Pub Date : 1994-08-07DOI: 10.1109/ISAF.1994.522481
M. Kuwabara, E. Matsuyama, S. Takahashi, H. Shimooka, Y. Urakawa
Undoped barium titanate ceramics exhibiting a distinct positive temperature coefficient of resistivity (PTCR) effect have been produced by sintering high-purity barium titanate powder compacts in the temperature range 1300-1400/spl deg/C in air. The formation of core-shell type duplex microstructures in the materials covered with a nearly full dense layer is responsible for this phenomenon, where undoped barium titanate ceramics (which are normally insulating) were converted to semiconductors and, moreover, exhibited distinct PTCR effects. The core-shell grain structure is described as a duplex microstructure consisting of a large-grained (/spl ap/50 /spl mu/m) semiconducting phase inside and a small-grained (<10 /spl mu/m) insulating phase outside.
{"title":"PTCR characteristics in undoped barium titanate ceramics with core-shell type duplex microstructures","authors":"M. Kuwabara, E. Matsuyama, S. Takahashi, H. Shimooka, Y. Urakawa","doi":"10.1109/ISAF.1994.522481","DOIUrl":"https://doi.org/10.1109/ISAF.1994.522481","url":null,"abstract":"Undoped barium titanate ceramics exhibiting a distinct positive temperature coefficient of resistivity (PTCR) effect have been produced by sintering high-purity barium titanate powder compacts in the temperature range 1300-1400/spl deg/C in air. The formation of core-shell type duplex microstructures in the materials covered with a nearly full dense layer is responsible for this phenomenon, where undoped barium titanate ceramics (which are normally insulating) were converted to semiconductors and, moreover, exhibited distinct PTCR effects. The core-shell grain structure is described as a duplex microstructure consisting of a large-grained (/spl ap/50 /spl mu/m) semiconducting phase inside and a small-grained (<10 /spl mu/m) insulating phase outside.","PeriodicalId":20488,"journal":{"name":"Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics","volume":"9 1","pages":"758-759"},"PeriodicalIF":0.0,"publicationDate":"1994-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76580202","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-08-07DOI: 10.1109/ISAF.1994.522464
Y. Poplavko, V. Moskalyuk, A.I. Timofeyev, Y. Prokopenko
The multifunction properties of GaAs and other III-V semi-insulating crystals can be expanded by the artificial decreasing of their electric response symmetry that could be transformed from piezo- into a pyroelectric class. An artificial pyroelectricity of III-V type semiconductors can form a basis for one-crystal pyroelectric sensors. The voltage sensitivity of GaAs (111)-cut corresponds to one of PZT pyroelectric ceramics so the GaAs wafer could be used as a thermal-to-electric transducer in a new microelectronic device named "pyrotransistor" that is uncooled far infrared detector based on MESFET technology.
{"title":"Pyrotransistor-GaAs FET with a \"pyroelectric wafer\" gate","authors":"Y. Poplavko, V. Moskalyuk, A.I. Timofeyev, Y. Prokopenko","doi":"10.1109/ISAF.1994.522464","DOIUrl":"https://doi.org/10.1109/ISAF.1994.522464","url":null,"abstract":"The multifunction properties of GaAs and other III-V semi-insulating crystals can be expanded by the artificial decreasing of their electric response symmetry that could be transformed from piezo- into a pyroelectric class. An artificial pyroelectricity of III-V type semiconductors can form a basis for one-crystal pyroelectric sensors. The voltage sensitivity of GaAs (111)-cut corresponds to one of PZT pyroelectric ceramics so the GaAs wafer could be used as a thermal-to-electric transducer in a new microelectronic device named \"pyrotransistor\" that is uncooled far infrared detector based on MESFET technology.","PeriodicalId":20488,"journal":{"name":"Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics","volume":"1 1","pages":"698-700"},"PeriodicalIF":0.0,"publicationDate":"1994-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83272982","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-08-07DOI: 10.1109/ISAF.1994.522390
C. J. Gaskey, K. Udayakumar, H.D. Chen, L. Cross
Thin films of lead zirconate stannate titanate (PSZT) with slight additions of niobium and lanthanum have been prepared by the sol-gel, spin coat process. Antiferroelectric tetragonal and orthorhombic compositions have been evaluated on the criteria of P-E loop squareness, maximum polarization and field induced strain for the applications of energy storage and conversion in integrated devices. The orthorhombic compositions in both the niobium and lanthanum doped systems have shown square loop hysteretic behavior with large switchable polarizations (30-40 /spl mu/C/cm/sup 2/), and field-induced strains of 0.33% have been measured in the niobium doped system, thus both systems provide attractive possibilities for practical use.
{"title":"Antiferroelectric to ferroelectric phase switching thin films in the lead zirconate stannate titanate solid solution system","authors":"C. J. Gaskey, K. Udayakumar, H.D. Chen, L. Cross","doi":"10.1109/ISAF.1994.522390","DOIUrl":"https://doi.org/10.1109/ISAF.1994.522390","url":null,"abstract":"Thin films of lead zirconate stannate titanate (PSZT) with slight additions of niobium and lanthanum have been prepared by the sol-gel, spin coat process. Antiferroelectric tetragonal and orthorhombic compositions have been evaluated on the criteria of P-E loop squareness, maximum polarization and field induced strain for the applications of energy storage and conversion in integrated devices. The orthorhombic compositions in both the niobium and lanthanum doped systems have shown square loop hysteretic behavior with large switchable polarizations (30-40 /spl mu/C/cm/sup 2/), and field-induced strains of 0.33% have been measured in the niobium doped system, thus both systems provide attractive possibilities for practical use.","PeriodicalId":20488,"journal":{"name":"Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics","volume":"10 1","pages":"416-418"},"PeriodicalIF":0.0,"publicationDate":"1994-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81512102","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-08-07DOI: 10.1109/ISAF.1994.522305
A. Sidorkin
The mechanism of interactions of domain boundaries in ferroelectric-ferroelastic crystals with different (uncharge, charge and elastic types) defects are investigated. The diffusion of defects to boundaries and the processes of the domain walls interacting with defects are studied. The values of domain contribution in dielectric permeability and the coercive field determined by the storage time and the number of switching cycles for the material with initial random defect distribution are calculated.
{"title":"The domain mechanism of aging and degeneration of ferroelectric material","authors":"A. Sidorkin","doi":"10.1109/ISAF.1994.522305","DOIUrl":"https://doi.org/10.1109/ISAF.1994.522305","url":null,"abstract":"The mechanism of interactions of domain boundaries in ferroelectric-ferroelastic crystals with different (uncharge, charge and elastic types) defects are investigated. The diffusion of defects to boundaries and the processes of the domain walls interacting with defects are studied. The values of domain contribution in dielectric permeability and the coercive field determined by the storage time and the number of switching cycles for the material with initial random defect distribution are calculated.","PeriodicalId":20488,"journal":{"name":"Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics","volume":"2 1","pages":"91-94"},"PeriodicalIF":0.0,"publicationDate":"1994-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78830800","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-08-07DOI: 10.1109/ISAF.1994.522352
R. Maalal, M. Manier, J. Mercurio, B. Frit
Room and high temperature X-ray diffraction, DSC, dilatometric and dielectric measurements have shown that the mixed Aurivillius phase Bi/sub 7/Ti/sub 4/NbO/sub 21/ presents two characteristic temperatures. The first one-close to 675/spl deg/C-seems to be attributed to a ferroelectric-paraelectric transition connected with a structural change from orthorhombic to tetragonal. The second one, strongly observed by dielectric measurements concerns a possible ferroelastic-paraelastic phase transition.
{"title":"Ferroelectric properties of the mixed Aurivillius phase Bi/sub 7/Ti/sub 4/NbO/sub 21/","authors":"R. Maalal, M. Manier, J. Mercurio, B. Frit","doi":"10.1109/ISAF.1994.522352","DOIUrl":"https://doi.org/10.1109/ISAF.1994.522352","url":null,"abstract":"Room and high temperature X-ray diffraction, DSC, dilatometric and dielectric measurements have shown that the mixed Aurivillius phase Bi/sub 7/Ti/sub 4/NbO/sub 21/ presents two characteristic temperatures. The first one-close to 675/spl deg/C-seems to be attributed to a ferroelectric-paraelectric transition connected with a structural change from orthorhombic to tetragonal. The second one, strongly observed by dielectric measurements concerns a possible ferroelastic-paraelastic phase transition.","PeriodicalId":20488,"journal":{"name":"Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics","volume":"11 1","pages":"257-260"},"PeriodicalIF":0.0,"publicationDate":"1994-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88682756","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-08-07DOI: 10.1109/ISAF.1994.522351
O. Elkechai, J. P. Mercurio
The study of the Na/sub 0.5/Bi/sub 0.5/TiO/sub 3/-K/sub 0.5/Bi/sub 0.5/TiO/sub 3/, Na/sub 0.5/Bi/sub 0.5/TiO/sub 3/-PbTiO/sub 3/ and K/sub 0.5/Bi/sub 0.5/TiO/sub 3/-PbTiO/sub 3/ systems was carried our using X-ray diffraction, DSC and dielectric measurements. The limits of the rhombohedral (Na/sub 0.5/Bi/sub 0.5/TiO/sub 3/-rich side) and orthorhombic (K/sub 0.5/Bi/sub 0.5/TiO/sub 3/, and PbTiO/sub 3/-rich side) solid solutions were determined, as well as the evolutions of their lattice parameters as a function of composition. Ceramic materials have been prepared by natural sintering (1090-1220/spl deg/C/0.5 h) of powders obtained by solid state reaction (900-1000/spl deg/C/20 h) of the corresponding oxides and carbonates. The dielectric permittivities of these materials have been measured in a wide frequency range between 20 and 800/spl deg/C. The results showed that they all are ferroelectric at room temperature and some of them exhibit a relaxer-type behaviour. Several specular compositions showed the best piezoelectric characteristics for this type of ceramic materials.
{"title":"Ferroelectric ceramics in the Na/sub 0.5/Bi/sub 0.5/TiO/sub 3/-K/sub 0.5/Bi/sub 0.5/TiO/sub 3/, Na/sub 0.5/Bi/sub 0.5/TiO/sub 3/-PbTiO/sub 3/ and K/sub 0.5/Bi/sub 0.5/TiO/sub 3/-PbTiO/sub 3/ systems","authors":"O. Elkechai, J. P. Mercurio","doi":"10.1109/ISAF.1994.522351","DOIUrl":"https://doi.org/10.1109/ISAF.1994.522351","url":null,"abstract":"The study of the Na/sub 0.5/Bi/sub 0.5/TiO/sub 3/-K/sub 0.5/Bi/sub 0.5/TiO/sub 3/, Na/sub 0.5/Bi/sub 0.5/TiO/sub 3/-PbTiO/sub 3/ and K/sub 0.5/Bi/sub 0.5/TiO/sub 3/-PbTiO/sub 3/ systems was carried our using X-ray diffraction, DSC and dielectric measurements. The limits of the rhombohedral (Na/sub 0.5/Bi/sub 0.5/TiO/sub 3/-rich side) and orthorhombic (K/sub 0.5/Bi/sub 0.5/TiO/sub 3/, and PbTiO/sub 3/-rich side) solid solutions were determined, as well as the evolutions of their lattice parameters as a function of composition. Ceramic materials have been prepared by natural sintering (1090-1220/spl deg/C/0.5 h) of powders obtained by solid state reaction (900-1000/spl deg/C/20 h) of the corresponding oxides and carbonates. The dielectric permittivities of these materials have been measured in a wide frequency range between 20 and 800/spl deg/C. The results showed that they all are ferroelectric at room temperature and some of them exhibit a relaxer-type behaviour. Several specular compositions showed the best piezoelectric characteristics for this type of ceramic materials.","PeriodicalId":20488,"journal":{"name":"Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics","volume":"27 1","pages":"253-256"},"PeriodicalIF":0.0,"publicationDate":"1994-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82636658","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-08-07DOI: 10.1109/ISAF.1994.522313
C. Millar, B. Andersen, E. Ringgard, W. Wolny, J. Ricote, L. Pardo
For many applications, such as medical array transducers, the frequency of use of ceramics is limited by their grain size and porosity content. Here, the microstructure of two commercial soft PZT ceramics (with /spl epsiv//sub r/ of 1800 and 4000) is optimised through a combined sintering and HIP study. The study includes the effect of sintering temperature (T=1100 to 1260/spl deg/C) and HIP conditions (T=1000/spl deg/C, P=50 to 200 MPa and t=1 to 4 h) on the microstructure and dielectric and piezoelectric properties. The properties obtained are compared with those of the conventionally prepared ceramics.
{"title":"Fabrication of high density, fine-grained PZT ceramics using a post-sinter HIP treatment","authors":"C. Millar, B. Andersen, E. Ringgard, W. Wolny, J. Ricote, L. Pardo","doi":"10.1109/ISAF.1994.522313","DOIUrl":"https://doi.org/10.1109/ISAF.1994.522313","url":null,"abstract":"For many applications, such as medical array transducers, the frequency of use of ceramics is limited by their grain size and porosity content. Here, the microstructure of two commercial soft PZT ceramics (with /spl epsiv//sub r/ of 1800 and 4000) is optimised through a combined sintering and HIP study. The study includes the effect of sintering temperature (T=1100 to 1260/spl deg/C) and HIP conditions (T=1000/spl deg/C, P=50 to 200 MPa and t=1 to 4 h) on the microstructure and dielectric and piezoelectric properties. The properties obtained are compared with those of the conventionally prepared ceramics.","PeriodicalId":20488,"journal":{"name":"Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics","volume":"120 1","pages":"118-121"},"PeriodicalIF":0.0,"publicationDate":"1994-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87744576","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-08-07DOI: 10.1109/ISAF.1994.522379
T. Okawa, H. Utaki, T. Takada
Sumitomo Metal Industries, Ltd. (SMI) has developed and commercialized microwave dielectric ceramics with variable characteristics. We present and discuss the application of microwave ceramics at one of the ceramic components manufacturers. Microwave devices, such as co-axial dielectrics and the high frequency capacitor, are introduced. Further, a multi-layer dielectric resonator and a voltage control oscillator (VCO), which use the developed low firing materials, are also discussed.
{"title":"The application of microwave ceramics","authors":"T. Okawa, H. Utaki, T. Takada","doi":"10.1109/ISAF.1994.522379","DOIUrl":"https://doi.org/10.1109/ISAF.1994.522379","url":null,"abstract":"Sumitomo Metal Industries, Ltd. (SMI) has developed and commercialized microwave dielectric ceramics with variable characteristics. We present and discuss the application of microwave ceramics at one of the ceramic components manufacturers. Microwave devices, such as co-axial dielectrics and the high frequency capacitor, are introduced. Further, a multi-layer dielectric resonator and a voltage control oscillator (VCO), which use the developed low firing materials, are also discussed.","PeriodicalId":20488,"journal":{"name":"Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics","volume":"81 14","pages":"367-371"},"PeriodicalIF":0.0,"publicationDate":"1994-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91406317","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-08-07DOI: 10.1109/ISAF.1994.522361
C. Richard, R. Ting, C. Audoly
Piezoelectric 1.3 composites of PZT-epoxy and PZT-polyurethane compositions were developed for investigations in low-frequency acoustic applications. Samples with different PZT volume fractions and varying PZT rod aspect ratios (from 4/spl times/4/spl times/9 to 1/spl times/1/spl times/9 mm/sup 3/) were fabricated by using the "dice and fill" method. Experimental measurement in the 3.3 mode in air was carried out by using a laser-Doppler vibrometry (LDV) technique. Strain profiles of the composite sample driven by a low-frequency ac electric field excitation was obtained. The result showed that PZT rod aspect ratio has a drastic effect on composite performance. A quasi-static model based on an isolated 1.3 composite unit-cell was developed to account for the stress transfer at the PZT-polymer interface. Analysis result showed that an aspect ratio of 20 or higher is necessary for low frequency sensing or projecting application of 1.3 piezocomposites. For use in the 3.3 mode, a soft polymer was shown to be preferred, since the longitudinal clamping of the PZT rod is greater for hard resins.
{"title":"Development of 1-3 PZT-polymer composite for low frequency acoustical applications","authors":"C. Richard, R. Ting, C. Audoly","doi":"10.1109/ISAF.1994.522361","DOIUrl":"https://doi.org/10.1109/ISAF.1994.522361","url":null,"abstract":"Piezoelectric 1.3 composites of PZT-epoxy and PZT-polyurethane compositions were developed for investigations in low-frequency acoustic applications. Samples with different PZT volume fractions and varying PZT rod aspect ratios (from 4/spl times/4/spl times/9 to 1/spl times/1/spl times/9 mm/sup 3/) were fabricated by using the \"dice and fill\" method. Experimental measurement in the 3.3 mode in air was carried out by using a laser-Doppler vibrometry (LDV) technique. Strain profiles of the composite sample driven by a low-frequency ac electric field excitation was obtained. The result showed that PZT rod aspect ratio has a drastic effect on composite performance. A quasi-static model based on an isolated 1.3 composite unit-cell was developed to account for the stress transfer at the PZT-polymer interface. Analysis result showed that an aspect ratio of 20 or higher is necessary for low frequency sensing or projecting application of 1.3 piezocomposites. For use in the 3.3 mode, a soft polymer was shown to be preferred, since the longitudinal clamping of the PZT rod is greater for hard resins.","PeriodicalId":20488,"journal":{"name":"Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics","volume":"41 1","pages":"291-294"},"PeriodicalIF":0.0,"publicationDate":"1994-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91180120","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-08-07DOI: 10.1109/ISAF.1994.522453
A. Patel, P. Osbond, N. M. Shorrocks, R. Twiney, R. Whatmore, R. Watton
The pyroelectric effect in ferroelectric materials has long been used for the detection and imaging of long wavelength infra-red radiation. Lead scandium tantalate (PST) has been shown to have exceptionally good pyroelectric figures of merit, especially for small detectors of the type involved in the large arrays needed for uncooled solid state thermal imaging. This paper will review the properties of PST in relation to those of other materials which have been considered for use in this role and discuss how the inclusion of dopants can be used to modify the properties of the material in a way which would be beneficial to certain modes of detector operation, particularly with respect to the elimination of the requirement of cooling. Single element detectors and linear and two dimensional arrays have been made using PST. Their properties are compared with those of similar devices made using conventional pyroelectric ceramics. Ferroelectric thin films can now be made using sol-gel techniques whose figure-of-merit are comparable with those of bulk ceramic materials and the properties of these will be reviewed in relation to those of the ceramics discussed above and their potential for device applications discussed.
{"title":"Ferroelectric ceramics and thin films for uncooled thermal imaging arrays","authors":"A. Patel, P. Osbond, N. M. Shorrocks, R. Twiney, R. Whatmore, R. Watton","doi":"10.1109/ISAF.1994.522453","DOIUrl":"https://doi.org/10.1109/ISAF.1994.522453","url":null,"abstract":"The pyroelectric effect in ferroelectric materials has long been used for the detection and imaging of long wavelength infra-red radiation. Lead scandium tantalate (PST) has been shown to have exceptionally good pyroelectric figures of merit, especially for small detectors of the type involved in the large arrays needed for uncooled solid state thermal imaging. This paper will review the properties of PST in relation to those of other materials which have been considered for use in this role and discuss how the inclusion of dopants can be used to modify the properties of the material in a way which would be beneficial to certain modes of detector operation, particularly with respect to the elimination of the requirement of cooling. Single element detectors and linear and two dimensional arrays have been made using PST. Their properties are compared with those of similar devices made using conventional pyroelectric ceramics. Ferroelectric thin films can now be made using sol-gel techniques whose figure-of-merit are comparable with those of bulk ceramic materials and the properties of these will be reviewed in relation to those of the ceramics discussed above and their potential for device applications discussed.","PeriodicalId":20488,"journal":{"name":"Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics","volume":"81 1","pages":"647-652"},"PeriodicalIF":0.0,"publicationDate":"1994-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90481554","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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