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Multifunctional N-doped carbon dots: Integrating corrosion protection and Fe³⁺-responsive warning for steel in acidic environments 多功能n掺杂碳点:集钢在酸性环境中的防腐和Fe +响应预警于一体
IF 6.3 2区 材料科学 Q2 CHEMISTRY, PHYSICAL Pub Date : 2026-01-24 DOI: 10.1016/j.surfin.2026.108592
Ziyu Wang , Yequn Liu , Mingjun Cui , Xinyue Li , Jiate Xue , Siming Ren
Carbon dots have attracted wide interest in corrosion fields due to their superior corrosion inhibition performance, low toxicity and tunable surface functionality. In this work, novel N-doped carbon dots (N-CDs) with dual functionalities—corrosion inhibition and corrosion warning were synthesized via a hydrothermal route and applied to protect carbon steel in strong acid environments. The corrosion inhibition performance of the N-CDs was systematically evaluated using electrochemical measurements, weight loss tests, and surface characterization techniques. Among the synthesized samples, N-CDs derived from L-phenylalanine and L-tryptophan (1:1 molar ratio) exhibited outstanding corrosion inhibition to carbon steel in 1M HCl solution, achieving higher corrosion inhibition efficiency of 96.04% at a concentration of 200 ppm in 1M HCl solution. Mechanistic studies revealed that the inhibition process involved both physisorption and chemisorption, conforming to the Langmuir adsorption isotherm. Moreover, the N-CDs displayed pronounced fluorescence quenching toward Fe³⁺ ions, enabling early-stage detection of corrosion onset. This study presents a multifunctional carbon-based nanomaterial that integrates high-performance corrosion protection with real-time corrosion monitoring, offering new prospects for advanced corrosion control in harsh environments.
由于碳点具有优异的缓蚀性能、低毒性和可调的表面功能,在腐蚀领域引起了广泛的兴趣。本文通过水热法合成了具有缓蚀和腐蚀预警双重功能的新型n掺杂碳点(N-CDs),并将其应用于强酸环境中对碳钢的保护。通过电化学测量、失重测试和表面表征技术,系统地评估了N-CDs的缓蚀性能。在所合成的样品中,l -苯丙氨酸和l -色氨酸(摩尔比为1:1)合成的N-CDs在1M HCl溶液中对碳钢具有良好的缓蚀作用,在浓度为200 ppm的1M HCl溶液中缓蚀效率达到96.04%。机理研究表明,吸附过程包括物理吸附和化学吸附,符合Langmuir吸附等温线。此外,N-CDs对Fe +表现出明显的荧光猝灭,从而能够早期检测腐蚀发生。本研究提出了一种集高性能腐蚀防护与实时腐蚀监测于一体的多功能碳基纳米材料,为恶劣环境下的先进腐蚀控制提供了新的前景。
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引用次数: 0
Deactivation phenomena of highly B-doped SiGe epitaxial films subjected to nanosecond laser annealing followed by rapid thermal annealing 高b掺杂SiGe外延薄膜经纳秒激光退火后再快速热退火后的失活现象
IF 6.3 2区 材料科学 Q2 CHEMISTRY, PHYSICAL Pub Date : 2026-01-24 DOI: 10.1016/j.surfin.2026.108589
Chunghee Jo, Dae-Hong Ko
Nanosecond laser annealing (NLA) is a promising technique for achieving ultra-high dopant activation in B-doped SiGe (SiGe:B) films while suppressing dopant diffusion, thus effectively reducing contact resistivity in semiconductor devices. Despite its advantages, these active dopants are susceptible to deactivation during subsequent thermal processes. This study investigates deactivation phenomena and kinetics in NLA-treated SiGe:B films with active B concentrations of 1.1×1021 (low-B), 2.2×1021 (medium-B), and 3.8×1021 (high-B) atoms/cm3 under post-annealing in low (400–700°C) and high (800–900°C) temperature regimes. The high-B samples exhibited deactivation at 550°C, with a reduction in active B exceeding 1×1021 atoms/cm3, which was larger than in the low-B and medium-B samples. B atoms in the high-B sample accumulated at the melted interface even at low temperature, forming numerous precipitates. At high temperature, precipitates became larger, and SiGe islands formed, resulting in increased surface roughness. In deactivated films, X-ray diffraction and X-ray photoelectron spectroscopy analyses revealed a decrease in substitutional B with a corresponding increase in B-cluster concentrations. Our results suggest that higher initial active B concentrations accelerate B clustering due to shorter average substitutional B distances (<1 nm), leading to deactivation even at low temperatures. The activation energy for low-temperature deactivation in the high-B sample was determined to be 0.27 eV, which is lower than the reported value (∼3.5 eV) for B diffusion. Based on our comprehensive results, we propose a deactivation mechanism in which adjacent substitutional B atoms in highly B-doped films are directly transformed into B clusters without requiring long-range diffusion.
纳秒激光退火(NLA)是一种很有前途的技术,可以在抑制掺杂物扩散的同时,在B掺杂SiGe (SiGe:B)薄膜中实现超高掺杂物活化,从而有效降低半导体器件中的接触电阻率。尽管有这些优点,但这些活性掺杂剂在随后的热过程中容易失活。本研究研究了nla处理的活性B浓度为1.1×1021(低B)、2.2×1021(中B)和3.8×1021(高B)原子/cm3的SiGe:B薄膜在低(400-700°C)和高(800-900°C)温度下退火后的失活现象和动力学。高B样品在550°C时失活,活性B的减少量超过1×1021原子/cm3,比低B和中B样品大。即使在低温下,高硼样品中的B原子仍在熔化界面积聚,形成大量析出物。在高温下,析出物变大,形成SiGe岛,导致表面粗糙度增大。在失活膜中,x射线衍射和x射线光电子能谱分析显示,B簇浓度相应增加,取代B减少。我们的研究结果表明,较高的初始活性B浓度由于较短的平均取代B距离(<1 nm)而加速了B的聚集,即使在低温下也会导致失活。测定了高B样品低温失活的活化能为0.27 eV,低于B扩散的报告值(~ 3.5 eV)。基于我们的综合结果,我们提出了一种失活机制,在这种机制中,高B掺杂薄膜中的相邻取代B原子直接转化为B簇,而不需要远距离扩散。
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引用次数: 0
Isotropic thermal atomic layer etching of 2D MoS2 using formic acid vapor 用甲酸蒸气进行二维二硫化钼的各向同性热原子层刻蚀
IF 6.3 2区 材料科学 Q2 CHEMISTRY, PHYSICAL Pub Date : 2026-01-24 DOI: 10.1016/j.surfin.2026.108587
Hyewon Han , Jieun Kang , Jimin Kim , Sunjae Jeong , Siyeon Kim , Gahee Oh , Dahun Ko , Sihoon Son , Hyunbin Choi , Doosan Kim , Minjong Lee , Taesung Kim , Jiyoung Kim , Geunyoung Yeom
Two-dimensional (2D) transition metal dichalcogenides (TMDs) such as 2D MoS2 exhibit diverse electronic and optoelectronic properties depending on their thickness, making reliable layer control essential for their integration into advanced materials and devices. As device architecture evolves into three-dimensional configurations, highly layer controlled isotropic etching has become increasingly important. In this study, we introduce an isotropic thermal atomic layer etching (ALE) process of 2D MoS2 monolayers for the fabrication of 3D devices through the surface modification of monolayer MoS2 by a remote oxygen plasma, followed by exposure to formic acid vapor for the removal of the oxidized monolayer by a chemical reaction under annealing conditions. This approach enables highly controllable, layer-by-layer etching while minimizing surface damage, as confirmed by X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, atomic force microscopy (AFM), and device-level measurements. Additionally, transmission electron microscopy (TEM) analysis of MoS2 films suspended over three-dimensional trench structures confirmed the isotropic etching behavior. This study highlights the potential of organic-vapor-assisted ALE as a key technique for damage-free control of 2D material layer thickness, offering a promising pathway for next-generation semiconductor applications.
二维(2D)过渡金属二硫化物(TMDs),如二维MoS2,根据其厚度表现出不同的电子和光电子特性,这使得可靠的层控制对其集成到先进材料和器件中至关重要。随着器件结构向三维结构发展,高度层控的各向同性刻蚀变得越来越重要。在本研究中,我们介绍了一种二维MoS2单层的各向同性热原子层蚀刻(ALE)工艺,该工艺通过远程氧等离子体对单层MoS2进行表面改性,然后在退火条件下暴露于甲酸蒸汽中通过化学反应去除氧化的单层,用于制造3D器件。这种方法可以实现高度可控的逐层蚀刻,同时最大限度地减少表面损伤,如x射线光电子能谱(XPS)、拉曼光谱、原子力显微镜(AFM)和设备级测量所证实的那样。此外,透射电子显微镜(TEM)分析了悬浮在三维沟槽结构上的MoS2薄膜的各向同性蚀刻行为。这项研究强调了有机蒸汽辅助ALE作为无损控制二维材料层厚度的关键技术的潜力,为下一代半导体应用提供了一条有前途的途径。
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引用次数: 0
Experimental analysis on surface integrity and biocompatibility nature of submerged waterjet peened AZ31B Mg for biomedical applications 生物医学用浸没水喷丸AZ31B Mg表面完整性及生物相容性实验分析
IF 6.3 2区 材料科学 Q2 CHEMISTRY, PHYSICAL Pub Date : 2026-01-24 DOI: 10.1016/j.surfin.2026.108594
Mugilvalavan Mohan , Yuvaraj Natarajan , Muruganandhan Radhakrishnan , Song-Jeng Huang , Sathiyalingam Kannaiyan , Arunkumar Thirugnanasambandam
This paper describes the submerged waterjet peening process as a sustainable processing technique for the improvement of surface integrity, corrosion resistance, and biocompatibility of AZ31B Magnesium alloy as biodegradable implants. After submerged waterjet peening, the AZ31B Magnesium alloy surface exhibited significant strengthening and a better surface finish, as evidenced by the maximum surface microhardness (147.53 ± 2.8HV0.05) and lower roughness (0.929 ± 0.02 µm) results. The optimised parametric combination (Waterjet Pressure = 200 MPa, Standoff distance = 1 mm, Traverse Speed = 40 mm/min) produced significant changes in the surface morphology and topography of the AZ31B Magnesium alloy. The resultant effect produced a reduction in crystallite size, accompanied by the formation of considerable residual stresses and a decrease in surface skewness, valley depth, and root mean square roughness. This further produced plateau-like textures with an enhanced relative material ratio that helped in load-bearing capacity and fluid retention. X-ray Diffraction studies indicate that a 22.24% increase in compressive residual stress can enhance corrosion resistance. Electrochemical corrosion testing in simulated body fluid confirms the reduced corrosion rate from 0.00155mm/yr to 0.000183 mm/year, attributed to passive film formation. Cytotoxicity assays confirmed > 80% MG63 cell viability after 72 hours, linked to increased hydrophilicity behaviour and higher surface energy of the peened sample over the base material, which promoted protein adsorption and cell adhesion. These synergistic topographical, mechanical, and electrochemical improvements position Submerged Waterjet Peening for developing high-performance biodegradable Magnesium implants.
本文介绍了浸没水射流强化工艺作为一种可持续的加工技术,可以提高AZ31B镁合金作为可生物降解植入物的表面完整性、耐腐蚀性和生物相容性。浸没水射流强化后,AZ31B镁合金表面强化效果明显,表面光洁度较好,表面显微硬度最高(147.53±2.8HV0.05),粗糙度较低(0.929±0.02µm)。优化后的参数组合(水射流压力= 200 MPa,距= 1 mm,横移速度= 40 mm/min)使AZ31B镁合金的表面形貌和形貌发生了显著变化。由此产生的影响产生了晶体尺寸的减小,伴随着相当大的残余应力的形成和表面偏度、谷深和均方根粗糙度的减小。这进一步产生了高原状纹理,增强了相对材料比,有助于承载能力和液体潴留。x射线衍射研究表明,残余压应力增加22.24%可提高耐蚀性。在模拟体液中的电化学腐蚀测试证实,由于钝化膜的形成,腐蚀速率从0.00155毫米/年降低到0.000183毫米/年。细胞毒性试验证实,72小时后MG63细胞存活率为80%,这与增强的亲水性行为和增强的表面能有关,这促进了蛋白质吸附和细胞粘附。这些协同的地形、机械和电化学的改进为开发高性能可生物降解的镁植入物奠定了基础。
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引用次数: 0
Structural and electronic properties of Q-carbon/AlN heterostructures q -碳/AlN异质结构的结构和电子性能
IF 6.3 2区 材料科学 Q2 CHEMISTRY, PHYSICAL Pub Date : 2026-01-24 DOI: 10.1016/j.surfin.2026.108591
Luiz A.F.C. Viana , Nathan R. Martins , Saif Taqy , Ariful Haque , Luísa Scolfaro , Pablo D. Borges
This work presents a theoretical study of the structural and electronic properties of the heterostructure comprised of aluminum nitride (AlN) and Q-carbon (quenched carbon) using first-principles calculations within the density functional theory and hybrid functionals. 2 × 2 × 5 AlN supercells in the wurtzite structure were built considering four different surface terminations: Al terminated (Al-term), N terminated (N-term), Al terminated with aluminum vacancy (VAl) at the surface, and Al terminated with adsorbed oxygen (Oads). Q-carbon cells theoretically synthesized were placed upon the AlN supercells, forming the heterostructure. We find that the AlN slab supercells showed conductor behavior at the surface whereas semiconductor behavior after the 3rd Al-N bilayer, reproducing the bulk material. The Al-N bond lengths in the complete heterostructures suffered considerable variations in the 1st and 2nd bilayers of the Oads and VAl situations due to the electronic interactions between AlN superficial atoms and Q-carbon. Bader charge and charge density distribution analysis showed that for Al-term, only the superficial Al atoms interact with Q-carbon; for N-term, there was strong interaction between N superficial atoms and Q-carbon, with only small Al atoms participation; the VAl situation presented a mixed behavior of Al-term and N-term; the heterostructure with Oads showed charge density shift from interfacial aluminum and carbon atoms towards oxygen. The interfacial energetic analysis showed that the Q-carbon/AlN N-term was the most stable heterostructure, presenting a work of separation approximately 3.5 times higher than the other three systems. The density of states for the heterostructures indicated semiconductor character for Al-term, VAl, and Oads heterostructures, with the band gap defined by the presence of Q-carbon close to the valence top and superficial states of AlN close to the conduction band minimum. For the N-term, Q-carbon and superficial AlN states resulted in a heterostructure with metallic behavior. For the Al-term, N-term and Oads heterostructures, from the 3rd AlN bilayer, the materials presented band gaps comparable to the one reported for bulk AlN. The VAl showed intermediate behavior between Al-term and N-term, with no increasing in the band gap from the 3rd AlN bilayer.
本文利用密度泛函理论和杂化泛函中的第一性原理计算,对氮化铝(AlN)和q -碳(淬火碳)组成的异质结构的结构和电子特性进行了理论研究。在纤锌矿结构中,考虑4种不同的表面末端:Al端(Al term), N端(N term), Al端以铝空位(VAl)终止,Al端以吸附氧(Oads)终止,构建了2 × 2 × 5 AlN超级电池。将理论上合成的q -碳细胞置于AlN超细胞之上,形成异质结构。我们发现AlN板状超级电池在表面表现出导体行为,而在第三层Al-N双层之后表现出半导体行为,再现了块状材料。由于Al-N表面原子与q -碳之间的电子相互作用,完整异质结构中的Al-N键长度在Oads和VAl的第1层和第2层发生了相当大的变化。Bader电荷和电荷密度分布分析表明,对于Al项,只有表面Al原子与q -碳相互作用;对于N项,N表面原子与q -碳之间存在较强的相互作用,只有少量Al原子参与;VAl情况表现为al项和n项的混合行为;带负载的异质结构显示出电荷密度从铝和碳原子界面向氧原子方向转移。界面能分析表明,q -碳/AlN n项是最稳定的异质结构,其分离功约为其他三种体系的3.5倍。异质结构的态密度表明al term、VAl和Oads异质结构具有半导体特征,带隙由q -碳靠近价带顶部和AlN的表面态接近导带最小值定义。对于n项,q -碳态和表面AlN态导致具有金属行为的异质结构。对于Al-term, N-term和Oads异质结构,来自第三AlN双层的材料呈现出与块状AlN相当的带隙。VAl表现出介于al项和n项之间的中间行为,从第3 AlN双层开始带隙没有增加。
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引用次数: 0
Crosslinked amyloid fibril aerogels for selective separation and recycling of organic contaminants 交联淀粉样纤维气凝胶用于有机污染物的选择性分离和回收
IF 6.3 2区 材料科学 Q2 CHEMISTRY, PHYSICAL Pub Date : 2026-01-24 DOI: 10.1016/j.surfin.2026.108590
Yuan Li , Ji-Hao Hao , Pei Yu , Dao-Tong Deng , Xiang Di , Chun-Gang Yuan
Crosslinked amyloid fibril aerogels (cAFA) exhibited outstanding adsorption performances on a wide range of organic contaminants. Theoretically, this capability on multiple-pollutant removal leads to low selectivity of aerogels on these pollutants. Interestingly, our pre-experiments showed that the adsorptive spectrum of cAFA on their adsorbable dyes seemed not “that” broad, since the aerogels fabricated by bovine serum albumin (BSA) and β-lactoglobulin (βLG) cannot enrich phenothiazine and azobenzene dyes, respectively. Inspired by the mechanism of Congo red staining on amyloid fibrils, the exclusive effect on these dyes may be caused by their low binding intensity with the amyloid-forming cores. Therefore, the aerogels may preferentially pick up dyes with high affinity and leave off dyes with low affinity. By utilizing the possible mechanism on the exclusion effect of aerogels, a recycling method for two mixed organics was designed by adding two different aerogels with a certain order. Furthermore, the separation performance of both aerogels on dye selectivity was leading and promising among numerous currently-reported works. Besides, the correspondence separation factors on other binary mixture were also remarkable, indicating that cAFA possessed a great potential on selecting or recycling organic matters and their derivatives.
交联淀粉样纤维气凝胶(cAFA)对多种有机污染物具有优异的吸附性能。理论上,这种去除多种污染物的能力导致气凝胶对这些污染物的选择性较低。有趣的是,我们的预实验表明,由于牛血清白蛋白(BSA)和β-乳球蛋白(βLG)制备的气凝胶分别不能富集吩噻嗪和偶氮苯染料,cAFA在可吸附染料上的吸附光谱似乎并不“那么”宽。受刚果红对淀粉样蛋白原纤维染色机制的启发,这些染料对淀粉样蛋白原纤维的特异性作用可能是由于它们与淀粉样蛋白形成核心的结合强度低。因此,气凝胶可以优先吸附高亲和力的染料,而忽略低亲和力的染料。利用气凝胶排斥作用的可能机理,设计了两种混合有机物按一定顺序加入不同气凝胶的回收方法。此外,这两种气凝胶在染料选择性上的分离性能在众多目前报道的研究中处于领先地位。此外,其他二元混合物的对应分离因子也显著,表明cAFA在选择或回收有机质及其衍生物方面具有很大的潜力。
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引用次数: 0
Stepwise activation for preparing narrow microporous coal-derived carbon towards high-performance supercapacitors 用于高性能超级电容器的窄微孔煤衍生炭的逐步活化制备
IF 6.3 2区 材料科学 Q2 CHEMISTRY, PHYSICAL Pub Date : 2026-01-23 DOI: 10.1016/j.surfin.2026.108560
Yan Ye, Xiaoqin Yang, Wanqing Li, Zaixin Wu, Zhihong Qin
Coal is a promising precursor for porous carbon materials owing to its abundant reserves, high carbon content, and cost-effectiveness. This study utilizes hydrothermally pretreated coal-based heavy component (HTHC) as the carbon source and KOH as the activator to synthesize microporous carbons for high-performance supercapacitors. The synthesis employs a two-step temperature-programmed activation process: low-temperature pore pre-construction at 550 °C followed by high-temperature short-term (5 min) etching at 750 °C. The resulting material, designated as HPC-GT5, exhibits a hierarchical pore structure dominated by narrow micropores (0.8 nm). In a three-electrode system, it delivers a specific capacitance of 404.1 F/g at 1 A/g and a rate performance retention of 81.19% at 20 A/g. Symmetric supercapacitor assembled with HPC-GT5 achieves an energy density of 12.85 Wh/kg. Moreover, the device shows no capacitance decay after 10,000 charge-discharge cycles at 10 A/g. The superior electrochemical performance is attributed to the stepwise activation strategy, which imparts HPC-GT5 with efficient charge storage capacity and robust cycle stability.
煤储量丰富、含碳量高、成本效益好,是制备多孔碳材料的理想前驱体。本研究以水热预处理煤基重组分(HTHC)为碳源,以KOH为活化剂合成高性能超级电容器用微孔碳。该合成采用两步控温活化工艺:在550°C下进行低温孔预构建,然后在750°C下进行高温短期(5分钟)蚀刻。所得材料命名为HPC-GT5,表现出以窄微孔(0.8 nm)为主的分层孔结构。在三电极系统中,它在1 a /g时的比电容为404.1 F/g,在20 a /g时的速率性能保持率为81.19%。用HPC-GT5组装的对称超级电容器的能量密度达到12.85 Wh/kg。此外,在10 A/g的条件下,经过10,000次充放电循环后,器件的电容没有衰减。HPC-GT5优异的电化学性能归功于逐步激活策略,该策略使HPC-GT5具有高效的电荷存储能力和强大的循环稳定性。
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引用次数: 0
Modulating S-scheme charge transfer in Ag2Mo2O7/TiO2 nanobelt heterojunctions via interface engineering for enhanced photocatalysis and antimicrobial activity 通过界面工程调节Ag2Mo2O7/TiO2纳米带异质结中S-scheme电荷转移以增强光催化和抗菌活性
IF 6.3 2区 材料科学 Q2 CHEMISTRY, PHYSICAL Pub Date : 2026-01-23 DOI: 10.1016/j.surfin.2026.108586
Jinge Du , Wei Liu , Yuan Su , Mengjia Zhao , Ke Lu , Jianguo Zhou , Yingling Wang , Bijie Jiang , Zhen An
Construction of S-scheme heterojunctions is widely regarded as an effective strategy for enhancing the photocatalytic performance of composite materials. In this study, a series of S-scheme Ag2Mo2O7/TiO2 nanobelt-based photocatalysts were successfully synthesized through an integrated hydrothermal and co-precipitation approach. Photocatalytic degradation experiments demonstrated that the optimized catalyst achieved 100% degradation of oxytetracycline and 85.0% degradation of bisphenol A. Additionally, approximately 1.6 × 107.2 cfu/mL Escherichia coli was inactivated within 60 min. The remarkable enhancement in photocatalytic performance is ascribed to two principal factors: (i) the rough-surface TiO2 nanobelts provided abundant nucleation sites for Ag2Mo2O7 formation, and (ii) the S-scheme heterojunction facilitated efficient separation and transfer of charge carriers. The synergistic effects of the built-in electric field, band bending, and Coulomb interactions facilitated selective recombination of low-energy electrons and holes at the heterojunction interface under simulated sunlight, while preserving high-energy electrons with enhanced reducibility and holes with reinforced oxidative potential, thereby granting the composite with outstanding redox capabilities. The results from X-ray photoelectron spectroscopy (XPS), radical scavenging experiments, electron spin resonance (ESR) analysis, and density functional theory (DFT) simulations collectively confirm that the charge transfer mechanism in the photocatalytic system strictly follows the S-scheme heterojunction conduction pathway. This study provides new fundamental insights into the design and synthesis of S-scheme photocatalysts and offers a promising strategy for practical water purification applications, driving further progress in photocatalytic environmental remediation.
构建s型异质结被广泛认为是提高复合材料光催化性能的有效策略。本研究通过水热共沉淀法成功合成了一系列S-scheme Ag2Mo2O7/TiO2纳米带型光催化剂。光催化降解实验表明,优化后的催化剂对土霉素的降解率为100%,对双酚a的降解率为85.0%。此外,在60 min内,约1.6 × 107.2 cfu/mL的大肠杆菌被灭活。光催化性能的显著提高主要归因于两个因素:(1)表面粗糙的TiO2纳米带为Ag2Mo2O7的形成提供了丰富的成核位点;(2)s型异质结促进了载流子的高效分离和转移。内置电场、能带弯曲和库仑相互作用的协同效应促进了模拟阳光下异质结界面上低能电子和空穴的选择性重组,同时保留了还原性增强的高能电子和氧化势增强的空穴,从而使复合材料具有出色的氧化还原能力。x射线光电子能谱(XPS)、自由基清除实验、电子自旋共振(ESR)分析和密度泛函数理论(DFT)模拟结果共同证实了光催化体系中的电荷转移机制严格遵循s -图式异质结传导途径。该研究为s型光催化剂的设计和合成提供了新的基础见解,并为实际水净化应用提供了有希望的策略,推动了光催化环境修复的进一步发展。
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引用次数: 0
Stability analyses of self-catalyzed planar GaAs nanowire growth on structured surface by Monte Carlo simulation 基于蒙特卡罗模拟的自催化平面砷化镓纳米线生长稳定性分析
IF 6.3 2区 材料科学 Q2 CHEMISTRY, PHYSICAL Pub Date : 2026-01-23 DOI: 10.1016/j.surfin.2026.108584
Snezhana V. Mantsurova , Nataliya L. Shwartz
The conditions for stable unidirectional growth of planar GaAs nanowires on silicon substrates are searched using Monte Carlo simulation. The influence of temperature and trench orientation of the structured surface on the self-catalyzed planar GaAs nanowire growth stability is analyzed. The key factor for the stable planar nanowire growth is not only properly selected growth conditions, but also the direction of the trenches determining the crystal growth orientation. It is shown that the probability of stable planar nanowire growth increases with increasing temperature. The influence of the nanowire crystallization front geometry on the probability of stable growth or switch from the planar to inclined growth is demonstrated for trenches oriented along [2¯11] and [011¯] directions. The optimal trench orientation to increase the stable planar nanowire yield on the structured surface is identified.
采用蒙特卡罗模拟的方法,研究了在硅衬底上稳定生长GaAs纳米线的条件。分析了结构表面温度和沟槽取向对自催化平面砷化镓纳米线生长稳定性的影响。稳定平面纳米线生长的关键因素不仅是选择合适的生长条件,而且是决定晶体生长方向的沟槽方向。结果表明,随着温度的升高,纳米线稳定生长的可能性增大。对于沿[2¯11]和[011¯]方向取向的沟槽,证明了纳米线结晶前沿几何形状对稳定生长或从平面转向倾斜生长的概率的影响。确定了提高结构表面纳米线稳定产率的最佳沟槽方向。
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引用次数: 0
Enhanced interfacial adhesion strength and reduced warpage of copper electrodeposited epoxy composite substrates by annealing treatment 通过退火处理提高了铜电沉积环氧复合基板的界面粘接强度和减少翘曲
IF 6.3 2区 材料科学 Q2 CHEMISTRY, PHYSICAL Pub Date : 2026-01-22 DOI: 10.1016/j.surfin.2026.108573
Shanjun Ding, Man Li, Mengxi Liu, Xiaomeng Wu, Chuan Chen, Qichang An, Zhidan Fang, Qidong Wang
Enhancing interfacial adhesion strength and reducing warpage is critical for developing large size flip-chip ball grid array (FCBGA) substrates in the field of advanced packaging. Copper can affect adhesion strength and warpage of substrates. However, the effect of the annealing process on adhesion strength and warpage has not been focused on so far. Herein, a panel-level FCBGA substrate with four layers and dimensions of 400 mm × 250 mm was fabricated and used to study adhesion properties and warpage. By adjusting the annealing time at 190 °C, the interfacial copper oxide and internal stress of electroplated copper were optimized, thereby improving adhesion strength and reducing warpage. The results showed that when the annealing time increased from 0 h to 6 h, the adhesion strength increased by about 28% and the maximum warpage value decreased by 62.2%. The mechanisms underlying the increased adhesion strength and reduced warpage were explained in detail. This work provides guidance both theoretically and experimentally to enhance adhesion strength and suppress warpage of FCBGA substrates in the future.
在先进封装领域,提高界面粘接强度和减少翘曲是发展大尺寸倒装球栅阵列(FCBGA)基板的关键。铜会影响基材的附着力和翘曲度。然而,退火工艺对粘接强度和翘曲量的影响目前尚未得到研究。本文制备了四层尺寸为400 mm × 250 mm的板级FCBGA衬底,并对其粘附性能和翘曲性能进行了研究。通过调整在190℃下的退火时间,优化了电镀铜的界面氧化铜和内应力,从而提高了附着强度,减少了翘曲。结果表明,当退火时间从0 h增加到6 h时,材料的粘接强度提高了约28%,最大翘曲量降低了62.2%。详细解释了增加粘合强度和减少翘曲的机制。本研究为今后提高FCBGA衬底的粘接强度和抑制翘曲提供了理论和实验指导。
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引用次数: 0
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Surfaces and Interfaces
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