Materials Today Physics最新文献_第10页

Corrigendum to ‘Boosted energy harvesting performance of magneto-mechano-electric generator via photon flash annealing for self-powered IoT sensors’ [Mater. Today Phys., 55 (2025), 101758] 应改正的错误,

IF 9.7 2区材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY

Materials Today Physics

Pub Date : 2025-12-01 DOI: 10.1016/j.mtphys.2025.101765

Hyunseok Song, Srinivas Pattipaka, Yun Sik Hwang, Mahesh Peddigari, Yuho Min, Kyeongwoon Chung, Jung Hwan Park, Chang Kyu Jeong, Han Eol Lee, Jongmoon Jang, Kwi-Il Park, Sung-Dae Kim, Jaewon Jeong, Woon-Ha Yoon, Jungho Ryu, Geon-Tae Hwang

引用次数: 0

Cryogenic electronics for high performance computing applications: A comprehensive review 高性能计算应用的低温电子学：综合综述

IF 9.7 2区材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY

Materials Today Physics

Pub Date : 2025-12-01 DOI: 10.1016/j.mtphys.2025.101960

Faisal Bashir , Haider Abbas , Arshid Nisar , Usman Isyaku Bature , Ali Alzahrani , Furqan Zahoor

Future big-data processing with excellent energy efficiency is made possible by universal cryogenic computing, which includes von Neumann, neuromorphic, and quantum computing architectures. The post-Moore era of integrated circuits presents a number of obstacles to enhance the computing performance, making it challenging to satisfy the constantly rising demands of computing. The computing systems based on Cryogenic complementary metal oxide semiconductor (CMOS) have been considered among the most feasible methods for overcoming the performance bottlenecks. Device leakage and wire resistance can be greatly decreased by cooling the circuitry to cryogenic temperatures, which would further enhance performance and energy efficiency. In this work, we conduct a comprehensive review of the Cryogenic CMOS based computing systems for future scaled quantum computing applications. The details of Cryogenic CMOS transistors, Cryogenic processor architecture and Cryogenic CMOS modeling are presented in this review. Also, discussion on the development of cryogenic memory technologies is presented with focus on cryogenic non-superconducting memories (including those based on charge and resistance). Finally, the challenges and opportunities in the further development and deployment of Cryogenic systems are discussed.

未来具有卓越能源效率的大数据处理是通过通用低温计算实现的，其中包括冯·诺伊曼、神经形态和量子计算架构。后摩尔时代的集成电路在提高计算性能方面存在许多障碍，使其难以满足不断增长的计算需求。基于低温互补金属氧化物半导体（CMOS）的计算系统被认为是克服性能瓶颈的最可行的方法之一。通过将电路冷却到低温，可以大大减少器件泄漏和导线电阻，这将进一步提高性能和能源效率。在这项工作中，我们对未来规模量子计算应用的基于低温CMOS的计算系统进行了全面的回顾。本文介绍了低温CMOS晶体管、低温处理器结构和低温CMOS建模的细节。对低温存储技术的发展进行了讨论，重点讨论了低温非超导存储技术（包括基于电荷和电阻的低温存储技术）。最后，讨论了低温系统进一步发展和部署所面临的挑战和机遇。

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引用次数: 0

High harmonic Hall currents driven by curved conducting nanoarchitecture 由弯曲导电纳米结构驱动的高谐波霍尔电流

IF 9.7 2区材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY

Materials Today Physics

Pub Date : 2025-12-01 DOI: 10.1016/j.mtphys.2025.101965

Botsz Huang , Wei-Xiang Yin , Xiao Zhang , Ching-Hao Chang

We theoretically establish a realizable non-perturbative mechanism for generating high harmonics (up to 6th order) in Hall currents within curved two-dimensional nanoarchitectures. Unlike previously explored perturbative mechanisms based on inversion symmetry breaking or Berry curvature, the high-harmonic generation demonstrated here is driven by magnetic-field dipoles induced purely by nanoscale curvature under an applied uniform magnetic field. We develop a theory showing that these harmonics originate from unique snake orbits induced by the interplay between an alternating electric field and curvature-induced magnetic-field dipole. Moreover, we establish quantitative control over harmonic suppression and enhancement by tuning the amplitude and orientation of the magnetic field, uncovering distinct symmetry-based even/odd harmonic selection rules. These findings provide a tunable platform for engineering nonlinear currents in curved electronics, with potential applications in developing high-frequency Hall sensors and THz devices.

我们从理论上建立了一种可实现的非微扰机制，用于在弯曲的二维纳米结构中产生霍尔电流中的高谐波（高达6阶）。与先前探索的基于逆对称破缺或Berry曲率的微扰机制不同，这里展示的高谐波产生是由均匀磁场下纳米级曲率诱导的磁场偶极子驱动的。我们发展了一个理论，表明这些谐波起源于交变电场和曲率感应磁场偶极子之间的相互作用所引起的独特的蛇轨道。此外，我们通过调节磁场的振幅和方向建立了谐波抑制和增强的定量控制，揭示了基于对称的独特偶/奇谐波选择规则。这些发现为弯曲电子器件中的非线性电流工程提供了一个可调平台，在开发高频霍尔传感器和太赫兹器件方面具有潜在的应用前景。

引用次数: 0

Coral-inspired solar water evaporator based on multiple-materials 3D printing for efficient seawater desalination 基于多材料3D打印的珊瑚太阳能蒸发器高效海水淡化

IF 9.7 2区材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY

Materials Today Physics

Pub Date : 2025-12-01 DOI: 10.1016/j.mtphys.2025.101946

Ziheng Zhan , Yinfeng Li , Meiyang Hu , Mingzhu Xie , Ziqiang Zhang , Meng Ning

Solar water evaporation has emerged as a promising strategy to mitigate global water scarcity, owing to its low energy consumption, environmental compatibility, and high evaporation efficiency. In this work, a bio-inspired solar evaporator was developed by emulating the structural and functional characteristics of natural corals through multi-material 3D printing. The evaporator surface was modified with carbon nanotubes (CNTs), resulting in a solar absorption capacity of 98.1 % and exceptional photothermal conversion. Superhydrophilicity was introduced to the coral-like micro-architectures via oxygen plasma treatment, which enhanced water permeability and expanded the available area for evaporation. Under 1 sun irradiation, the evaporator achieved a high evaporation rate of 1.81 kg m⁻² h⁻¹ with an energy conversion efficiency of 95.8 %. Furthermore, the evaporator exhibited remarkable capabilities in desalination and water purification, eliminating metal ions, strong acids/bases, and organic pollutants with removal rates surpassing 99.99 %. Outdoor experiments using saline water (3.5 wt%) confirmed stable and efficient evaporation under natural sunlight, thereby highlighting the practical potential of this approach for sustainable freshwater production.

太阳能水蒸发由于其低能耗、环境兼容性和高蒸发效率而成为缓解全球水资源短缺的一种有前景的策略。在这项工作中，通过多材料3D打印模拟天然珊瑚的结构和功能特征，开发了一个仿生太阳能蒸发器。蒸发器表面用碳纳米管（CNTs）修饰，可获得98.1%的太阳能吸收能力和优异的光热转换。通过氧等离子体处理，将超亲水性引入到珊瑚状微结构中，提高了透水性，扩大了蒸发可用面积。在单太阳照射下，蒸发器蒸发速率高达1.81 kg·m-2·h-1，能量转换效率为95.8%。此外，蒸发器在海水淡化和水净化方面表现出卓越的能力，去除金属离子、强酸/碱和有机污染物，去除率超过99.99%。使用盐水（3.5 wt%）的室外实验证实了在自然阳光下稳定有效的蒸发，从而突出了这种方法在可持续淡水生产方面的实际潜力。

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引用次数: 0

A dynamic high-temperature superconductor at ambient pressure 常温下的动态高温超导体

IF 9.7 2区材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY

Materials Today Physics

Pub Date : 2025-12-01 DOI: 10.1016/j.mtphys.2025.101955

Jianguo Si , Hao Gao , Lanting Shi , Bozhu Chen , Huanhuan Yang , Jiyu Xu , Miao Liu , Sheng Meng

Materials with a clathrate structure serve as a prominent platform for studying superconductivity, especially in the search for high superconducting critical temperature (T_C) under low or ambient pressure. Here we demonstrate that strong nuclear anharmonic and quantum effects drastically stabilize K-doped boron-carbon clathrate at ambient conditions, forming dynamically stable KB₃C₃ clathrate. Incorporating anharmonicity-corrected dynamical matrices into the anisotropic Migdal-Eliashberg equations, we predict that KB₃C₃ is a two-gap superconductor with a T_C of 102.5 K, the highest value predicted among clathrate systems at ambient pressure. This exceptional T_C originates from the strong coupling between B-2p orbitals and soft phonons. A moderate pressure can further drive KB₃C₃ clathrate into a thermodynamically favorable phase, suggesting that it could be synthesized via high-pressure technique and then quenched to ambient pressure. These findings highlight the key roles of anharmonic vibrations and nuclear quantum fluctuations in stabilizing clathrate structures even to ambient pressure, offering a promising pathway towards room temperature superconductivity.

具有笼形结构的材料是研究超导性的重要平台，特别是在寻找低压力或环境压力下的高超导临界温度（TC）方面。研究表明，在环境条件下，强核非调和效应和量子效应极大地稳定了掺杂k的硼碳包合物，形成了动态稳定的KB3C3包合物。在各向异性Migdal-Eliashberg方程中结合非调和校正的动力学矩阵，我们预测了KB3C3是一个双间隙超导体，TC为102.5 K，是环境压力下笼形化合物体系中预测的最大值。这种特殊的TC源于B-2p轨道和软声子之间的强耦合。适当的压力可以进一步驱动KB3C3包合物形成热力学有利的相，表明可以通过高压技术合成，然后淬火到常压。这些发现强调了非谐波振动和核量子波动在稳定包合物结构方面的关键作用，甚至在环境压力下也是如此，为实现室温超导提供了一条有希望的途径。

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引用次数: 0

Synergistic effect of COF and metalloid sulfides on the formed ohmic heterojunction: Accelerating charge transfer for photocatalytic hydrogen production COF和类金属硫化物对形成欧姆异质结的协同作用：加速光催化制氢的电荷转移

IF 9.7 2区材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY

Materials Today Physics

Pub Date : 2025-12-01 DOI: 10.1016/j.mtphys.2025.101961

Lu Ding , Minjun Lei , Zhiliang Jin

The static method was used to synthesize the 2D covalent organic framework (COF) material TpTAPT-COF in this study, and it was constructed with NiMnS nanoparticles to form a covalently connected TpTAPT-COF/NiMnS ohmic junction heterostructure photocatalyst. TpTAPT-COF has a highly ordered conjugated structure and abundant reaction sites, which is conducive to regulating the band structure and improving the electron migration efficiency. The uniform dispersion of NiMnS nanoparticles offers plentiful active sites. The ohmic junction formed in the interface enables a stable ohmic contact between the two, thereby promoting the separation and migration of photogenerated carriers and improving the visible light response. This catalyst exhibits far superior photocatalytic hydrogen evolution performance upon exposure to visible light than a single component would, demonstrating its synergistic structure-activity advantage. This work demonstrates the viability of synthesizing high-quality COFs using the static method and offers a new approach to using ohmic junction-type COFs/metalloid heterostructures for photocatalytic hydrogen production.

本研究采用静态法合成二维共价有机骨架（COF）材料TpTAPT-COF，并将其与纳米NiMnS构建成共价连接的TpTAPT-COF/NiMnS欧姆结异质结构光催化剂。tptpt - cof具有高度有序的共轭结构和丰富的反应位点，有利于调节能带结构，提高电子迁移效率。NiMnS纳米颗粒的均匀分散提供了丰富的活性位点。在界面中形成的欧姆结使得两者之间有稳定的欧姆接触，从而促进光生载流子的分离和迁移，改善可见光响应。该催化剂在可见光下表现出远优于单一组分的光催化析氢性能，证明了其协同结构-活性优势。这项工作证明了利用静态方法合成高质量COFs的可行性，并为利用欧姆结型COFs/类金属异质结构进行光催化制氢提供了新的途径。

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引用次数: 0

Synergistic roles of Ag+ and Ag0 in TiO2:Ag photocatalyst for enhanced solar-driven degradation of mixed dye pollutants Ag+和Ag0在TiO2:Ag光催化剂中协同作用增强太阳驱动降解混合染料污染物

IF 9.7 2区材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY

Materials Today Physics

Pub Date : 2025-12-01 DOI: 10.1016/j.mtphys.2025.101952

Anshika Gupta , Hanseong Cho , Jinhyeok Pak , Sanjeev K. Sharma , Youngmin Lee , Sejoon Lee

The degradation of organic dyes is not only an environmental concern but also a platform for exploring charge-carrier dynamics in photocatalytic nanomaterials. Here, we investigate the impact of Y, Au, and Ag doping on the electronic and optical properties of hydrothermally synthesized TiO₂ nanoparticles and their relation to solar-driven photocatalysis. Among the samples, TiO₂:Ag exhibits the most pronounced activity, achieving >93 % removal of rhodamine B, methyl orange, and methylene blue in both single- and mixed-dye systems under natural sunlight (∼830 W/m²). This superior performance originates from the coexistence of Ag⁺ dopants and plasmonic Ag⁰ species: Ag⁺ introduces intermediate states that narrow the bandgap and extend visible-light absorption, while metallic Ag⁰ forms Schottky junctions and supports localized surface plasmon resonance, thereby enhancing charge separation and prolonging carrier lifetimes. The synergy between Ag⁺ and Ag⁰ establishes a fundamental mechanism for efficient photocarrier generation, transport, and utilization in semiconductor photocatalysts. These findings provide physics-based insight into dopant–plasmon interactions and band-structure engineering, offering generalizable design principles for visible-light-active photocatalysis and optoelectronic applications.

有机染料的降解不仅是一个环境问题，也是探索光催化纳米材料中载流子动力学的一个平台。在这里，我们研究了Y、Au和Ag掺杂对水热合成TiO2纳米粒子的电子和光学性质的影响，以及它们与太阳能驱动光催化的关系。在这些样品中，TiO2:Ag表现出最明显的活性，在自然光照（~ 830 W/m2）下，在单一和混合染料体系中，TiO2:Ag对罗丹明B、甲基橙和亚甲基蓝的去除率均达到93%。这种优异的性能源于Ag+掺杂剂和等离子体Ag0的共存：Ag+引入了中间态，缩小了带隙，延长了可见光吸收，而金属Ag0形成了肖特基结，支持局部表面等离子体共振，从而增强了电荷分离，延长了载流子寿命。Ag+和Ag0之间的协同作用为半导体光催化剂中高效光载流子的产生、传输和利用建立了基本机制。这些发现为掺杂等离子体相互作用和带结构工程提供了基于物理的见解，为可见光活性光催化和光电子应用提供了可推广的设计原则。

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引用次数: 0

Natural ohmic contacts in monolayer Pma2-SiS: Towards quantum-limit contact resistance for 2D transistors 单层pma2 - si的自然欧姆接触：二维晶体管的量子极限接触电阻

IF 9.7 2区材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY

Materials Today Physics

Pub Date : 2025-12-01 DOI: 10.1016/j.mtphys.2025.101964

Pengfei Wu, Yiming Lin, Guobo Chen, Shuwei Xia, Liangmin Yu

For emerging two-dimensional semiconductor Field-Effect Transistors (2D FETs), reducing the contact resistance between metals and the 2D semiconductor channel is paramount for their application in high-performance devices. Herein, based on density functional theory, by using monolayer (ML) Pma2-SiS which is an emerging 2D semiconductor with direct band gap and ultrahigh electron mobility as the channel material, the structural and electronic properties of different types metal-SiS contact interfaces are systematically studied. The results indicate that based on the alignment of the semiconductor's band structure and the metal's work function, we utilize the Fermi-level pinning induced by strong interactions between the typical metal electrodes and semiconductor to establish natural N-Type Ohmic contact. This Ohmic contact exhibits no Schottky barrier and does not introduce additional tunneling barriers. Quantum transport simulations were performed to calculate the contact resistance of different types Ohmic contacts in devices. The van der Waals (vdW) contacts exhibit high contact resistance due to weak interlayer coupling, whereas the natural Ohmic contacts demonstrate superior carrier transfer efficiency, achieving ultralow contact resistance closer to the quantum limit compared to vdW contacts and hydrogen-bonding contacts. Furthermore, this strategy for minimizing contact resistance in transistor provides new insights into material selection and contact design, which holds critical implications for addressing the performance scaling challenges in next-generation high-performance transistors.

对于新兴的二维半导体场效应晶体管（2D fet），降低金属与二维半导体通道之间的接触电阻对于其在高性能器件中的应用至关重要。本文基于密度泛函理论，以具有直接带隙和超高电子迁移率的新兴二维半导体单层pma2 - si作为通道材料，系统研究了不同类型金属- si接触界面的结构和电子性能。结果表明，基于半导体带结构和金属功函数的对准，我们利用典型金属电极与半导体之间的强相互作用诱导的费米能级钉钉建立自然的n型欧姆接触。这种欧姆接触没有肖特基势垒，也不会引入额外的隧穿势垒。通过量子输运模拟计算了器件中不同类型欧姆触点的接触电阻。范德华（vdW）触点由于层间耦合较弱而表现出较高的接触电阻，而天然欧姆触点表现出优越的载流子转移效率，与vdW触点和氢键触点相比，实现了接近量子极限的超低接触电阻。此外，这种最小化晶体管接触电阻的策略为材料选择和接触设计提供了新的见解，这对解决下一代高性能晶体管的性能缩放挑战具有重要意义。

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引用次数: 0

Impact of channel thickness scaling on interface trap density and electrical properties of ultrathin oxide field-effect transistors 沟道厚度缩放对超薄氧化场效应晶体管界面阱密度和电学性能的影响

IF 9.7 2区材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY

Materials Today Physics

Pub Date : 2025-12-01 DOI: 10.1016/j.mtphys.2025.101968

Youngjin Kang , Taegyu Kim , Hyunhee Kim , San Nam , Hyunho Jang , Dongwon Kang , Jeong-Wan Jo , Sung Kyu Park , Yong-Hoon Kim

As oxide semiconductors are emerging as key materials for next-generation semiconductor devices, aggressive scaling requirements in technologies such as monolithic 3D integration necessitate a reduction in channel thickness. However, the electrical performance of oxide field-effect transistors (FETs) generally deteriorates markedly as the channel thickness decreases. To systematically investigate the effects of thickness scaling and the underlying mechanisms, indium-gallium-zinc-oxide (IGZO) and zinc-tin-oxide (ZTO) FETs were fabricated and their electrical characteristics were analyzed as a function of channel thickness. ZTO FETs exhibited a mobility of 37.8 cm²/V·s at a channel thickness of 5.1 nm, which decreased to 1.43 cm²/V·s at 2.7 nm, while consistently outperforming their IGZO counterparts across all thicknesses (cf. 5.3 nm: 10.19 cm²/V·s; 2.5 nm: 0.06 cm²/V·s). To further elucidate the degradation mechanism, activation energies associated with trap barrier heights were extracted from temperature-dependent mobility measurements. In addition, interface trap density (D_it) was quantified through capacitance-voltage and capacitance-frequency analyses using the conductance method. The results revealed a clear increase in D_it with decreasing channel thickness, with ZTO FETs exhibiting lower D_it values than IGZO FETs at comparable thicknesses, in strong correlation with their higher electrical performance.

随着氧化物半导体逐渐成为下一代半导体器件的关键材料，单片3D集成等技术对尺寸的要求越来越高，因此需要减小通道厚度。然而，随着沟道厚度的减小，氧化场效应晶体管（fet）的电性能通常会显著下降。为了系统地研究厚度缩放的影响及其机制，制备了氧化铟镓锌（IGZO）和氧化锌锡（ZTO）场效应管，并分析了它们的电学特性与沟道厚度的关系。在通道厚度为5.1 nm时，ZTO fet的迁移率为37.8 cm2/V·s，在2.7 nm时降至1.43 cm2/V·s，同时在所有厚度上都优于IGZO（比较：5.3 nm: 10.19 cm2/V·s; 2.5 nm: 0.06 cm2/V·s）。为了进一步阐明降解机制，从依赖温度的迁移率测量中提取了与陷阱势垒高度相关的活化能。此外，采用电导法通过电容-电压和电容-频率分析对界面陷阱密度（Dit）进行了量化。结果显示，Dit随沟道厚度的减小而明显增加，在相同厚度下，ZTO fet的Dit值低于IGZO fet，这与它们更高的电性能密切相关。

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引用次数: 0

Research progress of machine learning in flexible strain sensors in the context of material intelligence 材料智能背景下柔性应变传感器机器学习研究进展

IF 9.7 2区材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY

Materials Today Physics

Pub Date : 2025-12-01 DOI: 10.1016/j.mtphys.2025.101932

Jie Li , Zhe Li , Yan Lu , Gang Ye , Yan Hong , Li Niu , Jian Fang

The rapid advancement of smart materials and textiles has accelerated innovation in flexible strain sensors, which are capable of monitoring human motion trajectories, mechanical-acoustic signatures, and various physiological signals. However, the acquisition and interpretation of high-dimensional, high-frequency, and noise-prone signals under real-world conditions pose significant challenges to conventional data processing techniques. Machine learning (ML) has emerged as a powerful tool to enhance the functionality and reliability of flexible strain sensing systems. This review systematically summarizes recent progress in the integration of ML with textile-based flexible strain sensors. It begins with an overview of common sensor types, operating principles, and relevant textile-integrated implementations. Key machine learning algorithms for signal preprocessing, feature extraction, and pattern recognition are then introduced, with an emphasis on their applicability and limitations in handling strain sensing data. The article further examines representative applications across healthcare, assisted living, human–machine communication, and interactive entertainment. Finally, current challenges and future directions are discussed, including sensor design, power efficiency, data processing robustness, and ethical considerations. This review aims to provide insightful perspectives to promote the broader adoption of ML-enhanced flexible sensing systems in smart wearables and intelligent textiles.

智能材料和纺织品的快速发展加速了柔性应变传感器的创新，这些传感器能够监测人体运动轨迹、机械声学特征和各种生理信号。然而，在现实世界条件下，高维、高频和易噪声信号的采集和解释对传统的数据处理技术构成了重大挑战。机器学习（ML）已成为增强柔性应变传感系统功能和可靠性的有力工具。本文系统地综述了机器学习与基于纺织品的柔性应变传感器集成的最新进展。它首先概述了常见的传感器类型、工作原理和相关的纺织品集成实现。然后介绍了用于信号预处理、特征提取和模式识别的关键机器学习算法，重点介绍了它们在处理应变传感数据方面的适用性和局限性。本文进一步研究了医疗保健、辅助生活、人机通信和交互式娱乐等领域的代表性应用程序。最后，讨论了当前的挑战和未来的方向，包括传感器设计，功率效率，数据处理鲁棒性和伦理考虑。本文旨在为促进智能可穿戴设备和智能纺织品中更广泛地采用ml增强的柔性传感系统提供有见地的观点。

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引用次数: 0