Pub Date : 1900-01-01DOI: 10.15222/tkea2022.4-6.03
V. Lapshuda, Y. Linevych, M. Dusheiko, V. Koval, V. Barbash
Nanocellulose (NC) is a promising modern material suitable for use in electronics. This material is biodegradable, and thus, if used in electronic devices, will not require disposal and will decompose naturally. An interesting feature of nanocellulose is its hygroscopicity, which makes it applicable for the manufacture of humidity sensors. In this study, we synthesized nanocellulose-based humidity sensors with a weight of humidity-sensitive layer from 0.3 to 3.6 mg. The following static and dynamic characteristics of the obtained sensors were measured: sensitivity, response, hysteresis, repeatability, response and recovery time, short and long-term stability. It was determined that at a frequency of 100 Hz, the maximum sensitivity was observed in the sample with NC mass of 1.8 mg (0.215 (%RH)–1), and at 1000 Hz, in the sample with NC mass of 0.5 mg (0.155 (%RH)–1). Thus, with increasing frequency of test signal, the sensitivity of the sensors decreases. These same samples (with NC mass of 1.8 mg at 100 Hz and 0.5 mg at 1000 Hz) showed the highest values of sensor response — 1.99‧106 and 5.43‧104, respectively. Same as with sensitivity, when frequency increases, sensor response decreases. For both frequencies, the sample with NC mass of 0.4 mg showed the lowest value of hysteresis — 0.04 and 0.12% at 100 and 1000 Hz, respectively. It was also found that the sample with NC mass of 0.3 mg has the shortest response time of 42 s. With increasing of NC weight, the response time increases about 20-fold and recovery time — by 2 orders of magnitude. The highest short-term stability was demonstrated by the sample with NC weight of 0.5 mg: deviations from the arithmetic mean were 8 and 7.8% at test frequencies of 100 and 1000 Hz, respectively. The worst short-term stability was demonstrated by the sample with NC mass of 3.3 mg with the deviation of 31.7 and 39.2% at the same frequencies. It was also determined that such sensors need to be further researched to improve long-term stability. Therefore, the measurement results demonstrate that, in terms of sensitivity and response, the optimal mass of NC film is 1.8 mg at the test frequency of 100 Hz. This sample also shows the best long-term stability. From the point of view of recoverability and sensor speed, the sample with NC weight of 0.3—0.5 mg is preferable.
{"title":"Resistive humidity sensors based on nanocellulose films for biodegradable electronics","authors":"V. Lapshuda, Y. Linevych, M. Dusheiko, V. Koval, V. Barbash","doi":"10.15222/tkea2022.4-6.03","DOIUrl":"https://doi.org/10.15222/tkea2022.4-6.03","url":null,"abstract":"Nanocellulose (NC) is a promising modern material suitable for use in electronics. This material is biodegradable, and thus, if used in electronic devices, will not require disposal and will decompose naturally. An interesting feature of nanocellulose is its hygroscopicity, which makes it applicable for the manufacture of humidity sensors. In this study, we synthesized nanocellulose-based humidity sensors with a weight of humidity-sensitive layer from 0.3 to 3.6 mg. The following static and dynamic characteristics of the obtained sensors were measured: sensitivity, response, hysteresis, repeatability, response and recovery time, short and long-term stability. It was determined that at a frequency of 100 Hz, the maximum sensitivity was observed in the sample with NC mass of 1.8 mg (0.215 (%RH)–1), and at 1000 Hz, in the sample with NC mass of 0.5 mg (0.155 (%RH)–1). Thus, with increasing frequency of test signal, the sensitivity of the sensors decreases. These same samples (with NC mass of 1.8 mg at 100 Hz and 0.5 mg at 1000 Hz) showed the highest values of sensor response — 1.99‧106 and 5.43‧104, respectively. Same as with sensitivity, when frequency increases, sensor response decreases. For both frequencies, the sample with NC mass of 0.4 mg showed the lowest value of hysteresis — 0.04 and 0.12% at 100 and 1000 Hz, respectively. It was also found that the sample with NC mass of 0.3 mg has the shortest response time of 42 s. With increasing of NC weight, the response time increases about 20-fold and recovery time — by 2 orders of magnitude. The highest short-term stability was demonstrated by the sample with NC weight of 0.5 mg: deviations from the arithmetic mean were 8 and 7.8% at test frequencies of 100 and 1000 Hz, respectively. The worst short-term stability was demonstrated by the sample with NC mass of 3.3 mg with the deviation of 31.7 and 39.2% at the same frequencies. It was also determined that such sensors need to be further researched to improve long-term stability. \u0000Therefore, the measurement results demonstrate that, in terms of sensitivity and response, the optimal mass of NC film is 1.8 mg at the test frequency of 100 Hz. This sample also shows the best long-term stability. From the point of view of recoverability and sensor speed, the sample with NC weight of 0.3—0.5 mg is preferable.","PeriodicalId":231412,"journal":{"name":"Технология и конструирование в электронной аппаратуре","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114299674","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.15222/tkea2022.1-3.39
V. Kolbunov, O. S. Tonkoshkur, O. V. Vasheruk
The metal-semiconductor phase transition (MSPT) in vanadium dioxide is accompanied by an abrupt change in a number of physical parameters of this compound, in particular the resistivity. Of great interest are glass-ceramic materials, which are synthesized on the basis of vanadium dioxide and glass of the V2O5 — P2O5 system. Electronic devices based on such materials can operate at high electric currents. This allows you to create elements known as threshold switches and critical thermistors. This paper presents the results of the study of electrical conductivity and microstructure of thermosensitive glass-ceramics synthesized on the basis of fine crystalline VO2 with crystal sizes of 5—10 μm and on the basis of nanocrystalline VO2 (crystal size 70—100 nm). In general, microstructures are typical for such materials and contain crystals of vanadium dioxide, inclusions of vanadium phosphate glass and other components of glass ceramics. There are also pores in the microstructure of the samples. The temperature dependences of the resistivity for both types of glass-ceramics have a sharp change in the resistivity by 1.5—2 decades in the region of 70°C, which is characteristic of the MSPT in vanadium dioxide. For both types of glass-ceramics, a comparative study of the resistivity during cycling through the phase transition temperature in VO2 was performed. Glass-ceramic samples synthesized on the basis of nanocrystalline VO2 showed much more stable behavior. This allows creating a stable glass-ceramic material for thermistors with a critical temperature of about 70°C.
{"title":"Electrical conductivity of thermosensitive glass-ceramics based on nanosized vanadium dioxide","authors":"V. Kolbunov, O. S. Tonkoshkur, O. V. Vasheruk","doi":"10.15222/tkea2022.1-3.39","DOIUrl":"https://doi.org/10.15222/tkea2022.1-3.39","url":null,"abstract":"The metal-semiconductor phase transition (MSPT) in vanadium dioxide is accompanied by an abrupt change in a number of physical parameters of this compound, in particular the resistivity. Of great interest are glass-ceramic materials, which are synthesized on the basis of vanadium dioxide and glass of the V2O5 — P2O5 system. Electronic devices based on such materials can operate at high electric currents. This allows you to create elements known as threshold switches and critical thermistors. This paper presents the results of the study of electrical conductivity and microstructure of thermosensitive glass-ceramics synthesized on the basis of fine crystalline VO2 with crystal sizes of 5—10 μm and on the basis of nanocrystalline VO2 (crystal size 70—100 nm). In general, microstructures are typical for such materials and contain crystals of vanadium dioxide, inclusions of vanadium phosphate glass and other components of glass ceramics. There are also pores in the microstructure of the samples. The temperature dependences of the resistivity for both types of glass-ceramics have a sharp change in the resistivity by 1.5—2 decades in the region of 70°C, which is characteristic of the MSPT in vanadium dioxide. For both types of glass-ceramics, a comparative study of the resistivity during cycling through the phase transition temperature in VO2 was performed. Glass-ceramic samples synthesized on the basis of nanocrystalline VO2 showed much more stable behavior. This allows creating a stable glass-ceramic material for thermistors with a critical temperature of about 70°C.","PeriodicalId":231412,"journal":{"name":"Технология и конструирование в электронной аппаратуре","volume":"194 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114235715","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.15222/TKEA2019.3-4.03
A. Druzhinin, Y. Khoverko, I. Ostrovskii, N. Liakh-Kaguy, O. A. Pasynkova
The authors investigate deformation-induced changes in the electrophysical parameters of the indium antimonide microcrystals at cryogenic temperatures in strong magnetic fields up to 10 T. It is determined that for strongly doped InSb microcrystals, the gauge factor at liquid-helium temperature is GF4.2K ≈ 72 for the charge carrier concentration of 2∙1017 сm–3, while being GF4.2K ≈ 47 for the concentration of 6∙1017 сm–3, at ε = –3∙10–4 rel. un. For the development of magnetic field sensors based on the magnetoresistive principle, the effect of a giant magnetic resistivity reaching 720% at a temperature of 4.2 K is used.
{"title":"Deformation-induced effects in indium antimonide microstructures at cryogenic temperatures for sensor applications","authors":"A. Druzhinin, Y. Khoverko, I. Ostrovskii, N. Liakh-Kaguy, O. A. Pasynkova","doi":"10.15222/TKEA2019.3-4.03","DOIUrl":"https://doi.org/10.15222/TKEA2019.3-4.03","url":null,"abstract":"The authors investigate deformation-induced changes in the electrophysical parameters of the indium antimonide microcrystals at cryogenic temperatures in strong magnetic fields up to 10 T. It is determined that for strongly doped InSb microcrystals, the gauge factor at liquid-helium temperature is GF4.2K ≈ 72 for the charge carrier concentration of 2∙1017 сm–3, while being GF4.2K ≈ 47 for the concentration of 6∙1017 сm–3, at ε = –3∙10–4 rel. un. For the development of magnetic field sensors based on the magnetoresistive principle, the effect of a giant magnetic resistivity reaching 720% at a temperature of 4.2 K is used.","PeriodicalId":231412,"journal":{"name":"Технология и конструирование в электронной аппаратуре","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126124645","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.15222/tkea2019.3-4.10
A. N. Tynynyka
When designing most electronic systems, the main focus is on the development of the devices themselves, while the problem of meeting the requirements for the interference protection usually take second place, which calls for a need in this particular study. The article is devoted to methods and rules for design of radio electronic devices, which reduce noise and interference. The author provides practical guidance in the issues of choosing components, installing cables and connectors, designing print nodes and interference filtering. The urgency of these tasks is caused by several principal reasons, i.e., the increase of the speed of semiconductor devices and electronic circuits in general, reducing the amplitudes of the working signals of digital devices, increasing effect of interconnects and cascade layouts on the stability and speed of electronic devices and systems, the complex, costly and time consuming process of finding and eliminating the causes of low noise immunity of electronic devices. With the speed growth and the layout density of the elements, ensuring the noise immunity of the electromagnetic interaction between different devices and systems becomes the most important task of designing the radio electronic systems in general. When designing any electronic circuit, additional resistive, inductive and capacitive parasitic parameters are inevitably introduced. This can critically affect the performance of the real-life design by lowering its speed and noise immunity, even leading to complete failure. Design and installation have a particularly strong influence on the operation of high-speed (high-frequency) circuits and devices. In such cases, system speed, noise immunity and electromagnetic compatibility become the main criteria for the quality of electronic design.
{"title":"Reduction of noise and interference by rational selection of electronic components in lumped parameter channels at high speed data processing","authors":"A. N. Tynynyka","doi":"10.15222/tkea2019.3-4.10","DOIUrl":"https://doi.org/10.15222/tkea2019.3-4.10","url":null,"abstract":"When designing most electronic systems, the main focus is on the development of the devices themselves, while the problem of meeting the requirements for the interference protection usually take second place, which calls for a need in this particular study. \u0000The article is devoted to methods and rules for design of radio electronic devices, which reduce noise and interference. The author provides practical guidance in the issues of choosing components, installing cables and connectors, designing print nodes and interference filtering. The urgency of these tasks is caused by several principal reasons, i.e., the increase of the speed of semiconductor devices and electronic circuits in general, reducing the amplitudes of the working signals of digital devices, increasing effect of interconnects and cascade layouts on the stability and speed of electronic devices and systems, the complex, costly and time consuming process of finding and eliminating the causes of low noise immunity of electronic devices. \u0000With the speed growth and the layout density of the elements, ensuring the noise immunity of the electromagnetic interaction between different devices and systems becomes the most important task of designing the radio electronic systems in general. When designing any electronic circuit, additional resistive, inductive and capacitive parasitic parameters are inevitably introduced. This can critically affect the performance of the real-life design by lowering its speed and noise immunity, even leading to complete failure. Design and installation have a particularly strong influence on the operation of high-speed (high-frequency) circuits and devices. In such cases, system speed, noise immunity and electromagnetic compatibility become the main criteria for the quality of electronic design.","PeriodicalId":231412,"journal":{"name":"Технология и конструирование в электронной аппаратуре","volume":"61 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131313996","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.15222/tkea2021.5-6.20
V. Chmil
The paper presents an analysis of existing methods of controlling the efficiency of multipart radio engineering systems and their individual components. The authors consider the situations when traditional methods do not allow controlling the efficiency of the system in operational mode. The study substantiates the practicability and possibility of estimating the efficiency of microwave channels for receiving telemetry information from artificial space objects according to indirect criteria. The principle of forming a list of indirect control criteria is demonstrated on the example of the functional diagram of the radio receiver system of the RT-32 C, X, K radio telescope. The study formulates the principles of creating a system designed to control the parameters of the information channel of such a microwave radio receiver system by controlling indirect parameters which correspond to the chosen criteria and the list of the basic parameters. A list of indirect parameters affecting the performance of the entire system by controlling the characteristics of its main parameters has been created. The paper carefully considers the problems that arise when equipping the radio receiver system with built-in tools for controlling and managing the indirect parameters. A system of nominal equations is designed for estimating the state of the basic parameters of the components of the radio receiver system. Each of the indirect parameters is codified in digital form. An example of a block diagram of a distributed control and management system for complex radio devices is presented. The authors determine acceptable deviations for the indirect parameters relative to the nominal values of the direct parameters for controlling the state of both individual devices and the whole multipart system. It is proposed to implement a control and management system of a complex system by using a specialized controller-based circuit board built into each functional device of the radio receiver system. One possible version of such board, its design and all functional units are considered in detail. The proposed methods of controlling and managing the state of a multipart radio-technical system when receiving telemetric information directly in the working mode has been successfully approved during a series of radio astronomical studies on RT-32 C, X, K radio telescope at the Space Researches and Communications Center of the State Space Agency of Ukraine.
{"title":"Monitoring the efficiency of microwave channels for receiving telemetry information using indirect parameters","authors":"V. Chmil","doi":"10.15222/tkea2021.5-6.20","DOIUrl":"https://doi.org/10.15222/tkea2021.5-6.20","url":null,"abstract":"The paper presents an analysis of existing methods of controlling the efficiency of multipart radio engineering systems and their individual components. The authors consider the situations when traditional methods do not allow controlling the efficiency of the system in operational mode. The study substantiates the practicability and possibility of estimating the efficiency of microwave channels for receiving telemetry information from artificial space objects according to indirect criteria.\u0000The principle of forming a list of indirect control criteria is demonstrated on the example of the functional diagram of the radio receiver system of the RT-32 C, X, K radio telescope. The study formulates the principles of creating a system designed to control the parameters of the information channel of such a microwave radio receiver system by controlling indirect parameters which correspond to the chosen criteria and the list of the basic parameters. A list of indirect parameters affecting the performance of the entire system by controlling the characteristics of its main parameters has been created. The paper carefully considers the problems that arise when equipping the radio receiver system with built-in tools for controlling and managing the indirect parameters. A system of nominal equations is designed for estimating the state of the basic parameters of the components of the radio receiver system. Each of the indirect parameters is codified in digital form. An example of a block diagram of a distributed control and management system for complex radio devices is presented.\u0000The authors determine acceptable deviations for the indirect parameters relative to the nominal values of the direct parameters for controlling the state of both individual devices and the whole multipart system. It is proposed to implement a control and management system of a complex system by using a specialized controller-based circuit board built into each functional device of the radio receiver system. One possible version of such board, its design and all functional units are considered in detail.\u0000The proposed methods of controlling and managing the state of a multipart radio-technical system when receiving telemetric information directly in the working mode has been successfully approved during a series of radio astronomical studies on RT-32 C, X, K radio telescope at the Space Researches and Communications Center of the State Space Agency of Ukraine.","PeriodicalId":231412,"journal":{"name":"Технология и конструирование в электронной аппаратуре","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133171210","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.15222/tkea2020.3-4.17
A. Fedorenko
Laser rangefinders are widely used to measure distances for various civil and military purposes, as well as in rocket and space technology. The optical channel of such rangefinders uses high-speed p–i–n, or avalanche, photodiodes based on Si, Ge or InGaAs depending on the operating wavelength of the rangefinder in question. The paper describes a manufacturing process for high-speed Ge-p–i–n photodiodes for laser rangefinders using the diffusion method. The passivation layer is made of ZnSe, which is a new solution for this type of photodiodes. The existing theoretical models are used to study the spectral ampere-watt sensitivity of the diodes at various values of the active region parameters, and the simulation results reliability is evaluated by the respective measurements. It is shown that the obtained theoretical dependence well agrees with the measurement data. Moreover, the authors for the first time study the spectral photosensitivity of the Ge-p–i–n photodiode with a coated silicon filter covering the range λ = 1.4—1.6 μm. The spectral sensitivity range for the diodes is determined to be λ = 1.1—1.7 μm. The maximum photosensitivity of 0.42 A/W is achieved at a wavelength of λ = 1.54 μm. The authors argue that Ge-p–i–n photodiodes with a silicon filter are resistant to the “blinding” laser radiation with λ = 1.064 μm. The calculated data on the spectral photosensitivity of the photodiode with a filter also well agree with the experiment. Thus, the chosen simulation technique allows taking into account most design and technological characteristics of the photodiodes during theoretical simulation, which makes it possible to accurately predict and optimize their parameters for a specific practical task and improve the manufacturing process of the photodiodes.
{"title":"Spectral photosensitivity of diffused Ge-p–i–n photodiods","authors":"A. Fedorenko","doi":"10.15222/tkea2020.3-4.17","DOIUrl":"https://doi.org/10.15222/tkea2020.3-4.17","url":null,"abstract":"Laser rangefinders are widely used to measure distances for various civil and military purposes, as well as in rocket and space technology. The optical channel of such rangefinders uses high-speed p–i–n, or avalanche, photodiodes based on Si, Ge or InGaAs depending on the operating wavelength of the rangefinder in question.\u0000The paper describes a manufacturing process for high-speed Ge-p–i–n photodiodes for laser rangefinders using the diffusion method. The passivation layer is made of ZnSe, which is a new solution for this type of photodiodes. The existing theoretical models are used to study the spectral ampere-watt sensitivity of the diodes at various values of the active region parameters, and the simulation results reliability is evaluated by the respective measurements. It is shown that the obtained theoretical dependence well agrees with the measurement data.\u0000Moreover, the authors for the first time study the spectral photosensitivity of the Ge-p–i–n photodiode with a coated silicon filter covering the range λ = 1.4—1.6 μm. The spectral sensitivity range for the diodes is determined to be λ = 1.1—1.7 μm. The maximum photosensitivity of 0.42 A/W is achieved at a wavelength of λ = 1.54 μm. The authors argue that Ge-p–i–n photodiodes with a silicon filter are resistant to the “blinding” laser radiation with λ = 1.064 μm. The calculated data on the spectral photosensitivity of the photodiode with a filter also well agree with the experiment.\u0000Thus, the chosen simulation technique allows taking into account most design and technological characteristics of the photodiodes during theoretical simulation, which makes it possible to accurately predict and optimize their parameters for a specific practical task and improve the manufacturing process of the photodiodes.","PeriodicalId":231412,"journal":{"name":"Технология и конструирование в электронной аппаратуре","volume":"94 ","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134005884","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.15222/tkea2021.5-6.26
Yulia Yamnenko, V. O. Osokin
The article compares the accuracy of mobile robot positioning by the technique based on genetic algorithms, which are related to artificial intelligence, and by the trilateration technique. The authors consider the application of appropriate terminology borrowed from genetics and data processing algorithms for this technical problem. When using the genetic algorithm, the coordinates of the robot are found using angular methods or rigid logic methods, which are not particularly effective because of the large amount of data that is not needed for positioning, so there is a need to select the most likely indicators to find the best route to the target. The genetic algorithm used in this study first selects the data by a certain criterion to enter the first population, and then the data falls into the beginning of the genetic algorithm. Each individual has chromosomes that represent a sequence of data, i.e., genes. After a chromosome is coded, the following genetic operations are performed: crossing over and mutation. These operations occur cyclically until a population with high fitness is found. The solution is a sequence of selected coordinates, from which a system is constructed to determine the optimal route to the destination. The robot navigation techniques are compared in terms of coordinate positioning accuracy. Calculation results on dispersion and absolute positioning error show that the positioning using genetic algorithm gives less error than the one using trilateration method. The genetic algorithm allows finding the optimal solution of the positioning problem while reducing a significant influence of the measurement error of sensors and other measuring devices on the result.
{"title":"Comparison of mobile robot positioning techniques","authors":"Yulia Yamnenko, V. O. Osokin","doi":"10.15222/tkea2021.5-6.26","DOIUrl":"https://doi.org/10.15222/tkea2021.5-6.26","url":null,"abstract":"The article compares the accuracy of mobile robot positioning by the technique based on genetic algorithms, which are related to artificial intelligence, and by the trilateration technique. The authors consider the application of appropriate terminology borrowed from genetics and data processing algorithms for this technical problem. When using the genetic algorithm, the coordinates of the robot are found using angular methods or rigid logic methods, which are not particularly effective because of the large amount of data that is not needed for positioning, so there is a need to select the most likely indicators to find the best route to the target. \u0000The genetic algorithm used in this study first selects the data by a certain criterion to enter the first population, and then the data falls into the beginning of the genetic algorithm. Each individual has chromosomes that represent a sequence of data, i.e., genes. After a chromosome is coded, the following genetic operations are performed: crossing over and mutation. These operations occur cyclically until a population with high fitness is found. The solution is a sequence of selected coordinates, from which a system is constructed to determine the optimal route to the destination. \u0000The robot navigation techniques are compared in terms of coordinate positioning accuracy. Calculation results on dispersion and absolute positioning error show that the positioning using genetic algorithm gives less error than the one using trilateration method. The genetic algorithm allows finding the optimal solution of the positioning problem while reducing a significant influence of the measurement error of sensors and other measuring devices on the result.","PeriodicalId":231412,"journal":{"name":"Технология и конструирование в электронной аппаратуре","volume":"87 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115790009","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.15222/tkea2019.1-2.27
Yu. E. Nikolaenko, A. Baranyuk, S. Reva, V. A. Rohachov
Modern radar stations are widely used to obtain images of earth surface with high spatial resolution, to identify moving objects in the air, on sea and on the ground, and allow determining the coordinates and movement parameters accurately. Active phased antenna arrays with large number of transmitting modules are widely used as antenna systems in radar stations. The heat generated by the active microwave elements of the output amplifiers of the transmitting module, leads to an increase in their temperature and to decrease in reliability. In this regard, the task of increasing the cooling efficiency of active microwave elements of the output power amplifiers is important. The aim of this study is to assess the possibilities of air cooling of the active elements of the output power amplifier in relation to the transition from gallium arsenide to gallium nitride element base with increased heat generation. This paper presents the results of computer simulation for the temperature filed of the mounting base of the radiator casing, on which 8 heat-generating elements with a local heat release of 28 W each are installed. Cooling fins are made on the opposite base of the radiator casing. The finned surface of the radiator casing is blown by an air stream with an inlet air temperature of 40°C. The simulation was carried out for three values of the air flow rate in the interfin channels: 1, 6 and 10 m/s. It is shown that the maximum temperature of the mounting base of the radiator casing is 90.1°C and is observed at an air flow rate of 1 m/s inside the interfin channels. Increasing the air speed up to 10 m/s makes it possible to reduce the temperature at the installation site of the microwave elements down to 72.1°C. A new technical solution was proposed to further improve the efficiency of the applied cooling system and to reduce the temperature of the mounting surface of the radiator casing.
现代雷达站广泛用于获取高空间分辨率的地球表面图像，识别空中、海上和地面的运动物体，并可以准确地确定其坐标和运动参数。具有大量发射模块的有源相控阵天线被广泛应用于雷达站的天线系统中。发射模块输出放大器的有源微波元件产生的热量导致其温度升高，可靠性降低。在这方面，提高输出功率放大器的有源微波元件的冷却效率的任务是重要的。本研究的目的是评估空气冷却输出功率放大器有源元件的可能性，与从砷化镓到氮化镓元素基的转变有关，产生的热量增加。本文介绍了在散热器外壳安装底座上安装8个局部放热功率为28w的发热元件的温度场的计算机模拟结果。散热片在散热器外壳的相对底座上制作。散热器外壳的翅片表面由入口温度为40℃的气流吹入。分别对1、6、10 m/s 3个介面气流流速值进行了数值模拟。结果表明，当空气流速为1m /s时，散热器外壳安装底座的最高温度为90.1℃。将空气速度提高到10m /s，可以将微波元件安装位置的温度降低到72.1°C。为了进一步提高应用冷却系统的效率，降低散热器外壳安装表面的温度，提出了一种新的技术解决方案。
{"title":"CFD-modeling of the temperature field of the radiator casing of the transmitting module of the active phased antenna arrays with air cooling","authors":"Yu. E. Nikolaenko, A. Baranyuk, S. Reva, V. A. Rohachov","doi":"10.15222/tkea2019.1-2.27","DOIUrl":"https://doi.org/10.15222/tkea2019.1-2.27","url":null,"abstract":"Modern radar stations are widely used to obtain images of earth surface with high spatial resolution, to identify moving objects in the air, on sea and on the ground, and allow determining the coordinates and movement parameters accurately. Active phased antenna arrays with large number of transmitting modules are widely used as antenna systems in radar stations. The heat generated by the active microwave elements of the output amplifiers of the transmitting module, leads to an increase in their temperature and to decrease in reliability. In this regard, the task of increasing the cooling efficiency of active microwave elements of the output power amplifiers is important. \u0000The aim of this study is to assess the possibilities of air cooling of the active elements of the output power amplifier in relation to the transition from gallium arsenide to gallium nitride element base with increased heat generation. \u0000This paper presents the results of computer simulation for the temperature filed of the mounting base of the radiator casing, on which 8 heat-generating elements with a local heat release of 28 W each are installed. Cooling fins are made on the opposite base of the radiator casing. The finned surface of the radiator casing is blown by an air stream with an inlet air temperature of 40°C. The simulation was carried out for three values of the air flow rate in the interfin channels: 1, 6 and 10 m/s. It is shown that the maximum temperature of the mounting base of the radiator casing is 90.1°C and is observed at an air flow rate of 1 m/s inside the interfin channels. Increasing the air speed up to 10 m/s makes it possible to reduce the temperature at the installation site of the microwave elements down to 72.1°C. A new technical solution was proposed to further improve the efficiency of the applied cooling system and to reduce the temperature of the mounting surface of the radiator casing.","PeriodicalId":231412,"journal":{"name":"Технология и конструирование в электронной аппаратуре","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129372231","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.15222/tkea2021.5-6.33
O. S. Polukhin, V. V. Kravchina
The paper analyzes the reasons and factors that allow avoiding faceting of non-oriented linear zones. It is shown that in the manufacture of semiconductor chips with a large perimeter and a reverse voltage of 2000 V, the conditions sine qua non to create isolating walls on silicon wafers with an orientation different from (111) are to form an ensemble of linear zones by the method of high-temperature selective forced wetting (HSV) and to fulfill a number of requirements to the “thermomigration” photomask and zones immersion stage during TM at high temperatures. It is shown that these factors provide a stable migration of an ensemble of linear zones through wafers (110) even in a stationary temperature gradient field. For the first time in the world, the authors practically demonstrate the possibility of stable migration of an ensemble of non-oriented linear zones through silicon (110) in a stationary temperature gradient conditions, outlining the conditions and factors necessary for this process. It is assumed that when the conditions for the formation of linear zones and their immersion are met, the crystallographic orientation of the silicon wafers does not matter at all.
{"title":"Thermomigration of non-oriented aluminium-rich liquid zones through (110) silicon wafers","authors":"O. S. Polukhin, V. V. Kravchina","doi":"10.15222/tkea2021.5-6.33","DOIUrl":"https://doi.org/10.15222/tkea2021.5-6.33","url":null,"abstract":"The paper analyzes the reasons and factors that allow avoiding faceting of non-oriented linear zones. It is shown that in the manufacture of semiconductor chips with a large perimeter and a reverse voltage of 2000 V, the conditions sine qua non to create isolating walls on silicon wafers with an orientation different from (111) are to form an ensemble of linear zones by the method of high-temperature selective forced wetting (HSV) and to fulfill a number of requirements to the “thermomigration” photomask and zones immersion stage during TM at high temperatures. It is shown that these factors provide a stable migration of an ensemble of linear zones through wafers (110) even in a stationary temperature gradient field.\u0000For the first time in the world, the authors practically demonstrate the possibility of stable migration of an ensemble of non-oriented linear zones through silicon (110) in a stationary temperature gradient conditions, outlining the conditions and factors necessary for this process. It is assumed that when the conditions for the formation of linear zones and their immersion are met, the crystallographic orientation of the silicon wafers does not matter at all.","PeriodicalId":231412,"journal":{"name":"Технология и конструирование в электронной аппаратуре","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128693527","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.15222/tkea2020.3-4.35
D. Pekur, V. Sorokin, Yu. E. Nikolaenko
LED light sources, and powerful multichip light sources in particular, are currently widely used for lighting household and industrial premises. With an increase in power, the amount of heat increases as well, which leads to an increase in the temperature of semiconductor crystals and, accordingly, to a decrease in the reliability of LEDs and a change in their photometric characteristics. Therefore, when developing the design of LED lighting devices, special attention is paid to thermal management. Since the early 2000s, heat pipes have been widely used to efficiently remove heat from powerful electronic components. They do not require power for moving the working fluid and are most suitable for use in LED luminaires. In this study, the authors carry out a computer simulation of a cooling system based on heat pipes, which is then used to design and test a powerful compact LED lamp with a thermal load of up to 100 W. Heat pipes with a length of 150 mm are used to remove heat from the LED light source to the heat exchanger rings located concentrically around it. The heat exchanger rings are cooled by natural convection of the ambient air. The results of computer modeling of the temperature field of the developed cooling system show that at a power of the LED light source of 140.7 W, the temperature of the LED matrix case is 60.5°C, and the experimentally measured temperature is 61.3°C. The experimentally determined thermal power of the LED matrix is 91.5 W. The p–n junction temperature is 79.6°C. The total thermal resistance of the cooling system is 0.453°C/W. The obtained results indicate the effectiveness of the developed design.
{"title":"Experimental study of a compact cooling system with heat pipes for powerful LED matrices","authors":"D. Pekur, V. Sorokin, Yu. E. Nikolaenko","doi":"10.15222/tkea2020.3-4.35","DOIUrl":"https://doi.org/10.15222/tkea2020.3-4.35","url":null,"abstract":"LED light sources, and powerful multichip light sources in particular, are currently widely used for lighting household and industrial premises. With an increase in power, the amount of heat increases as well, which leads to an increase in the temperature of semiconductor crystals and, accordingly, to a decrease in the reliability of LEDs and a change in their photometric characteristics. Therefore, when developing the design of LED lighting devices, special attention is paid to thermal management. Since the early 2000s, heat pipes have been widely used to efficiently remove heat from powerful electronic components. They do not require power for moving the working fluid and are most suitable for use in LED luminaires.\u0000In this study, the authors carry out a computer simulation of a cooling system based on heat pipes, which is then used to design and test a powerful compact LED lamp with a thermal load of up to 100 W.\u0000Heat pipes with a length of 150 mm are used to remove heat from the LED light source to the heat exchanger rings located concentrically around it. The heat exchanger rings are cooled by natural convection of the ambient air. The results of computer modeling of the temperature field of the developed cooling system show that at a power of the LED light source of 140.7 W, the temperature of the LED matrix case is 60.5°C, and the experimentally measured temperature is 61.3°C. The experimentally determined thermal power of the LED matrix is 91.5 W. The p–n junction temperature is 79.6°C. The total thermal resistance of the cooling system is 0.453°C/W. The obtained results indicate the effectiveness of the developed design.","PeriodicalId":231412,"journal":{"name":"Технология и конструирование в электронной аппаратуре","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116337081","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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