Pub Date : 1900-01-01DOI: 10.1109/IEDM.1977.189316
A. Steckl, H. Elabd, T. Jakobus
The operation of p-n PbS-Si heterojunction devices at 200 K and 300 K is reported. The I-V and C-V characteristics are presented and compared to those of p-p heterojunctions. At 200 K and a wavelength of 2.7 µm, the open circuit detectivity and voltage responsivity achieved are D*λ(100 Hz, 1 Hz) = 4 × 109cm Hz1/2/W and RV, λ(100 Hz) = 4 × 103V/W. Under the same conditions but in short circuit, zero bias operation, the detector performance achieved is, D*λ(100 Hz, 1 Hz = 3.4 × 109cm Hz1/2/W and RI, λ, = 4.8 × 10-4A/W.
{"title":"PbS-Si anisotype heterojunction characteristics","authors":"A. Steckl, H. Elabd, T. Jakobus","doi":"10.1109/IEDM.1977.189316","DOIUrl":"https://doi.org/10.1109/IEDM.1977.189316","url":null,"abstract":"The operation of p-n PbS-Si heterojunction devices at 200 K and 300 K is reported. The I-V and C-V characteristics are presented and compared to those of p-p heterojunctions. At 200 K and a wavelength of 2.7 µm, the open circuit detectivity and voltage responsivity achieved are D<sup>*</sup><inf>λ</inf>(100 Hz, 1 Hz) = 4 × 10<sup>9</sup>cm Hz<sup>1/2</sup>/W and R<inf>V, λ</inf>(100 Hz) = 4 × 10<sup>3</sup>V/W. Under the same conditions but in short circuit, zero bias operation, the detector performance achieved is, D<sup>*</sup><inf>λ</inf>(100 Hz, 1 Hz = 3.4 × 10<sup>9</sup>cm Hz<sup>1/2</sup>/W and R<inf>I, λ</inf>, = 4.8 × 10<sup>-4</sup>A/W.","PeriodicalId":218912,"journal":{"name":"1977 International Electron Devices Meeting","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114342612","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/IEDM.1977.189185
D. J. Bates, R. Knight
For 20 years, Electron Bombarded Semiconductor, or EBS, devices have shown promise for power amplification and power control applications. Until recently, products were not available; however, commercially available devices now provide characteristics superior to competing semiconductors and vacuum tubes. For the EBS operating principle, two device configurations and present and projected performance characteristics are given. Also included are figures of merit for pulsed and CW amplifiers for use in comparing the EBS with other devices. The life cycle of the EBS, from its birth through its present early adolescence, has involved Considerable struggle. The marriage of two foreign technologies has resulted in an offspring which only now is justifying the support of its early advocates, thus, the EBS must be considered to be an emerging device. This should be remembered when comparisons are made to RF power transistors, which are mature devices with only small evolutionary performance improvements to be expected in the future.
{"title":"A perspective on electron bombarded semiconductor power devices","authors":"D. J. Bates, R. Knight","doi":"10.1109/IEDM.1977.189185","DOIUrl":"https://doi.org/10.1109/IEDM.1977.189185","url":null,"abstract":"For 20 years, Electron Bombarded Semiconductor, or EBS, devices have shown promise for power amplification and power control applications. Until recently, products were not available; however, commercially available devices now provide characteristics superior to competing semiconductors and vacuum tubes. For the EBS operating principle, two device configurations and present and projected performance characteristics are given. Also included are figures of merit for pulsed and CW amplifiers for use in comparing the EBS with other devices. The life cycle of the EBS, from its birth through its present early adolescence, has involved Considerable struggle. The marriage of two foreign technologies has resulted in an offspring which only now is justifying the support of its early advocates, thus, the EBS must be considered to be an emerging device. This should be remembered when comparisons are made to RF power transistors, which are mature devices with only small evolutionary performance improvements to be expected in the future.","PeriodicalId":218912,"journal":{"name":"1977 International Electron Devices Meeting","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114697094","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/IEDM.1977.189301
K. Ura, H. Fujioka, T. Hosokawa
The stroboscopic SEM is very usuful to observe the dynamic voltage contrast image of semiconductor devices at a certain phase of repeating cycles. It consists of the usual SEM and the pulse gate which is inserted between the electron gun and the first condenser lens. The effect which affects the pulse width in the picosecond region is avoided in the design of the pulse gate. The shortest half-width of pulse is 0.2 ps. The spot size at usual pulse operations (several ps - several ns) is smaller than 0.1 µm. Examples of the two-dimensional voltage contrast images are shown in cases of 1 GHz Gunn diode and of a Simple 8 MHz IC.
{"title":"Stroboscopic scanning electron microscope to observe two-dimensional and dynamic potential distribution of semiconductor devices","authors":"K. Ura, H. Fujioka, T. Hosokawa","doi":"10.1109/IEDM.1977.189301","DOIUrl":"https://doi.org/10.1109/IEDM.1977.189301","url":null,"abstract":"The stroboscopic SEM is very usuful to observe the dynamic voltage contrast image of semiconductor devices at a certain phase of repeating cycles. It consists of the usual SEM and the pulse gate which is inserted between the electron gun and the first condenser lens. The effect which affects the pulse width in the picosecond region is avoided in the design of the pulse gate. The shortest half-width of pulse is 0.2 ps. The spot size at usual pulse operations (several ps - several ns) is smaller than 0.1 µm. Examples of the two-dimensional voltage contrast images are shown in cases of 1 GHz Gunn diode and of a Simple 8 MHz IC.","PeriodicalId":218912,"journal":{"name":"1977 International Electron Devices Meeting","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128326661","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/IEDM.1977.189206
B. Welch, R. Eden
A unique fabrication technology is described for planar ion implanted GaAs integrated circuits. The planar processing techniques presented are compatible with any GaAs IC logic approach and promise fabrication yields compatible with the long-term goals of LSI circuit complexities. Planar depletion-mode GaAs ICs have been fabricated using multiple localized implantations directly into semi-insulating GaAs substrates. Fabrication techniques for the fine-line circuit lithography include the utilization of a 4× projection mask aligner. Performance of planar GaAs NOR gates exhibit excellent switching characteristics and low power levels.
{"title":"Planar GaAs integrated circuits fabricated by ion implantation","authors":"B. Welch, R. Eden","doi":"10.1109/IEDM.1977.189206","DOIUrl":"https://doi.org/10.1109/IEDM.1977.189206","url":null,"abstract":"A unique fabrication technology is described for planar ion implanted GaAs integrated circuits. The planar processing techniques presented are compatible with any GaAs IC logic approach and promise fabrication yields compatible with the long-term goals of LSI circuit complexities. Planar depletion-mode GaAs ICs have been fabricated using multiple localized implantations directly into semi-insulating GaAs substrates. Fabrication techniques for the fine-line circuit lithography include the utilization of a 4× projection mask aligner. Performance of planar GaAs NOR gates exhibit excellent switching characteristics and low power levels.","PeriodicalId":218912,"journal":{"name":"1977 International Electron Devices Meeting","volume":"83 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134143844","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/IEDM.1977.189323
A. Springthorpe, M. Rider
In this paper we describe the preparation and characterization of two novel kinds of double-heterostructure (DH) lasers which combine both the Burrus LED and oxide-stripe laser technologies. Laser emission from one of the devices (Type I) emerges from a pair of holes which are etched through the substrate to expose the n-GaAlAs first confining layer. The n-GaAlAs/air interface forms the mirrors of the resonant optical cavity and the laser emission is perpendicular to the gain region, (active layer of the DH). In the second device (Type II) the resonant cavity is formed between the n-GaAlAs/air interface and a
{"title":"Novel double-heterostructure lasers","authors":"A. Springthorpe, M. Rider","doi":"10.1109/IEDM.1977.189323","DOIUrl":"https://doi.org/10.1109/IEDM.1977.189323","url":null,"abstract":"In this paper we describe the preparation and characterization of two novel kinds of double-heterostructure (DH) lasers which combine both the Burrus LED and oxide-stripe laser technologies. Laser emission from one of the devices (Type I) emerges from a pair of holes which are etched through the substrate to expose the n-GaAlAs first confining layer. The n-GaAlAs/air interface forms the mirrors of the resonant optical cavity and the laser emission is perpendicular to the gain region, (active layer of the DH). In the second device (Type II) the resonant cavity is formed between the n-GaAlAs/air interface and a","PeriodicalId":218912,"journal":{"name":"1977 International Electron Devices Meeting","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134075404","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/IEDM.1977.189306
E. Valsamakis
The MOSFET equivalent circuit model described incorporates short channel and temperature effects. It includes expressions for the device current in the subthreshold, triode and saturation regions and uses a field dependent mobility and a drain voltage dependent threshold voltage. The drain current-voltage characteristic and its first derivative are continuous in all regions. Relationships for the gate-source and gate-drain capacitances are derived as a function of the device potentials using a field dependent mobility. Using the closed form expressions of this model, simulations were performed for micron long devices having uniform and ion-implanted channel profiles and compared with data at room, above room and liquid nitrogen temperature.
{"title":"A short channel MOSFET model","authors":"E. Valsamakis","doi":"10.1109/IEDM.1977.189306","DOIUrl":"https://doi.org/10.1109/IEDM.1977.189306","url":null,"abstract":"The MOSFET equivalent circuit model described incorporates short channel and temperature effects. It includes expressions for the device current in the subthreshold, triode and saturation regions and uses a field dependent mobility and a drain voltage dependent threshold voltage. The drain current-voltage characteristic and its first derivative are continuous in all regions. Relationships for the gate-source and gate-drain capacitances are derived as a function of the device potentials using a field dependent mobility. Using the closed form expressions of this model, simulations were performed for micron long devices having uniform and ion-implanted channel profiles and compared with data at room, above room and liquid nitrogen temperature.","PeriodicalId":218912,"journal":{"name":"1977 International Electron Devices Meeting","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132954077","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/IEDM.1977.189231
D. Draper, J. Barnes, F. Jenne
This paper presents experimental results for the performance of the VMOS EPROM device. The fabrication of the device is presented, followed by data for programmability and data retention. The device programs with lower applied voltages than other EPROM devices, and its projected data retention characteristic predicts a threshold drop of less than 1 volt in 40 years at 150°C junction temperature. EPROM device modeling for use in circuit simulation is also presented. Methods to calculate the capacitors associated with the device are shown for the VMOS geometry, and it is shown that no weak-inversion current exists due to drain coupling.
{"title":"Fabrication and characterization of a VMOS EPROM","authors":"D. Draper, J. Barnes, F. Jenne","doi":"10.1109/IEDM.1977.189231","DOIUrl":"https://doi.org/10.1109/IEDM.1977.189231","url":null,"abstract":"This paper presents experimental results for the performance of the VMOS EPROM device. The fabrication of the device is presented, followed by data for programmability and data retention. The device programs with lower applied voltages than other EPROM devices, and its projected data retention characteristic predicts a threshold drop of less than 1 volt in 40 years at 150°C junction temperature. EPROM device modeling for use in circuit simulation is also presented. Methods to calculate the capacitors associated with the device are shown for the VMOS geometry, and it is shown that no weak-inversion current exists due to drain coupling.","PeriodicalId":218912,"journal":{"name":"1977 International Electron Devices Meeting","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133273450","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/IEDM.1977.189186
D.H. Smith, L. Roberts, R. Knight
This paper describes an EBS amplifier for high power, broadband operation in the VHF/UHF frequency bands. The wideband EBS uses a deflected beam configuration with the semiconductor target internally interconnected to provide Class B operation. The electrical and mechanical design of this amplifier are described as well as representative performance data. To date, over 500W CW has been achieved at 50 MHz, and a bandwidth of 30-350 MHz has been achieved at 300 W CW. Further improvements in these performance levels are expected in the next few months leading to devices capable of 500W CW output over a 400 MHz band. Overall efficiencies in excess of 50% have been demonstrated, and typical power gain is in excess of 20dB. Linearity, intermodulation distortion, and harmonic content are described as well as life test data which predicts a life expectancy well in excess of 20,000 hours.
{"title":"A broadband high power EBS amplifier for VHF/UHF","authors":"D.H. Smith, L. Roberts, R. Knight","doi":"10.1109/IEDM.1977.189186","DOIUrl":"https://doi.org/10.1109/IEDM.1977.189186","url":null,"abstract":"This paper describes an EBS amplifier for high power, broadband operation in the VHF/UHF frequency bands. The wideband EBS uses a deflected beam configuration with the semiconductor target internally interconnected to provide Class B operation. The electrical and mechanical design of this amplifier are described as well as representative performance data. To date, over 500W CW has been achieved at 50 MHz, and a bandwidth of 30-350 MHz has been achieved at 300 W CW. Further improvements in these performance levels are expected in the next few months leading to devices capable of 500W CW output over a 400 MHz band. Overall efficiencies in excess of 50% have been demonstrated, and typical power gain is in excess of 20dB. Linearity, intermodulation distortion, and harmonic content are described as well as life test data which predicts a life expectancy well in excess of 20,000 hours.","PeriodicalId":218912,"journal":{"name":"1977 International Electron Devices Meeting","volume":"64 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116175433","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/IEDM.1977.189199
A. Ochoa, D. Hamilton
The distributed nature of devices has generally not been advantageously utilized by integrated circuit designers. Such effects have been regarded as parasitic and efforts to minimize their presence have allowed I.C. designers to proceed along design rules and philosophies little modified from those established for discrete circuits. One area that fully employs distributed properties of the device structure is that of Carrier Domain Devices (CDD's). The purpose of this paper is to present an analysis of CDD's based on Green's Functions, and to discuss some applications.
{"title":"Composite bipolar and field effect carrier domain devices","authors":"A. Ochoa, D. Hamilton","doi":"10.1109/IEDM.1977.189199","DOIUrl":"https://doi.org/10.1109/IEDM.1977.189199","url":null,"abstract":"The distributed nature of devices has generally not been advantageously utilized by integrated circuit designers. Such effects have been regarded as parasitic and efforts to minimize their presence have allowed I.C. designers to proceed along design rules and philosophies little modified from those established for discrete circuits. One area that fully employs distributed properties of the device structure is that of Carrier Domain Devices (CDD's). The purpose of this paper is to present an analysis of CDD's based on Green's Functions, and to discuss some applications.","PeriodicalId":218912,"journal":{"name":"1977 International Electron Devices Meeting","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126419598","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/IEDM.1977.189160
S. Kar
An attempt has been made to present a comprehensive theory for silicon MOS solar cells. This theory indicates that an increase in silicon band-bending, i.e. the silicon barrier, along with the expected increase in the oxide potential barrier with increasing oxide thickness reduces the majority carrier diode current by many orders of magnitude. This enhances the open-circuit voltage. The minority carrier photocurrent is not disturbed so long as the rate of minority carrier tunneling through the oxide remains larger than their rate of arrival at the interface. Detailed investigations are in progress to obtain experimental data on the dependence of interface states, tunneling transmission factor silicon band-bending, and the oxide voltage on the oxide thickness and the front contact metal. The experimental results obtained so far support the theory described here.
{"title":"Effects of interface states, tunneling, and metal in silicon MOS solar cells","authors":"S. Kar","doi":"10.1109/IEDM.1977.189160","DOIUrl":"https://doi.org/10.1109/IEDM.1977.189160","url":null,"abstract":"An attempt has been made to present a comprehensive theory for silicon MOS solar cells. This theory indicates that an increase in silicon band-bending, i.e. the silicon barrier, along with the expected increase in the oxide potential barrier with increasing oxide thickness reduces the majority carrier diode current by many orders of magnitude. This enhances the open-circuit voltage. The minority carrier photocurrent is not disturbed so long as the rate of minority carrier tunneling through the oxide remains larger than their rate of arrival at the interface. Detailed investigations are in progress to obtain experimental data on the dependence of interface states, tunneling transmission factor silicon band-bending, and the oxide voltage on the oxide thickness and the front contact metal. The experimental results obtained so far support the theory described here.","PeriodicalId":218912,"journal":{"name":"1977 International Electron Devices Meeting","volume":"109 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115123900","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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