The advancement of information technologies continues to drive innovations in advanced packaging, with bonding techniques progressively evolving toward low-temperature fine-pitch solutions. Micro-cone array (MCA) insertion bonding is an emerging bonding technology under active investigation. However, conventional implementations suffer from interfacial void formation, which limits the reduction in bonding parameters—particularly in attaining lower temperature and pressure. This work innovatively proposes a Cu/CoW/In MCA structure fabricated by electrodepositing a 40-nm CoW barrier layer and a 300-nm indium layer on Cu MCA. The indium layer can eliminate the interfacial voids via molten flow above its melting point (Tm =156.6 °C) or viscoplastic deformation below Tm, coupled with rapid diffusion into the Sn solder. Crucially, the CoW barrier is indispensable for suppressing premature CuIn intermetallic compound (IMC) formation prior to bonding. Optimized bonding parameters—170 °C/750 gf/300 s and 140 °C/1000 gf/300 s—both achieved void-free interfaces with shear strength above 40 MPa, exceeding the solder strength. After aging at 140 °C for 32 h, the interface exhibited progressive formation of Cu6Sn5 IMC with shear strength retention at ∼40 MPa. This work provides a low-temperature, low-pressure, high-quality bonding method for high-density interconnects, demonstrating significant engineering value for advanced packaging applications.
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