This work uses molecular dynamics to investigate the nano-polishing behavior of cubic silicon carbide (3C-SiC) crystals at varying temperatures. The analysis examines materials removal mechanisms, surface morphology evolution, atomic stress distribution and amorphous structure generation across different temperature settings. The findings indicate that temperature is a crucial factor in the polishing process, significantly affecting the subsurface damage layer thickness, the forces involved in nano-polishing, the coordination numbers of atoms, and the profiles of the radial distribution function. Specifically, the polishing depth and surface temperature distribution show distinct patterns depending on the temperature range, with notable variations in atomic displacement and stress distribution. Surface damage is minimized at temperatures below 200 K, and the crystal structure exhibits reduced damage at 200 K and 300 K. At 600 K, the formation of amorphous structures decreases, while polishing forces and stress distributions vary significantly with polishing distance. This work provides an in-depth atomic-scale understanding of the temperature-dependent material removal mechanisms and offers useful insights for improving surface and subsurface quality in ultra-precision machining of 3C-SiC.
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