Surfaces and Interfaces最新文献

{"title":"Influence of Al Buffer Layer Thickness on SEE Properties of Al and Au Co-doped MgO Film","authors":"Yue Su,&nbsp;Jie Li,&nbsp;Shengli Wu,&nbsp;Wenbo Hu","doi":"10.1016/j.surfin.2026.108588","DOIUrl":"10.1016/j.surfin.2026.108588","url":null,"abstract":"<div><div>There is a significant demand for high secondary electron emission (SEE) coefficients and long operational lifetimes in vacuum electronic devices. Therefore, the fabrication of thin films with excellent SEE performance has become increasingly critical. In this study, we demonstrate a simple yet effective approach to enhance the SEE coefficient and simultaneously reduce the decay rate of Al and Au co-doped MgO films by introducing a buffer layer and tuning its thickness. By investigating the crystallization behavior of films with varying buffer layer thicknesses, we reveal that the buffer layer significantly influences the surface morphology, chemical states, and band structure of the films, all of which play important roles in determining the final SEE performance. Notably, the Al and Au co-doped MgO film with a 40 nm-thick Al buffer layer exhibited the best SEE performance, improving the SEE coefficient from 5.03 to 5.32 while alleviating the decay rate from 13.6% to 9.8%. Compared to traditional approaches involving complex structural design, the strategy of incorporating a buffer layer offers a simple, reproducible, and scalable method for the fabrication of high-performance SEE films. The suitability of the optimized films for use in multipliers was demonstrated by the remarkable performance enhancement achieved upon their integration into the devices.</div></div>","PeriodicalId":22081,"journal":{"name":"Surfaces and Interfaces","volume":"84 ","pages":"Article 108588"},"PeriodicalIF":6.3,"publicationDate":"2026-01-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146090763","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Deactivation phenomena of highly B-doped SiGe epitaxial films subjected to nanosecond laser annealing followed by rapid thermal annealing","authors":"Chunghee Jo,&nbsp;Dae-Hong Ko","doi":"10.1016/j.surfin.2026.108589","DOIUrl":"10.1016/j.surfin.2026.108589","url":null,"abstract":"<div><div>Nanosecond laser annealing (NLA) is a promising technique for achieving ultra-high dopant activation in B-doped SiGe (SiGe:B) films while suppressing dopant diffusion, thus effectively reducing contact resistivity in semiconductor devices. Despite its advantages, these active dopants are susceptible to deactivation during subsequent thermal processes. This study investigates deactivation phenomena and kinetics in NLA-treated SiGe:B films with active B concentrations of 1.1×10²¹ (low-B), 2.2×10²¹ (medium-B), and 3.8×10²¹ (high-B) atoms/cm³ under post-annealing in low (400–700°C) and high (800–900°C) temperature regimes. The high-B samples exhibited deactivation at 550°C, with a reduction in active B exceeding 1×10²¹ atoms/cm³, which was larger than in the low-B and medium-B samples. B atoms in the high-B sample accumulated at the melted interface even at low temperature, forming numerous precipitates. At high temperature, precipitates became larger, and SiGe islands formed, resulting in increased surface roughness. In deactivated films, X-ray diffraction and X-ray photoelectron spectroscopy analyses revealed a decrease in substitutional B with a corresponding increase in B-cluster concentrations. Our results suggest that higher initial active B concentrations accelerate B clustering due to shorter average substitutional B distances (&lt;1 nm), leading to deactivation even at low temperatures. The activation energy for low-temperature deactivation in the high-B sample was determined to be 0.27 eV, which is lower than the reported value (∼3.5 eV) for B diffusion. Based on our comprehensive results, we propose a deactivation mechanism in which adjacent substitutional B atoms in highly B-doped films are directly transformed into B clusters without requiring long-range diffusion.</div></div>","PeriodicalId":22081,"journal":{"name":"Surfaces and Interfaces","volume":"84 ","pages":"Article 108589"},"PeriodicalIF":6.3,"publicationDate":"2026-01-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146090212","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Isotropic thermal atomic layer etching of 2D MoS2 using formic acid vapor","authors":"Hyewon Han ,&nbsp;Jieun Kang ,&nbsp;Jimin Kim ,&nbsp;Sunjae Jeong ,&nbsp;Siyeon Kim ,&nbsp;Gahee Oh ,&nbsp;Dahun Ko ,&nbsp;Sihoon Son ,&nbsp;Hyunbin Choi ,&nbsp;Doosan Kim ,&nbsp;Minjong Lee ,&nbsp;Taesung Kim ,&nbsp;Jiyoung Kim ,&nbsp;Geunyoung Yeom","doi":"10.1016/j.surfin.2026.108587","DOIUrl":"10.1016/j.surfin.2026.108587","url":null,"abstract":"<div><div>Two-dimensional (2D) transition metal dichalcogenides (TMDs) such as 2D MoS₂ exhibit diverse electronic and optoelectronic properties depending on their thickness, making reliable layer control essential for their integration into advanced materials and devices. As device architecture evolves into three-dimensional configurations, highly layer controlled isotropic etching has become increasingly important. In this study, we introduce an isotropic thermal atomic layer etching (ALE) process of 2D MoS₂ monolayers for the fabrication of 3D devices through the surface modification of monolayer MoS₂ by a remote oxygen plasma, followed by exposure to formic acid vapor for the removal of the oxidized monolayer by a chemical reaction under annealing conditions. This approach enables highly controllable, layer-by-layer etching while minimizing surface damage, as confirmed by X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, atomic force microscopy (AFM), and device-level measurements. Additionally, transmission electron microscopy (TEM) analysis of MoS₂ films suspended over three-dimensional trench structures confirmed the isotropic etching behavior. This study highlights the potential of organic-vapor-assisted ALE as a key technique for damage-free control of 2D material layer thickness, offering a promising pathway for next-generation semiconductor applications.</div></div>","PeriodicalId":22081,"journal":{"name":"Surfaces and Interfaces","volume":"84 ","pages":"Article 108587"},"PeriodicalIF":6.3,"publicationDate":"2026-01-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146090237","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Experimental analysis on surface integrity and biocompatibility nature of submerged waterjet peened AZ31B Mg for biomedical applications","authors":"Mugilvalavan Mohan ,&nbsp;Yuvaraj Natarajan ,&nbsp;Muruganandhan Radhakrishnan ,&nbsp;Song-Jeng Huang ,&nbsp;Sathiyalingam Kannaiyan ,&nbsp;Arunkumar Thirugnanasambandam","doi":"10.1016/j.surfin.2026.108594","DOIUrl":"10.1016/j.surfin.2026.108594","url":null,"abstract":"<div><div>This paper describes the submerged waterjet peening process as a sustainable processing technique for the improvement of surface integrity, corrosion resistance, and biocompatibility of AZ31B Magnesium alloy as biodegradable implants. After submerged waterjet peening, the AZ31B Magnesium alloy surface exhibited significant strengthening and a better surface finish, as evidenced by the maximum surface microhardness (147.53 ± 2.8HV_0.05) and lower roughness (0.929 ± 0.02 µm) results. The optimised parametric combination (Waterjet Pressure = 200 MPa, Standoff distance = 1 mm, Traverse Speed = 40 mm/min) produced significant changes in the surface morphology and topography of the AZ31B Magnesium alloy. The resultant effect produced a reduction in crystallite size, accompanied by the formation of considerable residual stresses and a decrease in surface skewness, valley depth, and root mean square roughness. This further produced plateau-like textures with an enhanced relative material ratio that helped in load-bearing capacity and fluid retention. X-ray Diffraction studies indicate that a 22.24% increase in compressive residual stress can enhance corrosion resistance. Electrochemical corrosion testing in simulated body fluid confirms the reduced corrosion rate from 0.00155mm/yr to 0.000183 mm/year, attributed to passive film formation. Cytotoxicity assays confirmed &gt; 80% MG63 cell viability after 72 hours, linked to increased hydrophilicity behaviour and higher surface energy of the peened sample over the base material, which promoted protein adsorption and cell adhesion. These synergistic topographical, mechanical, and electrochemical improvements position Submerged Waterjet Peening for developing high-performance biodegradable Magnesium implants.</div></div>","PeriodicalId":22081,"journal":{"name":"Surfaces and Interfaces","volume":"84 ","pages":"Article 108594"},"PeriodicalIF":6.3,"publicationDate":"2026-01-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146090758","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Structural and electronic properties of Q-carbon/AlN heterostructures","authors":"Luiz A.F.C. Viana ,&nbsp;Nathan R. Martins ,&nbsp;Saif Taqy ,&nbsp;Ariful Haque ,&nbsp;Luísa Scolfaro ,&nbsp;Pablo D. Borges","doi":"10.1016/j.surfin.2026.108591","DOIUrl":"10.1016/j.surfin.2026.108591","url":null,"abstract":"<div><div>This work presents a theoretical study of the structural and electronic properties of the heterostructure comprised of aluminum nitride (AlN) and Q-carbon (quenched carbon) using first-principles calculations within the density functional theory and hybrid functionals. 2 × 2 × 5 AlN supercells in the wurtzite structure were built considering four different surface terminations: Al terminated (Al-term), N terminated (N-term), Al terminated with aluminum vacancy (V_Al) at the surface, and Al terminated with adsorbed oxygen (O_ads). Q-carbon cells theoretically synthesized were placed upon the AlN supercells, forming the heterostructure. We find that the AlN slab supercells showed conductor behavior at the surface whereas semiconductor behavior after the 3^rd Al-N bilayer, reproducing the bulk material. The Al-N bond lengths in the complete heterostructures suffered considerable variations in the 1^st and 2^nd bilayers of the O_ads and V_Al situations due to the electronic interactions between AlN superficial atoms and Q-carbon. Bader charge and charge density distribution analysis showed that for Al-term, only the superficial Al atoms interact with Q-carbon; for N-term, there was strong interaction between N superficial atoms and Q-carbon, with only small Al atoms participation; the V_Al situation presented a mixed behavior of Al-term and N-term; the heterostructure with O_ads showed charge density shift from interfacial aluminum and carbon atoms towards oxygen. The interfacial energetic analysis showed that the Q-carbon/AlN N-term was the most stable heterostructure, presenting a work of separation approximately 3.5 times higher than the other three systems. The density of states for the heterostructures indicated semiconductor character for Al-term, V_Al, and O_ads heterostructures, with the band gap defined by the presence of Q-carbon close to the valence top and superficial states of AlN close to the conduction band minimum. For the N-term, Q-carbon and superficial AlN states resulted in a heterostructure with metallic behavior. For the Al-term, N-term and O_ads heterostructures, from the 3^rd AlN bilayer, the materials presented band gaps comparable to the one reported for bulk AlN. The V_Al showed intermediate behavior between Al-term and N-term, with no increasing in the band gap from the 3^rd AlN bilayer.</div></div>","PeriodicalId":22081,"journal":{"name":"Surfaces and Interfaces","volume":"84 ","pages":"Article 108591"},"PeriodicalIF":6.3,"publicationDate":"2026-01-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146090207","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Crosslinked amyloid fibril aerogels for selective separation and recycling of organic contaminants","authors":"Yuan Li ,&nbsp;Ji-Hao Hao ,&nbsp;Pei Yu ,&nbsp;Dao-Tong Deng ,&nbsp;Xiang Di ,&nbsp;Chun-Gang Yuan","doi":"10.1016/j.surfin.2026.108590","DOIUrl":"10.1016/j.surfin.2026.108590","url":null,"abstract":"<div><div>Crosslinked amyloid fibril aerogels (cAFA) exhibited outstanding adsorption performances on a wide range of organic contaminants. Theoretically, this capability on multiple-pollutant removal leads to low selectivity of aerogels on these pollutants. Interestingly, our pre-experiments showed that the adsorptive spectrum of cAFA on their adsorbable dyes seemed not “that” broad, since the aerogels fabricated by bovine serum albumin (BSA) and β-lactoglobulin (βLG) cannot enrich phenothiazine and azobenzene dyes, respectively. Inspired by the mechanism of Congo red staining on amyloid fibrils, the exclusive effect on these dyes may be caused by their low binding intensity with the amyloid-forming cores. Therefore, the aerogels may preferentially pick up dyes with high affinity and leave off dyes with low affinity. By utilizing the possible mechanism on the exclusion effect of aerogels, a recycling method for two mixed organics was designed by adding two different aerogels with a certain order. Furthermore, the separation performance of both aerogels on dye selectivity was leading and promising among numerous currently-reported works. Besides, the correspondence separation factors on other binary mixture were also remarkable, indicating that cAFA possessed a great potential on selecting or recycling organic matters and their derivatives.</div></div>","PeriodicalId":22081,"journal":{"name":"Surfaces and Interfaces","volume":"84 ","pages":"Article 108590"},"PeriodicalIF":6.3,"publicationDate":"2026-01-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146090297","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Stepwise activation for preparing narrow microporous coal-derived carbon towards high-performance supercapacitors","authors":"Yan Ye,&nbsp;Xiaoqin Yang,&nbsp;Wanqing Li,&nbsp;Zaixin Wu,&nbsp;Zhihong Qin","doi":"10.1016/j.surfin.2026.108560","DOIUrl":"10.1016/j.surfin.2026.108560","url":null,"abstract":"<div><div>Coal is a promising precursor for porous carbon materials owing to its abundant reserves, high carbon content, and cost-effectiveness. This study utilizes hydrothermally pretreated coal-based heavy component (HTHC) as the carbon source and KOH as the activator to synthesize microporous carbons for high-performance supercapacitors. The synthesis employs a two-step temperature-programmed activation process: low-temperature pore pre-construction at 550 °C followed by high-temperature short-term (5 min) etching at 750 °C. The resulting material, designated as HPC-GT5, exhibits a hierarchical pore structure dominated by narrow micropores (0.8 nm). In a three-electrode system, it delivers a specific capacitance of 404.1 F/g at 1 A/g and a rate performance retention of 81.19% at 20 A/g. Symmetric supercapacitor assembled with HPC-GT5 achieves an energy density of 12.85 Wh/kg. Moreover, the device shows no capacitance decay after 10,000 charge-discharge cycles at 10 A/g. The superior electrochemical performance is attributed to the stepwise activation strategy, which imparts HPC-GT5 with efficient charge storage capacity and robust cycle stability.</div></div>","PeriodicalId":22081,"journal":{"name":"Surfaces and Interfaces","volume":"83 ","pages":"Article 108560"},"PeriodicalIF":6.3,"publicationDate":"2026-01-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146080411","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Modulating S-scheme charge transfer in Ag2Mo2O7/TiO2 nanobelt heterojunctions via interface engineering for enhanced photocatalysis and antimicrobial activity","authors":"Jinge Du ,&nbsp;Wei Liu ,&nbsp;Yuan Su ,&nbsp;Mengjia Zhao ,&nbsp;Ke Lu ,&nbsp;Jianguo Zhou ,&nbsp;Yingling Wang ,&nbsp;Bijie Jiang ,&nbsp;Zhen An","doi":"10.1016/j.surfin.2026.108586","DOIUrl":"10.1016/j.surfin.2026.108586","url":null,"abstract":"<div><div>Construction of S-scheme heterojunctions is widely regarded as an effective strategy for enhancing the photocatalytic performance of composite materials. In this study, a series of S-scheme Ag₂Mo₂O₇/TiO₂ nanobelt-based photocatalysts were successfully synthesized through an integrated hydrothermal and co-precipitation approach. Photocatalytic degradation experiments demonstrated that the optimized catalyst achieved 100% degradation of oxytetracycline and 85.0% degradation of bisphenol A. Additionally, approximately 1.6 × 10^7.2 cfu/mL <em>Escherichia coli</em> was inactivated within 60 min. The remarkable enhancement in photocatalytic performance is ascribed to two principal factors: (i) the rough-surface TiO₂ nanobelts provided abundant nucleation sites for Ag₂Mo₂O₇ formation, and (ii) the S-scheme heterojunction facilitated efficient separation and transfer of charge carriers. The synergistic effects of the built-in electric field, band bending, and Coulomb interactions facilitated selective recombination of low-energy electrons and holes at the heterojunction interface under simulated sunlight, while preserving high-energy electrons with enhanced reducibility and holes with reinforced oxidative potential, thereby granting the composite with outstanding redox capabilities. The results from X-ray photoelectron spectroscopy (XPS), radical scavenging experiments, electron spin resonance (ESR) analysis, and density functional theory (DFT) simulations collectively confirm that the charge transfer mechanism in the photocatalytic system strictly follows the S-scheme heterojunction conduction pathway. This study provides new fundamental insights into the design and synthesis of S-scheme photocatalysts and offers a promising strategy for practical water purification applications, driving further progress in photocatalytic environmental remediation.</div></div>","PeriodicalId":22081,"journal":{"name":"Surfaces and Interfaces","volume":"84 ","pages":"Article 108586"},"PeriodicalIF":6.3,"publicationDate":"2026-01-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146049120","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Stability analyses of self-catalyzed planar GaAs nanowire growth on structured surface by Monte Carlo simulation","authors":"Snezhana V. Mantsurova ,&nbsp;Nataliya L. Shwartz","doi":"10.1016/j.surfin.2026.108584","DOIUrl":"10.1016/j.surfin.2026.108584","url":null,"abstract":"<div><div>The conditions for stable unidirectional growth of planar GaAs nanowires on silicon substrates are searched using Monte Carlo simulation. The influence of temperature and trench orientation of the structured surface on the self-catalyzed planar GaAs nanowire growth stability is analyzed. The key factor for the stable planar nanowire growth is not only properly selected growth conditions, but also the direction of the trenches determining the crystal growth orientation. It is shown that the probability of stable planar nanowire growth increases with increasing temperature. The influence of the nanowire crystallization front geometry on the probability of stable growth or switch from the planar to inclined growth is demonstrated for trenches oriented along [<span><math><mrow><mover><mn>2</mn><mo>¯</mo></mover><mn>11</mn></mrow></math></span>] and [<span><math><mrow><mn>01</mn><mover><mn>1</mn><mo>¯</mo></mover></mrow></math></span>] directions. The optimal trench orientation to increase the stable planar nanowire yield on the structured surface is identified.</div></div>","PeriodicalId":22081,"journal":{"name":"Surfaces and Interfaces","volume":"84 ","pages":"Article 108584"},"PeriodicalIF":6.3,"publicationDate":"2026-01-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146090168","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Enhanced interfacial adhesion strength and reduced warpage of copper electrodeposited epoxy composite substrates by annealing treatment","authors":"Shanjun Ding,&nbsp;Man Li,&nbsp;Mengxi Liu,&nbsp;Xiaomeng Wu,&nbsp;Chuan Chen,&nbsp;Qichang An,&nbsp;Zhidan Fang,&nbsp;Qidong Wang","doi":"10.1016/j.surfin.2026.108573","DOIUrl":"10.1016/j.surfin.2026.108573","url":null,"abstract":"<div><div>Enhancing interfacial adhesion strength and reducing warpage is critical for developing large size flip-chip ball grid array (FCBGA) substrates in the field of advanced packaging. Copper can affect adhesion strength and warpage of substrates. However, the effect of the annealing process on adhesion strength and warpage has not been focused on so far. Herein, a panel-level FCBGA substrate with four layers and dimensions of 400 mm × 250 mm was fabricated and used to study adhesion properties and warpage. By adjusting the annealing time at 190 °C, the interfacial copper oxide and internal stress of electroplated copper were optimized, thereby improving adhesion strength and reducing warpage. The results showed that when the annealing time increased from 0 h to 6 h, the adhesion strength increased by about 28% and the maximum warpage value decreased by 62.2%. The mechanisms underlying the increased adhesion strength and reduced warpage were explained in detail. This work provides guidance both theoretically and experimentally to enhance adhesion strength and suppress warpage of FCBGA substrates in the future.</div></div>","PeriodicalId":22081,"journal":{"name":"Surfaces and Interfaces","volume":"84 ","pages":"Article 108573"},"PeriodicalIF":6.3,"publicationDate":"2026-01-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146090228","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}