Current chemical and electrochemical methods lack the nanoscale control required to optimize polymer–metal interfaces for electronic applications. In this work, swift heavy ion (SHI) irradiation is employed to tune the barrier characteristics of Schottky diodes based on polyaniline–graphene nanocomposites (PANI-G NCs) and aluminum. Current density–voltage (J–V) measurements confirmed rectifying behavior in all devices. Key parameters including ideality factor (n), barrier height (Φb), and rectification ratio (γ) were extracted from semi-logarithmic J–V plots. The unirradiated PANI device showed the lowest n (3.8) and the highest γ (98.6). Incorporation of graphene and SHI exposure led to decreased γ and Φb, and increased n, attributed to interfacial inhomogeneities and oxide formation. Differential resistance (dV/dI vs. V) analysis revealed a decline in shunt resistance with fluence, making series resistance (Rs) dominant in charge transport. Cheung’s and Norde’s methods further showed that Rs decreased with fluence, indicating enhanced charge injection. The energy distribution of interface states shifted exponentially toward the valence band edge with increasing bias and dose. At higher voltages, irradiated devices transitioned from trap-limited to trap-free space-charge-limited conduction, suggesting SHI exposure promotes carrier detrapping. These results highlight the tunability of PANI-G SBDs via SHI irradiation and their potential for applications such as Schottky-type photodetectors and low-power rectifying elements in flexible optoelectronic systems.
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