Two-dimensional Chern insulators have emerged as crucial platforms for the realization of the quantum anomalous Hall effect, and as such have attracted significant interest in spintronics and topological quantum physics due to their unique coexistence of spontaneous magnetization and nontrivial topological characteristics. Nonetheless, substantial challenges persist in such systems, encompassing spin entanglement and the possession of only one edge state (Chern number =1), which significantly hinder their practical applications. Herein, we propose a novel two-dimensional ferromagnetic half-semi-topological-metal, monolayer TiTeSO, that exhibits exceptional electronic properties. Its majority spin channel possesses only a pair of symmetry-protected linear intersection points at the Fermi level, while the states of minority one locate far away from the Fermi level. When spin–orbit coupling is included, a substantial band gap of 92.8 meV is induced at the linear intersection points. Remarkably, the emergence of dual dissipationless chiral edge channels and a quantized Hall conductivity plateau at 2/ collectively establish monolayer TiTeSO as a high-Chern-number insulator with =2. Furthermore, it is demonstrated that valley polarization can be achieved and controlled through the application of strain and the manipulation of the direction of magnetization. The first-principles calculations, in conjunction with Monte Carlo simulations, yield a Curie temperature of 170 K for monolayer TiTeSO, thereby indicating the plausibility of coexistence of valley polarization and topological states at temperatures well exceeding that of liquid nitrogen. These findings could provide a foundation for the development of multi-channels dissipationless transport devices and nonvolatile multistate memory architectures.
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