We theoretically establish a realizable non-perturbative mechanism for generating high harmonics (up to 6th order) in Hall currents within curved two-dimensional nanoarchitectures. Unlike previously explored perturbative mechanisms based on inversion symmetry breaking or Berry curvature, the high-harmonic generation demonstrated here is driven by magnetic-field dipoles induced purely by nanoscale curvature under an applied uniform magnetic field. We develop a theory showing that these harmonics originate from unique snake orbits induced by the interplay between an alternating electric field and curvature-induced magnetic-field dipole. Moreover, we establish quantitative control over harmonic suppression and enhancement by tuning the amplitude and orientation of the magnetic field, uncovering distinct symmetry-based even/odd harmonic selection rules. These findings provide a tunable platform for engineering nonlinear currents in curved electronics, with potential applications in developing high-frequency Hall sensors and THz devices.
{"title":"High harmonic Hall currents driven by curved conducting nanoarchitecture","authors":"Botsz Huang , Wei-Xiang Yin , Xiao Zhang , Ching-Hao Chang","doi":"10.1016/j.mtphys.2025.101965","DOIUrl":"10.1016/j.mtphys.2025.101965","url":null,"abstract":"<div><div>We theoretically establish a realizable non-perturbative mechanism for generating high harmonics (up to 6th order) in Hall currents within curved two-dimensional nanoarchitectures. Unlike previously explored perturbative mechanisms based on inversion symmetry breaking or Berry curvature, the high-harmonic generation demonstrated here is driven by magnetic-field dipoles induced purely by nanoscale curvature under an applied uniform magnetic field. We develop a theory showing that these harmonics originate from unique <em>snake orbits</em> induced by the interplay between an alternating electric field and curvature-induced magnetic-field dipole. Moreover, we establish quantitative control over harmonic suppression and enhancement by tuning the amplitude and orientation of the magnetic field, uncovering distinct symmetry-based even/odd harmonic selection rules. These findings provide a tunable platform for engineering nonlinear currents in curved electronics, with potential applications in developing high-frequency Hall sensors and THz devices.</div></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"60 ","pages":"Article 101965"},"PeriodicalIF":9.7,"publicationDate":"2025-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145645135","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-12-01DOI: 10.1016/j.mtphys.2025.101946
Ziheng Zhan , Yinfeng Li , Meiyang Hu , Mingzhu Xie , Ziqiang Zhang , Meng Ning
Solar water evaporation has emerged as a promising strategy to mitigate global water scarcity, owing to its low energy consumption, environmental compatibility, and high evaporation efficiency. In this work, a bio-inspired solar evaporator was developed by emulating the structural and functional characteristics of natural corals through multi-material 3D printing. The evaporator surface was modified with carbon nanotubes (CNTs), resulting in a solar absorption capacity of 98.1 % and exceptional photothermal conversion. Superhydrophilicity was introduced to the coral-like micro-architectures via oxygen plasma treatment, which enhanced water permeability and expanded the available area for evaporation. Under 1 sun irradiation, the evaporator achieved a high evaporation rate of 1.81 kg m−2 h−1 with an energy conversion efficiency of 95.8 %. Furthermore, the evaporator exhibited remarkable capabilities in desalination and water purification, eliminating metal ions, strong acids/bases, and organic pollutants with removal rates surpassing 99.99 %. Outdoor experiments using saline water (3.5 wt%) confirmed stable and efficient evaporation under natural sunlight, thereby highlighting the practical potential of this approach for sustainable freshwater production.
{"title":"Coral-inspired solar water evaporator based on multiple-materials 3D printing for efficient seawater desalination","authors":"Ziheng Zhan , Yinfeng Li , Meiyang Hu , Mingzhu Xie , Ziqiang Zhang , Meng Ning","doi":"10.1016/j.mtphys.2025.101946","DOIUrl":"10.1016/j.mtphys.2025.101946","url":null,"abstract":"<div><div>Solar water evaporation has emerged as a promising strategy to mitigate global water scarcity, owing to its low energy consumption, environmental compatibility, and high evaporation efficiency. In this work, a bio-inspired solar evaporator was developed by emulating the structural and functional characteristics of natural corals through multi-material 3D printing. The evaporator surface was modified with carbon nanotubes (CNTs), resulting in a solar absorption capacity of 98.1 % and exceptional photothermal conversion. Superhydrophilicity was introduced to the coral-like micro-architectures via oxygen plasma treatment, which enhanced water permeability and expanded the available area for evaporation. Under 1 sun irradiation, the evaporator achieved a high evaporation rate of 1.81 kg m<sup>−2</sup> h<sup>−1</sup> with an energy conversion efficiency of 95.8 %. Furthermore, the evaporator exhibited remarkable capabilities in desalination and water purification, eliminating metal ions, strong acids/bases, and organic pollutants with removal rates surpassing 99.99 %. Outdoor experiments using saline water (3.5 wt%) confirmed stable and efficient evaporation under natural sunlight, thereby highlighting the practical potential of this approach for sustainable freshwater production.</div></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"59 ","pages":"Article 101946"},"PeriodicalIF":9.7,"publicationDate":"2025-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145536050","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-12-01DOI: 10.1016/j.mtphys.2025.101955
Jianguo Si , Hao Gao , Lanting Shi , Bozhu Chen , Huanhuan Yang , Jiyu Xu , Miao Liu , Sheng Meng
Materials with a clathrate structure serve as a prominent platform for studying superconductivity, especially in the search for high superconducting critical temperature (TC) under low or ambient pressure. Here we demonstrate that strong nuclear anharmonic and quantum effects drastically stabilize K-doped boron-carbon clathrate at ambient conditions, forming dynamically stable KB3C3 clathrate. Incorporating anharmonicity-corrected dynamical matrices into the anisotropic Migdal-Eliashberg equations, we predict that KB3C3 is a two-gap superconductor with a TC of 102.5 K, the highest value predicted among clathrate systems at ambient pressure. This exceptional TC originates from the strong coupling between B-2p orbitals and soft phonons. A moderate pressure can further drive KB3C3 clathrate into a thermodynamically favorable phase, suggesting that it could be synthesized via high-pressure technique and then quenched to ambient pressure. These findings highlight the key roles of anharmonic vibrations and nuclear quantum fluctuations in stabilizing clathrate structures even to ambient pressure, offering a promising pathway towards room temperature superconductivity.
{"title":"A dynamic high-temperature superconductor at ambient pressure","authors":"Jianguo Si , Hao Gao , Lanting Shi , Bozhu Chen , Huanhuan Yang , Jiyu Xu , Miao Liu , Sheng Meng","doi":"10.1016/j.mtphys.2025.101955","DOIUrl":"10.1016/j.mtphys.2025.101955","url":null,"abstract":"<div><div>Materials with a clathrate structure serve as a prominent platform for studying superconductivity, especially in the search for high superconducting critical temperature (<em>T</em><sub><em>C</em></sub>) under low or ambient pressure. Here we demonstrate that strong nuclear anharmonic and quantum effects drastically stabilize K-doped boron-carbon clathrate at ambient conditions, forming dynamically stable KB<sub>3</sub>C<sub>3</sub> clathrate. Incorporating anharmonicity-corrected dynamical matrices into the anisotropic Migdal-Eliashberg equations, we predict that KB<sub>3</sub>C<sub>3</sub> is a two-gap superconductor with a <em>T</em><sub><em>C</em></sub> of 102.5 K, the highest value predicted among clathrate systems at ambient pressure. This exceptional <em>T</em><sub><em>C</em></sub> originates from the strong coupling between B-2<em>p</em> orbitals and soft phonons. A moderate pressure can further drive KB<sub>3</sub>C<sub>3</sub> clathrate into a thermodynamically favorable phase, suggesting that it could be synthesized via high-pressure technique and then quenched to ambient pressure. These findings highlight the key roles of anharmonic vibrations and nuclear quantum fluctuations in stabilizing clathrate structures even to ambient pressure, offering a promising pathway towards room temperature superconductivity.</div></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"59 ","pages":"Article 101955"},"PeriodicalIF":9.7,"publicationDate":"2025-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145593475","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-12-01DOI: 10.1016/j.mtphys.2025.101961
Lu Ding , Minjun Lei , Zhiliang Jin
The static method was used to synthesize the 2D covalent organic framework (COF) material TpTAPT-COF in this study, and it was constructed with NiMnS nanoparticles to form a covalently connected TpTAPT-COF/NiMnS ohmic junction heterostructure photocatalyst. TpTAPT-COF has a highly ordered conjugated structure and abundant reaction sites, which is conducive to regulating the band structure and improving the electron migration efficiency. The uniform dispersion of NiMnS nanoparticles offers plentiful active sites. The ohmic junction formed in the interface enables a stable ohmic contact between the two, thereby promoting the separation and migration of photogenerated carriers and improving the visible light response. This catalyst exhibits far superior photocatalytic hydrogen evolution performance upon exposure to visible light than a single component would, demonstrating its synergistic structure-activity advantage. This work demonstrates the viability of synthesizing high-quality COFs using the static method and offers a new approach to using ohmic junction-type COFs/metalloid heterostructures for photocatalytic hydrogen production.
{"title":"Synergistic effect of COF and metalloid sulfides on the formed ohmic heterojunction: Accelerating charge transfer for photocatalytic hydrogen production","authors":"Lu Ding , Minjun Lei , Zhiliang Jin","doi":"10.1016/j.mtphys.2025.101961","DOIUrl":"10.1016/j.mtphys.2025.101961","url":null,"abstract":"<div><div>The static method was used to synthesize the 2D covalent organic framework (COF) material TpTAPT-COF in this study, and it was constructed with NiMnS nanoparticles to form a covalently connected TpTAPT-COF/NiMnS ohmic junction heterostructure photocatalyst. TpTAPT-COF has a highly ordered conjugated structure and abundant reaction sites, which is conducive to regulating the band structure and improving the electron migration efficiency. The uniform dispersion of NiMnS nanoparticles offers plentiful active sites. The ohmic junction formed in the interface enables a stable ohmic contact between the two, thereby promoting the separation and migration of photogenerated carriers and improving the visible light response. This catalyst exhibits far superior photocatalytic hydrogen evolution performance upon exposure to visible light than a single component would, demonstrating its synergistic structure-activity advantage. This work demonstrates the viability of synthesizing high-quality COFs using the static method and offers a new approach to using ohmic junction-type COFs/metalloid heterostructures for photocatalytic hydrogen production.</div></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"59 ","pages":"Article 101961"},"PeriodicalIF":9.7,"publicationDate":"2025-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145608794","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-12-01DOI: 10.1016/j.mtphys.2025.101952
Anshika Gupta , Hanseong Cho , Jinhyeok Pak , Sanjeev K. Sharma , Youngmin Lee , Sejoon Lee
The degradation of organic dyes is not only an environmental concern but also a platform for exploring charge-carrier dynamics in photocatalytic nanomaterials. Here, we investigate the impact of Y, Au, and Ag doping on the electronic and optical properties of hydrothermally synthesized TiO2 nanoparticles and their relation to solar-driven photocatalysis. Among the samples, TiO2:Ag exhibits the most pronounced activity, achieving >93 % removal of rhodamine B, methyl orange, and methylene blue in both single- and mixed-dye systems under natural sunlight (∼830 W/m2). This superior performance originates from the coexistence of Ag+ dopants and plasmonic Ag0 species: Ag+ introduces intermediate states that narrow the bandgap and extend visible-light absorption, while metallic Ag0 forms Schottky junctions and supports localized surface plasmon resonance, thereby enhancing charge separation and prolonging carrier lifetimes. The synergy between Ag+ and Ag0 establishes a fundamental mechanism for efficient photocarrier generation, transport, and utilization in semiconductor photocatalysts. These findings provide physics-based insight into dopant–plasmon interactions and band-structure engineering, offering generalizable design principles for visible-light-active photocatalysis and optoelectronic applications.
{"title":"Synergistic roles of Ag+ and Ag0 in TiO2:Ag photocatalyst for enhanced solar-driven degradation of mixed dye pollutants","authors":"Anshika Gupta , Hanseong Cho , Jinhyeok Pak , Sanjeev K. Sharma , Youngmin Lee , Sejoon Lee","doi":"10.1016/j.mtphys.2025.101952","DOIUrl":"10.1016/j.mtphys.2025.101952","url":null,"abstract":"<div><div>The degradation of organic dyes is not only an environmental concern but also a platform for exploring charge-carrier dynamics in photocatalytic nanomaterials. Here, we investigate the impact of Y, Au, and Ag doping on the electronic and optical properties of hydrothermally synthesized TiO<sub>2</sub> nanoparticles and their relation to solar-driven photocatalysis. Among the samples, TiO<sub>2</sub>:Ag exhibits the most pronounced activity, achieving >93 % removal of rhodamine B, methyl orange, and methylene blue in both single- and mixed-dye systems under natural sunlight (∼830 W/m<sup>2</sup>). This superior performance originates from the coexistence of Ag<sup>+</sup> dopants and plasmonic Ag<sup>0</sup> species: Ag<sup>+</sup> introduces intermediate states that narrow the bandgap and extend visible-light absorption, while metallic Ag<sup>0</sup> forms Schottky junctions and supports localized surface plasmon resonance, thereby enhancing charge separation and prolonging carrier lifetimes. The synergy between Ag<sup>+</sup> and Ag<sup>0</sup> establishes a fundamental mechanism for efficient photocarrier generation, transport, and utilization in semiconductor photocatalysts. These findings provide physics-based insight into dopant–plasmon interactions and band-structure engineering, offering generalizable design principles for visible-light-active photocatalysis and optoelectronic applications.</div></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"59 ","pages":"Article 101952"},"PeriodicalIF":9.7,"publicationDate":"2025-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145594123","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
For emerging two-dimensional semiconductor Field-Effect Transistors (2D FETs), reducing the contact resistance between metals and the 2D semiconductor channel is paramount for their application in high-performance devices. Herein, based on density functional theory, by using monolayer (ML) Pma2-SiS which is an emerging 2D semiconductor with direct band gap and ultrahigh electron mobility as the channel material, the structural and electronic properties of different types metal-SiS contact interfaces are systematically studied. The results indicate that based on the alignment of the semiconductor's band structure and the metal's work function, we utilize the Fermi-level pinning induced by strong interactions between the typical metal electrodes and semiconductor to establish natural N-Type Ohmic contact. This Ohmic contact exhibits no Schottky barrier and does not introduce additional tunneling barriers. Quantum transport simulations were performed to calculate the contact resistance of different types Ohmic contacts in devices. The van der Waals (vdW) contacts exhibit high contact resistance due to weak interlayer coupling, whereas the natural Ohmic contacts demonstrate superior carrier transfer efficiency, achieving ultralow contact resistance closer to the quantum limit compared to vdW contacts and hydrogen-bonding contacts. Furthermore, this strategy for minimizing contact resistance in transistor provides new insights into material selection and contact design, which holds critical implications for addressing the performance scaling challenges in next-generation high-performance transistors.
{"title":"Natural ohmic contacts in monolayer Pma2-SiS: Towards quantum-limit contact resistance for 2D transistors","authors":"Pengfei Wu, Yiming Lin, Guobo Chen, Shuwei Xia, Liangmin Yu","doi":"10.1016/j.mtphys.2025.101964","DOIUrl":"10.1016/j.mtphys.2025.101964","url":null,"abstract":"<div><div>For emerging two-dimensional semiconductor Field-Effect Transistors (2D FETs), reducing the contact resistance between metals and the 2D semiconductor channel is paramount for their application in high-performance devices. Herein, based on density functional theory, by using monolayer (ML) <em>Pma</em>2-SiS which is an emerging 2D semiconductor with direct band gap and ultrahigh electron mobility as the channel material, the structural and electronic properties of different types metal-SiS contact interfaces are systematically studied. The results indicate that based on the alignment of the semiconductor's band structure and the metal's work function, we utilize the Fermi-level pinning induced by strong interactions between the typical metal electrodes and semiconductor to establish natural N-Type Ohmic contact. This Ohmic contact exhibits no Schottky barrier and does not introduce additional tunneling barriers. Quantum transport simulations were performed to calculate the contact resistance of different types Ohmic contacts in devices. The van der Waals (vdW) contacts exhibit high contact resistance due to weak interlayer coupling, whereas the natural Ohmic contacts demonstrate superior carrier transfer efficiency, achieving ultralow contact resistance closer to the quantum limit compared to vdW contacts and hydrogen-bonding contacts. Furthermore, this strategy for minimizing contact resistance in transistor provides new insights into material selection and contact design, which holds critical implications for addressing the performance scaling challenges in next-generation high-performance transistors.</div></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"59 ","pages":"Article 101964"},"PeriodicalIF":9.7,"publicationDate":"2025-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145645134","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-12-01DOI: 10.1016/j.mtphys.2025.101968
Youngjin Kang , Taegyu Kim , Hyunhee Kim , San Nam , Hyunho Jang , Dongwon Kang , Jeong-Wan Jo , Sung Kyu Park , Yong-Hoon Kim
As oxide semiconductors are emerging as key materials for next-generation semiconductor devices, aggressive scaling requirements in technologies such as monolithic 3D integration necessitate a reduction in channel thickness. However, the electrical performance of oxide field-effect transistors (FETs) generally deteriorates markedly as the channel thickness decreases. To systematically investigate the effects of thickness scaling and the underlying mechanisms, indium-gallium-zinc-oxide (IGZO) and zinc-tin-oxide (ZTO) FETs were fabricated and their electrical characteristics were analyzed as a function of channel thickness. ZTO FETs exhibited a mobility of 37.8 cm2/V·s at a channel thickness of 5.1 nm, which decreased to 1.43 cm2/V·s at 2.7 nm, while consistently outperforming their IGZO counterparts across all thicknesses (cf. 5.3 nm: 10.19 cm2/V·s; 2.5 nm: 0.06 cm2/V·s). To further elucidate the degradation mechanism, activation energies associated with trap barrier heights were extracted from temperature-dependent mobility measurements. In addition, interface trap density (Dit) was quantified through capacitance-voltage and capacitance-frequency analyses using the conductance method. The results revealed a clear increase in Dit with decreasing channel thickness, with ZTO FETs exhibiting lower Dit values than IGZO FETs at comparable thicknesses, in strong correlation with their higher electrical performance.
{"title":"Impact of channel thickness scaling on interface trap density and electrical properties of ultrathin oxide field-effect transistors","authors":"Youngjin Kang , Taegyu Kim , Hyunhee Kim , San Nam , Hyunho Jang , Dongwon Kang , Jeong-Wan Jo , Sung Kyu Park , Yong-Hoon Kim","doi":"10.1016/j.mtphys.2025.101968","DOIUrl":"10.1016/j.mtphys.2025.101968","url":null,"abstract":"<div><div>As oxide semiconductors are emerging as key materials for next-generation semiconductor devices, aggressive scaling requirements in technologies such as monolithic 3D integration necessitate a reduction in channel thickness. However, the electrical performance of oxide field-effect transistors (FETs) generally deteriorates markedly as the channel thickness decreases. To systematically investigate the effects of thickness scaling and the underlying mechanisms, indium-gallium-zinc-oxide (IGZO) and zinc-tin-oxide (ZTO) FETs were fabricated and their electrical characteristics were analyzed as a function of channel thickness. ZTO FETs exhibited a mobility of 37.8 cm<sup>2</sup>/V·s at a channel thickness of 5.1 nm, which decreased to 1.43 cm<sup>2</sup>/V·s at 2.7 nm, while consistently outperforming their IGZO counterparts across all thicknesses (<em>cf</em>. 5.3 nm: 10.19 cm<sup>2</sup>/V·s; 2.5 nm: 0.06 cm<sup>2</sup>/V·s). To further elucidate the degradation mechanism, activation energies associated with trap barrier heights were extracted from temperature-dependent mobility measurements. In addition, interface trap density (D<sub>it</sub>) was quantified through capacitance-voltage and capacitance-frequency analyses using the conductance method. The results revealed a clear increase in D<sub>it</sub> with decreasing channel thickness, with ZTO FETs exhibiting lower D<sub>it</sub> values than IGZO FETs at comparable thicknesses, in strong correlation with their higher electrical performance.</div></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"60 ","pages":"Article 101968"},"PeriodicalIF":9.7,"publicationDate":"2025-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145651307","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-12-01DOI: 10.1016/j.mtphys.2025.101932
Jie Li , Zhe Li , Yan Lu , Gang Ye , Yan Hong , Li Niu , Jian Fang
The rapid advancement of smart materials and textiles has accelerated innovation in flexible strain sensors, which are capable of monitoring human motion trajectories, mechanical-acoustic signatures, and various physiological signals. However, the acquisition and interpretation of high-dimensional, high-frequency, and noise-prone signals under real-world conditions pose significant challenges to conventional data processing techniques. Machine learning (ML) has emerged as a powerful tool to enhance the functionality and reliability of flexible strain sensing systems. This review systematically summarizes recent progress in the integration of ML with textile-based flexible strain sensors. It begins with an overview of common sensor types, operating principles, and relevant textile-integrated implementations. Key machine learning algorithms for signal preprocessing, feature extraction, and pattern recognition are then introduced, with an emphasis on their applicability and limitations in handling strain sensing data. The article further examines representative applications across healthcare, assisted living, human–machine communication, and interactive entertainment. Finally, current challenges and future directions are discussed, including sensor design, power efficiency, data processing robustness, and ethical considerations. This review aims to provide insightful perspectives to promote the broader adoption of ML-enhanced flexible sensing systems in smart wearables and intelligent textiles.
{"title":"Research progress of machine learning in flexible strain sensors in the context of material intelligence","authors":"Jie Li , Zhe Li , Yan Lu , Gang Ye , Yan Hong , Li Niu , Jian Fang","doi":"10.1016/j.mtphys.2025.101932","DOIUrl":"10.1016/j.mtphys.2025.101932","url":null,"abstract":"<div><div>The rapid advancement of smart materials and textiles has accelerated innovation in flexible strain sensors, which are capable of monitoring human motion trajectories, mechanical-acoustic signatures, and various physiological signals. However, the acquisition and interpretation of high-dimensional, high-frequency, and noise-prone signals under real-world conditions pose significant challenges to conventional data processing techniques. Machine learning (ML) has emerged as a powerful tool to enhance the functionality and reliability of flexible strain sensing systems. This review systematically summarizes recent progress in the integration of ML with textile-based flexible strain sensors. It begins with an overview of common sensor types, operating principles, and relevant textile-integrated implementations. Key machine learning algorithms for signal preprocessing, feature extraction, and pattern recognition are then introduced, with an emphasis on their applicability and limitations in handling strain sensing data. The article further examines representative applications across healthcare, assisted living, human–machine communication, and interactive entertainment. Finally, current challenges and future directions are discussed, including sensor design, power efficiency, data processing robustness, and ethical considerations. This review aims to provide insightful perspectives to promote the broader adoption of ML-enhanced flexible sensing systems in smart wearables and intelligent textiles.</div></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"59 ","pages":"Article 101932"},"PeriodicalIF":9.7,"publicationDate":"2025-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145545940","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
With the increasing use of electronics and wireless communication, the implications of electromagnetic radiation have garnered significant attention. Recent advancements in the use of crystalline and amorphous fillers in polymer matrices for electromagnetic interference (EMI) shielding represent a noteworthy development. Tunable screen-printed polymer composite films, utilizing these fillers, enable the customization of magnetic and electrical properties essential for effective EMI shielding. The study indicates that polymer composites based on crystalline fillers (PCNF) possess a dielectric constant (ε′) of 8.36 and dielectric loss (ε″) of 6.51, alongside a magnetic permeability (μ′) of 8.24 and magnetic loss (μ″) of 6.59. In comparison, amorphous filler composites (PAM) show superior values: ε′ = 10.94, ε″ = 8.32, μ′ = 10.55, and μ″ = 8.94. The research emphasizes the critical role of structural design in enhancing the shielding performance of these fillers. The preparation of EMI shields through a detailed screen-printing technique is discussed, complemented by simulations conducted with CST Studio Suite Software to analyze electric and magnetic field dynamics. Experimental evaluations reveal that the crystalline composite PCNF achieves an EMI shielding efficiency (EMI SE) of 53.66 dB, while the amorphous composite PAM surpasses this with an EMI SE of 78.8 dB. Reflection-loss assessments further validate these results, with PCNF exhibiting a reflection loss (RL) of −52.9 dB and PAM showing RL of −50.68 dB, indicating predominant absorption in the EMI shields. Overall, the study highlights that the amorphous PAM composites deliver superior EMI shielding efficiency and absorption, making them promising candidates for future lightweight EMI shielding technologies.
{"title":"Fabrication and comparison of flexible electromagnetic interference shields with simulation and experimentation: Screen printed bulk metallic glass verses nanocrystalline ferrite for electromagnetic interference shielding","authors":"Vaishnavi Khade , Avanish Babu Thirumalasetty , Parthiban Ramasamy , Jürgen Eckert , Madhuri Wuppulluri","doi":"10.1016/j.mtphys.2025.101953","DOIUrl":"10.1016/j.mtphys.2025.101953","url":null,"abstract":"<div><div>With the increasing use of electronics and wireless communication, the implications of electromagnetic radiation have garnered significant attention. Recent advancements in the use of crystalline and amorphous fillers in polymer matrices for electromagnetic interference (EMI) shielding represent a noteworthy development. Tunable screen-printed polymer composite films, utilizing these fillers, enable the customization of magnetic and electrical properties essential for effective EMI shielding. The study indicates that polymer composites based on crystalline fillers (PCNF) possess a dielectric constant (<em>ε</em>′) of 8.36 and dielectric loss (<em>ε</em>″) of 6.51, alongside a magnetic permeability (μ′) of 8.24 and magnetic loss (μ″) of 6.59. In comparison, amorphous filler composites (PAM) show superior values: <em>ε</em>′ = 10.94, <em>ε</em>″ = 8.32, μ′ = 10.55, and μ″ = 8.94. The research emphasizes the critical role of structural design in enhancing the shielding performance of these fillers. The preparation of EMI shields through a detailed screen-printing technique is discussed, complemented by simulations conducted with CST Studio Suite Software to analyze electric and magnetic field dynamics. Experimental evaluations reveal that the crystalline composite PCNF achieves an EMI shielding efficiency (EMI SE) of 53.66 dB, while the amorphous composite PAM surpasses this with an EMI SE of 78.8 dB. Reflection-loss assessments further validate these results, with PCNF exhibiting a reflection loss (RL) of −52.9 dB and PAM showing RL of −50.68 dB, indicating predominant absorption in the EMI shields. Overall, the study highlights that the amorphous PAM composites deliver superior EMI shielding efficiency and absorption, making them promising candidates for future lightweight EMI shielding technologies.</div></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"60 ","pages":"Article 101953"},"PeriodicalIF":9.7,"publicationDate":"2025-11-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145598912","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-11-21DOI: 10.1016/j.mtphys.2025.101941
Fangying Ren , Dawei He , Xiaoxian Zhang , Guili Li , Xiaojing Liu , Jiaqi He , Yongsheng Wang , Hui Zhao
Understanding and controlling interlayer charge transfer is critical for advancing the performance of van der Waals (vdW) heterostructures in optoelectronic applications. Despite extensive studies demonstrating ultrafast charge transfer across vdW interfaces, the microscopic mechanisms remain under debate. Here, we report an experimental test of phonon-assisted interlayer charge transfer using a MoSe/MoSSe/MoS trilayer heterostructure. By inserting an alloy MoSSe monolayer between MoSe and MoS, we demonstrate that the electron transfer process becomes significantly faster than in a direct MoSe/MoS bilayer, despite increased spatial separation and reduced band offsets. This result provides support to the phonon-assisted charge transfer model, where the alloy layer enhances phonon-assisted charge transfer from MoSe to MoS layers by offering compatible phonon modes. This finding also offers a new design principle for controlling ultrafast processes in vdW heterostructures and demonstrates that alloy engineering is a powerful strategy to modulate interfacial interactions and unlock novel functionalities in vdW heterostructures.
{"title":"Alloy-mediated phonon-assisted ultrafast charge transfer in transition metal dichalcogenides heterostructures","authors":"Fangying Ren , Dawei He , Xiaoxian Zhang , Guili Li , Xiaojing Liu , Jiaqi He , Yongsheng Wang , Hui Zhao","doi":"10.1016/j.mtphys.2025.101941","DOIUrl":"10.1016/j.mtphys.2025.101941","url":null,"abstract":"<div><div>Understanding and controlling interlayer charge transfer is critical for advancing the performance of van der Waals (vdW) heterostructures in optoelectronic applications. Despite extensive studies demonstrating ultrafast charge transfer across vdW interfaces, the microscopic mechanisms remain under debate. Here, we report an experimental test of phonon-assisted interlayer charge transfer using a MoSe<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span>/MoSSe/MoS<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span> trilayer heterostructure. By inserting an alloy MoSSe monolayer between MoSe<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span> and MoS<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span>, we demonstrate that the electron transfer process becomes significantly faster than in a direct MoSe<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span>/MoS<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span> bilayer, despite increased spatial separation and reduced band offsets. This result provides support to the phonon-assisted charge transfer model, where the alloy layer enhances phonon-assisted charge transfer from MoSe<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span> to MoS<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span> layers by offering compatible phonon modes. This finding also offers a new design principle for controlling ultrafast processes in vdW heterostructures and demonstrates that alloy engineering is a powerful strategy to modulate interfacial interactions and unlock novel functionalities in vdW heterostructures.</div></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"59 ","pages":"Article 101941"},"PeriodicalIF":9.7,"publicationDate":"2025-11-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145560505","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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