Pub Date : 1900-01-01DOI: 10.15222/tkea2021.5-6.33
O. S. Polukhin, V. V. Kravchina
The paper analyzes the reasons and factors that allow avoiding faceting of non-oriented linear zones. It is shown that in the manufacture of semiconductor chips with a large perimeter and a reverse voltage of 2000 V, the conditions sine qua non to create isolating walls on silicon wafers with an orientation different from (111) are to form an ensemble of linear zones by the method of high-temperature selective forced wetting (HSV) and to fulfill a number of requirements to the “thermomigration” photomask and zones immersion stage during TM at high temperatures. It is shown that these factors provide a stable migration of an ensemble of linear zones through wafers (110) even in a stationary temperature gradient field. For the first time in the world, the authors practically demonstrate the possibility of stable migration of an ensemble of non-oriented linear zones through silicon (110) in a stationary temperature gradient conditions, outlining the conditions and factors necessary for this process. It is assumed that when the conditions for the formation of linear zones and their immersion are met, the crystallographic orientation of the silicon wafers does not matter at all.
{"title":"Thermomigration of non-oriented aluminium-rich liquid zones through (110) silicon wafers","authors":"O. S. Polukhin, V. V. Kravchina","doi":"10.15222/tkea2021.5-6.33","DOIUrl":"https://doi.org/10.15222/tkea2021.5-6.33","url":null,"abstract":"The paper analyzes the reasons and factors that allow avoiding faceting of non-oriented linear zones. It is shown that in the manufacture of semiconductor chips with a large perimeter and a reverse voltage of 2000 V, the conditions sine qua non to create isolating walls on silicon wafers with an orientation different from (111) are to form an ensemble of linear zones by the method of high-temperature selective forced wetting (HSV) and to fulfill a number of requirements to the “thermomigration” photomask and zones immersion stage during TM at high temperatures. It is shown that these factors provide a stable migration of an ensemble of linear zones through wafers (110) even in a stationary temperature gradient field.\u0000For the first time in the world, the authors practically demonstrate the possibility of stable migration of an ensemble of non-oriented linear zones through silicon (110) in a stationary temperature gradient conditions, outlining the conditions and factors necessary for this process. It is assumed that when the conditions for the formation of linear zones and their immersion are met, the crystallographic orientation of the silicon wafers does not matter at all.","PeriodicalId":231412,"journal":{"name":"Технология и конструирование в электронной аппаратуре","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128693527","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.15222/tkea2020.3-4.42
V. Kravets, D. Hurov
This paper presents and analyzes experimental data on the total thermal resistances of two-phase miniature thermosyphons with nanofluids; the geometric parameters of the thermosyphons for all experimental samples are identical: total length 700 mm, internal diameter 5 mm. The following nanofluids used as heat carriers are: aqueous nanofluid based on carbon nanotubes, aqueous nanofluid based on synthetic diamond, and aqueous nanofluid based on amorphous carbon. Much attention is also paid to the influence of the filling ratio on the heat transfer characteristics of the thermosyphons. The influence of filling ratio and types of nanofluid on the performance of miniature closed two-phase thermosyphons is demonstrated.
{"title":"Heat transfer characteristics of miniature two-phase thermosyphons with nanofluids","authors":"V. Kravets, D. Hurov","doi":"10.15222/tkea2020.3-4.42","DOIUrl":"https://doi.org/10.15222/tkea2020.3-4.42","url":null,"abstract":"This paper presents and analyzes experimental data on the total thermal resistances of two-phase miniature thermosyphons with nanofluids; the geometric parameters of the thermosyphons for all experimental samples are identical: total length 700 mm, internal diameter 5 mm. The following nanofluids used as heat carriers are: aqueous nanofluid based on carbon nanotubes, aqueous nanofluid based on synthetic diamond, and aqueous nanofluid based on amorphous carbon. Much attention is also paid to the influence of the filling ratio on the heat transfer characteristics of the thermosyphons. The influence of filling ratio and types of nanofluid on the performance of miniature closed two-phase thermosyphons is demonstrated.","PeriodicalId":231412,"journal":{"name":"Технология и конструирование в электронной аппаратуре","volume":"342 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134144605","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.15222/tkea2021.3-4.45
Y. Sokol, K. Kolisnyk, T. V. Bernads’ka
Spectral photometry is currently widely used for quantitative and qualitative analysis of biological molecules in medical biology. The method is based on the ability of molecules to absorb electromagnetic radiation. Modern clinical laboratory diagnostics extensively uses optical methods of analysis that rely on these physical properties of semitransparent objects, such as blood components. Knowing the absorption spectra of blood and its components, it is possible to quantify the concentration of all the components by solving the mathematical system of equations corresponding to these spectra. However, the existing methods of optical analysis of erythrocytes do not allow quantifying their geometric parameters, which may also indicate certain diagnostic signs and be used to analyze the clinical condition of the patient's body. The aim of this work is to evaluate the metrological characteristics of the newly developed method of determining the geometric parameters of erythrocytes, which combines spectral analysis and double annealing. The input data for the 3D imaging of erythrocytes were taken from the images of the sample both made in natural light and illuminated by a coherent light source with different wavelengths. The latter, after some additional image correlation, increases the reliability of the result. The calculation results on the errors and the measuring channel resolution of the digital interference microscope indicate an acceptable accuracy of the method. The accuracy of the three-dimensional image obtained by the proposed method is more than 20% higher than that of other known methods. This allows determining the informative geometric parameters of the structure of erythrocytes more accurately and using them to obtain additional clinical diagnostic characteristics of the patient's body.
{"title":"Evaluation of metrological characteristics of spectral analysis method for determining erythrocyte morphology","authors":"Y. Sokol, K. Kolisnyk, T. V. Bernads’ka","doi":"10.15222/tkea2021.3-4.45","DOIUrl":"https://doi.org/10.15222/tkea2021.3-4.45","url":null,"abstract":"Spectral photometry is currently widely used for quantitative and qualitative analysis of biological molecules in medical biology. The method is based on the ability of molecules to absorb electromagnetic radiation. Modern clinical laboratory diagnostics extensively uses optical methods of analysis that rely on these physical properties of semitransparent objects, such as blood components. Knowing the absorption spectra of blood and its components, it is possible to quantify the concentration of all the components by solving the mathematical system of equations corresponding to these spectra. However, the existing methods of optical analysis of erythrocytes do not allow quantifying their geometric parameters, which may also indicate certain diagnostic signs and be used to analyze the clinical condition of the patient's body.\u0000The aim of this work is to evaluate the metrological characteristics of the newly developed method of determining the geometric parameters of erythrocytes, which combines spectral analysis and double annealing.\u0000The input data for the 3D imaging of erythrocytes were taken from the images of the sample both made in natural light and illuminated by a coherent light source with different wavelengths. The latter, after some additional image correlation, increases the reliability of the result. The calculation results on the errors and the measuring channel resolution of the digital interference microscope indicate an acceptable accuracy of the method. The accuracy of the three-dimensional image obtained by the proposed method is more than 20% higher than that of other known methods. This allows determining the informative geometric parameters of the structure of erythrocytes more accurately and using them to obtain additional clinical diagnostic characteristics of the patient's body.","PeriodicalId":231412,"journal":{"name":"Технология и конструирование в электронной аппаратуре","volume":"109 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127633177","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.15222/tkea2021.3-4.57
A. Tonkoshkur, A. Ivanchenko
One of the main problems in ensuring the reliability of solar electrical power sources is local overheating, when hot spots form in photovoltaic cells of solar arrays. It is currently considered that these negative phenomena are caused, among other things, by overvoltage in the electrical circuits of solar arrays. This leads to the appearance of defective elements and a significant decrease in the functionality of the entire power generation system up to its complete failure. This study considers the possible ways to increase the reliability of solar arrays by using thermistor thermocontacting layers for preventing overvoltage events and overheating. The authors use simulation to study electrical characteristics of a photovoltaic cell in thermal contact with an additional layer based on thermistor materials with a metal to semiconductor phase transition. Vanadium dioxide with a phase transition temperature of ~340 K is considered to be a promising material for this purpose. During the phase transition, electrical resistance sharply decreases from the values characteristic of dielectrics to the values associated with metal conductors. It is shown that such thermistor layers can be used for protecting solar cells from electrical overheating under the following basic conditions: — the layer’s resistance in the «cold» state significantly exceeds that of the lightened forward-biased solar cell; — the layer’s resistance in the «heated» state is sufficiently low compared to those of the reverse-biased photovoltaic cell and of the power source. The current and temperature of the reverse-biased photovoltaic cell are limited and stabilized, and the voltage drop sharply decreases from the moment when the temperature of the thermistor layer reaches the values close to the temperature of its transition to the low-conductivity state. The obtained results substantiate the potntial of the described approach to protect photovoltaic cells of solar modules against electric thermal overloads.
{"title":"Using a layer based on materials with a metal to semiconductor phase transition for electrothermal protection of solar cells","authors":"A. Tonkoshkur, A. Ivanchenko","doi":"10.15222/tkea2021.3-4.57","DOIUrl":"https://doi.org/10.15222/tkea2021.3-4.57","url":null,"abstract":"One of the main problems in ensuring the reliability of solar electrical power sources is local overheating, when hot spots form in photovoltaic cells of solar arrays. It is currently considered that these negative phenomena are caused, among other things, by overvoltage in the electrical circuits of solar arrays. This leads to the appearance of defective elements and a significant decrease in the functionality of the entire power generation system up to its complete failure.\u0000This study considers the possible ways to increase the reliability of solar arrays by using thermistor thermocontacting layers for preventing overvoltage events and overheating. \u0000The authors use simulation to study electrical characteristics of a photovoltaic cell in thermal contact with an additional layer based on thermistor materials with a metal to semiconductor phase transition. Vanadium dioxide with a phase transition temperature of ~340 K is considered to be a promising material for this purpose. During the phase transition, electrical resistance sharply decreases from the values characteristic of dielectrics to the values associated with metal conductors.\u0000It is shown that such thermistor layers can be used for protecting solar cells from electrical overheating under the following basic conditions:\u0000— the layer’s resistance in the «cold» state significantly exceeds that of the lightened forward-biased solar cell;\u0000— the layer’s resistance in the «heated» state is sufficiently low compared to those of the reverse-biased photovoltaic cell and of the power source.\u0000The current and temperature of the reverse-biased photovoltaic cell are limited and stabilized, and the voltage drop sharply decreases from the moment when the temperature of the thermistor layer reaches the values close to the temperature of its transition to the low-conductivity state.\u0000The obtained results substantiate the potntial of the described approach to protect photovoltaic cells of solar modules against electric thermal overloads.","PeriodicalId":231412,"journal":{"name":"Технология и конструирование в электронной аппаратуре","volume":"72 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134478706","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.15222/tkea2022.4-6.10
E. M. Glushechenko
The authors justify the use of combined longitudinal-coaxial connectors — waveguide-coaxial or waveguide-microstrip type — in new modern antenna-feeder microwave paths. Using the example of a basic coaxial waveguide-coaxial connector based on a section of a regular rectangular waveguide, the study considers the process of converting an electromagnetic wave of a regular waveguide of the main waveguide type H10 into a transverse electromagnetic wave of a coaxial line with a wave resistance (impedance) Z0 = 50 Ohm. Such a connector allows implementing good electrical parameters — matching (standing wave ratio, SWR) and linear losses — but its design is difficult to configure and cannot be reliably reproduced. However, the basic operation principles of this connector make it possible to use it as a prototype when creating modern coaxial waveguide-coaxial or waveguide-microstrip connectors. One example of such a modern connector is the sealed longitudinal-coaxial waveguide-microstrip connector based on a segment of H-shaped waveguide, shorted by an end wall on one end. Correcting the reactive component of both inductive and capacitive nature will allow achieving the required parameters of the wave impedance of the connector. With this in mind, the author has built an inductive-capacitive system consisting of a matching element in the form of a staggered fin and a corrective element in the form of a rectangular parallelepiped. To ensure the air tightness of the connector design, the segment of the coaxial line was replaced by a sealed coaxial insert, which is a serial electronic component. Particular attention was paid to the layout and design of this sealed waveguide-microstrip connector, as well as to the calculation of the overall dimensions of its elements. The article proposes an original technique for measuring the main parameters of both waveguide-coaxial and waveguide-microstrip connectors. The author forms a mathematical model of combined type connectors based on the scattering wave matrix and presents the parameters of real hermetically sealed longitudinally coaxial waveguide-microstrip connectors based on waveguide segments of various standard sizes and measured at various frequencies.
{"title":"Particular aspects of designing longitudinal-coaxial waveguide-microstrip connectors","authors":"E. M. Glushechenko","doi":"10.15222/tkea2022.4-6.10","DOIUrl":"https://doi.org/10.15222/tkea2022.4-6.10","url":null,"abstract":"The authors justify the use of combined longitudinal-coaxial connectors — waveguide-coaxial or waveguide-microstrip type — in new modern antenna-feeder microwave paths.\u0000Using the example of a basic coaxial waveguide-coaxial connector based on a section of a regular rectangular waveguide, the study considers the process of converting an electromagnetic wave of a regular waveguide of the main waveguide type H10 into a transverse electromagnetic wave of a coaxial line with a wave resistance (impedance) Z0 = 50 Ohm. Such a connector allows implementing good electrical parameters — matching (standing wave ratio, SWR) and linear losses — but its design is difficult to configure and cannot be reliably reproduced. However, the basic operation principles of this connector make it possible to use it as a prototype when creating modern coaxial waveguide-coaxial or waveguide-microstrip connectors.\u0000One example of such a modern connector is the sealed longitudinal-coaxial waveguide-microstrip connector based on a segment of H-shaped waveguide, shorted by an end wall on one end. Correcting the reactive component of both inductive and capacitive nature will allow achieving the required parameters of the wave impedance of the connector. With this in mind, the author has built an inductive-capacitive system consisting of a matching element in the form of a staggered fin and a corrective element in the form of a rectangular parallelepiped. To ensure the air tightness of the connector design, the segment of the coaxial line was replaced by a sealed coaxial insert, which is a serial electronic component.\u0000Particular attention was paid to the layout and design of this sealed waveguide-microstrip connector, as well as to the calculation of the overall dimensions of its elements.\u0000The article proposes an original technique for measuring the main parameters of both waveguide-coaxial and waveguide-microstrip connectors. The author forms a mathematical model of combined type connectors based on the scattering wave matrix and presents the parameters of real hermetically sealed longitudinally coaxial waveguide-microstrip connectors based on waveguide segments of various standard sizes and measured at various frequencies.","PeriodicalId":231412,"journal":{"name":"Технология и конструирование в электронной аппаратуре","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124013483","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.15222/tkea2021.3-4.36
O. S. Pavluchenko, О. L. Kukla
Solid-state ion selective transducers, as an alternative to the traditional liquid electrolyte-filled glass electrodes, are known for over four decades now, and find their use in various areas of industry and applied science, such as in vivo analysis of the ions activity in biological and medical research, monitoring of toxic and aggressive environments, and biosensors design. However, along with potential advantages — short response time, small size, chemical inertness and durability — solid-state devices also possess certain inherent drawbacks — namely intrinsic noise, drift and instability of sensing properties, and cross-sensitivity to various interfering environmental conditions — that inhibit their widespread acceptance. Further improvement of the fabrication technology and methodology of application of these devices is thus still an important practical task even today. This paper is a first part of the two-part work dedicated to the problem of compensating the temperature dependence of a solid-state ion selective transducer output. Specifically, presented work considers the possibility of using ion-selective field-effect transistors (ISFET) that serve as primary transducers in an ionometric device, as temperature sensors. This allows compensating the temperature dependence of ionometric signal without substantial complication of the ionometer structure, and eliminates the need to include a separate thermometric channel as part of the instrument. Ionometric and thermometric channels are combined into a unified measuring path, with the sensor functions separated in time. The ISFET operation modes are switched by changing polarity of the bias voltage, and thus direction of the current flowing through the sensor. The authors propose a corresponding secondary transducer structure and simplified schematic illustrating the implementation of its key components. The concept’s applicability is supported by the circuit simulation results. Some aspects of the practical implementation of the proposed concept will be presented further in the upcoming second part of the paper.
{"title":"Quasi-synchronous thermocompensation for ISFET-based ionometric devices. Part 1: Theory and simulation","authors":"O. S. Pavluchenko, О. L. Kukla","doi":"10.15222/tkea2021.3-4.36","DOIUrl":"https://doi.org/10.15222/tkea2021.3-4.36","url":null,"abstract":"Solid-state ion selective transducers, as an alternative to the traditional liquid electrolyte-filled glass electrodes, are known for over four decades now, and find their use in various areas of industry and applied science, such as in vivo analysis of the ions activity in biological and medical research, monitoring of toxic and aggressive environments, and biosensors design. However, along with potential advantages — short response time, small size, chemical inertness and durability — solid-state devices also possess certain inherent drawbacks — namely intrinsic noise, drift and instability of sensing properties, and cross-sensitivity to various interfering environmental conditions — that inhibit their widespread acceptance. Further improvement of the fabrication technology and methodology of application of these devices is thus still an important practical task even today. \u0000This paper is a first part of the two-part work dedicated to the problem of compensating the temperature dependence of a solid-state ion selective transducer output. Specifically, presented work considers the possibility of using ion-selective field-effect transistors (ISFET) that serve as primary transducers in an ionometric device, as temperature sensors. This allows compensating the temperature dependence of ionometric signal without substantial complication of the ionometer structure, and eliminates the need to include a separate thermometric channel as part of the instrument. Ionometric and thermometric channels are combined into a unified measuring path, with the sensor functions separated in time. \u0000The ISFET operation modes are switched by changing polarity of the bias voltage, and thus direction of the current flowing through the sensor. The authors propose a corresponding secondary transducer structure and simplified schematic illustrating the implementation of its key components. The concept’s applicability is supported by the circuit simulation results. Some aspects of the practical implementation of the proposed concept will be presented further in the upcoming second part of the paper.","PeriodicalId":231412,"journal":{"name":"Технология и конструирование в электронной аппаратуре","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125720146","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.15222/tkea2022.4-6.52
I. V. Semkiv, V. Vashchynskyi, A. Kashuba, Н. A. Ilchuk, M. Solovyov
Non-aqueous electrolytes are advantageous for power sources due to the increase in the operating voltage since their electrochemical stability range is much wider. It should be noted that the capacitor’s capacitance depends on the capacitance provided by the electrode material, expressed in F/g, while its voltage and resistance depend on the electrolyte. Therefore, it is very important to study the electrochemical properties of carbon material in aqueous and organic electrolytes and to determine the effect of the electrolyte on the capacitance of the capacitor formed on its basis. The cathode mixture was made of porous carbon material obtained from biomass and a binding additive. Then, it was pressed onto a nickel grid with an area of 0,5 cm2. A 30% aqueous solution of potassium hydroxide (KOH) and a 0,7-molar solution of tetraethyl ammonium tetrafluoroborate ([C2 H5 ]4 NBF4) in acetonitrile (CH3CN) was used as the electrolyte. The measurements were carried out using two- and three-electrode schemes with a silver chloride reference electrode. Modeling impedance data to equivalent electrical circuits has assisted to establish the influence of the volume charge region in the electrode material on the capacitor’s capacitive characteristics. The specific capacitance values of 125 F/g in KOH and 101 F/g in [C2 H5 ]4 NBF4 are determined by the electrolyte type used and the nature of salts and bases dissolved in it. The practical significance of the obtained results is the application of the developed methods for obtaining carbon material with developed micro- and mesoporous structures and improved physicochemical properties.
{"title":"Influence of electrolyte nature on electrochemical properties of carbon material of plant origin","authors":"I. V. Semkiv, V. Vashchynskyi, A. Kashuba, Н. A. Ilchuk, M. Solovyov","doi":"10.15222/tkea2022.4-6.52","DOIUrl":"https://doi.org/10.15222/tkea2022.4-6.52","url":null,"abstract":"Non-aqueous electrolytes are advantageous for power sources due to the increase in the operating voltage since their electrochemical stability range is much wider. It should be noted that the capacitor’s capacitance depends on the capacitance provided by the electrode material, expressed in F/g, while its voltage and resistance depend on the electrolyte. Therefore, it is very important to study the electrochemical properties of carbon material in aqueous and organic electrolytes and to determine the effect of the electrolyte on the capacitance of the capacitor formed on its basis.\u0000The cathode mixture was made of porous carbon material obtained from biomass and a binding additive. Then, it was pressed onto a nickel grid with an area of 0,5 cm2. A 30% aqueous solution of potassium hydroxide (KOH) and a 0,7-molar solution of tetraethyl ammonium tetrafluoroborate ([C2 H5 ]4 NBF4) in acetonitrile (CH3CN) was used as the electrolyte. The measurements were carried out using two- and three-electrode schemes with a silver chloride reference electrode. Modeling impedance data to equivalent electrical circuits has assisted to establish the influence of the volume charge region in the electrode material on the capacitor’s capacitive characteristics. The specific capacitance values of 125 F/g in KOH and 101 F/g in [C2 H5 ]4 NBF4 are determined by the electrolyte type used and the nature of salts and bases dissolved in it. The practical significance of the obtained results is the application of the developed methods for obtaining carbon material with developed micro- and mesoporous structures and improved physicochemical properties.","PeriodicalId":231412,"journal":{"name":"Технология и конструирование в электронной аппаратуре","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116765759","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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