Pub Date : 2024-09-12DOI: 10.1016/j.optmat.2024.116107
Due to its exceptional thermal stability and high conductivity, Yttrium stabilized zirconia (YSZ) has become an essential material in the field of infrared camouflage. Although YSZ exhibits relatively low emissivity within the 3–5 μm wavelength range, the increasing operating temperatures of aircraft necessitate further reduction in infrared emissivity within this specific band, in accordance with the Wien displacement law. This study focuses on the preparation of ceramic samples of YSZ doped with varying concentrations of Yb2O3 through a high-temperature solid-state reaction. It aims to investigate the influence of different doping concentrations on the microstructure, crystal structure, and infrared radiation characteristics of YSZ ceramic blocks. The experimental results demonstrated that the addition of Yb2O3 induces changes in the grain size and phase content of YSZ. Notably, as the amount of Yb2O3 doping increases, the infrared emissivity of YSZ samples in the 3–5 μm wavelength range exhibits a pattern of initial decrease followed by an increase. Remarkably, at a doping amount of 3 % mol, YSZ ceramics demonstrated the lowest emissivity, with the average emissivity of the 3–5 μm wavelength range decreasing from 0.41 to 0.38.
{"title":"Exploring the mechanism of infrared emissivity control in YSZ-based ceramics doped with Yb2O3","authors":"","doi":"10.1016/j.optmat.2024.116107","DOIUrl":"10.1016/j.optmat.2024.116107","url":null,"abstract":"<div><p>Due to its exceptional thermal stability and high conductivity, Yttrium stabilized zirconia (YSZ) has become an essential material in the field of infrared camouflage. Although YSZ exhibits relatively low emissivity within the 3–5 μm wavelength range, the increasing operating temperatures of aircraft necessitate further reduction in infrared emissivity within this specific band, in accordance with the Wien displacement law. This study focuses on the preparation of ceramic samples of YSZ doped with varying concentrations of Yb<sub>2</sub>O<sub>3</sub> through a high-temperature solid-state reaction. It aims to investigate the influence of different doping concentrations on the microstructure, crystal structure, and infrared radiation characteristics of YSZ ceramic blocks. The experimental results demonstrated that the addition of Yb<sub>2</sub>O<sub>3</sub> induces changes in the grain size and phase content of YSZ. Notably, as the amount of Yb<sub>2</sub>O<sub>3</sub> doping increases, the infrared emissivity of YSZ samples in the 3–5 μm wavelength range exhibits a pattern of initial decrease followed by an increase. Remarkably, at a doping amount of 3 % mol, YSZ ceramics demonstrated the lowest emissivity, with the average emissivity of the 3–5 μm wavelength range decreasing from 0.41 to 0.38.</p></div>","PeriodicalId":19564,"journal":{"name":"Optical Materials","volume":null,"pages":null},"PeriodicalIF":3.8,"publicationDate":"2024-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142228503","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-11DOI: 10.1016/j.optmat.2024.116110
The long-duration memory effect in thermotropic liquid crystal (LC) materials has long been a topic of substantial interest and numerous pioneering works. Although the idea of exploring the memory effect had been started from the nematic (N) phase of LC itself, but due to its very short duration, it was soon shifted to the other LC phases such as ferroelectric LC (FLC) or their derivatives and composites. Therefore, we demonstrate here the prolonged memory effect in a smectic A (SmA) phase of a pristine thermotropic LC material namely 4-octyl-4′-cyanobiphenyl (8CB). The memory effect has also been investigated in the N phase to estimate its duration as compared to the SmA phase. To examine the memory effect, firstly, we measured the dielectric permittivity using the dielectric spectroscopic technique with and without 40 V DC biasing. Furthermore, these results have been confirmed by means of optical textures recorded through a polarizing optical microscope. Moreover, we have also observed the removal and retrieval of two stable states by sequent application of heat and DC biasing to examine the cyclability of the LC compound under testing. We anticipate that our results will definitely bridge the gap that occurred in the advancement of emerging futuristic LC-based memory devices.
热致性液晶(LC)材料中的长时记忆效应长期以来一直是一个备受关注的话题,并引发了大量的开创性工作。虽然探索记忆效应的想法是从向列液晶(N)相本身开始的,但由于其持续时间非常短,很快就转移到了其他液晶相,如铁电液晶(FLC)或其衍生物和复合材料。因此,我们在此展示了原始热致性 LC 材料 Smectic A(SmA)相(即 4-辛基-4′-氰基联苯(8CB))中的长期记忆效应。与 SmA 相相比,还对 N 相的记忆效应进行了研究,以估计其持续时间。为了研究记忆效应,我们首先使用介电光谱技术测量了有 40 V 直流偏压和无 40 V 直流偏压时的介电常数。此外,通过偏振光学显微镜记录的光学纹理也证实了这些结果。此外,我们还通过加热和直流偏压的连续应用,观察到了两种稳定状态的消除和恢复,从而检验了正在测试的 LC 化合物的可循环性。我们预计,我们的研究成果必将弥补基于 LC 的新兴未来存储器件在发展过程中出现的差距。
{"title":"Prolonged memory effect in smectic A phase of a thermotropic liquid crystal material","authors":"","doi":"10.1016/j.optmat.2024.116110","DOIUrl":"10.1016/j.optmat.2024.116110","url":null,"abstract":"<div><p>The long-duration memory effect in thermotropic liquid crystal (LC) materials has long been a topic of substantial interest and numerous pioneering works. Although the idea of exploring the memory effect had been started from the nematic (N) phase of LC itself, but due to its very short duration, it was soon shifted to the other LC phases such as ferroelectric LC (FLC) or their derivatives and composites. Therefore, we demonstrate here the prolonged memory effect in a smectic A (SmA) phase of a pristine thermotropic LC material namely 4-octyl-4′-cyanobiphenyl (8CB). The memory effect has also been investigated in the N phase to estimate its duration as compared to the SmA phase. To examine the memory effect, firstly, we measured the dielectric permittivity using the dielectric spectroscopic technique with and without 40 V DC biasing. Furthermore, these results have been confirmed by means of optical textures recorded through a polarizing optical microscope. Moreover, we have also observed the removal and retrieval of two stable states by sequent application of heat and DC biasing to examine the cyclability of the LC compound under testing. We anticipate that our results will definitely bridge the gap that occurred in the advancement of emerging futuristic LC-based memory devices.</p></div>","PeriodicalId":19564,"journal":{"name":"Optical Materials","volume":null,"pages":null},"PeriodicalIF":3.8,"publicationDate":"2024-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142238464","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-11DOI: 10.1016/j.optmat.2024.116106
In the current study, Sr-doped ZnO thin films were fabricated through a sol-gel route on a silicon substrate (100). The structural, optical, and morphological studies were examined through XRD, UV–vis, PL spectroscopy, and SEM. The crystalline superiority is enhanced through increasing Sr content while the optical bandgap is reduced because of lattice distortion and the production of active imperfections in ZnO, which may be the reason for bandgap tailing. The grain sizes observed are 53, 54, and 60 nm for ZnO, ZnSr1%, and ZnSr2%. Microstructural and strain were explored through Scherrer, W–H, and SSP methods. Furthermore, peak broadening was investigated using these methods. UV–Vis spectroscopy was employed to investigate the band gap of all grown thin films, which are 3.37, 3.28, and 3.20 eV of ZnO, ZnSr1% and ZnSr2%. The optical study was carried out to investigate the band gap, including different parameters such as Absorbance (A), transmittance (T), absorption coefficient (, band gap (Eg) using different methods, band gap by derivative method, urbach energy (Eu), skin depth (δ), optical density (OD), refractive index (n), extinction coefficient (k), optical conductivity (σopt), dielectric constants (εr, εi), and Tan (α) were also explored. PL spectroscopy was used to study the defects in grown thin films. SEM was employed to examine the morphology of all fabricated thin films. ZnO thin film is widely studied for optoelectronics applications.
{"title":"Sr-doped ZnO thin film on a silicon substrate (100) grown by sol-gel method: Structural and optical study","authors":"","doi":"10.1016/j.optmat.2024.116106","DOIUrl":"10.1016/j.optmat.2024.116106","url":null,"abstract":"<div><p>In the current study, Sr-doped ZnO thin films were fabricated through a sol-gel route on a silicon substrate (100). The structural, optical, and morphological studies were examined through XRD, UV–vis, PL spectroscopy, and SEM. The crystalline superiority is enhanced through increasing Sr content while the optical bandgap is reduced because of lattice distortion and the production of active imperfections in ZnO, which may be the reason for bandgap tailing. The grain sizes observed are 53, 54, and 60 nm for ZnO, ZnSr1%, and ZnSr2%. Microstructural and strain were explored through Scherrer, W–H, and SSP methods. Furthermore, peak broadening was investigated using these methods. UV–Vis spectroscopy was employed to investigate the band gap of all grown thin films, which are 3.37, 3.28, and 3.20 eV of ZnO, ZnSr1% and ZnSr2%. The optical study was carried out to investigate the band gap, including different parameters such as Absorbance <em>(A),</em> transmittance <em>(T),</em> absorption coefficient (<span><math><mrow><mi>α</mi><mo>)</mo></mrow></math></span>, band gap <em>(E</em><sub><em>g</em></sub><em>)</em> using different methods, band gap by derivative method, urbach energy <em>(E</em><sub><em>u</em></sub><em>),</em> skin depth <em>(δ),</em> optical density <em>(OD),</em> refractive index <em>(n)</em>, extinction coefficient <em>(k)</em>, optical conductivity (<em>σ</em><sub><em>opt</em></sub>), dielectric constants <em>(ε</em><sub><em>r</em></sub><em>, ε</em><sub><em>i</em></sub><em>)</em>, and Tan <em>(α)</em> were also explored. PL spectroscopy was used to study the defects in grown thin films. SEM was employed to examine the morphology of all fabricated thin films. ZnO thin film is widely studied for optoelectronics applications.</p></div>","PeriodicalId":19564,"journal":{"name":"Optical Materials","volume":null,"pages":null},"PeriodicalIF":3.8,"publicationDate":"2024-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142238581","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-11DOI: 10.1016/j.optmat.2024.116100
The lithium-calcium-borate (LiCaBO3) glass co-doped with Ce3+ and Sm3+ ions were successfully fabricated by the conventional melt quenching method. Annealing heat at 710 °C for 2 or 4 h formed the nanocrystals in the glass matrix. The X-ray diffraction patterns have proved the formation of the nanocrystals in materials. The appearance of these nanocrystals changed the glass lattice structure as well as the physical and optical properties of the material. The radiative properties of the LiCaBO3 glass and glass ceramics were analyzed within the framework of Judd-Ofelt theory. The thermoluminescence (TL) properties of the materials were studied by analyzing the glow curve and the TL spectra. The application potential of the materials in the field of dosimetry was proposed based on the investigation results of the parameters such as TL response to irradiation dose, fading rates, and the standard deviation.
{"title":"Studying the structure, photoluminescence and thermoluminescence properties of LiCaBO3 pseudoternary glass-ceramic co-doped with Ce3+, Sm3+ ions","authors":"","doi":"10.1016/j.optmat.2024.116100","DOIUrl":"10.1016/j.optmat.2024.116100","url":null,"abstract":"<div><p>The lithium-calcium-borate (LiCaBO<sub>3</sub>) glass co-doped with Ce<sup>3+</sup> and Sm<sup>3+</sup> ions were successfully fabricated by the conventional melt quenching method. Annealing heat at 710 °C for 2 or 4 h formed the nanocrystals in the glass matrix. The X-ray diffraction patterns have proved the formation of the nanocrystals in materials. The appearance of these nanocrystals changed the glass lattice structure as well as the physical and optical properties of the material. The radiative properties of the LiCaBO<sub>3</sub> glass and glass ceramics were analyzed within the framework of Judd-Ofelt theory. The thermoluminescence (TL) properties of the materials were studied by analyzing the glow curve and the TL spectra. The application potential of the materials in the field of dosimetry was proposed based on the investigation results of the parameters such as TL response to irradiation dose, fading rates, and the standard deviation.</p></div>","PeriodicalId":19564,"journal":{"name":"Optical Materials","volume":null,"pages":null},"PeriodicalIF":3.8,"publicationDate":"2024-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142238580","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-11DOI: 10.1016/j.optmat.2024.116105
A set of powder samples of Y3AlGa4O12 doped with Dy3+ and Sm3+ with different concentration of Sm3+ ion were prepared via sol-gel synthesis. X-ray diffraction (XRD), scanning electron microscope (SEM), energy dispersive (EDS), Fourier transform infrared (FTIR) and photoluminescence spectral studies were carried out. All the diffraction peaks matched the cubic lattice Y3AlGa4O12, as given by the XRD. The SEM images revealed aggregated spherical particles ranging from 50 to 130 nm. The EDS analysis confirmed the presence of the initial chemicals in the synthesized samples. FTIR spectrum was used to examine the vibrational modes in the sample. Under a 366 nm excitation wavelength, the emission spectrum showed the peaks at 492 nm (blue), 580 nm (yellow), 673 nm (red), and 760 nm (near-infrared) corresponding to the characteristic transitions 4F9/2 → 6H15/2,13/2,11/2,9/2 of the Dy3+ ion, respectively. In comparison, the peaks at 568 nm, 614 nm, 664 nm, and 711 nm corresponded to the characteristic transitions 4G5/2 → 6H5/2,7/2,9/2,11/2 of the Sm3+ ion. Under near ultraviolet light excitation, the superposition of these blue, yellow and red colours produced excellent white light emission. The intensities of these transitions varied with the concentration of Sm3+ ion and the excitation wavelength. The emission spectrum of Dy3+ overlapped with the excitation spectrum of Sm3+, indicated possible energy transfer from Dy3+ to Sm3+. According to Inokuti-Hirayama's theory of energy transfer, the mechanism of energy transfer was understood to be quadrupole-quadrupole interaction. The CIE chromaticity co-ordinates and correlated colour temperature values showed that these samples were suitable for light-emitting diode applications.
{"title":"Colour tunability of Dy3+ & Sm3+ activated yttrium aluminium gallium nanocrystals for display applications","authors":"","doi":"10.1016/j.optmat.2024.116105","DOIUrl":"10.1016/j.optmat.2024.116105","url":null,"abstract":"<div><p>A set of powder samples of Y<sub>3</sub>AlGa<sub>4</sub>O<sub>12</sub> doped with Dy<sup>3+</sup> and Sm<sup>3+</sup> with different concentration of Sm<sup>3+</sup> ion were prepared via sol-gel synthesis. X-ray diffraction (XRD), scanning electron microscope (SEM), energy dispersive (EDS), Fourier transform infrared (FTIR) and photoluminescence spectral studies were carried out. All the diffraction peaks matched the cubic lattice Y<sub>3</sub>AlGa<sub>4</sub>O<sub>12</sub>, as given by the XRD. The SEM images revealed aggregated spherical particles ranging from 50 to 130 nm. The EDS analysis confirmed the presence of the initial chemicals in the synthesized samples. FTIR spectrum was used to examine the vibrational modes in the sample. Under a 366 nm excitation wavelength, the emission spectrum showed the peaks at 492 nm (blue), 580 nm (yellow), 673 nm (red), and 760 nm (near-infrared) corresponding to the characteristic transitions <sup><em>4</em></sup><em>F</em><sub><em>9/2</em></sub> → <sup><em>6</em></sup><em>H</em><sub><em>15/2,13/2,11/2,9/2</em></sub> of the Dy<sup>3+</sup> ion, respectively. In comparison, the peaks at 568 nm, 614 nm, 664 nm, and 711 nm corresponded to the characteristic transitions <sup><em>4</em></sup><em>G</em><sub><em>5/2</em></sub> → <sup><em>6</em></sup><em>H</em><sub><em>5/2,7/2,9/2,11/2</em></sub> of the Sm<sup>3+</sup> ion. Under near ultraviolet light excitation, the superposition of these blue, yellow and red colours produced excellent white light emission. The intensities of these transitions varied with the concentration of Sm<sup>3+</sup> ion and the excitation wavelength. The emission spectrum of Dy<sup>3+</sup> overlapped with the excitation spectrum of Sm<sup>3+</sup>, indicated possible energy transfer from Dy<sup>3+</sup> to Sm<sup>3+</sup>. According to Inokuti-Hirayama's theory of energy transfer, the mechanism of energy transfer was understood to be quadrupole-quadrupole interaction. The CIE chromaticity co-ordinates and correlated colour temperature values showed that these samples were suitable for light-emitting diode applications.</p></div>","PeriodicalId":19564,"journal":{"name":"Optical Materials","volume":null,"pages":null},"PeriodicalIF":3.8,"publicationDate":"2024-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142232325","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-10DOI: 10.1016/j.optmat.2024.116096
GaN-based nanorod light emitting diodes (LEDs) are key to the development of high brightness, small pixel size, and long lifetime for high-resolution display applications. To manufacture individual nanorod LEDs as compact light sources, it is necessary to separate the nanorod LEDs from the substrate and transfer them to the electrode. Dielectrophoresis (DEP) is a highly suitable technique for transferring the individual nanorod LEDs. However, there are still challenges in achieving a high alignment yield. In this work, nanorod LEDs are successfully fabricated and separated to enhance the horizontal alignment in interdigitated electrodes via insulator-based DEP (iDEP). In iDEP, a structure is formed by inserting an insulating layer between the electrodes. This structure manipulates the electric field generated around the electrodes due to polarization by the insulating layer. This results in a relatively uniform electric field distribution on the surface of the insulating layer, thereby enhancing the horizontal alignment of the nanorod LEDs. Herein, the iDEP structure achieves significant nanorod LED alignment yield of up to 91.9 %, compared to 45.5 % for the electrode-based DEP (eDEP) technique. Furthermore, the use of a patterned insulator makes it possible to restrict 1 or 2 aligned nanorod LEDs within a specific pixel region, which is suitable for high-resolution display technologies based on nanorod LEDs.
氮化镓基纳米棒发光二极管(LED)是开发高分辨率显示应用的高亮度、小像素和长寿命的关键。要制造作为紧凑型光源的单个纳米棒发光二极管,必须将纳米棒发光二极管从衬底上分离出来并转移到电极上。Dielectrophoresis (DEP) 是一种非常适合转移单个纳米棒 LED 的技术。然而,在实现高对准率方面仍存在挑战。在这项工作中,通过基于绝缘体的电泳技术(iDEP),成功地制造并分离了纳米棒 LED,从而提高了交错电极中的水平排列。在 iDEP 中,通过在电极之间插入绝缘层形成了一种结构。由于绝缘层的极化作用,该结构可操控电极周围产生的电场。这使得绝缘层表面的电场分布相对均匀,从而增强了纳米棒 LED 的水平排列。在这种情况下,iDEP 结构实现了高达 91.9% 的显著纳米棒 LED 对准率,而基于电极的 DEP(eDEP)技术的对准率仅为 45.5%。此外,图案绝缘体的使用使得在特定像素区域内限制 1 或 2 个对准的纳米棒 LED 成为可能,这适用于基于纳米棒 LED 的高分辨率显示技术。
{"title":"Enhanced horizontal alignment of InGaN/GaN nanorod LEDs via insulator-based dielectrophoresis","authors":"","doi":"10.1016/j.optmat.2024.116096","DOIUrl":"10.1016/j.optmat.2024.116096","url":null,"abstract":"<div><p>GaN-based nanorod light emitting diodes (LEDs) are key to the development of high brightness, small pixel size, and long lifetime for high-resolution display applications. To manufacture individual nanorod LEDs as compact light sources, it is necessary to separate the nanorod LEDs from the substrate and transfer them to the electrode. Dielectrophoresis (DEP) is a highly suitable technique for transferring the individual nanorod LEDs. However, there are still challenges in achieving a high alignment yield. In this work, nanorod LEDs are successfully fabricated and separated to enhance the horizontal alignment in interdigitated electrodes via insulator-based DEP (iDEP). In iDEP, a structure is formed by inserting an insulating layer between the electrodes. This structure manipulates the electric field generated around the electrodes due to polarization by the insulating layer. This results in a relatively uniform electric field distribution on the surface of the insulating layer, thereby enhancing the horizontal alignment of the nanorod LEDs. Herein, the iDEP structure achieves significant nanorod LED alignment yield of up to 91.9 %, compared to 45.5 % for the electrode-based DEP (eDEP) technique. Furthermore, the use of a patterned insulator makes it possible to restrict 1 or 2 aligned nanorod LEDs within a specific pixel region, which is suitable for high-resolution display technologies based on nanorod LEDs.</p></div>","PeriodicalId":19564,"journal":{"name":"Optical Materials","volume":null,"pages":null},"PeriodicalIF":3.8,"publicationDate":"2024-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142228502","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-10DOI: 10.1016/j.optmat.2024.116078
Our paper presents a combined experimental and theoretical study of the lattice dynamics of Bi12GeO20 crystal. Polarized Raman spectra were measured in two x-ray oriented single crystals. In a crystal of cubic symmetry, phonon modes of A- and E-types are spectroscopically indistinguishable. Using a special experimental technique, we separated the phonon modes that transform according to A and E irreducible representations. Since the number of E-type lines observed in Raman scattering is higher than theoretically allowed by group theory, we performed a first-principles calculation of the Bi12GeO20 lattice dynamics to accurately identify the symmetry of phonon modes. All experimental lines observed in Raman scattering are classified according to irreducible representations of the cubic I23 group. Using samples of different thicknesses, 10 mm and 0.120 mm, we have demonstrated that the optical activity plays an insignificant role at Raman backscattering in Bi12GeO20 crystal.
我们的论文对 Bi12GeO20 晶体的晶格动力学进行了实验和理论相结合的研究。我们在两个 X 射线取向的单晶体中测量了偏振拉曼光谱。在立方对称晶体中,A 型和 E 型声子模式在光谱上是无法区分的。利用一种特殊的实验技术,我们分离出了根据 A 型和 E 型不可还原表征转换的声子模式。由于在拉曼散射中观察到的 E 型线的数量高于群论理论允许的数量,我们对 Bi12GeO20 晶格动力学进行了第一性原理计算,以准确识别声子模式的对称性。在拉曼散射中观察到的所有实验线都是根据立方 I23 群的不可还原表示分类的。通过使用不同厚度(10 毫米和 0.120 毫米)的样品,我们证明了光学活性在 Bi12GeO20 晶体的拉曼反向散射中起着微不足道的作用。
{"title":"Lattice dynamics of Bi12GeO20 crystal: Polarized Raman scattering and first-principles analysis","authors":"","doi":"10.1016/j.optmat.2024.116078","DOIUrl":"10.1016/j.optmat.2024.116078","url":null,"abstract":"<div><p>Our paper presents a combined experimental and theoretical study of the lattice dynamics of Bi<sub>12</sub>GeO<sub>20</sub> crystal. Polarized Raman spectra were measured in two x-ray oriented single crystals. In a crystal of cubic symmetry, phonon modes of A- and E-types are spectroscopically indistinguishable. Using a special experimental technique, we separated the phonon modes that transform according to A and E irreducible representations. Since the number of E-type lines observed in Raman scattering is higher than theoretically allowed by group theory, we performed a first-principles calculation of the Bi<sub>12</sub>GeO<sub>20</sub> lattice dynamics to accurately identify the symmetry of phonon modes. All experimental lines observed in Raman scattering are classified according to irreducible representations of the cubic I23 group. Using samples of different thicknesses, 10 mm and 0.120 mm, we have demonstrated that the optical activity plays an insignificant role at Raman backscattering in Bi<sub>12</sub>GeO<sub>20</sub> crystal.</p></div>","PeriodicalId":19564,"journal":{"name":"Optical Materials","volume":null,"pages":null},"PeriodicalIF":3.8,"publicationDate":"2024-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142168634","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-10DOI: 10.1016/j.optmat.2024.116097
All inorganic perovskite quantum dots (PQDs) have great application prospects in the lighting and display fields due to their excellent photoelectric properties. However, their instabilities in water and high temperature lead to photoluminescence (PL) quenching, and colloidal synthesis methods usually use a mass of organic solvents, limiting their practical application. Herein, we successfully synthesized mesoporous silica (m-SiO2) and employed a confinement effect to successfully synthesize CsPbBr3@m-SiO2 powders using a simple high-temperature solid-phase synthesis method in an air atmosphere. When the m-SiO2 content is 0.2 g, optimal green luminous intensity is achieved with a peak wavelength of 522 nm and a full width at half maximum (FWHM) of 23 nm. CsPbBr3@m-SiO2 powders have excellent thermal stability, the PL spectral shapes do not change and the PL intensity can maintain 88.1 % of the original level after 10 heating cycles (200 °C). In addition, CsPbBr3@m-SiO2 powders exhibit excellent water stability, which can still be well dispersed after 30 days exposure to water, and the PL strength remain basically unchanged. This study presents a novel approach for the advancement of stable perovskite luminescent materials.
{"title":"CsPbBr3 perovskite quantum dots by mesoporous silica encapsulated for enhancing water and thermal stability via high temperature solid state method","authors":"","doi":"10.1016/j.optmat.2024.116097","DOIUrl":"10.1016/j.optmat.2024.116097","url":null,"abstract":"<div><p>All inorganic perovskite quantum dots (PQDs) have great application prospects in the lighting and display fields due to their excellent photoelectric properties. However, their instabilities in water and high temperature lead to photoluminescence (PL) quenching, and colloidal synthesis methods usually use a mass of organic solvents, limiting their practical application. Herein, we successfully synthesized mesoporous silica (m-SiO<sub>2</sub>) and employed a confinement effect to successfully synthesize CsPbBr<sub>3</sub>@m-SiO<sub>2</sub> powders using a simple high-temperature solid-phase synthesis method in an air atmosphere. When the m-SiO<sub>2</sub> content is 0.2 g, optimal green luminous intensity is achieved with a peak wavelength of 522 nm and a full width at half maximum (FWHM) of 23 nm. CsPbBr<sub>3</sub>@m-SiO<sub>2</sub> powders have excellent thermal stability, the PL spectral shapes do not change and the PL intensity can maintain 88.1 % of the original level after 10 heating cycles (200 °C). In addition, CsPbBr<sub>3</sub>@m-SiO<sub>2</sub> powders exhibit excellent water stability, which can still be well dispersed after 30 days exposure to water, and the PL strength remain basically unchanged. This study presents a novel approach for the advancement of stable perovskite luminescent materials.</p></div>","PeriodicalId":19564,"journal":{"name":"Optical Materials","volume":null,"pages":null},"PeriodicalIF":3.8,"publicationDate":"2024-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142168635","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-10DOI: 10.1016/j.optmat.2024.116090
In this work, resistive type photodetectors were fabricated using Gd3+ ions doped NiO nanoparticles to improve the detection of ultraviolet (UV) light. The occurrence of the simple cubic phase in NiO systems has been shown by X-ray diffraction patterns. The crystalline size of the NiO nanoparticles doped with different concentrations of Gd3+ at levels of pure, 1 %, 2 %, and 3 % were 6 nm, 8 nm, 9 nm, and 12 nm, respectively. The presence of dopants in the material was established by the Raman spectrum analysis. Transmission electron microscopy (TEM) pictures were used to validate the morphological properties of Gd3+ doped NiO nanoparticles nanoparticles at different degrees of dopant concentration (0 %, 1 %, 2 % and 3 %). The introduction and concentration of dopants alter the shape of NiO material. Based on the findings of UV–visible absorption spectroscopic studies, it can be concluded that the addition of Gd3+ ions to the system improved the absorption characteristics. The measured bandgap values for various degrees of Gd3+ doping, namely 0 %, 1 %, 2 %, and 3 %, are 3.51 eV, 3.45 eV, 3.36 eV, and 3.23 eV, respectively. According to the measured photoluminescence spectrum, Gd3+ ions may efficiently trap and maintain excited electrons within an energy level between the ground and excited states. This process greatly extends the lifespan of excitons from immediate recombination. The use of Gd3+-doped NiO sensors in UV photodetection resulted in a significant increase in conductivity and photocurrent. The photodetector fabricated using a 3 % concentration of Gd3+ doped NiO, has a responsivity of 24 × 10−2 AW−1, a detectivity of 14 × 109 Jones, and an external quantum efficiency (EQE) of 62 %.
{"title":"Synthesis, characterization and effective UV photo-sensing properties of Ga3+ doped NiO nanoparticles","authors":"","doi":"10.1016/j.optmat.2024.116090","DOIUrl":"10.1016/j.optmat.2024.116090","url":null,"abstract":"<div><p>In this work, resistive type photodetectors were fabricated using Gd<sup>3+</sup> ions doped NiO nanoparticles to improve the detection of ultraviolet (UV) light. The occurrence of the simple cubic phase in NiO systems has been shown by X-ray diffraction patterns. The crystalline size of the NiO nanoparticles doped with different concentrations of Gd<sup>3+</sup> at levels of pure, 1 %, 2 %, and 3 % were 6 nm, 8 nm, 9 nm, and 12 nm, respectively. The presence of dopants in the material was established by the Raman spectrum analysis. Transmission electron microscopy (TEM) pictures were used to validate the morphological properties of Gd<sup>3+</sup> doped NiO nanoparticles nanoparticles at different degrees of dopant concentration (0 %, 1 %, 2 % and 3 %). The introduction and concentration of dopants alter the shape of NiO material. Based on the findings of UV–visible absorption spectroscopic studies, it can be concluded that the addition of Gd<sup>3+</sup> ions to the system improved the absorption characteristics. The measured bandgap values for various degrees of Gd<sup>3+</sup> doping, namely 0 %, 1 %, 2 %, and 3 %, are 3.51 eV, 3.45 eV, 3.36 eV, and 3.23 eV, respectively. According to the measured photoluminescence spectrum, Gd<sup>3+</sup> ions may efficiently trap and maintain excited electrons within an energy level between the ground and excited states. This process greatly extends the lifespan of excitons from immediate recombination. The use of Gd<sup>3+</sup>-doped NiO sensors in UV photodetection resulted in a significant increase in conductivity and photocurrent. The photodetector fabricated using a 3 % concentration of Gd<sup>3+</sup> doped NiO, has a responsivity of 24 × 10<sup>−2</sup> AW<sup>−1</sup>, a detectivity of 14 × 10<sup>9</sup> Jones, and an external quantum efficiency (EQE) of 62 %.</p></div>","PeriodicalId":19564,"journal":{"name":"Optical Materials","volume":null,"pages":null},"PeriodicalIF":3.8,"publicationDate":"2024-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142172446","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-10DOI: 10.1016/j.optmat.2024.116095
The two-dimensional organic-inorganic hybrid perovskites demonstrate significant potential for use in photodetectors and white light-emitting diodes. In this study, we successfully synthesized pure and Mn2+-doped (PEA)2PbBr4 perovskite via rapid crystallization. The morphology, structure, magnetic properties, and optical characteristics of them were comprehensively characterized. The unusual behavior of free exciton emission is mainly attributed to electron-phonon coupling and negative thermal quenching effects. The self-trapped exciton emission results from self-trapped excited states and electron-phonon coupling. Moreover, energy transfer phenomena are observed between free exciton emission, self-trapped exciton emission, and Mn2+ emission. These findings offer valuable insights into the luminescence mechanism of two-dimensional layered perovskites.
{"title":"Investigation of the temperature-dependent photoluminescence characteristics in Mn2+-doped (PEA)2PbBr4 perovskite","authors":"","doi":"10.1016/j.optmat.2024.116095","DOIUrl":"10.1016/j.optmat.2024.116095","url":null,"abstract":"<div><p>The two-dimensional organic-inorganic hybrid perovskites demonstrate significant potential for use in photodetectors and white light-emitting diodes. In this study, we successfully synthesized pure and Mn<sup>2+</sup>-doped (PEA)<sub>2</sub>PbBr<sub>4</sub> perovskite via rapid crystallization. The morphology, structure, magnetic properties, and optical characteristics of them were comprehensively characterized. The unusual behavior of free exciton emission is mainly attributed to electron-phonon coupling and negative thermal quenching effects. The self-trapped exciton emission results from self-trapped excited states and electron-phonon coupling. Moreover, energy transfer phenomena are observed between free exciton emission, self-trapped exciton emission, and Mn<sup>2+</sup> emission. These findings offer valuable insights into the luminescence mechanism of two-dimensional layered perovskites.</p></div>","PeriodicalId":19564,"journal":{"name":"Optical Materials","volume":null,"pages":null},"PeriodicalIF":3.8,"publicationDate":"2024-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142168610","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}