Optical Materials最新文献

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Quantum-confined CeO2/NiO nanocomposite with tuneable blue emission for LED and photonic applications 具有可调谐蓝光发射的量子约束CeO2/NiO纳米复合材料用于LED和光子应用

IF 4.2 3区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Optical Materials

Pub Date : 2026-01-02 DOI: 10.1016/j.optmat.2026.117842

M.P. Srinivasan , K. Jeevagan , T. Jose Antony , R. Divya , A. Ayeshamariam , N. Punithavelan

In this present work, a hydrothermally synthesised CeO₂/NiO nanocomposite with a novel heterojunction interface, quantum-confined deep-blue emission verified by CIE chromaticity mapping, and superior thermal stability, making it a promising environmentally benign material for high-purity LED and display applications. The formation of individual CeO₂ and NiO phases with strong metal–oxygen bonding was evidenced by structural analysis from XRD and FTIR. At the same time, nanosized particles with well-defined lattice fringes were observed by HRSEM and HRTEM, which favoured the presence of a heterojunction interface. The UV–Vis DRS optical band gap estimation revealed quantum confinement-induced blue-shifted transitions with 3.55 eV and 3.74 eV corresponding to CeO₂ and NiO areas, respectively. Photoluminescence (PL) spectra under 237 nm excitation had a prominent blue emission peaking at 480 nm and were associated with the presence of oxygen vacancies and Ce³⁺/Ce⁴⁺ redox species. The emission was also described through CIE chromaticity mapping, with coordinates (x = 0.1985, y = 0.2253) verifying deep-blue emission with high spectral purity. Thermal analysis showed stability up to 500 °C, which proves the material's stability for device integration. These findings confirm the CeO₂/NiO nanocomposite as a viable blue-emitting material for solid-state lighting and optoelectronic display technologies.

在本研究中，一种水热合成的CeO2/NiO纳米复合材料具有新颖的异质结界面，通过CIE色度映射验证了量子限制的深蓝发射，以及优越的热稳定性，使其成为高纯度LED和显示应用的有前途的环保材料。XRD和FTIR的结构分析证实了CeO2和NiO相的形成具有较强的金属-氧键。同时，HRSEM和HRTEM观察到纳米颗粒具有明确的晶格条纹，有利于异质结界面的存在。紫外-可见DRS光学带隙估计显示CeO2和NiO区分别对应3.55 eV和3.74 eV的量子禁锢诱导蓝移跃迁。237 nm激发下的光致发光（PL）光谱在480 nm处有一个突出的蓝色发射峰，这与氧空位和Ce3+/Ce4+氧化还原物质的存在有关。通过CIE色度映射也描述了发射，坐标（x = 0.1985, y = 0.2253）验证了具有高光谱纯度的深蓝色发射。热分析表明，该材料的稳定性高达500°C，证明了该材料在器件集成方面的稳定性。这些发现证实了CeO2/NiO纳米复合材料是固态照明和光电子显示技术中可行的蓝色发射材料。

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Highly photoluminescent polymer films deposited on glass and flexible substrates based on partially oxidized silicon nanocrystals 基于部分氧化硅纳米晶体的高光致发光聚合物薄膜沉积在玻璃和柔性衬底上

IF 4.2 3区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Optical Materials

Pub Date : 2026-01-02 DOI: 10.1016/j.optmat.2025.117841

A. Coyopol , A.M. Sánchez , A. Alvarado-García , R. Romano-Trujillo , G. García-Salgado , E. Rosendo , C. Morales

In this work, optical properties of Silicon (Si) Oxide powders with Si nanocrystals (Si-nCs) embedded in a polymeric matrix (polymethyl methacrylate-PMMA) on BK7 glass and flexible substrates (acetate) are reported. The Si oxide powders were exfoliated from porous silicon layers (PSLs) with porosities of 57–98.3 % obtained at 65 mA. The PSLs were obtained by electrochemical etching using, Si p-type (110), ρ = 0.25–0.6 Ω-cm. For this, current densities of 65 mA and 35 mA were used with hydrofluoric acid and ethanol solution (Hf:EtOH) in (3:1), (1:3), (1:2), and (1:1) proportions respectively. To passivate and preserve the Photoluminescence (PL), the Si-oxide powders collected from exfoliation of PSLs were immersed at the polymeric matrix and deposited on acetate and BK7 glass substrates by spin-coating method. The PSLs were characterized by Photoluminescence (PL), Scanning Electron Microscopy (SEM) and X-ray spectroscopy (EDS). Subsequently, Si-oxide powders as a polymeric film exhibited strong PL emission either on acetate or on BK7 glass substrates, for which samples were characterized by PL and Raman measurements. The presence of oxidized Si-nCs were detected by Raman measurements, with average sizes between 1 and 1.5 nm, creating radiative defects (Si=O) that could be responsible of PL. The PSLs PL emission maximum position remained almost at the same wavelength even after when it is deposited on the polymer. In this manner, oxidized Si-nCs serve as effective passivating agents for PL.

本文报道了在BK7玻璃和柔性衬底（醋酸盐）上嵌入聚合物基体（聚甲基丙烯酸甲酯- pmma）的硅纳米晶（Si- ncs）氧化硅粉末的光学性质。在65毫安时，从多孔硅层（PSLs）中分离得到孔隙率为57 ~ 98.3%的氧化硅粉末。采用Si p型（110），ρ = 0.25-0.6 Ω-cm电化学刻蚀法制备PSLs。为此，分别以（3:1）、（1:3）、（1:2）和（1:1）比例的氢氟酸和乙醇溶液（Hf:EtOH）的电流密度为65 mA和35 mA。为了钝化和保存光致发光（PL），将从PSLs剥离中收集的si -氧化物粉末浸泡在聚合物基体中，并通过旋涂法沉积在醋酸盐和BK7玻璃衬底上。采用光致发光（PL）、扫描电镜（SEM）和x射线能谱（EDS）对合成的psl进行了表征。随后，硅氧化物粉末作为聚合物薄膜在醋酸盐或BK7玻璃衬底上表现出强烈的PL发射，样品通过PL和拉曼测量进行了表征。通过拉曼测量检测到氧化Si- ncs的存在，其平均尺寸在1到1.5 nm之间，产生可能导致发光的辐射缺陷（Si=O）。即使沉积在聚合物上，psl的发光最大位置也几乎保持在同一波长。通过这种方式，氧化的Si-nCs作为PL的有效钝化剂。

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High-performance self-powered solar-blind ultraviolet photodetector based on GaN/κ-Ga2O3 heterojunction 基于GaN/κ-Ga2O3异质结的高性能自供电太阳盲紫外探测器

IF 4.2 3区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Optical Materials

Pub Date : 2026-01-02 DOI: 10.1016/j.optmat.2026.117843

Qianqian Zhan , Yang Li , Linkai Yue , Mengfan Xu , Xinrui Zhao , Wenxiang Mu , Zhitai Jia

Self-powered solar-blind ultraviolet photodetectors (SBPDs) based on Ga₂O₃ exhibit significant advantages in practical applications due to their high efficiency, low power consumption, and fast response speed. In this study, Sn-doped κ-Ga₂O₃ films were epitaxially grown on GaN/sapphire substrates using a cost-effective and environmentally friendly mist-chemical vapor deposition (Mist-CVD), enabling fabrication of a self-powered SBPD based on a GaN/κ-Ga₂O₃ heterojunction. At zero bias under 254 nm illumination with 500 μW/cm² optical power density, the device exhibited a photocurrent of 1.61 × 10⁻⁷ A, photo-to-dark current ratio of 2.78 × 10³, responsivity of 80.5 mA/W, external quantum efficiency of 39.38 %, detectivity of 1.18 × 10¹² Jones, and rise/decay times of 660 ms/590 ms. This result substantially outperforms those of previously reported self-powered SBPDs based on either β-Ga₂O₃ or amorphous Ga₂O₃. The energy band alignment diagrams were constructed to elucidate the carrier transport mechanism in the self-powered SBPD based on the GaN/κ-Ga₂O₃ heterojunction. The incorporation of Sn substantially enhanced the separation efficiency of photogenerated carriers, consequently improving the photoelectric performance of the device. This study provides a promising strategy for fabricating high-performance Ga₂O₃-based SBPDs.

基于Ga2O3的自供电太阳盲紫外探测器（sbpd）具有效率高、功耗低、响应速度快等特点，在实际应用中具有显著的优势。在本研究中，采用经济高效且环保的雾-化学气相沉积（雾- cvd）技术在GaN/蓝宝石衬底上外延生长sn掺杂的κ-Ga2O3薄膜，从而制备了基于GaN/κ-Ga2O3异质结的自供电SBPD。在254 nm、500 μW/cm2光功率密度的零偏置条件下，器件的光电流为1.61 × 10−7 a，光暗比为2.78 × 103，响应率为80.5 mA/W，外量子效率为39.38%，探测率为1.18 × 1012 Jones，上升/衰减时间为660 ms/590 ms。这一结果大大优于先前报道的基于β-Ga2O3或非晶Ga2O3的自供电sbpd。构建了能带排列图，阐明了GaN/κ-Ga2O3异质结自供电SBPD中的载流子输运机制。Sn的加入大大提高了光生载流子的分离效率，从而提高了器件的光电性能。该研究为制备高性能ga2o3基sbpd提供了一种有前途的策略。

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