Materials Science in Semiconductor Processing最新文献_第7页

Tuning phase purity, magnetic softness, and microwave absorption in Co0.75Ni0.25Ti0.975Y0.025O3 via controlled milling and sintering 通过控制铣削和烧结调整Co0.75Ni0.25Ti0.975Y0.025O3的相纯度、磁性柔软度和微波吸收

IF 4.6 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing

Pub Date : 2026-01-06 DOI: 10.1016/j.mssp.2025.110390

Tesalonika Siregar , Yunasfi , Mashadi , Wisnu Ari Adi , Budhy Kurniawan , Jan Setiawan

Phase purity and magnetic properties play a crucial role in determining the effectiveness of electromagnetic (EM) wave absorption. This study investigates the influence of milling duration and sintering temperature on the crystal structure, magnetic behavior, and microwave absorption performance of the perovskite material Co₀.₇₅Ni₀.₂₅Ti₀.₉₇₅Y₀.₀₂₅O₃ (CNTYO), synthesized via the solid-state reaction assisted by high-energy milling. X-ray diffraction results confirmed the formation of a single-phase perovskite structure after ≥5 h of milling. The 7 h-milled sample exhibited the best absorption performance, with a minimum reflection loss (|RL_max|) of −21.94 dB at 6.17 GHz for a thickness of 1.5 mm. Prolonged milling enhanced microstructural homogeneity and interfacial polarization, improving impedance matching between the material and free space. Sintering at higher temperatures (1100–1200 °C) induced the formation of a Ti₂Y₂O₇ secondary phase, which reduced defect density and magnetic dielectric losses, thereby weakening the overall absorption performance. The material exhibits low-magnetization magnetic behavior dominated by weak ferromagnetic or paramagnetic-like contributions. These findings emphasize that precise control of milling and sintering parameters is essential for tailoring phase purity, magnetic properties, and electromagnetic response, establishing CNTYO as a lightweight and thermally stable candidate for advanced radar-absorbing material (RAM) applications.

相位纯度和磁性能是决定电磁波吸收效果的关键因素。采用高能磨矿辅助固相反应合成了钙钛矿材料Co0.75Ni0.25Ti0.975Y0.025O3 (CNTYO)，研究了磨矿时间和烧结温度对其晶体结构、磁性行为和微波吸收性能的影响。x射线衍射结果证实，在磨矿≥5 h后，形成了单相钙钛矿结构。在厚度为1.5 mm时，在6.17 GHz处的最小反射损耗（|RLmax|）为- 21.94 dB。长时间铣削增强了显微组织的均匀性和界面极化，改善了材料与自由空间之间的阻抗匹配。高温（1100 ~ 1200℃）烧结诱导Ti2Y2O7二次相的形成，降低了缺陷密度和磁介电损耗，从而削弱了整体吸收性能。材料表现出由弱铁磁性或类顺磁性贡献主导的低磁化磁性行为。这些发现强调，精确控制铣削和烧结参数对于定制相纯度、磁性和电磁响应至关重要，从而使CNTYO成为先进雷达吸收材料（RAM）应用的轻质、热稳定的候选材料。

{"title":"Tuning phase purity, magnetic softness, and microwave absorption in Co0.75Ni0.25Ti0.975Y0.025O3 via controlled milling and sintering","authors":"Tesalonika Siregar , Yunasfi , Mashadi , Wisnu Ari Adi , Budhy Kurniawan , Jan Setiawan","doi":"10.1016/j.mssp.2025.110390","DOIUrl":"10.1016/j.mssp.2025.110390","url":null,"abstract":"<div><div>Phase purity and magnetic properties play a crucial role in determining the effectiveness of electromagnetic (EM) wave absorption. This study investigates the influence of milling duration and sintering temperature on the crystal structure, magnetic behavior, and microwave absorption performance of the perovskite material Co<sub>0</sub>.<sub>75</sub>Ni<sub>0</sub>.<sub>25</sub>Ti<sub>0</sub>.<sub>975</sub>Y<sub>0</sub>.<sub>025</sub>O<sub>3</sub> (CNTYO), synthesized via the solid-state reaction assisted by high-energy milling. X-ray diffraction results confirmed the formation of a single-phase perovskite structure after ≥5 h of milling. The 7 h-milled sample exhibited the best absorption performance, with a minimum reflection loss (|RL<sub>max</sub>|) of −21.94 dB at 6.17 GHz for a thickness of 1.5 mm. Prolonged milling enhanced microstructural homogeneity and interfacial polarization, improving impedance matching between the material and free space. Sintering at higher temperatures (1100–1200 °C) induced the formation of a Ti<sub>2</sub>Y<sub>2</sub>O<sub>7</sub> secondary phase, which reduced defect density and magnetic dielectric losses, thereby weakening the overall absorption performance. The material exhibits low-magnetization magnetic behavior dominated by weak ferromagnetic or paramagnetic-like contributions. These findings emphasize that precise control of milling and sintering parameters is essential for tailoring phase purity, magnetic properties, and electromagnetic response, establishing CNTYO as a lightweight and thermally stable candidate for advanced radar-absorbing material (RAM) applications.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"206 ","pages":"Article 110390"},"PeriodicalIF":4.6,"publicationDate":"2026-01-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145940941","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Giant ferroelastic stress modulation in AlGaN/GaN heterostructure and its transport mechanism AlGaN/GaN异质结构中的巨铁弹性应力调制及其输运机制

IF 4.6 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing

Pub Date : 2026-01-06 DOI: 10.1016/j.mssp.2026.110418

Junxiong Chai , Zhezhe Cong , Xiaoli Lu

Wide bandgap semiconductors have gained significant attention in RF device applications owing to their superior carrier mobility. To enhance the carrier mobility within the channel, researchers have employed the deposition of gate dielectrics to modulate the internal stress of GaN. Nevertheless, this dielectric deposition process inevitably introduces defects, which can detrimentally impact device performance. Our group previously demonstrated that the regulation of ferroelectric polarization effectively mitigates interface states. In this paper, the interplay between GaN internal stress and carrier mobility under the influence of nanochannel ferroelastic stress modulation has been explored. The output current and transconductance exhibited substantial enhancements, reaching 1026 mA/mm and 259 mS/mm, respectively. After the 680 nm channel formation, the compressive stress was reduced to 0.37 GPa, with carrier mobility increasing to 2610 cm²/V·s (110 % of the initial value). The reduction of compressive stress improves carrier mobility to a certain extent. This research provides a straightforward and efficacious approach to investigating the factors through which ferroelastic modulation influences the internal stress in GaN.

宽带隙半导体由于其优越的载流子迁移性，在射频器件应用中得到了极大的关注。为了提高沟道内载流子的迁移率，研究人员采用栅极电介质沉积来调节氮化镓的内应力。然而，这种介质沉积过程不可避免地会引入缺陷，从而对器件性能产生不利影响。我们的团队先前证明了铁电极化的调节有效地减轻了界面状态。本文探讨了纳米通道铁弹性应力调制影响下氮化镓内应力与载流子迁移率之间的相互作用。输出电流和跨导均有显著增强，分别达到1026 mA/mm和259 mS/mm。在680 nm通道形成后，压缩应力降低到0.37 GPa，载流子迁移率增加到2610 cm2/V·s（为初始值的110%）。压应力的减小在一定程度上提高了载流子的迁移率。本研究为研究铁弹性调制影响氮化镓内应力的因素提供了一种简单有效的方法。

{"title":"Giant ferroelastic stress modulation in AlGaN/GaN heterostructure and its transport mechanism","authors":"Junxiong Chai , Zhezhe Cong , Xiaoli Lu","doi":"10.1016/j.mssp.2026.110418","DOIUrl":"10.1016/j.mssp.2026.110418","url":null,"abstract":"<div><div>Wide bandgap semiconductors have gained significant attention in RF device applications owing to their superior carrier mobility. To enhance the carrier mobility within the channel, researchers have employed the deposition of gate dielectrics to modulate the internal stress of GaN. Nevertheless, this dielectric deposition process inevitably introduces defects, which can detrimentally impact device performance. Our group previously demonstrated that the regulation of ferroelectric polarization effectively mitigates interface states. In this paper, the interplay between GaN internal stress and carrier mobility under the influence of nanochannel ferroelastic stress modulation has been explored. The output current and transconductance exhibited substantial enhancements, reaching 1026 mA/mm and 259 mS/mm, respectively. After the 680 nm channel formation, the compressive stress was reduced to 0.37 GPa, with carrier mobility increasing to 2610 cm<sup>2</sup>/V·s (110 % of the initial value). The reduction of compressive stress improves carrier mobility to a certain extent. This research provides a straightforward and efficacious approach to investigating the factors through which ferroelastic modulation influences the internal stress in GaN.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"206 ","pages":"Article 110418"},"PeriodicalIF":4.6,"publicationDate":"2026-01-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145940875","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

2 kV normally-off recessed p-NiO gate GaN-based HEMTs fabricated using “buffer-free” AlGaN/GaN heterostructures on SiC substrates 在SiC衬底上采用“无缓冲”AlGaN/GaN异质结构制备的2kv常关凹槽p-NiO栅极GaN基hemt

IF 4.6 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing

Pub Date : 2026-01-05 DOI: 10.1016/j.mssp.2025.110385

Justyna Wierzbicka , Wojciech Hendzelek , Maciej Kamiński , Jarosław Tarenko , Joanna Jankowska-Śliwińska , Aleksandra Wójcicka , Oskar Sadowski , Aneta Gołębiowska , Krzysztof Urbanowski , Veronica Gao Zhan , Anna Szerling , Andrzej Taube

The usage of p-NiO-based gate architecture can be beneficial over conventionally used p-GaN gate structure in the construction of normally-off GaN-based high electron mobility transistors, due to simpler, cost-effective and low-thermal budget fabrication process flow. Here in this work we report normally-off recessed p-NiO gate GaN-based HEMTs fabricated on "buffer-free" AlGaN/GaN heterostructure on 4H-SiC substrate. By using 17 nm recess p-NiO gate structure, appropriate post-deposition annealing and passivation scheme high positive threshold +0.8V (+0.2 V), high drain output current over 0.7 A/mm and low subthreshold swing 80 mV/dec and on-state resistance 10 Ωmm were obtained simultaneously. Thanks to the use of a high-quality heterostructure on a semi-insulating substrate and the absence of substrate leakage current, normally-off devices with high breakdown voltage values of up to 2 kV for a gate-drain distance of 20 μm were achieved, which corresponds to an average breakdown field value of 1 MV/cm, without the use of additional field-plate termination structures.

基于p- nio的栅极结构比传统的p-GaN栅极结构更有利于构建基于gan的高电子迁移率晶体管，因为它更简单，成本效益和低热预算的制造工艺流程。在这项工作中，我们报道了在4H-SiC衬底上“无缓冲”AlGaN/GaN异质结构上制造的正常关闭的p-NiO栅极GaN基hemt。采用17 nm凹槽p-NiO栅极结构，采用适当的沉积后退火和钝化方案，同时获得高正阈值+0.8V (+0.2 V)，高漏极输出电流大于0.7 A/mm，低亚阈值摆幅80 mV/dec和导通电阻10 Ωmm。由于在半绝缘衬底上使用了高质量的异质结构，并且没有衬底泄漏电流，因此在栅极-漏极距离为20 μm的情况下，实现了具有高达2 kV的高击穿电压值的正常关闭器件，这相当于平均击穿场值为1 MV/cm，而无需使用额外的场板端接结构。

{"title":"2 kV normally-off recessed p-NiO gate GaN-based HEMTs fabricated using “buffer-free” AlGaN/GaN heterostructures on SiC substrates","authors":"Justyna Wierzbicka , Wojciech Hendzelek , Maciej Kamiński , Jarosław Tarenko , Joanna Jankowska-Śliwińska , Aleksandra Wójcicka , Oskar Sadowski , Aneta Gołębiowska , Krzysztof Urbanowski , Veronica Gao Zhan , Anna Szerling , Andrzej Taube","doi":"10.1016/j.mssp.2025.110385","DOIUrl":"10.1016/j.mssp.2025.110385","url":null,"abstract":"<div><div>The usage of p-NiO-based gate architecture can be beneficial over conventionally used p-GaN gate structure in the construction of normally-off GaN-based high electron mobility transistors, due to simpler, cost-effective and low-thermal budget fabrication process flow. Here in this work we report normally-off recessed p-NiO gate GaN-based HEMTs fabricated on \"buffer-free\" AlGaN/GaN heterostructure on 4H-SiC substrate. By using 17 nm recess p-NiO gate structure, appropriate post-deposition annealing and passivation scheme high positive threshold +0.8V (+0.2 V), high drain output current over 0.7 A/mm and low subthreshold swing 80 mV/dec and on-state resistance 10 Ωmm were obtained simultaneously. Thanks to the use of a high-quality heterostructure on a semi-insulating substrate and the absence of substrate leakage current, normally-off devices with high breakdown voltage values of up to 2 kV for a gate-drain distance of 20 μm were achieved, which corresponds to an average breakdown field value of 1 MV/cm, without the use of additional field-plate termination structures.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"206 ","pages":"Article 110385"},"PeriodicalIF":4.6,"publicationDate":"2026-01-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145940940","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Development of self-powered PVDF based MEMS sensors for sound pressure level measurements 基于自供电PVDF的MEMS声压级测量传感器的开发

IF 4.6 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing

Pub Date : 2026-01-05 DOI: 10.1016/j.mssp.2025.110391

Mohini Sawane , Mahanth Prasad , Murugan S. , Velmurugan K.

The piezoelectric MEMS sensor's market is experiencing rapid expansion, driven by self-powered operation, compact form factors, and scalable manufacturing. A novel fabrication technique using minimized fabrication processes and clean room resources were developed to produce cost-effective, compact and lightweight sensors. Microtunnel and through-hole cavity are etched into a silicon substrate and sealed with glass via anodic bonding. A PVDF-based diaphragm is bonded at the front side using vacuum-assisted mounting. Designed and developed PVDF based sensor variants (ST501–ST503 and ST1201–ST1203) were benchmarked against a Brüel & Kjær 4944A reference microphone using a B&K 4292-L loudspeaker and Noise Generator Type 1405. Their output closely matched the calibrated reference microphone tested for 1/3rd octave frequency range from 125Hz to 2 kHz, indicating high accuracy and reproducibility. Overall, the fabricated sensors exhibit reliable SPL measurement performance comparable to industry-standard microphone.

压电MEMS传感器的市场正在经历快速扩张，受自供电操作，紧凑的外形因素和可扩展的制造驱动。利用最小化的制造工艺和洁净室资源，开发了一种新型的制造技术，以生产成本低、结构紧凑、重量轻的传感器。微隧道和通孔腔蚀刻在硅衬底上，并通过阳极键合用玻璃密封。使用真空辅助安装的pvdf基隔膜粘合在前部。设计和开发的基于PVDF的传感器变体（ST501-ST503和ST1201-ST1203）与使用B&；K 4292-L扬声器和1405型噪声发生器的br el &；K ær 4944A参考麦克风进行基准测试。它们的输出与校准的参考麦克风在1/3倍频频率范围内（125Hz至2khz）进行测试，显示出高精度和再现性。总体而言，制造的传感器具有可靠的声压级测量性能，可与行业标准麦克风相媲美。

引用次数: 0

Solution blow spun porous cobalt oxide nanofibers via cryogenic bath as oxygen evolution catalysts 低温浴液吹纺多孔氧化钴纳米纤维作为析氧催化剂

IF 4.6 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing

Pub Date : 2026-01-05 DOI: 10.1016/j.mssp.2025.110400

Maxwell F.L. Garcia , Luis C.C. Arzuza , Allan J.M. Araújo , Rafael A. Raimundo , Gelmires A. Neves , Daniel A. Macedo , Francisco J.A. Loureiro , Romualdo R. Menezes

Electrochemical water splitting (EWS) into hydrogen and oxygen is essential for clean energy and a sustainable future. However, the most significant obstacle is the several anode oxygen evolution reaction (OER) processes, which limit practical applications. Nanofibers are one-dimensional materials with a large surface area, making them ideal to produce electrodes. By adjusting their secondary morphology (porosity, roughness, or grooves), their catalytic properties can be improved. This work emphasizes the production of porous ceramic fibers by solution blow spinning (SBS) method in conjunction with a cryogenic bath and phase separation by freeze-drying. Co₃O₄ Cryo-SBS nanofibers enhance the OER properties by altering their surface morphology, creating more porosity for better access to active sites and improved surface reactivity. The significant performance of the cryogenic nanofibers required an overpotentials of η₁₀ = 320 mV in solution 1M KOH, whereas SBS-produced nanofibers typically require 353 mV for the same current density. At high current densities, Cryo-SBS nanofibers showed good performance for OER at an industrial scale. The overpotential values are like those of many metal oxides/hydroxides and reference materials like commercial IrO₂ and RuO₂. The results show that the modification of the nanofibers surface by freezing was effective in increasing the OER activity.

电化学水分解（EWS）为氢和氧是清洁能源和可持续未来的必要条件。然而，最大的障碍是几种阳极析氧反应（OER）工艺，这限制了实际应用。纳米纤维是一种具有大表面积的一维材料，使其成为制造电极的理想材料。通过调整它们的次级形态（孔隙度、粗糙度或凹槽），它们的催化性能可以得到改善。本文着重研究了用溶液吹丝法（SBS）结合低温浴和冷冻干燥相分离法制备多孔陶瓷纤维。Co3O4 Cryo-SBS纳米纤维通过改变其表面形态，创造更多孔隙以更好地进入活性位点和提高表面反应性来提高OER性能。低温纳米纤维在1M KOH溶液中的过电位要求为η10 = 320 mV，而sbs生产的纳米纤维在相同的电流密度下通常需要353 mV。在高电流密度下，Cryo-SBS纳米纤维在工业规模上表现出良好的OER性能。过电位值类似于许多金属氧化物/氢氧化物和参考材料，如商用IrO2和RuO2。结果表明，通过冷冻对纳米纤维表面进行改性可以有效地提高OER活性。

{"title":"Solution blow spun porous cobalt oxide nanofibers via cryogenic bath as oxygen evolution catalysts","authors":"Maxwell F.L. Garcia , Luis C.C. Arzuza , Allan J.M. Araújo , Rafael A. Raimundo , Gelmires A. Neves , Daniel A. Macedo , Francisco J.A. Loureiro , Romualdo R. Menezes","doi":"10.1016/j.mssp.2025.110400","DOIUrl":"10.1016/j.mssp.2025.110400","url":null,"abstract":"<div><div>Electrochemical water splitting (EWS) into hydrogen and oxygen is essential for clean energy and a sustainable future. However, the most significant obstacle is the several anode oxygen evolution reaction (OER) processes, which limit practical applications. Nanofibers are one-dimensional materials with a large surface area, making them ideal to produce electrodes. By adjusting their secondary morphology (porosity, roughness, or grooves), their catalytic properties can be improved. This work emphasizes the production of porous ceramic fibers by solution blow spinning (SBS) method in conjunction with a cryogenic bath and phase separation by freeze-drying. Co<sub>3</sub>O<sub>4</sub> Cryo-SBS nanofibers enhance the OER properties by altering their surface morphology, creating more porosity for better access to active sites and improved surface reactivity. The significant performance of the cryogenic nanofibers required an overpotentials of η<sub>10</sub> = 320 mV in solution 1M KOH, whereas SBS-produced nanofibers typically require 353 mV for the same current density. At high current densities, Cryo-SBS nanofibers showed good performance for OER at an industrial scale. The overpotential values are like those of many metal oxides/hydroxides and reference materials like commercial IrO<sub>2</sub> and RuO<sub>2</sub>. The results show that the modification of the nanofibers surface by freezing was effective in increasing the OER activity.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"206 ","pages":"Article 110400"},"PeriodicalIF":4.6,"publicationDate":"2026-01-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145895938","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Metal-free peroxymonosulfate activation for phenol degradation using selenium–nitrogen co-doped porous carbon nanosheets 硒-氮共掺杂多孔碳纳米片无金属过氧单硫酸盐活化降解苯酚

IF 4.6 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing

Pub Date : 2026-01-05 DOI: 10.1016/j.mssp.2025.110399

Fangzhou Wu , Yonglei Xing , Huijuan Liu , Xiaoyong Jin , Gang Ni

Peroxymonosulfate (PMS)–based advanced oxidation processes (AOPs) are promising for pollutant removal, whereas metal-doped carbons risk ion leaching. Here we report a metal-free selenium–nitrogen co-doped porous carbon (Se–N/C) that efficiently activates PMS for phenol (Ph) degradation. Selenium was chosen for its larger atomic radius and high polarizability, which modulate electronic structure and create active sites. Se–N/C achieved complete removal of parent Ph (Ph peak disappearance) within 10 min with a total organic carbon (TOC) reduction of 52 %, and a pseudo-first-order rate constant about twentyfold higher than nitrogen-doped carbon. Radical scavenging tests and electron paramagnetic resonance (EPR) confirm a dual pathway involving radical (O₂^•−) and non-radical (¹O₂) species. Density functional theory (DFT) indicates that co-doping tailors the electronic configuration, strengthens PMS adsorption (adsorption energy −3.07 eV), and enhances electron transfer. The catalyst remains active in the presence of common anions (SO₄²⁻, Cl⁻, NO₃⁻, and H₂PO₄⁻) and humic acid, evidencing environmental tolerance. X-ray photoelectron spectroscopy and Raman spectroscopy identify graphitic nitrogen and C–Se–C as key centers, while selenium's antioxidative character supports cycling stability. This work provides a scalable, environmentally benign route for wastewater treatment and clarifies structure–activity relationships in PMS activation.

过氧单硫酸盐（PMS）为基础的高级氧化工艺（AOPs）是有前途的污染物去除，而金属掺杂碳的风险离子浸出。在这里，我们报道了一种无金属硒-氮共掺杂多孔碳（Se-N /C），可以有效地激活PMS降解苯酚（Ph）。选择硒是因为其较大的原子半径和高极化率，可以调节电子结构并产生活性位点。Se-N /C在10 min内完全去除母体Ph （Ph峰消失），总有机碳（TOC）减少52%，伪一级速率常数比氮掺杂碳高约20倍。自由基清除试验和电子顺磁共振（EPR）证实了涉及自由基（O2•−）和非自由基（1O2）的双重途径。密度泛函理论（DFT）表明，共掺杂调整了电子构型，增强了PMS吸附（吸附能- 3.07 eV），增强了电子转移。该催化剂在常见阴离子（SO42−、Cl−、NO3−和H2PO4−）和腐植酸存在下仍保持活性，具有良好的环境耐受性。x射线光电子能谱和拉曼光谱鉴定石墨氮和C-Se-C为关键中心，而硒的抗氧化特性支持循环稳定性。这项工作为废水处理提供了一种可扩展的、环保的途径，并阐明了PMS活化中的结构-活性关系。

{"title":"Metal-free peroxymonosulfate activation for phenol degradation using selenium–nitrogen co-doped porous carbon nanosheets","authors":"Fangzhou Wu , Yonglei Xing , Huijuan Liu , Xiaoyong Jin , Gang Ni","doi":"10.1016/j.mssp.2025.110399","DOIUrl":"10.1016/j.mssp.2025.110399","url":null,"abstract":"<div><div>Peroxymonosulfate (PMS)–based advanced oxidation processes (AOPs) are promising for pollutant removal, whereas metal-doped carbons risk ion leaching. Here we report a metal-free selenium–nitrogen co-doped porous carbon (Se–N/C) that efficiently activates PMS for phenol (Ph) degradation. Selenium was chosen for its larger atomic radius and high polarizability, which modulate electronic structure and create active sites. Se–N/C achieved complete removal of parent Ph (Ph peak disappearance) within 10 min with a total organic carbon (TOC) reduction of 52 %, and a pseudo-first-order rate constant about twentyfold higher than nitrogen-doped carbon. Radical scavenging tests and electron paramagnetic resonance (EPR) confirm a dual pathway involving radical (O<sub>2</sub><sup>•−</sup>) and non-radical (<sup>1</sup>O<sub>2</sub>) species. Density functional theory (DFT) indicates that co-doping tailors the electronic configuration, strengthens PMS adsorption (adsorption energy −3.07 eV), and enhances electron transfer. The catalyst remains active in the presence of common anions (SO<sub>4</sub><sup>2−</sup>, Cl<sup>−</sup>, NO<sub>3</sub><sup>−</sup>, and H<sub>2</sub>PO<sub>4</sub><sup>−</sup>) and humic acid, evidencing environmental tolerance. X-ray photoelectron spectroscopy and Raman spectroscopy identify graphitic nitrogen and C–Se–C as key centers, while selenium's antioxidative character supports cycling stability. This work provides a scalable, environmentally benign route for wastewater treatment and clarifies structure–activity relationships in PMS activation.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"206 ","pages":"Article 110399"},"PeriodicalIF":4.6,"publicationDate":"2026-01-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145940937","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Resistive switching characteristics of a Bi-2212/NSTO heterostructure Bi-2212/NSTO异质结构的电阻开关特性

IF 4.6 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing

Pub Date : 2026-01-04 DOI: 10.1016/j.mssp.2026.110407

MeiLin Wu , Tao Zhang , Hongmin Xue , ZhiLong Deng , TianTian Yang

Interface-type resistive switching (RS) devices are promising candidates for next-generation non-volatile memory and neuromorphic computing. However, conventional metal/Nb:SrTiO₃(NSTO) structures often exhibit pronounced performance instability due to interface disorder, which complicates the investigation of underlying RS mechanisms and hinders device optimization. To address this challenge, this study utilizes the low lattice mismatch between the high-temperature superconductor Bi₂Sr₂CaCu₂O_8+x (Bi-2212) and NSTO. High-quality Bi-2212 superconducting films were epitaxially grown on NSTO substrates via pulsed laser deposition. Aberration-corrected scanning transmission electron microscopy confirms the formation of an atomically sharp and coherent interface. Electrical characterization reveals a distinctive “clockwise” RS hysteresis, where the device switches initially from a low-resistance state to a high-resistance state under positive bias, demonstrating excellent non-volatility and retention properties. Comparative current-voltage measurements under UV illumination, alongside electron energy loss spectrum and X-ray photoelectron spectroscopy analysis, suggest an RS mechanism driven by the electric-field-induced migration and subsequent accumulation of oxygen vacancies from the Bi-2212 layer toward the interface. This process induces a localized resistance increase (insulating transition) within the Bi-2212 layer near the interface, a mechanism distinct from the Schottky barrier modulation typically observed in metal/NSTO systems. Temperature-dependent measurements demonstrate stable RS operation over a broad temperature range (10–280 K). Notably, the switching ratio and a defined figure-of-merit are enhanced at lower temperatures, highlighting the structure's potential for cryogenic electronics applications. Analysis of the current transport mechanism indicates that Ohmic conduction dominates at low electric fields, while space-charge-limited conduction prevails at higher fields. This transition exhibits a clear temperature dependence. This work provides valuable experimental insights for developing high-performance RS devices based on coherent oxide hetero-interfaces.

接口型电阻开关（RS）器件是下一代非易失性存储器和神经形态计算的有前途的候选者。然而，由于界面紊乱，传统的金属/Nb:SrTiO3（NSTO）结构往往表现出明显的性能不稳定性，这使得对潜在RS机制的研究变得复杂，并阻碍了器件的优化。为了解决这一挑战，本研究利用了高温超导体Bi2Sr2CaCu2O8+x （Bi-2212）与NSTO之间的低晶格失配。利用脉冲激光沉积技术在NSTO衬底上外延生长出高质量的Bi-2212超导薄膜。像差校正扫描透射电子显微镜证实了原子锐利和相干界面的形成。电特性显示出独特的“顺时针”RS迟滞，器件在正偏置下最初从低电阻状态切换到高电阻状态，表现出优异的非挥发性和保持性能。紫外照射下的电流电压比较测量，以及电子能量损失谱和x射线光电子能谱分析表明，电场诱导的迁移和随后从Bi-2212层向界面的氧空位积累驱动了RS机制。该过程在靠近界面的Bi-2212层内引起局部电阻增加（绝缘跃迁），这一机制不同于在金属/NSTO系统中通常观察到的肖特基势垒调制。与温度相关的测量表明，RS在很宽的温度范围内（10-280 K）运行稳定。值得注意的是，在较低的温度下，开关比和定义的性能值得到了增强，突出了该结构在低温电子应用中的潜力。电流输运机制分析表明，在低电场下以欧姆传导为主，而在高电场下以空间电荷限制传导为主。这种转变表现出明显的温度依赖性。这项工作为开发基于相干氧化物异质界面的高性能RS器件提供了有价值的实验见解。

{"title":"Resistive switching characteristics of a Bi-2212/NSTO heterostructure","authors":"MeiLin Wu , Tao Zhang , Hongmin Xue , ZhiLong Deng , TianTian Yang","doi":"10.1016/j.mssp.2026.110407","DOIUrl":"10.1016/j.mssp.2026.110407","url":null,"abstract":"<div><div>Interface-type resistive switching (RS) devices are promising candidates for next-generation non-volatile memory and neuromorphic computing. However, conventional metal/Nb:SrTiO<sub>3</sub>(NSTO) structures often exhibit pronounced performance instability due to interface disorder, which complicates the investigation of underlying RS mechanisms and hinders device optimization. To address this challenge, this study utilizes the low lattice mismatch between the high-temperature superconductor Bi<sub>2</sub>Sr<sub>2</sub>CaCu<sub>2</sub>O<sub>8+x</sub> (Bi-2212) and NSTO. High-quality Bi-2212 superconducting films were epitaxially grown on NSTO substrates via pulsed laser deposition. Aberration-corrected scanning transmission electron microscopy confirms the formation of an atomically sharp and coherent interface. Electrical characterization reveals a distinctive “clockwise” RS hysteresis, where the device switches initially from a low-resistance state to a high-resistance state under positive bias, demonstrating excellent non-volatility and retention properties. Comparative current-voltage measurements under UV illumination, alongside electron energy loss spectrum and X-ray photoelectron spectroscopy analysis, suggest an RS mechanism driven by the electric-field-induced migration and subsequent accumulation of oxygen vacancies from the Bi-2212 layer toward the interface. This process induces a localized resistance increase (insulating transition) within the Bi-2212 layer near the interface, a mechanism distinct from the Schottky barrier modulation typically observed in metal/NSTO systems. Temperature-dependent measurements demonstrate stable RS operation over a broad temperature range (10–280 K). Notably, the switching ratio and a defined figure-of-merit are enhanced at lower temperatures, highlighting the structure's potential for cryogenic electronics applications. Analysis of the current transport mechanism indicates that Ohmic conduction dominates at low electric fields, while space-charge-limited conduction prevails at higher fields. This transition exhibits a clear temperature dependence. This work provides valuable experimental insights for developing high-performance RS devices based on coherent oxide hetero-interfaces.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"205 ","pages":"Article 110407"},"PeriodicalIF":4.6,"publicationDate":"2026-01-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145939375","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Switchable external field response properties induced by ferroelectric polarization in α-In2Se3/HfS2 heterostructures α-In2Se3/HfS2异质结构中铁电极化诱导的可切换外场响应特性

IF 4.6 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing

Pub Date : 2026-01-03 DOI: 10.1016/j.mssp.2025.110396

Renwei Guo , Yang Liu , Xianbin Zhang

Two-dimensional ferroelectric heterostructures demonstrate significant application potential in novel optoelectronic devices due to their unique spontaneous polarization and outstanding external field response characteristics. This work employs first-principles calculations to investigate the effects of applied electric fields and biaxial strain on the electronic and optical properties of α-In₂Se₃/HfS₂ heterostructures. Calculations reveal that flipping the ferroelectric polarization of In₂Se₃ enables the heterostructure to switch between two distinct operating modes: the upward polarization mode exhibits high responsiveness to external fields, where a small electric field (−0.1 eV/Å) or strain (±2 %) induces II-I band structure transformation, 0–1eV bandgap tuning, and dynamic switching between the conduction band minimum and valence band maximum layer distribution; The downward polarization mode exhibits outstanding interference resistance, maintaining a stable Type-II band structure even under strong external perturbations (electric field ±0.5 eV/Å, strain −6 %–4 %). More intriguingly, the optical absorption intensity changes under identical strain conditions show completely opposite trends between the two polarization states, reflecting complex interactions between the ferroelectric field and strain effects. This study provides new insights into the external field regulation physics of ferroelectric heterostructures and points the way toward designing novel optoelectronic devices that combine high performance with multifunctionality.

二维铁电异质结构由于其独特的自发极化和出色的外场响应特性，在新型光电器件中具有重要的应用潜力。本文采用第一性原理计算研究了外加电场和双轴应变对α-In2Se3/HfS2异质结构的电子和光学性质的影响。计算表明，翻转In2Se3的铁电极化使异质结构在两种不同的工作模式之间切换：向上极化模式对外部场具有高响应性，其中小电场（−0.1 eV/Å）或应变（±2%）诱导i - i - i带结构转变，0-1eV带隙调谐，并在导带最小和价带最大层分布之间动态切换；下极化模式表现出优异的抗干扰性，即使在强的外部扰动（电场±0.5 eV/Å，应变−6% - 4%）下也能保持稳定的ii型能带结构。更有趣的是，在相同应变条件下，两种极化状态下的光吸收强度变化呈现完全相反的趋势，反映了铁电场与应变效应之间复杂的相互作用。该研究为铁电异质结构的外场调节物理提供了新的见解，并为设计高性能与多功能相结合的新型光电器件指明了方向。

{"title":"Switchable external field response properties induced by ferroelectric polarization in α-In2Se3/HfS2 heterostructures","authors":"Renwei Guo , Yang Liu , Xianbin Zhang","doi":"10.1016/j.mssp.2025.110396","DOIUrl":"10.1016/j.mssp.2025.110396","url":null,"abstract":"<div><div>Two-dimensional ferroelectric heterostructures demonstrate significant application potential in novel optoelectronic devices due to their unique spontaneous polarization and outstanding external field response characteristics. This work employs first-principles calculations to investigate the effects of applied electric fields and biaxial strain on the electronic and optical properties of α-In<sub>2</sub>Se<sub>3</sub>/HfS<sub>2</sub> heterostructures. Calculations reveal that flipping the ferroelectric polarization of In<sub>2</sub>Se<sub>3</sub> enables the heterostructure to switch between two distinct operating modes: the upward polarization mode exhibits high responsiveness to external fields, where a small electric field (−0.1 eV/Å) or strain (±2 %) induces II-I band structure transformation, 0–1eV bandgap tuning, and dynamic switching between the conduction band minimum and valence band maximum layer distribution; The downward polarization mode exhibits outstanding interference resistance, maintaining a stable Type-II band structure even under strong external perturbations (electric field ±0.5 eV/Å, strain −6 %–4 %). More intriguingly, the optical absorption intensity changes under identical strain conditions show completely opposite trends between the two polarization states, reflecting complex interactions between the ferroelectric field and strain effects. This study provides new insights into the external field regulation physics of ferroelectric heterostructures and points the way toward designing novel optoelectronic devices that combine high performance with multifunctionality.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"205 ","pages":"Article 110396"},"PeriodicalIF":4.6,"publicationDate":"2026-01-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145881141","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Fabrication of novel goethite analogues photocatalyst with enriched oxygen vacancies and Fe2+/Fe3+ cycle sites for peroxymonosulfate activation: A synergistic catalytic for ofloxacin degradation 具有富氧空位和Fe2+/Fe3+循环位点的新型针铁矿类似物光催化剂的制备及其对氧氟沙星降解的协同催化作用

IF 4.6 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing

Pub Date : 2026-01-03 DOI: 10.1016/j.mssp.2025.110404

Chu-Chu Hu , Jian-Tao Jiang , Yan Pan, Guo-Qing Zhao, Qi-E Zhang, Meng-Ting He, A-Li Yu, Xun-Kuan Ye, Limin Lu

The sluggish surface reaction kinetics and the unclear synergistic catalytic mechanism of oxygen vacancies and Fe²⁺/Fe³⁺ cycles were the bottleneck issues that restricted the activation of peroxymonosulfate (PMS) for pollutant removal. Herein, an effective alternative catalyst of natural cheap mineral materials (G-0.05) with oxygen vacancies and Fe²⁺/Fe³⁺ cycle properties was fabricated and applied it as a PMS activation for ofloxacin (OFX) degradation. As a result, 91.1 % of OFX can be eliminated within 40 min in G-0.05/PMS/Vis system, which was 4.29 times higher than the pristine goethite (GT). According to the EPR and quenching tests, several species (SO₄^∙-, ∙OH, ∙O₂^- and ¹O₂) could be contemporaneously generated in G-0.05/PMS/Vis system and SO₄^∙-, ∙O₂^- and ¹O₂ proved to be the crucial active species in the degradation of OFX. Moreover, in order to enhance the photocatalytic stability of the aimed catalysts, G-0.05 was assembled with an ordinary hydrogel and the fabricated G-0.05/Ca-alginate spherical hydrogel exhibited the elimination efficiency of over 80 % for OFX after five cycles. Catalytic mechanism revealed that the synergistic effects of the Fe²⁺/Fe³⁺ and oxygen vacancies were conductive to the PMS activation and OFX degradation. Furthermore, a possible degradation mechanism of OFX in the G-0.05/PMS/Vis system was proposed. All in all, the G-0.05/PMS/Vis system revealed its effectiveness as an eco-friendly technology for purifying organic contaminants wastewater.

表面反应动力学迟缓，氧空位和Fe2+/Fe3+循环的协同催化机制不明确是制约过氧单硫酸盐（PMS）活化去除污染物的瓶颈问题。本文制备了一种具有氧空位和Fe2+/Fe3+循环性能的天然廉价矿物材料（G-0.05）的有效替代催化剂，并将其作为PMS活化降解氧氟沙星（OFX）。结果表明，在G-0.05/PMS/Vis体系中，40 min内OFX的去除率为91.1%，是原始针铁矿（GT）的4.29倍。EPR和淬灭实验结果表明，在G-0.05/PMS/Vis体系中可同时生成SO4∙∙-、∙OH、∙O2-和1O2等多种物质，SO4∙-、∙O2-和1O2是OFX降解的关键活性物质。此外，为了提高目标催化剂的光催化稳定性，将G-0.05与普通水凝胶组装在一起，制备的G-0.05/海藻酸钙球形水凝胶在5个循环后对OFX的去除效率超过80%。催化机理表明，Fe2+/Fe3+和氧空位的协同作用有利于PMS的活化和OFX的降解。进一步探讨了OFX在G-0.05/PMS/Vis体系中降解的可能机制。总之，G-0.05/PMS/Vis系统显示了其作为一种环保技术净化有机污染物废水的有效性。

{"title":"Fabrication of novel goethite analogues photocatalyst with enriched oxygen vacancies and Fe2+/Fe3+ cycle sites for peroxymonosulfate activation: A synergistic catalytic for ofloxacin degradation","authors":"Chu-Chu Hu , Jian-Tao Jiang , Yan Pan, Guo-Qing Zhao, Qi-E Zhang, Meng-Ting He, A-Li Yu, Xun-Kuan Ye, Limin Lu","doi":"10.1016/j.mssp.2025.110404","DOIUrl":"10.1016/j.mssp.2025.110404","url":null,"abstract":"<div><div>The sluggish surface reaction kinetics and the unclear synergistic catalytic mechanism of oxygen vacancies and Fe<sup>2+</sup>/Fe<sup>3+</sup> cycles were the bottleneck issues that restricted the activation of peroxymonosulfate (PMS) for pollutant removal. Herein, an effective alternative catalyst of natural cheap mineral materials (G-0.05) with oxygen vacancies and Fe<sup>2+</sup>/Fe<sup>3+</sup> cycle properties was fabricated and applied it as a PMS activation for ofloxacin (OFX) degradation. As a result, 91.1 % of OFX can be eliminated within 40 min in G-0.05/PMS/Vis system, which was 4.29 times higher than the pristine goethite (GT). According to the EPR and quenching tests, several species (SO<sub>4</sub><sup>∙-</sup>, ∙OH, ∙O<sub>2</sub><sup>-</sup> and <sup>1</sup>O<sub>2</sub>) could be contemporaneously generated in G-0.05/PMS/Vis system and SO<sub>4</sub><sup>∙-</sup>, ∙O<sub>2</sub><sup>-</sup> and <sup>1</sup>O<sub>2</sub> proved to be the crucial active species in the degradation of OFX. Moreover, in order to enhance the photocatalytic stability of the aimed catalysts, G-0.05 was assembled with an ordinary hydrogel and the fabricated G-0.05/Ca-alginate spherical hydrogel exhibited the elimination efficiency of over 80 % for OFX after five cycles. Catalytic mechanism revealed that the synergistic effects of the Fe<sup>2+</sup>/Fe<sup>3+</sup> and oxygen vacancies were conductive to the PMS activation and OFX degradation. Furthermore, a possible degradation mechanism of OFX in the G-0.05/PMS/Vis system was proposed. All in all, the G-0.05/PMS/Vis system revealed its effectiveness as an eco-friendly technology for purifying organic contaminants wastewater.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"205 ","pages":"Article 110404"},"PeriodicalIF":4.6,"publicationDate":"2026-01-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145939372","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Tailoring structural, optical, and electrochemical properties of Mn-doped SnS nanoparticles via a facile Co-precipitation route 通过快速共沉淀法制备mn掺杂SnS纳米粒子的结构、光学和电化学性能

IF 4.6 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing

Pub Date : 2025-12-31 DOI: 10.1016/j.mssp.2025.110374

Veerapandiyan Arumugam , P. Elaiyaraja , M. Dhilip , I. Devadoss , A. Krishnamoorthy , P. Sakthivel

Tin monosulfide (SnS) is a promising binary semiconductor with significant potential for optical and electrochemical device applications. This research entailed the synthesis of manganese-doped tin sulfide nanoparticles via a co-precipitation technique. The structural, morphological, optical, and electrochemical properties were thoroughly analyzed using powder X-ray diffraction (PXRD), field emission scanning electron microscopy (FESEM), UV–visible spectroscopy, Fourier-transform infrared (FTIR) spectroscopy, Raman spectroscopy, photoluminescence (PL) analysis, cyclic voltammetry (CV), and electrochemical impedance spectroscopy (EIS). PXRD analysis confirmed the orthorhombic phase of SnS, with crystallite sizes ranging from 0.35 to 1.65 nm, as determined by the Debye–Scherrer equation. Optical investigations demonstrated an indirect band gap ranging from 1.230 eV to 1.290 eV with manganese doping. The photoluminescence spectra exhibited a significant emission peak at 725 nm. The Raman spectra demonstrated the presence of a secondary Sn₂S₃ phase, as evidenced by the significant Ag vibrational modes at 225 cm⁻¹ and an additional peak at 307 cm⁻¹. The successful incorporation of Mn into the SnS lattice was confirmed by EDX analysis, while FESEM images demonstrated uniformly distributed spherical nanoparticles. Electrochemical investigations revealed that the Mn-0.1 sample displayed enhanced specific capacitance relative to undoped SnS and other Mn concentrations. Nonetheless, EIS analysis demonstrated increased charge transfer resistance in the Mn-0.1 sample, signifying diminished ion diffusion. Conversely, other Mn-doped samples exhibited enhanced charge transfer characteristics. Manganese doping markedly improves the optical and electrochemical properties of SnS nanoparticles, rendering them appropriate for multifunctional optoelectronic applications.

单硫化锡是一种很有前途的二元半导体材料，在光学和电化学器件中具有重要的应用潜力。本研究通过共沉淀法合成了掺杂锰的硫化锡纳米颗粒。采用粉末x射线衍射（PXRD）、场发射扫描电镜（FESEM）、紫外-可见光谱、傅里叶变换红外（FTIR）光谱、拉曼光谱、光致发光（PL）分析、循环伏安法（CV）和电化学阻抗谱（EIS）对其结构、形态、光学和电化学性能进行了全面分析。根据Debye-Scherrer方程，PXRD分析证实了SnS的正交相，晶粒尺寸在0.35 ~ 1.65 nm之间。光学研究表明，掺杂锰后，间接带隙在1.230 ~ 1.290 eV之间。光致发光光谱在725 nm处有明显的发射峰。拉曼光谱显示了Sn2S3相的存在，在225 cm−1处有明显的Ag振动模式，在307 cm−1处有一个额外的峰。EDX分析证实了Mn成功结合到SnS晶格中，而FESEM图像显示均匀分布的球形纳米颗粒。电化学研究表明，相对于未掺杂的SnS和其他Mn浓度，Mn-0.1样品具有增强的比电容。尽管如此，EIS分析表明Mn-0.1样品中的电荷转移阻力增加，表明离子扩散减弱。相反，其他掺杂锰的样品表现出增强的电荷转移特性。锰的掺杂显著改善了SnS纳米粒子的光学和电化学性能，使其适合于多功能光电应用。

{"title":"Tailoring structural, optical, and electrochemical properties of Mn-doped SnS nanoparticles via a facile Co-precipitation route","authors":"Veerapandiyan Arumugam , P. Elaiyaraja , M. Dhilip , I. Devadoss , A. Krishnamoorthy , P. Sakthivel","doi":"10.1016/j.mssp.2025.110374","DOIUrl":"10.1016/j.mssp.2025.110374","url":null,"abstract":"<div><div>Tin monosulfide (SnS) is a promising binary semiconductor with significant potential for optical and electrochemical device applications. This research entailed the synthesis of manganese-doped tin sulfide nanoparticles via a co-precipitation technique. The structural, morphological, optical, and electrochemical properties were thoroughly analyzed using powder X-ray diffraction (PXRD), field emission scanning electron microscopy (FESEM), UV–visible spectroscopy, Fourier-transform infrared (FTIR) spectroscopy, Raman spectroscopy, photoluminescence (PL) analysis, cyclic voltammetry (CV), and electrochemical impedance spectroscopy (EIS). PXRD analysis confirmed the orthorhombic phase of SnS, with crystallite sizes ranging from 0.35 to 1.65 nm, as determined by the Debye–Scherrer equation. Optical investigations demonstrated an indirect band gap ranging from 1.230 eV to 1.290 eV with manganese doping. The photoluminescence spectra exhibited a significant emission peak at 725 nm. The Raman spectra demonstrated the presence of a secondary Sn<sub>2</sub>S<sub>3</sub> phase, as evidenced by the significant Ag vibrational modes at 225 cm<sup>−1</sup> and an additional peak at 307 cm<sup>−1</sup>. The successful incorporation of Mn into the SnS lattice was confirmed by EDX analysis, while FESEM images demonstrated uniformly distributed spherical nanoparticles. Electrochemical investigations revealed that the Mn-0.1 sample displayed enhanced specific capacitance relative to undoped SnS and other Mn concentrations. Nonetheless, EIS analysis demonstrated increased charge transfer resistance in the Mn-0.1 sample, signifying diminished ion diffusion. Conversely, other Mn-doped samples exhibited enhanced charge transfer characteristics. Manganese doping markedly improves the optical and electrochemical properties of SnS nanoparticles, rendering them appropriate for multifunctional optoelectronic applications.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"205 ","pages":"Article 110374"},"PeriodicalIF":4.6,"publicationDate":"2025-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145881144","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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