Pub Date : 2026-01-07DOI: 10.1016/j.mssp.2026.110411
Qibiao Yang , Zhihao Huang , Qingdong Zeng , Jian Cheng , Lie Chen , Deyuan Lou , Hui Wan , Qianliang Li , Dun Liu
A flexible ionic pressure sensor with composite microstructures was fabricated via a laser-assisted templating method. Through layer-by-layer femtosecond laser ablation of an ABS template, a high-quality ionic gel film with a hierarchical cooperative composite microstructure (HCCM) array was constructed. Theoretical analysis and finite element simulations revealed that the HCCM array enhances sensitivity through a hierarchical mechanical response mechanism while sustaining a broad sensing range. The sensor exhibits a sensitivity of 9480 kPa−1 within a wide pressure range of 182 kPa, along with a rapid response time of 50 ms, a detection limit as low as 46.06 Pa, and stable capacitance performance over 2400 loading/unloading cycles. Experimental results further demonstrated its potential for pulse monitoring, muscle activity recognition, and non-contact airflow detection. Its cost-effectiveness, stability, and outstanding performance provide a promising pathway for structural optimization and practical implementation of next-generation flexible electronic devices.
{"title":"Fabrication of laser-assisted hierarchical cooperative composite microstructured ionic pressure sensors","authors":"Qibiao Yang , Zhihao Huang , Qingdong Zeng , Jian Cheng , Lie Chen , Deyuan Lou , Hui Wan , Qianliang Li , Dun Liu","doi":"10.1016/j.mssp.2026.110411","DOIUrl":"10.1016/j.mssp.2026.110411","url":null,"abstract":"<div><div>A flexible ionic pressure sensor with composite microstructures was fabricated via a laser-assisted templating method. Through layer-by-layer femtosecond laser ablation of an ABS template, a high-quality ionic gel film with a hierarchical cooperative composite microstructure (HCCM) array was constructed. Theoretical analysis and finite element simulations revealed that the HCCM array enhances sensitivity through a hierarchical mechanical response mechanism while sustaining a broad sensing range. The sensor exhibits a sensitivity of 9480 kPa<sup>−1</sup> within a wide pressure range of 182 kPa, along with a rapid response time of 50 ms, a detection limit as low as 46.06 Pa, and stable capacitance performance over 2400 loading/unloading cycles. Experimental results further demonstrated its potential for pulse monitoring, muscle activity recognition, and non-contact airflow detection. Its cost-effectiveness, stability, and outstanding performance provide a promising pathway for structural optimization and practical implementation of next-generation flexible electronic devices.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"206 ","pages":"Article 110411"},"PeriodicalIF":4.6,"publicationDate":"2026-01-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145940936","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-01-07DOI: 10.1016/j.mssp.2025.110383
Izhar Sagheer , Muhammad Luqman , Muhammad Umar Salman , Shahid M. Ramay , Zaffar Iqbal , Shahid Atiq
The persistent magnetoelectric investigation of single–phase multiferroic BiFeO3 at room temperature continues to draw significant attention due to its potential in multifunctional device applications, particularly in logic–based memory storage systems. In this study, a series of triphasic nanocomposites with the nominal composition (1-x-y)BiFeO3+xBaTiO3+yCoFe2O4 with varying x and y were synthesized via a combined solution–gelation auto–ignition and mechanical grinding route. Structural analysis through X–ray diffraction analysis confirmed the formation of pure crystalline phases, while the field emission scanning electron microscopy revealed a granular and porous morphology with irregular particle distribution. Among all the compositions, the sample with (x, y) = (0.08, 0.12) demonstrated a moderate response to the applied electric field and delivered the highest polarization of ∼0.0015 μC/cm2 and an energy conversion efficiency of 70 % attributed to electric domains. The composition also exhibited a minimal reversal time of ∼0.16 ms, characterized by minimal leakage current and exhibited highest spontaneous magnetization ∼9.35 emu/g. Furthermore, the magnetoelectric coupling and stable write–read–erase–rewrite performance highlight the suitability of these nanocomposites for advanced non–volatile multistate memory storage devices.
{"title":"Triphasic BiFeO3–BaTiO3–CoFe2O4 nanocomposite architectures elucidating efficient magnetoelectric coupling and low–leakage non–volatile memory storage","authors":"Izhar Sagheer , Muhammad Luqman , Muhammad Umar Salman , Shahid M. Ramay , Zaffar Iqbal , Shahid Atiq","doi":"10.1016/j.mssp.2025.110383","DOIUrl":"10.1016/j.mssp.2025.110383","url":null,"abstract":"<div><div>The persistent magnetoelectric investigation of single–phase multiferroic BiFeO<sub>3</sub> at room temperature continues to draw significant attention due to its potential in multifunctional device applications, particularly in logic–based memory storage systems. In this study, a series of triphasic nanocomposites with the nominal composition (1-x-y)BiFeO<sub>3</sub>+xBaTiO<sub>3</sub>+yCoFe<sub>2</sub>O<sub>4</sub> with varying x and y were synthesized via a combined solution–gelation auto–ignition and mechanical grinding route. Structural analysis through X–ray diffraction analysis confirmed the formation of pure crystalline phases, while the field emission scanning electron microscopy revealed a granular and porous morphology with irregular particle distribution. Among all the compositions, the sample with (x, y) = (0.08, 0.12) demonstrated a moderate response to the applied electric field and delivered the highest polarization of ∼0.0015 μC/cm<sup>2</sup> and an energy conversion efficiency of 70 % attributed to electric domains. The composition also exhibited a minimal reversal time of ∼0.16 ms, characterized by minimal leakage current and exhibited highest spontaneous magnetization ∼9.35 emu/g. Furthermore, the magnetoelectric coupling and stable write–read–erase–rewrite performance highlight the suitability of these nanocomposites for advanced non–volatile multistate memory storage devices.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"206 ","pages":"Article 110383"},"PeriodicalIF":4.6,"publicationDate":"2026-01-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145940878","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-01-07DOI: 10.1016/j.mssp.2025.110402
Fedor Hrubišák , Milan Ťapajna , Fridrich Egyenes , Ondrej Pohorelec , Edmund Dobročka , Alica Rosová , Kristína Hušeková , Andrej Vincze , Pavol Noga , Tibor Izsák , Boris Hudec , Tomáš Ščepka , Filip Gucmann
Gallium oxide (Ga2O3) is a promising semiconductor material for high-power electronics; however, its low thermal conductivity is a challenge for the device performance and reliability. To address this issue, heteroepitaxial β-Ga2O3 thin films were grown on highly-thermally-conductive 4H-SiC substrates using liquid-injection MOCVD and subjected to H-containing annealing at different temperatures to enhance their conductivity. The MOSFET devices processed on Si-doped β-Ga2O3 films were annealed at identified optimal temperature of 550 °C, and showed output current of 0.8 mA/mm, ON/OFF current ratio of ∼106, and breakdown voltage of 150 V. Using structural, compositional, and electrical characterization of the films and devices, observed resistivity drop was attributed to H passivation of the compensating acceptor centers, possibly via formation of Ga-vacancy–hydrogen complexes. Low MOSFET output current was proposed to originate from nearest-neighbor hopping conduction with the activation energy of ∼141 meV. We propose the observed transport mechanism is a result of structural disorder introduced by O vacancies or Si-OH complexes. Further, another deeper donor with energy level of ∼69 meV was identified and assigned to Si atom occupying octahedrally-coordinated Ga site.
{"title":"The effect of hydrogen annealing on the electrical properties of β-Ga2O3/4H-SiC MOSFETs grown by liquid-injection MOCVD","authors":"Fedor Hrubišák , Milan Ťapajna , Fridrich Egyenes , Ondrej Pohorelec , Edmund Dobročka , Alica Rosová , Kristína Hušeková , Andrej Vincze , Pavol Noga , Tibor Izsák , Boris Hudec , Tomáš Ščepka , Filip Gucmann","doi":"10.1016/j.mssp.2025.110402","DOIUrl":"10.1016/j.mssp.2025.110402","url":null,"abstract":"<div><div>Gallium oxide (Ga<sub>2</sub>O<sub>3</sub>) is a promising semiconductor material for high-power electronics; however, its low thermal conductivity is a challenge for the device performance and reliability. To address this issue, heteroepitaxial β-Ga<sub>2</sub>O<sub>3</sub> thin films were grown on highly-thermally-conductive 4H-SiC substrates using liquid-injection MOCVD and subjected to H-containing annealing at different temperatures to enhance their conductivity. The MOSFET devices processed on Si-doped β-Ga<sub>2</sub>O<sub>3</sub> films were annealed at identified optimal temperature of 550 °C, and showed output current of 0.8 mA/mm, ON/OFF current ratio of ∼10<sup>6</sup>, and breakdown voltage of 150 V. Using structural, compositional, and electrical characterization of the films and devices, observed resistivity drop was attributed to H passivation of the compensating acceptor centers, possibly via formation of Ga-vacancy–hydrogen complexes. Low MOSFET output current was proposed to originate from nearest-neighbor hopping conduction with the activation energy of ∼141 meV. We propose the observed transport mechanism is a result of structural disorder introduced by O vacancies or Si-OH complexes. Further, another deeper donor with energy level of ∼69 meV was identified and assigned to Si atom occupying octahedrally-coordinated Ga site.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"206 ","pages":"Article 110402"},"PeriodicalIF":4.6,"publicationDate":"2026-01-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145940876","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-01-06DOI: 10.1016/j.mssp.2026.110406
Liudan Kong, Jiuyang Tang, Jiaying Cao, Yifei Chang, Qingchun Jon Zhang, Pan Liu
With the widespread application of SiC devices in electric vehicles, high-frequency power supplies, and industrial systems, their long-term reliability under dynamic switching stress has attracted increasing attention. This paper investigates the reliability of 1200 V SiC MOSFETs under Dynamic Reverse Bias (DRB) stress, analyzing the impact of structural design and dV/dt on device degradation and failure behavior. Four commercial devices with different gate and termination structures were tested under dV/dt gradients ranging from 25 to 100 V/ns for 1000 h. Firstly, the active region structure influence for device degradation under DRB was investigated. Planar gate and trench gate structures exhibited distinct degradation behaviors, as reflected by different evolutions of the transfer characteristics. Secondly, termination design also plays an important role. The single junction termination extension (JTE) termination failed catastrophically under high-dV/dt. Further failure analysis and TCAD simulations revealed that the electric-field crowding caused localized breakdown. It is found that deep p-type injection or the improved termination with field limiting ring (FLR) added outside the JTE could effectively extend the depletion region, reduce field concentration, thus improving the dynamic robustness. It is concluded that a uniform potential distribution in the termination is essential to suppress local field enhancement and ensure reliable high-dV/dt operation in high-voltage SiC MOSFETs.
随着SiC器件在电动汽车、高频电源和工业系统中的广泛应用，其在动态开关应力下的长期可靠性越来越受到人们的关注。本文研究了1200v SiC mosfet在动态反向偏置（DRB）应力下的可靠性，分析了结构设计和dV/dt对器件退化和失效行为的影响。在25 ~ 100 V/ns的dV/dt梯度下，对4种具有不同栅极和端部结构的商用器件进行了1000 h的测试。首先，研究了有源区结构对器件在DRB下退化的影响。平面栅极和沟槽栅极结构表现出不同的退化行为，这反映在其传递特性的不同演化上。其次，终端设计也起着重要的作用。在高dv /dt条件下，单结端接延伸（JTE）端接失效。进一步的故障分析和TCAD仿真表明，电场拥挤导致局部击穿。研究发现，深p型注入或在JTE外添加场限制环（FLR）的改进端接可以有效地扩大耗尽区，降低场浓度，从而提高动态鲁棒性。结果表明，在高压SiC mosfet中，端部均匀的电位分布对于抑制局部场增强和确保可靠的高dv /dt工作至关重要。
{"title":"DV/dt-Induced degradation and failure mechanisms in 1200 V SiC MOSFETs under dynamic reverse bias stress","authors":"Liudan Kong, Jiuyang Tang, Jiaying Cao, Yifei Chang, Qingchun Jon Zhang, Pan Liu","doi":"10.1016/j.mssp.2026.110406","DOIUrl":"10.1016/j.mssp.2026.110406","url":null,"abstract":"<div><div>With the widespread application of SiC devices in electric vehicles, high-frequency power supplies, and industrial systems, their long-term reliability under dynamic switching stress has attracted increasing attention. This paper investigates the reliability of 1200 V SiC MOSFETs under Dynamic Reverse Bias (DRB) stress, analyzing the impact of structural design and <em>dV/dt</em> on device degradation and failure behavior. Four commercial devices with different gate and termination structures were tested under <em>dV/dt</em> gradients ranging from 25 to 100 V/ns for 1000 h. Firstly, the active region structure influence for device degradation under DRB was investigated. Planar gate and trench gate structures exhibited distinct degradation behaviors, as reflected by different evolutions of the transfer characteristics. Secondly, termination design also plays an important role. The single junction termination extension (JTE) termination failed catastrophically under high-<em>dV/dt</em>. Further failure analysis and TCAD simulations revealed that the electric-field crowding caused localized breakdown. It is found that deep p-type injection or the improved termination with field limiting ring (FLR) added outside the JTE could effectively extend the depletion region, reduce field concentration, thus improving the dynamic robustness. It is concluded that a uniform potential distribution in the termination is essential to suppress local field enhancement and ensure reliable high-<em>dV/dt</em> operation in high-voltage SiC MOSFETs.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"206 ","pages":"Article 110406"},"PeriodicalIF":4.6,"publicationDate":"2026-01-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145940871","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-01-06DOI: 10.1016/j.mssp.2026.110422
Shixin Li , Zilin Ye , Zhuangzhi Li , Shaochang Wang , Chunhui Zhu
High-quality In4Se3 single crystals were synthesized using the Bridgman method. Multilayer In4Se3 nanosheets exfoliated from the crystals showed an experimental bandgap of approximately 1.17 eV. A mixed-dimensional van der Waals heterostructure was constructed by integrating two-dimensional In4Se3 nanosheets with a three-dimensional silicon substrate. The resulting In4Se3 nanosheet-Si heterojunction device exhibited a rectification ratio up to 1029 at room temperature. Temperature-dependent electrical measurements revealed that the carrier transport is dominated by barrier inhomogeneity. Under 650 nm illumination, the device showed a pronounced photoresponse, with a responsivity of 23.1 A/W, a photoswitching ratio of 2470, and a specific detectivity of 1.61 × 1012 Jones. The external quantum efficiency reached 4.42 × 103 %, accompanied by a rise time of 120 μs and a fall time of 360 μs.
{"title":"Investigation on electrical and optoelectronic properties of In4Se3 Nanosheet-Si mixed-dimensional heterojunction devices","authors":"Shixin Li , Zilin Ye , Zhuangzhi Li , Shaochang Wang , Chunhui Zhu","doi":"10.1016/j.mssp.2026.110422","DOIUrl":"10.1016/j.mssp.2026.110422","url":null,"abstract":"<div><div>High-quality In<sub>4</sub>Se<sub>3</sub> single crystals were synthesized using the Bridgman method. Multilayer In<sub>4</sub>Se<sub>3</sub> nanosheets exfoliated from the crystals showed an experimental bandgap of approximately 1.17 eV. A mixed-dimensional van der Waals heterostructure was constructed by integrating two-dimensional In<sub>4</sub>Se<sub>3</sub> nanosheets with a three-dimensional silicon substrate. The resulting In<sub>4</sub>Se<sub>3</sub> nanosheet-Si heterojunction device exhibited a rectification ratio up to 1029 at room temperature. Temperature-dependent electrical measurements revealed that the carrier transport is dominated by barrier inhomogeneity. Under 650 nm illumination, the device showed a pronounced photoresponse, with a responsivity of 23.1 A/W, a photoswitching ratio of 2470, and a specific detectivity of 1.61 × 10<sup>12</sup> Jones. The external quantum efficiency reached 4.42 × 10<sup>3</sup> %, accompanied by a rise time of 120 μs and a fall time of 360 μs.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"206 ","pages":"Article 110422"},"PeriodicalIF":4.6,"publicationDate":"2026-01-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145940870","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-01-06DOI: 10.1016/j.mssp.2025.110403
Gang Liu , Baonan Jia , Zhengjun Wang , Shengjiao Qian , Bohao Cui , Yuxi Bi , Chao Dong , Changcheng Chen , Pengfei Lu
Double perovskites have attracted significant attention due to their ability to modulate photovoltaic properties and exhibit higher stability through elemental control. However, most double perovskites face the challenges of large band gap ranges and indirect band gaps. To enhance the performance of fully inorganic double perovskites and reduce the use of lead, this study employs a combination of density functional theory (DFT) and the SISSO algorithm in machine learning to investigate the structural, stability, electronic, and optical properties of lead-free halide double perovskite Cs2B'AgX6 (B' = Ir, Rh; X = Cl, Br, and I). The results of thermodynamic stability and electronic properties show that these double perovskites have higher stability than lead-based perovskites and exhibit an appropriate band gap range for optoelectronic applications. The band gap decreases from 0.89 eV to 1.6 eV as halogen elements are substituted from Cl to I. Moreover, the double perovskite demonstrates strong light absorption. These results suggest that Cs2B'AgX6 (B' = Ir, Rh; X = Cl, Br, and I) double perovskites hold great potential in optoelectronic applications.
双钙钛矿由于其能够通过元素控制调制光伏特性并表现出更高的稳定性而引起了人们的极大关注。然而，大多数双钙钛矿都面临着大带隙范围和间接带隙的挑战。为了提高全无机双钙钛矿的性能，减少铅的使用，本研究结合密度泛函理论（DFT）和机器学习中的SISSO算法，研究了无铅卤化物双钙钛矿Cs2B' agx6 （B' = Ir, Rh; X = Cl, Br, and I）的结构、稳定性、电子和光学性质。热力学稳定性和电子性能的结果表明，这些双钙钛矿比铅基钙钛矿具有更高的稳定性，并且具有合适的光电应用带隙范围。当卤素元素由Cl取代为i时，带隙从0.89 eV减小到1.6 eV，双钙钛矿具有较强的光吸收能力。这些结果表明Cs2B' agx6 （B' = Ir, Rh; X = Cl, Br, and I）双钙钛矿在光电应用中具有很大的潜力。
{"title":"First-principles study of lead-free halide double perovskite Cs2B'AgX6 (B'=Ir, Rh, X = Cl, Br, and I) as potential material in optoelectronic devices with SISSO-based feature selection","authors":"Gang Liu , Baonan Jia , Zhengjun Wang , Shengjiao Qian , Bohao Cui , Yuxi Bi , Chao Dong , Changcheng Chen , Pengfei Lu","doi":"10.1016/j.mssp.2025.110403","DOIUrl":"10.1016/j.mssp.2025.110403","url":null,"abstract":"<div><div>Double perovskites have attracted significant attention due to their ability to modulate photovoltaic properties and exhibit higher stability through elemental control. However, most double perovskites face the challenges of large band gap ranges and indirect band gaps. To enhance the performance of fully inorganic double perovskites and reduce the use of lead, this study employs a combination of density functional theory (DFT) and the SISSO algorithm in machine learning to investigate the structural, stability, electronic, and optical properties of lead-free halide double perovskite Cs<sub>2</sub>B'AgX<sub>6</sub> (B' = Ir, Rh; X = Cl, Br, and I). The results of thermodynamic stability and electronic properties show that these double perovskites have higher stability than lead-based perovskites and exhibit an appropriate band gap range for optoelectronic applications. The band gap decreases from 0.89 eV to 1.6 eV as halogen elements are substituted from Cl to I. Moreover, the double perovskite demonstrates strong light absorption. These results suggest that Cs<sub>2</sub>B'AgX<sub>6</sub> (B' = Ir, Rh; X = Cl, Br, and I) double perovskites hold great potential in optoelectronic applications.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"206 ","pages":"Article 110403"},"PeriodicalIF":4.6,"publicationDate":"2026-01-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145940874","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-01-06DOI: 10.1016/j.mssp.2025.110390
Tesalonika Siregar , Yunasfi , Mashadi , Wisnu Ari Adi , Budhy Kurniawan , Jan Setiawan
Phase purity and magnetic properties play a crucial role in determining the effectiveness of electromagnetic (EM) wave absorption. This study investigates the influence of milling duration and sintering temperature on the crystal structure, magnetic behavior, and microwave absorption performance of the perovskite material Co0.75Ni0.25Ti0.975Y0.025O3 (CNTYO), synthesized via the solid-state reaction assisted by high-energy milling. X-ray diffraction results confirmed the formation of a single-phase perovskite structure after ≥5 h of milling. The 7 h-milled sample exhibited the best absorption performance, with a minimum reflection loss (|RLmax|) of −21.94 dB at 6.17 GHz for a thickness of 1.5 mm. Prolonged milling enhanced microstructural homogeneity and interfacial polarization, improving impedance matching between the material and free space. Sintering at higher temperatures (1100–1200 °C) induced the formation of a Ti2Y2O7 secondary phase, which reduced defect density and magnetic dielectric losses, thereby weakening the overall absorption performance. The material exhibits low-magnetization magnetic behavior dominated by weak ferromagnetic or paramagnetic-like contributions. These findings emphasize that precise control of milling and sintering parameters is essential for tailoring phase purity, magnetic properties, and electromagnetic response, establishing CNTYO as a lightweight and thermally stable candidate for advanced radar-absorbing material (RAM) applications.
{"title":"Tuning phase purity, magnetic softness, and microwave absorption in Co0.75Ni0.25Ti0.975Y0.025O3 via controlled milling and sintering","authors":"Tesalonika Siregar , Yunasfi , Mashadi , Wisnu Ari Adi , Budhy Kurniawan , Jan Setiawan","doi":"10.1016/j.mssp.2025.110390","DOIUrl":"10.1016/j.mssp.2025.110390","url":null,"abstract":"<div><div>Phase purity and magnetic properties play a crucial role in determining the effectiveness of electromagnetic (EM) wave absorption. This study investigates the influence of milling duration and sintering temperature on the crystal structure, magnetic behavior, and microwave absorption performance of the perovskite material Co<sub>0</sub>.<sub>75</sub>Ni<sub>0</sub>.<sub>25</sub>Ti<sub>0</sub>.<sub>975</sub>Y<sub>0</sub>.<sub>025</sub>O<sub>3</sub> (CNTYO), synthesized via the solid-state reaction assisted by high-energy milling. X-ray diffraction results confirmed the formation of a single-phase perovskite structure after ≥5 h of milling. The 7 h-milled sample exhibited the best absorption performance, with a minimum reflection loss (|RL<sub>max</sub>|) of −21.94 dB at 6.17 GHz for a thickness of 1.5 mm. Prolonged milling enhanced microstructural homogeneity and interfacial polarization, improving impedance matching between the material and free space. Sintering at higher temperatures (1100–1200 °C) induced the formation of a Ti<sub>2</sub>Y<sub>2</sub>O<sub>7</sub> secondary phase, which reduced defect density and magnetic dielectric losses, thereby weakening the overall absorption performance. The material exhibits low-magnetization magnetic behavior dominated by weak ferromagnetic or paramagnetic-like contributions. These findings emphasize that precise control of milling and sintering parameters is essential for tailoring phase purity, magnetic properties, and electromagnetic response, establishing CNTYO as a lightweight and thermally stable candidate for advanced radar-absorbing material (RAM) applications.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"206 ","pages":"Article 110390"},"PeriodicalIF":4.6,"publicationDate":"2026-01-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145940941","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-01-06DOI: 10.1016/j.mssp.2026.110418
Junxiong Chai , Zhezhe Cong , Xiaoli Lu
Wide bandgap semiconductors have gained significant attention in RF device applications owing to their superior carrier mobility. To enhance the carrier mobility within the channel, researchers have employed the deposition of gate dielectrics to modulate the internal stress of GaN. Nevertheless, this dielectric deposition process inevitably introduces defects, which can detrimentally impact device performance. Our group previously demonstrated that the regulation of ferroelectric polarization effectively mitigates interface states. In this paper, the interplay between GaN internal stress and carrier mobility under the influence of nanochannel ferroelastic stress modulation has been explored. The output current and transconductance exhibited substantial enhancements, reaching 1026 mA/mm and 259 mS/mm, respectively. After the 680 nm channel formation, the compressive stress was reduced to 0.37 GPa, with carrier mobility increasing to 2610 cm2/V·s (110 % of the initial value). The reduction of compressive stress improves carrier mobility to a certain extent. This research provides a straightforward and efficacious approach to investigating the factors through which ferroelastic modulation influences the internal stress in GaN.
{"title":"Giant ferroelastic stress modulation in AlGaN/GaN heterostructure and its transport mechanism","authors":"Junxiong Chai , Zhezhe Cong , Xiaoli Lu","doi":"10.1016/j.mssp.2026.110418","DOIUrl":"10.1016/j.mssp.2026.110418","url":null,"abstract":"<div><div>Wide bandgap semiconductors have gained significant attention in RF device applications owing to their superior carrier mobility. To enhance the carrier mobility within the channel, researchers have employed the deposition of gate dielectrics to modulate the internal stress of GaN. Nevertheless, this dielectric deposition process inevitably introduces defects, which can detrimentally impact device performance. Our group previously demonstrated that the regulation of ferroelectric polarization effectively mitigates interface states. In this paper, the interplay between GaN internal stress and carrier mobility under the influence of nanochannel ferroelastic stress modulation has been explored. The output current and transconductance exhibited substantial enhancements, reaching 1026 mA/mm and 259 mS/mm, respectively. After the 680 nm channel formation, the compressive stress was reduced to 0.37 GPa, with carrier mobility increasing to 2610 cm<sup>2</sup>/V·s (110 % of the initial value). The reduction of compressive stress improves carrier mobility to a certain extent. This research provides a straightforward and efficacious approach to investigating the factors through which ferroelastic modulation influences the internal stress in GaN.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"206 ","pages":"Article 110418"},"PeriodicalIF":4.6,"publicationDate":"2026-01-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145940875","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-01-05DOI: 10.1016/j.mssp.2025.110385
Justyna Wierzbicka , Wojciech Hendzelek , Maciej Kamiński , Jarosław Tarenko , Joanna Jankowska-Śliwińska , Aleksandra Wójcicka , Oskar Sadowski , Aneta Gołębiowska , Krzysztof Urbanowski , Veronica Gao Zhan , Anna Szerling , Andrzej Taube
The usage of p-NiO-based gate architecture can be beneficial over conventionally used p-GaN gate structure in the construction of normally-off GaN-based high electron mobility transistors, due to simpler, cost-effective and low-thermal budget fabrication process flow. Here in this work we report normally-off recessed p-NiO gate GaN-based HEMTs fabricated on "buffer-free" AlGaN/GaN heterostructure on 4H-SiC substrate. By using 17 nm recess p-NiO gate structure, appropriate post-deposition annealing and passivation scheme high positive threshold +0.8V (+0.2 V), high drain output current over 0.7 A/mm and low subthreshold swing 80 mV/dec and on-state resistance 10 Ωmm were obtained simultaneously. Thanks to the use of a high-quality heterostructure on a semi-insulating substrate and the absence of substrate leakage current, normally-off devices with high breakdown voltage values of up to 2 kV for a gate-drain distance of 20 μm were achieved, which corresponds to an average breakdown field value of 1 MV/cm, without the use of additional field-plate termination structures.
{"title":"2 kV normally-off recessed p-NiO gate GaN-based HEMTs fabricated using “buffer-free” AlGaN/GaN heterostructures on SiC substrates","authors":"Justyna Wierzbicka , Wojciech Hendzelek , Maciej Kamiński , Jarosław Tarenko , Joanna Jankowska-Śliwińska , Aleksandra Wójcicka , Oskar Sadowski , Aneta Gołębiowska , Krzysztof Urbanowski , Veronica Gao Zhan , Anna Szerling , Andrzej Taube","doi":"10.1016/j.mssp.2025.110385","DOIUrl":"10.1016/j.mssp.2025.110385","url":null,"abstract":"<div><div>The usage of p-NiO-based gate architecture can be beneficial over conventionally used p-GaN gate structure in the construction of normally-off GaN-based high electron mobility transistors, due to simpler, cost-effective and low-thermal budget fabrication process flow. Here in this work we report normally-off recessed p-NiO gate GaN-based HEMTs fabricated on \"buffer-free\" AlGaN/GaN heterostructure on 4H-SiC substrate. By using 17 nm recess p-NiO gate structure, appropriate post-deposition annealing and passivation scheme high positive threshold +0.8V (+0.2 V), high drain output current over 0.7 A/mm and low subthreshold swing 80 mV/dec and on-state resistance 10 Ωmm were obtained simultaneously. Thanks to the use of a high-quality heterostructure on a semi-insulating substrate and the absence of substrate leakage current, normally-off devices with high breakdown voltage values of up to 2 kV for a gate-drain distance of 20 μm were achieved, which corresponds to an average breakdown field value of 1 MV/cm, without the use of additional field-plate termination structures.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"206 ","pages":"Article 110385"},"PeriodicalIF":4.6,"publicationDate":"2026-01-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145940940","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-01-05DOI: 10.1016/j.mssp.2025.110391
Mohini Sawane , Mahanth Prasad , Murugan S. , Velmurugan K.
The piezoelectric MEMS sensor's market is experiencing rapid expansion, driven by self-powered operation, compact form factors, and scalable manufacturing. A novel fabrication technique using minimized fabrication processes and clean room resources were developed to produce cost-effective, compact and lightweight sensors. Microtunnel and through-hole cavity are etched into a silicon substrate and sealed with glass via anodic bonding. A PVDF-based diaphragm is bonded at the front side using vacuum-assisted mounting. Designed and developed PVDF based sensor variants (ST501–ST503 and ST1201–ST1203) were benchmarked against a Brüel & Kjær 4944A reference microphone using a B&K 4292-L loudspeaker and Noise Generator Type 1405. Their output closely matched the calibrated reference microphone tested for 1/3rd octave frequency range from 125Hz to 2 kHz, indicating high accuracy and reproducibility. Overall, the fabricated sensors exhibit reliable SPL measurement performance comparable to industry-standard microphone.
压电MEMS传感器的市场正在经历快速扩张，受自供电操作，紧凑的外形因素和可扩展的制造驱动。利用最小化的制造工艺和洁净室资源，开发了一种新型的制造技术，以生产成本低、结构紧凑、重量轻的传感器。微隧道和通孔腔蚀刻在硅衬底上，并通过阳极键合用玻璃密封。使用真空辅助安装的pvdf基隔膜粘合在前部。设计和开发的基于PVDF的传感器变体（ST501-ST503和ST1201-ST1203）与使用B&；K 4292-L扬声器和1405型噪声发生器的br el &；K ær 4944A参考麦克风进行基准测试。它们的输出与校准的参考麦克风在1/3倍频频率范围内（125Hz至2khz）进行测试，显示出高精度和再现性。总体而言，制造的传感器具有可靠的声压级测量性能，可与行业标准麦克风相媲美。
{"title":"Development of self-powered PVDF based MEMS sensors for sound pressure level measurements","authors":"Mohini Sawane , Mahanth Prasad , Murugan S. , Velmurugan K.","doi":"10.1016/j.mssp.2025.110391","DOIUrl":"10.1016/j.mssp.2025.110391","url":null,"abstract":"<div><div>The piezoelectric MEMS sensor's market is experiencing rapid expansion, driven by self-powered operation, compact form factors, and scalable manufacturing. A novel fabrication technique using minimized fabrication processes and clean room resources were developed to produce cost-effective, compact and lightweight sensors. Microtunnel and through-hole cavity are etched into a silicon substrate and sealed with glass via anodic bonding. A PVDF-based diaphragm is bonded at the front side using vacuum-assisted mounting. Designed and developed PVDF based sensor variants (ST501–ST503 and ST1201–ST1203) were benchmarked against a Brüel & Kjær 4944A reference microphone using a B&K 4292-L loudspeaker and Noise Generator Type 1405. Their output closely matched the calibrated reference microphone tested for 1/3rd octave frequency range from 125Hz to 2 kHz, indicating high accuracy and reproducibility. Overall, the fabricated sensors exhibit reliable SPL measurement performance comparable to industry-standard microphone.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"206 ","pages":"Article 110391"},"PeriodicalIF":4.6,"publicationDate":"2026-01-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145940942","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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