Pub Date : 1900-01-01DOI: 10.1109/IEDM.1977.189328
P.W. von Basse, D.G. Edwards, D. Essl, R. Hofmann, R. Losehand
A VMOS RAM, implemented without planar transistors requires only 6 mask steps instead of 7 and offers more options in process optimization, for example in the selection of the doping concentrations.
{"title":"Realization of a 65K dynamic RAM device making exclusive use of VMOS transistors","authors":"P.W. von Basse, D.G. Edwards, D. Essl, R. Hofmann, R. Losehand","doi":"10.1109/IEDM.1977.189328","DOIUrl":"https://doi.org/10.1109/IEDM.1977.189328","url":null,"abstract":"A VMOS RAM, implemented without planar transistors requires only 6 mask steps instead of 7 and offers more options in process optimization, for example in the selection of the doping concentrations.","PeriodicalId":218912,"journal":{"name":"1977 International Electron Devices Meeting","volume":"192 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116868286","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/IEDM.1977.189203
M. Helix, K. Vaidyanathan, B. Streetman, P. Chatterjee
The fabrication of planar p-n junctions in GaAs by Be ion implantation is described and the properties of these junctions are compared with Zn-implanted and Zn-diffused diodes. The Be-implanted diodes exhibit good forward characteristics, very low reverse leakage current, and high breakdown voltage. It appears that lateral diffusion is negligible in this fabrication method, suggesting that such junctions may be used in GaAs integrated circuit applications.
{"title":"Planar GaAs p-n junctions by Be ion implantation","authors":"M. Helix, K. Vaidyanathan, B. Streetman, P. Chatterjee","doi":"10.1109/IEDM.1977.189203","DOIUrl":"https://doi.org/10.1109/IEDM.1977.189203","url":null,"abstract":"The fabrication of planar p-n junctions in GaAs by Be ion implantation is described and the properties of these junctions are compared with Zn-implanted and Zn-diffused diodes. The Be-implanted diodes exhibit good forward characteristics, very low reverse leakage current, and high breakdown voltage. It appears that lateral diffusion is negligible in this fabrication method, suggesting that such junctions may be used in GaAs integrated circuit applications.","PeriodicalId":218912,"journal":{"name":"1977 International Electron Devices Meeting","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117045847","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/IEDM.1977.189239
H. Fukui, M. Naito, Y. Terasawa
The dynamic behavior of a thyristor is numerically analyzed by solving a one-dimensional Poisson's equation and one-dimensional time-dependent continuity equations. The calculated results of the gate turn-on, dv/dt triggering and reverse recovery characteristics are compared with the experimental results. The advantage of this one-dimensional analysis method is that the dynamic characteristics of a thyristor with an arbitrary shorted emitter resistance and an arbitrary impurity profile can be analyzed.
{"title":"One-dimensional analysis of dynamic behavior of a thyristor","authors":"H. Fukui, M. Naito, Y. Terasawa","doi":"10.1109/IEDM.1977.189239","DOIUrl":"https://doi.org/10.1109/IEDM.1977.189239","url":null,"abstract":"The dynamic behavior of a thyristor is numerically analyzed by solving a one-dimensional Poisson's equation and one-dimensional time-dependent continuity equations. The calculated results of the gate turn-on, dv/dt triggering and reverse recovery characteristics are compared with the experimental results. The advantage of this one-dimensional analysis method is that the dynamic characteristics of a thyristor with an arbitrary shorted emitter resistance and an arbitrary impurity profile can be analyzed.","PeriodicalId":218912,"journal":{"name":"1977 International Electron Devices Meeting","volume":"145 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122571908","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/IEDM.1977.189326
J. Copeland, A. Dentai, T. Lee
Light-emitting diodes with the high-radiance Burrus configuration have been made with an internal PNPN structure which causes an S-type negative resistance. The devices were double heterostructures using InGaAsP material. By using the proper external load impedance and bias voltage, the negative resistance can be used to obtain bistable operation with switching from low current to high current triggered by a small current (e.g. 1 µA). Light coupled into the center junction can be used as the source of Signal current. Triggering has been achieved with a 3 µW light pulse.
{"title":"Optically-switched PNPN light-emitting diodes","authors":"J. Copeland, A. Dentai, T. Lee","doi":"10.1109/IEDM.1977.189326","DOIUrl":"https://doi.org/10.1109/IEDM.1977.189326","url":null,"abstract":"Light-emitting diodes with the high-radiance Burrus configuration have been made with an internal PNPN structure which causes an S-type negative resistance. The devices were double heterostructures using InGaAsP material. By using the proper external load impedance and bias voltage, the negative resistance can be used to obtain bistable operation with switching from low current to high current triggered by a small current (e.g. 1 µA). Light coupled into the center junction can be used as the source of Signal current. Triggering has been achieved with a 3 µW light pulse.","PeriodicalId":218912,"journal":{"name":"1977 International Electron Devices Meeting","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122635687","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/IEDM.1977.189211
J. Zook, R. Maciolek, J. D. Heaps
Inexpensive ceramic substrates can be coated from the melt with a thin layer of large grain polycrystalline silicon to produce low cost solar cells. The properties are quite similar to those of EFG ribbons. A focussed light beam from a monochromator was used to evaluate cell uniformity and to measure minority carrier diffusion length within grains. Cells with active areas of 1cm2and without AR coatings currently have AM1 conversion efficiencies over 7% and inherent efficiencies over 12%.
{"title":"Silicon-on-ceramic for low cost solar cells","authors":"J. Zook, R. Maciolek, J. D. Heaps","doi":"10.1109/IEDM.1977.189211","DOIUrl":"https://doi.org/10.1109/IEDM.1977.189211","url":null,"abstract":"Inexpensive ceramic substrates can be coated from the melt with a thin layer of large grain polycrystalline silicon to produce low cost solar cells. The properties are quite similar to those of EFG ribbons. A focussed light beam from a monochromator was used to evaluate cell uniformity and to measure minority carrier diffusion length within grains. Cells with active areas of 1cm2and without AR coatings currently have AM1 conversion efficiencies over 7% and inherent efficiencies over 12%.","PeriodicalId":218912,"journal":{"name":"1977 International Electron Devices Meeting","volume":"147 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122934489","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/IEDM.1977.189312
E. Snow
{"title":"Current status of self scanning photodiode array technology","authors":"E. Snow","doi":"10.1109/IEDM.1977.189312","DOIUrl":"https://doi.org/10.1109/IEDM.1977.189312","url":null,"abstract":"","PeriodicalId":218912,"journal":{"name":"1977 International Electron Devices Meeting","volume":"144 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123286320","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/IEDM.1977.189221
P. Fischer
The performance of cold-cathode distributed emission crossed-field amplifiers (CFA) used in high power radar systems is degraded because of problems with starting delay, power dips, circuit dissipation and low efficiency. A theoretical analysis has been performed at ECOM which explains the reasons for these difficulties. The key lies in the gross features of the CFA space-charge flow which is completely specifled by two time-independent parameters, the average secondary emission coefficient of the cathode, and the average electron back-bombardment energy. The parameters characterize the emission capability of the cathode and are a function of CFA interaction space geometry, operating conditions and cathode material. The theoretical analysis has been programmed for a digital computer to provide a design and evaluation tool to improve CFA performance.
{"title":"Space-charge flow starting conditions in RF-keyed crossed-field amplifiers","authors":"P. Fischer","doi":"10.1109/IEDM.1977.189221","DOIUrl":"https://doi.org/10.1109/IEDM.1977.189221","url":null,"abstract":"The performance of cold-cathode distributed emission crossed-field amplifiers (CFA) used in high power radar systems is degraded because of problems with starting delay, power dips, circuit dissipation and low efficiency. A theoretical analysis has been performed at ECOM which explains the reasons for these difficulties. The key lies in the gross features of the CFA space-charge flow which is completely specifled by two time-independent parameters, the average secondary emission coefficient of the cathode, and the average electron back-bombardment energy. The parameters characterize the emission capability of the cathode and are a function of CFA interaction space geometry, operating conditions and cathode material. The theoretical analysis has been programmed for a digital computer to provide a design and evaluation tool to improve CFA performance.","PeriodicalId":218912,"journal":{"name":"1977 International Electron Devices Meeting","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129805545","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/IEDM.1977.189164
A. Sobel
Recent display research will be reviewed and related to displays which are available commercially. For many devices, the focus of current work is on materials. New liquid-crystal formulations offer lower-voltage thresholds and thus wider viewing angles and higher contrast, both of which increase with voltage above threshold. New materials are making possible liquid-crystal-and-dye devices with potentially better performance than twisted-nematic liquid crystals. In electrochromic devices, much effort is going into understanding the failure mechanisms. Further improvement in life and lower-voltage operation have been reported for low-voltage DC electroluminescent phosphors. Some new forms of gas-discharge devices have been described. The introduction of memory to positive-column displays should eventually improve both luminance and efficiency. So far, only increased luminance has been attained; the, duty factor and resulting lower peak luminance has not yet been translated into higher efficiency. For many displays, the drive electronics is substantially more expensive than the display device itself, so there is incentive to reduce the cost of the drive circuitry. Much of this work involves conventional semiconductor technology: new circuitry, less-expensive packaging, and lower-cost interconnections. Reducing the requirements on the drive circuitry by modifying the device characteristics can also lower circuit costs.
{"title":"Current display research—A survey","authors":"A. Sobel","doi":"10.1109/IEDM.1977.189164","DOIUrl":"https://doi.org/10.1109/IEDM.1977.189164","url":null,"abstract":"Recent display research will be reviewed and related to displays which are available commercially. For many devices, the focus of current work is on materials. New liquid-crystal formulations offer lower-voltage thresholds and thus wider viewing angles and higher contrast, both of which increase with voltage above threshold. New materials are making possible liquid-crystal-and-dye devices with potentially better performance than twisted-nematic liquid crystals. In electrochromic devices, much effort is going into understanding the failure mechanisms. Further improvement in life and lower-voltage operation have been reported for low-voltage DC electroluminescent phosphors. Some new forms of gas-discharge devices have been described. The introduction of memory to positive-column displays should eventually improve both luminance and efficiency. So far, only increased luminance has been attained; the, duty factor and resulting lower peak luminance has not yet been translated into higher efficiency. For many displays, the drive electronics is substantially more expensive than the display device itself, so there is incentive to reduce the cost of the drive circuitry. Much of this work involves conventional semiconductor technology: new circuitry, less-expensive packaging, and lower-cost interconnections. Reducing the requirements on the drive circuitry by modifying the device characteristics can also lower circuit costs.","PeriodicalId":218912,"journal":{"name":"1977 International Electron Devices Meeting","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129908785","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/IEDM.1977.189317
H. Betz, K. Wiedeburg, H. Ryssel, H. Kranz
Planar n+p- and p+n-photodetectors have been made in InSb by implantation of sulfur and beryllium, n+p-detectors show a flat response from 4.5 to 5.3 µm, resulting from the Burstein-Moss effect, whereas the p+n-detectors show the usual behavior of the response with a shift in the cutoff-wavelength from 4.8 to 5.5 µm depending on the substrate doping. The obtained peak detectivities are 3 × 1011cmHz1/2W-1for sulfur implanted and 1012cmHz1/2W-1for beryllium implanted diodes at a field of view of 0°. The corresponding externalquantum efficiencies are 40 to 60% for all detectors.
{"title":"Ion implanted InSb photodetectors","authors":"H. Betz, K. Wiedeburg, H. Ryssel, H. Kranz","doi":"10.1109/IEDM.1977.189317","DOIUrl":"https://doi.org/10.1109/IEDM.1977.189317","url":null,"abstract":"Planar n<sup>+</sup>p- and p<sup>+</sup>n-photodetectors have been made in InSb by implantation of sulfur and beryllium, n<sup>+</sup>p-detectors show a flat response from 4.5 to 5.3 µm, resulting from the Burstein-Moss effect, whereas the p<sup>+</sup>n-detectors show the usual behavior of the response with a shift in the cutoff-wavelength from 4.8 to 5.5 µm depending on the substrate doping. The obtained peak detectivities are 3 × 10<sup>11</sup>cmHz<sup>1/2</sup>W<sup>-1</sup>for sulfur implanted and 10<sup>12</sup>cmHz<sup>1/2</sup>W<sup>-1</sup>for beryllium implanted diodes at a field of view of 0°. The corresponding externalquantum efficiencies are 40 to 60% for all detectors.","PeriodicalId":218912,"journal":{"name":"1977 International Electron Devices Meeting","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130125575","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/IEDM.1977.189254
L. Winslow
The phase velocity dispersion of a traveling wave tube circuit is a major design parameter of a wide band TWT. The phase velocity dispersion determines the degree of variation in the electron bunching process as a function of frequency and as a result determines the frequency dependence of the gain, the AM/PM, the linearity, the harmonic power and tolerance to beam voltage changes.
{"title":"Phase velocity dispersion shaping as a design parameter in traveling wave tubes","authors":"L. Winslow","doi":"10.1109/IEDM.1977.189254","DOIUrl":"https://doi.org/10.1109/IEDM.1977.189254","url":null,"abstract":"The phase velocity dispersion of a traveling wave tube circuit is a major design parameter of a wide band TWT. The phase velocity dispersion determines the degree of variation in the electron bunching process as a function of frequency and as a result determines the frequency dependence of the gain, the AM/PM, the linearity, the harmonic power and tolerance to beam voltage changes.","PeriodicalId":218912,"journal":{"name":"1977 International Electron Devices Meeting","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127513544","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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