Pub Date : 2026-01-29DOI: 10.1016/j.mssp.2026.110462
Anna Ermina , Artem Larin , Nikolay Solodovchenko , Danila Markov , Darina Krasilina , Nadejda Belskaya , Kristina Prigoda , Vladimir Bolshakov , Yuliya Zharova
This study reports an efficient, simple, and cost-effective approach for synthesizing shape-controlled silver nanoparticles (AgNPs) embedded in the subsurface layer of single-crystal silicon (c-Si), as well as nanopits in c-Si. The synthesis is based on a galvanic displacement reaction in an aqueous AgNO:HF solution, followed by high-temperature annealing at 1100 °C in a pure water vapor for 180 min. The optical properties of the AgNPs embedded in c-Si were investigated by dark-field spectroscopy under p- and s-polarized illumination. The positions of the localized plasmon resonances were determined from the corresponding scattering spectra. The enhancement factors (EFs) of AgNPs and empty nanopits in silicon were evaluated using the finite element method as a function of their shape, period, and size, taking into account the dispersion of permittivity. AgNPs embedded in silicon exhibited numerical EFs of the order of –, while empty nanopits showed EFs of –. The functionality of these structures as surface-enhanced Raman scattering (SERS) substrates was investigated using an aqueous solution of the triphenylmethane brilliant green (BG) dye, a genotoxic and carcinogenic analyte. The limit of detection for BG concentration and the corresponding EFs were found to be 0.1 M and for the initial Ag island film, 10 pM and for AgNPs embedded in c-Si, and 1 M and for empty nanopits in c-Si, respectively. Thus, AgNPs embedded in silicon show high sensitivity, making them promising candidates for future sensing technologies.
{"title":"Shape-controlled embedded silver nanoparticles and nanopits in silicon substrates (100), (110), (111): A comparative study of potential SERS application","authors":"Anna Ermina , Artem Larin , Nikolay Solodovchenko , Danila Markov , Darina Krasilina , Nadejda Belskaya , Kristina Prigoda , Vladimir Bolshakov , Yuliya Zharova","doi":"10.1016/j.mssp.2026.110462","DOIUrl":"10.1016/j.mssp.2026.110462","url":null,"abstract":"<div><div>This study reports an efficient, simple, and cost-effective approach for synthesizing shape-controlled silver nanoparticles (AgNPs) embedded in the subsurface layer of single-crystal silicon (c-Si), as well as nanopits in c-Si. The synthesis is based on a galvanic displacement reaction in an aqueous AgNO<span><math><msub><mrow></mrow><mrow><mn>3</mn></mrow></msub></math></span>:HF solution, followed by high-temperature annealing at 1100 °C in a pure water vapor for 180 min. The optical properties of the AgNPs embedded in c-Si were investigated by dark-field spectroscopy under p- and s-polarized illumination. The positions of the localized plasmon resonances were determined from the corresponding scattering spectra. The enhancement factors (EFs) of AgNPs and empty nanopits in silicon were evaluated using the finite element method as a function of their shape, period, and size, taking into account the dispersion of permittivity. AgNPs embedded in silicon exhibited numerical EFs of the order of <span><math><mrow><mn>1</mn><msup><mrow><mn>0</mn></mrow><mrow><mn>7</mn></mrow></msup></mrow></math></span>–<span><math><mrow><mn>1</mn><msup><mrow><mn>0</mn></mrow><mrow><mn>9</mn></mrow></msup></mrow></math></span>, while empty nanopits showed EFs of <span><math><mrow><mn>1</mn><msup><mrow><mn>0</mn></mrow><mrow><mn>2</mn></mrow></msup></mrow></math></span>–<span><math><mrow><mn>1</mn><msup><mrow><mn>0</mn></mrow><mrow><mn>4</mn></mrow></msup></mrow></math></span>. The functionality of these structures as surface-enhanced Raman scattering (SERS) substrates was investigated using an aqueous solution of the triphenylmethane brilliant green (BG) dye, a genotoxic and carcinogenic analyte. The limit of detection for BG concentration and the corresponding EFs were found to be 0.1 <span><math><mi>μ</mi></math></span>M and <span><math><mrow><mn>4</mn><mo>.</mo><mn>3</mn><mo>×</mo><mn>1</mn><msup><mrow><mn>0</mn></mrow><mrow><mn>5</mn></mrow></msup></mrow></math></span> for the initial Ag island film, 10 pM and <span><math><mrow><mo>∼</mo><mn>1</mn><msup><mrow><mn>0</mn></mrow><mrow><mn>7</mn></mrow></msup></mrow></math></span> for AgNPs embedded in c-Si, and 1 <span><math><mi>μ</mi></math></span>M and <span><math><mrow><mo>∼</mo><mn>1</mn><msup><mrow><mn>0</mn></mrow><mrow><mn>2</mn></mrow></msup></mrow></math></span> for empty nanopits in c-Si, respectively. Thus, AgNPs embedded in silicon show high sensitivity, making them promising candidates for future sensing technologies.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"207 ","pages":"Article 110462"},"PeriodicalIF":4.6,"publicationDate":"2026-01-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146081212","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-01-28DOI: 10.1016/j.mssp.2026.110474
Sheng Bi , Dao-Hang Li , Can-Pu Wang , Zemin Bu , Yun-Hui Mei
This paper mainly proposes a power module life prediction method based on the “testing – modeling – simulation – prediction” framework. Firstly, a multi time sequence simulation method for soldering warpage deformation and residual stress in power modules has been established, which is based on the Anand viscoplastic constitutive model. This approach resolves issues of warpage assessment deviation and abnormal localization of maximum residual stress caused by inaccurate material parameters. Secondly, a technical system encompassing “finite element modeling – identification of weak regions – extraction of damage parameters – fatigue life prediction” has been developed for power modules, providing crucial technical support for reliability assessment of power modules. Thirdly, a non-contact strain measurement technique based on the Digital Image Correlation method has been developed, along with the concurrent establishment of a supporting experimental platform. This effectively addresses the systematic errors caused by backlash in traditional displacement-controlled fatigue testing, as well as the technical bottleneck of insufficient measurement accuracy associated with contact-type mechanical extensometers.
{"title":"Reliability design of power modules: multi time sequence simulation of soldering warpage deformation and fatigue life prediction of solder layers","authors":"Sheng Bi , Dao-Hang Li , Can-Pu Wang , Zemin Bu , Yun-Hui Mei","doi":"10.1016/j.mssp.2026.110474","DOIUrl":"10.1016/j.mssp.2026.110474","url":null,"abstract":"<div><div>This paper mainly proposes a power module life prediction method based on the “testing – modeling – simulation – prediction” framework. Firstly, a multi time sequence simulation method for soldering warpage deformation and residual stress in power modules has been established, which is based on the Anand viscoplastic constitutive model. This approach resolves issues of warpage assessment deviation and abnormal localization of maximum residual stress caused by inaccurate material parameters. Secondly, a technical system encompassing “finite element modeling – identification of weak regions – extraction of damage parameters – fatigue life prediction” has been developed for power modules, providing crucial technical support for reliability assessment of power modules. Thirdly, a non-contact strain measurement technique based on the Digital Image Correlation method has been developed, along with the concurrent establishment of a supporting experimental platform. This effectively addresses the systematic errors caused by backlash in traditional displacement-controlled fatigue testing, as well as the technical bottleneck of insufficient measurement accuracy associated with contact-type mechanical extensometers.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"207 ","pages":"Article 110474"},"PeriodicalIF":4.6,"publicationDate":"2026-01-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146081129","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-01-28DOI: 10.1016/j.mssp.2026.110464
Xiaoting Chen , Xiaoyu Wang , Long Zhang , Junying Song , Qingbin Guo , Dengzheng Gao , Li Wang , Xiaolong Hu
In this study, a novel S-scheme MoS2/g-C3N4/halloysite ternary photocatalyst was successfully synthesized by high-temperature calcination method and one-pot hydrothermal strategy for photocatalytic tetracycline (TC) degradation and H2 evolution under visible light irradiation. The result revealed that MoS2/g-C3N4/halloysite-70% exhibited significantly enhanced photocatalytic performance for TC degradation, with an efficiency of up to 91.6% within 180 min. The corresponding reaction rate constant was 0.00988 min−1, which was 2.74 and 3.87 times higher than that of pure MoS2 (0.0036 min−1) and g-C3N4 (0.00255 min−1), respectively. Meanwhile, under simulated visible light conditions, MoS2/g-C3N4/halloysite-70% exhibited the highest H2 production rate (494.2 μmol g−1 h−1), which was approximately 5.84 times and 2.83 times higher than that of g-C3N4 and MoS2, respectively. The unique S-scheme MoS2/g-C3N4 heterojunction structure and the introduction of halloysite support were responsible for the notable enhancement of photocatalytic activity, primarily by promoting the separation and migration of photogenerated charge carriers, improving the light response capacity and retaining the higher redox ability. Furthermore, the intermediates of TC photocatalyzed by MoS2/g-C3N4/halloysite were identified via LC-MS. This study provides a new strategy for efficient photocatalytic H2 production and wastewater treatment based on the combination of mineral carrier and S-scheme heterojunction.
{"title":"Construction of S-scheme MoS2/g-C3N4 heterojunction on halloysite nanotubes for effective photocatalytic tetracycline degradation and H2 production","authors":"Xiaoting Chen , Xiaoyu Wang , Long Zhang , Junying Song , Qingbin Guo , Dengzheng Gao , Li Wang , Xiaolong Hu","doi":"10.1016/j.mssp.2026.110464","DOIUrl":"10.1016/j.mssp.2026.110464","url":null,"abstract":"<div><div>In this study, a novel S-scheme MoS<sub>2</sub>/g-C<sub>3</sub>N<sub>4</sub>/halloysite ternary photocatalyst was successfully synthesized by high-temperature calcination method and one-pot hydrothermal strategy for photocatalytic tetracycline (TC) degradation and H<sub>2</sub> evolution under visible light irradiation. The result revealed that MoS<sub>2</sub>/g-C<sub>3</sub>N<sub>4</sub>/halloysite-70% exhibited significantly enhanced photocatalytic performance for TC degradation, with an efficiency of up to 91.6% within 180 min. The corresponding reaction rate constant was 0.00988 min<sup>−1</sup>, which was 2.74 and 3.87 times higher than that of pure MoS<sub>2</sub> (0.0036 min<sup>−1</sup>) and g-C<sub>3</sub>N<sub>4</sub> (0.00255 min<sup>−1</sup>), respectively. Meanwhile, under simulated visible light conditions, MoS<sub>2</sub>/g-C<sub>3</sub>N<sub>4</sub>/halloysite-70% exhibited the highest H<sub>2</sub> production rate (494.2 μmol g<sup>−1</sup> h<sup>−1</sup>), which was approximately 5.84 times and 2.83 times higher than that of g-C<sub>3</sub>N<sub>4</sub> and MoS<sub>2</sub>, respectively. The unique S-scheme MoS<sub>2</sub>/g-C<sub>3</sub>N<sub>4</sub> heterojunction structure and the introduction of halloysite support were responsible for the notable enhancement of photocatalytic activity, primarily by promoting the separation and migration of photogenerated charge carriers, improving the light response capacity and retaining the higher redox ability. Furthermore, the intermediates of TC photocatalyzed by MoS<sub>2</sub>/g-C<sub>3</sub>N<sub>4</sub>/halloysite were identified via LC-MS. This study provides a new strategy for efficient photocatalytic H<sub>2</sub> production and wastewater treatment based on the combination of mineral carrier and S-scheme heterojunction.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"207 ","pages":"Article 110464"},"PeriodicalIF":4.6,"publicationDate":"2026-01-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146081137","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-01-28DOI: 10.1016/j.mssp.2026.110466
Chi Wang , Tianxi Yang , Yijian Zhou , Jiawei Yuan , Chenglong Guo , Xiongtu Zhou , Jie Sun , Qun Yan
Because of their remarkable performance, Micro-LEDs have attracted a lot of attention in the display sector in recent years. This has driven the development of devices towards smaller sizes and higher pixel densities, but it has also introduced difficult fabrication problems. Standard flip-chip bonding technology poses very strict requirement the precise alignment of ultra-high pixel density Micro-LEDs to their driver substrates during the bonding, whereas typical wafer bonding techniques need high temperatures and pressures. In order to overcome these obstacles, we propose a novel method that uses a high-density metal micro-dot array with a spot size of 2 μm and a pitch of 4 μm to achieve alignment-free bonding under low-temperature and low-pressure conditions. This method enables the fabrication of Micro-LED devices with a pixel size of 6 μm and a pitch of 9 μm. According to experimental results, a 100 % bonding yield was achieved at 225 °C and 75 N, which are much lower than those reported by literature, respectively. The viability of low-temperature, low-pressure alignment-free bonding for the fabrication of ultra-high pixel-density Micro-LED devices has been effectively confirmed by this study.
{"title":"A metal micro-dot array-based alignment-free flip-chip bonding technique for Micro-LED display fabrication","authors":"Chi Wang , Tianxi Yang , Yijian Zhou , Jiawei Yuan , Chenglong Guo , Xiongtu Zhou , Jie Sun , Qun Yan","doi":"10.1016/j.mssp.2026.110466","DOIUrl":"10.1016/j.mssp.2026.110466","url":null,"abstract":"<div><div>Because of their remarkable performance, Micro-LEDs have attracted a lot of attention in the display sector in recent years. This has driven the development of devices towards smaller sizes and higher pixel densities, but it has also introduced difficult fabrication problems. Standard flip-chip bonding technology poses very strict requirement the precise alignment of ultra-high pixel density Micro-LEDs to their driver substrates during the bonding, whereas typical wafer bonding techniques need high temperatures and pressures. In order to overcome these obstacles, we propose a novel method that uses a high-density metal micro-dot array with a spot size of 2 μm and a pitch of 4 μm to achieve alignment-free bonding under low-temperature and low-pressure conditions. This method enables the fabrication of Micro-LED devices with a pixel size of 6 μm and a pitch of 9 μm. According to experimental results, a 100 % bonding yield was achieved at 225 °C and 75 N, which are much lower than those reported by literature, respectively. The viability of low-temperature, low-pressure alignment-free bonding for the fabrication of ultra-high pixel-density Micro-LED devices has been effectively confirmed by this study.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"207 ","pages":"Article 110466"},"PeriodicalIF":4.6,"publicationDate":"2026-01-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146081213","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-01-28DOI: 10.1016/j.mssp.2026.110432
Wanbin Hong , Qianming Lu , Hanyu Chen , Huikang Zhang , KunFeng Zhang
Graphite carbon-modified graphite nitride carbon (g-C3N4) exhibits potential application value in the degradation of antibiotic wastewater. In the study, a graphite carbon-modified g-C3N4 composite catalyst is synthesized by thermal condensation. The porous lamellar graphite carbon (SG) combines with g-C3N4, forming a composite material (SG-CN) with hierarchical structure. Under the condition of simulating visible light with Xenon lamp, the SG-CN can remove 92 % of sulfamethoxazole (SMX) in 120 min, displaying excellent sustainability and catalytic activity. Through a series of experiments and characterization, it has been proved that the enhanced photocatalytic performance arises from synergistic effects originating from the incorporation of activated graphite carbon. Its distinctive loose porous graphitized structure facilitates the formation of efficient charge transport pathways, thereby promoting electron transfer and shortening the migration distance of photogenerated electrons. In addition, the incorporation of carbon extends the response range of visible light. LC-MS identifies intermediate species and potential degradation routes of SMX. Quenching test indicates that •OH, h+ and •O2− radicals all participate in SMX degradation. Additionally, the photocatalyst shows broad-spectrum applicability to multiple sulfonamide antibiotics (degradation efficiencies >80 %), promoting universal applicability to sulfonamide-containing wastewater. These findings demonstrate that graphite modified g-C3N4 has good potential practical value in the antibiotic wastewater treatment.
{"title":"Preparation of graphite carbon modified g-C3N4 photocatalysts by stepwise activation method and study on degradation performance for sulfamethoxazole","authors":"Wanbin Hong , Qianming Lu , Hanyu Chen , Huikang Zhang , KunFeng Zhang","doi":"10.1016/j.mssp.2026.110432","DOIUrl":"10.1016/j.mssp.2026.110432","url":null,"abstract":"<div><div>Graphite carbon-modified graphite nitride carbon (g-C<sub>3</sub>N<sub>4</sub>) exhibits potential application value in the degradation of antibiotic wastewater. In the study, a graphite carbon-modified g-C<sub>3</sub>N<sub>4</sub> composite catalyst is synthesized by thermal condensation. The porous lamellar graphite carbon (SG) combines with g-C<sub>3</sub>N<sub>4</sub>, forming a composite material (SG-CN) with hierarchical structure. Under the condition of simulating visible light with Xenon lamp, the SG-CN can remove 92 % of sulfamethoxazole (SMX) in 120 min, displaying excellent sustainability and catalytic activity. Through a series of experiments and characterization, it has been proved that the enhanced photocatalytic performance arises from synergistic effects originating from the incorporation of activated graphite carbon. Its distinctive loose porous graphitized structure facilitates the formation of efficient charge transport pathways, thereby promoting electron transfer and shortening the migration distance of photogenerated electrons. In addition, the incorporation of carbon extends the response range of visible light. LC-MS identifies intermediate species and potential degradation routes of SMX. Quenching test indicates that •OH, h<sup>+</sup> and •O<sub>2</sub><sup>−</sup> radicals all participate in SMX degradation. Additionally, the photocatalyst shows broad-spectrum applicability to multiple sulfonamide antibiotics (degradation efficiencies >80 %), promoting universal applicability to sulfonamide-containing wastewater. These findings demonstrate that graphite modified g-C<sub>3</sub>N<sub>4</sub> has good potential practical value in the antibiotic wastewater treatment.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"207 ","pages":"Article 110432"},"PeriodicalIF":4.6,"publicationDate":"2026-01-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146081215","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-01-28DOI: 10.1016/j.mssp.2026.110475
Xinghe Luan , Hengrui Li , Liguo Ding , Xuemin Li , Hongjie Zhang , Kewei Li , Longzao Zhou , Fengshun Wu
The reliability of Cu-based sintered interconnections is strongly governed by interfacial metallization, which controls atomic diffusion, microstructural evolution, and mechanical integrity. This study combines molecular dynamics (MD) simulations and experiments to clarify how chip and substrate metallization affect the sintering behavior and shear performance of Cu joints for silicon carbide (SiC) power devices. Four systems—Ag-Cu, Au-Cu, Ag-Ag, and Ag-Ni—were examined. MD results show that the Ag-Cu interface promotes stable face-centered cubic (FCC) formation, effective dislocation annihilation, and high shear resistance, whereas the Au-Cu and Ag-Ni interfaces exhibit stacking-fault buildup, amorphization, and premature failure. Experiments validate these trends: Ag-plated chips achieve 22.99 % lower porosity and 10.47 % higher connection rates than Au-plated chips, while Ag-plated substrates suffer voiding due to asymmetric Cu-Ag diffusion. Ni plating suppresses interdiffusion entirely, leading to bonding failure. Integrated analysis of densification, interfacial bonding, strength, and fracture behavior establishes the hierarchy bare Cu > Ag-plated > Ni-plated, identifying bare Cu substrates with Ag-plated chips as the most reliable configuration. These results provide mechanistic insight into metallization–diffusion coupling and practical guidance for designing robust interconnects in high-power electronic packaging.
{"title":"Atomistic simulation and experimental correlation analysis of metallization-dependent interfacial diffusion and shear failure in pressure-sintered Cu joints for SiC devices","authors":"Xinghe Luan , Hengrui Li , Liguo Ding , Xuemin Li , Hongjie Zhang , Kewei Li , Longzao Zhou , Fengshun Wu","doi":"10.1016/j.mssp.2026.110475","DOIUrl":"10.1016/j.mssp.2026.110475","url":null,"abstract":"<div><div>The reliability of Cu-based sintered interconnections is strongly governed by interfacial metallization, which controls atomic diffusion, microstructural evolution, and mechanical integrity. This study combines molecular dynamics (MD) simulations and experiments to clarify how chip and substrate metallization affect the sintering behavior and shear performance of Cu joints for silicon carbide (SiC) power devices. Four systems—Ag-Cu, Au-Cu, Ag-Ag, and Ag-Ni—were examined. MD results show that the Ag-Cu interface promotes stable face-centered cubic (FCC) formation, effective dislocation annihilation, and high shear resistance, whereas the Au-Cu and Ag-Ni interfaces exhibit stacking-fault buildup, amorphization, and premature failure. Experiments validate these trends: Ag-plated chips achieve 22.99 % lower porosity and 10.47 % higher connection rates than Au-plated chips, while Ag-plated substrates suffer voiding due to asymmetric Cu-Ag diffusion. Ni plating suppresses interdiffusion entirely, leading to bonding failure. Integrated analysis of densification, interfacial bonding, strength, and fracture behavior establishes the hierarchy bare Cu > Ag-plated > Ni-plated, identifying bare Cu substrates with Ag-plated chips as the most reliable configuration. These results provide mechanistic insight into metallization–diffusion coupling and practical guidance for designing robust interconnects in high-power electronic packaging.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"207 ","pages":"Article 110475"},"PeriodicalIF":4.6,"publicationDate":"2026-01-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146081135","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-01-28DOI: 10.1016/j.mssp.2026.110459
Vaishnavi Bethur, S Venkataprasad Bhat
Incorporating nanoparticles into light-emitting diode (LED) technology can significantly enhance performance in several ways, including improving external quantum efficiency (EQE), color purity, and brightness. However, challenges such as efficiency losses and stability issues limit their practical application. In this regard, new strategies are required to passivate the surface of nanoparticles, thereby enhancing their stability and optical properties. Core/shell nanostructures play a crucial role in advancing LED technology by enhancing their light-emission characteristics. The choice of core and shell materials is critical, since each combination offers unique advantages. The selection of shell material is further determined by the specific requirements and desired performance of the LED device. Herein, we review the effect of the shell on various inorganic luminescent core nanomaterials in enhancing LED performance. Unlike previous reports focusing on specific material systems, this review considers different combinations of core/shell nanostructures, including chalcogenides, perovskites, and rare earth (RE)-based core nanomaterials, to overcome the critical challenges in LED technology, with insights into the future pathways to be explored.
{"title":"Recent advances in inorganic core/shell nanostructures for enhanced LED performance: A comprehensive review","authors":"Vaishnavi Bethur, S Venkataprasad Bhat","doi":"10.1016/j.mssp.2026.110459","DOIUrl":"10.1016/j.mssp.2026.110459","url":null,"abstract":"<div><div>Incorporating nanoparticles into light-emitting diode (LED) technology can significantly enhance performance in several ways, including improving external quantum efficiency (EQE), color purity, and brightness. However, challenges such as efficiency losses and stability issues limit their practical application. In this regard, new strategies are required to passivate the surface of nanoparticles, thereby enhancing their stability and optical properties. Core/shell nanostructures play a crucial role in advancing LED technology by enhancing their light-emission characteristics. The choice of core and shell materials is critical, since each combination offers unique advantages. The selection of shell material is further determined by the specific requirements and desired performance of the LED device. Herein, we review the effect of the shell on various inorganic luminescent core nanomaterials in enhancing LED performance. Unlike previous reports focusing on specific material systems, this review considers different combinations of core/shell nanostructures, including chalcogenides, perovskites, and rare earth (RE)-based core nanomaterials, to overcome the critical challenges in LED technology, with insights into the future pathways to be explored.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"207 ","pages":"Article 110459"},"PeriodicalIF":4.6,"publicationDate":"2026-01-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146081214","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-01-27DOI: 10.1016/j.mssp.2026.110455
Muhammad Faraz , Gul Rahman , Imran Shakir
First-principles calculations combined with the Boltzmann transport equation are carried out to study the electronic structures and thermoelectric properties of few-layer SnSe and Janus SnSeS. Both SnSe and SnSeS reveal that the band gap decreases as the thickness of SnSe increases. The band gap of Janus SnSeS is large as compared to that of SnSe systems. Power factor (PF) and zT show maximum values around 0.5 eV chemical potential and both PF and zT increase with temperature and layer thickness. The highest values of PF and zT are W/mK2 and 1.51 ,which are achieved at 800 K for six layers of SnSe. Monolayer SnSe exhibits efficient thermoelectric performance at low carrier concentrations, whereas multilayer SnSe shows better performance at higher carrier concentrations. As the layer thickness is increased, enhanced thermoelectric performance is observed for -type doping in SnSe, whereas -type doping also leads to more efficient thermoelectric behavior in Janus SnSeS systems. Furthermore, monolayer SnSe shows a larger PF and zT along the armchair direction compared to the zigzag direction. -type Janus monolayer SnSeS exhibits a higher zT when measured along armchair direction as compared with zigzag direction. Hexa-layered janus SnSeS has larger zT ()along zigzag direction when doped with electrons at high temperature . We believe that -type doping in SnSe and Janus SnSeS is essential for better thermoelectric performance.
{"title":"Layer dependent thermoelectric properties of two dimensional SnSe and Janus SnSeS Monolayers: First-principles calculations","authors":"Muhammad Faraz , Gul Rahman , Imran Shakir","doi":"10.1016/j.mssp.2026.110455","DOIUrl":"10.1016/j.mssp.2026.110455","url":null,"abstract":"<div><div>First-principles calculations combined with the Boltzmann transport equation are carried out to study the electronic structures and thermoelectric properties of few-layer SnSe and Janus SnSeS. Both SnSe and SnSeS reveal that the band gap decreases as the thickness of SnSe increases. The band gap of Janus SnSeS is large as compared to that of SnSe systems. Power factor (PF) and zT show maximum values around 0.5 eV chemical potential and both PF and zT increase with temperature and layer thickness. The highest values of PF and zT are <span><math><mrow><mn>33</mn><mo>.</mo><mn>96</mn><mo>×</mo><mn>1</mn><msup><mrow><mn>0</mn></mrow><mrow><mo>−</mo><mn>4</mn></mrow></msup></mrow></math></span> W/mK<sup>2</sup> and 1.51 ,which are achieved at 800 K for six layers of SnSe. Monolayer SnSe exhibits efficient thermoelectric performance at low carrier concentrations, whereas multilayer SnSe shows better performance at higher carrier concentrations. As the layer thickness is increased, enhanced thermoelectric performance is observed for <span><math><mi>n</mi></math></span>-type doping in SnSe, whereas <span><math><mi>n</mi></math></span>-type doping also leads to more efficient thermoelectric behavior in Janus SnSeS systems. Furthermore, monolayer SnSe shows a larger PF and zT along the armchair direction compared to the zigzag direction. <span><math><mi>p</mi></math></span>-type Janus monolayer SnSeS exhibits a higher zT when measured along armchair direction as compared with zigzag direction. Hexa-layered janus SnSeS has larger zT (<span><math><mrow><mo>></mo><mn>1</mn></mrow></math></span>)along zigzag direction when doped with electrons at high temperature . We believe that <span><math><mi>n</mi></math></span>-type doping in SnSe and Janus SnSeS is essential for better thermoelectric performance.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"207 ","pages":"Article 110455"},"PeriodicalIF":4.6,"publicationDate":"2026-01-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146045278","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This study presents a comprehensive investigation of methylammonium lead iodide (MAPbI3) thin films fabricated via one-step and two-step methods, focusing on their structural, optical, and electronic characteristics for Thin-Film Triode (TFT) applications. Structural and optical analyses using UV–Vis, XRD, and SEM indicate that one-step films possess higher crystallinity, larger grains, and stronger light absorption, while two-step films exhibit smoother, denser morphologies with more uniform grains, reduced defect density, and markedly longer carrier lifetimes (34.5 ns vs. 14.1 ns), indicating suppressed nonradiative recombination. Electrical characterization of TFT devices with a 2 mm channel width reveals that the two-step films improved performance, including linear drain current-gate voltage characteristics, lower channel resistance, and a pronounced photo response with photocurrent exceeding the dark current by 50 %. Frequency response measurements further show stable square-wave tracking up to 5 MHz, a resonant behaviour near 20 MHz, and progressive signal attenuation above 40 MHz. These findings confirm that additive-free MAPbI3 thin films, especially those obtained through the two-step method, show a moderate improvement in device performance.
本研究对采用一步法和两步法制备的碘化铅甲基铵（MAPbI3）薄膜进行了全面的研究，重点研究了其用于薄膜三极管（TFT）的结构、光学和电子特性。利用UV-Vis、XRD和SEM进行的结构和光学分析表明，一步法薄膜具有更高的结晶度、更大的晶粒和更强的光吸收，而两步法薄膜具有更光滑、更致密的形貌，晶粒更均匀，缺陷密度更低，载流子寿命明显更长（34.5 ns vs. 14.1 ns），表明非辐射复合受到抑制。通道宽度为2mm的TFT器件的电学特性表明，两步薄膜改善了性能，包括线性漏极电流-栅极电压特性，更低的通道电阻，以及光电流超过暗电流50%的明显光响应。频率响应测量进一步显示稳定的方波跟踪高达5兆赫，谐振行为接近20兆赫，和渐进信号衰减高于40兆赫。这些发现证实了无添加剂的MAPbI3薄膜，特别是通过两步法获得的薄膜，在器件性能方面表现出适度的改善。
{"title":"Comparison of MAPbI3 thin-film fabrication for improved optoelectronic and thin-film triode performance","authors":"Tsai-Lun Chen , Thangaraji Vasudevan , Hariharan Rajasekaran, Lung-Chien Chen","doi":"10.1016/j.mssp.2026.110448","DOIUrl":"10.1016/j.mssp.2026.110448","url":null,"abstract":"<div><div>This study presents a comprehensive investigation of methylammonium lead iodide (MAPbI<sub>3</sub>) thin films fabricated via one-step and two-step methods, focusing on their structural, optical, and electronic characteristics for Thin-Film Triode (TFT) applications. Structural and optical analyses using UV–Vis, XRD, and SEM indicate that one-step films possess higher crystallinity, larger grains, and stronger light absorption, while two-step films exhibit smoother, denser morphologies with more uniform grains, reduced defect density, and markedly longer carrier lifetimes (34.5 ns vs. 14.1 ns), indicating suppressed nonradiative recombination. Electrical characterization of TFT devices with a 2 mm channel width reveals that the two-step films improved performance, including linear drain current-gate voltage characteristics, lower channel resistance, and a pronounced photo response with photocurrent exceeding the dark current by 50 %. Frequency response measurements further show stable square-wave tracking up to 5 MHz, a resonant behaviour near 20 MHz, and progressive signal attenuation above 40 MHz. These findings confirm that additive-free MAPbI<sub>3</sub> thin films, especially those obtained through the two-step method, show a moderate improvement in device performance.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"207 ","pages":"Article 110448"},"PeriodicalIF":4.6,"publicationDate":"2026-01-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146081131","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-01-24DOI: 10.1016/j.mssp.2026.110460
Zuxun Zhang, Lin Tao, Xin Quan, Mingyang Gu, Han Zhang, Baigang An, Lixiang Li
The selective detection of hydrogen (H2) in complex gas environments is essential for hydrogen safety monitoring, yet remains challenging for pristine MoS2-based sensors. Herein, density functional theory (DFT) was employed to explore four single-layer MoS2 systems co-doped with either Sc or Ti (metal site) and B or N (non-metal site), namely Sc@B-MoS2, Sc@N-MoS2, Ti@B-MoS2, and Ti@N-MoS2. Formation energy analysis (−3.34 to −3.01 eV) confirmed their structural stability. Adsorption energy results reveal that Sc@N-MoS2 (−0.35 eV) and Ti@N-MoS2 (−0.31 eV) exhibit the most favorable H2 binding, markedly outperforming single-atom doping. The d-band center analysis and density of states (DOS) calculations show that N-site modification enhances orbital overlap with H2, preserving high H2 selectivity even in the presence of CO and H2O. The Crystal Orbital Hamilton Population (COHP) analysis indicates that bonding states below the Fermi level dominate during adsorption, enabling strong gas-surface interactions. Gibbs free energy calculations suggest robust thermal stability up to 500 K, while diffusion barriers of 3.46–3.86 kJ/mol indicate the high mobility of adsorbed molecules, contributing to rapid sensor response kinetics. By calculating the electrical response and recovery time, we demonstrated that this material exhibits a shorter recovery time and high electrical responsiveness. Overall, Sc@N-MoS2 demonstrated superior sensing performance, providing mechanistic insights and design principles for synergistically co-doped MoS2 sensors with high H2 selectivity under realistic conditions.
{"title":"Regulating the H2 selectivity of MoS2 sensors through synergistic metal–non-metal co-doping","authors":"Zuxun Zhang, Lin Tao, Xin Quan, Mingyang Gu, Han Zhang, Baigang An, Lixiang Li","doi":"10.1016/j.mssp.2026.110460","DOIUrl":"10.1016/j.mssp.2026.110460","url":null,"abstract":"<div><div>The selective detection of hydrogen (H<sub>2</sub>) in complex gas environments is essential for hydrogen safety monitoring, yet remains challenging for pristine MoS<sub>2</sub>-based sensors. Herein, density functional theory (DFT) was employed to explore four single-layer MoS<sub>2</sub> systems co-doped with either Sc or Ti (metal site) and B or N (non-metal site), namely Sc@B-MoS<sub>2</sub>, Sc@N-MoS<sub>2</sub>, Ti@B-MoS<sub>2</sub>, and Ti@N-MoS<sub>2</sub>. Formation energy analysis (−3.34 to −3.01 eV) confirmed their structural stability. Adsorption energy results reveal that Sc@N-MoS<sub>2</sub> (−0.35 eV) and Ti@N-MoS<sub>2</sub> (−0.31 eV) exhibit the most favorable H<sub>2</sub> binding, markedly outperforming single-atom doping. The d-band center analysis and density of states (DOS) calculations show that N-site modification enhances orbital overlap with H<sub>2</sub>, preserving high H<sub>2</sub> selectivity even in the presence of CO and H<sub>2</sub>O. The Crystal Orbital Hamilton Population (COHP) analysis indicates that bonding states below the Fermi level dominate during adsorption, enabling strong gas-surface interactions. Gibbs free energy calculations suggest robust thermal stability up to 500 K, while diffusion barriers of 3.46–3.86 kJ/mol indicate the high mobility of adsorbed molecules, contributing to rapid sensor response kinetics. By calculating the electrical response and recovery time, we demonstrated that this material exhibits a shorter recovery time and high electrical responsiveness. Overall, Sc@N-MoS<sub>2</sub> demonstrated superior sensing performance, providing mechanistic insights and design principles for synergistically co-doped MoS<sub>2</sub> sensors with high H<sub>2</sub> selectivity under realistic conditions.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"206 ","pages":"Article 110460"},"PeriodicalIF":4.6,"publicationDate":"2026-01-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146035058","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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