Pub Date : 2026-02-01Epub Date: 2026-02-02DOI: 10.1016/j.mtphys.2026.102034
Kexun Li , Fangyu Shi , Yanxia Wu , Min Zhao , Ying Liu
Modulating the electromagnetic properties of Ti3C2Tx MXene to produce an ideal multifunctional and efficient microwave absorbent is a challenging research hotspot. Although the atomic layer deposited transition magnetic metal nanostructures are a feasible strategy, the effects of the components and microstructure of the introduced magnetic nanostructure on the electromagnetic wave absorption performances of the MXene are still far from clear. Here, the Fe element has been selected as the modifier, and a heterostructure Fe/Ti3C2Tx MXene hybrid is constructed by the atomic layer deposition of Fe nanoparticles on the Ti3C2Tx nanosheets. The influences of the deposition cycles on the chemical composition, microstructure, electromagnetic response characteristics, and microwave absorption properties are investigated. The results show that the decoration of Fe nanoparticles enables a tunable electromagnetic performance. The Fe/Ti3C2Tx MXene hybrid achieves an optimal attenuation with the minimum reflection loss of -82.94 dB at a small thickness of 1.16 mm, corresponding with an effective absorption bandwidth of 3.76 GHz. The strong microwave absorption is attributed to the dielectric-magnetic synergy in the MXene and Fe nanoparticles, which provides excellent impedance matching, interfacial and dipolar polarization loss, and magnetic resonance loss. Specifically, the hybrid endows a low Fe content of 2.66 wt%. This is important for the design of a lightweight absorber with high attenuation efficiency.
{"title":"Heterogeneous Fe/Ti3C2Tx MXene derived magnetic-dielectric synergy for efficient microwave attenuation at ultrathin thickness","authors":"Kexun Li , Fangyu Shi , Yanxia Wu , Min Zhao , Ying Liu","doi":"10.1016/j.mtphys.2026.102034","DOIUrl":"10.1016/j.mtphys.2026.102034","url":null,"abstract":"<div><div>Modulating the electromagnetic properties of Ti<sub>3</sub>C<sub>2</sub>T<sub>x</sub> MXene to produce an ideal multifunctional and efficient microwave absorbent is a challenging research hotspot. Although the atomic layer deposited transition magnetic metal nanostructures are a feasible strategy, the effects of the components and microstructure of the introduced magnetic nanostructure on the electromagnetic wave absorption performances of the MXene are still far from clear. Here, the Fe element has been selected as the modifier, and a heterostructure Fe/Ti<sub>3</sub>C<sub>2</sub>T<sub>x</sub> MXene hybrid is constructed by the atomic layer deposition of Fe nanoparticles on the Ti<sub>3</sub>C<sub>2</sub>T<sub>x</sub> nanosheets. The influences of the deposition cycles on the chemical composition, microstructure, electromagnetic response characteristics, and microwave absorption properties are investigated. The results show that the decoration of Fe nanoparticles enables a tunable electromagnetic performance. The Fe/Ti<sub>3</sub>C<sub>2</sub>T<sub>x</sub> MXene hybrid achieves an optimal attenuation with the minimum reflection loss of -82.94 dB at a small thickness of 1.16 mm, corresponding with an effective absorption bandwidth of 3.76 GHz. The strong microwave absorption is attributed to the dielectric-magnetic synergy in the MXene and Fe nanoparticles, which provides excellent impedance matching, interfacial and dipolar polarization loss, and magnetic resonance loss. Specifically, the hybrid endows a low Fe content of 2.66 wt%. This is important for the design of a lightweight absorber with high attenuation efficiency.</div></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"61 ","pages":"Article 102034"},"PeriodicalIF":9.7,"publicationDate":"2026-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146110093","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-02-01Epub Date: 2026-01-13DOI: 10.1016/j.mtphys.2026.102017
Yu Duan , Mingrui Liu , Xianfeng Ye , Yu Liang , Danqi He , Zhijie Wei , Wanting Zhu , Yu Zhang , Wenyu Zhao , Qingjie Zhang
The development of high-performance infrared emissive materials is crucial for advancing energy utilization and thermal management technologies. To this end, we designed a series of Nd-doped CeO2 materials with different dopant concentrations to precisely modulate oxygen vacancy concentration and impurity incorporation. The introduction of Nd not only facilitates the dynamic transition between Ce3+ and Ce4+ but also generates abundant oxygen vacancies and induces significant lattice distortion. These synergistic effects collectively narrow the electronic bandgap, facilitate carrier transitions, and reduce vibrational symmetry, thereby enhancing phonon-infrared interactions. As a result, Ce-Nd07 nanoparticles achieved a broadband emissivity of 0.923 (2.5–15 μm), which further increased to 0.935 when the material was fabricated into Ce-Nd07@PDMS composite coating. Furthermore, simulated radiative cooling tests reveal a temperature drop of 8.3 °C with a cooling efficiency of 12.3 %, confirming the exceptional radiative heat-dissipation capability. Additionally, the composite coating exhibits excellent UV resistance and hydrophobicity. These findings highlight a dual electronic-lattice engineering strategy for the development of next-generation radiative cooling materials.
{"title":"Enhanced broadband infrared radiative cooling of CeO2/PDMS coating via partial substitution of Ce with Nd","authors":"Yu Duan , Mingrui Liu , Xianfeng Ye , Yu Liang , Danqi He , Zhijie Wei , Wanting Zhu , Yu Zhang , Wenyu Zhao , Qingjie Zhang","doi":"10.1016/j.mtphys.2026.102017","DOIUrl":"10.1016/j.mtphys.2026.102017","url":null,"abstract":"<div><div>The development of high-performance infrared emissive materials is crucial for advancing energy utilization and thermal management technologies. To this end, we designed a series of Nd-doped CeO<sub>2</sub> materials with different dopant concentrations to precisely modulate oxygen vacancy concentration and impurity incorporation. The introduction of Nd not only facilitates the dynamic transition between Ce<sup>3+</sup> and Ce<sup>4+</sup> but also generates abundant oxygen vacancies and induces significant lattice distortion. These synergistic effects collectively narrow the electronic bandgap, facilitate carrier transitions, and reduce vibrational symmetry, thereby enhancing phonon-infrared interactions. As a result, Ce-Nd07 nanoparticles achieved a broadband emissivity of 0.923 (2.5–15 μm), which further increased to 0.935 when the material was fabricated into Ce-Nd07@PDMS composite coating. Furthermore, simulated radiative cooling tests reveal a temperature drop of 8.3 °C with a cooling efficiency of 12.3 %, confirming the exceptional radiative heat-dissipation capability. Additionally, the composite coating exhibits excellent UV resistance and hydrophobicity. These findings highlight a dual electronic-lattice engineering strategy for the development of next-generation radiative cooling materials.</div></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"61 ","pages":"Article 102017"},"PeriodicalIF":9.7,"publicationDate":"2026-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145956515","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-02-01Epub Date: 2026-01-12DOI: 10.1016/j.mtphys.2026.102015
Zhen Wang , Yazhu Xu , Gaofeng Zhao , Zhenzhen Feng , David J. Singh
Thermal conductivity is a key materials parameter that is important in combination with other properties for important applications including electronics, thermal barriers and a variety of energy technologies. There are established trends that are useful in finding materials with desirable thermal conductivity. For example, stable stiff lattices typically yield high thermal conductivity, while materials near instabilities have low thermal conductivity. Rattling is widely applied approach for lowering thermal conductivity and is understood as the incorporation of loosely bound ions in a semiconducting framework. It is manifested in low frequency flat optical phonon branches that cross the acoustic branches. We investigate LaRhTe using global optimization crystal structure determination, anharmonic lattice dynamics, and first principles based characterization of bonding. There are two low energy phases, a hexagonal metallic phase and a cubic semiconducting phase. This cubic phase is predicted to be a low thermal conductivity (1.61 W m−1K−1 at 300 K) semiconductor. We elucidate the origins of its low thermal conductivity finding that strong anharmonic phonon scattering, induced by weak bonding of Rh within the cage-like LaTe network, is important. The Rh atoms contribute to low-frequency phonons, while the La-Te system dominates the high-frequency optical phonon branches. This is unexpected based on the chemical characteristics of Rh chalcogenides and the known thermoelectric behavior of La-Te binary phases. It arises due to the structural constraints in the cubic half-Heusler phase leading to a generalized rattling behavior involving Rh. These results show that the rattling concept is more general than usually assumed and can be operative even without the characteristic rattler induced flat optical branches anticrossing the acoustic branches that are often discussed in the context of low thermal conductivity thermoelectrics.
导热系数是一个关键的材料参数,它与电子、热障和各种能源技术等重要应用的其他性能结合在一起很重要。在寻找具有理想导热性的材料时,有一些既定的趋势是有用的。例如,稳定的刚性晶格通常产生高导热系数,而接近不稳定的材料具有低导热系数。嘎嘎是广泛应用于降低热导率的方法,被理解为在半导体框架中结合松散结合的离子。它表现为低频平面光学声子分支与声学分支交叉。我们使用全局优化晶体结构确定、非调和晶格动力学和基于第一性原理的键合表征来研究LaRhTe。有两种低能相,六方金属相和立方半导体相。该立方相预测为低导热系数(在300 K时为1.61 W m−1K−1)的半导体。我们阐明了其低热导率的起源,发现由笼状LaTe网络中Rh的弱键引起的强非谐波声子散射是重要的。Rh原子对低频声子有贡献,而La-Te系统主导高频光学声子分支。基于Rh硫族化合物的化学特性和已知的La-Te二元相的热电行为,这是出乎意料的。它的产生是由于立方半赫斯勒相的结构约束导致涉及Rh的广义咔嗒行为。这些结果表明,嘎嘎声的概念比通常假设的更普遍,即使没有响尾声诱发的平坦光学分支的特征也可以运作,而声学分支通常在低热导率的热电环境中讨论。
{"title":"Generalized rattling and thermal conductivity: Cubic LaRhTe","authors":"Zhen Wang , Yazhu Xu , Gaofeng Zhao , Zhenzhen Feng , David J. Singh","doi":"10.1016/j.mtphys.2026.102015","DOIUrl":"10.1016/j.mtphys.2026.102015","url":null,"abstract":"<div><div>Thermal conductivity is a key materials parameter that is important in combination with other properties for important applications including electronics, thermal barriers and a variety of energy technologies. There are established trends that are useful in finding materials with desirable thermal conductivity. For example, stable stiff lattices typically yield high thermal conductivity, while materials near instabilities have low thermal conductivity. Rattling is widely applied approach for lowering thermal conductivity and is understood as the incorporation of loosely bound ions in a semiconducting framework. It is manifested in low frequency flat optical phonon branches that cross the acoustic branches. We investigate LaRhTe using global optimization crystal structure determination, anharmonic lattice dynamics, and first principles based characterization of bonding. There are two low energy phases, a hexagonal metallic phase and a cubic semiconducting phase. This cubic phase is predicted to be a low thermal conductivity (1.61 W m<sup>−1</sup>K<sup>−1</sup> at 300 K) semiconductor. We elucidate the origins of its low thermal conductivity finding that strong anharmonic phonon scattering, induced by weak bonding of Rh within the cage-like LaTe network, is important. The Rh atoms contribute to low-frequency phonons, while the La-Te system dominates the high-frequency optical phonon branches. This is unexpected based on the chemical characteristics of Rh chalcogenides and the known thermoelectric behavior of La-Te binary phases. It arises due to the structural constraints in the cubic half-Heusler phase leading to a generalized rattling behavior involving Rh. These results show that the rattling concept is more general than usually assumed and can be operative even without the characteristic rattler induced flat optical branches anticrossing the acoustic branches that are often discussed in the context of low thermal conductivity thermoelectrics.</div></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"61 ","pages":"Article 102015"},"PeriodicalIF":9.7,"publicationDate":"2026-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145956520","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-02-01Epub Date: 2026-01-14DOI: 10.1016/j.mtphys.2026.102021
Yaran Shi , Ze Yang , Xiaohui Li , Zhouzhou Wang , Xue Dong , Wenzhu Cao , Chenchen Wei , Zhixuan Huang , Zijun Sun , Yan Jiang , Ying Yu
Sn-based aqueous acidic batteries (SnAABs) as a new type of non-toxicity, acid-resistant, and ease of recycling batteries, face the challenges of inhomogeneous Sn deposition and excessive hydrogen evolution reaction (HER) in acidic electrolytes, leading to its fast failure. Herein, current density has been identified as a key parameter for tuning Sn2+ nucleation and mass-transfer processes simultaneously on Sn anode. Both low current densities (LCD) and high current densities (HCD) resulted in poor plating/stripping stability due to inhomogeneous deposition and excessive HER. The optimal stability was achieved at moderate current densities (MCD), which balanced the nucleation and mass-transfer processes. As such, the Sn symmetrical cell exhibited stable cycling for 1000 h with a voltage polarization of 47 mV at the MCD, which remarkably surpassed the performances under the LCD (110 h) and the HCD (68 h). This work provides fundamental and practical insights for designing highly stable metal anodes.
{"title":"Balancing nucleation and mass-transfer processes through regulating current density for stable aqueous Sn anode batteries","authors":"Yaran Shi , Ze Yang , Xiaohui Li , Zhouzhou Wang , Xue Dong , Wenzhu Cao , Chenchen Wei , Zhixuan Huang , Zijun Sun , Yan Jiang , Ying Yu","doi":"10.1016/j.mtphys.2026.102021","DOIUrl":"10.1016/j.mtphys.2026.102021","url":null,"abstract":"<div><div>Sn-based aqueous acidic batteries (SnAABs) as a new type of non-toxicity, acid-resistant, and ease of recycling batteries, face the challenges of inhomogeneous Sn deposition and excessive hydrogen evolution reaction (HER) in acidic electrolytes, leading to its fast failure. Herein, current density has been identified as a key parameter for tuning Sn<sup>2+</sup> nucleation and mass-transfer processes simultaneously on Sn anode. Both low current densities (LCD) and high current densities (HCD) resulted in poor plating/stripping stability due to inhomogeneous deposition and excessive HER. The optimal stability was achieved at moderate current densities (MCD), which balanced the nucleation and mass-transfer processes. As such, the Sn symmetrical cell exhibited stable cycling for 1000 h with a voltage polarization of 47 mV at the MCD, which remarkably surpassed the performances under the LCD (110 h) and the HCD (68 h). This work provides fundamental and practical insights for designing highly stable metal anodes.</div></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"61 ","pages":"Article 102021"},"PeriodicalIF":9.7,"publicationDate":"2026-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145962499","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-02-01Epub Date: 2026-01-22DOI: 10.1016/j.mtphys.2026.102030
Jiayi Liu , Dongyang Han , Shujun Zhu , Xiaoli Zhang , Shulin Hu , Kaisen Liu , Wenrui Zhang , Jichun Ye
β-Ga2O3 is a promising material for solar-blind ultraviolet (UV) photodetectors, yet its performance is often limited by native point defects. Here, we demonstrate ultrahigh performance β-Ga2O3 photodetectors through in-situ defect engineering via growth-pressure modulation during metal-organic chemical vapor deposition. Systematic variation of deposition pressure from 40 to 100 mbar reveals a nonmonotonic formation of gallium-oxygen divacancy (VGa–VO) complexes governed by competing effects of precursor transport, surface nucleation, and adatom migration kinetics. X-ray photoelectron spectroscopy and photoluminescence analyses confirm that an intermediate pressure of 80 mbar maximizes VGa–VO defect incorporation by balancing adatom mobility and precursor kinetics. The VGa–VO complexes act as deep-level hole traps, prolonging carrier lifetimes and generating strong photoconductive gain. The β-Ga2O3 photodetector grown at 80 mbar exhibits an ultrahigh responsivity of 1.40 × 104 A/W, a photo-to-dark current ratio of 1.88 × 107, a detectivity of 1.12 × 1014 Jones, and rapid rise/decay times of 33.9/10.5 ms. This study establishes growth pressure-tuned defect engineering as an effective strategy for tailoring the optoelectronic properties of β-Ga2O3, providing a viable pathway toward high-performance solar-blind UV photodetectors.
{"title":"Ultrahigh responsivity β-Ga2O3 solar-blind ultraviolet photodetectors through in-situ growth pressure-tuned defect engineering","authors":"Jiayi Liu , Dongyang Han , Shujun Zhu , Xiaoli Zhang , Shulin Hu , Kaisen Liu , Wenrui Zhang , Jichun Ye","doi":"10.1016/j.mtphys.2026.102030","DOIUrl":"10.1016/j.mtphys.2026.102030","url":null,"abstract":"<div><div><em>β</em>-Ga<sub>2</sub>O<sub>3</sub> is a promising material for solar-blind ultraviolet (UV) photodetectors, yet its performance is often limited by native point defects. Here, we demonstrate ultrahigh performance <em>β</em>-Ga<sub>2</sub>O<sub>3</sub> photodetectors through in-situ defect engineering via growth-pressure modulation during metal-organic chemical vapor deposition. Systematic variation of deposition pressure from 40 to 100 mbar reveals a nonmonotonic formation of gallium-oxygen divacancy (V<sub>Ga</sub>–V<sub>O</sub>) complexes governed by competing effects of precursor transport, surface nucleation, and adatom migration kinetics. X-ray photoelectron spectroscopy and photoluminescence analyses confirm that an intermediate pressure of 80 mbar maximizes V<sub>Ga</sub>–V<sub>O</sub> defect incorporation by balancing adatom mobility and precursor kinetics. The V<sub>Ga</sub>–V<sub>O</sub> complexes act as deep-level hole traps, prolonging carrier lifetimes and generating strong photoconductive gain. The <em>β</em>-Ga<sub>2</sub>O<sub>3</sub> photodetector grown at 80 mbar exhibits an ultrahigh responsivity of 1.40 × 10<sup>4</sup> A/W, a photo-to-dark current ratio of 1.88 × 10<sup>7</sup>, a detectivity of 1.12 × 10<sup>14</sup> Jones, and rapid rise/decay times of 33.9/10.5 ms. This study establishes growth pressure-tuned defect engineering as an effective strategy for tailoring the optoelectronic properties of <em>β</em>-Ga<sub>2</sub>O<sub>3</sub>, providing a viable pathway toward high-performance solar-blind UV photodetectors.</div></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"61 ","pages":"Article 102030"},"PeriodicalIF":9.7,"publicationDate":"2026-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146033024","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-02-01Epub Date: 2026-01-27DOI: 10.1016/j.mtphys.2026.102029
Mohammad Yaasar Moosa , P. Uma Sathyakam
Ammonia (NH3) serves as a significant environmental pollutant, a clinically important biomarker, and a critical target in industrial process monitoring. These varied roles drive the need for high-performance gas sensors that can operate effectively at room temperature. Metal–Organic Frameworks (MOFs) have emerged as promising materials for gas sensing due to their high surface area, tunable pore architecture, and tailorable chemical properties. This review critically analyses recent advances in MOF-based ammonia sensors from a structure-to-sensing performance perspective, highlighting how rational structural design directly governs sensing behavior. Key strategies—including pore size optimization, the incorporation of open metal sites, linker functionalization with acidic or polar groups, defect engineering, and metal encapsulation are evaluated for their ability to enhance NH3 adsorption through Lewis acid–base interactions and hydrogen bonding. These structural features directly contribute to the exceptional sensing characterized by sub-ppm to ppb-level detection limits, large response amplitudes, rapid response/recovery times at room temperature, and improved selectivity. Post-synthetic modifications that improve stability and sensing reliability under high humidity conditions are also examined. By correlating MOF structural characteristics with experimentally demonstrated sensing benchmarks, this review provides a clear framework for the rational design and scalable integration of MOF-based ammonia sensors, supporting their transition from laboratory studies to practical sensing devices.
{"title":"From structure to sensing: Metal Organic Framework for ammonia gas detection","authors":"Mohammad Yaasar Moosa , P. Uma Sathyakam","doi":"10.1016/j.mtphys.2026.102029","DOIUrl":"10.1016/j.mtphys.2026.102029","url":null,"abstract":"<div><div>Ammonia (NH<sub>3</sub>) serves as a significant environmental pollutant, a clinically important biomarker, and a critical target in industrial process monitoring. These varied roles drive the need for high-performance gas sensors that can operate effectively at room temperature. Metal–Organic Frameworks (MOFs) have emerged as promising materials for gas sensing due to their high surface area, tunable pore architecture, and tailorable chemical properties. This review critically analyses recent advances in MOF-based ammonia sensors from a structure-to-sensing performance perspective, highlighting how rational structural design directly governs sensing behavior. Key strategies—including pore size optimization, the incorporation of open metal sites, linker functionalization with acidic or polar groups, defect engineering, and metal encapsulation are evaluated for their ability to enhance NH<sub>3</sub> adsorption through Lewis acid–base interactions and hydrogen bonding. These structural features directly contribute to the exceptional sensing characterized by sub-ppm to ppb-level detection limits, large response amplitudes, rapid response/recovery times at room temperature, and improved selectivity. Post-synthetic modifications that improve stability and sensing reliability under high humidity conditions are also examined. By correlating MOF structural characteristics with experimentally demonstrated sensing benchmarks, this review provides a clear framework for the rational design and scalable integration of MOF-based ammonia sensors, supporting their transition from laboratory studies to practical sensing devices.</div></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"61 ","pages":"Article 102029"},"PeriodicalIF":9.7,"publicationDate":"2026-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146056102","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-02-01Epub Date: 2026-01-17DOI: 10.1016/j.mtphys.2026.102025
Xianteng Zhou , Chaokun Guo , Zhen Yang , Yuanji Xu , Hongquan Song , De-Ye Lin , Fuyang Tian
The synergistic optimization of ultra-high hardness and low thermal conductivity in high entropy carbides is achieved by adjusting the concentration of ordered carbon vacancies. By using machine-learning interatomic potentials integrated with molecular dynamics simulations and calculations, we elucidate how lattice distortion, carbon vacancies and grain boundaries regulate the mechanical response and thermal transport of (NbTaZr)C. The results reveal that lattice distortion drives anomalous CNb bond rupture, enabling edge dislocation nucleation. Carbon vacancies reduce the critical resolved shear stress(CRSS) and induce localized amorphization, thereby enhancing intrinsic plasticity. The preferential segregation of carbon vacancies at grain boundaries optimizes stress redistribution, mitigating stress concentration while enhancing both yield strength and strain. Carbon vacancies markedly suppress lattice thermal transport capability via increasing vibrational localization and scattering between phonons and defects, whereas the ordering of carbon vacancies partially enhances lattice thermal conductivity through low-frequency phonon delocalization. Pronounced lattice distortion and Anderson localization collectively intensify electron scattering, thereby reducing electronic thermal conductivity, whereas the ordered carbon vacancies facilitate the delocalization of electrons, leading to a modest increase of electronic thermal conductivity. The interfacial thermal conductance(ITC) decreases due to impaired phonon mode matching and strengthened localization. We establish carbon vacancy-mediated strategies for concurrently tuning mechanical and thermal transport in multi-principal carbide ceramics.
{"title":"Vacancy-induced mechanism on deformation and thermal conductivity in medium-entropy carbides with typical grain boundaries","authors":"Xianteng Zhou , Chaokun Guo , Zhen Yang , Yuanji Xu , Hongquan Song , De-Ye Lin , Fuyang Tian","doi":"10.1016/j.mtphys.2026.102025","DOIUrl":"10.1016/j.mtphys.2026.102025","url":null,"abstract":"<div><div>The synergistic optimization of ultra-high hardness and low thermal conductivity in high entropy carbides is achieved by adjusting the concentration of ordered carbon vacancies. By using machine-learning interatomic potentials integrated with molecular dynamics simulations and <span><math><mrow><mi>a</mi><mi>b</mi></mrow></math></span> <span><math><mrow><mi>i</mi><mi>n</mi><mi>i</mi><mi>t</mi><mi>i</mi><mi>o</mi></mrow></math></span> calculations, we elucidate how lattice distortion, carbon vacancies and grain boundaries regulate the mechanical response and thermal transport of (NbTaZr)C. The results reveal that lattice distortion drives anomalous C<img>Nb bond rupture, enabling edge dislocation nucleation. Carbon vacancies reduce the critical resolved shear stress(CRSS) and induce localized amorphization, thereby enhancing intrinsic plasticity. The preferential segregation of carbon vacancies at grain boundaries optimizes stress redistribution, mitigating stress concentration while enhancing both yield strength and strain. Carbon vacancies markedly suppress lattice thermal transport capability via increasing vibrational localization and scattering between phonons and defects, whereas the ordering of carbon vacancies partially enhances lattice thermal conductivity through low-frequency phonon delocalization. Pronounced lattice distortion and Anderson localization collectively intensify electron scattering, thereby reducing electronic thermal conductivity, whereas the ordered carbon vacancies facilitate the delocalization of electrons, leading to a modest increase of electronic thermal conductivity. The interfacial thermal conductance(ITC) decreases due to impaired phonon mode matching and strengthened localization. We establish carbon vacancy-mediated strategies for concurrently tuning mechanical and thermal transport in multi-principal carbide ceramics.</div></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"61 ","pages":"Article 102025"},"PeriodicalIF":9.7,"publicationDate":"2026-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145993398","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Ga2O3 has emerged as a highly promising candidate for next-generation memristive materials, owing to its ultra-wide bandgap, exceptional chemical stability, and tunable defect energy states. However, single-layer Ga2O3 memristors often suffer from unstable switching voltages caused by the random formation and rupture of conductive filaments, hindering their practical application. In this work, a CeO2/amorphous-Ga2O3 (a-Ga2O3) heterostructure memristor with a high oxygen-vacancy gradient was fabricated by employing oxygen-vacancy-rich CeO2 as an oxygen-vacancy reservoir. The conductance change arises from reversible vacancy migration rather than filament formation in this device, ensuring stable and uniform switching. The device exhibits excellent switching uniformity, with the coefficient of variation for Vset and Vreset as low as 0.18 and 0.15, respectively, which are significantly improved compared with those of the single-layer a-Ga2O3 device (0.40 and 0.53, respectively). Moreover, both the HRS and LRS states remain highly stable for up to 104 s under dark conditions. This work provides an effective approach to achieve stable, uniform, and non-filamentary resistive switching in wide-bandgap oxide memristors, paving the way for reliable neuromorphic and logic device applications.
{"title":"Stable memristive switching mechanism in CeO2/a-Ga2O3 heterostructure toward synaptic plasticity and logical operations","authors":"Zhihao Yu, Zhenyang Wang, Fengmin Wu, Chao Wu, Daoyou Guo","doi":"10.1016/j.mtphys.2026.102014","DOIUrl":"10.1016/j.mtphys.2026.102014","url":null,"abstract":"<div><div>Ga<sub>2</sub>O<sub>3</sub> has emerged as a highly promising candidate for next-generation memristive materials, owing to its ultra-wide bandgap, exceptional chemical stability, and tunable defect energy states. However, single-layer Ga<sub>2</sub>O<sub>3</sub> memristors often suffer from unstable switching voltages caused by the random formation and rupture of conductive filaments, hindering their practical application. In this work, a CeO<sub>2</sub>/amorphous-Ga<sub>2</sub>O<sub>3</sub> (a-Ga<sub>2</sub>O<sub>3</sub>) heterostructure memristor with a high oxygen-vacancy gradient was fabricated by employing oxygen-vacancy-rich CeO<sub>2</sub> as an oxygen-vacancy reservoir. The conductance change arises from reversible vacancy migration rather than filament formation in this device, ensuring stable and uniform switching. The device exhibits excellent switching uniformity, with the coefficient of variation for V<sub>set</sub> and V<sub>reset</sub> as low as 0.18 and 0.15, respectively, which are significantly improved compared with those of the single-layer a-Ga<sub>2</sub>O<sub>3</sub> device (0.40 and 0.53, respectively). Moreover, both the HRS and LRS states remain highly stable for up to 10<sup>4</sup> s under dark conditions. This work provides an effective approach to achieve stable, uniform, and non-filamentary resistive switching in wide-bandgap oxide memristors, paving the way for reliable neuromorphic and logic device applications.</div></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"60 ","pages":"Article 102014"},"PeriodicalIF":9.7,"publicationDate":"2026-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145956549","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-01-01Epub Date: 2025-12-05DOI: 10.1016/j.mtphys.2025.101977
Leihuan Mu , Qinghua Liu , Jiehui Li , Hui Liu , Pu Feng , Ying Zhang , Jinmei He , Mengnan Qu
With the ongoing global energy transition and the implementation of the “carbon peak–carbon neutrality” strategy, electrocatalytic water splitting has been recognized as a pivotal technology for sustainable hydrogen production owing to its cleanliness and high efficiency. However, conventional powder-based electrodes still suffer from intrinsic drawbacks in electrical conductivity, structural durability, and gas evolution dynamics, making it challenging to achieve high current densities and long-term operational stability. In recent years, self-supported electrodes, benefiting from their integrated current collector–catalyst architecture, have demonstrated remarkable electron/ion transport, mechanical robustness, and highly designable three-dimensional porous structures, thereby emerging as the research frontier in electrolytic water splitting. Notably, precise regulation of electrode surface wettability has been proven to play a decisive role in governing reactant transport, bubble detachment kinetics, and the construction of triple-phase boundaries, thus serving as a key factor to enhance both catalytic activity and durability. This review highlights the synergistic interplay between wettability engineering and multidimensional strategies—including structural engineering, electronic structure modulation, interfacial engineering, and compositional regulation—revealing the intrinsic logic of cross-scale optimization for superior electrode performance. Furthermore, we propose a self-supported electrode design framework centered on the ternary synergy of “structure–wettability–electronics” and provide perspectives on dynamic wettability regulation and advanced in situ characterization techniques for predictive design and mechanistic elucidation. Collectively, this review aims to deliver theoretical insights and technological outlooks toward the rational design and industrial translation of high-performance self-supported electrodes for electrochemical water splitting.
{"title":"Self-supported electrodes for efficient water splitting: Integrating wettability with multidimensional engineering","authors":"Leihuan Mu , Qinghua Liu , Jiehui Li , Hui Liu , Pu Feng , Ying Zhang , Jinmei He , Mengnan Qu","doi":"10.1016/j.mtphys.2025.101977","DOIUrl":"10.1016/j.mtphys.2025.101977","url":null,"abstract":"<div><div>With the ongoing global energy transition and the implementation of the “carbon peak–carbon neutrality” strategy, electrocatalytic water splitting has been recognized as a pivotal technology for sustainable hydrogen production owing to its cleanliness and high efficiency. However, conventional powder-based electrodes still suffer from intrinsic drawbacks in electrical conductivity, structural durability, and gas evolution dynamics, making it challenging to achieve high current densities and long-term operational stability. In recent years, self-supported electrodes, benefiting from their integrated current collector–catalyst architecture, have demonstrated remarkable electron/ion transport, mechanical robustness, and highly designable three-dimensional porous structures, thereby emerging as the research frontier in electrolytic water splitting. Notably, precise regulation of electrode surface wettability has been proven to play a decisive role in governing reactant transport, bubble detachment kinetics, and the construction of triple-phase boundaries, thus serving as a key factor to enhance both catalytic activity and durability. This review highlights the synergistic interplay between wettability engineering and multidimensional strategies—including structural engineering, electronic structure modulation, interfacial engineering, and compositional regulation—revealing the intrinsic logic of cross-scale optimization for superior electrode performance. Furthermore, we propose a self-supported electrode design framework centered on the ternary synergy of “structure–wettability–electronics” and provide perspectives on dynamic wettability regulation and advanced in situ characterization techniques for predictive design and mechanistic elucidation. Collectively, this review aims to deliver theoretical insights and technological outlooks toward the rational design and industrial translation of high-performance self-supported electrodes for electrochemical water splitting.</div></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"60 ","pages":"Article 101977"},"PeriodicalIF":9.7,"publicationDate":"2026-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145689269","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The discovery of high-temperature superconductivity in Ruddlesden-Popper (RP) nickelates has attracted significant attention. Bulk superconductivity emerges under pressure in trilayer nickelates La4Ni3O10-δ (Tc ≈ 30 K) and Pr4Ni3O10-δ (Tc ≈ 40.5 K), where the reduced ionic radius of Pr3+ may generate internal chemical pressure and enhance Tc. However, synthesizing trilayer RP phases with smaller rare-earth elements (Ln) is extremely challenging. So far, only the La, Pr, and Nd analogues have been synthesized with stable phases in the single rare-earth form. Here we report the first successful high-pressure and high-temperature (HPHT) synthesis of samarium-based compound Sm4Ni3O10-δ. Magnetization and transport measurements consistently confirm a density wave (DW) transition at ∼180 K at ambient pressure. Through a careful fitting to the structural data of Sm4Ni3O10-δ, it is found that the bond angle of (Ni−O−Ni) associating with the interlayer apical oxygen is much smaller than 180°, which was assumed to be the key factor for the occurrence of superconductivity. By applying pressures up to 80 GPa, despite partial suppression of insulating behavior and the DW order, but superconductivity is not observed in our present study. Density functional theory calculations suggest that the and are separated from other t2g orbitals and make a primary contribution to the density of states at the Fermi energy. The newly synthesized trilayer nickelate Sm4Ni3O10-δ offers a unique platform for probing the fundamental physics of RP nickelates.
{"title":"Expanding the trilayer Ruddlesden-Popper nickelate family: Synthesis and characterization of Sm4Ni3O10-δ single crystals","authors":"Yuhang Zhang, Tian-Yi Li, Xiyu Zhu, Ying-Jie Zhang, Shengtai Fan, Qing Li, Hai-Hu Wen","doi":"10.1016/j.mtphys.2025.102005","DOIUrl":"10.1016/j.mtphys.2025.102005","url":null,"abstract":"<div><div>The discovery of high-temperature superconductivity in Ruddlesden-Popper (RP) nickelates has attracted significant attention. Bulk superconductivity emerges under pressure in trilayer nickelates La<sub>4</sub>Ni<sub>3</sub>O<sub>10-δ</sub> (<em>T</em><sub>c</sub> ≈ 30 K) and Pr<sub>4</sub>Ni<sub>3</sub>O<sub>10-δ</sub> (<em>T</em><sub>c</sub> ≈ 40.5 K), where the reduced ionic radius of Pr<sup>3+</sup> may generate internal chemical pressure and enhance <em>T</em><sub>c</sub>. However, synthesizing trilayer RP phases with smaller rare-earth elements (<em>Ln</em>) is extremely challenging. So far, only the La, Pr, and Nd analogues have been synthesized with stable phases in the single rare-earth form. Here we report the first successful high-pressure and high-temperature (HPHT) synthesis of samarium-based compound Sm<sub>4</sub>Ni<sub>3</sub>O<sub>10-δ</sub>. Magnetization and transport measurements consistently confirm a density wave (DW) transition at ∼180 K at ambient pressure. Through a careful fitting to the structural data of Sm<sub>4</sub>Ni<sub>3</sub>O<sub>10-δ</sub>, it is found that the bond angle of (Ni−O−Ni) associating with the interlayer apical oxygen is much smaller than 180°, which was assumed to be the key factor for the occurrence of superconductivity. By applying pressures up to 80 GPa, despite partial suppression of insulating behavior and the DW order, but superconductivity is not observed in our present study. Density functional theory calculations suggest that the <span><math><mrow><mn>3</mn><msub><mi>d</mi><msup><mi>z</mi><mn>2</mn></msup></msub></mrow></math></span> and <span><math><mrow><mn>3</mn><msub><mi>d</mi><mrow><msup><mi>x</mi><mn>2</mn></msup><mo>−</mo><msup><mi>y</mi><mn>2</mn></msup></mrow></msub></mrow></math></span> are separated from other <em>t</em><sub><em>2g</em></sub> orbitals and make a primary contribution to the density of states at the Fermi energy. The newly synthesized trilayer nickelate Sm<sub>4</sub>Ni<sub>3</sub>O<sub>10-δ</sub> offers a unique platform for probing the fundamental physics of RP nickelates.</div></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"60 ","pages":"Article 102005"},"PeriodicalIF":9.7,"publicationDate":"2026-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145844913","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}