"},"PeriodicalIF":4.2,"publicationDate":"2025-02-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143394565","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-02-12DOI: 10.1016/j.mssp.2025.109359
Dexing Cui , Baoguo Zhang , Wenhao Xian , Min Liu , Shitong Liu , Pengfei Wu , Ye Wang
Silicon carbide (SiC) is an exemplary material known for its characteristic hardness and brittleness. Achieving efficient planarization of SiC substrate is a challenging task. In this paper, the effect of enhancement for different manganese oxides in chemical mechanical polishing of 4H-SiC wafers was compared. Manganese dioxide (MnO2) provided an excellent improvement ability, compared to Manganese trioxide (Mn2O3) and Trimanganese tetroxide (Mn3O4), in chemical mechanical polishing of 4H-SiC wafers with material removal rate and surface roughness (Sq) up to 1176 nm/h and 0.258 nm, respectively. Furthermore, a synergistic enhancement method combining MnO2 and Mn3O4 was proposed to improve the polishing performance of 4H-SiC wafers. Then, the corrosion mechanism of 4H-SiC in potassium permanganate solutions with different manganese oxides was investigated by electrochemical analysis. Finally, the enhancement mechanism of manganese oxides for 4H-SiC wafers in chemical mechanical polishing was characterized and analyzed using X-ray photoelectron spectroscopy (XPS) and UV–visible spectroscopy (UV).
{"title":"Comparative study on MnO2, Mn2O3, and Mn3O4: Enhancing chemical-mechanical polishing properties of 4H-SiC silicon wafers","authors":"Dexing Cui , Baoguo Zhang , Wenhao Xian , Min Liu , Shitong Liu , Pengfei Wu , Ye Wang","doi":"10.1016/j.mssp.2025.109359","DOIUrl":"10.1016/j.mssp.2025.109359","url":null,"abstract":"<div><div>Silicon carbide (SiC) is an exemplary material known for its characteristic hardness and brittleness. Achieving efficient planarization of SiC substrate is a challenging task. In this paper, the effect of enhancement for different manganese oxides in chemical mechanical polishing of 4H-SiC wafers was compared. Manganese dioxide (MnO<sub>2</sub>) provided an excellent improvement ability, compared to Manganese trioxide (Mn<sub>2</sub>O<sub>3</sub>) and Trimanganese tetroxide (Mn<sub>3</sub>O<sub>4</sub>), in chemical mechanical polishing of 4H-SiC wafers with material removal rate and surface roughness (Sq) up to 1176 nm/h and 0.258 nm, respectively. Furthermore, a synergistic enhancement method combining MnO<sub>2</sub> and Mn<sub>3</sub>O<sub>4</sub> was proposed to improve the polishing performance of 4H-SiC wafers. Then, the corrosion mechanism of 4H-SiC in potassium permanganate solutions with different manganese oxides was investigated by electrochemical analysis. Finally, the enhancement mechanism of manganese oxides for 4H-SiC wafers in chemical mechanical polishing was characterized and analyzed using X-ray photoelectron spectroscopy (XPS) and UV–visible spectroscopy (UV).</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"191 ","pages":"Article 109359"},"PeriodicalIF":4.2,"publicationDate":"2025-02-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143388010","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-02-11DOI: 10.1016/j.mssp.2025.109374
Dawei Fang , Xican Li , Shengwei Chi , Jiaqi Dang , Xue An , Taiyu Jin , Jun Wang
In this investigation, we successfully fabricate a Z-scheme Cu|CuBi2O4/Bi/Bi2O3 photocatalyst film with Bi nanoparticles that exhibit enhanced surface plasmon resonance (SPR) via an incomplete solid-phase reaction. The photocatalyst film achieves the degradation of organic pollutants on one surface while simultaneously enabling hydrogen evolution on the other surface. This design effectively addresses the challenge of recycling powdered photocatalysts. The structure, composition, and properties of the films are analyzed. Techniques used include XRD, SEM, TEM, EDX, XPS, PL, TPR, and EIS. The study examines the impacts of various factors on the photocatalytic performance of the Z-scheme Cu|CuBi2O4/Bi/Bi2O3 photocatalyst films. These factors include different compositions, calcination time and temperature, and initial substance concentration. The experiment reveals that after the photocatalyst film is calcined at 500 °C for 2.0 h, the degradation rate of methylene blue (MB) through photocatalysis is determined to be 88.6 %. The amount of hydrogen evolution is determined to be 397.32 μmol/dm2. The presence of Bi nanoparticles in the Z-scheme Cu|CuBi2O4/Bi/Bi2O3 photocatalyst film contributes to efficient Z-scheme charge separation and an enhanced SPR effect. This leads to improved performance. Simultaneously, the potential mechanism of the Z-scheme Cu|CuBi2O4/Bi/Bi2O3 photocatalytic system is elucidated. The photocatalyst film provides significant guidance in controlling organic pollutants and facilitating large-scale hydrogen production.
{"title":"Construction of a novel surface plasmon resonance enhanced Z-scheme Cu|CuBi2O4/Bi/Bi2O3 photocatalyst film for effective organic pollutant degradation and simultaneous hydrogen evolution","authors":"Dawei Fang , Xican Li , Shengwei Chi , Jiaqi Dang , Xue An , Taiyu Jin , Jun Wang","doi":"10.1016/j.mssp.2025.109374","DOIUrl":"10.1016/j.mssp.2025.109374","url":null,"abstract":"<div><div>In this investigation, we successfully fabricate a Z-scheme Cu|CuBi<sub>2</sub>O<sub>4</sub>/Bi/Bi<sub>2</sub>O<sub>3</sub> photocatalyst film with Bi nanoparticles that exhibit enhanced surface plasmon resonance (SPR) via an incomplete solid-phase reaction. The photocatalyst film achieves the degradation of organic pollutants on one surface while simultaneously enabling hydrogen evolution on the other surface. This design effectively addresses the challenge of recycling powdered photocatalysts. The structure, composition, and properties of the films are analyzed. Techniques used include XRD, SEM, TEM, EDX, XPS, PL, TPR, and EIS. The study examines the impacts of various factors on the photocatalytic performance of the Z-scheme Cu|CuBi<sub>2</sub>O<sub>4</sub>/Bi/Bi<sub>2</sub>O<sub>3</sub> photocatalyst films. These factors include different compositions, calcination time and temperature, and initial substance concentration. The experiment reveals that after the photocatalyst film is calcined at 500 °C for 2.0 h, the degradation rate of methylene blue (MB) through photocatalysis is determined to be 88.6 %. The amount of hydrogen evolution is determined to be 397.32 μmol/dm<sup>2</sup>. The presence of Bi nanoparticles in the Z-scheme Cu|CuBi<sub>2</sub>O<sub>4</sub>/Bi/Bi<sub>2</sub>O<sub>3</sub> photocatalyst film contributes to efficient Z-scheme charge separation and an enhanced SPR effect. This leads to improved performance. Simultaneously, the potential mechanism of the Z-scheme Cu|CuBi<sub>2</sub>O<sub>4</sub>/Bi/Bi<sub>2</sub>O<sub>3</sub> photocatalytic system is elucidated. The photocatalyst film provides significant guidance in controlling organic pollutants and facilitating large-scale hydrogen production.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"191 ","pages":"Article 109374"},"PeriodicalIF":4.2,"publicationDate":"2025-02-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143388009","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A low-temperature device process is necessary for germanium (Ge) and germanium tin (GeSn)-based novel electronics/optics/spintronics/flexible device applications. Concerning insulating layer formation for gate stack and passivation layer, atomic layer deposition (ALD) has been widely studied and applied due to advantages, as exemplified by precise film thickness control and excellent step coverage. However, low-temperature ALD has not been applied to the abovementioned Ge(Sn)-based novel devices. In this study, we investigated Al₂O₃ deposition using low-temperature (∼90 °C) ALD (without sample heating) on Ge substrates and examined methods to enhance film quality and electrical properties. We found that direct low-temperature ALD on Ge led to dimple formation, which we attribute to uneven ALD growth caused by variations in surface hydrophilicity. To avoid this, we introduced a GeO₂ underlayer formed by electron cyclotron resonance (ECR) plasma before low-temperature ALD, successfully preventing dimples and improving surface uniformity. The resulting Al/Al₂O₃/GeO₂/Ge metal-oxide-semiconductor (MOS) capacitor demonstrated enhanced electrical characteristics. Additionally, a MOS field-effect transistor (FET) with gate stacks fabricated at a maximum gate stack process temperature of 130 °C exhibited typical operational behavior. This low-temperature ALD approach offers a promising pathway for low-temperature gate stack and passivation layer fabrication in emerging Ge(Sn)-based device applications.
{"title":"Al2O3 growth on Ge by low-temperature (∼90 °C) atomic layer deposition and its application for MOS devices","authors":"Taisei Aso , Hajime Kuwazuru , Dong Wang , Keisuke Yamamoto","doi":"10.1016/j.mssp.2025.109372","DOIUrl":"10.1016/j.mssp.2025.109372","url":null,"abstract":"<div><div>A low-temperature device process is necessary for germanium (Ge) and germanium tin (GeSn)-based novel electronics/optics/spintronics/flexible device applications. Concerning insulating layer formation for gate stack and passivation layer, atomic layer deposition (ALD) has been widely studied and applied due to advantages, as exemplified by precise film thickness control and excellent step coverage. However, low-temperature ALD has not been applied to the abovementioned Ge(Sn)-based novel devices. In this study, we investigated Al₂O₃ deposition using low-temperature (∼90 °C) ALD (without sample heating) on Ge substrates and examined methods to enhance film quality and electrical properties. We found that direct low-temperature ALD on Ge led to dimple formation, which we attribute to uneven ALD growth caused by variations in surface hydrophilicity. To avoid this, we introduced a GeO₂ underlayer formed by electron cyclotron resonance (ECR) plasma before low-temperature ALD, successfully preventing dimples and improving surface uniformity. The resulting Al/Al₂O₃/GeO₂/Ge metal-oxide-semiconductor (MOS) capacitor demonstrated enhanced electrical characteristics. Additionally, a MOS field-effect transistor (FET) with gate stacks fabricated at a maximum gate stack process temperature of 130 °C exhibited typical operational behavior. This low-temperature ALD approach offers a promising pathway for low-temperature gate stack and passivation layer fabrication in emerging Ge(Sn)-based device applications.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"190 ","pages":"Article 109372"},"PeriodicalIF":4.2,"publicationDate":"2025-02-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143376922","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-02-09DOI: 10.1016/j.mssp.2025.109376
Mohamed Morsy, Faycal Znid, Abdallah Farraj
This review article presents a thorough analysis of the present advancements and forthcoming trends within the integrated circuit (IC) industry, emphasizing its essential role in the fabric of modern technology across several key sectors, including consumer electronics, healthcare, and the automotive industry. As the sector moves beyond the 2 nm technology node, the paper investigates the obstacles to perpetuating Moore's Law, highlighting challenges such as quantum mechanical effects, the need for unprecedented manufacturing precision, and the limitations of existing materials. The review places special emphasis on the significance of cutting-edge innovations such as 3D integration, which layers circuits vertically to enhance connectivity and save space, and the exploration of alternative semiconductor materials like graphene and transition metal dichalcogenides (TMDs), which offer superior electrical, thermal, and mechanical properties. Additionally, it discusses the rise of emerging computing paradigms such as quantum circuits, which leverage the principles of quantum mechanics, and photonic circuits, which use light to achieve ultra-fast data processing speeds. The article also examines the economic and environmental impacts of advancing IC technology, underscoring the need for sustainable practices and new approaches to maintain progress. By addressing these key areas, this review underscores the transformative potential of next-generation IC technologies and their pivotal role in shaping the future of computing and electronics.
{"title":"A critical review on improving and moving beyond the 2 nm horizon: Future directions and impacts in next-generation integrated circuit technologies","authors":"Mohamed Morsy, Faycal Znid, Abdallah Farraj","doi":"10.1016/j.mssp.2025.109376","DOIUrl":"10.1016/j.mssp.2025.109376","url":null,"abstract":"<div><div>This review article presents a thorough analysis of the present advancements and forthcoming trends within the integrated circuit (IC) industry, emphasizing its essential role in the fabric of modern technology across several key sectors, including consumer electronics, healthcare, and the automotive industry. As the sector moves beyond the 2 nm technology node, the paper investigates the obstacles to perpetuating Moore's Law, highlighting challenges such as quantum mechanical effects, the need for unprecedented manufacturing precision, and the limitations of existing materials. The review places special emphasis on the significance of cutting-edge innovations such as 3D integration, which layers circuits vertically to enhance connectivity and save space, and the exploration of alternative semiconductor materials like graphene and transition metal dichalcogenides (TMDs), which offer superior electrical, thermal, and mechanical properties. Additionally, it discusses the rise of emerging computing paradigms such as quantum circuits, which leverage the principles of quantum mechanics, and photonic circuits, which use light to achieve ultra-fast data processing speeds. The article also examines the economic and environmental impacts of advancing IC technology, underscoring the need for sustainable practices and new approaches to maintain progress. By addressing these key areas, this review underscores the transformative potential of next-generation IC technologies and their pivotal role in shaping the future of computing and electronics.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"190 ","pages":"Article 109376"},"PeriodicalIF":4.2,"publicationDate":"2025-02-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143372953","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Given the significance of the visible-light-driven reduction of heavy metal chromium (Cr(VI)), it is promising and challenging to investigate photocatalysts that exhibit strong responsiveness to visible light and possess high carrier separation efficiency. In this research, a CaIn2S4/NiTiO3 Z-scheme heterojunction has been successfully constructed through the in-situ growth of CaIn2S4 nanosheets on NiTiO3 nanorods. The energy band alignment between CaIn2S4 and NiTiO3 in the hierarchical framework facilitated the formation of the heterojunction, which significantly enhanced visible light absorption, promoted the separation of photogenerated carriers, and maintained the high reducing capability of the CaIn2S4 conduction band electrons. These synergies enabled superior Cr(VI) removal efficiency. At an optimized CaIn2S4 to NiTiO3 ratio of 1:1, about 95 % removal rate of Cr(VI) was achieved within 80 min of visible-light exposure, accompanied by a reaction rate of 0.036 min−1 that is nearly four times faster than that over CaIn2S4. Furthermore, the charge transfer driving force and reaction mechanisms were comprehensively investigated by optoelectronic measurements, emphasizing the crucial roles of electrons (e−) in Cr(VI) reduction. This investigation showcases the potential of the CaIn2S4/NiTiO3 Z-scheme heterojunction for photocatalytic applications in Cr(VI)-containing wastewater treatment.
{"title":"Hierarchical CaIn2S4/NiTiO3 heterojunction enhanced removal of hexavalent chromium powered by visible irradiation","authors":"Yuanyuan Wang, Zhanlin Ma, Jian Wang, Jiaqi Ben, Hangmin Guan, Ping Gu, Yingfei Hu","doi":"10.1016/j.mssp.2025.109375","DOIUrl":"10.1016/j.mssp.2025.109375","url":null,"abstract":"<div><div>Given the significance of the visible-light-driven reduction of heavy metal chromium (Cr(VI)), it is promising and challenging to investigate photocatalysts that exhibit strong responsiveness to visible light and possess high carrier separation efficiency. In this research, a CaIn<sub>2</sub>S<sub>4</sub>/NiTiO<sub>3</sub> Z-scheme heterojunction has been successfully constructed through the in-situ growth of CaIn<sub>2</sub>S<sub>4</sub> nanosheets on NiTiO<sub>3</sub> nanorods. The energy band alignment between CaIn<sub>2</sub>S<sub>4</sub> and NiTiO<sub>3</sub> in the hierarchical framework facilitated the formation of the heterojunction, which significantly enhanced visible light absorption, promoted the separation of photogenerated carriers, and maintained the high reducing capability of the CaIn<sub>2</sub>S<sub>4</sub> conduction band electrons. These synergies enabled superior Cr(VI) removal efficiency. At an optimized CaIn<sub>2</sub>S<sub>4</sub> to NiTiO<sub>3</sub> ratio of 1:1, about 95 % removal rate of Cr(VI) was achieved within 80 min of visible-light exposure, accompanied by a reaction rate of 0.036 min<sup>−1</sup> that is nearly four times faster than that over CaIn<sub>2</sub>S<sub>4</sub>. Furthermore, the charge transfer driving force and reaction mechanisms were comprehensively investigated by optoelectronic measurements, emphasizing the crucial roles of electrons (e<sup>−</sup>) in Cr(VI) reduction. This investigation showcases the potential of the CaIn<sub>2</sub>S<sub>4</sub>/NiTiO<sub>3</sub> Z-scheme heterojunction for photocatalytic applications in Cr(VI)-containing wastewater treatment.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"190 ","pages":"Article 109375"},"PeriodicalIF":4.2,"publicationDate":"2025-02-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143372956","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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