Nature Materials最新文献

英文中文

Nonlinear phase-matched van der Waals crystals integrated on optical fibres 非线性相位匹配范德华晶体集成在光纤上

IF 41.2 1区材料科学 Q1 CHEMISTRY, PHYSICAL

Nature Materials

Pub Date : 2026-01-13 DOI: 10.1038/s41563-025-02461-x

Kaifeng Lin, Guangjie Yao, Jiahui Shao, Yilong You, Jiajie Qi, Daopeng Yuan, Yijun Wang, Muhong Wu, Lingjun Kong, Xiangdong Zhang, Enge Wang, Zhipei Sun, Hao Hong, Kaihui Liu

High optical nonlinearity can enable classical and quantum functionalities in all-fibre laser systems. However, despite long-standing efforts to exploit second-order optical nonlinearity in conventional all-fibre systems, nonlinear optical conversion efficiencies remain modest. Here we demonstrate all-fibre integration of twist-phase-matched rhombohedral boron nitride (rBN) flakes on the end facet of optical fibres for second-harmonic generation (SHG) and spontaneous parametric downconversion (SPDC). We provide local and global optimization of the interflake twist angles for phase-matching design, achieving an SHG conversion efficiency of ~4.1% and an SPDC coincidence rate of ~90 in van der Waals crystals integrated on optical fibre devices. Finally, we design an all-fibre frequency-doubling ultrafast laser by integrating a multifunctional nonlinear crystal of a graphene/rBN heterostructure to simultaneously generate mode-locked pulses and intracavity SHG emission. This work establishes a route for developing high-efficiency, second-order nonlinear functionalities, such as optical parametric oscillators, optical modulators and entangled photon sources, in all-fibre lasers.

高光学非线性可以实现全光纤激光系统的经典和量子功能。然而，尽管在传统全光纤系统中开发二阶光学非线性的长期努力，非线性光转换效率仍然不高。在这里，我们展示了扭转相位匹配菱形氮化硼（rBN）薄片在光纤端面的全光纤集成，用于二次谐波产生（SHG）和自发参数下变频（SPDC）。我们为相位匹配设计提供了局部和全局优化的片间扭角，实现了集成在光纤器件上的范德瓦尔斯晶体的SHG转换效率~4.1%和SPDC符合率~90。最后，我们通过集成石墨烯/rBN异质结构的多功能非线性晶体来设计全光纤倍频超快激光器，同时产生锁模脉冲和腔内SHG发射。这项工作为开发全光纤激光器中高效、二阶非线性功能（如光参量振荡器、光调制器和纠缠光子源）开辟了一条途径。

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引用次数: 0

Designing heterostructured materials. 设计异质结构材料。

IF 38.5 1区材料科学 Q1 CHEMISTRY, PHYSICAL

Nature Materials

Pub Date : 2026-01-13 DOI: 10.1038/s41563-025-02444-y

Hao Zhou, Xiaolei Wu, David Srolovitz, Yuntian Zhu

Heterostructures are composed of spatially distinct zones with differing mechanical and/or physical properties. When carefully engineered, these architectures can exhibit superior performance compared with their homogeneous counterparts. However, not all heterostructures inherently lead to a pronounced improvement in properties. Realizing the full potential of complex heterostructures requires a rigorous understanding of the structure-property relationships and mechanisms related to inter-zone interactions. This knowledge is essential if the heterostructure effect is to be effectively harnessed and the overall performance of the material optimized. Here we examine the fundamental mechanisms underlying the unusual mechanical properties of heterostructured materials, highlighting the important role of interactive coupling in the heterozone boundary-affected regions. We outline strategies for evaluating the effects that arise from heterostructures, in particular the heterodeformation-induced stress. We also provide guidelines for designing heterostructured materials with optimal mechanical properties, and discuss future directions for property design and characterization development.

异质结构是由具有不同力学和/或物理性质的空间上不同的区域组成的。如果经过精心设计，这些体系结构可以表现出比同类体系结构更好的性能。然而，并不是所有的异质结构都会导致性能的显著改善。实现复杂异质结构的全部潜力需要对结构-性质关系和与区间相互作用相关的机制有严格的理解。如果要有效地利用异质结构效应和优化材料的整体性能，这些知识是必不可少的。本文研究了异质结构材料异常力学性能的基本机制，强调了异质区边界影响区域中相互作用耦合的重要作用。我们概述了评估异质结构产生的影响的策略，特别是异质变形引起的应力。我们还提供了设计具有最佳力学性能的异质结构材料的指导方针，并讨论了性能设计和表征发展的未来方向。

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引用次数: 0

Wafer-scale monolayer dielectric integration on atomically thin semiconductors 原子薄半导体上的晶圆级单层介电集成。

IF 38.5 1区材料科学 Q1 CHEMISTRY, PHYSICAL

Nature Materials

Pub Date : 2026-01-12 DOI: 10.1038/s41563-025-02445-x

Zhenzhen Shen, Haoqi Wu, Chunsen Liu, Zizheng Liu, Yongbo Jiang, Tanjun Wang, Peng Zhou

A promising strategy for further miniaturizing metal–oxide–semiconductor field-effect transistors is the use of ultrathin two-dimensional channel materials. However, achieving robust dielectric integration with a sub-1-nm capacitance equivalent thickness (CET) remains challenging. Here we present a wafer-scale monolayer MoO3, transformed from MoS2, which can be seamlessly integrated with atomically thin semiconductors. Its atomically flat surface and the strong electronegativity of Mo6+ further enable the uniform deposition of high-κ dielectrics. Utilizing the 0.96-nm-CET MoO3/HfO2 as the dielectric, the top-gated p-type (n-type) two-dimensional transistors show a high ON/OFF ratio of 6.5 × 106 (3.2 × 108) and a steep subthreshold swing of 60.8 (63.1) mV dec−1. Statistical analysis of a 1,024-device array achieves a high yield of 92.2%. Furthermore, when monolayer MoO3 is used as the top-gated dielectric with an ultimately scaled CET of 0.64 nm, the gate leakage current meets the low-power limit standard (1.5 × 10−2 A cm−2) over the entire bias range. Our study provides a scalable approach for the integration of ultralow-CET dielectrics on two-dimensional materials, marking a critical step towards their future industrial deployment. Wafer-scale monolayer MoO3 enables the integration of dielectrics with ultralow capacitance equivalent thickness on atomically thin semiconductors, achieving high yield and effective operation of n-type and p-type top-gated transistors.

进一步小型化金属氧化物半导体场效应晶体管的一个有前途的策略是使用超薄的二维通道材料。然而，实现低于1nm的电容等效厚度（CET）的稳健介电集成仍然具有挑战性。在这里，我们提出了一种晶圆级单层MoO3，由MoS2转化而来，可以与原子薄半导体无缝集成。其原子平面和Mo6+的强电负性进一步使高κ介电体的均匀沉积成为可能。利用0.96 nm- cet的MoO3/HfO2作为介质，顶门控p型（n型）二维晶体管具有6.5 × 106 （3.2 × 108）的高开/关比和60.8 (63.1)mV / dec1的陡亚阈值摆幅。统计分析1024个器件阵列的良率达到了92.2%。此外，当使用单层MoO3作为顶门控电介质时，栅极泄漏电流在整个偏置范围内满足低功率极限标准（1.5 × 10-2 A cm-2）。我们的研究为在二维材料上集成超低cet介电体提供了一种可扩展的方法，标志着迈向其未来工业部署的关键一步。

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引用次数: 0

Experimental observation of liquid–solid transition of nanoconfined water at ambient temperature 室温下纳米密闭水液固转变的实验观察

IF 41.2 1区材料科学 Q1 CHEMISTRY, PHYSICAL

Nature Materials

Pub Date : 2026-01-12 DOI: 10.1038/s41563-025-02456-8

Wentian Zheng, Shichen Zhang, Jian Jiang, Yipeng He, Rainer Stöhr, Andrej Denisenko, Jörg Wrachtrup, Xiao Cheng Zeng, Ke Bian, En-Ge Wang, Ying Jiang

Nanoconfined water exhibits many abnormal properties compared with bulk water. However, the origin of those anomalies remains controversial due to the lack of experimental access to the molecular-level details of the hydrogen-bonding network of water within a nanocavity. Here we address this issue by combining scanning probe microscopy with nitrogen-vacancy-centre-based quantum sensing. Such a technique allows us to characterize both dynamics and structure of water confined between a hexagonal boron nitride flake and a hydrophilic diamond surface by nanoscale nuclear magnetic resonance. We observe a liquid–solid phase transition of nanoconfined water at ambient temperature with an onset confinement size of ~1.6 nm, below which the water diffusion is considerably suppressed and the hydrogen-bonding network of water becomes structurally ordered. The complete crystallization is observed below a confinement size of ~1 nm. The liquid–solid transition is further confirmed by molecular dynamics simulation. These findings shed new light on the phase transition of nanoconfined water and may form a unified picture for understanding water anomalies at the nanoscale.

与散装水相比，纳米承压水表现出许多异常性质。然而，由于缺乏对纳米空腔内水的氢键网络的分子水平细节的实验途径，这些异常的起源仍然存在争议。在这里，我们通过结合扫描探针显微镜和基于氮空位中心的量子传感来解决这个问题。这种技术使我们能够通过纳米级核磁共振表征六方氮化硼薄片和亲水金刚石表面之间的水的动力学和结构。在常温下，纳米约束水发生了液固相变，起始约束尺寸为~1.6 nm，在此范围内，水的扩散受到抑制，水的氢键网络结构有序。在约1 nm的约束尺寸下，观察到完整的结晶。分子动力学模拟进一步证实了液固转变。这些发现为纳米承压水的相变提供了新的线索，并可能为理解纳米尺度上的水异常形成统一的图景。

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引用次数: 0

Flexible two-dimensional neural sensors 柔性二维神经传感器

IF 41.2 1区材料科学 Q1 CHEMISTRY, PHYSICAL

Nature Materials

Pub Date : 2026-01-09 DOI: 10.1038/s41563-025-02460-y

Hyung Joon Shim, Dion Khodagholy

引用次数: 0

Gate structuring on n-type bilayer MoS2 field-effect transistors for ultrahigh current density. 超高电流密度的n型双层MoS2场效应晶体管的栅极结构。

IF 41.2 1区材料科学 Q1 CHEMISTRY, PHYSICAL

Nature Materials

Pub Date : 2026-01-09 DOI: 10.1038/s41563-025-02452-y

Junyoung Kwon,Kyoung Yeon Kim,Dongwon Jang,Min Seok Yoo,Alum Jung,Dong-Su Ko,Yoonhoo Ha,Huije Ryu,Woon Ih Choi,Yeonchoo Cho,Changhyun Kim,Eunji Yang,Eun Kyu Lee,Chang-Seok Lee,Sang Won Kim,Uihui Kwon,Dae Sin Kim,Sung Kyu Lim,Kyung-Eun Byun,Minsu Seol,Jeehwan Kim

The foundry industry and academia are confronting the limits of Moore's Law scaling for logic transistors. Silicon field‑effect transistors (FETs) now rely on gate‑all‑around structures and ultrathin channels, even at the cost of decreased carrier mobility and complex fabrication processes. Two‑dimensional (2D) semiconductors offer a promising alternative because they retain their crystalline quality at atomic thicknesses. Nonetheless, whether they truly exhibit higher performance than silicon remains questionable. Here, by implementing a dual‑gate structure on bilayer MoS2 FETs, we mitigate the fringing‑field barrier created by the elevated top contact and achieve high carrier densities without increasing fabrication complexity. Simulations and statistical analysis confirm that the dual‑gate compensates the fringe field, enabling a drain current of 1.55 mA µm-1 even with conventional gold contacts. Quantum‑transport simulation indicates that, with further gate‑length and equivalent‑oxide‑thickness scaling, the on-state current can reach levels comparable to silicon FETs at the 3-nm node, and monolithic 3D integration can extend the applicability of dual‑gate 2D transistors to future logic technologies.

晶圆代工行业和学术界正面临着逻辑晶体管摩尔定律缩放的极限。硅场效应晶体管（fet）现在依赖于栅极四面结构和超薄通道，即使以降低载流子迁移率和复杂的制造工艺为代价。二维（2D）半导体提供了一个很有前途的选择，因为它们在原子厚度上保持了晶体质量。尽管如此，它们是否真的表现出比硅更高的性能仍然值得怀疑。在这里，通过在双层MoS2 fet上实现双栅极结构，我们减轻了由于顶部接触升高而产生的边缘场势垒，并在不增加制造复杂性的情况下实现了高载流子密度。仿真和统计分析证实，双栅极补偿了条纹场，即使使用传统的金触点，也能实现1.55 mAµm-1的漏极电流。量子输运模拟表明，随着栅极长度和等效氧化物厚度的进一步缩放，导通状态电流可以达到与3纳米节点的硅fet相当的水平，单片3D集成可以将双栅极2D晶体管的适用性扩展到未来的逻辑技术。

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引用次数: 0

Electrically writing a magnetic heliknoton in a chiral magnet 在手性磁体中用电写入磁性的日子

IF 41.2 1区材料科学 Q1 CHEMISTRY, PHYSICAL

Nature Materials

Pub Date : 2026-01-07 DOI: 10.1038/s41563-025-02450-0

Long Li, Dongsheng Song, Weiwei Wang, Lingyao Kong, Shuisen Zhang, Ning Wang, Shilei Zhang, Mingliang Tian, Jiadong Zang, Yizhou Liu, Haifeng Du

引用次数: 0

All-nitride superconducting qubits based on atomic layer deposition 基于原子层沉积的全氮超导量子比特

IF 41.2 1区材料科学 Q1 CHEMISTRY, PHYSICAL

Nature Materials

Pub Date : 2026-01-06 DOI: 10.1038/s41563-025-02448-8

Danqing Wang, Yufeng Wu, Naomi Pieczulewski, Prachi Garg, Manuel C. C. Pace, Charlotte G. L. Bøttcher, Baishakhi Mazumder, David A. Muller, Hong X. Tang

引用次数: 0

Monolithic cell-on-memristor architecture enables wafer-scale integration of oscillatory chemoreceptors for bio-realistic gustatory chips 单片细胞-记忆电阻器架构使振荡化学感受器的生物逼真的味觉芯片的晶圆级集成

IF 38.5 1区材料科学 Q1 CHEMISTRY, PHYSICAL

Nature Materials

Pub Date : 2026-01-06 DOI: 10.1038/s41563-025-02436-y

Bowen Zhong, Xiaokun Qin, Hao Xu, Fei Deng, Hailong Wang, Linlin Li, Zhexin Li, Wenxuan Zhang, Zheng Lou, Lili Wang

Array fabrication and the wafer-scale integration of artificial oscillatory chemoreceptors are crucial for enabling biomimetic chips with bio-realistic chemoreception in practical bioapplications. However, existing chemoreceptors based on conventional architectures require sophisticated or non-scalable fabrication techniques due to inherent material or structural defects. Here we introduce a monolithic cell-on-memristor (CoM) chemoreceptive architecture featuring a unique oscillation mechanism for self-powered biosensing and in situ spike encoding. Through rational material selection and complementary metal–oxide–semiconductor-compatible fabrication, we realize the demonstration of a wafer-scale 10 × 10 CoM array with a spatial resolution of 51 pixels per inch and a very small pixel size of 150 μm, with potential for further scaling down. Using its bio-plausible ion-modulated voltage oscillations with spatiotemporal probabilistic spiking information, we exploit the CoM-array-based gustatory chip to replicate gustation for accuracy salty taste classification. Our CoM architecture offers a general and scalable approach for implementing chemoreceptive oscillatory systems aimed at human–machine biointegration applications. The fabrication of conventional artificial chemoreceptors are difficult to scale up. Here a wafer scale cell-on-memristor chemoreceptive array is reported, allowing for self-powered biosensing and in situ spike encoding.

阵列制造和人工振荡化学感受器的晶圆级集成对于在实际生物应用中实现具有生物逼真化学感受器的仿生芯片至关重要。然而，由于固有的材料或结构缺陷，现有的基于传统结构的化学感受器需要复杂或不可扩展的制造技术。在这里，我们介绍了一个单片细胞-忆阻器（CoM）化学接受结构，具有独特的振荡机制，用于自供电生物传感和原位spike编码。通过合理的材料选择和互补的金属氧化物半导体兼容制造，我们实现了一个晶圆级10 × 10 CoM阵列的演示，其空间分辨率为51像素/英寸，像素尺寸非常小，为150 μm，具有进一步缩小的潜力。利用其生物似是而非的离子调制电压振荡和时空概率尖峰信息，我们利用基于com阵列的味觉芯片来复制味觉，以实现准确的咸味分类。我们的CoM架构为实现化学感受振荡系统提供了一种通用的、可扩展的方法，旨在实现人机生物集成应用。传统人工化学感受器的制造难以规模化。本文报道了一种晶圆级细胞-记忆电阻器化学感受阵列，允许自供电生物传感和原位脉冲编码。

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A metastable tetragonal phase in two-dimensional halide perovskite lattices driven by a coherent Higgs mode 由相干希格斯模式驱动的二维卤化物钙钛矿晶格中的亚稳四方相

IF 41.2 1区材料科学 Q1 CHEMISTRY, PHYSICAL

Nature Materials

Pub Date : 2026-01-05 DOI: 10.1038/s41563-025-02433-1

Ayushi Shukla, Sraddha Agrawal, Shoshanna Peifer, Mercouri G. Kanatzidis, Pierre Darancet, Richard D. Schaller

引用次数: 0

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