In this study, 4 common machine learning methods have been used to model the I–V characteristic of the Au/Ni/n-GaN/undoped GaN Schottky diode. The current values of previously produced Au/Ni/n-GaN/undoped GaN Schottky diode against the voltages applied to the diode terminal starting from the temperature of 40K up to 400K with 20K steps were measured. Models were created using Adaptive Neuro Fuzzy System, Artificial Neural Network, Support Vector Regression, and Gaussian Process Regression techniques using experimental data containing 5192 samples in total. After determining the combinations and specifications for each one that provide the lowest model error of each model, the performances of the obtained models were compared with each other concerning the various performance indices. The performance of the ANFIS model was found to be much better than the others in both the learning and test phases with RMSE model errors as 6.231e-06 and 6.806e-06, respectively. Therefore, it was proposed as a powerful tool for modeling I–V characteristics at all temperature values between 40K and 400K.
Optical bipolaron properties in the symmetric quantum dot were investigated using the Lee-Low-Pines-Huybrechts method and the Tokuda linear combination operator method. Algebraic expressions are derived for the energies of the fundamental and first excited states, the effective mass, mobility, binding energy and oscillation period of the optical bipolaron. Results prove that the energies of fundamental and first excited states increase with the coupling constant. Another point is that the strong coupling method dominates the weak coupling and the intermediate one when the electron-phonon coupling enhances. We also observe that the binding energy becomes always positive when confinement strength is above 5. In other points, the binding energy of optical bipolaron is well studied in all coupling, especially in weak coupling. It is also noticed that energies are increasing the function of the dielectric ratio and the oscillation period is reducing with the dielectric ratio. This proves that the electron-electron interaction is strengthened in a quantum dot. The stronger the coupling, the higher mobility in the case of low temperature.
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