Pub Date : 2025-12-03DOI: 10.1016/j.mtphys.2025.101971
Ehsan Alibagheri , Mohammad Sandoghchi , Alireza Seyfi , Mohammad Khazaei , S. Mehdi Vaez Allaei
Superconducting materials hold transformative potential for quantum technologies and energy systems. Still, their discovery is hindered by the complexity of traditional computational methods and the limited scope of existing machine learning (ML) models. We introduce a physics-informed (PI) machine learning framework that predicts critical transition temperatures (Tc) across all superconductor families, including both conventional and unconventional ones. By engineering 33 quantum-mechanically PI descriptors (e.g., CuO2 layers for cuprates, Fe_layer separation for iron-based systems, and electron concentration for conventional superconductors and …), besides the compositional descriptors, our “SuperConNet” classifier achieves near-perfect 99.94 % accuracy in categorizing superconductors and precise Tc prediction. Trained on 17,820 known superconductors, which we labeled in four classes and validated against unseen materials from the Inorganic Crystal Structure Database (ICSD), our approach outperforms BCS theory and density functional theory (DFT) in both speed and generality. Crucially, SHAP analysis reveals how descriptors isolate pairing mechanisms, while DFT cross-validation confirms physical soundness. This work spans materials chemistry with quantum physics, modifying the search for high-Tc superconductors beyond narrow material classes.
{"title":"A physics-informed machine learning framework for unified prediction of superconducting transition temperatures","authors":"Ehsan Alibagheri , Mohammad Sandoghchi , Alireza Seyfi , Mohammad Khazaei , S. Mehdi Vaez Allaei","doi":"10.1016/j.mtphys.2025.101971","DOIUrl":"10.1016/j.mtphys.2025.101971","url":null,"abstract":"<div><div>Superconducting materials hold transformative potential for quantum technologies and energy systems. Still, their discovery is hindered by the complexity of traditional computational methods and the limited scope of existing machine learning (ML) models. We introduce a physics-informed (PI) machine learning framework that predicts critical transition temperatures (T<sub>c</sub>) across all superconductor families, including both conventional and unconventional ones. By engineering 33 quantum-mechanically PI descriptors (e.g., CuO<sub>2</sub> layers for cuprates, Fe_layer separation for iron-based systems, and electron concentration for conventional superconductors and …), besides the compositional descriptors, our “SuperConNet” classifier achieves near-perfect 99.94 % accuracy in categorizing superconductors and precise T<sub>c</sub> prediction. Trained on 17,820 known superconductors, which we labeled in four classes and validated against unseen materials from the Inorganic Crystal Structure Database (ICSD), our approach outperforms BCS theory and density functional theory (DFT) in both speed and generality. Crucially, SHAP analysis reveals how descriptors isolate pairing mechanisms, while DFT cross-validation confirms physical soundness. This work spans materials chemistry with quantum physics, modifying the search for high-T<sub>c</sub> superconductors beyond narrow material classes.</div></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"60 ","pages":"Article 101971"},"PeriodicalIF":9.7,"publicationDate":"2025-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145673592","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-12-02DOI: 10.1016/j.mtphys.2025.101963
Han Liu , Yuanjun Liu
Currently, to address the impacts of electromagnetic wave pollution on human health, wireless devices, precision instruments, military security, and other areas, the development of efficient, lightweight, and broadband electromagnetic wave absorption (EMA) materials has become a research hotspot in the field of materials science. MXene, as a novel two-dimensional material, demonstrates immense potential in electromagnetic wave absorption owing to its unique layered structure, abundant active functional groups, excellent electrical conductivity, and high specific surface area. This paper provides a comprehensive and systematic review of the latest research progress in MXene and its composite materials for electromagnetic wave absorption applications. Firstly, this paper provides an overview of the optimization effects of modification strategies such as porosification and interlayer spacing adjustment on the electromagnetic wave absorption performance of monolithic MXene materials. Subsequently, it focuses on elucidating the design principles and performance advantages of MXene-based binary, ternary, and quaternary or higher-order composite materials. Among them, 3D networks, hollow structures, core-shell structures, and layered heterostructures significantly enhance electromagnetic wave absorption performance by improving impedance matching, enhancing interfacial polarization, and multiple reflections. When synergized with multicomponent composites, they achieve multi-mechanism loss of electromagnetic waves through dielectric-magnetic synergy, interfacial polarization, and conductive network construction, significantly enhancing electromagnetic wave absorption intensity and bandwidth. Meanwhile, this paper also points out the challenges faced by MXene-based electromagnetic wave absorption materials, such as poor impedance matching and the difficulty in balancing multiple performance indicators within a single system. Future research should focus on quantitative analysis of loss mechanisms, regulation of heterogeneous interfaces, and development of smart responsive materials, providing references for the rational design and practical application of high-performance MXene-based electromagnetic wave absorption materials.
{"title":"Recent research progress of MXene and its composites in the field of electromagnetic wave absorption","authors":"Han Liu , Yuanjun Liu","doi":"10.1016/j.mtphys.2025.101963","DOIUrl":"10.1016/j.mtphys.2025.101963","url":null,"abstract":"<div><div>Currently, to address the impacts of electromagnetic wave pollution on human health, wireless devices, precision instruments, military security, and other areas, the development of efficient, lightweight, and broadband electromagnetic wave absorption (EMA) materials has become a research hotspot in the field of materials science. MXene, as a novel two-dimensional material, demonstrates immense potential in electromagnetic wave absorption owing to its unique layered structure, abundant active functional groups, excellent electrical conductivity, and high specific surface area. This paper provides a comprehensive and systematic review of the latest research progress in MXene and its composite materials for electromagnetic wave absorption applications. Firstly, this paper provides an overview of the optimization effects of modification strategies such as porosification and interlayer spacing adjustment on the electromagnetic wave absorption performance of monolithic MXene materials. Subsequently, it focuses on elucidating the design principles and performance advantages of MXene-based binary, ternary, and quaternary or higher-order composite materials. Among them, 3D networks, hollow structures, core-shell structures, and layered heterostructures significantly enhance electromagnetic wave absorption performance by improving impedance matching, enhancing interfacial polarization, and multiple reflections. When synergized with multicomponent composites, they achieve multi-mechanism loss of electromagnetic waves through dielectric-magnetic synergy, interfacial polarization, and conductive network construction, significantly enhancing electromagnetic wave absorption intensity and bandwidth. Meanwhile, this paper also points out the challenges faced by MXene-based electromagnetic wave absorption materials, such as poor impedance matching and the difficulty in balancing multiple performance indicators within a single system. Future research should focus on quantitative analysis of loss mechanisms, regulation of heterogeneous interfaces, and development of smart responsive materials, providing references for the rational design and practical application of high-performance MXene-based electromagnetic wave absorption materials.</div></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"60 ","pages":"Article 101963"},"PeriodicalIF":9.7,"publicationDate":"2025-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145651305","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Fibrous polyimide (PI) based air filters have emerged as leading candidates for high-performance filtration in extreme environments due to their exceptional thermal stability, mechanical robustness, and chemical resistance. Despite extensive research on fibrous filtration media and PI materials, a comprehensive synthesis of their combined potential in high-temperature air filtration has been lacking. This review bridges that gap by comprehensively analyzing fabrication strategies, including electrospinning, blow spinning, and composite engineering, and their influence on microstructure, functional properties, and filtration performance. We highlight the role of morphology control, multilayer architectures, and chemical modification (e.g., incorporation of polymers, carbon nanomaterials, metal–organic frameworks, and silicon-based additives) in enhancing efficiency, pressure drop, and multifunctionality. Special emphasis is placed on thermal resistance, with PI-based filters demonstrating decomposition temperatures typically above 500 °C and stable operation approaching 400 °C, far surpassing conventional polymers such as PAN, PVDF, and PP. The review also elucidates trade-offs between functional enhancements and thermal endurance, underscoring the importance of monomer selection, composite formulation, and structural design. By consolidating performance data and identifying key structure–property relationships, this work provides a critical foundation for developing next generation PI-based filtration systems capable of sustained operation in high temperature, chemically aggressive, and particulate-rich environments.
{"title":"High-temperature performance of fibrous polyimide air filters","authors":"Ali Jafari , Mostafa Jafari Zaveh , Mahdi Jafari Nodoushan , Farideh Golbabaei","doi":"10.1016/j.mtphys.2025.101966","DOIUrl":"10.1016/j.mtphys.2025.101966","url":null,"abstract":"<div><div>Fibrous polyimide (PI) based air filters have emerged as leading candidates for high-performance filtration in extreme environments due to their exceptional thermal stability, mechanical robustness, and chemical resistance. Despite extensive research on fibrous filtration media and PI materials, a comprehensive synthesis of their combined potential in high-temperature air filtration has been lacking. This review bridges that gap by comprehensively analyzing fabrication strategies, including electrospinning, blow spinning, and composite engineering, and their influence on microstructure, functional properties, and filtration performance. We highlight the role of morphology control, multilayer architectures, and chemical modification (e.g., incorporation of polymers, carbon nanomaterials, metal–organic frameworks, and silicon-based additives) in enhancing efficiency, pressure drop, and multifunctionality. Special emphasis is placed on thermal resistance, with PI-based filters demonstrating decomposition temperatures typically above 500 °C and stable operation approaching 400 °C, far surpassing conventional polymers such as PAN, PVDF, and PP. The review also elucidates trade-offs between functional enhancements and thermal endurance, underscoring the importance of monomer selection, composite formulation, and structural design. By consolidating performance data and identifying key structure–property relationships, this work provides a critical foundation for developing next generation PI-based filtration systems capable of sustained operation in high temperature, chemically aggressive, and particulate-rich environments.</div></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"60 ","pages":"Article 101966"},"PeriodicalIF":9.7,"publicationDate":"2025-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145657436","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
<div><div>We present an integrated quantum-to-device-to-data framework for rational bandgap engineering of compositionally graded Ba(Hf<span><math><msub><mrow></mrow><mrow><mn>1</mn><mo>−</mo><mi>x</mi></mrow></msub></math></span>Zr<span><math><msub><mrow></mrow><mrow><mi>x</mi></mrow></msub></math></span>)S<span><math><msub><mrow></mrow><mrow><mn>3</mn></mrow></msub></math></span> absorbers and its impact on photovoltaic performance. Starting from a quantum-mechanical foundation (Bloch states, virtual crystal approximation, and bowing), four analytic grading laws (linear, parabolic, power-law, and logarithmic) were implemented in SCAPS-1D at 300 K and exhaustively explored via batch simulations by varying absorber thickness (0.1–1.0 <span><math><mi>μ</mi></math></span>m), left-end composition (<span><math><mrow><mi>x</mi><mo>=</mo><mn>0</mn></mrow></math></span>–1), and a profile-specific parameter (uniform <span><math><msub><mrow><mi>N</mi></mrow><mrow><mi>D</mi></mrow></msub></math></span> for linear/logarithmic; bowing factor <span><math><mi>b</mi></math></span> for parabolic; exponent <span><math><mi>m</mi></math></span> for power-law). Multi-dimensional contour maps of power conversion efficiency (<span><math><mi>η</mi></math></span>), open-circuit voltage (<span><math><msub><mrow><mi>V</mi></mrow><mrow><mi>OC</mi></mrow></msub></math></span>), short-circuit current density (<span><math><msub><mrow><mi>J</mi></mrow><mrow><mi>SC</mi></mrow></msub></math></span>), and fill factor (FF) were used to identify optimized device architectures; the best-performing designs (linear: <span><math><mrow><mi>η</mi><mo>=</mo><mn>24</mn><mo>.</mo><mn>22</mn><mtext>%</mtext></mrow></math></span>, parabolic: <span><math><mrow><mi>η</mi><mo>=</mo><mn>25</mn><mo>.</mo><mn>08</mn><mtext>%</mtext></mrow></math></span>, power-law: <span><math><mrow><mi>η</mi><mo>=</mo><mn>25</mn><mo>.</mo><mn>45</mn><mtext>%</mtext></mrow></math></span>, logarithmic: <span><math><mrow><mi>η</mi><mo>=</mo><mn>18</mn><mo>.</mo><mn>52</mn><mtext>%</mtext></mrow></math></span>) were analyzed through spatial band diagrams, <span><math><mi>J</mi></math></span>–<span><math><mi>V</mi></math></span>/EQE responses, and generation–recombination profiles. The optical and transport implications of grading were interpreted using relations such as the absorption edge <span><math><mrow><msub><mrow><mi>λ</mi></mrow><mrow><mi>c</mi></mrow></msub><mo>=</mo><mn>1239</mn><mo>.</mo><mn>8</mn><mo>/</mo><msub><mrow><mi>E</mi></mrow><mrow><mi>g</mi></mrow></msub></mrow></math></span>, penetration depth <span><math><mrow><mi>d</mi><mo>=</mo><mn>1</mn><mo>/</mo><mi>α</mi></mrow></math></span>, and the graded quasi-electric field <span><math><mrow><msub><mrow><mi>E</mi></mrow><mrow><mi>grad</mi></mrow></msub><mo>=</mo><mo>−</mo><mfrac><mrow><mn>1</mn></mrow><mrow><mi>q</mi></mrow></mfrac><mfrac><mrow><mi>d</mi><msub><mrow><mi>E</mi></mrow><mrow><mi>c</mi></mrow></msub></mrow><mrow><mi>d</mi><mi>y</mi></mrow>
{"title":"A unified statistical perspective on bandgap engineering across the Ba(Hf1−xZrx)S3 chalcogenide perovskite system","authors":"Devansh Gahlawat , Jaspinder Kaur , Rikmantra Basu , Ajay Kumar Sharma , Uma Rani , Jaya Madan , Rahul Pandey","doi":"10.1016/j.mtphys.2025.101959","DOIUrl":"10.1016/j.mtphys.2025.101959","url":null,"abstract":"<div><div>We present an integrated quantum-to-device-to-data framework for rational bandgap engineering of compositionally graded Ba(Hf<span><math><msub><mrow></mrow><mrow><mn>1</mn><mo>−</mo><mi>x</mi></mrow></msub></math></span>Zr<span><math><msub><mrow></mrow><mrow><mi>x</mi></mrow></msub></math></span>)S<span><math><msub><mrow></mrow><mrow><mn>3</mn></mrow></msub></math></span> absorbers and its impact on photovoltaic performance. Starting from a quantum-mechanical foundation (Bloch states, virtual crystal approximation, and bowing), four analytic grading laws (linear, parabolic, power-law, and logarithmic) were implemented in SCAPS-1D at 300 K and exhaustively explored via batch simulations by varying absorber thickness (0.1–1.0 <span><math><mi>μ</mi></math></span>m), left-end composition (<span><math><mrow><mi>x</mi><mo>=</mo><mn>0</mn></mrow></math></span>–1), and a profile-specific parameter (uniform <span><math><msub><mrow><mi>N</mi></mrow><mrow><mi>D</mi></mrow></msub></math></span> for linear/logarithmic; bowing factor <span><math><mi>b</mi></math></span> for parabolic; exponent <span><math><mi>m</mi></math></span> for power-law). Multi-dimensional contour maps of power conversion efficiency (<span><math><mi>η</mi></math></span>), open-circuit voltage (<span><math><msub><mrow><mi>V</mi></mrow><mrow><mi>OC</mi></mrow></msub></math></span>), short-circuit current density (<span><math><msub><mrow><mi>J</mi></mrow><mrow><mi>SC</mi></mrow></msub></math></span>), and fill factor (FF) were used to identify optimized device architectures; the best-performing designs (linear: <span><math><mrow><mi>η</mi><mo>=</mo><mn>24</mn><mo>.</mo><mn>22</mn><mtext>%</mtext></mrow></math></span>, parabolic: <span><math><mrow><mi>η</mi><mo>=</mo><mn>25</mn><mo>.</mo><mn>08</mn><mtext>%</mtext></mrow></math></span>, power-law: <span><math><mrow><mi>η</mi><mo>=</mo><mn>25</mn><mo>.</mo><mn>45</mn><mtext>%</mtext></mrow></math></span>, logarithmic: <span><math><mrow><mi>η</mi><mo>=</mo><mn>18</mn><mo>.</mo><mn>52</mn><mtext>%</mtext></mrow></math></span>) were analyzed through spatial band diagrams, <span><math><mi>J</mi></math></span>–<span><math><mi>V</mi></math></span>/EQE responses, and generation–recombination profiles. The optical and transport implications of grading were interpreted using relations such as the absorption edge <span><math><mrow><msub><mrow><mi>λ</mi></mrow><mrow><mi>c</mi></mrow></msub><mo>=</mo><mn>1239</mn><mo>.</mo><mn>8</mn><mo>/</mo><msub><mrow><mi>E</mi></mrow><mrow><mi>g</mi></mrow></msub></mrow></math></span>, penetration depth <span><math><mrow><mi>d</mi><mo>=</mo><mn>1</mn><mo>/</mo><mi>α</mi></mrow></math></span>, and the graded quasi-electric field <span><math><mrow><msub><mrow><mi>E</mi></mrow><mrow><mi>grad</mi></mrow></msub><mo>=</mo><mo>−</mo><mfrac><mrow><mn>1</mn></mrow><mrow><mi>q</mi></mrow></mfrac><mfrac><mrow><mi>d</mi><msub><mrow><mi>E</mi></mrow><mrow><mi>c</mi></mrow></msub></mrow><mrow><mi>d</mi><mi>y</mi></mrow>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"60 ","pages":"Article 101959"},"PeriodicalIF":9.7,"publicationDate":"2025-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145657435","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-12-01DOI: 10.1016/j.mtphys.2025.101957
Tiezheng Sun , Meichen Tian , Hong Chen , Donglin Yuan , Lijun Wang , Zhenyi Shao , Haorui Du , Xiaobo Lei , Muchun Guo , Qinyong Zhang
Half-Heusler (HH) compounds have attracted considerable attention for power generation applications due to their high temperature stability and excellent thermoelectric properties. Yet, intrinsic defects in HH compounds lead to the carrier concentration deviating from the optimal range and the mobility deterioration. Here, we find that Nb doping increases the formation energy of intrinsic interstitial Fe (Fei) and the solubility of Ti in the Ti doped FeVSb-based compound, thereby enhancing the hole concentration and weakening the point defect-carrier scattering. The improved carrier concentration pushes the Fermi level to a lower energy level, promoting multiband transport, thus increasing density-of-states effective mass (m∗). The reduced Fei scattering increases carrier mobility. As a result, the peak power factor increases from 13.6 μW cm−1 K−2 for FeV0.75Ti0.25Sb to 27.6 μW cm−1 K−2 for FeV0.3Nb0.45Ti0.25Sb. Moreover, due to Nb doping introducing the large mass and strain fluctuations, the lattice thermal conductivity is significantly reduced. Finally, the peak ZT of 0.93 at 973 K and the average ZTave of 0.56 within 300–973 K in the FeV0.3Nb0.45Ti0.25Sb sample are achieved. This work highlights the significant role of manipulating intrinsic defect in enhancing thermoelectric performance of HH compounds.
{"title":"Manipulating defects leads to high thermoelectric performance in p-type FeVSb-based Half-Heusler materials","authors":"Tiezheng Sun , Meichen Tian , Hong Chen , Donglin Yuan , Lijun Wang , Zhenyi Shao , Haorui Du , Xiaobo Lei , Muchun Guo , Qinyong Zhang","doi":"10.1016/j.mtphys.2025.101957","DOIUrl":"10.1016/j.mtphys.2025.101957","url":null,"abstract":"<div><div>Half-Heusler (HH) compounds have attracted considerable attention for power generation applications due to their high temperature stability and excellent thermoelectric properties. Yet, intrinsic defects in HH compounds lead to the carrier concentration deviating from the optimal range and the mobility deterioration. Here, we find that Nb doping increases the formation energy of intrinsic interstitial Fe (Fe<sub>i</sub>) and the solubility of Ti in the Ti doped FeVSb-based compound, thereby enhancing the hole concentration and weakening the point defect-carrier scattering. The improved carrier concentration pushes the Fermi level to a lower energy level, promoting multiband transport, thus increasing density-of-states effective mass (m∗). The reduced Fe<sub>i</sub> scattering increases carrier mobility. As a result, the peak power factor increases from 13.6 μW cm<sup>−1</sup> K<sup>−2</sup> for FeV<sub>0.75</sub>Ti<sub>0.25</sub>Sb to 27.6 μW cm<sup>−1</sup> K<sup>−2</sup> for FeV<sub>0.3</sub>Nb<sub>0.45</sub>Ti<sub>0.25</sub>Sb. Moreover, due to Nb doping introducing the large mass and strain fluctuations, the lattice thermal conductivity is significantly reduced. Finally, the peak <em>ZT</em> of 0.93 at 973 K and the average <em>ZT</em><sub>ave</sub> of 0.56 within 300–973 K in the FeV<sub>0.3</sub>Nb<sub>0.45</sub>Ti<sub>0.25</sub>Sb sample are achieved. This work highlights the significant role of manipulating intrinsic defect in enhancing thermoelectric performance of HH compounds.</div></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"59 ","pages":"Article 101957"},"PeriodicalIF":9.7,"publicationDate":"2025-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145592924","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-12-01DOI: 10.1016/j.mtphys.2025.101956
Jing-Han Gao , Xiaolei Wang , Chen Guo , Daxing Huang , Hao Yu , Yan Zhang , Hongwei Gu , Fazhu Ding , Zizhao Gan
The conventional Mg infiltration method is a low-cost route for high-density bulk MgB2, retaining the in-situ method's advantage of good grain connectivity while resolving the void issue. However, it suffers from the unique problem of residual Mg, preventing it from rivaling the performance of high-pressure techniques. This work clarifies the origin of residual Mg in the liquid infiltration process and demonstrates that this issue can be completely circumvented by introducing a small mechanical driving force to assist thermal diffusion. A representative sample prepared via this optimized approach (sintered at 750 °C for 1 h) exhibits a relative density of over 85 %, a superconducting transition temperature (Tc) of 38.1 K, and critical current density (Jc) values of 1.35 × 105 A/cm2 (measured at 4.2 K, 3 T) and 2.66 × 105 A/cm2 (measured at 20 K, 1 T). Notably, this approach yields MgB2 bulk with the highest Jc yet reported for any infiltration-based method—even surpassing that of most samples prepared by high-pressure (HP) or spark plasma sintering (SPS) techniques, which are typically considered more advanced. Beyond pure MgB2, SiC has been successfully introduced into MgB2 bulks via the Mg infiltration method, and the doped sample exhibits a remarkable Jc value of 2.11 A/cm2 × 104 A/cm2 at 4.2 K and 7 T. This work opens a new, simple, and effective pathway for the low-cost, scalable fabrication of high-performance pure and doped bulk MgB2.
{"title":"Record-high critical current density in infiltration-processed MgB2 bulk","authors":"Jing-Han Gao , Xiaolei Wang , Chen Guo , Daxing Huang , Hao Yu , Yan Zhang , Hongwei Gu , Fazhu Ding , Zizhao Gan","doi":"10.1016/j.mtphys.2025.101956","DOIUrl":"10.1016/j.mtphys.2025.101956","url":null,"abstract":"<div><div>The conventional Mg infiltration method is a low-cost route for high-density bulk MgB<sub>2</sub>, retaining the in-situ method's advantage of good grain connectivity while resolving the void issue. However, it suffers from the unique problem of residual Mg, preventing it from rivaling the performance of high-pressure techniques. This work clarifies the origin of residual Mg in the liquid infiltration process and demonstrates that this issue can be completely circumvented by introducing a small mechanical driving force to assist thermal diffusion. A representative sample prepared via this optimized approach (sintered at 750 °C for 1 h) exhibits a relative density of over 85 %, a superconducting transition temperature (<em>T</em><sub>c</sub>) of 38.1 K, and critical current density (<em>J</em><sub>c</sub>) values of 1.35 × 10<sup>5</sup> A/cm<sup>2</sup> (measured at 4.2 K, 3 T) and 2.66 × 10<sup>5</sup> A/cm<sup>2</sup> (measured at 20 K, 1 T). Notably, this approach yields MgB<sub>2</sub> bulk with the highest <em>J</em><sub>c</sub> yet reported for any infiltration-based method—even surpassing that of most samples prepared by high-pressure (HP) or spark plasma sintering (SPS) techniques, which are typically considered more advanced. Beyond pure MgB<sub>2</sub>, SiC has been successfully introduced into MgB<sub>2</sub> bulks via the Mg infiltration method, and the doped sample exhibits a remarkable <em>J</em><sub>c</sub> value of 2.11 A/cm<sup>2</sup> × 10<sup>4</sup> A/cm<sup>2</sup> at 4.2 K and 7 T. This work opens a new, simple, and effective pathway for the low-cost, scalable fabrication of high-performance pure and doped bulk MgB<sub>2</sub>.</div></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"59 ","pages":"Article 101956"},"PeriodicalIF":9.7,"publicationDate":"2025-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145594125","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-12-01DOI: 10.1016/j.mtphys.2025.101954
Quan Liu , Zhaochen Wang , Sun-Kyung Kim , Xiaobing Luo , Philippe Ben-Abdallah , Wonjoon Choi , Run Hu
The ability to actively control local states in thermal lattice provides critical insights into nonequilibrium thermodynamics and enables novel approaches to energy management across nano to macroscopic scales. The process of thermalization in thermal lattice is a kind of neighboring interactions due to the media- and path-dependent characteristic of Fourier's diffusion, rendering the significant challenge for remote control of local thermal state. Here we construct the time-independent Hamiltonian of a thermal lattice system with consideration of conduction and convection simultaneously and derive the optimal external command for active control of local thermal states. We implement three thermal targeting control—insulation, synchronization, and fluctuation—by modulating power inputs and precisely monitoring temperature evolution to demonstrate the validity and powerfulness of remote spatiotemporal control of local thermal states. Our work paves the way for remote spatiotemporal control of thermal states and provides efficient alternatives for advanced active thermal management in complex architectures.
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Pub Date : 2025-12-01DOI: 10.1016/j.mtphys.2025.101960
Faisal Bashir , Haider Abbas , Arshid Nisar , Usman Isyaku Bature , Ali Alzahrani , Furqan Zahoor
Future big-data processing with excellent energy efficiency is made possible by universal cryogenic computing, which includes von Neumann, neuromorphic, and quantum computing architectures. The post-Moore era of integrated circuits presents a number of obstacles to enhance the computing performance, making it challenging to satisfy the constantly rising demands of computing. The computing systems based on Cryogenic complementary metal oxide semiconductor (CMOS) have been considered among the most feasible methods for overcoming the performance bottlenecks. Device leakage and wire resistance can be greatly decreased by cooling the circuitry to cryogenic temperatures, which would further enhance performance and energy efficiency. In this work, we conduct a comprehensive review of the Cryogenic CMOS based computing systems for future scaled quantum computing applications. The details of Cryogenic CMOS transistors, Cryogenic processor architecture and Cryogenic CMOS modeling are presented in this review. Also, discussion on the development of cryogenic memory technologies is presented with focus on cryogenic non-superconducting memories (including those based on charge and resistance). Finally, the challenges and opportunities in the further development and deployment of Cryogenic systems are discussed.
{"title":"Cryogenic electronics for high performance computing applications: A comprehensive review","authors":"Faisal Bashir , Haider Abbas , Arshid Nisar , Usman Isyaku Bature , Ali Alzahrani , Furqan Zahoor","doi":"10.1016/j.mtphys.2025.101960","DOIUrl":"10.1016/j.mtphys.2025.101960","url":null,"abstract":"<div><div>Future big-data processing with excellent energy efficiency is made possible by universal cryogenic computing, which includes von Neumann, neuromorphic, and quantum computing architectures. The post-Moore era of integrated circuits presents a number of obstacles to enhance the computing performance, making it challenging to satisfy the constantly rising demands of computing. The computing systems based on Cryogenic complementary metal oxide semiconductor (CMOS) have been considered among the most feasible methods for overcoming the performance bottlenecks. Device leakage and wire resistance can be greatly decreased by cooling the circuitry to cryogenic temperatures, which would further enhance performance and energy efficiency. In this work, we conduct a comprehensive review of the Cryogenic CMOS based computing systems for future scaled quantum computing applications. The details of Cryogenic CMOS transistors, Cryogenic processor architecture and Cryogenic CMOS modeling are presented in this review. Also, discussion on the development of cryogenic memory technologies is presented with focus on cryogenic non-superconducting memories (including those based on charge and resistance). Finally, the challenges and opportunities in the further development and deployment of Cryogenic systems are discussed.</div></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"59 ","pages":"Article 101960"},"PeriodicalIF":9.7,"publicationDate":"2025-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145594122","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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