Pub Date : 2008-12-02DOI: 10.1109/ISAF.2008.4693830
S. Gebhardt, U. Partsch, A. Schonecker
Al2O3, silicon and low temperature cofired ceramics (LTCC) are key functional materials, forming the substrate basis in microsystems technologies. They allow for three dimensional component integration, high robustness and excellent reliability. The combination of these substrate materials with piezoelectric films offer advanced sensor, actuator and ultrasonic transducer solutions which open up new fields of applications. We developed a PZT thick film paste with excellent dielectric and electromechanical properties. In combination with special electrode and barrier layers a technology was achieved allowing for the development of custom products.
{"title":"PZT thick films for MEMS","authors":"S. Gebhardt, U. Partsch, A. Schonecker","doi":"10.1109/ISAF.2008.4693830","DOIUrl":"https://doi.org/10.1109/ISAF.2008.4693830","url":null,"abstract":"Al2O3, silicon and low temperature cofired ceramics (LTCC) are key functional materials, forming the substrate basis in microsystems technologies. They allow for three dimensional component integration, high robustness and excellent reliability. The combination of these substrate materials with piezoelectric films offer advanced sensor, actuator and ultrasonic transducer solutions which open up new fields of applications. We developed a PZT thick film paste with excellent dielectric and electromechanical properties. In combination with special electrode and barrier layers a technology was achieved allowing for the development of custom products.","PeriodicalId":228914,"journal":{"name":"2008 17th IEEE International Symposium on the Applications of Ferroelectrics","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124261682","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-02DOI: 10.1109/ISAF.2008.4693957
H. Kakemoto, Jianyong Li, T. Hoshina, T. Tsurumi
The frequency variable microwave microscope was developed to evaluate the dielectric permittivity distribution for dielectrics. The dielectric permittivity and dielectric loss for multi-layer ceramics capacitor were estimated from their microwave reflection intensities at the minimum intensity points. The two dimensional dielectric permittivity image for the cross section of multi - layer ceramic capacitor was obtained clearly. The spatial resolution was attained to be about 1¿m experimentally. The measured frequency dependence of dielectric permittivity and dielectric loss for multi - layer ceramics capacitor were accordance with the low frequency dielectric spectra measured by a RF impedance analyzer.
{"title":"Dielectric imaging and its frequency dependence of dielectric device using non-contact state microwave probe","authors":"H. Kakemoto, Jianyong Li, T. Hoshina, T. Tsurumi","doi":"10.1109/ISAF.2008.4693957","DOIUrl":"https://doi.org/10.1109/ISAF.2008.4693957","url":null,"abstract":"The frequency variable microwave microscope was developed to evaluate the dielectric permittivity distribution for dielectrics. The dielectric permittivity and dielectric loss for multi-layer ceramics capacitor were estimated from their microwave reflection intensities at the minimum intensity points. The two dimensional dielectric permittivity image for the cross section of multi - layer ceramic capacitor was obtained clearly. The spatial resolution was attained to be about 1¿m experimentally. The measured frequency dependence of dielectric permittivity and dielectric loss for multi - layer ceramics capacitor were accordance with the low frequency dielectric spectra measured by a RF impedance analyzer.","PeriodicalId":228914,"journal":{"name":"2008 17th IEEE International Symposium on the Applications of Ferroelectrics","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123656690","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-02DOI: 10.1109/ISAF.2008.4693807
T. Chavez, C. Diantonio, M. Winter, M. Rodriguez, P. Yang, G. Burns, A. Blea
The target of this work is to develop an advanced manufacturing process that results in a bulk polycrystalline electroceramic component through a texture induced forming method. The technique produces a bulk ceramic component that exhibits enhanced macroscopic properties when compared to a traditional electroceramic material that has electrically induced ferroelectric texture or crystallographic texture. Templated texturing can involve the ¿laying down¿ of seed crystals with planar morphology to induce preferential grain growth within a pre-designed orientation of the bulk ceramic. Through well-controlled slurry processing of ceramic powders and the addition of templated crystals it is possible to induce this preferential grain orientation for sintered ceramics. This work will present the results of a comparison between three separate advanced ceramic forming techniques; tape casting, thick film screen printing, and extrusion, examining the degree of microstructure texture developed by these methods.
{"title":"Ceramic processing of template-induced microstructure textured ceramics PI008","authors":"T. Chavez, C. Diantonio, M. Winter, M. Rodriguez, P. Yang, G. Burns, A. Blea","doi":"10.1109/ISAF.2008.4693807","DOIUrl":"https://doi.org/10.1109/ISAF.2008.4693807","url":null,"abstract":"The target of this work is to develop an advanced manufacturing process that results in a bulk polycrystalline electroceramic component through a texture induced forming method. The technique produces a bulk ceramic component that exhibits enhanced macroscopic properties when compared to a traditional electroceramic material that has electrically induced ferroelectric texture or crystallographic texture. Templated texturing can involve the ¿laying down¿ of seed crystals with planar morphology to induce preferential grain growth within a pre-designed orientation of the bulk ceramic. Through well-controlled slurry processing of ceramic powders and the addition of templated crystals it is possible to induce this preferential grain orientation for sintered ceramics. This work will present the results of a comparison between three separate advanced ceramic forming techniques; tape casting, thick film screen printing, and extrusion, examining the degree of microstructure texture developed by these methods.","PeriodicalId":228914,"journal":{"name":"2008 17th IEEE International Symposium on the Applications of Ferroelectrics","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117238835","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-02DOI: 10.1109/ISAF.2008.4693755
M. Cole, É. Ngo, S. Hirsch, S. Zhong, S. Alpay
In this work we demonstrate that a compositionally stratified Ba1¿xSrxTiO3 (BST) thin film design (BST60/40-BST75/25-BST90/10) combined with optimized metal-organic solution deposition (MOSD) film fabrication and post-deposition annealing process protocols results in low loss, highly tunable and temperature stable thin film heterostructures. The experimental data demonstrates that the compositionally stratified BST thin film heterostructure has a small-signal dielectric permittivity of 360 with a dissipation factor of 0.012 and a dielectric tunability of 65% at 444 kV/cm. These material properties exhibited minimal dispersion as a function of temperature ranging from 90 to ¿10 °C. Thus, our results suggest that this compositionally stratified material design is an excellent candidate for tunable devices which require both enhanced dielectric response and performance consistency in harsh operational temperature regimes.
{"title":"An enabling material design to promote highly tunable, low loss, performance consistent BST thin films for tunable device applications","authors":"M. Cole, É. Ngo, S. Hirsch, S. Zhong, S. Alpay","doi":"10.1109/ISAF.2008.4693755","DOIUrl":"https://doi.org/10.1109/ISAF.2008.4693755","url":null,"abstract":"In this work we demonstrate that a compositionally stratified Ba1¿xSrxTiO3 (BST) thin film design (BST60/40-BST75/25-BST90/10) combined with optimized metal-organic solution deposition (MOSD) film fabrication and post-deposition annealing process protocols results in low loss, highly tunable and temperature stable thin film heterostructures. The experimental data demonstrates that the compositionally stratified BST thin film heterostructure has a small-signal dielectric permittivity of 360 with a dissipation factor of 0.012 and a dielectric tunability of 65% at 444 kV/cm. These material properties exhibited minimal dispersion as a function of temperature ranging from 90 to ¿10 °C. Thus, our results suggest that this compositionally stratified material design is an excellent candidate for tunable devices which require both enhanced dielectric response and performance consistency in harsh operational temperature regimes.","PeriodicalId":228914,"journal":{"name":"2008 17th IEEE International Symposium on the Applications of Ferroelectrics","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126123294","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-02DOI: 10.1109/ISAF.2008.4693827
M. Zarnik, D. Belavic, S. Macek, M. Kosec
Lead-zirconate-titanate (PZT) thick films on pre-fired low-temperature co-fired ceramic (LTCC) substrates were characterised and tested for the application of a piezoelectric resonant pressure sensor. The experimentally obtained material parameters for the thick-film (TF) PZT were used in a finite-element (FE) model of the sensor, which was realised in a 3D LTCC structure with a flexible diaphragm. The simulations revealed the trends and helped to optimise the design.
{"title":"An application of PZT thick films on LTCC substrates: A case study of a resonant pressure sensor","authors":"M. Zarnik, D. Belavic, S. Macek, M. Kosec","doi":"10.1109/ISAF.2008.4693827","DOIUrl":"https://doi.org/10.1109/ISAF.2008.4693827","url":null,"abstract":"Lead-zirconate-titanate (PZT) thick films on pre-fired low-temperature co-fired ceramic (LTCC) substrates were characterised and tested for the application of a piezoelectric resonant pressure sensor. The experimentally obtained material parameters for the thick-film (TF) PZT were used in a finite-element (FE) model of the sensor, which was realised in a 3D LTCC structure with a flexible diaphragm. The simulations revealed the trends and helped to optimise the design.","PeriodicalId":228914,"journal":{"name":"2008 17th IEEE International Symposium on the Applications of Ferroelectrics","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127338002","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-02DOI: 10.1109/ISAF.2008.4693958
T. Reissman, J. Dietl, E. Garcia
Energy harvesters have gained much attention as renewable energy source applications within wireless sensor technology. Focus has been directed mostly in two realms, maximizing energy output and efficient conversion via energy management circuitry. More analysis is still needed though on the fundamentals of operation in order to optimize for the size and amount of piezoelectric material needed for energy harvester applications. This work extends on the modeling of piezoelectric cantilevers by adding in the geometry of variable cross-sections, exploring standard rectangular designs and configurations with tapers and curvatures. By changing the geometry, a change in the beam strain profile is induced and thus a change in the voltage output. Experimental results are included to show actual performance outputs of each of the designs.
{"title":"Paper ID EH024: Modeling and experimental verification of geometry effects on piezoelectric energy harvesters","authors":"T. Reissman, J. Dietl, E. Garcia","doi":"10.1109/ISAF.2008.4693958","DOIUrl":"https://doi.org/10.1109/ISAF.2008.4693958","url":null,"abstract":"Energy harvesters have gained much attention as renewable energy source applications within wireless sensor technology. Focus has been directed mostly in two realms, maximizing energy output and efficient conversion via energy management circuitry. More analysis is still needed though on the fundamentals of operation in order to optimize for the size and amount of piezoelectric material needed for energy harvester applications. This work extends on the modeling of piezoelectric cantilevers by adding in the geometry of variable cross-sections, exploring standard rectangular designs and configurations with tapers and curvatures. By changing the geometry, a change in the beam strain profile is induced and thus a change in the voltage output. Experimental results are included to show actual performance outputs of each of the designs.","PeriodicalId":228914,"journal":{"name":"2008 17th IEEE International Symposium on the Applications of Ferroelectrics","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130898159","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-02DOI: 10.1109/ISAF.2008.4693725
I. Stolichnov, S. Riester, H. J. Trodahl, N. Setter, A. Rushforth, K. Edmonds, R. Campion, C. T. Foxon, B. Gallagher, Tomas Jungwirth
Integration of ferroelectric gates on magnetic semiconductor structures is a challenging problem because of a number of issues including processing incompatibility between these two groups of materials. High interest in such hybrid multiferroic structures is relating to their potential application in new memories and spintronic logic elements. In the present work we demonstrate a structure in which the magnetic response is modulated by the electric field of the poled ferroelectric gate. Such ferroelectric-ferromagnetic bilayer presents potential benefits of nonvolatile electrical switching, low operation voltage and a possibility to modulate the properties in nanoscale via the polarization domain engineering. Earlier nonvolatile electric-field control of ferromagnetism using a ferroelectric gate has been reported in oxide ferromagnetic layers that do not lend themselves to integration with semiconductors. Device-oriented exploration of such systems requires an implementation combining a thin film ferroelectric gate and a commonly-exploited semiconductor suitable for integration in semiconductor devices. Here we report the first ferroelectric gate device demonstrating nonvolatile electric-field-controlled switching of ferromagnetism in a ferroelectric-dilute magnetic semiconductor (DMS) Ga(Mn)As. Specifically, we show that polarization reversal of the gate by a single voltage pulse results in a persistent modulation of the Curie temperature as large as 5%. Such electric-field-driven control of ferromagnetism relies on the mediation of the Mn-Mn exchange interaction by the strongly spin-orbit coupled valence band holes which control both the strength of the magnetic interactions and the magnetocrystalline anisotropies. The Curie temperature TC can thus be a significant function of the hole density p, offering the potential for altering the ferromagnetic response by electric-field control. In a conventional FET system first reported by Ohno et al. control of ferromagnetism requires the application of a large gate voltage and is not persistent. In contrast a ferroelectric gate offers the potential for the large nonvolatile carrier-density control needed in these heavily doped materials, by modest voltages (potentially can be less than 5 V in ultra-thin ferroelectric films). Ferroelectric gates can offer sub-nanosecond response times, and possibility of direct domain writing for reversible modulation of the magnetic properties in submicron scale.
{"title":"Ferroelectric control of ferromagnetism in diluted magnetic semiconductors","authors":"I. Stolichnov, S. Riester, H. J. Trodahl, N. Setter, A. Rushforth, K. Edmonds, R. Campion, C. T. Foxon, B. Gallagher, Tomas Jungwirth","doi":"10.1109/ISAF.2008.4693725","DOIUrl":"https://doi.org/10.1109/ISAF.2008.4693725","url":null,"abstract":"Integration of ferroelectric gates on magnetic semiconductor structures is a challenging problem because of a number of issues including processing incompatibility between these two groups of materials. High interest in such hybrid multiferroic structures is relating to their potential application in new memories and spintronic logic elements. In the present work we demonstrate a structure in which the magnetic response is modulated by the electric field of the poled ferroelectric gate. Such ferroelectric-ferromagnetic bilayer presents potential benefits of nonvolatile electrical switching, low operation voltage and a possibility to modulate the properties in nanoscale via the polarization domain engineering. Earlier nonvolatile electric-field control of ferromagnetism using a ferroelectric gate has been reported in oxide ferromagnetic layers that do not lend themselves to integration with semiconductors. Device-oriented exploration of such systems requires an implementation combining a thin film ferroelectric gate and a commonly-exploited semiconductor suitable for integration in semiconductor devices. Here we report the first ferroelectric gate device demonstrating nonvolatile electric-field-controlled switching of ferromagnetism in a ferroelectric-dilute magnetic semiconductor (DMS) Ga(Mn)As. Specifically, we show that polarization reversal of the gate by a single voltage pulse results in a persistent modulation of the Curie temperature as large as 5%. Such electric-field-driven control of ferromagnetism relies on the mediation of the Mn-Mn exchange interaction by the strongly spin-orbit coupled valence band holes which control both the strength of the magnetic interactions and the magnetocrystalline anisotropies. The Curie temperature TC can thus be a significant function of the hole density p, offering the potential for altering the ferromagnetic response by electric-field control. In a conventional FET system first reported by Ohno et al. control of ferromagnetism requires the application of a large gate voltage and is not persistent. In contrast a ferroelectric gate offers the potential for the large nonvolatile carrier-density control needed in these heavily doped materials, by modest voltages (potentially can be less than 5 V in ultra-thin ferroelectric films). Ferroelectric gates can offer sub-nanosecond response times, and possibility of direct domain writing for reversible modulation of the magnetic properties in submicron scale.","PeriodicalId":228914,"journal":{"name":"2008 17th IEEE International Symposium on the Applications of Ferroelectrics","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130969192","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-02DOI: 10.1109/ISAF.2008.4693798
J. Wang, J. Kwon, J. Yoon, H. Wang, T. Haugan, F. Baca, N. Pierce, P. Barnes
In this paper, we report a strong correlation between the stacking fault (SF) density and the critical current density of YBa2Cu3O7¿¿ (YBCO) thin films in applied field (Jcin-field). We found that the Jcin-field increases as the deposition temperature increases (775°C ¿ 825°C) for the samples grown on both SrTiO3 (STO) and LaAlO3 substrates. An interesting linear relation is observed between the SF density and the Jcin-field value, which suggests that the YBCO SF density plays an important role in the YBCO in-field transport performance.
{"title":"NA008 Deposition temperature dependence of YBCO transport properties","authors":"J. Wang, J. Kwon, J. Yoon, H. Wang, T. Haugan, F. Baca, N. Pierce, P. Barnes","doi":"10.1109/ISAF.2008.4693798","DOIUrl":"https://doi.org/10.1109/ISAF.2008.4693798","url":null,"abstract":"In this paper, we report a strong correlation between the stacking fault (SF) density and the critical current density of YBa2Cu3O7¿¿ (YBCO) thin films in applied field (Jcin-field). We found that the Jcin-field increases as the deposition temperature increases (775°C ¿ 825°C) for the samples grown on both SrTiO3 (STO) and LaAlO3 substrates. An interesting linear relation is observed between the SF density and the Jcin-field value, which suggests that the YBCO SF density plays an important role in the YBCO in-field transport performance.","PeriodicalId":228914,"journal":{"name":"2008 17th IEEE International Symposium on the Applications of Ferroelectrics","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130251249","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-02DOI: 10.1109/ISAF.2008.4693861
K. Kato, Kiyotaka Tanaka, S. Kayukawa, Kazuyuki Suzuki
BaTiO3 films were fabricated on Si by using Ba-Ti double alkoxide solutions. The crystallinity and crystallographic orientation were controlled by inserting LaNiO3 and Pt layers between the ferroelectric and substrates. The microstructure depended on the concentration of the precursor solutions and the thickness of single deposition layer. The phase transition was electrically investigated in (100) oriented BaTiO3 thin and thick films. Changes of the dielectric constant as a function of temperature in the range of ¿200°C to 200°C indicate that the transition from paraelectric to ferroelectric phase takes place around at 100°C instead of 130°C for single crystals. The broad peak of the dielectric constant shifted to lower temperatures and the behavior was associated with the crystallinity, orientation degree and microstructure of the films. A highly (100)-oriented columnar BaTiO3 thin film with thickness of 280 nm exhibited two transitions at 0°C and 100°C due to orthorhombic to tetragonal and tetragonal to cubic, respectively. While the 1¿m-thick BaTiO3 film with a combined structure consisted of columnar and granular grains showed a transition at 105°C. PFM measurements at room temperature revealed that the bottom-up BaTiO3 films were ferroelectric and the thinner films with thickness less than 280 nm were significantly stressed. Finally, the potential application to the micro-electromechanical system will be hopefully presented.
{"title":"Structure and electrical characteristics of bottom-up BaTiO3 films on Si","authors":"K. Kato, Kiyotaka Tanaka, S. Kayukawa, Kazuyuki Suzuki","doi":"10.1109/ISAF.2008.4693861","DOIUrl":"https://doi.org/10.1109/ISAF.2008.4693861","url":null,"abstract":"BaTiO3 films were fabricated on Si by using Ba-Ti double alkoxide solutions. The crystallinity and crystallographic orientation were controlled by inserting LaNiO3 and Pt layers between the ferroelectric and substrates. The microstructure depended on the concentration of the precursor solutions and the thickness of single deposition layer. The phase transition was electrically investigated in (100) oriented BaTiO3 thin and thick films. Changes of the dielectric constant as a function of temperature in the range of ¿200°C to 200°C indicate that the transition from paraelectric to ferroelectric phase takes place around at 100°C instead of 130°C for single crystals. The broad peak of the dielectric constant shifted to lower temperatures and the behavior was associated with the crystallinity, orientation degree and microstructure of the films. A highly (100)-oriented columnar BaTiO3 thin film with thickness of 280 nm exhibited two transitions at 0°C and 100°C due to orthorhombic to tetragonal and tetragonal to cubic, respectively. While the 1¿m-thick BaTiO3 film with a combined structure consisted of columnar and granular grains showed a transition at 105°C. PFM measurements at room temperature revealed that the bottom-up BaTiO3 films were ferroelectric and the thinner films with thickness less than 280 nm were significantly stressed. Finally, the potential application to the micro-electromechanical system will be hopefully presented.","PeriodicalId":228914,"journal":{"name":"2008 17th IEEE International Symposium on the Applications of Ferroelectrics","volume":"58 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130455582","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-02DOI: 10.1109/ISAF.2008.4693860
T. Schneller
Nanoscopic ferroelectrics continue to be of great interest due to their possible integration into miniaturized electronic devices. For research tasks as well as for microelectronic production lines chemical deposition methods show thereby distinct advantages. This paper shortly reviews the chemical solution deposition (CSD) based approaches to fabricate ferroelectric nanograins. Compared to the often applied subtractive methods based on lithography and etching or focused ion beam (FIB) this method avoids damaging the prepared ferroelectric nanostructures. The precursor based methods are complemented by microemulsion mediated approaches for the deposition of ferroelectric nanoislands as well as for films.
{"title":"Freestanding and embedded ferroelectric nanograins by advanced chemical solution deposition methods","authors":"T. Schneller","doi":"10.1109/ISAF.2008.4693860","DOIUrl":"https://doi.org/10.1109/ISAF.2008.4693860","url":null,"abstract":"Nanoscopic ferroelectrics continue to be of great interest due to their possible integration into miniaturized electronic devices. For research tasks as well as for microelectronic production lines chemical deposition methods show thereby distinct advantages. This paper shortly reviews the chemical solution deposition (CSD) based approaches to fabricate ferroelectric nanograins. Compared to the often applied subtractive methods based on lithography and etching or focused ion beam (FIB) this method avoids damaging the prepared ferroelectric nanostructures. The precursor based methods are complemented by microemulsion mediated approaches for the deposition of ferroelectric nanoislands as well as for films.","PeriodicalId":228914,"journal":{"name":"2008 17th IEEE International Symposium on the Applications of Ferroelectrics","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127969557","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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