High-efficiency, low-temperature ceramic wafer bonding is essential for heterogeneous semiconductor material integration, multifunctional device packaging, and MEMS technologies. This study systematically compares oxygen (O₂) and argon (Ar) plasma activation for AlN/AlN ceramic wafer bonding, revealing two fundamentally distinct activation mechanisms: (1) O2 plasma induces surface oxidation and chemical activation through bond scission and hydroxyl formation; (2) Ar plasma enhances bonding via physical sputtering, increasing surface reactivity without inducing surface oxidation. Experimental results show that Ar plasma reduces surface roughness and wet contact angle, without oxide formation, and enables >99% bonding area with annealing below 300 °C, meeting the thermal constraints of ceramic packaging in advanced integrated circuit (IC) applications. Detailed characterization via atomic force microscopy (AFM), contact angle measurements, X-ray photoelectron spectroscopy (XPS), and transmission electron microscopy (TEM) elucidates the plasma-induced interfacial modifications. These findings advance the understanding of scalable plasma activation strategies for wide-bandgap ceramic wafer bonding, offering a robust route toward next-generation wafer-level integration.
扫码关注我们
求助内容:
应助结果提醒方式:
