Materials Science in Semiconductor Processing最新文献

{"title":"Enhancing Seebeck coefficient through magnetic and non-magnetic dual doping in CuCrO2 crystallites: A study on cationic influence","authors":"Jamshina Sanam P.K.,&nbsp;P.P. Pradyumnan","doi":"10.1016/j.mssp.2024.109058","DOIUrl":"10.1016/j.mssp.2024.109058","url":null,"abstract":"<div><div>The manipulation of thermoelectric properties through doping strategies offers a promising route to optimize material performance. Here we explore the effects of magnetic and non-magnetic dual cation doping (Zn and Ni) on the Seebeck coefficient of CuCrO<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span> crystallites. Examining how lattice structure changes with increasing dopant concentrations provides deeper insights, aiding in optimizing superior thermoelectric materials. XPS investigation explores and substantiates the alterations in lattice sites resulting from the variation of two dopants Zn and Ni. The lattice distortion favors the superexchange interaction mediated by the ferromagnetic phase and the upsurge in carriers, the plateau in the MR graph, and the moderated reduction after the steep decline of Seebeck coefficients after 450 K serve as indicators of the magnetic phase transition and structural modulation. Our findings reveal that magnetic dopants introduce spin-related effects, which modify carrier concentration and scattering processes, while non-magnetic dopants mainly affect the electronic band structure. It is intriguing that the sample exhibiting higher magnetic remanence (<span><math><msub><mrow><mi>M</mi></mrow><mrow><mi>r</mi></mrow></msub></math></span>) demonstrates the lowest electrical conductivity during the ferromagnetic phase, yet displays higher conductivity during the paramagnetic phase. In this context, achieving the right concentration is pivotal, and the sample doped with 0.4 wt% showcases enhanced conductivity of 2823 S/m and Seebeck coefficient of 421 <span><math><mrow><mi>μ</mi><mi>V/K</mi></mrow></math></span>, culminating in an impressive power factor of 456 <span><math><mrow><mi>μ</mi><msup><mrow><mi>W/mK</mi></mrow><mrow><mn>2</mn></mrow></msup></mrow></math></span> and ZT of 0.135 at 973 K.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"186 ","pages":"Article 109058"},"PeriodicalIF":4.2,"publicationDate":"2024-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142650623","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"High stability Janus structures of two dimensional Fe3GeTe2 monolayer by first-principles investigations","authors":"Nguyen T. Hiep ,&nbsp;Dinh T. Khan ,&nbsp;Le T.P. Thao ,&nbsp;Cuong Q. Nguyen ,&nbsp;Bui D. Hoi ,&nbsp;Huynh V. Phuc ,&nbsp;Nguyen N. Hieu","doi":"10.1016/j.mssp.2024.109055","DOIUrl":"10.1016/j.mssp.2024.109055","url":null,"abstract":"&lt;div&gt;&lt;div&gt;In line with ongoing efforts on discovering new materials for the utilization in advanced nanotechnologies, in the present work, based on the original Fe&lt;span&gt;&lt;math&gt;&lt;msub&gt;&lt;mrow&gt;&lt;/mrow&gt;&lt;mrow&gt;&lt;mn&gt;3&lt;/mn&gt;&lt;/mrow&gt;&lt;/msub&gt;&lt;/math&gt;&lt;/span&gt;GeTe&lt;span&gt;&lt;math&gt;&lt;msub&gt;&lt;mrow&gt;&lt;/mrow&gt;&lt;mrow&gt;&lt;mn&gt;2&lt;/mn&gt;&lt;/mrow&gt;&lt;/msub&gt;&lt;/math&gt;&lt;/span&gt; material, two-dimensional Janus Fe&lt;span&gt;&lt;math&gt;&lt;msub&gt;&lt;mrow&gt;&lt;/mrow&gt;&lt;mrow&gt;&lt;mn&gt;3&lt;/mn&gt;&lt;/mrow&gt;&lt;/msub&gt;&lt;/math&gt;&lt;/span&gt;Ge&lt;span&gt;&lt;math&gt;&lt;mi&gt;X&lt;/mi&gt;&lt;/math&gt;&lt;/span&gt;Te (&lt;span&gt;&lt;math&gt;&lt;mrow&gt;&lt;mi&gt;X&lt;/mi&gt;&lt;mo&gt;=&lt;/mo&gt;&lt;/mrow&gt;&lt;/math&gt;&lt;/span&gt; S and Se) monolayers are constructed and analyzed by using first-principles calculations. All three monolayers of Fe&lt;span&gt;&lt;math&gt;&lt;msub&gt;&lt;mrow&gt;&lt;/mrow&gt;&lt;mrow&gt;&lt;mn&gt;3&lt;/mn&gt;&lt;/mrow&gt;&lt;/msub&gt;&lt;/math&gt;&lt;/span&gt;GeTe&lt;span&gt;&lt;math&gt;&lt;msub&gt;&lt;mrow&gt;&lt;/mrow&gt;&lt;mrow&gt;&lt;mn&gt;2&lt;/mn&gt;&lt;/mrow&gt;&lt;/msub&gt;&lt;/math&gt;&lt;/span&gt;, Fe&lt;span&gt;&lt;math&gt;&lt;msub&gt;&lt;mrow&gt;&lt;/mrow&gt;&lt;mrow&gt;&lt;mn&gt;3&lt;/mn&gt;&lt;/mrow&gt;&lt;/msub&gt;&lt;/math&gt;&lt;/span&gt;GeSTe, and Fe&lt;span&gt;&lt;math&gt;&lt;msub&gt;&lt;mrow&gt;&lt;/mrow&gt;&lt;mrow&gt;&lt;mn&gt;3&lt;/mn&gt;&lt;/mrow&gt;&lt;/msub&gt;&lt;/math&gt;&lt;/span&gt;GeSeTe exhibit hexagonal structures with good dynamical stability. No negative frequency is observed in the phonon dispersion spectra. During the &lt;em&gt;ab initio&lt;/em&gt; molecular dynamics simulation at room temperature, the Fe&lt;span&gt;&lt;math&gt;&lt;msub&gt;&lt;mrow&gt;&lt;/mrow&gt;&lt;mrow&gt;&lt;mn&gt;3&lt;/mn&gt;&lt;/mrow&gt;&lt;/msub&gt;&lt;/math&gt;&lt;/span&gt;Ge&lt;span&gt;&lt;math&gt;&lt;mi&gt;X&lt;/mi&gt;&lt;/math&gt;&lt;/span&gt;Te structures are predicted to be thermally stable without any reconstruction/fracture, suggesting the high thermal stability of these systems. In addition, the Fe&lt;span&gt;&lt;math&gt;&lt;msub&gt;&lt;mrow&gt;&lt;/mrow&gt;&lt;mrow&gt;&lt;mn&gt;3&lt;/mn&gt;&lt;/mrow&gt;&lt;/msub&gt;&lt;/math&gt;&lt;/span&gt;Ge&lt;span&gt;&lt;math&gt;&lt;mi&gt;X&lt;/mi&gt;&lt;/math&gt;&lt;/span&gt;Te monolayers show high negative cohesive energy of about &lt;span&gt;&lt;math&gt;&lt;mrow&gt;&lt;mo&gt;−&lt;/mo&gt;&lt;mn&gt;5&lt;/mn&gt;&lt;/mrow&gt;&lt;/math&gt;&lt;/span&gt; eV/atom and the obtained elastic constants satisfy the Born and Huang condition. Their Young’s modulus and Poisson’s ratio exhibit isotropic elastic behaviors due to the isotropic structures. These results confirm that the Fe&lt;span&gt;&lt;math&gt;&lt;msub&gt;&lt;mrow&gt;&lt;/mrow&gt;&lt;mrow&gt;&lt;mn&gt;3&lt;/mn&gt;&lt;/mrow&gt;&lt;/msub&gt;&lt;/math&gt;&lt;/span&gt;Ge&lt;span&gt;&lt;math&gt;&lt;mi&gt;X&lt;/mi&gt;&lt;/math&gt;&lt;/span&gt;Te monolayers are energetically and mechanically stable for experimental synthesis. Especially, the electronic properties of our studied structures are explored for applications in electronic devices. The Fe&lt;span&gt;&lt;math&gt;&lt;msub&gt;&lt;mrow&gt;&lt;/mrow&gt;&lt;mrow&gt;&lt;mn&gt;3&lt;/mn&gt;&lt;/mrow&gt;&lt;/msub&gt;&lt;/math&gt;&lt;/span&gt;Ge&lt;span&gt;&lt;math&gt;&lt;mi&gt;X&lt;/mi&gt;&lt;/math&gt;&lt;/span&gt;Te monolayers show a metallic nature for both the spin-up and spin-down cases. The projected density of states reveals that the Fe&lt;span&gt;&lt;math&gt;&lt;msub&gt;&lt;mrow&gt;&lt;/mrow&gt;&lt;mrow&gt;&lt;mn&gt;3&lt;/mn&gt;&lt;/mrow&gt;&lt;/msub&gt;&lt;/math&gt;&lt;/span&gt;GeTe&lt;span&gt;&lt;math&gt;&lt;msub&gt;&lt;mrow&gt;&lt;/mrow&gt;&lt;mrow&gt;&lt;mn&gt;2&lt;/mn&gt;&lt;/mrow&gt;&lt;/msub&gt;&lt;/math&gt;&lt;/span&gt;, Fe&lt;span&gt;&lt;math&gt;&lt;msub&gt;&lt;mrow&gt;&lt;/mrow&gt;&lt;mrow&gt;&lt;mn&gt;3&lt;/mn&gt;&lt;/mrow&gt;&lt;/msub&gt;&lt;/math&gt;&lt;/span&gt;GeSTe, and Fe&lt;span&gt;&lt;math&gt;&lt;msub&gt;&lt;mrow&gt;&lt;/mrow&gt;&lt;mrow&gt;&lt;mn&gt;3&lt;/mn&gt;&lt;/mrow&gt;&lt;/msub&gt;&lt;/math&gt;&lt;/span&gt;GeSeTe are magnetic materials due to their different spin-up and-down configurations. The results of our study can provide more information for the Janus Fe&lt;span&gt;&lt;math&gt;&lt;msub&gt;&lt;mrow&gt;&lt;/mrow&gt;&lt;mrow&gt;&lt;mn","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"186 ","pages":"Article 109055"},"PeriodicalIF":4.2,"publicationDate":"2024-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142650631","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Prediction of Janus XYSTe (X=Li, Na; Y=Al, Ga, In) monolayers with tunable Rashba effect for spintronic devices","authors":"Somayeh Gholami Rudi ,&nbsp;Samaneh Soleimani-Amiri ,&nbsp;Nayereh Ghobadi","doi":"10.1016/j.mssp.2024.109087","DOIUrl":"10.1016/j.mssp.2024.109087","url":null,"abstract":"<div><div>Janus two-dimensional materials with sizable and tunable Rashba spin-splitting are of utmost importance in the next-generation spintronic devices. In this paper, First-principles calculations are performed to predict a new group of Janus monolayers XYSTe (X = Li, Na; Y=Al, Ga, In) with inherent structural asymmetry. Phonon spectral calculations, ab initio molecular dynamic simulations, and cohesive energies demonstrate that all the proposed structures are stable. XYSTe monolayers are found to be semiconductors with large bandgaps ranging from 1.75 to 3.48 eV, from HSE06 functional calculations. Broken mirror symmetry in the proposed Janus structures induces an out-of-plane intrinsic electric field which is confirmed by electrostatic potential and Bader charge population analysis. The electric field results in a distinct Rashba spin-splitting at the high symmetry Γ-point of the lowest conduction band of all XYSTe monolayers. The Rashba coefficients of the proposed monolayers are in the range of 0.94–1.40 eVȦ rendering them as auspicious candidates for spintronic devices. It is also found that the bandgap and Rashba effect can be tuned by employing biaxial strain and the Rashba coefficient can be up to 1.56 eVȦ in NaGaSTe monolayer. Finally, the tunability of Rashba splitting with an external electric field is demonstrated. Our results show that the Janus XYSTe monolayers are potential materials for two-dimensional spintronic devices.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"186 ","pages":"Article 109087"},"PeriodicalIF":4.2,"publicationDate":"2024-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142650625","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Si/Graphene exotic type IMPATT (p+-n-n+-) Opto-sensor: First experimental observation","authors":"Sulagna Chatterjee ,&nbsp;Madhumita Chakravarti ,&nbsp;Moumita Mukherjee","doi":"10.1016/j.mssp.2024.109070","DOIUrl":"10.1016/j.mssp.2024.109070","url":null,"abstract":"<div><div>On-chip DC characterization study has been performed on exotic-type Si/Graphene Avalanche Transit Time (ATT) device for ultra-fast optical-sensing. The performance of the newly proposed device has further been compared with conventional narrow and wide band gap semiconductor based p⁺-n-n⁺ devices. It has been observed that at X-band frequencies, the new class of device outperforms Si/SiC/GaN and their heterostructure counterparts, in terms of better RF power density (∼<span><math><mrow><mn>1</mn><mspace></mspace><mi>W</mi></mrow></math></span> and <span><math><mrow><mn>8.1</mn><mspace></mspace><mi>W</mi></mrow></math></span>), RF conversion efficiency (6 % and 18 %) and much better quantum efficiency (93 % and 91.5 %), respectively for device active-region-widths of 15 μm and 25 μm. Standard Chemical Vapor Deposition (CVD) route has been followed to fabricate the new class of device. Further, the authors have studied the applicability of the newly developed devices for optical-sensing. This comprehensive study reveals that the Device Under Test (DUT) exhibits photo responsivity at least 10 times better than its counter parts. Thus, the study will be useful for future applications in single-photon-detection for defence and civil sectors.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"186 ","pages":"Article 109070"},"PeriodicalIF":4.2,"publicationDate":"2024-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142650626","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Sintering and optimization of copper nanopaste-connected copper array conical microstructures","authors":"Hongliang Lyu ,&nbsp;Cong Wang ,&nbsp;Kai Li ,&nbsp;Xianshi Jia ,&nbsp;Jiahua He ,&nbsp;Dejin Yan ,&nbsp;Nai Lin ,&nbsp;Ji'an Duan","doi":"10.1016/j.mssp.2024.109081","DOIUrl":"10.1016/j.mssp.2024.109081","url":null,"abstract":"<div><div>With the advancement of 3D integration technology, the integration density and operational speed of circuits continue to increase. Consequently, there is a corresponding rise in the demand for interconnection reliability. However, traditional interconnection processes and materials are no longer able to meet the requirements for interconnection reliability. This study optimized the interconnection material by utilizing different ratios of organic compounds in nano-copper coating materials. Micro/nanostructures were processed using femtosecond laser and secondary thermal coating to enhance the interconnection process. Firstly, to ensure processing efficiency, we utilized femtosecond laser to create micro/nanostructures with increased surface contact area. Subsequently, varying molar ratios of ascorbic acid and benzimidazole were utilized in the preparation of copper (Cu) pastes to analyze their impact on the dispersion and sphericity of the copper nanoparticles and the shear strength of the interconnections. The ideal combination resulted in well-dispersed spherical copper nanoparticles, copper nano paste with an average shear strength of about 38 MPa was obtained. In addition, optimization was achieved through the femtosecond laser copper interconnection sintering process using a secondary heat coating, which reduced the unfilled rate of surface microstructures from 35.31 % to 11.25 % and increased the copper interconnection strength from 31.42 MPa to 43.65 MPa. Finally, finite element simulation analysis was employed to study the temperature and stress distribution of the copper interconnect during operation and to predict its service life under thermal cycling conditions (−50 °C–300 °C). The results demonstrated that the reliability of the sintered structure meets operational requirements.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"186 ","pages":"Article 109081"},"PeriodicalIF":4.2,"publicationDate":"2024-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142650618","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Biaxial bending strength of thin silicon dies in the ring-on-ring test by considering geometric nonlinearity and material anisotropy","authors":"M.Y. Tsai ,&nbsp;T.C. Kuo ,&nbsp;P.J. Hsieh ,&nbsp;P.S. Huang","doi":"10.1016/j.mssp.2024.109068","DOIUrl":"10.1016/j.mssp.2024.109068","url":null,"abstract":"<div><div>The ring-on-ring test (RoR) is a standard biaxial bending test specified in ASTM C1499-19 and ISO 17167. This test has been utilized for characterizing the biaxial bending strength of silicon dies or wafers to eliminate the die edge chipping effect in the four-point bending test. However, judging from the literature, when testing thin silicon dies, the test is subject to geometric nonlinear effects. This study aims to investigate this nonlinear mechanics in the RoR test using experimental, theoretical, and numerical methods while considering silicon material anisotropy. A 2D-isotropy model of a nonlinear finite element method (NFEM) simulation with specimen elastic modulus of 130 GPa is utilized and verified by experiments and a 3D-anisotropy model in terms of deformation (or displacement) and stresses. Based on the 2D-isotropy NFEM solutions, the fitting equations of correction factors to the theoretical solution are proposed and implemented on determining the biaxial bending strength of 10 mm × 10 mm silicon dies ranging from 57 μm to 297 μm in thickness. It is found that those proposed fitting equations are independent on the test specimen thickness, radius, and materials but not on the radii of the loading and supporting rings. It has also been successfully demonstrated that the RoR test using the theory associated with the correction factor equations can be easy to use to determine the biaxial bending strength of the thin silicon dies that frequently failed in the nonlinear range.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"186 ","pages":"Article 109068"},"PeriodicalIF":4.2,"publicationDate":"2024-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142651344","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Investigation of the effect of oxygen partial pressure during reactive sputtering of tantalum oxide resistive random access memory switching layer","authors":"Rajas Mathkari ,&nbsp;Maximilian Liehr ,&nbsp;Pramod Ravindra ,&nbsp;Ross Pareis ,&nbsp;Karsten Beckmann ,&nbsp;Natalya Tokranova ,&nbsp;Sandra Schujman ,&nbsp;Iqbal Saraf ,&nbsp;Oscar Van der Straten ,&nbsp;Nanbo Gong ,&nbsp;Takashi Ando ,&nbsp;Nathaniel Cady","doi":"10.1016/j.mssp.2024.109060","DOIUrl":"10.1016/j.mssp.2024.109060","url":null,"abstract":"<div><div>Resistive Random Access Memory (ReRAM) is a novel non-volatile memory technology, with potential applications spanning high-density memory and embedded memory in various non-von Neumann computing architectures. This study investigated the dependency of ReRAM switching parameters on the stoichiometry of the tantalum oxide switching layer. Devices were fabricated using reactive sputtering where oxygen partial pressure was varied during deposition of the switching layer. X-ray photoelectron spectroscopy was employed to evaluate the resulting tantalum oxide film composition, showing distinct Ta sub-oxides for each oxygen partial pressure implemented during reactive sputtering. Electrical characterization revealed optimal device performance, with sub-3 V forming voltage and memory window &gt;10 for ReRAM devices deposited with 0.14 mTorr pO₂. Devices fabricated at lower pO₂ and excessively high pO₂ failed to exhibit resistive switching behavior.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"186 ","pages":"Article 109060"},"PeriodicalIF":4.2,"publicationDate":"2024-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142577812","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Correlation of the crystal structure, bond characteristics, and microwave dielectric properties of (1-x)MgTiO3 – xCa0.5Sr0.5TiO3 ceramic for DRA applications","authors":"Subhralin Mohapatra ,&nbsp;T. Badapanda ,&nbsp;R. Barman ,&nbsp;T.K. Das ,&nbsp;Y. Huang ,&nbsp;J. Xiao ,&nbsp;Satya N. Tripathy","doi":"10.1016/j.mssp.2024.109061","DOIUrl":"10.1016/j.mssp.2024.109061","url":null,"abstract":"<div><div>In this current work, we report the impact of Ca_0.5Sr_0.5TiO₃ in the crystal structures, microstructures, and the dielectric performances in the microwave region on MgTiO₃ perovskite ceramic with standard formula of (1-x)MgTiO₃-xCa_0.5Sr_0.5TiO₃ [x = 0.025–0.1] (referred to as (1-x)MTO-xCSTO). The samples were prepared by employing the well-known solid-state reaction route. The crystal structure analysis was carried out using X-ray diffraction and Rietveld refinement confirms the existence of a dual phase in the composition. Scanning electron microscope techniques have been utilized to examine the crystal structure and microstructural characteristics of materials. The dense and homogeneous microstructures of (1-x)MTO-xCSTO materials have been verified by the SEM images. The various vibrational modes associated with the composition were identified from the Raman spectroscopy and the variation of the width of the spectra is correlated with the dielectric performance. The dielectric parameters were obtained from the vector network analyzer and the temperature coefficient (at the resonating frequency) and quality factor from the TE_01δ mode of (1-x)MTO-xCSTO compound. The bond strength, bond valency, and tolerance factor of the samples were correlated with the quality factor and temperature coefficient. The (1-x)MTO-xCSTO composition exhibits exceptional thermal stability due to a linearly zero temperature coefficient. The variation of quality factor with the variation of Ca_0.5Sr_0.5TiO₃ was correlated with the variation of the width of the Raman spectra. Among all the compositions, x = 0.05 shows a high-quality factor and nearly zero temperature coefficient.</div><div>Further, the infrared reflectance spectra of the optimum composition have been analyzed and the various phonon modes were identified using the standard harmonic oscillator model. Furthermore, the dielectric resonator antenna has been developed with (1-x)MTO-xCSTO ceramics as resonators, and several antenna parameters have been analyzed by HFSS software. The observed microwave dielectric properties and the antenna characteristics indicate that the (1-x)MTO-xCSTO (for x = 0.05) composition can be a prominent dielectric resonator for 5G applications operating at the C frequency band.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"186 ","pages":"Article 109061"},"PeriodicalIF":4.2,"publicationDate":"2024-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142577811","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"N- and P-type doping of diamonds: A review","authors":"Maria Sultana ,&nbsp;Subrata Karmakar ,&nbsp;Ariful Haque","doi":"10.1016/j.mssp.2024.109024","DOIUrl":"10.1016/j.mssp.2024.109024","url":null,"abstract":"<div><div>Diamond has been one of the most investigated ultrawide bandgap (UWBG) semiconductors for optoelectronics, superconductors, energy, and quantum applications for almost half of a century owing to its unique properties. Diamonds' intrinsic features-a large bandgap (5.47 eV), an extremely high breakdown voltage (10 MV/cm), the highest thermal conductivity (2200 W/m-K), and very high radiation-tolerance, make them promising for high-power, high-frequency devices suitable for high-temperature and extreme radiation environments. Since the demand for high-speed consumer electronics with large power and faster data handling capacity is rising at an unprecedented rate in the post-COVID era, diamonds' excellent mobility of electrons and holes (4500 and 3800 cm²/V-s) make them ideal for servers and systems. To materialize these multipurpose devices with higher efficiency and endurance than Si and SiC-based technologies, diamonds with good p- and n-type conductivity are needed. Therefore, nearly several decades-long efforts have been devoted to understanding and controlling the carrier conductivities in diamonds. Furthermore, diamonds' color centers' remarkable application as the qubit for next-generation quantum computers has also sparked interest in investigating diamond point defects at the quantum level. Hence, it is necessary to comprehensively study the fabrication, doping, and applications in semiconducting and quantum devices to stay relevant to the diamond revolution and thus advance this flourishing field. Therefore, this review article summarizes the current status and breakthroughs in diamond doping and devices fabricated using doped diamonds to provide an overview of the challenges and successes in using this highly promising UWBG material in electronic, superconducting, and quantum applications.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"186 ","pages":"Article 109024"},"PeriodicalIF":4.2,"publicationDate":"2024-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142577810","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Experimental study of chemical mechanical polishing of polycrystalline diamond based on photo-Fenton reaction","authors":"Ziyuan Luo ,&nbsp;Jiabin Lu ,&nbsp;Qiusheng Yan ,&nbsp;Weiming Cai ,&nbsp;Weilin Huang","doi":"10.1016/j.mssp.2024.109072","DOIUrl":"10.1016/j.mssp.2024.109072","url":null,"abstract":"<div><div>Polycrystalline diamond (PCD) is widely used in cutting tools, optical devices, and heat dissipation tools due to its exceptional hardness, wear resistance, and thermal conductivity. However, these excellent properties also make polishing the PCD surface a challenge. Traditional polishing methods struggle to achieve both high material removal efficiency and high-quality surface finishes simultaneously. This paper proposes a chemical mechanical polishing (CMP) method for PCD based on the photo-Fenton reaction. The method utilizes the reaction between H₂O₂ and Fe₃O₄ under ultraviolet (UV) light to generate highly oxidative hydroxyl radicals (·OH), effectively oxidizing the PCD surface to reduce the difficulty of processing. The concentration of ·OH and Fe²⁺/Fe³⁺ in different reaction solutions was measured using spectrophotometry. Results indicate that the concentration of ·OH is highest in the photo-Fenton solution, and UV light promotes the conversion of Fe³⁺ to Fe²⁺, sustaining the ongoing photo-Fenton reaction. Through single-factor polishing experiments, the effects of various processing parameters on the CMP performance of PCD were investigated. The results show that the material removal rate of PCD increases with increasing concentrations of H₂O₂, abrasive particle size, polishing pressure, and polishing disc speed. In contrast, the removal rate first increases and then decreases with increasing UV light intensity and Fe₃O₄ concentration. Additionally, the surface roughness (Ra) of PCD decreases initially and then increases with increasing UV light intensity, abrasive particle size, polishing pressure, and polishing disc speed, while it decreases with increasing Fe₃O₄ and H₂O₂ concentrations. Under the conditions of 100 mW/cm² UV light intensity, 2 wt% Fe₃O₄, 10 wt% H₂O₂, 5 wt% abrasive concentration, 0.5 μm abrasive particle size, 0.89 MPa polishing pressure, and a polishing disc speed of 60 r/min, the material removal rate of PCD reaches 698.7 nm/h, and the surface roughness Ra is 3.78 nm. The photo-Fenton reaction-based CMP method proposed in this paper provides a new approach to polishing hard-to-process materials.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"186 ","pages":"Article 109072"},"PeriodicalIF":4.2,"publicationDate":"2024-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142577813","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}