Pub Date : 1994-08-07DOI: 10.1109/ISAF.1994.522400
S. Majumder, D. C. Agrawal, Y. N. Mohapatra, V. N. Kulkarni
Factors controlling the formation of the perovskite phase in sol-gel prepared PZT film were studied. Perovskite was found to form quite easily, even in very thin films on sapphire, polycrystalline Al/sub 2/O/sub 3/ and NaCl but only in relatively thick films on quartz, glass and Si. Formation of the perovskite phase is also favoured in (a) films with low Zr/Ti ratio and high Pb content, (b) films heated rapidly to annealing temperature and (c) films annealed in N/sub 2/ ambient. RBS studies show that large deficiency of Pb develops in films which remain in the pyrochlore structure due to reaction at the interface or due to diffusion into the interface. The initial transformation from amorphous to pyrochlore is believed to be due to enhanced strain energy barrier for the amorphous/spl rarr/perovskite transformation.
{"title":"Mechanisms controlling phase formation in PZT thin films","authors":"S. Majumder, D. C. Agrawal, Y. N. Mohapatra, V. N. Kulkarni","doi":"10.1109/ISAF.1994.522400","DOIUrl":"https://doi.org/10.1109/ISAF.1994.522400","url":null,"abstract":"Factors controlling the formation of the perovskite phase in sol-gel prepared PZT film were studied. Perovskite was found to form quite easily, even in very thin films on sapphire, polycrystalline Al/sub 2/O/sub 3/ and NaCl but only in relatively thick films on quartz, glass and Si. Formation of the perovskite phase is also favoured in (a) films with low Zr/Ti ratio and high Pb content, (b) films heated rapidly to annealing temperature and (c) films annealed in N/sub 2/ ambient. RBS studies show that large deficiency of Pb develops in films which remain in the pyrochlore structure due to reaction at the interface or due to diffusion into the interface. The initial transformation from amorphous to pyrochlore is believed to be due to enhanced strain energy barrier for the amorphous/spl rarr/perovskite transformation.","PeriodicalId":20488,"journal":{"name":"Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics","volume":"160 1","pages":"454-456"},"PeriodicalIF":0.0,"publicationDate":"1994-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83177143","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-08-07DOI: 10.1109/ISAF.1994.522503
B. Jin, S. Erdei, A. Bhalla
Micro-probe Raman spectroscopy is used for studying positional inhomogeneity in alanine-doped TGS crystals. 20 data points are measured along the c- and a-axes in b-plane. Several known Raman peaks are observed unchanged, but most other peaks are found to be changed remarkably. The major difference in spectra are found to be related to SO/sub 4/ vibrations. The vibrational frequencies are found to be lowered near the seed position. The most unstable spectra are detected in the vicinity of the seed region.
{"title":"Inhomogeneity study of alanine and valine-doped TGS crystal using micro-probe Raman spectroscopy","authors":"B. Jin, S. Erdei, A. Bhalla","doi":"10.1109/ISAF.1994.522503","DOIUrl":"https://doi.org/10.1109/ISAF.1994.522503","url":null,"abstract":"Micro-probe Raman spectroscopy is used for studying positional inhomogeneity in alanine-doped TGS crystals. 20 data points are measured along the c- and a-axes in b-plane. Several known Raman peaks are observed unchanged, but most other peaks are found to be changed remarkably. The major difference in spectra are found to be related to SO/sub 4/ vibrations. The vibrational frequencies are found to be lowered near the seed position. The most unstable spectra are detected in the vicinity of the seed region.","PeriodicalId":20488,"journal":{"name":"Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics","volume":"1 1","pages":"821-824"},"PeriodicalIF":0.0,"publicationDate":"1994-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82333977","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-08-07DOI: 10.1109/ISAF.1994.522454
B. Cole, R. Horning, B. Johnson, K. Nguyen, P. Kruse, M. Foote
Honeywell has developed a unique uncooled thermal detector technology based on fabricating thin film structures with temperature sensitive detector materials. High TCR resistive materials such as VOx and YBaCuO, and pyroelectric PbTiO/sub 3/ have been used. Two dimensional imaging arrays of sizes up to 240/spl times/336 have been integrated with Si substrate electronics to achieve temperature sensitivities of less than .04 C operating at room temperature. The thin film detector materials are deposited on microstructure thin film pixels of 2 mil sizes which are subsequently thermally isolated from the substrate by etching away the underlying substrate. The thermal isolation of the microstructure pixel provides the temperature rise and the detector material provides the conversion to an electrical signal.
{"title":"High performance infrared detector arrays using thin film microstructures","authors":"B. Cole, R. Horning, B. Johnson, K. Nguyen, P. Kruse, M. Foote","doi":"10.1109/ISAF.1994.522454","DOIUrl":"https://doi.org/10.1109/ISAF.1994.522454","url":null,"abstract":"Honeywell has developed a unique uncooled thermal detector technology based on fabricating thin film structures with temperature sensitive detector materials. High TCR resistive materials such as VOx and YBaCuO, and pyroelectric PbTiO/sub 3/ have been used. Two dimensional imaging arrays of sizes up to 240/spl times/336 have been integrated with Si substrate electronics to achieve temperature sensitivities of less than .04 C operating at room temperature. The thin film detector materials are deposited on microstructure thin film pixels of 2 mil sizes which are subsequently thermally isolated from the substrate by etching away the underlying substrate. The thermal isolation of the microstructure pixel provides the temperature rise and the detector material provides the conversion to an electrical signal.","PeriodicalId":20488,"journal":{"name":"Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics","volume":"15 1","pages":"653-656"},"PeriodicalIF":0.0,"publicationDate":"1994-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82443022","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-08-07DOI: 10.1109/ISAF.1994.522442
Xiukai Cai, Liang-ying Zhang, X. Yao
The structure of solid solution Bi/sub 1.5/(Zn/sub 1-x/Li/sub x/)Nb/sub 1.5/(O/sub 7-x/F/sub x/) obtained by substitution of oxygen by fluorine in the oxide Bi/sub 1.5/ZnNb/sub 1.5/O/sub 7/ is cubic pyrochlore for 0/spl les/x/spl les/0.15. For 0.80/spl les/x/spl les/1.00, a distorted modification with low symmetry results, while the mixed phases of the above two are formed for other values of x between 0.15 and 0.80. The temperature dependences of the dielectric constants have been studied, and a dielectric anomaly at low temperatures (less than 100/spl deg/C) has been observed.
{"title":"The structure and dielectric properties of new oxyfluorides","authors":"Xiukai Cai, Liang-ying Zhang, X. Yao","doi":"10.1109/ISAF.1994.522442","DOIUrl":"https://doi.org/10.1109/ISAF.1994.522442","url":null,"abstract":"The structure of solid solution Bi/sub 1.5/(Zn/sub 1-x/Li/sub x/)Nb/sub 1.5/(O/sub 7-x/F/sub x/) obtained by substitution of oxygen by fluorine in the oxide Bi/sub 1.5/ZnNb/sub 1.5/O/sub 7/ is cubic pyrochlore for 0/spl les/x/spl les/0.15. For 0.80/spl les/x/spl les/1.00, a distorted modification with low symmetry results, while the mixed phases of the above two are formed for other values of x between 0.15 and 0.80. The temperature dependences of the dielectric constants have been studied, and a dielectric anomaly at low temperatures (less than 100/spl deg/C) has been observed.","PeriodicalId":20488,"journal":{"name":"Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics","volume":"5 1","pages":"604-606"},"PeriodicalIF":0.0,"publicationDate":"1994-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81535964","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-08-07DOI: 10.1109/ISAF.1994.522296
K. Iijima, T. Takeuchi, N. Nagao, R. Takayama, I. Ueda
Highly c-axis oriented Pb/sub 1-x/La/sub x/Ti/sub 1-x/4/O/sub 3/ (PLT) thin films were prepared by rf-magnetron sputtering on (100)MgO and (100)Pt/MgO substrate. These films were characterized by X-ray and electron diffraction and electron microscope. Thin film growth manner and c-axis orientation mechanism were discussed, Dielectric measurement revealed the phase transition behavior of PLT thin films. PLT thin film of x=0.15 shows an extremely large pyroelectric coefficient of 9.5/spl times/10/sup -8/ C/cm/sup 2/ K and low dielectric constant of 330.
{"title":"Preparation and properties of lanthanum modified PbTiO/sub 3/ thin films by rf-magnetron sputtering","authors":"K. Iijima, T. Takeuchi, N. Nagao, R. Takayama, I. Ueda","doi":"10.1109/ISAF.1994.522296","DOIUrl":"https://doi.org/10.1109/ISAF.1994.522296","url":null,"abstract":"Highly c-axis oriented Pb/sub 1-x/La/sub x/Ti/sub 1-x/4/O/sub 3/ (PLT) thin films were prepared by rf-magnetron sputtering on (100)MgO and (100)Pt/MgO substrate. These films were characterized by X-ray and electron diffraction and electron microscope. Thin film growth manner and c-axis orientation mechanism were discussed, Dielectric measurement revealed the phase transition behavior of PLT thin films. PLT thin film of x=0.15 shows an extremely large pyroelectric coefficient of 9.5/spl times/10/sup -8/ C/cm/sup 2/ K and low dielectric constant of 330.","PeriodicalId":20488,"journal":{"name":"Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics","volume":"14 1","pages":"53-58"},"PeriodicalIF":0.0,"publicationDate":"1994-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81539324","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-08-07DOI: 10.1109/ISAF.1994.522490
W. Paradise, F. Wang, G. Haertling
The dielectric properties of electrooptic thin films were varied by altering the stresses placed upon the films. Selected thin films in the lanthanum-modified lead zirconate titanate system (PLZT) were produced by using the dip-coating process and applying various stresses. Comparisons were made among thin films under mechanically applied stresses of different magnitude. Properties measured were dielectric constant, saturation polarization, remanent polarization, coercive field and d-spacing. The effects of the applied stresses on the physical and electrical properties of the films are discussed.
{"title":"Effects of applied stress on the dielectric properties of PLZT thin films","authors":"W. Paradise, F. Wang, G. Haertling","doi":"10.1109/ISAF.1994.522490","DOIUrl":"https://doi.org/10.1109/ISAF.1994.522490","url":null,"abstract":"The dielectric properties of electrooptic thin films were varied by altering the stresses placed upon the films. Selected thin films in the lanthanum-modified lead zirconate titanate system (PLZT) were produced by using the dip-coating process and applying various stresses. Comparisons were made among thin films under mechanically applied stresses of different magnitude. Properties measured were dielectric constant, saturation polarization, remanent polarization, coercive field and d-spacing. The effects of the applied stresses on the physical and electrical properties of the films are discussed.","PeriodicalId":20488,"journal":{"name":"Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics","volume":"66 1674 1","pages":"784-787"},"PeriodicalIF":0.0,"publicationDate":"1994-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83514846","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-08-07DOI: 10.1109/ISAF.1994.522312
C.H. Lin, T. Chin, S. Pei, J.Y. Huang, C.H. Li
PZT (PbTi/sub 1-x/Zr/sub x/O/sub 3/, x=0.52 to 0.64) powders were hydrothermally produced at 200/spl deg/C for 24 hrs, from a solution containing Ti(OH)4/spl middot/xH/sub 2/O, ZrOCl/sub 2/, Pb(CH/sub 3/COO)/sub z/, and NaOH. PZT (x=0.52) powder was also produced by the solid-state sintering method. The powders from both the hydrothermal method and the solid-state reaction method were pressed and subsequently sintered at 1250/spl deg/C for 2 hrs. The characteristic difference of the ceramics produced from both powders were compared with each other. The hydrothermal PZT powders are chemically homogeneous, and around 0.2 /spl mu/m in particle size (numerical average). The solid state reacted powder is a mixture of tetragonal PbTiO/sub 3/, rhombohedral PbZrO/sub 3/, unreacted TiO/sub z/, and unreacted PbO. The PZT ceramics from hydrothermal powders become softer, i.e., lower Ec and higher Pr, as more Zr/sub x/ is added in PZT (higher x value). The K, Q, and Kp values reach maximum when x=0.54. The Q value monotonously increases with the x value and the Kp value likely increase with the grain size of the ceramics. The ceramics from the hydrothermal method have higher density, grain size, dielectric constant, Kp, and lower D and Qm. The hydrothermal powders are much more sinterable than powders produced by the solid-state reaction method.
{"title":"PZT ceramics from hydrothermally synthesized powders","authors":"C.H. Lin, T. Chin, S. Pei, J.Y. Huang, C.H. Li","doi":"10.1109/ISAF.1994.522312","DOIUrl":"https://doi.org/10.1109/ISAF.1994.522312","url":null,"abstract":"PZT (PbTi/sub 1-x/Zr/sub x/O/sub 3/, x=0.52 to 0.64) powders were hydrothermally produced at 200/spl deg/C for 24 hrs, from a solution containing Ti(OH)4/spl middot/xH/sub 2/O, ZrOCl/sub 2/, Pb(CH/sub 3/COO)/sub z/, and NaOH. PZT (x=0.52) powder was also produced by the solid-state sintering method. The powders from both the hydrothermal method and the solid-state reaction method were pressed and subsequently sintered at 1250/spl deg/C for 2 hrs. The characteristic difference of the ceramics produced from both powders were compared with each other. The hydrothermal PZT powders are chemically homogeneous, and around 0.2 /spl mu/m in particle size (numerical average). The solid state reacted powder is a mixture of tetragonal PbTiO/sub 3/, rhombohedral PbZrO/sub 3/, unreacted TiO/sub z/, and unreacted PbO. The PZT ceramics from hydrothermal powders become softer, i.e., lower Ec and higher Pr, as more Zr/sub x/ is added in PZT (higher x value). The K, Q, and Kp values reach maximum when x=0.54. The Q value monotonously increases with the x value and the Kp value likely increase with the grain size of the ceramics. The ceramics from the hydrothermal method have higher density, grain size, dielectric constant, Kp, and lower D and Qm. The hydrothermal powders are much more sinterable than powders produced by the solid-state reaction method.","PeriodicalId":20488,"journal":{"name":"Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics","volume":"1 1","pages":"115-117"},"PeriodicalIF":0.0,"publicationDate":"1994-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83894077","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-08-07DOI: 10.1109/ISAF.1994.522374
Yanxia Lu, D. Hoelzer, W. Schulze, B. Tuttle, B. Potter
Bismuth titanate (Bi/sub 4/Ti/sub 3/O/sub 12/) thin films were fabricated by spin coat deposition-rapid thermal processing (RTP) technique. Acetate derived solution for deposition was synthesized by blending dissolved bismuth acetate in aqueous acetic acid, and then adding with titanium acetate. A series of electrically insulating, semiconducting and conducting substrates were evaluated for Bi/sub 4/Ti/sub 3/O/sub 12/ films deposition. While X-ray diffraction and TEM analyses indicated that the initial perovskite crystallization temperature was 500/spl deg/C or less for these Bi/sub 4/Ti/sub 3/O/sub 12/ films, a 700/spl deg/C crystallization treatment was used to obtain single phase perovskite films. Bi/sub 4/Ti/sub 3/O/sub 12/ film crystallographic orientation was shown to depend on three factors: substrate, the number of coating layers and thermal processing. While preferred c-direction orientation was observed for films deposited on silver foil substrates, preferred a-direction orientation was obtained for films deposited on both Si and Pt coated Si wafers. The films were dense, smooth, crack-free and had grain sizes ranging from 20 nm to 400 nm. Film thickness and refractive index were determined using a combination of ellipsometry, waveguide refractometry and TEM measurements. Both low field dielectric and ferroelectric properties were measured for an 800 nm thick film deposited on a Pt coated MgO substrate. A remanent polarization of 38 /spl mu/C/cm/sup 2/ and a coercive field of 98 kv/cm was measured for this film that was crystallized at 700/spl deg/C.
{"title":"Ferroelectric thin film bismuth titanate prepared from acetate precursor","authors":"Yanxia Lu, D. Hoelzer, W. Schulze, B. Tuttle, B. Potter","doi":"10.1109/ISAF.1994.522374","DOIUrl":"https://doi.org/10.1109/ISAF.1994.522374","url":null,"abstract":"Bismuth titanate (Bi/sub 4/Ti/sub 3/O/sub 12/) thin films were fabricated by spin coat deposition-rapid thermal processing (RTP) technique. Acetate derived solution for deposition was synthesized by blending dissolved bismuth acetate in aqueous acetic acid, and then adding with titanium acetate. A series of electrically insulating, semiconducting and conducting substrates were evaluated for Bi/sub 4/Ti/sub 3/O/sub 12/ films deposition. While X-ray diffraction and TEM analyses indicated that the initial perovskite crystallization temperature was 500/spl deg/C or less for these Bi/sub 4/Ti/sub 3/O/sub 12/ films, a 700/spl deg/C crystallization treatment was used to obtain single phase perovskite films. Bi/sub 4/Ti/sub 3/O/sub 12/ film crystallographic orientation was shown to depend on three factors: substrate, the number of coating layers and thermal processing. While preferred c-direction orientation was observed for films deposited on silver foil substrates, preferred a-direction orientation was obtained for films deposited on both Si and Pt coated Si wafers. The films were dense, smooth, crack-free and had grain sizes ranging from 20 nm to 400 nm. Film thickness and refractive index were determined using a combination of ellipsometry, waveguide refractometry and TEM measurements. Both low field dielectric and ferroelectric properties were measured for an 800 nm thick film deposited on a Pt coated MgO substrate. A remanent polarization of 38 /spl mu/C/cm/sup 2/ and a coercive field of 98 kv/cm was measured for this film that was crystallized at 700/spl deg/C.","PeriodicalId":20488,"journal":{"name":"Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics","volume":"78 1","pages":"348-351"},"PeriodicalIF":0.0,"publicationDate":"1994-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87071863","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-08-07DOI: 10.1109/ISAF.1994.522473
J. S. Capurso, W. Schulze
Positive temperature coefficient of resistance (PTCR) barium titanate is used as the base material for a ceramic sensor which employs piezoresistivity to detect changes in applied stress. Tape-cast sheets of undoped (insulating) and PTCR (semiconducting) BaTiO/sub 3/ are laminated to produce a three-layer "trilaminate"-a sintered structure which has two PTCR layers separated by an insulating layer. The trilaminate is exposed to mechanical stress in a four-point bend configuration (placing one semiconducting layer completely in tension, the other in compression), and the resistivities for both stress states are measured concurrently as functions of the applied stress magnitude. The piezoresistivity coefficient (/spl pi/) is calculated from the slope of the linear resistivity-stress response. Piezoresistivity results are presented versus PTCR layer composition (counterdopant species) and furnace cooling conditions (grain boundary oxidation level). These results are interpreted with respect to Heywang's model of the gain boundary potential barrier.
{"title":"A stress-sensing ceramic device based on PTCR barium titanate","authors":"J. S. Capurso, W. Schulze","doi":"10.1109/ISAF.1994.522473","DOIUrl":"https://doi.org/10.1109/ISAF.1994.522473","url":null,"abstract":"Positive temperature coefficient of resistance (PTCR) barium titanate is used as the base material for a ceramic sensor which employs piezoresistivity to detect changes in applied stress. Tape-cast sheets of undoped (insulating) and PTCR (semiconducting) BaTiO/sub 3/ are laminated to produce a three-layer \"trilaminate\"-a sintered structure which has two PTCR layers separated by an insulating layer. The trilaminate is exposed to mechanical stress in a four-point bend configuration (placing one semiconducting layer completely in tension, the other in compression), and the resistivities for both stress states are measured concurrently as functions of the applied stress magnitude. The piezoresistivity coefficient (/spl pi/) is calculated from the slope of the linear resistivity-stress response. Piezoresistivity results are presented versus PTCR layer composition (counterdopant species) and furnace cooling conditions (grain boundary oxidation level). These results are interpreted with respect to Heywang's model of the gain boundary potential barrier.","PeriodicalId":20488,"journal":{"name":"Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics","volume":"14 1","pages":"731-734"},"PeriodicalIF":0.0,"publicationDate":"1994-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82154297","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-08-07DOI: 10.1109/ISAF.1994.522493
A. Chow, D. J. Lichrenwalner, T. Graettinger, J. R. Busch, Orlando Auciello, A. Kingon
A potassium niobate thin film waveguide is an ideal candidate for producing a compact blue laser source by second harmonic generation. However, good epitaxial quality films are difficult to produce and high optical losses are a continuing problem. A report is presented in this paper on the investigations of the microstructural and optical properties of KNbO/sub 3/ thin films to better understand the origin of optical waveguide losses. Epitaxial, dense KNbO/sub 3/ thin films have been grown on MgO, MgAl/sub 2/O/sub 4/, and KTaO/sub 3/ substrates by ion-beam sputter deposition. X-ray diffraction, rocking curves, Rutherford backscattering spectroscopy, ion-channelling, field emission scanning electron microscopy, and atomic force microscopy were used to analyze the orientation, epitaxial quality, grain size, and surface roughness of the films. Optical properties including refractive index and optical scattering losses have been characterized by prism-coupling and an optical fiber loss measurement method. The dominant loss mechanism in these film waveguides is discussed. Green light by second harmonic generation has been produced in the transverse and waveguide modes in KNbO/sub 3/ films.
{"title":"Microstructural and optical properties of potassium niobate thin films","authors":"A. Chow, D. J. Lichrenwalner, T. Graettinger, J. R. Busch, Orlando Auciello, A. Kingon","doi":"10.1109/ISAF.1994.522493","DOIUrl":"https://doi.org/10.1109/ISAF.1994.522493","url":null,"abstract":"A potassium niobate thin film waveguide is an ideal candidate for producing a compact blue laser source by second harmonic generation. However, good epitaxial quality films are difficult to produce and high optical losses are a continuing problem. A report is presented in this paper on the investigations of the microstructural and optical properties of KNbO/sub 3/ thin films to better understand the origin of optical waveguide losses. Epitaxial, dense KNbO/sub 3/ thin films have been grown on MgO, MgAl/sub 2/O/sub 4/, and KTaO/sub 3/ substrates by ion-beam sputter deposition. X-ray diffraction, rocking curves, Rutherford backscattering spectroscopy, ion-channelling, field emission scanning electron microscopy, and atomic force microscopy were used to analyze the orientation, epitaxial quality, grain size, and surface roughness of the films. Optical properties including refractive index and optical scattering losses have been characterized by prism-coupling and an optical fiber loss measurement method. The dominant loss mechanism in these film waveguides is discussed. Green light by second harmonic generation has been produced in the transverse and waveguide modes in KNbO/sub 3/ films.","PeriodicalId":20488,"journal":{"name":"Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics","volume":"34 1","pages":"794-796"},"PeriodicalIF":0.0,"publicationDate":"1994-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82282790","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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