According to Wolf and Richards vectorial diffraction theory, an electric field intensity model of focal spot for high numerical aperture radially polarized beam is established to analyze the intensity distributions of the focal spot and the polarization components of the electric field along the x, y and z axis, separately. In the reflection-mode confocal of imaging system, the intensity distributions of focal spot is obtained utilizing the gold nanoparticles, and the intensity distributions of the polarization components of the electric field along the x, y and z axis are obtained utilizing the gold nanorods. In the incident light, the polarization component along the z axis is nonexistent in front of the objective. But there is the polarization component along the z axis, which is relative to the numerical aperture, in the focal spot behind the objective. When the numerical aperture increases from 0.8 to 1.4, the ratio of the polarization component maximum along the z axis to that along the x axis or y axis increases from 0.57 to 3.16. The results show that the focal spot of radially polarized beam through high numerical aperture objective have the polarization component along the x, y and z axis, separately, and polarization component along z axis is much more than the other.
{"title":"Polarization of focal spot for high numerical aperture radially polarized beam","authors":"Yun Xiao, Yunhai Zhang, Jian Chang, Tongda Wei","doi":"10.1117/12.2182014","DOIUrl":"https://doi.org/10.1117/12.2182014","url":null,"abstract":"According to Wolf and Richards vectorial diffraction theory, an electric field intensity model of focal spot for high numerical aperture radially polarized beam is established to analyze the intensity distributions of the focal spot and the polarization components of the electric field along the x, y and z axis, separately. In the reflection-mode confocal of imaging system, the intensity distributions of focal spot is obtained utilizing the gold nanoparticles, and the intensity distributions of the polarization components of the electric field along the x, y and z axis are obtained utilizing the gold nanorods. In the incident light, the polarization component along the z axis is nonexistent in front of the objective. But there is the polarization component along the z axis, which is relative to the numerical aperture, in the focal spot behind the objective. When the numerical aperture increases from 0.8 to 1.4, the ratio of the polarization component maximum along the z axis to that along the x axis or y axis increases from 0.57 to 3.16. The results show that the focal spot of radially polarized beam through high numerical aperture objective have the polarization component along the x, y and z axis, separately, and polarization component along z axis is much more than the other.","PeriodicalId":225534,"journal":{"name":"Photoelectronic Technology Committee Conferences","volume":"86 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-04-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125420948","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The plume-smoke is one of the main infrared characteristic signal sources of the engine. In this paper, the infrared signal characteristic of a small test engine’s plume-smoke is studied. We conduct a quantitative observation of some specific points in the movement path of the plume-smoke by the MW and LW infrared thermal imager. Through the analysis of the smokeless and smoke infrared sequential images, we can get the infrared radiation and the transmission characteristics of the plume-smoke and their variation law with time. Experiments show that there exists a critical temperature of the plume-smoke; the radiation of background can increase when the temperature of the plume-smoke is higher than the critical temperature. On the contrary, the radiation of background decreases when the temperature of the plume-smoke is lower than the critical temperature. In this paper, the research provides a reference for further study on the infrared characteristic of the plume-smoke.
{"title":"Test and analysis of the infrared characteristic of the plume-smoke","authors":"Xiaolong Zhang, Guang Zhang, Dapeng Chen, Yanbing Dong","doi":"10.1117/12.2178618","DOIUrl":"https://doi.org/10.1117/12.2178618","url":null,"abstract":"The plume-smoke is one of the main infrared characteristic signal sources of the engine. In this paper, the infrared signal characteristic of a small test engine’s plume-smoke is studied. We conduct a quantitative observation of some specific points in the movement path of the plume-smoke by the MW and LW infrared thermal imager. Through the analysis of the smokeless and smoke infrared sequential images, we can get the infrared radiation and the transmission characteristics of the plume-smoke and their variation law with time. Experiments show that there exists a critical temperature of the plume-smoke; the radiation of background can increase when the temperature of the plume-smoke is higher than the critical temperature. On the contrary, the radiation of background decreases when the temperature of the plume-smoke is lower than the critical temperature. In this paper, the research provides a reference for further study on the infrared characteristic of the plume-smoke.","PeriodicalId":225534,"journal":{"name":"Photoelectronic Technology Committee Conferences","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-04-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117324750","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The GaAs photocathode has widely been used in optoelectronic devices such as image intensifiers, photomultiplier tubes, but these devices is inevitable to withstand a variety of mechanical vibration. In order to study the mechanical vibration impact on the photoemission performance of GaAs photocathode, GaAs photocathode image intensifier is researched in this paper. The spectral response of the GaAs photocathode before and after 5~55Hz scan frequency, 14Hz, 33Hz, 52Hz stay frequency, 5～60Hz scan frequency mechanical vibration respectively was tested, then the parameter of photocathode was calculated by MATLAB software according to quantum efficiency formula, the quantum efficiency curve were fitted. The results show that surface escape probability is increased after photocathode is subjected to mechanical vibration, so that its photoemission performance will be improved. We think this phenomenon is due to the GaAs photocathode surface Cs-O reconstruction. This finding provided a new method to enhance the photoemission performance of photocathode.
{"title":"Research on mechanical vibration impacts of GaAs photocathode photoemission performance","authors":"F. Shi, Hongchang Cheng, Xiaofeng Bai, Lei Yan","doi":"10.1117/12.2178699","DOIUrl":"https://doi.org/10.1117/12.2178699","url":null,"abstract":"The GaAs photocathode has widely been used in optoelectronic devices such as image intensifiers, photomultiplier tubes, but these devices is inevitable to withstand a variety of mechanical vibration. In order to study the mechanical vibration impact on the photoemission performance of GaAs photocathode, GaAs photocathode image intensifier is researched in this paper. The spectral response of the GaAs photocathode before and after 5~55Hz scan frequency, 14Hz, 33Hz, 52Hz stay frequency, 5～60Hz scan frequency mechanical vibration respectively was tested, then the parameter of photocathode was calculated by MATLAB software according to quantum efficiency formula, the quantum efficiency curve were fitted. The results show that surface escape probability is increased after photocathode is subjected to mechanical vibration, so that its photoemission performance will be improved. We think this phenomenon is due to the GaAs photocathode surface Cs-O reconstruction. This finding provided a new method to enhance the photoemission performance of photocathode.","PeriodicalId":225534,"journal":{"name":"Photoelectronic Technology Committee Conferences","volume":"56 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-04-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129507764","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A novel data transmission circuit for digital image sensors is presented. Large amounts of data are divided into m groups of n bits each. Each group of data is stored in an n-bit shift register. Under the control of a column scanner, at a time, only one group of data is selected to output serially to a common output line. Thus, as the scanner scans all the groups of data, the large amounts of data are serially output through the common line. A current-mode circuit transforms the output data into a low voltage swing signal which propagates over the common output line fast. A sense amplifier receives the low voltage swing signal and then recovers the full swing signal. Finally, a low-voltage differential signaling ( LVDS ) transmitter, which is fed with the full swing signal, transmits the data out chip. Because there is always only one of the m shift registers operating, the power consumption is greatly reduced. The simulation results show that the proposed circuit works correctly at a date rate of 400Mb/s. For n=14, and m=8, 32, 128, and 256, the power consumption of the prototype is as low as 1/4, 1/15, 1/50, and 1/80 that of the traditional serial link respectively.
{"title":"A novel data transmission circuit for digital image sensors","authors":"Jiqing Zhang, Zhengfen Li, Shengyou Zhong, L. Yao","doi":"10.1117/12.2179999","DOIUrl":"https://doi.org/10.1117/12.2179999","url":null,"abstract":"A novel data transmission circuit for digital image sensors is presented. Large amounts of data are divided into m groups of n bits each. Each group of data is stored in an n-bit shift register. Under the control of a column scanner, at a time, only one group of data is selected to output serially to a common output line. Thus, as the scanner scans all the groups of data, the large amounts of data are serially output through the common line. A current-mode circuit transforms the output data into a low voltage swing signal which propagates over the common output line fast. A sense amplifier receives the low voltage swing signal and then recovers the full swing signal. Finally, a low-voltage differential signaling ( LVDS ) transmitter, which is fed with the full swing signal, transmits the data out chip. Because there is always only one of the m shift registers operating, the power consumption is greatly reduced. The simulation results show that the proposed circuit works correctly at a date rate of 400Mb/s. For n=14, and m=8, 32, 128, and 256, the power consumption of the prototype is as low as 1/4, 1/15, 1/50, and 1/80 that of the traditional serial link respectively.","PeriodicalId":225534,"journal":{"name":"Photoelectronic Technology Committee Conferences","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-04-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127264353","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
There are various saliency detection methods have been proposed recent years. These methods can often complement each other so combining them in appropriate way will be an effective solution of saliency analysis. Existing aggregation methods assigned weights to each entire saliency map, ignoring that features perform differently in certain parts of an image and their gaps between distinguishing the foreground from the backgrounds. In this work, we present a Bayesian probability based framework for multi-feature aggregation. We address saliency detection as a two-class classification problem. Saliency maps generated from each feature have been decomposed into pixels. By the statistic results of different saliency value’s reliability on foreground and background detection, we can generate an accurate, uniform and per-pixel saliency mask without any manual set parameters. This approach can significantly suppress feature’s misclassification while preserve their sensitivity on foreground or background. Experiment on public saliency benchmarks show that our method achieves equal or better results than all state-of-the-art approaches. A new dataset contains 1500 images with human labeled ground truth is also constructed.
{"title":"Probability-based saliency detection approach for multi-features integration","authors":"Jing Pan, Yuqing He, Qishen Zhang, Kun Huang","doi":"10.1117/12.2182163","DOIUrl":"https://doi.org/10.1117/12.2182163","url":null,"abstract":"There are various saliency detection methods have been proposed recent years. These methods can often complement each other so combining them in appropriate way will be an effective solution of saliency analysis. Existing aggregation methods assigned weights to each entire saliency map, ignoring that features perform differently in certain parts of an image and their gaps between distinguishing the foreground from the backgrounds. In this work, we present a Bayesian probability based framework for multi-feature aggregation. We address saliency detection as a two-class classification problem. Saliency maps generated from each feature have been decomposed into pixels. By the statistic results of different saliency value’s reliability on foreground and background detection, we can generate an accurate, uniform and per-pixel saliency mask without any manual set parameters. This approach can significantly suppress feature’s misclassification while preserve their sensitivity on foreground or background. Experiment on public saliency benchmarks show that our method achieves equal or better results than all state-of-the-art approaches. A new dataset contains 1500 images with human labeled ground truth is also constructed.","PeriodicalId":225534,"journal":{"name":"Photoelectronic Technology Committee Conferences","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-04-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126646210","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Caixun Bai, Jianxin Li, Xin Meng, Yan Shen, R. Zhu
The technology of interferometric imaging spectrometer can detect spatial information and spectral information of targets simultaneously. It has been the research hotpot because of its advantages of high throughput, high spectral resolution, high spatial resolution and so on. In order to obtain the spectral images of scene at different distance, a system of interferometric imaging spectrometer is presented, which consists of two imaging lens, a collimating lens, a Sagnac transverse shearing splitter and a detector. Based on the analysis of the optical paths and structure of spectrometer, system parameters of interferometric imaging spectrometer were researched, especially the ones of the transverse shearing splitter, incident plane width, mirror offset, optical parallelism error, and the clear aperture of the imaging lens and collimating lens . Optimal system parameters were given by discussing the relationship of parameters including transverse shearing splitter, detection distance, imaging lens, collimating lens and detector. Experimental prototype is set up to verify the impact of the error of system parameters on the imaging properties.
{"title":"Analysis of system parameters for interferometric imaging spectrometer","authors":"Caixun Bai, Jianxin Li, Xin Meng, Yan Shen, R. Zhu","doi":"10.1117/12.2179847","DOIUrl":"https://doi.org/10.1117/12.2179847","url":null,"abstract":"The technology of interferometric imaging spectrometer can detect spatial information and spectral information of targets simultaneously. It has been the research hotpot because of its advantages of high throughput, high spectral resolution, high spatial resolution and so on. In order to obtain the spectral images of scene at different distance, a system of interferometric imaging spectrometer is presented, which consists of two imaging lens, a collimating lens, a Sagnac transverse shearing splitter and a detector. Based on the analysis of the optical paths and structure of spectrometer, system parameters of interferometric imaging spectrometer were researched, especially the ones of the transverse shearing splitter, incident plane width, mirror offset, optical parallelism error, and the clear aperture of the imaging lens and collimating lens . Optimal system parameters were given by discussing the relationship of parameters including transverse shearing splitter, detection distance, imaging lens, collimating lens and detector. Experimental prototype is set up to verify the impact of the error of system parameters on the imaging properties.","PeriodicalId":225534,"journal":{"name":"Photoelectronic Technology Committee Conferences","volume":"9522 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-04-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129222360","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Xiaoling Zhang, Xin Zhang, J. Tong, Jie Gao, Lijie Jin, Zhaopeng Xu
A series of Zr(1 mol%):Cu(0.1 mol%):Fe(0.03wt%)LiNbO3 single crystals with various Li/Nb ratios having compositions varying between 48.6 and 58 mol% Li2O in the melt were grown by the Czochralski method in the air. The OH− transmittance spectra was investigated to characterize the structure defects of these crystals. The OH− absorption peaks shift to longer wavelength as the [Li]/[Nb] ratio increases and an obvious absorption peak at 3468 cm-1 was observed at the Li/Nb ratio of 1.05. The photorefractive properties of the crystals were experimentally studied using the two-wave coupling method. The results show that as the [Li]/[Nb] ratio increases, the holographic response time and the diffraction efficiency increase under the Li/Nb ratio of 1.2.
{"title":"Growth and photorefractive properties of Zr:Cu:Fe:LiNbO3 crystals with various Li/Nb ratios","authors":"Xiaoling Zhang, Xin Zhang, J. Tong, Jie Gao, Lijie Jin, Zhaopeng Xu","doi":"10.1117/12.2181662","DOIUrl":"https://doi.org/10.1117/12.2181662","url":null,"abstract":"A series of Zr(1 mol%):Cu(0.1 mol%):Fe(0.03wt%)LiNbO3 single crystals with various Li/Nb ratios having compositions varying between 48.6 and 58 mol% Li2O in the melt were grown by the Czochralski method in the air. The OH− transmittance spectra was investigated to characterize the structure defects of these crystals. The OH− absorption peaks shift to longer wavelength as the [Li]/[Nb] ratio increases and an obvious absorption peak at 3468 cm-1 was observed at the Li/Nb ratio of 1.05. The photorefractive properties of the crystals were experimentally studied using the two-wave coupling method. The results show that as the [Li]/[Nb] ratio increases, the holographic response time and the diffraction efficiency increase under the Li/Nb ratio of 1.2.","PeriodicalId":225534,"journal":{"name":"Photoelectronic Technology Committee Conferences","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-04-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129661936","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Z. Miao, F. Shi, Hongchang Cheng, Shu-fei Wang, Xiao-hui Zhang, Yuan Yuan, Chang Chen
In order to know the influence of activation processes on GaAs photocathodes, three GaAs samples were activated by a fixed current of cesium source and different currents of oxygen source. The current of caesium source is same during activation to ensure initial adsorption of caesium quantum is similar, which is the base to show the difference during alternation activation of caesium and oxygen. Analysed with the activation data, it is indicated that Cs-to-O current ratio of 1.07 is the optimum ratio to obtain higher sensitivity and better stability. According to double dipole model, stable and uniform double dipole layers of GaAs-O-Cs:Cs-O-Cs are formed and negative electron affinity is achieved on GaAs surface by activation with cesium and oxygen. The analytical result is just coincident with the model. Thus there is an efficient technological method to improve sensitivity and stability of GaAs photocathode.
为了了解活化过程对GaAs光电阴极的影响，采用固定电流的铯源和不同电流的氧源分别活化了3个GaAs样品。活化过程中铯源电流相同，以保证铯量子的初始吸附相似，这是铯与氧交替活化过程中表现出差异的基础。通过对活化数据的分析，表明cs - o电流比为1.07是获得较高灵敏度和较好稳定性的最佳比值。根据双偶极子模型，在GaAs表面形成了稳定均匀的GaAs- o - cs:Cs-O-Cs双偶极子层，并通过铯和氧的活化在GaAs表面实现了负电子亲和。分析结果与模型吻合较好。从而为提高砷化镓光电阴极的灵敏度和稳定性提供了一种有效的技术手段。
{"title":"Activation processes on GaAs photocathode by different currents of oxygen source","authors":"Z. Miao, F. Shi, Hongchang Cheng, Shu-fei Wang, Xiao-hui Zhang, Yuan Yuan, Chang Chen","doi":"10.1117/12.2178708","DOIUrl":"https://doi.org/10.1117/12.2178708","url":null,"abstract":"In order to know the influence of activation processes on GaAs photocathodes, three GaAs samples were activated by a fixed current of cesium source and different currents of oxygen source. The current of caesium source is same during activation to ensure initial adsorption of caesium quantum is similar, which is the base to show the difference during alternation activation of caesium and oxygen. Analysed with the activation data, it is indicated that Cs-to-O current ratio of 1.07 is the optimum ratio to obtain higher sensitivity and better stability. According to double dipole model, stable and uniform double dipole layers of GaAs-O-Cs:Cs-O-Cs are formed and negative electron affinity is achieved on GaAs surface by activation with cesium and oxygen. The analytical result is just coincident with the model. Thus there is an efficient technological method to improve sensitivity and stability of GaAs photocathode.","PeriodicalId":225534,"journal":{"name":"Photoelectronic Technology Committee Conferences","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-04-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126686084","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
X. Zhang, F. Zhang, Y. Jiang, Y. Y. Wang, Z. Shi, C. Peng
Recently, super-hydrophobicity has attracted increasing attention due to its huge potential in the practical applications. In this paper, we have presented a duo-structure of the combination of micro-dot-matrix and nano-candle-soot. Polydimethylsiloxane (PDMS) was used as a combination layer between the dot-matrix and the soot particles. Firstly, a period of 9-μm dot-matrix was easily fabricated on the K9 glass using the most simple and mature photolithography process. Secondly, the dot-matrix surface was coated by a thin film of PDMS (elastomer: hardener=10:1) which was diluted by methylbenzene at the volume ratio of 1:8. Thirdly, we held the PDMS modified surface over a candle flame to deposit a soot layer and followed by a gentle water-risen to remove the non-adhered particles. At last, the samples were baked at 85℃ for 2 hours and then the duo-structure surface with both micro-size dot-matrix and nano-size soot particles was obtained. The SEM indicated this novel surface morphology was quite like a lotus leaf of the well-know micro-nano-binary structures. As a result, the contact angle meter demonstrated such surface exhibited a perfect super-hydrophobicity with water contact angle of 153° and sliding angle of 3°. Besides, just listed as above, the fabrication process for our structure was quite more easy, smart and low-cost compared with the other production technique for super-hydrophobic surfaces such as the phase separation method, electrochemical deposition and chemical vapor deposition etc. Hence, this super-hydrophobic duo-structure reported in this letter was a great promising candidate for a wide and rapid commercialization in the future.
{"title":"Fabrication of super-hydrophobic duo-structures","authors":"X. Zhang, F. Zhang, Y. Jiang, Y. Y. Wang, Z. Shi, C. Peng","doi":"10.1117/12.2184406","DOIUrl":"https://doi.org/10.1117/12.2184406","url":null,"abstract":"Recently, super-hydrophobicity has attracted increasing attention due to its huge potential in the practical applications. In this paper, we have presented a duo-structure of the combination of micro-dot-matrix and nano-candle-soot. Polydimethylsiloxane (PDMS) was used as a combination layer between the dot-matrix and the soot particles. Firstly, a period of 9-μm dot-matrix was easily fabricated on the K9 glass using the most simple and mature photolithography process. Secondly, the dot-matrix surface was coated by a thin film of PDMS (elastomer: hardener=10:1) which was diluted by methylbenzene at the volume ratio of 1:8. Thirdly, we held the PDMS modified surface over a candle flame to deposit a soot layer and followed by a gentle water-risen to remove the non-adhered particles. At last, the samples were baked at 85℃ for 2 hours and then the duo-structure surface with both micro-size dot-matrix and nano-size soot particles was obtained. The SEM indicated this novel surface morphology was quite like a lotus leaf of the well-know micro-nano-binary structures. As a result, the contact angle meter demonstrated such surface exhibited a perfect super-hydrophobicity with water contact angle of 153° and sliding angle of 3°. Besides, just listed as above, the fabrication process for our structure was quite more easy, smart and low-cost compared with the other production technique for super-hydrophobic surfaces such as the phase separation method, electrochemical deposition and chemical vapor deposition etc. Hence, this super-hydrophobic duo-structure reported in this letter was a great promising candidate for a wide and rapid commercialization in the future.","PeriodicalId":225534,"journal":{"name":"Photoelectronic Technology Committee Conferences","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-04-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134153484","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Haoran Wu, Zhenzhen Dong, Tanglin Wang, Heng Zhao, Junbo Feng, Naidi Cui, J. Teng, Jin Guo
Modeling and characteristic of the SMT Board Plug connector, which is used to connect micro optical transceiver to the main board, are proposed and analyzed in this paper. When the high speed signal transfers from the PCB of transceiver to main board through SMT Board Plug connector, the structure and material discontinuity of the connector causes insertion losses and impedance mismatches. This makes the performance of high speed digital system exacerbated. So it is essential to analyze the signal transfer characteristics of the connector and find out what factors affected the signal quality at the design stage of the digital system. To solve this problem, Ansoft's High Frequency Structure Simulator (HFSS), based on the finite element method, was employed to build accurate 3D models, analyze the effects of various structure parameters, and obtain the full-wave characteristics of the SMT Board Plug connectors in this paper. Then an equivalent circuit model was developed. The circuit parameters were extracted precisely in the frequency range of interests by using the curve fitting method in ADS software, and the result was in good agreement with HFSS simulations up to 8GHz with different structure parameters. At last, the measurement results of S-parameter and eye diagram were given and the S-parameters showed good coincidence between the measurement and HFSS simulation up to 4GHz.
{"title":"Modeling and characteristic of the SMT Board Plug connector in high speed optical communication system","authors":"Haoran Wu, Zhenzhen Dong, Tanglin Wang, Heng Zhao, Junbo Feng, Naidi Cui, J. Teng, Jin Guo","doi":"10.1117/12.2179587","DOIUrl":"https://doi.org/10.1117/12.2179587","url":null,"abstract":"Modeling and characteristic of the SMT Board Plug connector, which is used to connect micro optical transceiver to the main board, are proposed and analyzed in this paper. When the high speed signal transfers from the PCB of transceiver to main board through SMT Board Plug connector, the structure and material discontinuity of the connector causes insertion losses and impedance mismatches. This makes the performance of high speed digital system exacerbated. So it is essential to analyze the signal transfer characteristics of the connector and find out what factors affected the signal quality at the design stage of the digital system. To solve this problem, Ansoft's High Frequency Structure Simulator (HFSS), based on the finite element method, was employed to build accurate 3D models, analyze the effects of various structure parameters, and obtain the full-wave characteristics of the SMT Board Plug connectors in this paper. Then an equivalent circuit model was developed. The circuit parameters were extracted precisely in the frequency range of interests by using the curve fitting method in ADS software, and the result was in good agreement with HFSS simulations up to 8GHz with different structure parameters. At last, the measurement results of S-parameter and eye diagram were given and the S-parameters showed good coincidence between the measurement and HFSS simulation up to 4GHz.","PeriodicalId":225534,"journal":{"name":"Photoelectronic Technology Committee Conferences","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-04-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131121949","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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