Pub Date : 1900-01-01DOI: 10.15222/tkea2021.5-6.26
Yulia Yamnenko, V. O. Osokin
The article compares the accuracy of mobile robot positioning by the technique based on genetic algorithms, which are related to artificial intelligence, and by the trilateration technique. The authors consider the application of appropriate terminology borrowed from genetics and data processing algorithms for this technical problem. When using the genetic algorithm, the coordinates of the robot are found using angular methods or rigid logic methods, which are not particularly effective because of the large amount of data that is not needed for positioning, so there is a need to select the most likely indicators to find the best route to the target. The genetic algorithm used in this study first selects the data by a certain criterion to enter the first population, and then the data falls into the beginning of the genetic algorithm. Each individual has chromosomes that represent a sequence of data, i.e., genes. After a chromosome is coded, the following genetic operations are performed: crossing over and mutation. These operations occur cyclically until a population with high fitness is found. The solution is a sequence of selected coordinates, from which a system is constructed to determine the optimal route to the destination. The robot navigation techniques are compared in terms of coordinate positioning accuracy. Calculation results on dispersion and absolute positioning error show that the positioning using genetic algorithm gives less error than the one using trilateration method. The genetic algorithm allows finding the optimal solution of the positioning problem while reducing a significant influence of the measurement error of sensors and other measuring devices on the result.
{"title":"Comparison of mobile robot positioning techniques","authors":"Yulia Yamnenko, V. O. Osokin","doi":"10.15222/tkea2021.5-6.26","DOIUrl":"https://doi.org/10.15222/tkea2021.5-6.26","url":null,"abstract":"The article compares the accuracy of mobile robot positioning by the technique based on genetic algorithms, which are related to artificial intelligence, and by the trilateration technique. The authors consider the application of appropriate terminology borrowed from genetics and data processing algorithms for this technical problem. When using the genetic algorithm, the coordinates of the robot are found using angular methods or rigid logic methods, which are not particularly effective because of the large amount of data that is not needed for positioning, so there is a need to select the most likely indicators to find the best route to the target. \u0000The genetic algorithm used in this study first selects the data by a certain criterion to enter the first population, and then the data falls into the beginning of the genetic algorithm. Each individual has chromosomes that represent a sequence of data, i.e., genes. After a chromosome is coded, the following genetic operations are performed: crossing over and mutation. These operations occur cyclically until a population with high fitness is found. The solution is a sequence of selected coordinates, from which a system is constructed to determine the optimal route to the destination. \u0000The robot navigation techniques are compared in terms of coordinate positioning accuracy. Calculation results on dispersion and absolute positioning error show that the positioning using genetic algorithm gives less error than the one using trilateration method. The genetic algorithm allows finding the optimal solution of the positioning problem while reducing a significant influence of the measurement error of sensors and other measuring devices on the result.","PeriodicalId":231412,"journal":{"name":"Технология и конструирование в электронной аппаратуре","volume":"87 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115790009","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.15222/TKEA2019.3-4.03
A. Druzhinin, Y. Khoverko, I. Ostrovskii, N. Liakh-Kaguy, O. A. Pasynkova
The authors investigate deformation-induced changes in the electrophysical parameters of the indium antimonide microcrystals at cryogenic temperatures in strong magnetic fields up to 10 T. It is determined that for strongly doped InSb microcrystals, the gauge factor at liquid-helium temperature is GF4.2K ≈ 72 for the charge carrier concentration of 2∙1017 сm–3, while being GF4.2K ≈ 47 for the concentration of 6∙1017 сm–3, at ε = –3∙10–4 rel. un. For the development of magnetic field sensors based on the magnetoresistive principle, the effect of a giant magnetic resistivity reaching 720% at a temperature of 4.2 K is used.
{"title":"Deformation-induced effects in indium antimonide microstructures at cryogenic temperatures for sensor applications","authors":"A. Druzhinin, Y. Khoverko, I. Ostrovskii, N. Liakh-Kaguy, O. A. Pasynkova","doi":"10.15222/TKEA2019.3-4.03","DOIUrl":"https://doi.org/10.15222/TKEA2019.3-4.03","url":null,"abstract":"The authors investigate deformation-induced changes in the electrophysical parameters of the indium antimonide microcrystals at cryogenic temperatures in strong magnetic fields up to 10 T. It is determined that for strongly doped InSb microcrystals, the gauge factor at liquid-helium temperature is GF4.2K ≈ 72 for the charge carrier concentration of 2∙1017 сm–3, while being GF4.2K ≈ 47 for the concentration of 6∙1017 сm–3, at ε = –3∙10–4 rel. un. For the development of magnetic field sensors based on the magnetoresistive principle, the effect of a giant magnetic resistivity reaching 720% at a temperature of 4.2 K is used.","PeriodicalId":231412,"journal":{"name":"Технология и конструирование в электронной аппаратуре","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126124645","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.15222/tkea2021.1-2.33
T. Kovaliuk, M. Solovan, P. Maryanchuk
Due to the physical properties of MoN and ITO thin films, it was decided to create MoN/p-CdTe and MoN/n-CdTe heterostructures and investigate their electrical and photoelectric properties. The method of reactive magnetron sputtering was used to create thin MoN and ITO films on single crystal CdTe substrates with different conductivity types. To manufacture test heterostructures, the following CdTe crystal substrates were used: 1) p-type conductivity, grown by Bridgman technique at low cadmium vapor pressures; 2) n-type conductivity, grown by Bridgman technique at high cadmium vapor pressures. During the deposition process, the argon pressure in the vacuum chamber was 0.4 Pa. The power of the magnetron was 30 W, the sputtering process continued 5 min at a substrate temperature of 150°C. I-V characteristics of the heterostructures at different temperatures were measured, the height of the potential barrier, the values of the series and shunt resistance were determined. Electrical and photoelectric properties of the heterostructures were studied, and the dominant mechanisms of current transfer at forward displacements was established. The tunnel-recombination mechanism was found to be the dominant mechanism of current transfer in the MoN/p-CdTe and MoN/n-CdTe heterostructures. It was shown that the photoelectric parameters for the MoN/p-CdTe heterostructure are higher than those for MoN/n-CdTe. MoN/p-CdTe heterojunctions have the following photoelectric parameters: open-circuit voltage Voc = 0.4 V, short-circuit current Isc = 24.6 mA/cm2 at an illumination intensity of 80 mW/cm2. This makes them a promising material for the manufacture of detectors of various radiation types.
{"title":"Electrical and photoelectric properties of MoN/p-CdTe and MoN/n-CdTe heterojunctions","authors":"T. Kovaliuk, M. Solovan, P. Maryanchuk","doi":"10.15222/tkea2021.1-2.33","DOIUrl":"https://doi.org/10.15222/tkea2021.1-2.33","url":null,"abstract":"Due to the physical properties of MoN and ITO thin films, it was decided to create MoN/p-CdTe and MoN/n-CdTe heterostructures and investigate their electrical and photoelectric properties. The method of reactive magnetron sputtering was used to create thin MoN and ITO films on single crystal CdTe substrates with different conductivity types. To manufacture test heterostructures, the following CdTe crystal substrates were used: 1) p-type conductivity, grown by Bridgman technique at low cadmium vapor pressures; 2) n-type conductivity, grown by Bridgman technique at high cadmium vapor pressures. During the deposition process, the argon pressure in the vacuum chamber was 0.4 Pa. The power of the magnetron was 30 W, the sputtering process continued 5 min at a substrate temperature of 150°C. I-V characteristics of the heterostructures at different temperatures were measured, the height of the potential barrier, the values of the series and shunt resistance were determined. \u0000Electrical and photoelectric properties of the heterostructures were studied, and the dominant mechanisms of current transfer at forward displacements was established. The tunnel-recombination mechanism was found to be the dominant mechanism of current transfer in the MoN/p-CdTe and MoN/n-CdTe heterostructures.\u0000It was shown that the photoelectric parameters for the MoN/p-CdTe heterostructure are higher than those for MoN/n-CdTe. MoN/p-CdTe heterojunctions have the following photoelectric parameters: open-circuit voltage Voc = 0.4 V, short-circuit current Isc = 24.6 mA/cm2 at an illumination intensity of 80 mW/cm2. This makes them a promising material for the manufacture of detectors of various radiation types.","PeriodicalId":231412,"journal":{"name":"Технология и конструирование в электронной аппаратуре","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122887901","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.15222/tkea2020.3-4.17
A. Fedorenko
Laser rangefinders are widely used to measure distances for various civil and military purposes, as well as in rocket and space technology. The optical channel of such rangefinders uses high-speed p–i–n, or avalanche, photodiodes based on Si, Ge or InGaAs depending on the operating wavelength of the rangefinder in question. The paper describes a manufacturing process for high-speed Ge-p–i–n photodiodes for laser rangefinders using the diffusion method. The passivation layer is made of ZnSe, which is a new solution for this type of photodiodes. The existing theoretical models are used to study the spectral ampere-watt sensitivity of the diodes at various values of the active region parameters, and the simulation results reliability is evaluated by the respective measurements. It is shown that the obtained theoretical dependence well agrees with the measurement data. Moreover, the authors for the first time study the spectral photosensitivity of the Ge-p–i–n photodiode with a coated silicon filter covering the range λ = 1.4—1.6 μm. The spectral sensitivity range for the diodes is determined to be λ = 1.1—1.7 μm. The maximum photosensitivity of 0.42 A/W is achieved at a wavelength of λ = 1.54 μm. The authors argue that Ge-p–i–n photodiodes with a silicon filter are resistant to the “blinding” laser radiation with λ = 1.064 μm. The calculated data on the spectral photosensitivity of the photodiode with a filter also well agree with the experiment. Thus, the chosen simulation technique allows taking into account most design and technological characteristics of the photodiodes during theoretical simulation, which makes it possible to accurately predict and optimize their parameters for a specific practical task and improve the manufacturing process of the photodiodes.
{"title":"Spectral photosensitivity of diffused Ge-p–i–n photodiods","authors":"A. Fedorenko","doi":"10.15222/tkea2020.3-4.17","DOIUrl":"https://doi.org/10.15222/tkea2020.3-4.17","url":null,"abstract":"Laser rangefinders are widely used to measure distances for various civil and military purposes, as well as in rocket and space technology. The optical channel of such rangefinders uses high-speed p–i–n, or avalanche, photodiodes based on Si, Ge or InGaAs depending on the operating wavelength of the rangefinder in question.\u0000The paper describes a manufacturing process for high-speed Ge-p–i–n photodiodes for laser rangefinders using the diffusion method. The passivation layer is made of ZnSe, which is a new solution for this type of photodiodes. The existing theoretical models are used to study the spectral ampere-watt sensitivity of the diodes at various values of the active region parameters, and the simulation results reliability is evaluated by the respective measurements. It is shown that the obtained theoretical dependence well agrees with the measurement data.\u0000Moreover, the authors for the first time study the spectral photosensitivity of the Ge-p–i–n photodiode with a coated silicon filter covering the range λ = 1.4—1.6 μm. The spectral sensitivity range for the diodes is determined to be λ = 1.1—1.7 μm. The maximum photosensitivity of 0.42 A/W is achieved at a wavelength of λ = 1.54 μm. The authors argue that Ge-p–i–n photodiodes with a silicon filter are resistant to the “blinding” laser radiation with λ = 1.064 μm. The calculated data on the spectral photosensitivity of the photodiode with a filter also well agree with the experiment.\u0000Thus, the chosen simulation technique allows taking into account most design and technological characteristics of the photodiodes during theoretical simulation, which makes it possible to accurately predict and optimize their parameters for a specific practical task and improve the manufacturing process of the photodiodes.","PeriodicalId":231412,"journal":{"name":"Технология и конструирование в электронной аппаратуре","volume":"94 ","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134005884","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.15222/tkea2019.1-2.10
A. N. Tynynyka
The article is devoted to the methods and rules of electronic design of radio electronic devices, which provide high stability and electromagnetic compatibility. The author considers how interferences may be caused by the unsuccessful design decisions when constructing discrete-analog channels of information conversion. The paper gives practical recommendations for choosing appropriate element base, grounding and power sources. The urgency of these tasks is caused by the requirements for increasing the speed of semiconductor devices and electronic circuits in general and reducing the amplitude of the working signals of digital devices, as well as by the problems of increasing the impact of interconnections and the assembly of nodes on the stability and speed of electronic devices and systems, by the problems of reducing the production complexity, material and time consumption, and of finding and eliminating the causes of low noise immunity of electronic devices. With the growth of the speed and layout density of the elements, ensuring the immunity of the electromagnetic interaction between different devices and systems becomes the most important task in construing the radio electronic systems in general. When designing any electronic circuit, one should inevitably allow for addi¬tional parasitic parameters of resistive, inductive and capacitive nature, which may unacceptably impair the performance and noise immunity of the actual design, or even lead to complete loss of functionality. Design and installation have a particular effect on the work of super-high-speed (high frequency) circuits and de¬vices – here the provision of system speed, noise immunity and electromagnetic compatibility become the main criteria for the quality of electronic design. The analysis of the special characteristics of the element base and of the experience of designing power sources and grounding, should help the developers of the electronic devices to reduce the noise in the shaped channels of high-speed data processing
{"title":"Design methods for reducing noise and interferences in channels with lumped parameters in high-speed data processing","authors":"A. N. Tynynyka","doi":"10.15222/tkea2019.1-2.10","DOIUrl":"https://doi.org/10.15222/tkea2019.1-2.10","url":null,"abstract":"The article is devoted to the methods and rules of electronic design of radio electronic devices, which provide high stability and electromagnetic compatibility. The author considers how interferences may be caused by the unsuccessful design decisions when constructing discrete-analog channels of information conversion. The paper gives practical recommendations for choosing appropriate element base, grounding and power sources. The urgency of these tasks is caused by the requirements for increasing the speed of semiconductor devices and electronic circuits in general and reducing the amplitude of the working signals of digital devices, as well as by the problems of increasing the impact of interconnections and the assembly of nodes on the stability and speed of electronic devices and systems, by the problems of reducing the production complexity, material and time consumption, and of finding and eliminating the causes of low noise immunity of electronic devices. \u0000With the growth of the speed and layout density of the elements, ensuring the immunity of the electromagnetic interaction between different devices and systems becomes the most important task in construing the radio electronic systems in general. When designing any electronic circuit, one should inevitably allow for addi¬tional parasitic parameters of resistive, inductive and capacitive nature, which may unacceptably impair the performance and noise immunity of the actual design, or even lead to complete loss of functionality. Design and installation have a particular effect on the work of super-high-speed (high frequency) circuits and de¬vices – here the provision of system speed, noise immunity and electromagnetic compatibility become the main criteria for the quality of electronic design. \u0000The analysis of the special characteristics of the element base and of the experience of designing power sources and grounding, should help the developers of the electronic devices to reduce the noise in the shaped channels of high-speed data processing","PeriodicalId":231412,"journal":{"name":"Технология и конструирование в электронной аппаратуре","volume":"104 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125678448","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.15222/tkea2021.5-6.20
V. Chmil
The paper presents an analysis of existing methods of controlling the efficiency of multipart radio engineering systems and their individual components. The authors consider the situations when traditional methods do not allow controlling the efficiency of the system in operational mode. The study substantiates the practicability and possibility of estimating the efficiency of microwave channels for receiving telemetry information from artificial space objects according to indirect criteria. The principle of forming a list of indirect control criteria is demonstrated on the example of the functional diagram of the radio receiver system of the RT-32 C, X, K radio telescope. The study formulates the principles of creating a system designed to control the parameters of the information channel of such a microwave radio receiver system by controlling indirect parameters which correspond to the chosen criteria and the list of the basic parameters. A list of indirect parameters affecting the performance of the entire system by controlling the characteristics of its main parameters has been created. The paper carefully considers the problems that arise when equipping the radio receiver system with built-in tools for controlling and managing the indirect parameters. A system of nominal equations is designed for estimating the state of the basic parameters of the components of the radio receiver system. Each of the indirect parameters is codified in digital form. An example of a block diagram of a distributed control and management system for complex radio devices is presented. The authors determine acceptable deviations for the indirect parameters relative to the nominal values of the direct parameters for controlling the state of both individual devices and the whole multipart system. It is proposed to implement a control and management system of a complex system by using a specialized controller-based circuit board built into each functional device of the radio receiver system. One possible version of such board, its design and all functional units are considered in detail. The proposed methods of controlling and managing the state of a multipart radio-technical system when receiving telemetric information directly in the working mode has been successfully approved during a series of radio astronomical studies on RT-32 C, X, K radio telescope at the Space Researches and Communications Center of the State Space Agency of Ukraine.
{"title":"Monitoring the efficiency of microwave channels for receiving telemetry information using indirect parameters","authors":"V. Chmil","doi":"10.15222/tkea2021.5-6.20","DOIUrl":"https://doi.org/10.15222/tkea2021.5-6.20","url":null,"abstract":"The paper presents an analysis of existing methods of controlling the efficiency of multipart radio engineering systems and their individual components. The authors consider the situations when traditional methods do not allow controlling the efficiency of the system in operational mode. The study substantiates the practicability and possibility of estimating the efficiency of microwave channels for receiving telemetry information from artificial space objects according to indirect criteria.\u0000The principle of forming a list of indirect control criteria is demonstrated on the example of the functional diagram of the radio receiver system of the RT-32 C, X, K radio telescope. The study formulates the principles of creating a system designed to control the parameters of the information channel of such a microwave radio receiver system by controlling indirect parameters which correspond to the chosen criteria and the list of the basic parameters. A list of indirect parameters affecting the performance of the entire system by controlling the characteristics of its main parameters has been created. The paper carefully considers the problems that arise when equipping the radio receiver system with built-in tools for controlling and managing the indirect parameters. A system of nominal equations is designed for estimating the state of the basic parameters of the components of the radio receiver system. Each of the indirect parameters is codified in digital form. An example of a block diagram of a distributed control and management system for complex radio devices is presented.\u0000The authors determine acceptable deviations for the indirect parameters relative to the nominal values of the direct parameters for controlling the state of both individual devices and the whole multipart system. It is proposed to implement a control and management system of a complex system by using a specialized controller-based circuit board built into each functional device of the radio receiver system. One possible version of such board, its design and all functional units are considered in detail.\u0000The proposed methods of controlling and managing the state of a multipart radio-technical system when receiving telemetric information directly in the working mode has been successfully approved during a series of radio astronomical studies on RT-32 C, X, K radio telescope at the Space Researches and Communications Center of the State Space Agency of Ukraine.","PeriodicalId":231412,"journal":{"name":"Технология и конструирование в электронной аппаратуре","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133171210","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.15222/tkea2019.3-4.10
A. N. Tynynyka
When designing most electronic systems, the main focus is on the development of the devices themselves, while the problem of meeting the requirements for the interference protection usually take second place, which calls for a need in this particular study. The article is devoted to methods and rules for design of radio electronic devices, which reduce noise and interference. The author provides practical guidance in the issues of choosing components, installing cables and connectors, designing print nodes and interference filtering. The urgency of these tasks is caused by several principal reasons, i.e., the increase of the speed of semiconductor devices and electronic circuits in general, reducing the amplitudes of the working signals of digital devices, increasing effect of interconnects and cascade layouts on the stability and speed of electronic devices and systems, the complex, costly and time consuming process of finding and eliminating the causes of low noise immunity of electronic devices. With the speed growth and the layout density of the elements, ensuring the noise immunity of the electromagnetic interaction between different devices and systems becomes the most important task of designing the radio electronic systems in general. When designing any electronic circuit, additional resistive, inductive and capacitive parasitic parameters are inevitably introduced. This can critically affect the performance of the real-life design by lowering its speed and noise immunity, even leading to complete failure. Design and installation have a particularly strong influence on the operation of high-speed (high-frequency) circuits and devices. In such cases, system speed, noise immunity and electromagnetic compatibility become the main criteria for the quality of electronic design.
{"title":"Reduction of noise and interference by rational selection of electronic components in lumped parameter channels at high speed data processing","authors":"A. N. Tynynyka","doi":"10.15222/tkea2019.3-4.10","DOIUrl":"https://doi.org/10.15222/tkea2019.3-4.10","url":null,"abstract":"When designing most electronic systems, the main focus is on the development of the devices themselves, while the problem of meeting the requirements for the interference protection usually take second place, which calls for a need in this particular study. \u0000The article is devoted to methods and rules for design of radio electronic devices, which reduce noise and interference. The author provides practical guidance in the issues of choosing components, installing cables and connectors, designing print nodes and interference filtering. The urgency of these tasks is caused by several principal reasons, i.e., the increase of the speed of semiconductor devices and electronic circuits in general, reducing the amplitudes of the working signals of digital devices, increasing effect of interconnects and cascade layouts on the stability and speed of electronic devices and systems, the complex, costly and time consuming process of finding and eliminating the causes of low noise immunity of electronic devices. \u0000With the speed growth and the layout density of the elements, ensuring the noise immunity of the electromagnetic interaction between different devices and systems becomes the most important task of designing the radio electronic systems in general. When designing any electronic circuit, additional resistive, inductive and capacitive parasitic parameters are inevitably introduced. This can critically affect the performance of the real-life design by lowering its speed and noise immunity, even leading to complete failure. Design and installation have a particularly strong influence on the operation of high-speed (high-frequency) circuits and devices. In such cases, system speed, noise immunity and electromagnetic compatibility become the main criteria for the quality of electronic design.","PeriodicalId":231412,"journal":{"name":"Технология и конструирование в электронной аппаратуре","volume":"61 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131313996","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.15222/tkea2020.3-4.35
D. Pekur, V. Sorokin, Yu. E. Nikolaenko
LED light sources, and powerful multichip light sources in particular, are currently widely used for lighting household and industrial premises. With an increase in power, the amount of heat increases as well, which leads to an increase in the temperature of semiconductor crystals and, accordingly, to a decrease in the reliability of LEDs and a change in their photometric characteristics. Therefore, when developing the design of LED lighting devices, special attention is paid to thermal management. Since the early 2000s, heat pipes have been widely used to efficiently remove heat from powerful electronic components. They do not require power for moving the working fluid and are most suitable for use in LED luminaires. In this study, the authors carry out a computer simulation of a cooling system based on heat pipes, which is then used to design and test a powerful compact LED lamp with a thermal load of up to 100 W. Heat pipes with a length of 150 mm are used to remove heat from the LED light source to the heat exchanger rings located concentrically around it. The heat exchanger rings are cooled by natural convection of the ambient air. The results of computer modeling of the temperature field of the developed cooling system show that at a power of the LED light source of 140.7 W, the temperature of the LED matrix case is 60.5°C, and the experimentally measured temperature is 61.3°C. The experimentally determined thermal power of the LED matrix is 91.5 W. The p–n junction temperature is 79.6°C. The total thermal resistance of the cooling system is 0.453°C/W. The obtained results indicate the effectiveness of the developed design.
{"title":"Experimental study of a compact cooling system with heat pipes for powerful LED matrices","authors":"D. Pekur, V. Sorokin, Yu. E. Nikolaenko","doi":"10.15222/tkea2020.3-4.35","DOIUrl":"https://doi.org/10.15222/tkea2020.3-4.35","url":null,"abstract":"LED light sources, and powerful multichip light sources in particular, are currently widely used for lighting household and industrial premises. With an increase in power, the amount of heat increases as well, which leads to an increase in the temperature of semiconductor crystals and, accordingly, to a decrease in the reliability of LEDs and a change in their photometric characteristics. Therefore, when developing the design of LED lighting devices, special attention is paid to thermal management. Since the early 2000s, heat pipes have been widely used to efficiently remove heat from powerful electronic components. They do not require power for moving the working fluid and are most suitable for use in LED luminaires.\u0000In this study, the authors carry out a computer simulation of a cooling system based on heat pipes, which is then used to design and test a powerful compact LED lamp with a thermal load of up to 100 W.\u0000Heat pipes with a length of 150 mm are used to remove heat from the LED light source to the heat exchanger rings located concentrically around it. The heat exchanger rings are cooled by natural convection of the ambient air. The results of computer modeling of the temperature field of the developed cooling system show that at a power of the LED light source of 140.7 W, the temperature of the LED matrix case is 60.5°C, and the experimentally measured temperature is 61.3°C. The experimentally determined thermal power of the LED matrix is 91.5 W. The p–n junction temperature is 79.6°C. The total thermal resistance of the cooling system is 0.453°C/W. The obtained results indicate the effectiveness of the developed design.","PeriodicalId":231412,"journal":{"name":"Технология и конструирование в электронной аппаратуре","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116337081","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.15222/tkea2019.1-2.27
Yu. E. Nikolaenko, A. Baranyuk, S. Reva, V. A. Rohachov
Modern radar stations are widely used to obtain images of earth surface with high spatial resolution, to identify moving objects in the air, on sea and on the ground, and allow determining the coordinates and movement parameters accurately. Active phased antenna arrays with large number of transmitting modules are widely used as antenna systems in radar stations. The heat generated by the active microwave elements of the output amplifiers of the transmitting module, leads to an increase in their temperature and to decrease in reliability. In this regard, the task of increasing the cooling efficiency of active microwave elements of the output power amplifiers is important. The aim of this study is to assess the possibilities of air cooling of the active elements of the output power amplifier in relation to the transition from gallium arsenide to gallium nitride element base with increased heat generation. This paper presents the results of computer simulation for the temperature filed of the mounting base of the radiator casing, on which 8 heat-generating elements with a local heat release of 28 W each are installed. Cooling fins are made on the opposite base of the radiator casing. The finned surface of the radiator casing is blown by an air stream with an inlet air temperature of 40°C. The simulation was carried out for three values of the air flow rate in the interfin channels: 1, 6 and 10 m/s. It is shown that the maximum temperature of the mounting base of the radiator casing is 90.1°C and is observed at an air flow rate of 1 m/s inside the interfin channels. Increasing the air speed up to 10 m/s makes it possible to reduce the temperature at the installation site of the microwave elements down to 72.1°C. A new technical solution was proposed to further improve the efficiency of the applied cooling system and to reduce the temperature of the mounting surface of the radiator casing.
现代雷达站广泛用于获取高空间分辨率的地球表面图像，识别空中、海上和地面的运动物体，并可以准确地确定其坐标和运动参数。具有大量发射模块的有源相控阵天线被广泛应用于雷达站的天线系统中。发射模块输出放大器的有源微波元件产生的热量导致其温度升高，可靠性降低。在这方面，提高输出功率放大器的有源微波元件的冷却效率的任务是重要的。本研究的目的是评估空气冷却输出功率放大器有源元件的可能性，与从砷化镓到氮化镓元素基的转变有关，产生的热量增加。本文介绍了在散热器外壳安装底座上安装8个局部放热功率为28w的发热元件的温度场的计算机模拟结果。散热片在散热器外壳的相对底座上制作。散热器外壳的翅片表面由入口温度为40℃的气流吹入。分别对1、6、10 m/s 3个介面气流流速值进行了数值模拟。结果表明，当空气流速为1m /s时，散热器外壳安装底座的最高温度为90.1℃。将空气速度提高到10m /s，可以将微波元件安装位置的温度降低到72.1°C。为了进一步提高应用冷却系统的效率，降低散热器外壳安装表面的温度，提出了一种新的技术解决方案。
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Pub Date : 1900-01-01DOI: 10.15222/tkea2021.5-6.41
R. Melnyk, V. Kravets, L. V. Lipnitsky
The increase in heat generated by electronic components requires a need to expand the range of two-phase heat exchangers for thermal stabilization of the components. The efficiency of the two-phase systems (heat pipes, steam chambers) can be improved by using metal-fiber capillary-porous structures. Experimental studies for the conditions close to the operating conditions of heat pipes and vapor chambers described in known publications are rather incomplete. The aim of this study is to determine the boundary heat fluxes for water boiling on porous structures under capillary soaking, to investigate the influence of saturation pressure and structural parameters on the boundary heat fluxes, and to determine the optimal structural parameters of porous samples, i.e. such parameters that would allow the highest possible values of critical heat fluxes under given conditions. The authors investigate 0.3 and 0.5 mm thick capillary structure samples made of copper fibers with a diameter of 10 to 50 μm and a porosity range of 65—85%. The study has found that reducing the saturation pressure from 0.1 to 0.012 MPa leads to a decrease in the boundary heat flux values by 15—40%, depending on the effective pore diameters. The study allowed establishing that the maximum heat flux values are achieved for the samples with an effective pore diameter of 60 to 80 μm. It was also found that for the 0.5 mm thick samples, the boundary heat fluxes are 5—20% higher than for the 0.3 mm thick samples. The decrease in saturation pressure has been found to lead to a decrease in the range of two-phase heat exchange systems. For a number of samples, the authors have obtained the optimal effective pore diameters ensuring the highest critical heat flux values in the studied range.
{"title":"Critical heat fluxes during boiling under capillary transport conditions in two-phase thermostabilization systems","authors":"R. Melnyk, V. Kravets, L. V. Lipnitsky","doi":"10.15222/tkea2021.5-6.41","DOIUrl":"https://doi.org/10.15222/tkea2021.5-6.41","url":null,"abstract":"The increase in heat generated by electronic components requires a need to expand the range of two-phase heat exchangers for thermal stabilization of the components. The efficiency of the two-phase systems (heat pipes, steam chambers) can be improved by using metal-fiber capillary-porous structures. Experimental studies for the conditions close to the operating conditions of heat pipes and vapor chambers described in known publications are rather incomplete. The aim of this study is to determine the boundary heat fluxes for water boiling on porous structures under capillary soaking, to investigate the influence of saturation pressure and structural parameters on the boundary heat fluxes, and to determine the optimal structural parameters of porous samples, i.e. such parameters that would allow the highest possible values of critical heat fluxes under given conditions. \u0000The authors investigate 0.3 and 0.5 mm thick capillary structure samples made of copper fibers with a diameter of 10 to 50 μm and a porosity range of 65—85%. \u0000The study has found that reducing the saturation pressure from 0.1 to 0.012 MPa leads to a decrease in the boundary heat flux values by 15—40%, depending on the effective pore diameters. The study allowed establishing that the maximum heat flux values are achieved for the samples with an effective pore diameter of 60 to 80 μm. It was also found that for the 0.5 mm thick samples, the boundary heat fluxes are 5—20% higher than for the 0.3 mm thick samples. \u0000The decrease in saturation pressure has been found to lead to a decrease in the range of two-phase heat exchange systems. For a number of samples, the authors have obtained the optimal effective pore diameters ensuring the highest critical heat flux values in the studied range.","PeriodicalId":231412,"journal":{"name":"Технология и конструирование в электронной аппаратуре","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127440929","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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