Sergio A. Rincón-Ortiz, J. H. Quintero‐Orozco, R. Ospina
Pt thin film was characterized by hard x-ray photoelectron spectroscopy (HAXPES) with an Ag Lα (2984.3 eV) excitation source. Sample was fixed to a stainless-steel sample holder with a copper double-sided adhesive tape. The survey spectrum, Pt 3d, Pt 4f, Pt 4d, C 1s, and valence band core levels spectra were acquired.
{"title":"Platinum thin film by Ag Lα, hard x-ray photoelectron spectroscopy","authors":"Sergio A. Rincón-Ortiz, J. H. Quintero‐Orozco, R. Ospina","doi":"10.1116/6.0002800","DOIUrl":"https://doi.org/10.1116/6.0002800","url":null,"abstract":"Pt thin film was characterized by hard x-ray photoelectron spectroscopy (HAXPES) with an Ag Lα (2984.3 eV) excitation source. Sample was fixed to a stainless-steel sample holder with a copper double-sided adhesive tape. The survey spectrum, Pt 3d, Pt 4f, Pt 4d, C 1s, and valence band core levels spectra were acquired.","PeriodicalId":22006,"journal":{"name":"Surface Science Spectra","volume":" ","pages":""},"PeriodicalIF":1.3,"publicationDate":"2023-08-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"48884323","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
C. Zborowski, A. Vanleenhove, I. Hoflijk, I. Vaesen, K. Artyushkova, T. Conard
Aluminum was analyzed using high-resolution high energy x-ray photoelectron spectroscopy (HAXPES). The HAXPES spectra of Al obtained using monochromatic Cr Kα radiation at 5414.8 eV include survey scan and high-resolution spectra of Al 1s, Al 2s and Al 2p.
{"title":"High energy x-ray photoelectron spectroscopy (HAXPES) Cr Kα measurement of bulk aluminum","authors":"C. Zborowski, A. Vanleenhove, I. Hoflijk, I. Vaesen, K. Artyushkova, T. Conard","doi":"10.1116/6.0002696","DOIUrl":"https://doi.org/10.1116/6.0002696","url":null,"abstract":"Aluminum was analyzed using high-resolution high energy x-ray photoelectron spectroscopy (HAXPES). The HAXPES spectra of Al obtained using monochromatic Cr Kα radiation at 5414.8 eV include survey scan and high-resolution spectra of Al 1s, Al 2s and Al 2p.","PeriodicalId":22006,"journal":{"name":"Surface Science Spectra","volume":" ","pages":""},"PeriodicalIF":1.3,"publicationDate":"2023-08-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"43076492","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
C. Zborowski, A. Vanleenhove, I. Hoflijk, I. Vaesen, K. Artyushkova, T. Conard
Silver was analyzed using high-resolution high-energy x-ray photoelectron spectroscopy (HAXPES). The HAXPES spectra of Ag obtained using monochromatic Cr Kα radiation at 5414.8 eV include survey scan and high-resolution spectra of Ag 3d, Ag 3p3/2, Ag 3s; Ag 2p3/2, Ag 2s.
采用高分辨率高能x射线光电子能谱(HAXPES)对银进行分析。5414.8 eV下单色Cr Kα辐射获得Ag的HAXPES光谱，包括Ag 3d、Ag 3p3/2、Ag 3s的测量扫描和高分辨率光谱;Ag 2p3/2, Ag 2s。
{"title":"High energy x-ray photoelectron spectroscopy (HAXPES) Cr Kα measurement of bulk Ag","authors":"C. Zborowski, A. Vanleenhove, I. Hoflijk, I. Vaesen, K. Artyushkova, T. Conard","doi":"10.1116/6.0002672","DOIUrl":"https://doi.org/10.1116/6.0002672","url":null,"abstract":"Silver was analyzed using high-resolution high-energy x-ray photoelectron spectroscopy (HAXPES). The HAXPES spectra of Ag obtained using monochromatic Cr Kα radiation at 5414.8 eV include survey scan and high-resolution spectra of Ag 3d, Ag 3p3/2, Ag 3s; Ag 2p3/2, Ag 2s.","PeriodicalId":22006,"journal":{"name":"Surface Science Spectra","volume":" ","pages":""},"PeriodicalIF":1.3,"publicationDate":"2023-08-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"47208133","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Hard X-ray Photoelectron Spectroscopy (HAXPES) with monochromatic Cr Kα radiation (5414.8 eV) has been used to acquire XPS and Auger data on sputtered Au and Pt samples. Survey data, high-resolution scans of all observed photoelectron peaks, and high-resolution scans of the observed Auger lines are presented herein.
{"title":"HAXPES reference spectra of Au and Pt with Cr Kα excitation","authors":"Dong Zheng, C. N. Young, W. Stickle","doi":"10.1116/6.0002592","DOIUrl":"https://doi.org/10.1116/6.0002592","url":null,"abstract":"Hard X-ray Photoelectron Spectroscopy (HAXPES) with monochromatic Cr Kα radiation (5414.8 eV) has been used to acquire XPS and Auger data on sputtered Au and Pt samples. Survey data, high-resolution scans of all observed photoelectron peaks, and high-resolution scans of the observed Auger lines are presented herein.","PeriodicalId":22006,"journal":{"name":"Surface Science Spectra","volume":" ","pages":""},"PeriodicalIF":1.3,"publicationDate":"2023-08-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"46759373","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Sergio A. Rincón-Ortiz, J. H. Quintero‐Orozco, R. Ospina
X-ray photoelectron spectroscopy was used to characterize cobalt nitrate. The specimen is a powder purchased from Sigma Aldrich and was fixed to a stainless-steel sample holder with copper 3MTM double-sided adhesive tape. Survey spectra and Co 2p, N 1s, O 1s, C 1s, and Co 3p core level spectra were acquired. Results evidenced the chemical surface state and interactions of elements that constitute the cobalt nitrate.
{"title":"XPS characterization of cobalt nitrate","authors":"Sergio A. Rincón-Ortiz, J. H. Quintero‐Orozco, R. Ospina","doi":"10.1116/6.0002667","DOIUrl":"https://doi.org/10.1116/6.0002667","url":null,"abstract":"X-ray photoelectron spectroscopy was used to characterize cobalt nitrate. The specimen is a powder purchased from Sigma Aldrich and was fixed to a stainless-steel sample holder with copper 3MTM double-sided adhesive tape. Survey spectra and Co 2p, N 1s, O 1s, C 1s, and Co 3p core level spectra were acquired. Results evidenced the chemical surface state and interactions of elements that constitute the cobalt nitrate.","PeriodicalId":22006,"journal":{"name":"Surface Science Spectra","volume":" ","pages":""},"PeriodicalIF":1.3,"publicationDate":"2023-07-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"45798483","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Monochromatic Cr Kα radiation (5414.8 eV) has been used to acquire XPS and Auger data on silicon, silicon dioxide, silicon nitride, silicon carbide, and poly(dimethyl siloxane) samples. Survey data, high-resolution scans of all observed photoelectron peaks, and high-resolution scans of Auger lines are presented herein.
{"title":"HAXPES reference spectra of Si, SiO2, SiN, SiC, and poly(dimethyl siloxane) with Cr Kα excitation","authors":"Dong Zheng, C. N. Young, W. Stickle","doi":"10.1116/6.0002660","DOIUrl":"https://doi.org/10.1116/6.0002660","url":null,"abstract":"Monochromatic Cr Kα radiation (5414.8 eV) has been used to acquire XPS and Auger data on silicon, silicon dioxide, silicon nitride, silicon carbide, and poly(dimethyl siloxane) samples. Survey data, high-resolution scans of all observed photoelectron peaks, and high-resolution scans of Auger lines are presented herein.","PeriodicalId":22006,"journal":{"name":"Surface Science Spectra","volume":" ","pages":""},"PeriodicalIF":1.3,"publicationDate":"2023-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"47855331","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Monochromatic Cr Kα radiation (5414.8 eV) has been used to acquire XPS and Auger data on sputtered Ta and Ta2O5 samples. Survey data, high-resolution scans of all observed photoelectron peaks, and high-resolution scans of Auger lines are presented herein.
{"title":"HAXPES reference spectra of Ta and Ta2O5 with Cr Kα excitation","authors":"Dong Zheng, C. N. Young, W. Stickle","doi":"10.1116/6.0002551","DOIUrl":"https://doi.org/10.1116/6.0002551","url":null,"abstract":"Monochromatic Cr Kα radiation (5414.8 eV) has been used to acquire XPS and Auger data on sputtered Ta and Ta2O5 samples. Survey data, high-resolution scans of all observed photoelectron peaks, and high-resolution scans of Auger lines are presented herein.","PeriodicalId":22006,"journal":{"name":"Surface Science Spectra","volume":"71 4","pages":""},"PeriodicalIF":1.3,"publicationDate":"2023-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"41288750","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Dong Zheng, Christopher N. Young, William F. Stickle
Monochromatic Cr Kα radiation (5414.8 eV) has been used to acquire XPS and Auger data on a sputtered Pd sample. Survey data, high-resolution scans of all observed photoelectron peaks, and high-resolution scans of Auger lines are presented herein.
{"title":"HAXPES reference spectra of Pd with Cr Kα excitation","authors":"Dong Zheng, Christopher N. Young, William F. Stickle","doi":"10.1116/6.0002527","DOIUrl":"https://doi.org/10.1116/6.0002527","url":null,"abstract":"Monochromatic Cr Kα radiation (5414.8 eV) has been used to acquire XPS and Auger data on a sputtered Pd sample. Survey data, high-resolution scans of all observed photoelectron peaks, and high-resolution scans of Auger lines are presented herein.","PeriodicalId":22006,"journal":{"name":"Surface Science Spectra","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"136170504","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
J. Rodríguez-Pereira, David Alejandro Miranda Mercado, R. Ospina
Indium acetate was analyzed using x-ray photoelectron spectroscopy. The specimen is a powder purchased from Sigma Aldrich. The sample was fixed to a stainless-steel sample holder with copper 3MTM double-sided adhesive tape. Survey spectra, In 3d, O 1s, C 1s, In 3p, In MNN, and Cl 2p core levels spectra were acquired. Results showed how the elements in the structure of indium acetate are related.
{"title":"Indium acetate analyzed by XPS","authors":"J. Rodríguez-Pereira, David Alejandro Miranda Mercado, R. Ospina","doi":"10.1116/6.0002596","DOIUrl":"https://doi.org/10.1116/6.0002596","url":null,"abstract":"Indium acetate was analyzed using x-ray photoelectron spectroscopy. The specimen is a powder purchased from Sigma Aldrich. The sample was fixed to a stainless-steel sample holder with copper 3MTM double-sided adhesive tape. Survey spectra, In 3d, O 1s, C 1s, In 3p, In MNN, and Cl 2p core levels spectra were acquired. Results showed how the elements in the structure of indium acetate are related.","PeriodicalId":22006,"journal":{"name":"Surface Science Spectra","volume":" ","pages":""},"PeriodicalIF":1.3,"publicationDate":"2023-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"47371112","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Bishal Shrestha, S. Jaszewski, J. Ihlefeld, S. Wolfley, M. David Henry, N. Podraza
Ellipsometric spectra of polycrystalline thin film tantalum nitride (TaN) have been collected and analyzed to obtain the complex dielectric function (ɛ = ɛ1 + iɛ2) and complex refractive index (N = n + ik) spectra over the photon energy range of 0.059–8.500 eV. Complex optical properties are obtained for TaN in the as-deposited state and rapid thermal annealed at 750 °C for 30 s post deposition. A parametric expression including the contribution from intraband and interband transitions along with a structural model is used and fitted to experimental ellipsometric spectra using iterative least-square regression, which minimizes the unweighted error function or mean square error to extract complex optical properties. The parametric expression developed in this work is successful in describing and differentiating the optical response of measured as-deposited and annealed TaN films and can potentially be used to analyze the optical properties of similar TaN films regardless of their deposition techniques.
{"title":"Optical properties of pulsed dc magnetron sputtered thin film tantalum nitride by spectroscopic ellipsometry","authors":"Bishal Shrestha, S. Jaszewski, J. Ihlefeld, S. Wolfley, M. David Henry, N. Podraza","doi":"10.1116/6.0002441","DOIUrl":"https://doi.org/10.1116/6.0002441","url":null,"abstract":"Ellipsometric spectra of polycrystalline thin film tantalum nitride (TaN) have been collected and analyzed to obtain the complex dielectric function (ɛ = ɛ1 + iɛ2) and complex refractive index (N = n + ik) spectra over the photon energy range of 0.059–8.500 eV. Complex optical properties are obtained for TaN in the as-deposited state and rapid thermal annealed at 750 °C for 30 s post deposition. A parametric expression including the contribution from intraband and interband transitions along with a structural model is used and fitted to experimental ellipsometric spectra using iterative least-square regression, which minimizes the unweighted error function or mean square error to extract complex optical properties. The parametric expression developed in this work is successful in describing and differentiating the optical response of measured as-deposited and annealed TaN films and can potentially be used to analyze the optical properties of similar TaN films regardless of their deposition techniques.","PeriodicalId":22006,"journal":{"name":"Surface Science Spectra","volume":" ","pages":""},"PeriodicalIF":1.3,"publicationDate":"2023-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"48076473","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：