Materials Science in Semiconductor Processing最新文献_第4页

Research on the development and application of 400–2500 nm broadband transparent conductive ITO electrodes 400 - 2500nm宽带透明导电ITO电极的开发与应用研究

IF 4.6 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing

Pub Date : 2026-06-01 Epub Date: 2026-02-04 DOI: 10.1016/j.mssp.2026.110467

Shaojie Peng, Menglin Li, Yuxuan Du, Tao Ma, Shengyong Wang, Huan Liu

Indium tin oxide (ITO) is one of the most widely used transparent conducting oxides (TCOs) in optoelectronic devices. However, most studies and evaluation models focus only on the visible spectrum, while broadband (400–2500 nm) applications, such as quantum dot (QD) detectors and infrared photovoltaics, are limited by the low infrared transmittance of ITO. In this work, we propose a new figure of merit (FOM) suitable for broadband evaluation to overcome the limitations of the conventional Haacke model. Orthogonal experimental design was employed to systematically investigate the influence of sputtering power, time, and pressure on the broadband optical and electrical properties of ITO films. The optimized ITO electrode, fabricated entirely at room temperature, exhibited an average transmittance of 87.4 % and a sheet resistance of 49.8 Ω/sq across the 400–2500 nm range. Drude–Lorentz analysis revealed that the balance between free-carrier absorption and bound-state transitions at ∼1031 nm plays a critical role in the broadband response. To demonstrate practical applicability, the optimized ITO was integrated into a PbS QD detector, achieving an external quantum efficiency (EQE) of 47 % and a responsivity of 0.4 A/W at 1320 nm. These results highlight a practical route for developing broadband transparent electrodes compatible with thermally sensitive optoelectronic devices.

氧化铟锡（ITO）是光电器件中应用最广泛的透明导电氧化物之一。然而，大多数研究和评估模型只关注可见光谱，而宽带（400-2500 nm）应用，如量子点（QD）探测器和红外光伏，受到ITO低红外透过率的限制。在这项工作中，我们提出了一种新的适用于宽带评估的价值图（FOM），以克服传统哈克模型的局限性。采用正交实验设计，系统研究了溅射功率、溅射时间和溅射压力对ITO薄膜宽带光电性能的影响。优化后的ITO电极完全在室温下制备，在400-2500 nm范围内的平均透射率为87.4%，片电阻为49.8 Ω/sq。德鲁德-洛伦兹分析表明，自由载流子吸收和束缚态跃迁之间的平衡在~ 1031 nm处对宽带响应起着关键作用。为了证明其实用性，将优化后的ITO集成到PbS QD探测器中，在1320 nm处实现了47%的外量子效率（EQE）和0.4 a /W的响应率。这些结果为开发与热敏光电器件兼容的宽带透明电极提供了一条实用途径。

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引用次数: 0

Effects of metal diffusion on electrical performance and reliability of low dielectric constant materials under thermal stress 热应力下金属扩散对低介电常数材料电性能和可靠性的影响

IF 4.6 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing

Pub Date : 2026-06-01 Epub Date: 2026-02-01 DOI: 10.1016/j.mssp.2026.110477

Rajib Chowdhury, Thomas Poche, Seonhee Jang

This study investigated the impact of metal diffusion on the electrical performance and reliability of low dielectric constant (low-k) SiCOH thin films fabricated by plasma-enhanced chemical vapor deposition. The deposition plasma power substantially influenced the k value, with higher plasma power leading to an increased k value due to film densification and reduction in methyl groups. To evaluate the electrical performance and reliability of SiCOH films, metal-insulator-semiconductor (MIS) capacitors were fabricated using different metals of Al, Cu, Co, Mo, and W as metal gates. The SiCOH films were subjected to a thermal annealing process to apply thermal stress to the films. After annealing, the k value decreased due to structural changes in the films. Electrical characterization suggested that the annealing process elevated the leakage current in MIS capacitors, particularly for Cu-gate MIS capacitors, where a significant Cu diffusion into the SiCOH film degraded the film's dielectric properties. In contrast, the Co-gate MIS capacitors demonstrated better electrical stability in terms of leakage current and breakdown field. Understanding the role of metal diffusion using different metal gates is critical for optimizing the performance of the SiCOH thin films as an interlayer dielectric in advanced microelectronics.

本文研究了金属扩散对等离子体增强化学气相沉积制备低介电常数（low-k） SiCOH薄膜电性能和可靠性的影响。沉积等离子体功率对k值有很大影响，等离子体功率越高，由于薄膜致密化和甲基减少，k值越高。为了评估SiCOH薄膜的电性能和可靠性，采用Al、Cu、Co、Mo和W等不同金属作为金属栅极，制备了金属绝缘体半导体（MIS）电容器。对SiCOH薄膜进行热退火处理，使其产生热应力。退火后，由于薄膜结构的变化，k值降低。电学表征表明，退火过程提高了MIS电容器的漏电流，特别是Cu栅MIS电容器，其中Cu扩散到SiCOH薄膜中，降低了薄膜的介电性能。相比之下，共栅极MIS电容器在漏电流和击穿场方面表现出更好的电稳定性。了解不同金属栅极在金属扩散中的作用，对于优化SiCOH薄膜作为先进微电子层间介质的性能至关重要。

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引用次数: 0

Comparison of MAPbI3 thin-film fabrication for improved optoelectronic and thin-film triode performance MAPbI3薄膜制备对提高光电性能和薄膜三极管性能的比较

IF 4.6 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing

Pub Date : 2026-06-01 Epub Date: 2026-01-27 DOI: 10.1016/j.mssp.2026.110448

Tsai-Lun Chen , Thangaraji Vasudevan , Hariharan Rajasekaran, Lung-Chien Chen

This study presents a comprehensive investigation of methylammonium lead iodide (MAPbI₃) thin films fabricated via one-step and two-step methods, focusing on their structural, optical, and electronic characteristics for Thin-Film Triode (TFT) applications. Structural and optical analyses using UV–Vis, XRD, and SEM indicate that one-step films possess higher crystallinity, larger grains, and stronger light absorption, while two-step films exhibit smoother, denser morphologies with more uniform grains, reduced defect density, and markedly longer carrier lifetimes (34.5 ns vs. 14.1 ns), indicating suppressed nonradiative recombination. Electrical characterization of TFT devices with a 2 mm channel width reveals that the two-step films improved performance, including linear drain current-gate voltage characteristics, lower channel resistance, and a pronounced photo response with photocurrent exceeding the dark current by 50 %. Frequency response measurements further show stable square-wave tracking up to 5 MHz, a resonant behaviour near 20 MHz, and progressive signal attenuation above 40 MHz. These findings confirm that additive-free MAPbI₃ thin films, especially those obtained through the two-step method, show a moderate improvement in device performance.

本研究对采用一步法和两步法制备的碘化铅甲基铵（MAPbI3）薄膜进行了全面的研究，重点研究了其用于薄膜三极管（TFT）的结构、光学和电子特性。利用UV-Vis、XRD和SEM进行的结构和光学分析表明，一步法薄膜具有更高的结晶度、更大的晶粒和更强的光吸收，而两步法薄膜具有更光滑、更致密的形貌，晶粒更均匀，缺陷密度更低，载流子寿命明显更长（34.5 ns vs. 14.1 ns），表明非辐射复合受到抑制。通道宽度为2mm的TFT器件的电学特性表明，两步薄膜改善了性能，包括线性漏极电流-栅极电压特性，更低的通道电阻，以及光电流超过暗电流50%的明显光响应。频率响应测量进一步显示稳定的方波跟踪高达5兆赫，谐振行为接近20兆赫，和渐进信号衰减高于40兆赫。这些发现证实了无添加剂的MAPbI3薄膜，特别是通过两步法获得的薄膜，在器件性能方面表现出适度的改善。

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引用次数: 0

Atomistic simulation and experimental correlation analysis of metallization-dependent interfacial diffusion and shear failure in pressure-sintered Cu joints for SiC devices SiC器件压力烧结Cu接头金属化界面扩散与剪切破坏的原子模拟与实验关联分析

IF 4.6 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing

Pub Date : 2026-06-01 Epub Date: 2026-01-28 DOI: 10.1016/j.mssp.2026.110475

Xinghe Luan , Hengrui Li , Liguo Ding , Xuemin Li , Hongjie Zhang , Kewei Li , Longzao Zhou , Fengshun Wu

The reliability of Cu-based sintered interconnections is strongly governed by interfacial metallization, which controls atomic diffusion, microstructural evolution, and mechanical integrity. This study combines molecular dynamics (MD) simulations and experiments to clarify how chip and substrate metallization affect the sintering behavior and shear performance of Cu joints for silicon carbide (SiC) power devices. Four systems—Ag-Cu, Au-Cu, Ag-Ag, and Ag-Ni—were examined. MD results show that the Ag-Cu interface promotes stable face-centered cubic (FCC) formation, effective dislocation annihilation, and high shear resistance, whereas the Au-Cu and Ag-Ni interfaces exhibit stacking-fault buildup, amorphization, and premature failure. Experiments validate these trends: Ag-plated chips achieve 22.99 % lower porosity and 10.47 % higher connection rates than Au-plated chips, while Ag-plated substrates suffer voiding due to asymmetric Cu-Ag diffusion. Ni plating suppresses interdiffusion entirely, leading to bonding failure. Integrated analysis of densification, interfacial bonding, strength, and fracture behavior establishes the hierarchy bare Cu > Ag-plated > Ni-plated, identifying bare Cu substrates with Ag-plated chips as the most reliable configuration. These results provide mechanistic insight into metallization–diffusion coupling and practical guidance for designing robust interconnects in high-power electronic packaging.

cu基烧结互连的可靠性很大程度上取决于界面金属化，它控制着原子扩散、微观组织演变和机械完整性。本研究将分子动力学（MD）模拟和实验相结合，阐明芯片和衬底金属化如何影响碳化硅（SiC）功率器件中Cu接头的烧结行为和剪切性能。研究了ag - cu、Au-Cu、Ag-Ag和ag - ni四种体系。MD结果表明，Ag-Cu界面促进了稳定的面心立方（FCC）形成、有效的位错湮灭和高的抗剪切性，而Au-Cu和Ag-Ni界面则表现出堆积-错误积聚、非晶化和过早破坏。实验结果证实了这一趋势：镀银芯片的孔隙率比镀金芯片低22.99%，连接率比镀金芯片高10.47%，而镀银芯片由于Cu-Ag不对称扩散而产生空洞。镀镍完全抑制了相互扩散，导致键合失效。对致密化、界面结合、强度和断裂行为的综合分析建立了裸Cu >；镀ag >；镀ni的层次结构，确定了裸Cu衬底与镀ag芯片是最可靠的配置。这些结果为金属化-扩散耦合提供了机理见解，并为设计大功率电子封装中坚固的互连提供了实用指导。

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引用次数: 0

Recent advances in inorganic core/shell nanostructures for enhanced LED performance: A comprehensive review 无机核壳纳米结构增强LED性能的研究进展

IF 4.6 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing

Pub Date : 2026-06-01 Epub Date: 2026-01-28 DOI: 10.1016/j.mssp.2026.110459

Vaishnavi Bethur, S Venkataprasad Bhat

Incorporating nanoparticles into light-emitting diode (LED) technology can significantly enhance performance in several ways, including improving external quantum efficiency (EQE), color purity, and brightness. However, challenges such as efficiency losses and stability issues limit their practical application. In this regard, new strategies are required to passivate the surface of nanoparticles, thereby enhancing their stability and optical properties. Core/shell nanostructures play a crucial role in advancing LED technology by enhancing their light-emission characteristics. The choice of core and shell materials is critical, since each combination offers unique advantages. The selection of shell material is further determined by the specific requirements and desired performance of the LED device. Herein, we review the effect of the shell on various inorganic luminescent core nanomaterials in enhancing LED performance. Unlike previous reports focusing on specific material systems, this review considers different combinations of core/shell nanostructures, including chalcogenides, perovskites, and rare earth (RE)-based core nanomaterials, to overcome the critical challenges in LED technology, with insights into the future pathways to be explored.

将纳米颗粒结合到发光二极管（LED）技术中可以在几个方面显著提高性能，包括提高外部量子效率（EQE）、颜色纯度和亮度。然而，诸如效率损失和稳定性问题等挑战限制了它们的实际应用。在这方面，需要新的策略来钝化纳米颗粒的表面，从而提高其稳定性和光学性能。核/壳纳米结构通过提高其发光特性在LED技术的发展中起着至关重要的作用。芯和壳材料的选择至关重要，因为每种组合都具有独特的优势。外壳材料的选择进一步取决于LED器件的具体要求和期望的性能。在此，我们回顾了外壳在各种无机发光核心纳米材料上对提高LED性能的影响。与以往的报告不同，本综述考虑了核/壳纳米结构的不同组合，包括硫族化合物、钙钛矿和稀土（RE）基核心纳米材料，以克服LED技术中的关键挑战，并对未来的途径进行了探索。

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引用次数: 0

Shape-controlled embedded silver nanoparticles and nanopits in silicon substrates (100), (110), (111): A comparative study of potential SERS application 形状控制嵌入银纳米粒子和纳米粒子在硅衬底（100），（110），（111）：潜在的SERS应用的比较研究

IF 4.6 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing

Pub Date : 2026-06-01 Epub Date: 2026-01-29 DOI: 10.1016/j.mssp.2026.110462

Anna Ermina , Artem Larin , Nikolay Solodovchenko , Danila Markov , Darina Krasilina , Nadejda Belskaya , Kristina Prigoda , Vladimir Bolshakov , Yuliya Zharova

This study reports an efficient, simple, and cost-effective approach for synthesizing shape-controlled silver nanoparticles (AgNPs) embedded in the subsurface layer of single-crystal silicon (c-Si), as well as nanopits in c-Si. The synthesis is based on a galvanic displacement reaction in an aqueous AgNO

_{3}

:HF solution, followed by high-temperature annealing at 1100 °C in a pure water vapor for 180 min. The optical properties of the AgNPs embedded in c-Si were investigated by dark-field spectroscopy under p- and s-polarized illumination. The positions of the localized plasmon resonances were determined from the corresponding scattering spectra. The enhancement factors (EFs) of AgNPs and empty nanopits in silicon were evaluated using the finite element method as a function of their shape, period, and size, taking into account the dispersion of permittivity. AgNPs embedded in silicon exhibited numerical EFs of the order of

1 0^{7}

–

1 0^{9}

, while empty nanopits showed EFs of

1 0^{2}

–

1 0^{4}

. The functionality of these structures as surface-enhanced Raman scattering (SERS) substrates was investigated using an aqueous solution of the triphenylmethane brilliant green (BG) dye, a genotoxic and carcinogenic analyte. The limit of detection for BG concentration and the corresponding EFs were found to be 0.1

μ

M and

4.3 \times 1 0^{5}

for the initial Ag island film, 10 pM and

\sim 1 0^{7}

for AgNPs embedded in c-Si, and 1

μ

M and

\sim 1 0^{2}

for empty nanopits in c-Si, respectively. Thus, AgNPs embedded in silicon show high sensitivity, making them promising candidates for future sensing technologies.

本研究报告了一种高效、简单、经济的方法来合成嵌入在单晶硅（c-Si）亚表层的形状控制银纳米颗粒（AgNPs），以及c-Si中的纳米颗粒。该合成基于AgNO3:HF水溶液中的电位移反应，然后在1100℃的纯水蒸气中高温退火180分钟。在p和s偏光下，用暗场光谱研究了嵌入c-Si的AgNPs的光学性质。根据相应的散射光谱确定了局域等离子体共振的位置。在考虑介电常数色散的情况下，利用有限元方法评估了硅中AgNPs和空纳米粒子的增强因子（EFs）作为其形状、周期和尺寸的函数。嵌入在硅中的AgNPs表现出107-109数量级的电场效应，而空纳米粒子表现出102-104数量级的电场效应。这些结构的功能作为表面增强拉曼散射（SERS）底物的研究使用三苯基甲烷亮绿（BG）染料的水溶液，一种遗传毒性和致癌分析物。对于初始Ag岛膜，BG浓度的检测限为0.1 μM和4.3×105；对于c-Si中嵌入的AgNPs，检测限为10 μM和~ 107；对于c-Si中的空纳米粒子，检测限为1 μM和~ 102。因此，嵌入在硅中的AgNPs显示出高灵敏度，使其成为未来传感技术的有希望的候选者。

{"title":"Shape-controlled embedded silver nanoparticles and nanopits in silicon substrates (100), (110), (111): A comparative study of potential SERS application","authors":"Anna Ermina , Artem Larin , Nikolay Solodovchenko , Danila Markov , Darina Krasilina , Nadejda Belskaya , Kristina Prigoda , Vladimir Bolshakov , Yuliya Zharova","doi":"10.1016/j.mssp.2026.110462","DOIUrl":"10.1016/j.mssp.2026.110462","url":null,"abstract":"<div><div>This study reports an efficient, simple, and cost-effective approach for synthesizing shape-controlled silver nanoparticles (AgNPs) embedded in the subsurface layer of single-crystal silicon (c-Si), as well as nanopits in c-Si. The synthesis is based on a galvanic displacement reaction in an aqueous AgNO<span><math><msub><mrow></mrow><mrow><mn>3</mn></mrow></msub></math></span>:HF solution, followed by high-temperature annealing at 1100 °C in a pure water vapor for 180 min. The optical properties of the AgNPs embedded in c-Si were investigated by dark-field spectroscopy under p- and s-polarized illumination. The positions of the localized plasmon resonances were determined from the corresponding scattering spectra. The enhancement factors (EFs) of AgNPs and empty nanopits in silicon were evaluated using the finite element method as a function of their shape, period, and size, taking into account the dispersion of permittivity. AgNPs embedded in silicon exhibited numerical EFs of the order of <span><math><mrow><mn>1</mn><msup><mrow><mn>0</mn></mrow><mrow><mn>7</mn></mrow></msup></mrow></math></span>–<span><math><mrow><mn>1</mn><msup><mrow><mn>0</mn></mrow><mrow><mn>9</mn></mrow></msup></mrow></math></span>, while empty nanopits showed EFs of <span><math><mrow><mn>1</mn><msup><mrow><mn>0</mn></mrow><mrow><mn>2</mn></mrow></msup></mrow></math></span>–<span><math><mrow><mn>1</mn><msup><mrow><mn>0</mn></mrow><mrow><mn>4</mn></mrow></msup></mrow></math></span>. The functionality of these structures as surface-enhanced Raman scattering (SERS) substrates was investigated using an aqueous solution of the triphenylmethane brilliant green (BG) dye, a genotoxic and carcinogenic analyte. The limit of detection for BG concentration and the corresponding EFs were found to be 0.1 <span><math><mi>μ</mi></math></span>M and <span><math><mrow><mn>4</mn><mo>.</mo><mn>3</mn><mo>×</mo><mn>1</mn><msup><mrow><mn>0</mn></mrow><mrow><mn>5</mn></mrow></msup></mrow></math></span> for the initial Ag island film, 10 pM and <span><math><mrow><mo>∼</mo><mn>1</mn><msup><mrow><mn>0</mn></mrow><mrow><mn>7</mn></mrow></msup></mrow></math></span> for AgNPs embedded in c-Si, and 1 <span><math><mi>μ</mi></math></span>M and <span><math><mrow><mo>∼</mo><mn>1</mn><msup><mrow><mn>0</mn></mrow><mrow><mn>2</mn></mrow></msup></mrow></math></span> for empty nanopits in c-Si, respectively. Thus, AgNPs embedded in silicon show high sensitivity, making them promising candidates for future sensing technologies.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"207 ","pages":"Article 110462"},"PeriodicalIF":4.6,"publicationDate":"2026-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146081212","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

DMSO-tailored microstructure engineering of melt-extruded PFSIE membranes for efficient chlor-alkali electrolysis 用于高效氯碱电解的熔融挤出PFSIE膜的dmso定制微结构工程

IF 4.6 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing

Pub Date : 2026-06-01 Epub Date: 2026-02-06 DOI: 10.1016/j.mssp.2026.110472

Jianlong Lei , Libin Qian , Panpan Guan , Guixue Liang , Nan Wang , Yuan Li , Qipeng Guo

Perfluorosulfonic acid ion-exchange membranes (PFSIEMs) act as core components in chlor-alkali electrolysis, but the inadequate microstructure control of melt-extruded Na-type PFSIEMs remains a critical bottleneck restricting their performance. Herein, we propose a DMSO-assisted microstructure regulation strategy through direct melt-extrusion of perfluorosulfonyl fluoride precursors, which allows for precise modulation of membrane microstructures while notably boosting hydrolysis efficiency. Structural characterizations indicate that the optimized membranes feature reduced crystallinity, enhanced orderliness of ion channels with narrowed spacing, and an increased free volume fraction. These microstructural improvements result in remarkable performance enhancements, the parallel-to-draw and perpendicular-to-draw conductivities of the best-performing membrane are increased by 79.5% and 43.0% respectively, the NaCl permeability coefficient is improved by 223.7%, and the energy consumption for producing one ton of NaOH is reduced by 149.4 kWh/t compared to the pristine P-Na-0% membrane. This study provides a universal design framework for tailoring PFSIEMs to diverse application scenarios, where specific performance requirements can be precisely met through controlled microstructure modulation.

全氟磺酸离子交换膜（PFSIEMs）是氯碱电解的核心部件，但熔融挤压钠型PFSIEMs的微观结构控制不足仍然是制约其性能的关键瓶颈。在此，我们提出了一种dmso辅助的微观结构调节策略，通过直接熔融挤出全氟磺酰氟前体，可以精确调节膜的微观结构，同时显著提高水解效率。结构表征表明，优化后的膜具有结晶度降低、离子通道有序性增强、间距缩小、自由体积分数增加等特点。这些微观结构的改进带来了显著的性能提升，性能最佳的膜的平行拉伸电导率和垂直拉伸电导率分别提高了79.5%和43.0%，NaCl渗透系数提高了223.7%，生产1吨NaOH的能耗比原始P-Na-0%的膜降低了149.4 kWh/t。本研究提供了一个通用的设计框架，可以根据不同的应用场景定制pfsiem，通过可控的微观结构调制可以精确满足特定的性能要求。

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引用次数: 0

Defect engineering with group III dopants in 2D monolayer SiC for improved electronic devices 用于改进电子器件的二维单层SiC中III族掺杂的缺陷工程

IF 4.6 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing

Pub Date : 2026-06-01 Epub Date: 2026-02-09 DOI: 10.1016/j.mssp.2026.110465

Emmanuel Igumbor , Patience Ajeh , Edwin Mapasha , Ezekiel Omotoso , Abdulrafiu Raji

Point defects in 2D monolayer SiC have played important roles in enhancing its performance for high-power electronic applications. Despite the fact that several point defects in 2D monolayer SiC have been reported, the impact of group III dopants has not been well understood. In this study, we employed hybrid density functional theory to investigate group III dopants (B, Al, Ga, In, and Tl) in 2D monolayer SiC. The B

_{C}

is the most energetically favorable, whereas Tl

_{C}

is the least favorable. At low temperature, the B

_{C}

exhibits high concentration, and the B

_{Si}

exhibits negligible concentration. The Ga

_{Si}

shows relatively low concentrations at 250–300 K and technologically significant levels at high temperature. The Ga

_{C}

is increasingly relevant at high temperatures and the Tl

_{C}

and Tl

_{Si}

show vanishingly small concentrations up to

\sim 800

K, with only minor activation at high temperature. Group III dopants substituted at the C-sites generally induce mid-gap states, with their Fermi levels located near the middle of the band gap. In contrast, when substituted at the Si sites, these dopants do not induce mid-gap states. Instead, the dopant-induced states close to the Fermi level, leading to

p

-type behavior. Moreover, C-site substitution often induces local magnetic moments and breaks spin symmetry between the spin-up and spin-down states, whereas Si-site substitution result in symmetric, non-magnetic behavior. This study provides theoretical insights into the potential use of group III dopants in 2D monolayer SiC as a means to modify its electronic and magnetic properties for applications in nano- and microelectronic devices that can operate in high-temperature and harsh environments.

二维单层碳化硅的点缺陷在提高其高功率电子应用性能方面发挥着重要作用。尽管已经报道了二维单层碳化硅中的几个点缺陷，但III族掺杂剂的影响尚未得到很好的理解。在这项研究中，我们采用杂化密度泛函理论研究了二维单层SiC中的III族掺杂物（B, Al, Ga， In和Tl）。BC是最有利的能量，而TlC是最不利的。在低温下，BSi的浓度可以忽略不计。在250-300 K时，GaSi的浓度相对较低，在高温下，GaSi的浓度在技术上是显著的。GaC在高温下的相关性越来越强，TlC和TlSi在高达~ 800 K的温度下表现出消失的小浓度，在高温下只有轻微的活化。在c位取代的III族掺杂剂通常会产生中隙态，其费米能级位于带隙的中间附近。相反，当取代在Si位时，这些掺杂剂不会诱导中隙态。相反，掺杂剂诱导的状态接近费米能级，导致p型行为。此外，c位取代通常会引起局部磁矩，并打破自旋向上和自旋向下状态之间的自旋对称性，而si位取代则导致对称的非磁性行为。本研究为二维单层SiC中III族掺杂剂的潜在用途提供了理论见解，作为一种改变其电子和磁性能的手段，可用于在高温和恶劣环境中工作的纳米和微电子器件。

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引用次数: 0

Ultrafast laser micro-welding of glass to SiC: Microstructure, mechanical and impermeable properties 玻璃与碳化硅的超快激光微焊接：显微结构、力学和不渗透性能

IF 4.6 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing

Pub Date : 2026-06-01 Epub Date: 2026-02-02 DOI: 10.1016/j.mssp.2026.110473

Ming Wu , Jin Yang , Tao Zhang , Yixuan Zhao , Xiang Zhang , Qing Jiang , Jianian Tian , Meng Yang , Tao Zhang , Peng Li

Ultrafast laser micro-welding was used for the high-efficient and high-quality joining of aluminosilicate glass (AS) and SiC, whose reliable packaging was of importance in Micro-Electro-Mechanical Systems (MEMS). By using the orthogonal test method, the process parameters were optimized, which were single pulse energy of 30 μJ, scanning speed of 10 mm/s, and the scanning pattern of filling grid inside circle. Under these conditions, the joint achieved a maximum shear strength of 33.1 MPa. Microstructural analysis revealed an evident elemental mixture layer with a thickness of 1.4 μm at the interface, indicating strong material intermixing and elemental diffusion under ultrafast laser irradiation. In addition, the joint permeability was assessed by waterproofing evaluations, revealing that the joints exhibit outstanding impermeable properties, which met the IPX7 waterproof standard (immersion in 1 m of water for 30 min) for enclosure packaging in practical applications. Furthermore, the temperature field simulation results showed that the temperature generated by the laser irradiation during the welding process exceeded the softening temperature and melting point of the base material. The joint formation mechanism was also discussed. This work provides theoretical guidance for the ultrafast laser impermeability of transparent materials with SiC, holding significant potential in applications like semiconductor packaging and MEMS fabrication.

采用超快激光微焊接技术实现了硅铝玻璃（AS）与碳化硅（SiC）的高效、高质量连接，其可靠封装在微机电系统（MEMS）中具有重要意义。采用正交试验法，优化了单脉冲能量为30 μJ、扫描速度为10 mm/s、扫描方式为圆内填充网格的工艺参数。在此条件下，节理的最大抗剪强度为33.1 MPa。显微组织分析表明，在超快激光照射下，界面处形成了一层厚度为1.4 μm的元素混合层，表明材料之间存在强烈的混合和元素扩散。此外，通过防水评价对接缝的透气性进行了评估，结果表明接缝具有出色的抗渗性能，符合实际应用中外壳包装的IPX7防水标准（在1 m水中浸泡30 min）。此外，温度场模拟结果表明，焊接过程中激光照射产生的温度超过了基材的软化温度和熔点。并对接头形成机理进行了讨论。该研究为SiC透明材料的超快激光抗渗性能提供了理论指导，在半导体封装和MEMS制造等领域具有重要的应用潜力。

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引用次数: 0

2 kV normally-off recessed p-NiO gate GaN-based HEMTs fabricated using “buffer-free” AlGaN/GaN heterostructures on SiC substrates 在SiC衬底上采用“无缓冲”AlGaN/GaN异质结构制备的2kv常关凹槽p-NiO栅极GaN基hemt

IF 4.6 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing

Pub Date : 2026-05-01 Epub Date: 2026-01-05 DOI: 10.1016/j.mssp.2025.110385

Justyna Wierzbicka , Wojciech Hendzelek , Maciej Kamiński , Jarosław Tarenko , Joanna Jankowska-Śliwińska , Aleksandra Wójcicka , Oskar Sadowski , Aneta Gołębiowska , Krzysztof Urbanowski , Veronica Gao Zhan , Anna Szerling , Andrzej Taube

The usage of p-NiO-based gate architecture can be beneficial over conventionally used p-GaN gate structure in the construction of normally-off GaN-based high electron mobility transistors, due to simpler, cost-effective and low-thermal budget fabrication process flow. Here in this work we report normally-off recessed p-NiO gate GaN-based HEMTs fabricated on "buffer-free" AlGaN/GaN heterostructure on 4H-SiC substrate. By using 17 nm recess p-NiO gate structure, appropriate post-deposition annealing and passivation scheme high positive threshold +0.8V (+0.2 V), high drain output current over 0.7 A/mm and low subthreshold swing 80 mV/dec and on-state resistance 10 Ωmm were obtained simultaneously. Thanks to the use of a high-quality heterostructure on a semi-insulating substrate and the absence of substrate leakage current, normally-off devices with high breakdown voltage values of up to 2 kV for a gate-drain distance of 20 μm were achieved, which corresponds to an average breakdown field value of 1 MV/cm, without the use of additional field-plate termination structures.

基于p- nio的栅极结构比传统的p-GaN栅极结构更有利于构建基于gan的高电子迁移率晶体管，因为它更简单，成本效益和低热预算的制造工艺流程。在这项工作中，我们报道了在4H-SiC衬底上“无缓冲”AlGaN/GaN异质结构上制造的正常关闭的p-NiO栅极GaN基hemt。采用17 nm凹槽p-NiO栅极结构，采用适当的沉积后退火和钝化方案，同时获得高正阈值+0.8V (+0.2 V)，高漏极输出电流大于0.7 A/mm，低亚阈值摆幅80 mV/dec和导通电阻10 Ωmm。由于在半绝缘衬底上使用了高质量的异质结构，并且没有衬底泄漏电流，因此在栅极-漏极距离为20 μm的情况下，实现了具有高达2 kV的高击穿电压值的正常关闭器件，这相当于平均击穿场值为1 MV/cm，而无需使用额外的场板端接结构。

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