Materials Science in Semiconductor Processing最新文献

{"title":"Amorphous indium-gallium-zinc-oxide thin film transistors passivated by annealing oxidized MoOx:Ta layers","authors":"Yongliang Chen ,&nbsp;Liangdong Li ,&nbsp;Zecui Gao ,&nbsp;Hennrik Schmidt ,&nbsp;Thomas Huber ,&nbsp;Enrico Franzke ,&nbsp;Chengyuan Dong","doi":"10.1016/j.mssp.2025.110339","DOIUrl":"10.1016/j.mssp.2025.110339","url":null,"abstract":"<div><div>To enhance the bias stress and light illumination stability of amorphous indium–gallium–zinc-oxide thin-film transistors (a-IGZO TFTs), the tantalum-doped molybdenum oxide (MOT) films were proposed as their passivation layers. Two oxidation methods for MOT films, i.e., sputtering oxidation (SO) and annealing oxidation (AO) were comparatively investigated. Optimal processing conditions for both methods were determined by comprehensively evaluating their oxidation states, as well as the electrical performance and bias-stress stability of the corresponding devices. Compared with the unpassivated a-IGZO TFTs, both the SO-devices and AO-devices showed better positive bias stability (PBS) and negative light bias stability (NBIS). Especially, the AO-devices exhibited the best PBS (V_stress = 40 V, ΔV_TH = 0.19 V) and NBIS (V_stress = −20 V, |ΔV_TH| = 0.19 V) properties. Two reasons were assumed to be responsible for the more stable properties of AO-devices than those of SO-devices: (1) suppression of the oxygen plasma damage on the back channels during the deposition of MOT films, and (2) stronger ultraviolet (UV) light reflectivity at the back surfaces during NBIS tests.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"205 ","pages":"Article 110339"},"PeriodicalIF":4.6,"publicationDate":"2025-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145747586","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Comment on Ghebouli et al.: “An ab initio study of the structural, elastic, electronic, optical properties and phonons of the double perovskite oxides Sr2AlXO6 (X = Ta, Nb, V)” [Materials Science in Semiconductor Processing 42 (2016) 405–412]","authors":"D.S. Yadav","doi":"10.1016/j.mssp.2025.110332","DOIUrl":"10.1016/j.mssp.2025.110332","url":null,"abstract":"<div><div>This work aims to comment and discuss on the work previously published by Ghebouli et al.: Materials Science in Semiconductor Processing 42 (2016) 405–412; <span><span>http://dx.doi.org/10.1016/j.mssp.2015.09.026</span><svg><path></path></svg></span>. Unfortunately, after reviewed their work deeply and examined also, we explored a certain numerical perturbations in the estimations of crystal densities (ρ) of cubic structured (Sr₂AlTaO₆ and Sr₂AlNbO₆ except Sr₂AlVO₆) double perovskite oxides, which affects directly all these parameters depend upon it as like longitudinal (V_l), transverse (V_t), and average acoustic wave velocities (V_m) and consequently the Debye temperature (ϴ_D) studied by Ghebouli et al. [1], which crystallized in the space group Fm-3m # 225. In order to enhance their work by rectifying the numerical perturbations in the aforementioned parameters, we reexamine all of the data using appropriate relations, which depends upon the structural parameters (lattice constant and crystal density) and the elastic stiffness constants (C_ij) discussed by Ghebouli et al. [1]. Our estimations for θ_D and ultrasonic velocities for each direction of propagation in cubic single-crystal as one longitudinal (<em>V</em>_l) and two shear velocities (<em>V</em>_t1 and <em>V</em>_<em>t2</em>) of Sr₂AlTaO₆ and Sr₂AlNbO₆ except Sr₂AlVO₆ diverse on a very large scale, while the values of V_t1 [110] for all targeted candidates highly deviated through our improvements. Outcomes for Debye temperature (ϴ_D) of such materials Sr₂AlTaO_6, Sr₂AlNbO₆ and Sr₂AlVO₆ reported by Ghebouli et al. [1] deviated through on a very large scale as 32.37 %, 42.53 % and 26.58 %, respectively, with our existing improvements.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"205 ","pages":"Article 110332"},"PeriodicalIF":4.6,"publicationDate":"2025-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145747583","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Investigation on optical and electronic characteristics of AGZO/Ag heterojunctions","authors":"Tingyao Tian,&nbsp;Zhang Zhang,&nbsp;Juan Guo,&nbsp;Ping Yang","doi":"10.1016/j.mssp.2025.110338","DOIUrl":"10.1016/j.mssp.2025.110338","url":null,"abstract":"<div><div>We investigate the impact of aluminum-gallium (Al-Ga) co-doping on both the electronic structure and optical properties of zinc oxide-based/silver (ZnO/Ag) heterojunction using density functional theory (DFT). The results indicate that Al doping contributes more electrons than Ga doping; However, these electrons are less effectively converted into free carriers within a heterojunction system. Ga doping significantly increases carrier density, accounting for its superior conductivity compared to Al doping. Al-Ga co-doped ZnO (AGZO) further enhances the number of free carriers that Al ions contribute. Work function and charge density difference calculations confirm the transfer of electrons via the AGZO layer, resulting in improved conductivity. Optical property analysis reveals that Al-Ga co-doping significantly reduces light absorption and reflection while improving transmittance in the visible light range. The findings demonstrate that AGZO/Ag heterojunction effectively optimizes the balance between electronic structure and optical properties, providing potential for advancing multi-layer transparent thin films.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"205 ","pages":"Article 110338"},"PeriodicalIF":4.6,"publicationDate":"2025-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145747587","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Effect of Ru-loading on the sensing capabilities of Co3O4/rGO for LPG detection at low temperature","authors":"Boitumelo C. Tladi-Baloyi,&nbsp;Zamaswazi P. Tshabalala,&nbsp;Robin E. Kroon,&nbsp;Hendrik C. Swart,&nbsp;David E. Motaung","doi":"10.1016/j.mssp.2025.110331","DOIUrl":"10.1016/j.mssp.2025.110331","url":null,"abstract":"<div><div>Liquefied petroleum gas (LPG) production is imperative as part of the global energy mix, while its timely detection is also vital for the safety of mankind. Thus, herein, Ru-loaded Co₃O₄/rGO nanocomposites were evaluated for LPG sensing. Structural analyses confirmed the successful loading of Ru nanoparticles (NPs) onto Co₃O₄/rGO sheets, resulting in the formation of hierarchical nanostructures as observed in the morphology analysis. Among the fabricated sensors, the 1.5 wt% Ru sensor exhibited the highest sensitivity of 12.3 toward 1000 ppm LPG at 75 °C, with a rapid response time of 44 s and a recovery time of 218 s. When the sensors were tested toward LPG in the presence of other interfering gases (NO₂, CH₄, CO, C₃H₈, C₃H₆O, CH₃OH, C₂H₅OH, and 90 % RH, the sensor demonstrated superior sensitivity, stability, and selectivity toward LPG at a low temperature of 75 °C. Moreover, the sensor demonstrated good humidity tolerance and operational stability, retaining 95 % of the initial response over 30 days. These enhancements are attributed to the catalytic role of Ru and its promotion of charge transfer at the Co₃O₄/rGO interface. The findings highlight the potential of Ru-decorated Co₃O₄/rGO as a promising material for low-temperature LPG detection. <strong>Keywords</strong>: Co₃O₄; rGO; Ru; Nanoparticles; LPG; Gas sensing.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"205 ","pages":"Article 110331"},"PeriodicalIF":4.6,"publicationDate":"2025-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145747584","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Influence of argon hydrogen plasma treatment on the wettability, void and high temperature reflow reliability of indium thermal interface material for FCBGA package","authors":"Yiou Qiu ,&nbsp;Zhen Liu ,&nbsp;Linzheng Fu ,&nbsp;Ping Wu ,&nbsp;Liu Li ,&nbsp;Danni Cao ,&nbsp;Wenjuan Guo ,&nbsp;Oufei Liu ,&nbsp;Shangde Xu ,&nbsp;Xia Feng ,&nbsp;Minxuan Liu ,&nbsp;Xiaodong Teng ,&nbsp;Wenhui Zhu ,&nbsp;Liancheng Wang","doi":"10.1016/j.mssp.2025.110314","DOIUrl":"10.1016/j.mssp.2025.110314","url":null,"abstract":"<div><div>Indium thermal interface materials (TIMs) exhibit significant potential for flip-chip ball grid array (FCBGA) packaging due to their high thermal conductivity (82 W/(m·K)) and remarkable ductility. However, the ultra-thin gold layer often fails to adequately protect against nickel oxidation, which compromises the wettability of the indium TIM and results in the formation of a non-uniform interfacial intermetallic compound (IMC), thereby hindering broader adoption. This study introduces an Ar + H₂ plasma surface treatment aimed at enhancing the wettability of indium TIM on backside metallization (BSM) chips and promoting uniform IMC formation. Experimental results indicate that, following treatment, the indium TIM achieves a spreading ratio of 112.7 % on BSM chips after nine high-temperature reflows, reflecting a 25.7 % improvement compared to untreated samples. Furthermore, a uniform (Ni, Au)₂₈In₇₂ layer develops at the interface, significantly improving wetting performance after multiple reflows. In the Lid/In/BSM chip sandwich structure, the void size percentage for Ar + H₂ plasma-treated samples is only 1.1 % after nine reflows, which is 39 % lower than that of untreated samples. Thermal simulation results reveal that the Ar + H₂ plasma-treated sample, exhibiting the lowest void ratio, attains optimal thermal performance. The developed process is compatible with existing packaging production lines, providing a feasible technical pathway for the industrial application of indium TIMs in FCBGA packaging.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"205 ","pages":"Article 110314"},"PeriodicalIF":4.6,"publicationDate":"2025-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145705585","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A review of the thermo-mechanical analysis framework for microelectronics packaging: Mechanics, material property determination, and structural considerations","authors":"Jeong-Hyeon Park ,&nbsp;Eunhye Lee ,&nbsp;Im-Deok Kim ,&nbsp;Hyunwoo Jung ,&nbsp;Jihyun Kim ,&nbsp;Jungwan Cho ,&nbsp;Jong-hyoung Kim ,&nbsp;Tae-Ik Lee ,&nbsp;Seung-Kyun Kang ,&nbsp;Eun-Ho Lee","doi":"10.1016/j.mssp.2025.110321","DOIUrl":"10.1016/j.mssp.2025.110321","url":null,"abstract":"<div><div>Recent advances in microelectronics packaging, including chiplet architectures and heterogeneous integration, have introduced complex interconnections and the integration of dissimilar materials. These developments complicate the thermal and mechanical behavior of packaging, impacting semiconductor performance and reliability. To address these challenges, a systematic approach to analyzing the thermal-mechanical behavior of microelectronics packages is required. This paper reviews frameworks and methodologies for analyzing such behavior, focusing on the integration of three key tools: mechanics theory, material property determination, and structural pattern consideration. This paper specifically goes beyond individual reviews of the three tools—mechanics theory, material property determination, and structural patterns. Instead, it focuses on systematically analyzing the interconnections among these three tools. To clearly define localized mechanics theory, appropriate material property determination is essential. Furthermore, integrating the constitutive equations for structural analysis becomes increasingly challenging as structural patterns grow more complex. Therefore, a thorough understanding and analysis of the relationships and complementarities among these three tools is crucial. The paper begins by discussing the thermal-mechanical balance laws and dissipation applied within mechanics theory. It examines the coupling between mechanical and thermal aspects in thermodynamic laws and the challenges in determining properties for constitutive equations. The paper then reviews measurement methods for determining mechanical and thermal properties, such as thermal expansion coefficients, highlighting the pros and cons of each technique. Given that mechanics and material properties are applied at local points, the paper also addresses the importance of considering the structure in analysis. Lastly, it discusses the advantages and disadvantages of traditional analytical methods, simulations, and artificial intelligence in evaluating structural characteristics. As the thermo-mechanical behavior of packages becomes more complex, the integration of mechanics, material property determination, and structural considerations will be crucial in understanding and optimizing microelectronics packaging.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"205 ","pages":"Article 110321"},"PeriodicalIF":4.6,"publicationDate":"2025-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145705586","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Material properties and grinding mechanism of SiC laser slicing wafers","authors":"Jingyuan Zheng ,&nbsp;Qiusheng Yan ,&nbsp;Junqiang Lin ,&nbsp;Lijie Wu ,&nbsp;Shupei Wang","doi":"10.1016/j.mssp.2025.110303","DOIUrl":"10.1016/j.mssp.2025.110303","url":null,"abstract":"<div><div>The study systematically investigated the efficient and low-damage removal of the gradient damage layer generated during the laser slicing of silicon carbide (SiC) wafers. The behavior of material removal in the laser-induced modified layer was explored in depth. Although laser slicing enables nearly zero material loss compared with conventional multi-wire sawing, the laser-induced damage layer significantly deteriorates the surface quality during subsequent ultra-smooth grinding processes. Ultra-precision grinding experiments combined with nano-scratch and nano-indentation tests revealed the brittle-to-ductile transition behavior of the SiC-modified layer during grinding. The material removal mechanism evolved in two stages with increasing depth: brittle fracture dominated within the 0–40 μm region, resulting in poor surface integrity; meanwhile, plastic deformation became predominant within the 40–80 μm region, leading to a significant improvement in surface roughness (Sa reduced to 28 nm). Further investigations revealed that the critical load for the brittle-to-ductile transition decreased significantly with increasing material removal (a reduction of 32.33 mN at a removal depth of 60 μm compared to 40 μm), suggesting that removing the damaged layer lowers the energy barrier for plastic deformation. Based on these findings, a physical model of the surface of SiC laser slicing was established. This provides theoretical guidance for developing high-efficiency, low-damage grinding processes and promotes the practical application of laser slicing technology in wafer manufacturing.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"205 ","pages":"Article 110303"},"PeriodicalIF":4.6,"publicationDate":"2025-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145705583","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Advanced non-contact Raman/spectrophotometric deciphering of structural processes in sulfur-implanted/laser-annealed silicon","authors":"Sergey I. Kudryashov ,&nbsp;Ivan M. Podlesnykh ,&nbsp;Valery A. Dravin ,&nbsp;Michael S. Kovalev ,&nbsp;Sergei G. Buga ,&nbsp;George K. Krasin ,&nbsp;Evgenia V. Ulturgasheva ,&nbsp;Alena A. Nastulyavichus ,&nbsp;Evgeny V. Kuzmin ,&nbsp;Vadim A. Shakhnov ,&nbsp;Nikita I. Dolzhenko ,&nbsp;Anastasiya G. Bondarenko","doi":"10.1016/j.mssp.2025.110333","DOIUrl":"10.1016/j.mssp.2025.110333","url":null,"abstract":"<div><div>Local hydrostatic stresses and nanograin dimensions were for the first time simultaneously measured inside sub-micron-thick sulfur-implanted (10¹⁸-10²¹ cm⁻³)/nanosecond-laser annealed surface silicon layers, using a combination of complementary Raman and near-IR transmission spectroscopy methods. Alternating negative spectral shifts of near-IR indirect absorption edge at the lower concentrations (10¹⁸-10¹⁹ cm⁻³) and positive shifts at the higher concentrations (10²⁰-10²¹ cm⁻³) were related to local tensile and compressive hydrostatic stresses in the layers, respectively. Quantitatively accounting for the stress effect on the “red” optical-phonon Raman band shifts, grain dimensions were measured in the laser-annealed hyperdoped layers as a function of sulfur concentration in good agreement with the Hall-effect derived mean free path values for free carriers. Raman spectroscopy when facilitated by near-IR transmission spectroscopy, enables the innovative non-contact structural insight into the stress, nanostructure and carrier transport properties of the hyperdoped layers.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"204 ","pages":"Article 110333"},"PeriodicalIF":4.6,"publicationDate":"2025-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145733108","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Graphene intercalation enhancing responsivity of Sb2Se3-based near-infrared photodetectors","authors":"Xuan Sun ,&nbsp;Weijing Liu ,&nbsp;Weike Wang ,&nbsp;Yifan Wu ,&nbsp;Khadeeja Bashir ,&nbsp;Yuee Xie ,&nbsp;Yuanping Chen","doi":"10.1016/j.mssp.2025.110323","DOIUrl":"10.1016/j.mssp.2025.110323","url":null,"abstract":"<div><div>Although Sb₂Se₃ is a potential optoelectronic material to construct a high-performance near-infrared photodetectors, its rough surface, induced by unique atomic structure, leads to very low responsivities of the single material and its heterostructures. Here, an intercalation of graphene is used to improve photoresponse ability of Sb₂Se₃-based heterostructure, and the mechanism of carrier transport is analyzed systematically. The results indicate that the photoresponse of a heterostructure Sb₂Se₃/MoS₂ can be improved significantly, for example, its responsivity (<em>R</em>) is enhanced 26-fold, reaching an exceptional value of 75 A/W; and the specific detectivity (<em>D∗</em>) is enhanced 5-fold, with a value of 6.7 × 10¹¹ Jones. Our analysis indicates that the intercalation effectively suppressing the effect of Sb₂Se₃ surface defects, detailly, the transient absorption (TA) micro-spectroscopies reveal that graphene promotes the transport of carriers from Sb₂Se₃ to MoS₂. Our work not only provides a good broadband especially near-infrared photodevices Sb₂Se₃/graphene/MoS₂, but also offers an effective strategy for designing high-performance PDs by intercalations in heterostructures.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"204 ","pages":"Article 110323"},"PeriodicalIF":4.6,"publicationDate":"2025-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145733107","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Fully transparent synaptic transistors with a single channel layer enabling ternary logic via Fowler–Nordheim tunneling for in-memory computing","authors":"Chohyeon Park ,&nbsp;Jung Wook Lim","doi":"10.1016/j.mssp.2025.110329","DOIUrl":"10.1016/j.mssp.2025.110329","url":null,"abstract":"<div><div>Multivalued logic (MVL) is a promising alternative to binary logic in next-generation computing systems, enabling higher data density and lower circuit complexity. This study presents a fully transparent synaptic transistor-based MVL device that integrates logic and memory functionalities within a single device, as incorporating memory functionality can transform MVL devices into powerful platforms for in-memory computing. The proposed device, employing multilayered transparent electrodes and a CMOS-compatible single TiO₂ channel layer, not only expands applicability to transparent electronics but also simplifies the fabrication process significantly. The device implements stable, well-defined ternary logic states via Fowler–Nordheim tunneling between the gate and source electrodes. In addition, the synaptic memory functionality of the device, governed by charge trapping at the channel/dielectric interface, enables 2048 distinct conductance states (11-bit precision) for short-term memory with a high linearity factor of 0.92 and ultra-low energy consumption (∼2.13 fJ), while supporting programmable logic-state modulation through long-term memory. The proposed fully transparent synaptic transistor-based ternary logic device, integrating both logic and memory functions, lays the foundation for simplified, energy-efficient, and versatile in-memory computing architectures.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"204 ","pages":"Article 110329"},"PeriodicalIF":4.6,"publicationDate":"2025-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145733105","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}