V. P. Gordeev, V. A. Oleshchenko, V. V. Bezotosnyi
Comparative results are presented of 3D-calculation for thermoelastic stress (TES) profiles in diode laser arrays (LDAs) assembled on CuW and AlN submounts (temperature compensators) and operating at a continuous-wave (CW) thermal power load of up to 220 W. For the first time, the simulation has revealed substantial differences in the maximal TES values for the arrays assembled on CuW and AlN submounts, as well as pronounced features of TES distribution in LDA assemblies, in particular, near the rear (highly reflecting) mirror of the laser diode cavity in similar geometries of temperature compensators. Results of the numerical simulation qualitatively agree with thorough measurements of spectral distributions over the LDA emitting aperture. The obtained results are interesting for mastering the production technologies of high-power devices aimed at improving their output parameters and service life.
{"title":"Thermoelastic stresses in high-power CW diode laser arrays assembled on CuW and AlN submounts","authors":"V. P. Gordeev, V. A. Oleshchenko, V. V. Bezotosnyi","doi":"10.1070/qel18040","DOIUrl":"https://doi.org/10.1070/qel18040","url":null,"abstract":"Comparative results are presented of 3D-calculation for thermoelastic stress (TES) profiles in diode laser arrays (LDAs) assembled on CuW and AlN submounts (temperature compensators) and operating at a continuous-wave (CW) thermal power load of up to 220 W. For the first time, the simulation has revealed substantial differences in the maximal TES values for the arrays assembled on CuW and AlN submounts, as well as pronounced features of TES distribution in LDA assemblies, in particular, near the rear (highly reflecting) mirror of the laser diode cavity in similar geometries of temperature compensators. Results of the numerical simulation qualitatively agree with thorough measurements of spectral distributions over the LDA emitting aperture. The obtained results are interesting for mastering the production technologies of high-power devices aimed at improving their output parameters and service life.","PeriodicalId":20775,"journal":{"name":"Quantum Electronics","volume":null,"pages":null},"PeriodicalIF":0.9,"publicationDate":"2022-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79053072","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
We consider an ordered array of semiconductor single-electron quantum dots located in the antinode of a mode of a microcavity based on a two-dimensional photonic crystal. The influence of Coulomb effects on the energy exchange between quantum dots and the mode is studied in arrays for different numbers of dots. The stability of resonant electron – photon dynamics is analysed as a function of technological deviations of the dot parameters caused by the imperfection of the manufacturing procedure. Using the data of numerical simulation of the spectroscopic response of the system, criteria are formulated for using such a structure as a detector of localised charges. The parameters of the photonic crystal are chosen, which make it possible to implement the proposed measurement scheme.
{"title":"Interaction of an array of single-electron quantum dots with a microcavity field with allowance for Coulomb correlations","authors":"A. V. Tsukanov, I. Kateev","doi":"10.1070/QEL18046","DOIUrl":"https://doi.org/10.1070/QEL18046","url":null,"abstract":"We consider an ordered array of semiconductor single-electron quantum dots located in the antinode of a mode of a microcavity based on a two-dimensional photonic crystal. The influence of Coulomb effects on the energy exchange between quantum dots and the mode is studied in arrays for different numbers of dots. The stability of resonant electron – photon dynamics is analysed as a function of technological deviations of the dot parameters caused by the imperfection of the manufacturing procedure. Using the data of numerical simulation of the spectroscopic response of the system, criteria are formulated for using such a structure as a detector of localised charges. The parameters of the photonic crystal are chosen, which make it possible to implement the proposed measurement scheme.","PeriodicalId":20775,"journal":{"name":"Quantum Electronics","volume":null,"pages":null},"PeriodicalIF":0.9,"publicationDate":"2022-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73105976","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
We theoretically study a new method for generating laser radiation by a two-level system without population inversion in the ‘red’ wing of its spectral line under resonant absorption of broadband radiation from pump laser diodes. A two-level system simulates the atoms of an active gas in an atmosphere of a high-pressure buffer gas. The effect results from the fact that in the ‘red’ wing of the spectral line, the probability of stimulated emission exceeds the probability of absorption if the homogeneous broadening due to the interaction of particles with the buffer gas significantly exceeds the natural one (at high pressures of the buffer gas). Analytical formulae are obtained that describe the operation of a two-level gas laser with transverse diode pumping. It is found that the longer the active medium, the higher the buffer gas pressure and pump radiation intensity, and the smaller the width of the pump radiation spectrum, the greater the efficiency of conversion of pump radiation into laser radiation. In a sufficiently long active medium (the length of the medium is 50 times its width), the conversion efficiency can reach 44 % at a buffer gas pressure of 5 atm, a pump diode radiation intensity of 3 kW cm−2, and a half-width of its spectrum of 1 cm−1. A two-level gas laser with transverse diode pumping is capable of generating continuous optical radiation with a very high (up to 100 kW) power. The frequency of laser radiation can be tuned by several tens of cm−1.
{"title":"Two-level gas laser with transverse diode pumping","authors":"A. Parkhomenko, A. Shalagin","doi":"10.1070/QEL18038","DOIUrl":"https://doi.org/10.1070/QEL18038","url":null,"abstract":"We theoretically study a new method for generating laser radiation by a two-level system without population inversion in the ‘red’ wing of its spectral line under resonant absorption of broadband radiation from pump laser diodes. A two-level system simulates the atoms of an active gas in an atmosphere of a high-pressure buffer gas. The effect results from the fact that in the ‘red’ wing of the spectral line, the probability of stimulated emission exceeds the probability of absorption if the homogeneous broadening due to the interaction of particles with the buffer gas significantly exceeds the natural one (at high pressures of the buffer gas). Analytical formulae are obtained that describe the operation of a two-level gas laser with transverse diode pumping. It is found that the longer the active medium, the higher the buffer gas pressure and pump radiation intensity, and the smaller the width of the pump radiation spectrum, the greater the efficiency of conversion of pump radiation into laser radiation. In a sufficiently long active medium (the length of the medium is 50 times its width), the conversion efficiency can reach 44 % at a buffer gas pressure of 5 atm, a pump diode radiation intensity of 3 kW cm−2, and a half-width of its spectrum of 1 cm−1. A two-level gas laser with transverse diode pumping is capable of generating continuous optical radiation with a very high (up to 100 kW) power. The frequency of laser radiation can be tuned by several tens of cm−1.","PeriodicalId":20775,"journal":{"name":"Quantum Electronics","volume":null,"pages":null},"PeriodicalIF":0.9,"publicationDate":"2022-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85032915","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
I. Baranova, T. Dolgova, I. Kolmychek, A. Maydykovskiy, E. Mishina, T. Murzina, A. A. Fedyanin
We report some results of studying optical second-harmonic generation (SHG) on surfaces and at interfaces of centrosymmetric media, in resonant nano- and microstructures, and in ferroelectric materials. The research was carried out at the Department of Quantum Electronics of the Lomonosov Moscow State University under the supervision of Professor O.A. Aktsipetrov, and subsequently developed by his disciples. As examples that clearly demonstrate the possibilities of the SHG method for examining nonstandard objects of nonlinear optics, we discuss the behaviour of the nonlinear optical response of single-crystal silicon and germanium surfaces and their interfaces with oxides, as well as nonlinear electroreflection. Optical interferometry and its possibilities are briefly described using the example of these systems. Unique sensitivity of SHG to the symmetry and resonance properties of nanostructures, including magnetic ones, is shown, which determines the efficiency of this method for investigating such systems. Finally, we demonstrate that the SHG effect is a unique remote and sensitive method for studying ferroelectric structures.
{"title":"Optical second harmonic generation: role of symmetry and local resonances (review)","authors":"I. Baranova, T. Dolgova, I. Kolmychek, A. Maydykovskiy, E. Mishina, T. Murzina, A. A. Fedyanin","doi":"10.1070/qel18037","DOIUrl":"https://doi.org/10.1070/qel18037","url":null,"abstract":"We report some results of studying optical second-harmonic generation (SHG) on surfaces and at interfaces of centrosymmetric media, in resonant nano- and microstructures, and in ferroelectric materials. The research was carried out at the Department of Quantum Electronics of the Lomonosov Moscow State University under the supervision of Professor O.A. Aktsipetrov, and subsequently developed by his disciples. As examples that clearly demonstrate the possibilities of the SHG method for examining nonstandard objects of nonlinear optics, we discuss the behaviour of the nonlinear optical response of single-crystal silicon and germanium surfaces and their interfaces with oxides, as well as nonlinear electroreflection. Optical interferometry and its possibilities are briefly described using the example of these systems. Unique sensitivity of SHG to the symmetry and resonance properties of nanostructures, including magnetic ones, is shown, which determines the efficiency of this method for investigating such systems. Finally, we demonstrate that the SHG effect is a unique remote and sensitive method for studying ferroelectric structures.","PeriodicalId":20775,"journal":{"name":"Quantum Electronics","volume":null,"pages":null},"PeriodicalIF":0.9,"publicationDate":"2022-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83991837","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
E. Lipatov, D. E. Genin, M. Shulepov, E. N. Tel’minov, A. Savvin, A. Eliseev, V. Vins
Superluminescence of NV centres with a band peaking at λ = 718 nm in the phonon wing of the photoluminescence spectrum of a high-pressure high-temperature (HPHT) diamond sample under pulsed optical excitation at λ = 532 nm with an intensity of 2 – 46 MW cm−2 is demonstrated. Superluminescence is observed in the diamond crystal region containing 6 ppm NV centres and 150 ppm substituent nitrogen; it is absent in the crystal part with a lower nitrogen content. Superluminescence pulses are observed on the leading edge of the optical excitation pulse at λ = 532 nm and have an FWHM value of 4 ns. The enhancement of the photoluminescence of NV centres is suggested to be due to the total internal reflection in the diamond plate (waveguide effect).
{"title":"Superluminescence in the phonon wing of the photoluminescence spectrum of NV centres in diamond optically pumped at λ = 532 nm","authors":"E. Lipatov, D. E. Genin, M. Shulepov, E. N. Tel’minov, A. Savvin, A. Eliseev, V. Vins","doi":"10.1070/qel18044","DOIUrl":"https://doi.org/10.1070/qel18044","url":null,"abstract":"Superluminescence of NV centres with a band peaking at λ = 718 nm in the phonon wing of the photoluminescence spectrum of a high-pressure high-temperature (HPHT) diamond sample under pulsed optical excitation at λ = 532 nm with an intensity of 2 – 46 MW cm−2 is demonstrated. Superluminescence is observed in the diamond crystal region containing 6 ppm NV centres and 150 ppm substituent nitrogen; it is absent in the crystal part with a lower nitrogen content. Superluminescence pulses are observed on the leading edge of the optical excitation pulse at λ = 532 nm and have an FWHM value of 4 ns. The enhancement of the photoluminescence of NV centres is suggested to be due to the total internal reflection in the diamond plate (waveguide effect).","PeriodicalId":20775,"journal":{"name":"Quantum Electronics","volume":null,"pages":null},"PeriodicalIF":0.9,"publicationDate":"2022-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75712349","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The optical scheme of a flat-field stigmatic X-ray spectrograph, which includes a grazing-incidence focusing mirror and a concave fan-type diffraction grating crossed with respect to the mirror and mounted in a conical diffraction scheme, is calculated analytically. Spectral images of a point monochromatic source are obtained by numerical ray tracing, confirming the high quality of spectral images at a level of 1 × 4 μm. It is assumed that the use of small grazing incidence angles in combination with the application of multilayer reflective coatings, including aperiodic ones, will make it possible to extend the working spectral range of the stigmatic spectrograph to the region of the ‘tender’ (ℏω ≈ 1.5 – 6 keV) X-ray range.
{"title":"The concept of a stigmatic flat-field X-ray spectrograph based on conical diffraction","authors":"A. O. Kolesnikov, E. Ragozin, A. Shatokhin","doi":"10.1070/QEL18048","DOIUrl":"https://doi.org/10.1070/QEL18048","url":null,"abstract":"The optical scheme of a flat-field stigmatic X-ray spectrograph, which includes a grazing-incidence focusing mirror and a concave fan-type diffraction grating crossed with respect to the mirror and mounted in a conical diffraction scheme, is calculated analytically. Spectral images of a point monochromatic source are obtained by numerical ray tracing, confirming the high quality of spectral images at a level of 1 × 4 μm. It is assumed that the use of small grazing incidence angles in combination with the application of multilayer reflective coatings, including aperiodic ones, will make it possible to extend the working spectral range of the stigmatic spectrograph to the region of the ‘tender’ (ℏω ≈ 1.5 – 6 keV) X-ray range.","PeriodicalId":20775,"journal":{"name":"Quantum Electronics","volume":null,"pages":null},"PeriodicalIF":0.9,"publicationDate":"2022-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77967000","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A. Machikhin, M. Sharikova, A. Lyashenko, A. Kozlov, V. Pozhar, V. Lomonov, E. Stoĭkova
A method for controlling precisely the intensities of several spectral components of radiation generated by a multiwavelength laser system is described. The method is based on the use of simultaneous Bragg diffraction by a set of acoustic waves of corresponding frequencies and adjustment of their amplitudes. The efficiency of the proposed method is demonstrated by the example of a multiwavelength system based on a pulsed Nd:YAG laser (1064 nm) with intracavity parametric generation of a signal wave (1572 nm) and extracavity light conversion into higher harmonics and sum frequencies. An independent control of intensity ratio for four spectral components in the visible range (452, 532, 635, and 786 nm) is obtained by precisely controlled attenuation of acoustic-wave amplitudes using an original 4-channel acousto-optical polychromator.
{"title":"Attenuation of the intensities of spectral components of a multiwavelength pulsed laser system by means of the Bragg diffraction of radiation by several acoustic waves","authors":"A. Machikhin, M. Sharikova, A. Lyashenko, A. Kozlov, V. Pozhar, V. Lomonov, E. Stoĭkova","doi":"10.1070/qel18042","DOIUrl":"https://doi.org/10.1070/qel18042","url":null,"abstract":"A method for controlling precisely the intensities of several spectral components of radiation generated by a multiwavelength laser system is described. The method is based on the use of simultaneous Bragg diffraction by a set of acoustic waves of corresponding frequencies and adjustment of their amplitudes. The efficiency of the proposed method is demonstrated by the example of a multiwavelength system based on a pulsed Nd:YAG laser (1064 nm) with intracavity parametric generation of a signal wave (1572 nm) and extracavity light conversion into higher harmonics and sum frequencies. An independent control of intensity ratio for four spectral components in the visible range (452, 532, 635, and 786 nm) is obtained by precisely controlled attenuation of acoustic-wave amplitudes using an original 4-channel acousto-optical polychromator.","PeriodicalId":20775,"journal":{"name":"Quantum Electronics","volume":null,"pages":null},"PeriodicalIF":0.9,"publicationDate":"2022-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82308768","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A. S. Abramov, I. Zolotovskii, D. Korobko, V. Kamynin, V. Ribenek, A. Fotiadi, V. S. Tsarev
This paper examines the generation of high-frequency picosecond pulse trains as a result of modulation instability of wave packets with a large phase modulation depth and small amplitude modulation depth. We demonstrate that intermediate amplification of such wave packets and subsequent phase-to-amplitude modulation conversion lead to the formation of pulses with peak powers orders of magnitude higher than their initial power. The corresponding pulse generators can be used to generate a line spectrum.
{"title":"Generation and dynamics of wave packets with a large phase modulation depth","authors":"A. S. Abramov, I. Zolotovskii, D. Korobko, V. Kamynin, V. Ribenek, A. Fotiadi, V. S. Tsarev","doi":"10.1070/qel18043","DOIUrl":"https://doi.org/10.1070/qel18043","url":null,"abstract":"This paper examines the generation of high-frequency picosecond pulse trains as a result of modulation instability of wave packets with a large phase modulation depth and small amplitude modulation depth. We demonstrate that intermediate amplification of such wave packets and subsequent phase-to-amplitude modulation conversion lead to the formation of pulses with peak powers orders of magnitude higher than their initial power. The corresponding pulse generators can be used to generate a line spectrum.","PeriodicalId":20775,"journal":{"name":"Quantum Electronics","volume":null,"pages":null},"PeriodicalIF":0.9,"publicationDate":"2022-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79771893","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
S. Slipchenko, D. Romanovich, V. Kapitonov, K. Bakhvalov, N. Pikhtin, P. Kop’ev
High-power quasi-cw semiconductor lasers with an emitting aperture 800 μm wide and a continuous p-contact are developed. Laser operation with a pulse duration of 1 ms, a repetition rate of 10 Hz, and a maximum peak power of 87 W at a wavelength 1060 – 1070 nm is demonstrated under pumping by current pulses with am amplitude of 97 A. Experimental estimates show that overheating of the active region at the end of the laser pulse at a current of 97 A may reach 36.7 °C.
{"title":"High-power quasi-cw semiconductor lasers (1060 nm) with an ultra-wide emitting aperture","authors":"S. Slipchenko, D. Romanovich, V. Kapitonov, K. Bakhvalov, N. Pikhtin, P. Kop’ev","doi":"10.1070/qel18014","DOIUrl":"https://doi.org/10.1070/qel18014","url":null,"abstract":"High-power quasi-cw semiconductor lasers with an emitting aperture 800 μm wide and a continuous p-contact are developed. Laser operation with a pulse duration of 1 ms, a repetition rate of 10 Hz, and a maximum peak power of 87 W at a wavelength 1060 – 1070 nm is demonstrated under pumping by current pulses with am amplitude of 97 A. Experimental estimates show that overheating of the active region at the end of the laser pulse at a current of 97 A may reach 36.7 °C.","PeriodicalId":20775,"journal":{"name":"Quantum Electronics","volume":null,"pages":null},"PeriodicalIF":0.9,"publicationDate":"2022-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77182936","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
An optically pumped semiconductor laser based on a CdS/ZnSe heterostructure containing 10 coupled quantum wells is studied. The structure is grown by metalorganic vapour phase epitaxy on a GaAs substrate. A microcavity with interference dielectric mirrors is fabricated based on this structure. At room temperature under longitudinal pumping by an InGaN/GaN pulsed laser diode with a wavelength of 438 nm, the peak power of the microcavity reaches 100 mW at a wavelength of 508 nm and a pulse duration of 65 ns.
{"title":"Semiconductor laser based on a CdS/ZnSe heterostructure with longitudinal optical pumping by a laser diode","authors":"M. Butaev, V. Kozlovsky, Y. Skasyrsky","doi":"10.1070/qel18016","DOIUrl":"https://doi.org/10.1070/qel18016","url":null,"abstract":"An optically pumped semiconductor laser based on a CdS/ZnSe heterostructure containing 10 coupled quantum wells is studied. The structure is grown by metalorganic vapour phase epitaxy on a GaAs substrate. A microcavity with interference dielectric mirrors is fabricated based on this structure. At room temperature under longitudinal pumping by an InGaN/GaN pulsed laser diode with a wavelength of 438 nm, the peak power of the microcavity reaches 100 mW at a wavelength of 508 nm and a pulse duration of 65 ns.","PeriodicalId":20775,"journal":{"name":"Quantum Electronics","volume":null,"pages":null},"PeriodicalIF":0.9,"publicationDate":"2022-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73329037","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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