Materials Today Physics最新文献_第5页

Design and analysis of an ultra-thin metamaterial absorber for C, X, Ku and K band applications C， X， Ku和K波段超薄超材料吸收体的设计和分析

IF 9.7 2区材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY

Materials Today Physics

Pub Date : 2026-01-01 DOI: 10.1016/j.mtphys.2025.102008

Baoqin Lin, Wenzhun Huang, Zuliang Wang, Kaibo Si, Xiaohua Zhou, Fei Xu

Metamaterial absorbers (MMAs) are a class of artificially engineered materials designed to achieve highly efficient electromagnetic (EM) wave absorption, and a large number of MMAs have been proposed in recent years. However, various existing MMAs often suffer from a trade-off between absorption bandwidth and structural thickness, those capable of achieving ultra-wideband absorption with ultra-thin profiles remain very scarce. To address this bottleneck, this study proposes a dual-layer ultra-thin MMA comprising two layers of periodically patterned resistive films integrated into a grounded dual-layer dielectric substrate. Numerical simulations and experimental verifications demonstrate that the MMA can achieve over 90 % absorption across an ultra-wide frequency range covering C, X, Ku, and K bands under normal incidence of arbitrarily polarized waves, but its total thickness is merely 0.075λ_L (where λ_L denotes the wavelength at the lowest absorption frequency), thus yielding an exceptional bandwidth-to-thickness ratio (BTR) of 11.43—surpassing numerous previous designs reported in recent literature. In addition, the MMA can maintain over 95 % absorption for transverse-magnetic (TM) waves even at incident angles up to 60°. The absorption mechanism of the MMA is theoretically elucidated via interference theory, with results basically consistent with simulations and measurements. The combination of ultra-wideband, ultra-thin profile, polarization insensitivity, and wide-angle stability makes the MMA highly promising for applications in radar stealth and electromagnetic interference suppression.

超材料吸波器是一类为实现高效电磁波吸收而设计的人工工程材料，近年来被大量提出。然而，现有的各种mma往往受到吸收带宽和结构厚度之间的权衡的影响，那些能够以超薄轮廓实现超宽带吸收的mma仍然非常稀缺。为了解决这一瓶颈，本研究提出了一种双层超薄MMA，该MMA由两层周期性图案电阻膜集成到接地的双层介电衬底中。数值模拟和实验验证表明，在任意极化波的正常入射下，MMA可以在覆盖C、X、Ku和K波段的超宽频率范围内实现90%以上的吸收，但其总厚度仅为0.075λL （λL表示最低吸收频率的波长），因此产生了11.43的特殊带宽/厚度比（BTR），超过了最近文献中报道的许多先前设计。此外，即使在入射角度高达60°的情况下，MMA对横磁（TM）波也能保持95%以上的吸收率。通过干涉理论对MMA的吸收机理进行了理论解释，结果与模拟和实测结果基本一致。超宽带、超薄外形、偏振不敏感和广角稳定性的结合使MMA在雷达隐身和电磁干扰抑制方面具有很大的应用前景。

{"title":"Design and analysis of an ultra-thin metamaterial absorber for C, X, Ku and K band applications","authors":"Baoqin Lin, Wenzhun Huang, Zuliang Wang, Kaibo Si, Xiaohua Zhou, Fei Xu","doi":"10.1016/j.mtphys.2025.102008","DOIUrl":"10.1016/j.mtphys.2025.102008","url":null,"abstract":"<div><div>Metamaterial absorbers (MMAs) are a class of artificially engineered materials designed to achieve highly efficient electromagnetic (EM) wave absorption, and a large number of MMAs have been proposed in recent years. However, various existing MMAs often suffer from a trade-off between absorption bandwidth and structural thickness, those capable of achieving ultra-wideband absorption with ultra-thin profiles remain very scarce. To address this bottleneck, this study proposes a dual-layer ultra-thin MMA comprising two layers of periodically patterned resistive films integrated into a grounded dual-layer dielectric substrate. Numerical simulations and experimental verifications demonstrate that the MMA can achieve over 90 % absorption across an ultra-wide frequency range covering C, X, Ku, and K bands under normal incidence of arbitrarily polarized waves, but its total thickness is merely 0.075<em>λ</em><sub>L</sub> (where <em>λ</em><sub>L</sub> denotes the wavelength at the lowest absorption frequency), thus yielding an exceptional bandwidth-to-thickness ratio (BTR) of 11.43—surpassing numerous previous designs reported in recent literature. In addition, the MMA can maintain over 95 % absorption for transverse-magnetic (TM) waves even at incident angles up to 60°. The absorption mechanism of the MMA is theoretically elucidated via interference theory, with results basically consistent with simulations and measurements. The combination of ultra-wideband, ultra-thin profile, polarization insensitivity, and wide-angle stability makes the MMA highly promising for applications in radar stealth and electromagnetic interference suppression.</div></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"60 ","pages":"Article 102008"},"PeriodicalIF":9.7,"publicationDate":"2026-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145880636","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Stable memristive switching mechanism in CeO2/a-Ga2O3 heterostructure toward synaptic plasticity and logical operations CeO2/a-Ga2O3异质结构中突触可塑性和逻辑运算的稳定忆阻开关机制

IF 9.7 2区材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY

Materials Today Physics

Pub Date : 2026-01-01 DOI: 10.1016/j.mtphys.2026.102014

Zhihao Yu, Zhenyang Wang, Fengmin Wu, Chao Wu, Daoyou Guo

Ga₂O₃ has emerged as a highly promising candidate for next-generation memristive materials, owing to its ultra-wide bandgap, exceptional chemical stability, and tunable defect energy states. However, single-layer Ga₂O₃ memristors often suffer from unstable switching voltages caused by the random formation and rupture of conductive filaments, hindering their practical application. In this work, a CeO₂/amorphous-Ga₂O₃ (a-Ga₂O₃) heterostructure memristor with a high oxygen-vacancy gradient was fabricated by employing oxygen-vacancy-rich CeO₂ as an oxygen-vacancy reservoir. The conductance change arises from reversible vacancy migration rather than filament formation in this device, ensuring stable and uniform switching. The device exhibits excellent switching uniformity, with the coefficient of variation for V_set and V_reset as low as 0.18 and 0.15, respectively, which are significantly improved compared with those of the single-layer a-Ga₂O₃ device (0.40 and 0.53, respectively). Moreover, both the HRS and LRS states remain highly stable for up to 10⁴ s under dark conditions. This work provides an effective approach to achieve stable, uniform, and non-filamentary resistive switching in wide-bandgap oxide memristors, paving the way for reliable neuromorphic and logic device applications.

由于其超宽的带隙、优异的化学稳定性和可调的缺陷能态，Ga2O3已成为下一代记忆材料的极有前途的候选者。然而，单层Ga2O3忆阻器由于导电丝的随机形成和断裂，导致开关电压不稳定，阻碍了其实际应用。本文以富氧空位的CeO2为氧空位储层，制备了具有高氧空位梯度的CeO2/非晶ga2o3异质结构忆阻器。在该器件中，电导变化是由可逆空位迁移而不是灯丝形成引起的，从而保证了开关的稳定和均匀。该器件具有优异的开关均匀性，Vset和Vreset的变化系数分别低至0.18和0.15，与单层a-Ga2O3器件（分别为0.40和0.53）相比有显著提高。此外，在黑暗条件下，HRS和LRS状态在长达104 s的时间内保持高度稳定。这项工作为实现宽带隙氧化物忆阻器的稳定、均匀和非丝状电阻开关提供了一种有效的方法，为可靠的神经形态和逻辑器件应用铺平了道路。

{"title":"Stable memristive switching mechanism in CeO2/a-Ga2O3 heterostructure toward synaptic plasticity and logical operations","authors":"Zhihao Yu, Zhenyang Wang, Fengmin Wu, Chao Wu, Daoyou Guo","doi":"10.1016/j.mtphys.2026.102014","DOIUrl":"10.1016/j.mtphys.2026.102014","url":null,"abstract":"<div><div>Ga<sub>2</sub>O<sub>3</sub> has emerged as a highly promising candidate for next-generation memristive materials, owing to its ultra-wide bandgap, exceptional chemical stability, and tunable defect energy states. However, single-layer Ga<sub>2</sub>O<sub>3</sub> memristors often suffer from unstable switching voltages caused by the random formation and rupture of conductive filaments, hindering their practical application. In this work, a CeO<sub>2</sub>/amorphous-Ga<sub>2</sub>O<sub>3</sub> (a-Ga<sub>2</sub>O<sub>3</sub>) heterostructure memristor with a high oxygen-vacancy gradient was fabricated by employing oxygen-vacancy-rich CeO<sub>2</sub> as an oxygen-vacancy reservoir. The conductance change arises from reversible vacancy migration rather than filament formation in this device, ensuring stable and uniform switching. The device exhibits excellent switching uniformity, with the coefficient of variation for V<sub>set</sub> and V<sub>reset</sub> as low as 0.18 and 0.15, respectively, which are significantly improved compared with those of the single-layer a-Ga<sub>2</sub>O<sub>3</sub> device (0.40 and 0.53, respectively). Moreover, both the HRS and LRS states remain highly stable for up to 10<sup>4</sup> s under dark conditions. This work provides an effective approach to achieve stable, uniform, and non-filamentary resistive switching in wide-bandgap oxide memristors, paving the way for reliable neuromorphic and logic device applications.</div></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"60 ","pages":"Article 102014"},"PeriodicalIF":9.7,"publicationDate":"2026-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145956549","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Defect engineering enables ultra-stable radiation-resistant optical transparency in polycrystalline Gd2Zr2O7 ceramics 缺陷工程使多晶Gd2Zr2O7陶瓷具有超稳定的抗辐射光学透明度

IF 9.7 2区材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY

Materials Today Physics

Pub Date : 2026-01-01 DOI: 10.1016/j.mtphys.2025.102009

Lexing Liang , Cong Zhang , Mao Deng , Junjing Duan , Xiaolan Zhou , Zaixin Wei , Kailei Lu , Yanli Shi , Zhangyi Huang , Jianqi Qi , Tiecheng Lu

Highly transparent polycrystalline gadolinium zirconate (Gd₂Zr₂O₇, GZO) ceramics are excellent candidates for mixed gamma (γ) and neutron radiation shielding, but suffer from γ-induced color centers. To address this, we introduce a Ce-doping–mediated defect-engineering strategy, demonstrating that the Ce valence state is the critical switch. We show that Ce⁴⁺-rich (air-annealed) samples exhibit exceptional radiation-hardening, whereas Ce³⁺-rich (vacuum-sintered) samples show catastrophic sensitization. It is confirmed that Ce⁴⁺ acts as a preferential electron trap, competitively suppressing color center formation. As a result, the optimized Ce⁴⁺-rich samples exhibit a γ-induced transmittance loss of less than 4 % (at 100 kGy) and maintain excellent transparency (71.8 % at 450 nm), vastly outperforming commercial ZF6 lead glass (which suffers a 52.6 % loss). Furthermore, GZO:Ce demonstrates 20 % higher γ attenuation (0.373 cm⁻¹ for ⁶⁰Co) and exceptional thermal neutron shielding (cross-section of 688.22 cm⁻¹), combined with excellent mechanical hardness (∼11.5 GPa) and superior corrosion resistance in both acidic and alkaline media. This work establishes Ce-doped GZO as a scalable and durable ceramic platform for γ/n shielding windows, and highlights valence-state and defect engineering as a powerful strategy for the rational design of radiation-tolerant transparent materials.

高透明多晶锆酸钆（Gd2Zr2O7， GZO）陶瓷是混合γ (γ)和中子辐射屏蔽的优秀候选人，但受到γ诱导色心的影响。为了解决这个问题，我们引入了Ce掺杂介导的缺陷工程策略，证明Ce价态是关键开关。我们发现富Ce4+（空气退火）样品表现出异常的辐射硬化，而富Ce3+（真空烧结）样品表现出灾难性的敏化。证实了Ce4+作为优先电子陷阱，竞争性地抑制了色心的形成。结果，优化后的富Ce4+样品显示出γ诱导的透射率损失小于4%（在100 kGy时），并保持良好的透明度（在450 nm时为71.8%），大大优于商用ZF6铅玻璃（其损失为52.6%）。此外，GZO:Ce在酸性和碱性介质中表现出高20%的γ衰减（60Co为0.373 cm−1）和出色的热中子屏蔽（横截面为688.22 cm−1），结合优异的机械硬度（~ 11.5 GPa）和优异的耐腐蚀性。这项工作建立了ce掺杂GZO作为γ/n屏蔽窗口的可扩展和耐用陶瓷平台，并强调了价态和缺陷工程作为合理设计耐辐射透明材料的有力策略。

{"title":"Defect engineering enables ultra-stable radiation-resistant optical transparency in polycrystalline Gd2Zr2O7 ceramics","authors":"Lexing Liang , Cong Zhang , Mao Deng , Junjing Duan , Xiaolan Zhou , Zaixin Wei , Kailei Lu , Yanli Shi , Zhangyi Huang , Jianqi Qi , Tiecheng Lu","doi":"10.1016/j.mtphys.2025.102009","DOIUrl":"10.1016/j.mtphys.2025.102009","url":null,"abstract":"<div><div>Highly transparent polycrystalline gadolinium zirconate (Gd<sub>2</sub>Zr<sub>2</sub>O<sub>7</sub>, GZO) ceramics are excellent candidates for mixed gamma (γ) and neutron radiation shielding, but suffer from γ-induced color centers. To address this, we introduce a Ce-doping–mediated defect-engineering strategy, demonstrating that the Ce valence state is the critical switch. We show that Ce<sup>4+</sup>-rich (air-annealed) samples exhibit exceptional radiation-hardening, whereas Ce<sup>3+</sup>-rich (vacuum-sintered) samples show catastrophic sensitization. It is confirmed that Ce<sup>4+</sup> acts as a preferential electron trap, competitively suppressing color center formation. As a result, the optimized Ce<sup>4+</sup>-rich samples exhibit a γ-induced transmittance loss of less than 4 % (at 100 kGy) and maintain excellent transparency (71.8 % at 450 nm), vastly outperforming commercial ZF6 lead glass (which suffers a 52.6 % loss). Furthermore, GZO:Ce demonstrates 20 % higher γ attenuation (0.373 cm<sup>−1</sup> for <sup>60</sup>Co) and exceptional thermal neutron shielding (cross-section of 688.22 cm<sup>−1</sup>), combined with excellent mechanical hardness (∼11.5 GPa) and superior corrosion resistance in both acidic and alkaline media. This work establishes Ce-doped GZO as a scalable and durable ceramic platform for γ/n shielding windows, and highlights valence-state and defect engineering as a powerful strategy for the rational design of radiation-tolerant transparent materials.</div></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"60 ","pages":"Article 102009"},"PeriodicalIF":9.7,"publicationDate":"2026-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145880637","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Magnetic, transport, and Raman properties of the layered charge density wave antiferromagnet EuTe4 under ambient and high pressures 层状电荷密度波反铁磁体EuTe4在环境和高压下的磁性、输运和拉曼特性

IF 9.7 2区材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY

Materials Today Physics

Pub Date : 2026-01-01 DOI: 10.1016/j.mtphys.2026.102011

Jin Jiang , Shuyang Wang , Chao An , Zhitao Zhang , Langsheng Ling , Yuqiang Liu , Xiaoping Yang , Yonghui Zhou , Xuliang Chen , Zhaorong Yang

We present a comprehensive study of EuTe₄ single crystals using axis-resolved magnetization, electrical transport, electron spin resonance, and Raman spectroscopy at ambient pressure, complemented by high-pressure measurements up to 47.3 GPa. At ambient pressure, EuTe₄ is determined as an A-type antiferromagnet (T_N∼7.1 K) with localized Eu²⁺ spins pointing along the a axis and aligning ferromagnetically within the basal plane and antiferromagnetically along the c axis. A spin-flop transition occurs below T_N at approximately 3/8 of the saturation magnetization when the magnetic field is applied along the a axis, the easy magnetization direction. Pronounced negative magnetoresistance accompanies this field-driven spin reorientation, reminiscent of the giant magnetoresistance effect in artificial magnetic superlattices. The pressure–temperature phase diagram reveals a semiconductor-to-metal transition with the suppression of CDW-related resistivity hysteresis near 4 GPa, a change in the T_N evolution at ∼11 GPa, and an antiferromagnetic-to-nonmagnetic transition near 22 GPa, likely associated with pressure-induced lattice modulations. These results provide crucial insight into the interplay among charge, spin, and lattice degrees of freedom in layered EuTe₄.

我们在环境压力下利用轴分辨磁化、电输运、电子自旋共振和拉曼光谱对EuTe4单晶进行了全面的研究，并通过高达47.3 GPa的高压测量进行了补充。在环境压力下，EuTe4被确定为a型反铁磁体（TN ~ 7.1 K），其局域化Eu2+自旋指向a轴，在基面上呈铁磁排列，并沿c轴呈反铁磁排列。当磁场沿易磁化方向A轴施加时，在饱和磁化强度约为3/8时，在TN以下发生自旋触发器跃迁。明显的负磁阻伴随着磁场驱动的自旋重定向，让人联想到人工磁超晶格中的巨磁阻效应。压力-温度相图揭示了半导体到金属的转变，cdw相关的电阻率滞后在4 GPa附近受到抑制，TN在~ 11 GPa时发生变化，在22 GPa附近发生反铁磁性到非磁性的转变，可能与压力诱导的晶格调制有关。这些结果为层状EuTe4中电荷、自旋和晶格自由度之间的相互作用提供了重要的见解。

{"title":"Magnetic, transport, and Raman properties of the layered charge density wave antiferromagnet EuTe4 under ambient and high pressures","authors":"Jin Jiang , Shuyang Wang , Chao An , Zhitao Zhang , Langsheng Ling , Yuqiang Liu , Xiaoping Yang , Yonghui Zhou , Xuliang Chen , Zhaorong Yang","doi":"10.1016/j.mtphys.2026.102011","DOIUrl":"10.1016/j.mtphys.2026.102011","url":null,"abstract":"<div><div>We present a comprehensive study of EuTe<sub>4</sub> single crystals using axis-resolved magnetization, electrical transport, electron spin resonance, and Raman spectroscopy at ambient pressure, complemented by high-pressure measurements up to 47.3 GPa. At ambient pressure, EuTe<sub>4</sub> is determined as an A-type antiferromagnet (<em>T</em><sub>N</sub>∼7.1 K) with localized Eu<sup>2+</sup> spins pointing along the <em>a</em> axis and aligning ferromagnetically within the basal plane and antiferromagnetically along the <em>c</em> axis. A spin-flop transition occurs below <em>T</em><sub>N</sub> at approximately 3/8 of the saturation magnetization when the magnetic field is applied along the <em>a</em> axis, the easy magnetization direction. Pronounced negative magnetoresistance accompanies this field-driven spin reorientation, reminiscent of the giant magnetoresistance effect in artificial magnetic superlattices. The pressure–temperature phase diagram reveals a semiconductor-to-metal transition with the suppression of CDW-related resistivity hysteresis near 4 GPa, a change in the <em>T</em><sub>N</sub> evolution at ∼11 GPa, and an antiferromagnetic-to-nonmagnetic transition near 22 GPa, likely associated with pressure-induced lattice modulations. These results provide crucial insight into the interplay among charge, spin, and lattice degrees of freedom in layered EuTe<sub>4</sub>.</div></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"60 ","pages":"Article 102011"},"PeriodicalIF":9.7,"publicationDate":"2026-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145925495","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Structuring and patterning approaches for diamond – Toward the third dimension 菱形的结构和图案方法-朝向第三维度

IF 9.7 2区材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY

Materials Today Physics

Pub Date : 2026-01-01 DOI: 10.1016/j.mtphys.2025.101995

Stephan Handschuh-Wang , Zhicheng Xing , Tao Wang

Single crystal diamonds and diamond films are attractive materials for a broad variety of applications due to the intriguing properties of diamond and the ability to tailor the electrical conductivity and surface functionalization. Many applications require a specific roughness, high surface area, a specific 3-dimensional shape, a specific pattern, or a mixture thereof. However, machining, sculpting, and patterning of diamond is challenging due to diamond's growth mechanism, high hardness, wear resistance, and brittleness, rendering machining of diamond arduous. In the last decades, a variety of bottom-up and top-down methods to synthesize diamond with controlled roughness and structures has been established. This review summarizes methods to obtain diamond patterns and diamond films with controlled roughness, microstructures, nanostructures, and porous diamond. Indeed, controlled diamond structures synthesis via both bottom-up and top-down approaches have advanced considerably. The methods themselves are introduced in combination with their merits, detriments, and their capabilities, hinting towards applications of such structures. The discussion is supplemented by recent developments and advances of the controlled synthesis methods. The review is divided into methods for obtaining patterns and structures as well as methods to control the micro- and nanostructure, to control roughness of diamond films, or to obtain ultra-smooth diamond films. This review serves as a timely summary of experimental techniques and recent developments for researchers planning to generate structured or patterned diamond.

单晶金刚石和金刚石薄膜是一种具有广泛应用前景的材料，因为金刚石具有独特的特性和可定制电导率和表面功能化的能力。许多应用需要特定的粗糙度、高表面积、特定的三维形状、特定的图案或其混合物。然而，由于金刚石的生长机制、高硬度、高耐磨性和脆性，使金刚石的加工、雕刻和图案加工具有挑战性。在过去的几十年里，已经建立了各种自下而上和自上而下的方法来合成具有可控粗糙度和结构的金刚石。本文综述了获得金刚石图案、控制粗糙度的金刚石薄膜、微观结构、一维纳米结构和多孔金刚石的方法。事实上，通过自下而上和自上而下的方法合成的可控金刚石结构已经取得了相当大的进展。结合方法本身的优缺点和能力进行了介绍，并对这种结构的应用进行了提示。讨论还补充了控制合成方法的最新发展和进展。本文分为获得模式和结构的方法、控制微纳米结构的方法、控制金刚石膜粗糙度的方法和获得超光滑金刚石膜的方法。这篇综述是对实验技术和最新发展的及时总结，为研究人员计划产生结构或图案钻石。

{"title":"Structuring and patterning approaches for diamond – Toward the third dimension","authors":"Stephan Handschuh-Wang , Zhicheng Xing , Tao Wang","doi":"10.1016/j.mtphys.2025.101995","DOIUrl":"10.1016/j.mtphys.2025.101995","url":null,"abstract":"<div><div>Single crystal diamonds and diamond films are attractive materials for a broad variety of applications due to the intriguing properties of diamond and the ability to tailor the electrical conductivity and surface functionalization. Many applications require a specific roughness, high surface area, a specific 3-dimensional shape, a specific pattern, or a mixture thereof. However, machining, sculpting, and patterning of diamond is challenging due to diamond's growth mechanism, high hardness, wear resistance, and brittleness, rendering machining of diamond arduous. In the last decades, a variety of bottom-up and top-down methods to synthesize diamond with controlled roughness and structures has been established. This review summarizes methods to obtain diamond patterns and diamond films with controlled roughness, microstructures, nanostructures, and porous diamond. Indeed, controlled diamond structures synthesis via both bottom-up and top-down approaches have advanced considerably. The methods themselves are introduced in combination with their merits, detriments, and their capabilities, hinting towards applications of such structures. The discussion is supplemented by recent developments and advances of the controlled synthesis methods. The review is divided into methods for obtaining patterns and structures as well as methods to control the micro- and nanostructure, to control roughness of diamond films, or to obtain ultra-smooth diamond films. This review serves as a timely summary of experimental techniques and recent developments for researchers planning to generate structured or patterned diamond.</div></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"60 ","pages":"Article 101995"},"PeriodicalIF":9.7,"publicationDate":"2026-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145813649","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Integrated micromagnetics-domain-magnetization analysis unveils the characteristic pinning behavior in hot-deformed Nd-Fe-B magnets 集成微磁-域磁化分析揭示了热变形钕铁硼磁体的特征钉钉行为

IF 9.7 2区材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY

Materials Today Physics

Pub Date : 2026-01-01 DOI: 10.1016/j.mtphys.2025.101999

Yuqing Li , Yan Pan , Hanfei Liu , Lingqi Liu , Mengying Bian , Weiqiang Liu , Weixing Xia , Ming Yue

Hot-deformed (HD) Nd-Fe-B magnets achieve high coercivity by grain boundary pinning the domain wall motion due to the fine grain size. A thorough understanding of this pinning behavior can guide the leveraging of this advantage to achieve high-coercivity magnets without heavy rare earths. This work investigated the pinning behavior during magnetization and demagnetization of a typical HD Nd-Fe-B magnet by combining micromagnetic simulations, dynamic domain observation, and macroscopic technical magnetization analysis. Micromagnetic simulations reveal a variety of heterogeneous pinning sites. Combined with domain wall energy analysis, this provides a new perspective on the straight, trans-granular domain walls observed at the thermal demagnetization state. Domain evolution and the macroscopic magnetization analysis describe how the reversible portion transforms into the irreversible portion in the magnetization process in a low magnetic field, and further demonstrate the coexistence of asymmetric, weak, and strong pinning. Based on these findings, we argue that both the positive δm peaks and the open recoil loops in HD Nd-Fe-B magnets stem from their characteristic pinning behavior. The former arises because the initial states for magnetization and demagnetization differ. Hence, domain walls enter strong pinning sites at different stages, whereas the latter occurs because weak pinning sites impede reversible domain wall motion. Our findings enrich the coercivity theory of permanent magnetic materials by elucidating domain-wall pinning mechanisms at the sub-micrometer scale and provide a reliable reference for developing high-coercivity magnets.

热变形钕铁硼磁体由于晶粒尺寸细小，通过晶界钉住畴壁运动而获得高矫顽力。对这种钉住行为的透彻理解可以指导利用这一优势来实现不含重稀土的高矫顽力磁体。本文采用微磁模拟、动态畴观测和宏观技术磁化分析相结合的方法，研究了典型HD Nd-Fe-B磁体在磁化和退磁过程中的钉钉行为。微磁模拟显示了多种异质钉钉位点。结合畴壁能量分析，为热退磁状态下观察到的直晶畴壁提供了新的视角。畴演化和宏观磁化分析描述了在低磁场下磁化过程中可逆部分向不可逆部分转变的过程，进一步证明了不对称、弱、强钉钉的共存。基于这些发现，我们认为HD Nd-Fe-B磁体的正δm峰和开放反冲回路都源于其特有的钉钉行为。前者的产生是因为磁化和退磁的初始状态不同。因此，结构域壁在不同阶段进入强钉钉位点，而后者的发生是因为弱钉钉位点阻碍了可逆的结构域壁运动。我们的发现丰富了永磁材料的矫顽力理论，在亚微米尺度上阐明了畴壁钉钉机理，为开发高矫顽力磁体提供了可靠的参考。

{"title":"Integrated micromagnetics-domain-magnetization analysis unveils the characteristic pinning behavior in hot-deformed Nd-Fe-B magnets","authors":"Yuqing Li , Yan Pan , Hanfei Liu , Lingqi Liu , Mengying Bian , Weiqiang Liu , Weixing Xia , Ming Yue","doi":"10.1016/j.mtphys.2025.101999","DOIUrl":"10.1016/j.mtphys.2025.101999","url":null,"abstract":"<div><div>Hot-deformed (HD) Nd-Fe-B magnets achieve high coercivity by grain boundary pinning the domain wall motion due to the fine grain size. A thorough understanding of this pinning behavior can guide the leveraging of this advantage to achieve high-coercivity magnets without heavy rare earths. This work investigated the pinning behavior during magnetization and demagnetization of a typical HD Nd-Fe-B magnet by combining micromagnetic simulations, dynamic domain observation, and macroscopic technical magnetization analysis. Micromagnetic simulations reveal a variety of heterogeneous pinning sites. Combined with domain wall energy analysis, this provides a new perspective on the straight, trans-granular domain walls observed at the thermal demagnetization state. Domain evolution and the macroscopic magnetization analysis describe how the reversible portion transforms into the irreversible portion in the magnetization process in a low magnetic field, and further demonstrate the coexistence of asymmetric, weak, and strong pinning. Based on these findings, we argue that both the positive <em>δm</em> peaks and the open recoil loops in HD Nd-Fe-B magnets stem from their characteristic pinning behavior. The former arises because the initial states for magnetization and demagnetization differ. Hence, domain walls enter strong pinning sites at different stages, whereas the latter occurs because weak pinning sites impede reversible domain wall motion. Our findings enrich the coercivity theory of permanent magnetic materials by elucidating domain-wall pinning mechanisms at the sub-micrometer scale and provide a reliable reference for developing high-coercivity magnets.</div></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"60 ","pages":"Article 101999"},"PeriodicalIF":9.7,"publicationDate":"2026-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145823726","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Ultrafast self-powered solar blind UV photodetectors based on amorphous Ga2O3 thin films in crossbar geometry 基于横杆非晶Ga2O3薄膜的超快自供电太阳盲紫外光电探测器

IF 9.7 2区材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY

Materials Today Physics

Pub Date : 2026-01-01 DOI: 10.1016/j.mtphys.2025.102007

Amit K. Das , Vikas Kumar Sahu , R.S. Ajimsha , Sunil Verma , Pankaj Misra

Amorphous gallium oxide (a-Ga₂O₃) based UV photodetectors combine the benefits of low growth temperature, large-area processibility and use of flexible, inexpensive substrates with performance comparable to their crystalline counterparts. Despite these advantages, their photoresponse time is notably slower. To mitigate this, ultrafast vertical Schottky type Au/a-Ga₂O₃/ITO solar blind ultraviolet photodetectors have been developed in crossbar geometry, wherein the a-Ga₂O₃ thin film, deposited by RF magnetron sputtering, is sandwiched between the bottom ITO and orthogonal top semi-transparent Au Schottky electrodes. The device sizes vary from ∼8 to 12 mm². The temporal UV photoresponse measurement of the devices at zero bias shows ultrafast response with both rise and fall times of ∼2 μs, which is the fastest reported till date for a-Ga₂O₃ based UV photodetectors. The zero bias spectral responsivity measurement reveals that the responsivity peaks at 250 nm with the cut-off at 273 nm. The maximum self-powered spectral responsivity of ∼14 mA/W obtained in these crossbar devices is comparable to that of a-Ga₂O₃ based devices reported in literature. These crossbar Au/a-Ga₂O₃/ITO devices showing ultrafast self-powered solar blind UV photoresponse are promising for applications requiring fast solar blind UV detectors such as UV communication, imaging, missile plume detection etc.

基于非晶氧化镓（a-Ga2O3）的紫外光电探测器结合了低生长温度、大面积可加工性和使用柔性、廉价衬底的优点，其性能可与晶体相媲美。尽管有这些优点，它们的光响应时间明显较慢。为了减轻这一问题，在横杆几何结构中开发了超快垂直肖特基型Au/a-Ga2O3/ITO太阳盲紫外光电探测器，其中，通过射频磁控溅射沉积的a-Ga2O3薄膜夹在底部ITO和正交顶部半透明Au - Schottky电极之间。器件尺寸从~ 8到12mm2不等。器件在零偏置下的时间紫外光响应测量显示出超快的响应，上升和下降时间均为~ 2 μs，这是迄今为止报道的基于a-Ga2O3的紫外光电探测器中最快的。零偏光谱响应率测量表明，响应率在250 nm处达到峰值，截止点为273 nm。在这些交叉棒器件中获得的最大自供电光谱响应率为~ 14 mA/W，与文献中报道的基于a-Ga2O3的器件相当。这些横条Au/a-Ga2O3/ITO器件显示了超快的自供电太阳盲紫外光响应，对于需要快速太阳盲紫外探测器的应用，如紫外通信、成像、导弹羽流探测等，具有很大的前景。

{"title":"Ultrafast self-powered solar blind UV photodetectors based on amorphous Ga2O3 thin films in crossbar geometry","authors":"Amit K. Das , Vikas Kumar Sahu , R.S. Ajimsha , Sunil Verma , Pankaj Misra","doi":"10.1016/j.mtphys.2025.102007","DOIUrl":"10.1016/j.mtphys.2025.102007","url":null,"abstract":"<div><div>Amorphous gallium oxide (<em>a</em>-Ga<sub>2</sub>O<sub>3</sub>) based UV photodetectors combine the benefits of low growth temperature, large-area processibility and use of flexible, inexpensive substrates with performance comparable to their crystalline counterparts. Despite these advantages, their photoresponse time is notably slower. To mitigate this, ultrafast vertical Schottky type Au/<em>a</em>-Ga<sub>2</sub>O<sub>3</sub>/ITO solar blind ultraviolet photodetectors have been developed in crossbar geometry, wherein the <em>a</em>-Ga<sub>2</sub>O<sub>3</sub> thin film, deposited by RF magnetron sputtering, is sandwiched between the bottom ITO and orthogonal top semi-transparent Au Schottky electrodes. The device sizes vary from ∼8 to 12 mm<sup>2</sup>. The temporal UV photoresponse measurement of the devices at zero bias shows ultrafast response with both rise and fall times of ∼2 μs, which is the fastest reported till date for <em>a</em>-Ga<sub>2</sub>O<sub>3</sub> based UV photodetectors. The zero bias spectral responsivity measurement reveals that the responsivity peaks at 250 nm with the cut-off at 273 nm. The maximum self-powered spectral responsivity of ∼14 mA/W obtained in these crossbar devices is comparable to that of <em>a</em>-Ga<sub>2</sub>O<sub>3</sub> based devices reported in literature. These crossbar Au/<em>a</em>-Ga<sub>2</sub>O<sub>3</sub>/ITO devices showing ultrafast self-powered solar blind UV photoresponse are promising for applications requiring fast solar blind UV detectors such as UV communication, imaging, missile plume detection etc.</div></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"60 ","pages":"Article 102007"},"PeriodicalIF":9.7,"publicationDate":"2026-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145880635","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Realizing overall trade-off of giant caloric effect, wide working temperature range and ultrahigh cyclic stability in Ni-Co-Mn-Ti-B multiferroic phase transformation alloy 实现了Ni-Co-Mn-Ti-B多铁相变合金巨热效应、宽工作温度范围和超高循环稳定性的综合权衡

IF 9.7 2区材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY

Materials Today Physics

Pub Date : 2026-01-01 DOI: 10.1016/j.mtphys.2025.102001

Ziqi Guan , Haoxuan Liu , Hongyuan Tang , Yanze Wu , Xiaowen Hao , Zhenzhuang Li , Jing Bai , Yafei Kuang , Xing Lu , Liang Zuo

Solid-state refrigeration materials have attracted considerable attention due to their promising applications in low-carbon refrigeration technology. Given that the refrigeration performances of solid-state refrigeration materials are intrinsically correlated or even inversely related, an overall trade-off is necessitated. Here, we present a directionally solidified (Ni₃₇Co₁₃Mn_33.8Ti_16.2)_98.7B_1.3 alloy that exhibits outstanding comprehensive properties. Its fracture compressive strain and strength are 19.0 % and 2454 MPa at room temperature, respectively. Under external field excitation, the alloy demonstrates a giant elastocaloric adiabatic temperature change of 30.1 K and can also yield a large magnetic entropy change of 33.7 J kg⁻¹ K⁻¹. More importantly, the combination of multiple caloric effects extends the working temperature range of the present alloy over 240 K. Furthermore, a large elastocaloric adiabatic temperature change between loading and unloading during fatigue is about 11 K and can be maintained for more than 73,000 cycles. Experimental and first-principles calculations reveal that the outstanding comprehensive properties of the present alloy are primarily attributed to the synergistic interaction of large lattice vibration entropy, strong preferred orientation, second phase strengthening, and grain boundary strengthening. Such a combination renders the present alloy state-of-the-art refrigeration functional behavior and is expected to benefit the practical applications of solid-state refrigeration.

固态制冷材料因其在低碳制冷技术中的应用前景而备受关注。鉴于固态制冷材料的制冷性能是内在相关的，甚至是负相关的，因此需要一个整体的权衡。本文制备了一种具有优异综合性能的定向凝固（Ni37Co13Mn33.8Ti16.2）98.7B1.3合金。室温下，其断裂抗压应变和强度分别为19.0%和2454 MPa。在外场激励下，合金表现出30.1 K的巨大热弹性绝热温度变化和33.7 J kg−1 K−1的大磁熵变化。更重要的是，多种热效应的结合将合金的工作温度范围扩大到240 K以上。此外，在疲劳期间，加载和卸载之间的大弹性热绝热温度变化约为11 K，可以保持超过73,000次循环。实验和第一性原理计算表明，大晶格振动熵、强择优取向、第二相强化和晶界强化的协同作用是合金优异的综合性能的主要原因。这样的组合使目前的合金具有最先进的制冷功能行为，并有望有利于固态制冷的实际应用。

{"title":"Realizing overall trade-off of giant caloric effect, wide working temperature range and ultrahigh cyclic stability in Ni-Co-Mn-Ti-B multiferroic phase transformation alloy","authors":"Ziqi Guan , Haoxuan Liu , Hongyuan Tang , Yanze Wu , Xiaowen Hao , Zhenzhuang Li , Jing Bai , Yafei Kuang , Xing Lu , Liang Zuo","doi":"10.1016/j.mtphys.2025.102001","DOIUrl":"10.1016/j.mtphys.2025.102001","url":null,"abstract":"<div><div>Solid-state refrigeration materials have attracted considerable attention due to their promising applications in low-carbon refrigeration technology. Given that the refrigeration performances of solid-state refrigeration materials are intrinsically correlated or even inversely related, an overall trade-off is necessitated. Here, we present a directionally solidified (Ni<sub>37</sub>Co<sub>13</sub>Mn<sub>33.8</sub>Ti<sub>16.2</sub>)<sub>98.7</sub>B<sub>1.3</sub> alloy that exhibits outstanding comprehensive properties. Its fracture compressive strain and strength are 19.0 % and 2454 MPa at room temperature, respectively. Under external field excitation, the alloy demonstrates a giant elastocaloric adiabatic temperature change of 30.1 K and can also yield a large magnetic entropy change of 33.7 J kg<sup>−1</sup> K<sup>−1</sup>. More importantly, the combination of multiple caloric effects extends the working temperature range of the present alloy over 240 K. Furthermore, a large elastocaloric adiabatic temperature change between loading and unloading during fatigue is about 11 K and can be maintained for more than 73,000 cycles. Experimental and first-principles calculations reveal that the outstanding comprehensive properties of the present alloy are primarily attributed to the synergistic interaction of large lattice vibration entropy, strong preferred orientation, second phase strengthening, and grain boundary strengthening. Such a combination renders the present alloy state-of-the-art refrigeration functional behavior and is expected to benefit the practical applications of solid-state refrigeration.</div></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"60 ","pages":"Article 102001"},"PeriodicalIF":9.7,"publicationDate":"2026-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145822858","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Observation of ultra-long range topological proximity effect induced by interfacial band inversion 界面带反演引起的超远程拓扑邻近效应的观察

IF 9.7 2区材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY

Materials Today Physics

Pub Date : 2026-01-01 DOI: 10.1016/j.mtphys.2026.102012

Bin Li , Qiangsheng Lu , Xiangbin Cai , Shuigang Xu , Yipu Xia , Wingkin Ho , Ning Wang , Chang Liu , Maohai Xie

A topological phase transition (TPT) is realized in rhombohedral Sb

_{2}

Se

_{3}

via interfacial proximity. Molecular beam epitaxy (MBE) enables the epitaxial growth of Sb

_{2}

Se

_{3}

on Bi

_{2}

Se

_{3}

, a strong topological insulator (STI), and on In

_{2}

Se

_{3}

, an ordinary insulator (OI). Angle-resolved photoemission spectroscopy (ARPES) reveals a Dirac cone in Sb

_{2}

Se

_{3}

/Bi

_{2}

Se

_{3}

up to 15 nm thickness, in dramatic contrast to the full bandgap observed in Sb

_{2}

Se

_{3}

/In

_{2}

Se

_{3}

. Structural characterization confirms strain-free interfaces and identical crystal phases. A

k \cdot p

model has been developed to interpret the ultra-long range proximity effect. These results demonstrate ultra-long range topological order propagation driven by interfacial band hybridization, resolving longstanding debates on the energy band topology of Sb

_{2}

Se

_{3}

and establishing heterostructuring as a route to engineer quantum phases.

在菱面体Sb2Se3中，通过界面接近实现了拓扑相变。分子束外延（MBE）可以使Sb2Se3在强拓扑绝缘体Bi2Se3 （STI）和普通绝缘体In2Se3 （OI）上外延生长。角分辨光发射光谱（ARPES）显示，Sb2Se3/Bi2Se3中存在厚度达15 nm的狄拉克锥，与Sb2Se3/In2Se3中观察到的全带隙形成鲜明对比。结构表征证实了无应变界面和相同的晶相。建立了一个k⋅p模型来解释超远程接近效应。这些结果证明了界面带杂化驱动的超长距离拓扑顺序传播，解决了Sb2Se3的能带拓扑结构的长期争论，并建立了异质结构作为工程量子相的途径。

引用次数: 0

Enhancing outcoupling of near-field radiative heat transfer via magnetic dipole resonance 磁偶极子共振增强近场辐射传热的脱耦性

IF 9.7 2区材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY

Materials Today Physics

Pub Date : 2026-01-01 DOI: 10.1016/j.mtphys.2025.101990

Wei-Hsuan Kung , Wei-Hsuan Huang , Bo-Yi Chen , Yu-Chen Chen , Shu-Hsien Chen , Hsuen-Li Chen

The near-field radiative heat transfer (NFRHT) between materials is crucial in near-field applications. In this study, near-field thermal radiation was generated by the interaction of surface phonon polaritons (SPhPs) with magnetic dipole resonances. The results revealed that the emission enhancement far exceeded the levels expected from a low coverage of Si particles. Moreover, adjusting the particle size enhanced the emission of different polar materials. The experimental results revealed that only 1.7 % Si-particle surface coverage could enhance the average emissivity of SiC within the Reststrahlen band by 2.47 times. The simulation and experimental results indicate that Si particles could successfully outcouple energy with the SPhPs of polar materials in the near-field range, and then scatter electromagnetic energy to the far field. This study demonstrated that spin coating with Si particles is a simple, low-cost, and nondestructive method for effectively increasing surface emission. This Si-based thermal radiant antenna holds strong potential for application to far-field emissions of near-field energy from polar materials.

材料间的近场辐射传热在近场应用中具有重要意义。在本研究中，近场热辐射是由表面声子极化子（SPhPs）与磁偶极子共振相互作用产生的。结果表明，发射增强远远超过了低硅颗粒覆盖率的预期水平。此外，调整颗粒尺寸可以增强不同极性材料的发射。实验结果表明，仅1.7%的硅颗粒表面覆盖率就可以使SiC在Reststrahlen波段内的平均发射率提高2.47倍。仿真和实验结果表明，硅粒子能够在近场范围内成功地与极性材料的SPhPs脱偶，从而将电磁能量散射到远场。该研究表明，硅粒子自旋涂层是一种简单、低成本、无损的有效提高表面发射的方法。这种硅基热辐射天线在极性材料的近场能量远场发射中具有很强的应用潜力。

{"title":"Enhancing outcoupling of near-field radiative heat transfer via magnetic dipole resonance","authors":"Wei-Hsuan Kung , Wei-Hsuan Huang , Bo-Yi Chen , Yu-Chen Chen , Shu-Hsien Chen , Hsuen-Li Chen","doi":"10.1016/j.mtphys.2025.101990","DOIUrl":"10.1016/j.mtphys.2025.101990","url":null,"abstract":"<div><div>The near-field radiative heat transfer (NFRHT) between materials is crucial in near-field applications. In this study, near-field thermal radiation was generated by the interaction of surface phonon polaritons (SPhPs) with magnetic dipole resonances. The results revealed that the emission enhancement far exceeded the levels expected from a low coverage of Si particles. Moreover, adjusting the particle size enhanced the emission of different polar materials. The experimental results revealed that only 1.7 % Si-particle surface coverage could enhance the average emissivity of SiC within the Reststrahlen band by 2.47 times. The simulation and experimental results indicate that Si particles could successfully outcouple energy with the SPhPs of polar materials in the near-field range, and then scatter electromagnetic energy to the far field. This study demonstrated that spin coating with Si particles is a simple, low-cost, and nondestructive method for effectively increasing surface emission. This Si-based thermal radiant antenna holds strong potential for application to far-field emissions of near-field energy from polar materials.</div></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"60 ","pages":"Article 101990"},"PeriodicalIF":9.7,"publicationDate":"2026-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145786018","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0