Pub Date : 2026-01-12DOI: 10.1016/j.mssp.2026.110426
Yuhui Kang , Puqi Ning , Xiaoshuang Hui , Jiajun Yang , Xingjia Yang , Tianyu Zhao
This paper focuses on the design and development of a high-performance all-silicon carbide (SiC) power module with an H-bridge configuration. A compact packaging solution based on a four-layer stacked direct bonded copper (DBC) substrate is proposed. The module is rated at 1200 V/160 A and adopts a dual-phase H-bridge topology (Phase A and Phase B), with each bridge arm comprising three paralleled SiC MOSFET chips. Through the synergistic design of a stacked DBC layout and an integrated pin-fin microchannel heatsink substrate, the module achieves both reduced parasitic inductance and enhanced thermal dissipation capability. The electrical layout, thermal management strategy, and packaging process are elaborated in detail. Comprehensive simulations and experimental tests are conducted to systematically validate the module's performance. Results demonstrate excellent performance in key metrics such as static characteristics, dynamic switching losses, stray inductance, and thermal resistance. The module meets the demands for high power density and high reliability in high-voltage and high-power applications such as new energy vehicles and industrial converters.
{"title":"A DBC-stacked H-bridge SiC power module with optimized electro-thermal performance","authors":"Yuhui Kang , Puqi Ning , Xiaoshuang Hui , Jiajun Yang , Xingjia Yang , Tianyu Zhao","doi":"10.1016/j.mssp.2026.110426","DOIUrl":"10.1016/j.mssp.2026.110426","url":null,"abstract":"<div><div>This paper focuses on the design and development of a high-performance all-silicon carbide (SiC) power module with an H-bridge configuration. A compact packaging solution based on a four-layer stacked direct bonded copper (DBC) substrate is proposed. The module is rated at 1200 V/160 A and adopts a dual-phase H-bridge topology (Phase A and Phase B), with each bridge arm comprising three paralleled SiC MOSFET chips. Through the synergistic design of a stacked DBC layout and an integrated pin-fin microchannel heatsink substrate, the module achieves both reduced parasitic inductance and enhanced thermal dissipation capability. The electrical layout, thermal management strategy, and packaging process are elaborated in detail. Comprehensive simulations and experimental tests are conducted to systematically validate the module's performance. Results demonstrate excellent performance in key metrics such as static characteristics, dynamic switching losses, stray inductance, and thermal resistance. The module meets the demands for high power density and high reliability in high-voltage and high-power applications such as new energy vehicles and industrial converters.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"206 ","pages":"Article 110426"},"PeriodicalIF":4.6,"publicationDate":"2026-01-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145979471","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-01-11DOI: 10.1016/j.mssp.2026.110419
Linfeng Xie , Fei Wang , Zhe Dou , Jiaqi Liu , Kuan Luo , Yuyao Li
To address the unclear interaction effects of process parameters on the machining quality of silicon carbide (4H-SiC) blind holes during picosecond laser processing, this study conducted a process investigation and optimization using a picosecond laser system, combining single-factor experiments with response surface methodology (RSM). Through single-factor experiments, the effects of single-pulse energy, scanning speed, hatch spacing, and the number of scans on blind hole depth, over-etching groove depth, bottom surface roughness, and material removal rate (MRR) were systematically investigated. Based on the Box-Behnken design (BBD) method, multiple regression models were established, and the interaction effects of process parameters on the machining quality were analyzed in depth. The mean deviations between the predicted and experimental results for four regression models are all below 11 %. Through multi-objective optimization of process parameters using Response Surface Methodology, blind holes with a depth of 252.517 μm and bottom surface roughness of 0.261 μm were successfully fabricated. This research establishes both a theoretical foundation and methodological support for high-precision laser micromachining of 4H-SiC devices.
{"title":"Modeling and multi-objective optimization of picosecond laser machining of blind holes in 4H-SiC using response surface methodology","authors":"Linfeng Xie , Fei Wang , Zhe Dou , Jiaqi Liu , Kuan Luo , Yuyao Li","doi":"10.1016/j.mssp.2026.110419","DOIUrl":"10.1016/j.mssp.2026.110419","url":null,"abstract":"<div><div>To address the unclear interaction effects of process parameters on the machining quality of silicon carbide (4H-SiC) blind holes during picosecond laser processing, this study conducted a process investigation and optimization using a picosecond laser system, combining single-factor experiments with response surface methodology (RSM). Through single-factor experiments, the effects of single-pulse energy, scanning speed, hatch spacing, and the number of scans on blind hole depth, over-etching groove depth, bottom surface roughness, and material removal rate (MRR) were systematically investigated. Based on the Box-Behnken design (BBD) method, multiple regression models were established, and the interaction effects of process parameters on the machining quality were analyzed in depth. The mean deviations between the predicted and experimental results for four regression models are all below 11 %. Through multi-objective optimization of process parameters using Response Surface Methodology, blind holes with a depth of 252.517 μm and bottom surface roughness of 0.261 μm were successfully fabricated. This research establishes both a theoretical foundation and methodological support for high-precision laser micromachining of 4H-SiC devices.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"206 ","pages":"Article 110419"},"PeriodicalIF":4.6,"publicationDate":"2026-01-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145979475","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-01-10DOI: 10.1016/j.mssp.2026.110430
Xiaoxi Li , Xianyi Gou , Narong Chanlek , Keat Hoe Yeoh , Yee Hui Robin Chang , Min Kai Lee , Lieh-Jeng Chang , Boon Tong Goh
Balancing magnetism and conductivity remain a critical challenge in the development of nickel silicide nanowires for advanced spintronic and energy applications. Herein, phase-pure nickel silicide nanowires (NWs) were synthesized via chemical vapor deposition (CVD) through a nucleation-limited silicide reaction. The fabrication process involved the thermal evaporation of 220 ± 5 nm-thick Ni films onto c-Si (111) substrates, followed by annealing and H2 plasma treatment to form Ni nanoparticles. Subsequent silicidation was performed at 300–600 °C for 5 min using SiH4/H2 as the silicon source. The morphology, composition, crystal structure, and growth mechanism of the NWs were systematically characterized by FESEM, TEM, XRD, Raman, and XPS. Key magnetoelectric properties were optimized via precise temperature control: the highest remanent magnetization (Br = 2.6× 10−4 emu, 202.97 emu/cm3) was achieved at 380 °C, attributed to reduced grain boundary volume and a high aspect ratio of 800. The maximum saturation magnetization (Ms = 0.0027 emu, 1433.96 emu/cm3, measured at 300 K and 4 K under −60 kOe to 60 kOe) and an ultrahigh electrical conductivity (1.65 ± 0.29 × 106 Ω−1 cm−1) were concurrently obtained at 400 °C, enabled by high NW density (1.489 × 1010 NWs/cm2) and superior phase purity. Finally, the maximum coercivity (Ec = 0.27 kOe) was realized at 500 °C, benefiting from abundant Ni3Si nucleation sites and the mitigation of Si/SiOx-induced performance degradation. These results demonstrate that the magnetoelectric properties of Ni3Si2 NWs are structurally regulated by phase composition and substrate temperature, laying a robust foundation for their application in high-performance spintronics, magnetic sensing, and energy storage devices.
{"title":"Engineering morphology and crystalline structure of nickel silicide nanowires for tunable magnetism and conductivity","authors":"Xiaoxi Li , Xianyi Gou , Narong Chanlek , Keat Hoe Yeoh , Yee Hui Robin Chang , Min Kai Lee , Lieh-Jeng Chang , Boon Tong Goh","doi":"10.1016/j.mssp.2026.110430","DOIUrl":"10.1016/j.mssp.2026.110430","url":null,"abstract":"<div><div>Balancing magnetism and conductivity remain a critical challenge in the development of nickel silicide nanowires for advanced spintronic and energy applications. Herein, phase-pure nickel silicide nanowires (NWs) were synthesized via chemical vapor deposition (CVD) through a nucleation-limited silicide reaction. The fabrication process involved the thermal evaporation of 220 ± 5 nm-thick Ni films onto c-Si (111) substrates, followed by annealing and H<sub>2</sub> plasma treatment to form Ni nanoparticles. Subsequent silicidation was performed at 300–600 °C for 5 min using SiH<sub>4</sub>/H<sub>2</sub> as the silicon source. The morphology, composition, crystal structure, and growth mechanism of the NWs were systematically characterized by FESEM, TEM, XRD, Raman, and XPS. Key magnetoelectric properties were optimized via precise temperature control: the highest remanent magnetization (Br = 2.6× 10<sup>−4</sup> emu, 202.97 emu/cm<sup>3</sup>) was achieved at 380 °C, attributed to reduced grain boundary volume and a high aspect ratio of 800. The maximum saturation magnetization (Ms = 0.0027 emu, 1433.96 emu/cm<sup>3</sup>, measured at 300 K and 4 K under −60 kOe to 60 kOe) and an ultrahigh electrical conductivity (1.65 ± 0.29 × 10<sup>6</sup> Ω<sup>−1</sup> cm<sup>−1</sup>) were concurrently obtained at 400 °C, enabled by high NW density (1.489 × 10<sup>10</sup> NWs/cm<sup>2</sup>) and superior phase purity. Finally, the maximum coercivity (Ec = 0.27 kOe) was realized at 500 °C, benefiting from abundant Ni<sub>3</sub>Si nucleation sites and the mitigation of Si/SiO<sub>x</sub>-induced performance degradation. These results demonstrate that the magnetoelectric properties of Ni<sub>3</sub>Si<sub>2</sub> NWs are structurally regulated by phase composition and substrate temperature, laying a robust foundation for their application in high-performance spintronics, magnetic sensing, and energy storage devices.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"206 ","pages":"Article 110430"},"PeriodicalIF":4.6,"publicationDate":"2026-01-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145979526","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-01-10DOI: 10.1016/j.mssp.2026.110409
Hong-Seok Kim, Pil Hong Park, Sung-Pil Chang
Nickel oxide (NiO) nanofibers were fabricated through an electrospinning–calcination methods using a polyvinylpyrrolidone (PVP) solution containing nickel(II) nitrate as the spinning precursor. After calcination process, the fibers exhibited a porous and polycrystalline morphology with an average fiber diameter of 100 nm and primary grain size of 10 nm. To evaluate their gas sensing performances, the nanofibers were employed as the channel material of chemoresistive type sensor devices patterned with interdigital electrode (IDE) with an inter-electrode gap of 50 μm. The sensors were exposed to 0.1–10 ppm hydrogen sulfide (H2S). To maximize the sensing performance, silver nanoparticles were in situ incorporated by adding AgNO3 directly into the precursor solution, yielding Ag-decorated NiO nanofibers in a single step. Compared with pristine NiO nanofibers, the Ag-functionalized devices exhibited a six-fold enhancement in response: the resistance-based response (Rg/Ra) at 10 ppm H2S increased from 11.17 to 81.28, while the resexponse and recovery times were shortened by 55 s and 87 s, respectively. For comparison, Ag functionalization performed ex situ via sputtering and post-annealing afforded only a moderate response of 27.32 under the same conditions, underscoring the superiority of the one-step in situ approach that embeds Ag nanoparticles both inside and on the surface of the fibers. The Ag-decorated sensors also demonstrated robust humidity reliability (response >30 maintained at 80 % RH), excellent long-term stability within ±5 % variation over 30 days, and superior selectivity factors (2.96–16.86) against various interfering gases, confirming their practical suitability for H2S monitoring. These findings highlight a facile synthesis strategy and provide insight into the role of noble metal decoration in boosting the performance of NiO-based nanofiber gas sensors.
{"title":"Fabrication of a highly enhanced H2S gas sensor via infusion of Ag nanoparticles into the inner grain boundaries of NiO nanofibers","authors":"Hong-Seok Kim, Pil Hong Park, Sung-Pil Chang","doi":"10.1016/j.mssp.2026.110409","DOIUrl":"10.1016/j.mssp.2026.110409","url":null,"abstract":"<div><div>Nickel oxide (NiO) nanofibers were fabricated through an electrospinning–calcination methods using a polyvinylpyrrolidone (PVP) solution containing nickel(II) nitrate as the spinning precursor. After calcination process, the fibers exhibited a porous and polycrystalline morphology with an average fiber diameter of 100 nm and primary grain size of 10 nm. To evaluate their gas sensing performances, the nanofibers were employed as the channel material of chemoresistive type sensor devices patterned with interdigital electrode (IDE) with an inter-electrode gap of 50 μm. The sensors were exposed to 0.1–10 ppm hydrogen sulfide (H<sub>2</sub>S). To maximize the sensing performance, silver nanoparticles were in situ incorporated by adding AgNO<sub>3</sub> directly into the precursor solution, yielding Ag-decorated NiO nanofibers in a single step. Compared with pristine NiO nanofibers, the Ag-functionalized devices exhibited a six-fold enhancement in response: the resistance-based response (R<sub>g</sub>/R<sub>a</sub>) at 10 ppm H<sub>2</sub>S increased from 11.17 to 81.28, while the resexponse and recovery times were shortened by 55 s and 87 s, respectively. For comparison, Ag functionalization performed ex situ via sputtering and post-annealing afforded only a moderate response of 27.32 under the same conditions, underscoring the superiority of the one-step in situ approach that embeds Ag nanoparticles both inside and on the surface of the fibers. The Ag-decorated sensors also demonstrated robust humidity reliability (response >30 maintained at 80 % RH), excellent long-term stability within ±5 % variation over 30 days, and superior selectivity factors (2.96–16.86) against various interfering gases, confirming their practical suitability for H<sub>2</sub>S monitoring. These findings highlight a facile synthesis strategy and provide insight into the role of noble metal decoration in boosting the performance of NiO-based nanofiber gas sensors.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"206 ","pages":"Article 110409"},"PeriodicalIF":4.6,"publicationDate":"2026-01-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145979476","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-01-10DOI: 10.1016/j.mssp.2026.110429
Sownder Subramaniam , Maria Isabel Pintor Monroy , Dhirendra Pratap Singh , Thierry Conard , Hans Billington , Wenya Song , Francois Berghmans , Solomon Musibau , Abu Bakar Siddik , Azaharuddin Saleem Shaikh , Robert Gehlhaar , Tom Aernouts , Jef Poortmans , Yinghuan Kuang , Jan Genoe
Perovskite photodetectors (PePDs) represent a promising extension of perovskite solar cells (PSCs), sharing the device architecture but targeting distinct performance metrics. While PSCs prioritize high power conversion efficiency and operational stability, PePDs require low dark-current, high responsivity, detectivity, and fast response. These traits depend strongly on the transport layers, which govern interfacial recombination and carrier extraction dynamics. Tin-oxide (SnOx), widely employed as an electron transport layer in PSCs due to its transparency, energy-level alignment, and chemical stability, is an attractive candidate for PePDs. Traditionally, SnOx is deposited via atomic layer deposition, which offers excellent conformality and thickness control but suffers from high precursor and processing gas costs and low throughput thus limiting its scalability. In this work, we explore magnetron sputtering as a scalable alternative. However, conventional sputtering can damage underlying layers through ultraviolet radiation and high-energy particle bombardment. To address this, we developed a soft-sputtering protocol that enables SnOx deposition on inverted perovskite devices while preserving the integrity of the underlying layers. Devices fabricated with soft-sputtered SnOx exhibit a low-leakage current of 10−8 A cm−2 at −0.5 V, a detectivity of up to 1012 Jones, and fast response times of less than 2 μs for an active area of 0.125 cm2.
钙钛矿光电探测器（pepd）代表了钙钛矿太阳能电池（PSCs）的一个有前途的扩展，共享器件架构，但针对不同的性能指标。PSCs优先考虑高功率转换效率和工作稳定性，而pepd需要低暗电流、高响应性、探测性和快速响应。这些特性在很大程度上取决于传输层，传输层控制着界面重组和载流子提取动力学。氧化锡（SnOx）由于其透明性、能级排列性和化学稳定性而被广泛用作PSCs中的电子传输层，是极具吸引力的pedp候选材料。传统上，SnOx是通过原子层沉积的方式沉积的，这种方法具有良好的一致性和厚度控制，但前驱体和加工气体成本高，吞吐量低，因此限制了其可扩展性。在这项工作中，我们探索磁控溅射作为一种可扩展的替代方案。然而，传统的溅射会通过紫外线辐射和高能粒子轰击破坏底层。为了解决这个问题，我们开发了一种软溅射方案，使SnOx沉积在倒钙钛矿器件上，同时保持底层的完整性。用软溅射SnOx制成的器件在- 0.5 V时具有10−8 a cm−2的低泄漏电流，探测率高达1012 Jones，在0.125 cm2的有效面积下响应时间小于2 μs。
{"title":"Sputtered SnOx electron transport layer for inverted perovskite photodetectors – An alternative to atomic layer deposition","authors":"Sownder Subramaniam , Maria Isabel Pintor Monroy , Dhirendra Pratap Singh , Thierry Conard , Hans Billington , Wenya Song , Francois Berghmans , Solomon Musibau , Abu Bakar Siddik , Azaharuddin Saleem Shaikh , Robert Gehlhaar , Tom Aernouts , Jef Poortmans , Yinghuan Kuang , Jan Genoe","doi":"10.1016/j.mssp.2026.110429","DOIUrl":"10.1016/j.mssp.2026.110429","url":null,"abstract":"<div><div>Perovskite photodetectors (PePDs) represent a promising extension of perovskite solar cells (PSCs), sharing the device architecture but targeting distinct performance metrics. While PSCs prioritize high power conversion efficiency and operational stability, PePDs require low dark-current, high responsivity, detectivity, and fast response. These traits depend strongly on the transport layers, which govern interfacial recombination and carrier extraction dynamics. Tin-oxide (SnO<sub>x</sub>), widely employed as an electron transport layer in PSCs due to its transparency, energy-level alignment, and chemical stability, is an attractive candidate for PePDs. Traditionally, SnO<sub>x</sub> is deposited via atomic layer deposition, which offers excellent conformality and thickness control but suffers from high precursor and processing gas costs and low throughput thus limiting its scalability. In this work, we explore magnetron sputtering as a scalable alternative. However, conventional sputtering can damage underlying layers through ultraviolet radiation and high-energy particle bombardment. To address this, we developed a soft-sputtering protocol that enables SnO<sub>x</sub> deposition on inverted perovskite devices while preserving the integrity of the underlying layers. Devices fabricated with soft-sputtered SnO<sub>x</sub> exhibit a low-leakage current of 10<sup>−8</sup> A cm<sup>−2</sup> at −0.5 V, a detectivity of up to 10<sup>12</sup> Jones, and fast response times of less than 2 μs for an active area of 0.125 cm<sup>2</sup>.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"206 ","pages":"Article 110429"},"PeriodicalIF":4.6,"publicationDate":"2026-01-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145940880","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-01-09DOI: 10.1016/j.mssp.2026.110420
Qinlong Zhao, Wei Wei, Xiaojie Li, Jingcheng Liu
In this study, amino-functionalized core-shell silica abrasives for silicon wafer Chemical mechanical polishing (CMP) were synthesized via a UV-initiated thiol-ene click reaction. The structures of the abrasives were characterized using Scanning electron microscopy (SEM), Thermogravimetric analysis (TGA) and Fourier transform infrared spectroscopy (FTIR). The effect of abrasives with different acrylamide addition amounts on polishing was investigated. When the acrylamide addition was 50 %, the maximum polishing rate reached 0.33 μm/min, with a corresponding surface roughness of 0.34 nm. Subsequently, the effects of different pH values and polishing rate accelerators on polishing performance were explored. The results revealed the optimal polishing performance when using a slurry with a pH of 11 and a tetramethylammonium hydroxide (TMAH) concentration of 2 %, the maximum polishing rate reached 0.44 μm/min. Experimental results demonstrated that the prepared abrasives achieved high material removal rate and ultra-low surface roughness. X-ray photoelectron spectroscopy (XPS) analysis and density functional theory (DFT) calculations confirmed that amino modification enhanced the adsorption capacity of the abrasives on the silicon wafer surface, while the soft shell effectively reduced mechanical damage to the wafer surface.
{"title":"Preparation of amino-functionalized silica abrasives for chemical mechanical polishing based on Photoinitiated Polymerization","authors":"Qinlong Zhao, Wei Wei, Xiaojie Li, Jingcheng Liu","doi":"10.1016/j.mssp.2026.110420","DOIUrl":"10.1016/j.mssp.2026.110420","url":null,"abstract":"<div><div>In this study, amino-functionalized core-shell silica abrasives for silicon wafer Chemical mechanical polishing (CMP) were synthesized via a UV-initiated thiol-ene click reaction. The structures of the abrasives were characterized using Scanning electron microscopy (SEM), Thermogravimetric analysis (TGA) and Fourier transform infrared spectroscopy (FTIR). The effect of abrasives with different acrylamide addition amounts on polishing was investigated. When the acrylamide addition was 50 %, the maximum polishing rate reached 0.33 μm/min, with a corresponding surface roughness of 0.34 nm. Subsequently, the effects of different pH values and polishing rate accelerators on polishing performance were explored. The results revealed the optimal polishing performance when using a slurry with a pH of 11 and a tetramethylammonium hydroxide (TMAH) concentration of 2 %, the maximum polishing rate reached 0.44 μm/min. Experimental results demonstrated that the prepared abrasives achieved high material removal rate and ultra-low surface roughness. X-ray photoelectron spectroscopy (XPS) analysis and density functional theory (DFT) calculations confirmed that amino modification enhanced the adsorption capacity of the abrasives on the silicon wafer surface, while the soft shell effectively reduced mechanical damage to the wafer surface.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"206 ","pages":"Article 110420"},"PeriodicalIF":4.6,"publicationDate":"2026-01-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145940872","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-01-09DOI: 10.1016/j.mssp.2026.110408
Seungin Song , Taesu Choi , Youjin Reo, Yong-Young Noh
Transparent semiconductors are in demand for the development of flexible and large-area displays. Copper iodide is a promising p-type semiconductor with high optical transparency and electrical conductivity, where suitable zinc doping can effectively tune the carrier concentration for high-performance thin film transistors. This study proposes a CuI/Zn-doped CuI heterojunction structure for p-type metal halide TFTs. The industry-compatible vapor-deposited heterojunction structure composed of CuI/Zn-doped CuI TFTs offers effective hole transport and a reasonable off-state current through the low conductive Zn-doped CuI channel layer and efficient carrier supply from the highly conductive CuI upper layer. The optimized heterojunction p-type TFTs exhibited a linear field-effect mobility of ∼5 cm2 V−1 s−1 and on/off current ratio of ∼106. This novel heterojunction structure of metal halide TFTs offers a promising pathway for the development of next-generation transparent electronics and displays, incorporating possible vertical-stack integrations and complementary circuits with n-type metal oxide semiconductors.
{"title":"Vapor-deposited transparent copper iodide (CuI)/Zn-doped CuI heterojunction thin film transistors","authors":"Seungin Song , Taesu Choi , Youjin Reo, Yong-Young Noh","doi":"10.1016/j.mssp.2026.110408","DOIUrl":"10.1016/j.mssp.2026.110408","url":null,"abstract":"<div><div>Transparent semiconductors are in demand for the development of flexible and large-area displays. Copper iodide is a promising <em>p</em>-type semiconductor with high optical transparency and electrical conductivity, where suitable zinc doping can effectively tune the carrier concentration for high-performance thin film transistors. This study proposes a CuI/Zn-doped CuI heterojunction structure for <em>p</em>-type metal halide TFTs. The industry-compatible vapor-deposited heterojunction structure composed of CuI/Zn-doped CuI TFTs offers effective hole transport and a reasonable off-state current through the low conductive Zn-doped CuI channel layer and efficient carrier supply from the highly conductive CuI upper layer. The optimized heterojunction <em>p</em>-type TFTs exhibited a linear field-effect mobility of ∼5 cm<sup>2</sup> V<sup>−1</sup> s<sup>−1</sup> and on/off current ratio of ∼10<sup>6</sup>. This novel heterojunction structure of metal halide TFTs offers a promising pathway for the development of next-generation transparent electronics and displays, incorporating possible vertical-stack integrations and complementary circuits with <em>n</em>-type metal oxide semiconductors.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"206 ","pages":"Article 110408"},"PeriodicalIF":4.6,"publicationDate":"2026-01-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145940873","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-01-09DOI: 10.1016/j.mssp.2025.110401
Wei Liu, Shu Yang, Chunyan Yin, Guangbin Dou
The performance of out-of-plane (Z-axis) capacitive accelerometers represents a critical bottleneck constraining the overall accuracy of monolithically integrated triaxial MEMS, particularly in high-performance applications. This paper presents a comprehensive review of the micro-mechanical structures and performance enhancement strategies developed to overcome this limitation. We systematically deconstruct the two principal design archetypes: vertical displacement structures, whose evolution from simple straight beams to complex serpentine and double-layer symmetric configurations is charted, and torsional-pendulum structures, which leverage rotational mechanics for compact, sensitive devices. The review then synthesizes the core performance enhancement strategies, which are presented as a two-front endeavor: maximizing sensitivity and minimizing noise. Sensitivity enhancement is detailed as a synergistic optimization of mechanical response and electrical transduction. Noise suppression is likewise systematically addressed, with distinct strategies for mitigating mechanical–thermal noise at the physical source and circuit noise throughout the signal path. Highlighting a departure from conventional silicon-based fabrication, we also survey the transformative potential of emerging manufacturing processes — including PCB-based fabrication, LTCC, 3D printing, and WEDM — which offer new paradigms in materials, cost, and structural complexity. Finally, an outlook is provided, projecting a trajectory towards deep integration of materials and processes, intelligent on-chip systems, and application-driven specialization.
{"title":"A review of out-of-plane structural designs and performance enhancement strategies for MEMS Z-axis capacitive accelerometers","authors":"Wei Liu, Shu Yang, Chunyan Yin, Guangbin Dou","doi":"10.1016/j.mssp.2025.110401","DOIUrl":"10.1016/j.mssp.2025.110401","url":null,"abstract":"<div><div>The performance of out-of-plane (Z-axis) capacitive accelerometers represents a critical bottleneck constraining the overall accuracy of monolithically integrated triaxial MEMS, particularly in high-performance applications. This paper presents a comprehensive review of the micro-mechanical structures and performance enhancement strategies developed to overcome this limitation. We systematically deconstruct the two principal design archetypes: vertical displacement structures, whose evolution from simple straight beams to complex serpentine and double-layer symmetric configurations is charted, and torsional-pendulum structures, which leverage rotational mechanics for compact, sensitive devices. The review then synthesizes the core performance enhancement strategies, which are presented as a two-front endeavor: maximizing sensitivity and minimizing noise. Sensitivity enhancement is detailed as a synergistic optimization of mechanical response and electrical transduction. Noise suppression is likewise systematically addressed, with distinct strategies for mitigating mechanical–thermal noise at the physical source and circuit noise throughout the signal path. Highlighting a departure from conventional silicon-based fabrication, we also survey the transformative potential of emerging manufacturing processes — including PCB-based fabrication, LTCC, 3D printing, and <span><math><mi>μ</mi></math></span>WEDM — which offer new paradigms in materials, cost, and structural complexity. Finally, an outlook is provided, projecting a trajectory towards deep integration of materials and processes, intelligent on-chip systems, and application-driven specialization.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"206 ","pages":"Article 110401"},"PeriodicalIF":4.6,"publicationDate":"2026-01-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145940939","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-01-08DOI: 10.1016/j.mssp.2026.110410
Kai Du, Huafei Geng, Zhenjie Zhao, Xueyang Li, Gaojie Li
Developing high-performance hydrogen sensors is imperative for safe hydrogen utilization. PdPtMnCoNi high-entropy alloy (HEA) decorated Nb2O5 microspheres were synthesized via hydrothermal growth and liquid-phase reduction. Structural analyses confirmed uniform HEA nanoparticle dispersion (3–10 nm) on porous Nb2O5 microspheres, while XPS revealed enhanced surface oxygen adsorption and electron transfer at the HEA-Nb2O5 interface. The HEA/Nb2O5 sensor demonstrated exceptional hydrogen-sensing performance at 175 °C, achieving a rapid response time of 3 s–1000 ppm H2, a low detection limit (5 ppm), wide detection range (5–10000 ppm) and superior selectivity. The response of HEA/Nb2O5 sensor reached 28.5 % for 400 ppm H2, which is 35 times higher than that of the Nb2O5 (0.8 %). The introduction of HEA not only reduces the operating temperature of Nb2O5 sensor but also significantly enhances the response and selectivity to hydrogen. The improved sensing performance can be ascribed to the synergistic catalytic effects of HEA, which accelerate H2 dissociation and oxidation, and the formation of a Schottky barrier that modulates charge transport. This work highlights HEA decoration as a viable strategy for advancing oxide semiconductor-based gas sensors.
{"title":"PdPtMnCoNi high entropy alloy decorated Nb2O5 microspheres for rapid-response and high-selectivity hydrogen sensing","authors":"Kai Du, Huafei Geng, Zhenjie Zhao, Xueyang Li, Gaojie Li","doi":"10.1016/j.mssp.2026.110410","DOIUrl":"10.1016/j.mssp.2026.110410","url":null,"abstract":"<div><div>Developing high-performance hydrogen sensors is imperative for safe hydrogen utilization. PdPtMnCoNi high-entropy alloy (HEA) decorated Nb<sub>2</sub>O<sub>5</sub> microspheres were synthesized via hydrothermal growth and liquid-phase reduction. Structural analyses confirmed uniform HEA nanoparticle dispersion (3–10 nm) on porous Nb<sub>2</sub>O<sub>5</sub> microspheres, while XPS revealed enhanced surface oxygen adsorption and electron transfer at the HEA-Nb<sub>2</sub>O<sub>5</sub> interface. The HEA/Nb<sub>2</sub>O<sub>5</sub> sensor demonstrated exceptional hydrogen-sensing performance at 175 °C, achieving a rapid response time of 3 s–1000 ppm H<sub>2</sub>, a low detection limit (5 ppm), wide detection range (5–10000 ppm) and superior selectivity. The response of HEA/Nb<sub>2</sub>O<sub>5</sub> sensor reached 28.5 % for 400 ppm H<sub>2</sub>, which is 35 times higher than that of the Nb<sub>2</sub>O<sub>5</sub> (0.8 %). The introduction of HEA not only reduces the operating temperature of Nb<sub>2</sub>O<sub>5</sub> sensor but also significantly enhances the response and selectivity to hydrogen. The improved sensing performance can be ascribed to the synergistic catalytic effects of HEA, which accelerate H<sub>2</sub> dissociation and oxidation, and the formation of a Schottky barrier that modulates charge transport. This work highlights HEA decoration as a viable strategy for advancing oxide semiconductor-based gas sensors.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"206 ","pages":"Article 110410"},"PeriodicalIF":4.6,"publicationDate":"2026-01-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145940877","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This review article presents a detailed and critical analysis of plasma-assisted engineering of graphitic carbon nitride (g-C3N4) nanophotocatalysts, emphasizing how plasma material interactions modulate surface structure, electronic properties, and photocatalytic performance. By correlating the physical characteristics of different plasma types with their effects on g-C3N4, a comprehensive mechanistic framework is established, explaining how reactive species, defect engineering, and localized electric fields at the atomic scale govern photocatalytic activity. Plasma processes are highlighted as precise tools for engineering nitrogen and carbon defects in the tri-s-triazine framework of g-C3N4, enabling band structure tuning, introduction of mid-gap states, enhanced visible-light absorption, improved charge carrier separation, and increased surface active site density. Reactive species generate point defects, vacancies, and C–N dangling bonds that serve as electron traps and charge transfer centers, suppressing electron-hole recombination. Plasma treatment also maintains the integrity of the graphitic framework while promoting the formation of functional groups and facilitating electron transport. Concurrent ion bombardment and surface reactions induce partial exfoliation, porosity, and layer etching, substantially increasing specific surface area and active site density. Recent studies demonstrated that careful control of plasma energy, gas type, and irradiation duration allowed simultaneous hierarchical porosity and heteroatom doping, enhancing quantum efficiency and photocatalytic performance. Applications include emerging pollutant degradation and water splitting. The article also highlights future directions, such as temporal evolution of plasma-induced defects, multi-gas synergistic plasma, and in situ process monitoring, providing strategies for rational design of high-performance photocatalysts via nanoscale plasma matter interactions.
{"title":"A review on g-C3N4-based nanophotocatalysts modified via plasma technology: Influences on surface properties and photocatalytic performance","authors":"Hamed Moradi , Mohammad Haghighi , Gholamreza Foroutan , Maryam Shabani","doi":"10.1016/j.mssp.2025.110398","DOIUrl":"10.1016/j.mssp.2025.110398","url":null,"abstract":"<div><div>This review article presents a detailed and critical analysis of plasma-assisted engineering of graphitic carbon nitride (g-C<sub>3</sub>N<sub>4</sub>) nanophotocatalysts, emphasizing how plasma material interactions modulate surface structure, electronic properties, and photocatalytic performance. By correlating the physical characteristics of different plasma types with their effects on g-C<sub>3</sub>N<sub>4</sub>, a comprehensive mechanistic framework is established, explaining how reactive species, defect engineering, and localized electric fields at the atomic scale govern photocatalytic activity. Plasma processes are highlighted as precise tools for engineering nitrogen and carbon defects in the tri-s-triazine framework of g-C<sub>3</sub>N<sub>4</sub>, enabling band structure tuning, introduction of mid-gap states, enhanced visible-light absorption, improved charge carrier separation, and increased surface active site density. Reactive species generate point defects, vacancies, and C–N dangling bonds that serve as electron traps and charge transfer centers, suppressing electron-hole recombination. Plasma treatment also maintains the integrity of the graphitic framework while promoting the formation of functional groups and facilitating electron transport. Concurrent ion bombardment and surface reactions induce partial exfoliation, porosity, and layer etching, substantially increasing specific surface area and active site density. Recent studies demonstrated that careful control of plasma energy, gas type, and irradiation duration allowed simultaneous hierarchical porosity and heteroatom doping, enhancing quantum efficiency and photocatalytic performance. Applications include emerging pollutant degradation and water splitting. The article also highlights future directions, such as temporal evolution of plasma-induced defects, multi-gas synergistic plasma, and in situ process monitoring, providing strategies for rational design of high-performance photocatalysts via nanoscale plasma matter interactions.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"206 ","pages":"Article 110398"},"PeriodicalIF":4.6,"publicationDate":"2026-01-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145940938","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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