Pub Date : 1900-01-01DOI: 10.15222/tkea2021.1-2.39
S. Plaksin, M. Y. Zhytnyk, R. Levchenko, S. Y. Ostapovska
When an electrochemical energy storage is used as part of an energy system, the influence of external factors significantly changes its basic parameters: its available capacity decreases, while its internal resistance and self-discharge increase, which reduces the lifespan of the storage and disrupts the normal functioning of the energy system as a whole. Improving the performance of the energy storage is an urgent challenge, and one way to address it is to efficiently monitor the storage’s status. The purpose of this study was to increase the efficiency of using electrochemical energy storages by choosing a proper control method according to operating conditions of the storage. The conducted analytical overview of the existing methods of monitoring electrochemical energy storages allowed systematizing and classifying them by the controlled parameters. It is shown that if the storage operates in dynamic modes, such as buffer, starter or main energy source mode, when connecting high-power resistors, it is necessary to take into account such parameters as activation resistance and activation capacitance characterizing storage’s resistance capabilities and presenting valuable information for choosing the method of storage control. The paper demonstrates that in dynamic operation modes it is necessary to use impulse methods of storage control, which allow for efficient monitoring taking into account activation parameters. The authors offer practical recommendations on choosing a method of storage control depending on its operation mode. Pulse multistage potentiostatic and single-pulse galvanostatic control methods meet such requirements the most when the storage is operating in dynamic modes. The preference is given to the single-pulse galvanostatic method developed by the authors, it being relatively simple to implement and sufficiently informative for practical purposes, which facilitates the automation of the control process. Experimental results on controlling the electrochemical energy storage operating in dynamic modes obtained using the method developed by the authors confirm its efficiency.
{"title":"Methods of electrochemical energy storage control: classification and aspects of implementing","authors":"S. Plaksin, M. Y. Zhytnyk, R. Levchenko, S. Y. Ostapovska","doi":"10.15222/tkea2021.1-2.39","DOIUrl":"https://doi.org/10.15222/tkea2021.1-2.39","url":null,"abstract":"When an electrochemical energy storage is used as part of an energy system, the influence of external factors significantly changes its basic parameters: its available capacity decreases, while its internal resistance and self-discharge increase, which reduces the lifespan of the storage and disrupts the normal functioning of the energy system as a whole. Improving the performance of the energy storage is an urgent challenge, and one way to address it is to efficiently monitor the storage’s status. The purpose of this study was to increase the efficiency of using electrochemical energy storages by choosing a proper control method according to operating conditions of the storage. \u0000The conducted analytical overview of the existing methods of monitoring electrochemical energy storages allowed systematizing and classifying them by the controlled parameters. It is shown that if the storage operates in dynamic modes, such as buffer, starter or main energy source mode, when connecting high-power resistors, it is necessary to take into account such parameters as activation resistance and activation capacitance characterizing storage’s resistance capabilities and presenting valuable information for choosing the method of storage control. The paper demonstrates that in dynamic operation modes it is necessary to use impulse methods of storage control, which allow for efficient monitoring taking into account activation parameters. The authors offer practical recommendations on choosing a method of storage control depending on its operation mode. Pulse multistage potentiostatic and single-pulse galvanostatic control methods meet such requirements the most when the storage is operating in dynamic modes.\u0000The preference is given to the single-pulse galvanostatic method developed by the authors, it being relatively simple to implement and sufficiently informative for practical purposes, which facilitates the automation of the control process. Experimental results on controlling the electrochemical energy storage operating in dynamic modes obtained using the method developed by the authors confirm its efficiency.","PeriodicalId":231412,"journal":{"name":"Технология и конструирование в электронной аппаратуре","volume":"146 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123318776","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.15222/tkea2019.1-2.03
V. Antoniuk, A. Drozd, J. Drozd, H. Stepova
The authors consider the checkability issues of FPGA designs and analyze the logical (structural and structurally functional) checkability. The paper describes the features of safety-related systems that can operate in normal and emergency mode. In these modes different input data are fed to the inputs of the digital circuits of the components, which leads to an expansion of the structurally functional checkability to dual-mode. The paper shows the problem of hidden faults, which can accumulate in the normal mode and manifest themselves in the emergency mode. The features of checkability of circuits in FPGA projects and its advantages important for critical applications are noted. The limitations of the logical checkability of the circuits are analyzed, as well as the possibility and expediency of expanding the traditionally used logical form to power usage checkability. The study defines the checkability of circuits in FPGA projects by power usage and determines its subtypes — lower and upper checkability. Lower checkability is important in identifying faults that lead to lower power usage, for example, in chains of common signals, such as reset or synchronization. The upper one is important for identifying faults that increase the level of power usage, for example, short-circuits. The authors identify the possibility of assessing the power usage checkability of FPGA projects in terms of the power dissipation or power consumption and indicate the possibility of developing upper checkability by the dissipated power. The features of power dissipation monitoring for FPGA projects are noted. An analytical assessment for the checkability of circuits for short-circuit faults, which increase the dissipated power, and the organization of monitoring its excess are proposed. Experiments in Quartus Prime Lite CAD to assess upper checkability by power dissipation of scalable shift register circuits, that are implemented in FPGA projects, based on default IP-Core and a custom VHDL description, are carried out. The paper presents experimental results, that estimate the dependence of the checkability level on the area, occupied by the circuit on the FPGA chip.
作者考虑了FPGA设计的可检性问题，分析了逻辑(结构和结构功能)的可检性。本文介绍了可在正常和紧急模式下运行的安全相关系统的特点。在这些模式中，不同的输入数据被馈送到元件的数字电路的输入端，这导致结构功能可检查性扩展到双模式。本文提出了故障隐藏问题，故障隐藏在正常模式下会积累，在紧急模式下会显现出来。指出了FPGA工程中电路可检性的特点及其在关键应用中的重要优势。分析了电路逻辑可检性的局限性，以及将传统逻辑形式扩展为电量可检性的可能性和方便性。本研究根据功耗定义了FPGA项目中电路的可检性，并确定了其子类型——下检性和上检性。较低的可检查性对于识别导致较低功耗的故障非常重要，例如，在公共信号链中，例如重置或同步。上一层是重要的故障，用于识别增加电力使用水平的故障，如短路。作者确定了从功耗或功耗方面评估FPGA项目的功耗可检性的可能性，并指出了通过功耗开发上层可检性的可能性。指出了FPGA工程中功耗监测的特点。提出了增加耗散功率的短路故障可检性的分析评估方法，以及对短路故障的监测组织。在Quartus Prime Lite CAD中进行了基于默认ip核和自定义VHDL描述的FPGA项目中实现的可扩展移位寄存器电路的功耗评估上层可检查性的实验。本文给出了在FPGA芯片上估计可检性等级与电路占用面积的依赖关系的实验结果。
{"title":"Checkability of the circuits in FPGA designs according to power dissipation","authors":"V. Antoniuk, A. Drozd, J. Drozd, H. Stepova","doi":"10.15222/tkea2019.1-2.03","DOIUrl":"https://doi.org/10.15222/tkea2019.1-2.03","url":null,"abstract":"The authors consider the checkability issues of FPGA designs and analyze the logical (structural and structurally functional) checkability. The paper describes the features of safety-related systems that can operate in normal and emergency mode. In these modes different input data are fed to the inputs of the digital circuits of the components, which leads to an expansion of the structurally functional checkability to dual-mode. The paper shows the problem of hidden faults, which can accumulate in the normal mode and manifest themselves in the emergency mode. The features of checkability of circuits in FPGA projects and its advantages important for critical applications are noted. \u0000The limitations of the logical checkability of the circuits are analyzed, as well as the possibility and expediency of expanding the traditionally used logical form to power usage checkability. The study defines the checkability of circuits in FPGA projects by power usage and determines its subtypes — lower and upper checkability.\u0000Lower checkability is important in identifying faults that lead to lower power usage, for example, in chains of common signals, such as reset or synchronization. The upper one is important for identifying faults that increase the level of power usage, for example, short-circuits. The authors identify the possibility of assessing the power usage checkability of FPGA projects in terms of the power dissipation or power consumption and indicate the possibility of developing upper checkability by the dissipated power. The features of power dissipation monitoring for FPGA projects are noted. \u0000An analytical assessment for the checkability of circuits for short-circuit faults, which increase the dissipated power, and the organization of monitoring its excess are proposed. Experiments in Quartus Prime Lite CAD to assess upper checkability by power dissipation of scalable shift register circuits, that are implemented in FPGA projects, based on default IP-Core and a custom VHDL description, are carried out. The paper presents experimental results, that estimate the dependence of the checkability level on the area, occupied by the circuit on the FPGA chip.","PeriodicalId":231412,"journal":{"name":"Технология и конструирование в электронной аппаратуре","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123531119","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.15222/tkea2021.1-2.10
N. Karushkin
Advances in the development of ultrahigh-frequency semiconductor electronics open wide opportunities for developing optimal schemes and designs of microwave power sources in the millimeter wavelength range providing high stability of the frequency and electromagnetic oscillation phase. Synchronized diode generators used in transmit/receive module for active phased array antennas, coherent low-power radar stations, etc. show great promise. The mode of external synchronization of semiconductor generators allows effectively implementing the task of creating output stages of the transmitters with high gain factor, low frequency noise and an output power level corresponding to the maximum power mode. This article presents the first of two parts of the study, which summarizes the results achieved so far in the development of synchronized oscillators based on impact ionization avalanche transit-time (IMPATT) diodes. The first part presents the electrodynamic designs of the oscillators, which are synchronized with an external source of microwave oscillations and contain a resonant oscillating system with a silicon IMPATT diode. The silicon two-drift IMPATT diode was chosen as an active element due to the fact that its use allows reaching significant levels of pulsed microwave power – an order of magnitude higher than those of the most well-known HEMT and pHEMT transistors in the millimeter wavelength range. It is shown that to reduce losses, the oscillating system should be made in the form of a radial resonator with a diode casing, which has distributed parameters. This eliminates the use of additional reactive inhomogeneities in the initial cross-section of the waveguide section of the generator. Due to the low quality factor of the resonant casing of the diode, the generalized quality factor of the microwave circuit takes the minimum value required to implement a stable generator synchronization process in the millimeter wavelength range. The second part of the work will be devoted to synchronized pulse generators with an output power of 20–150 W.
{"title":"Synchronization of pulsed and continuous-wave IMPATT oscillators in the millimeter wavelength range. Part 1. Generator designs and a generalized model of their external signal synchronization","authors":"N. Karushkin","doi":"10.15222/tkea2021.1-2.10","DOIUrl":"https://doi.org/10.15222/tkea2021.1-2.10","url":null,"abstract":"Advances in the development of ultrahigh-frequency semiconductor electronics open wide opportunities for developing optimal schemes and designs of microwave power sources in the millimeter wavelength range providing high stability of the frequency and electromagnetic oscillation phase. Synchronized diode generators used in transmit/receive module for active phased array antennas, coherent low-power radar stations, etc. show great promise. The mode of external synchronization of semiconductor generators allows effectively implementing the task of creating output stages of the transmitters with high gain factor, low frequency noise and an output power level corresponding to the maximum power mode.\u0000This article presents the first of two parts of the study, which summarizes the results achieved so far in the development of synchronized oscillators based on impact ionization avalanche transit-time (IMPATT) diodes. The first part presents the electrodynamic designs of the oscillators, which are synchronized with an external source of microwave oscillations and contain a resonant oscillating system with a silicon IMPATT diode. The silicon two-drift IMPATT diode was chosen as an active element due to the fact that its use allows reaching significant levels of pulsed microwave power – an order of magnitude higher than those of the most well-known HEMT and pHEMT transistors in the millimeter wavelength range. It is shown that to reduce losses, the oscillating system should be made in the form of a radial resonator with a diode casing, which has distributed parameters. This eliminates the use of additional reactive inhomogeneities in the initial cross-section of the waveguide section of the generator. Due to the low quality factor of the resonant casing of the diode, the generalized quality factor of the microwave circuit takes the minimum value required to implement a stable generator synchronization process in the millimeter wavelength range.\u0000The second part of the work will be devoted to synchronized pulse generators with an output power of 20–150 W.","PeriodicalId":231412,"journal":{"name":"Технология и конструирование в электронной аппаратуре","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123781618","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.15222/tkea2022.1-3.03
A. Ivanchenko, A. Tonkoshkur
Recently, the combined two-layer structure based on varistor ceramics and polymer posistor nanocomposites with carbon filler (known as PolySwitch resettable fuses) has been seen as one of the promising elements for protecting electrical circuits from long-term overvoltages. The varistor and posistor layers are in thermal contact. The main functional property of such a structure is a sharp increase (by several orders of magnitude) in the electrical resistance of the posistor nanocomposite layer during the transfer of thermal energy from the varistor layer heated by overvoltage. Detailed information about the behavior of such combined varistor-posistor structures under different conditions, particularly in different temperature conditions, is necessary for the effective technical application of such structures as electrothermal overvoltage limiters. This paper offers research results on the effect of ambient temperature on the electrical characteristics of such voltage limiters. Structures based on metal oxide ceramics used in the production of serial varistors VCR 14D and a posistor nanocomposite for FRX-type PPTC fuses were used in the experiments of this study. It has been established that with an increase in the ambient temperature, the temperature and output voltage of such a device change insignificantly in the limitation region, while the current and power dissipation of the layers significantly decrease. At a fixed ambient temperature, the total power dissipated by the varistor and posistor layers practically does not change in the range of input voltage limitation. The dependence of the power dissipated by the varistor layer on the input voltage is identical to the analogous dependence of the current, and the power dissipation of the posistor layer tends to increase.
{"title":"Influence of ambient temperature on electrical properties of varistor-positor structure","authors":"A. Ivanchenko, A. Tonkoshkur","doi":"10.15222/tkea2022.1-3.03","DOIUrl":"https://doi.org/10.15222/tkea2022.1-3.03","url":null,"abstract":"Recently, the combined two-layer structure based on varistor ceramics and polymer posistor nanocomposites with carbon filler (known as PolySwitch resettable fuses) has been seen as one of the promising elements for protecting electrical circuits from long-term overvoltages. The varistor and posistor layers are in thermal contact. The main functional property of such a structure is a sharp increase (by several orders of magnitude) in the electrical resistance of the posistor nanocomposite layer during the transfer of thermal energy from the varistor layer heated by overvoltage. Detailed information about the behavior of such combined varistor-posistor structures under different conditions, particularly in different temperature conditions, is necessary for the effective technical application of such structures as electrothermal overvoltage limiters. This paper offers research results on the effect of ambient temperature on the electrical characteristics of such voltage limiters. Structures based on metal oxide ceramics used in the production of serial varistors VCR 14D and a posistor nanocomposite for FRX-type PPTC fuses were used in the experiments of this study. It has been established that with an increase in the ambient temperature, the temperature and output voltage of such a device change insignificantly in the limitation region, while the current and power dissipation of the layers significantly decrease. At a fixed ambient temperature, the total power dissipated by the varistor and posistor layers practically does not change in the range of input voltage limitation. The dependence of the power dissipated by the varistor layer on the input voltage is identical to the analogous dependence of the current, and the power dissipation of the posistor layer tends to increase.","PeriodicalId":231412,"journal":{"name":"Технология и конструирование в электронной аппаратуре","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125427964","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.15222/TKEA2019.5-6.16
K. P. Rao, R. Vani, P. Hunagund
This article demonstrates the alleviation of mutual coupling of a simple and low-cost four-element microstrip array antenna by loading I-shaped slot-type electromagnetic band gap structure in the ground plane. FR-4 glass epoxy is used as dielectric substrate. Moreover, the proposed array antenna shows a better performance in terms of multi-band resonance. The antenna is resonating at four frequencies and a virtual size reduction of 78.48% is obtained. The designed array antenna possesses directional radiation properties. Mentor Graphics IE3D software is used to design and simulate the designed antennas and the measured results are obtained using vector network analyser.
{"title":"Mitigation of mutual coupling in microstrip antenna arrays","authors":"K. P. Rao, R. Vani, P. Hunagund","doi":"10.15222/TKEA2019.5-6.16","DOIUrl":"https://doi.org/10.15222/TKEA2019.5-6.16","url":null,"abstract":"This article demonstrates the alleviation of mutual coupling of a simple and low-cost four-element microstrip array antenna by loading I-shaped slot-type electromagnetic band gap structure in the ground plane. FR-4 glass epoxy is used as dielectric substrate. Moreover, the proposed array antenna shows a better performance in terms of multi-band resonance. The antenna is resonating at four frequencies and a virtual size reduction of 78.48% is obtained. The designed array antenna possesses directional radiation properties. Mentor Graphics IE3D software is used to design and simulate the designed antennas and the measured results are obtained using vector network analyser.","PeriodicalId":231412,"journal":{"name":"Технология и конструирование в электронной аппаратуре","volume":"64 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131264632","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.15222/tkea2022.1-3.50
P. Gorskyi
Resource tests allowed finding that the relative degradation of output power and efficiency of thermoelectric generator modules is not subject to linear law. This means that the distribution law for the failure time of such modules does not «copy» the distribution of their initial parameters, i.e. is neither normal nor logarithmically normal. Therefore, the aim of this paper is to find or select from among the existing such a failure time distribution law, which would clearly take into account the scattering of the rates of relative degradation of the parameters of thermoelectric generator modules. The paper substantiates the need to use diffusion-nonmonotonic failure time distribution for processing the results of resource tests of thermoelectric generator modules in order to determine their standardized reliability indicators and relative errors of the obtained values. It is proposed to determine the point estimates of the parameters of the law, namely the average failure time and the parameter of variation of the rate of degradation processes not by formulas obtained by the method of maximum likelihood, but by smoothing the probability of failure-free operation obtained by tests. The least squares method and Newton's method are used. Estimates obtained by the method of maximum likelihood serve as an initial approximation for Newton's method. This allows achieving significantly less error in determining standardized reliability indicators than when using the method of maximum likelihood.
{"title":"Particular aspects of determining reliability indicators of thermoelectric generator modules using experimental data","authors":"P. Gorskyi","doi":"10.15222/tkea2022.1-3.50","DOIUrl":"https://doi.org/10.15222/tkea2022.1-3.50","url":null,"abstract":"Resource tests allowed finding that the relative degradation of output power and efficiency of thermoelectric generator modules is not subject to linear law. This means that the distribution law for the failure time of such modules does not «copy» the distribution of their initial parameters, i.e. is neither normal nor logarithmically normal. Therefore, the aim of this paper is to find or select from among the existing such a failure time distribution law, which would clearly take into account the scattering of the rates of relative degradation of the parameters of thermoelectric generator modules. The paper substantiates the need to use diffusion-nonmonotonic failure time distribution for processing the results of resource tests of thermoelectric generator modules in order to determine their standardized reliability indicators and relative errors of the obtained values. It is proposed to determine the point estimates of the parameters of the law, namely the average failure time and the parameter of variation of the rate of degradation processes not by formulas obtained by the method of maximum likelihood, but by smoothing the probability of failure-free operation obtained by tests. The least squares method and Newton's method are used. Estimates obtained by the method of maximum likelihood serve as an initial approximation for Newton's method. This allows achieving significantly less error in determining standardized reliability indicators than when using the method of maximum likelihood.","PeriodicalId":231412,"journal":{"name":"Технология и конструирование в электронной аппаратуре","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126945286","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.15222/tkea2021.3-4.17
M. F. Karushkin
This is the second part of the two-part article, which summarizes the state-of-the-art results in the development of synchronized oscillators based on IMPATT (IMPact ionization Avalanche Transit-Time) diodes. The first part of the paper presented the electrodynamic design of oscillators, which contain a resonant oscillatory system with silicon IMPATT diodes and are synchronized by an external source of microwave oscillations. The second part of the paper considers the methods for stabilizing the parameters of IMPATT oscillators, which make it possible to create coherent power sources in the millimeter wavelength range. The specifics of pulse generators lies in the change in frequency within the microwave pulse relative to the change in temperature, which leads to a change in the impedance of the diode and thus to a phase change with respect to the synchronizing signal. Phase modulation is reduced or completely eliminated (which is necessary to ensure the coherence of the microwave transmitter) by using current compensation, i.e., by using the control current pulse with a special shape. The study demonstrates the expediency of introducing additional heating of the semiconductor structure of the IMPATT diode, which allows the initial temperature of the IMPATT diode in the region of the leading edge of each pulse to remain virtually constant and independent of the ambient temperature. Using these methods on silicon double-drift IMPATT diodes allowed creating synchronized oscillators with high frequency stability and an output power level from 20 to 150 W, which have a high degree of coherence in the synchronization mode with an external signal. The paper also presents the designs and parameters of coherent microwave power sources in the short-wave part of the millimeter wavelength range using the nonlinear properties of the IMPATT diodes in the radio-pulse conversion mode. This mode makes it possible to provide the output power level of the signal at the n-th harmonic Pout ≈1/n, which significantly exceeds the achieved characteristics of the frequency multipliers with charge accumulation, where Pout ≈ 1/n2. The output power of such devices is achieved at the level of 50–20 mW in the 75–180 GHz frequency range with a frequency multiplication factor of 1–15.
{"title":"Synchronization of pulsed and continuous-wave IMPATT oscillators in the millimeter wavelength range. Part 2. Stabilizing microwave parameters of synchronized generators","authors":"M. F. Karushkin","doi":"10.15222/tkea2021.3-4.17","DOIUrl":"https://doi.org/10.15222/tkea2021.3-4.17","url":null,"abstract":"This is the second part of the two-part article, which summarizes the state-of-the-art results in the development of synchronized oscillators based on IMPATT (IMPact ionization Avalanche Transit-Time) diodes. The first part of the paper presented the electrodynamic design of oscillators, which contain a resonant oscillatory system with silicon IMPATT diodes and are synchronized by an external source of microwave oscillations.\u0000The second part of the paper considers the methods for stabilizing the parameters of IMPATT oscillators, which make it possible to create coherent power sources in the millimeter wavelength range. The specifics of pulse generators lies in the change in frequency within the microwave pulse relative to the change in temperature, which leads to a change in the impedance of the diode and thus to a phase change with respect to the synchronizing signal. Phase modulation is reduced or completely eliminated (which is necessary to ensure the coherence of the microwave transmitter) by using current compensation, i.e., by using the control current pulse with a special shape.\u0000The study demonstrates the expediency of introducing additional heating of the semiconductor structure of the IMPATT diode, which allows the initial temperature of the IMPATT diode in the region of the leading edge of each pulse to remain virtually constant and independent of the ambient temperature. Using these methods on silicon double-drift IMPATT diodes allowed creating synchronized oscillators with high frequency stability and an output power level from 20 to 150 W, which have a high degree of coherence in the synchronization mode with an external signal.\u0000The paper also presents the designs and parameters of coherent microwave power sources in the short-wave part of the millimeter wavelength range using the nonlinear properties of the IMPATT diodes in the radio-pulse conversion mode. This mode makes it possible to provide the output power level of the signal at the n-th harmonic Pout ≈1/n, which significantly exceeds the achieved characteristics of the frequency multipliers with charge accumulation, where Pout ≈ 1/n2. The output power of such devices is achieved at the level of 50–20 mW in the 75–180 GHz frequency range with a frequency multiplication factor of 1–15.","PeriodicalId":231412,"journal":{"name":"Технология и конструирование в электронной аппаратуре","volume":"64 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114505924","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.15222/tkea2022.1-3.39
V. Kolbunov, O. S. Tonkoshkur, O. V. Vasheruk
The metal-semiconductor phase transition (MSPT) in vanadium dioxide is accompanied by an abrupt change in a number of physical parameters of this compound, in particular the resistivity. Of great interest are glass-ceramic materials, which are synthesized on the basis of vanadium dioxide and glass of the V2O5 — P2O5 system. Electronic devices based on such materials can operate at high electric currents. This allows you to create elements known as threshold switches and critical thermistors. This paper presents the results of the study of electrical conductivity and microstructure of thermosensitive glass-ceramics synthesized on the basis of fine crystalline VO2 with crystal sizes of 5—10 μm and on the basis of nanocrystalline VO2 (crystal size 70—100 nm). In general, microstructures are typical for such materials and contain crystals of vanadium dioxide, inclusions of vanadium phosphate glass and other components of glass ceramics. There are also pores in the microstructure of the samples. The temperature dependences of the resistivity for both types of glass-ceramics have a sharp change in the resistivity by 1.5—2 decades in the region of 70°C, which is characteristic of the MSPT in vanadium dioxide. For both types of glass-ceramics, a comparative study of the resistivity during cycling through the phase transition temperature in VO2 was performed. Glass-ceramic samples synthesized on the basis of nanocrystalline VO2 showed much more stable behavior. This allows creating a stable glass-ceramic material for thermistors with a critical temperature of about 70°C.
{"title":"Electrical conductivity of thermosensitive glass-ceramics based on nanosized vanadium dioxide","authors":"V. Kolbunov, O. S. Tonkoshkur, O. V. Vasheruk","doi":"10.15222/tkea2022.1-3.39","DOIUrl":"https://doi.org/10.15222/tkea2022.1-3.39","url":null,"abstract":"The metal-semiconductor phase transition (MSPT) in vanadium dioxide is accompanied by an abrupt change in a number of physical parameters of this compound, in particular the resistivity. Of great interest are glass-ceramic materials, which are synthesized on the basis of vanadium dioxide and glass of the V2O5 — P2O5 system. Electronic devices based on such materials can operate at high electric currents. This allows you to create elements known as threshold switches and critical thermistors. This paper presents the results of the study of electrical conductivity and microstructure of thermosensitive glass-ceramics synthesized on the basis of fine crystalline VO2 with crystal sizes of 5—10 μm and on the basis of nanocrystalline VO2 (crystal size 70—100 nm). In general, microstructures are typical for such materials and contain crystals of vanadium dioxide, inclusions of vanadium phosphate glass and other components of glass ceramics. There are also pores in the microstructure of the samples. The temperature dependences of the resistivity for both types of glass-ceramics have a sharp change in the resistivity by 1.5—2 decades in the region of 70°C, which is characteristic of the MSPT in vanadium dioxide. For both types of glass-ceramics, a comparative study of the resistivity during cycling through the phase transition temperature in VO2 was performed. Glass-ceramic samples synthesized on the basis of nanocrystalline VO2 showed much more stable behavior. This allows creating a stable glass-ceramic material for thermistors with a critical temperature of about 70°C.","PeriodicalId":231412,"journal":{"name":"Технология и конструирование в электронной аппаратуре","volume":"194 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114235715","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.15222/tkea2022.4-6.03
V. Lapshuda, Y. Linevych, M. Dusheiko, V. Koval, V. Barbash
Nanocellulose (NC) is a promising modern material suitable for use in electronics. This material is biodegradable, and thus, if used in electronic devices, will not require disposal and will decompose naturally. An interesting feature of nanocellulose is its hygroscopicity, which makes it applicable for the manufacture of humidity sensors. In this study, we synthesized nanocellulose-based humidity sensors with a weight of humidity-sensitive layer from 0.3 to 3.6 mg. The following static and dynamic characteristics of the obtained sensors were measured: sensitivity, response, hysteresis, repeatability, response and recovery time, short and long-term stability. It was determined that at a frequency of 100 Hz, the maximum sensitivity was observed in the sample with NC mass of 1.8 mg (0.215 (%RH)–1), and at 1000 Hz, in the sample with NC mass of 0.5 mg (0.155 (%RH)–1). Thus, with increasing frequency of test signal, the sensitivity of the sensors decreases. These same samples (with NC mass of 1.8 mg at 100 Hz and 0.5 mg at 1000 Hz) showed the highest values of sensor response — 1.99‧106 and 5.43‧104, respectively. Same as with sensitivity, when frequency increases, sensor response decreases. For both frequencies, the sample with NC mass of 0.4 mg showed the lowest value of hysteresis — 0.04 and 0.12% at 100 and 1000 Hz, respectively. It was also found that the sample with NC mass of 0.3 mg has the shortest response time of 42 s. With increasing of NC weight, the response time increases about 20-fold and recovery time — by 2 orders of magnitude. The highest short-term stability was demonstrated by the sample with NC weight of 0.5 mg: deviations from the arithmetic mean were 8 and 7.8% at test frequencies of 100 and 1000 Hz, respectively. The worst short-term stability was demonstrated by the sample with NC mass of 3.3 mg with the deviation of 31.7 and 39.2% at the same frequencies. It was also determined that such sensors need to be further researched to improve long-term stability. Therefore, the measurement results demonstrate that, in terms of sensitivity and response, the optimal mass of NC film is 1.8 mg at the test frequency of 100 Hz. This sample also shows the best long-term stability. From the point of view of recoverability and sensor speed, the sample with NC weight of 0.3—0.5 mg is preferable.
{"title":"Resistive humidity sensors based on nanocellulose films for biodegradable electronics","authors":"V. Lapshuda, Y. Linevych, M. Dusheiko, V. Koval, V. Barbash","doi":"10.15222/tkea2022.4-6.03","DOIUrl":"https://doi.org/10.15222/tkea2022.4-6.03","url":null,"abstract":"Nanocellulose (NC) is a promising modern material suitable for use in electronics. This material is biodegradable, and thus, if used in electronic devices, will not require disposal and will decompose naturally. An interesting feature of nanocellulose is its hygroscopicity, which makes it applicable for the manufacture of humidity sensors. In this study, we synthesized nanocellulose-based humidity sensors with a weight of humidity-sensitive layer from 0.3 to 3.6 mg. The following static and dynamic characteristics of the obtained sensors were measured: sensitivity, response, hysteresis, repeatability, response and recovery time, short and long-term stability. It was determined that at a frequency of 100 Hz, the maximum sensitivity was observed in the sample with NC mass of 1.8 mg (0.215 (%RH)–1), and at 1000 Hz, in the sample with NC mass of 0.5 mg (0.155 (%RH)–1). Thus, with increasing frequency of test signal, the sensitivity of the sensors decreases. These same samples (with NC mass of 1.8 mg at 100 Hz and 0.5 mg at 1000 Hz) showed the highest values of sensor response — 1.99‧106 and 5.43‧104, respectively. Same as with sensitivity, when frequency increases, sensor response decreases. For both frequencies, the sample with NC mass of 0.4 mg showed the lowest value of hysteresis — 0.04 and 0.12% at 100 and 1000 Hz, respectively. It was also found that the sample with NC mass of 0.3 mg has the shortest response time of 42 s. With increasing of NC weight, the response time increases about 20-fold and recovery time — by 2 orders of magnitude. The highest short-term stability was demonstrated by the sample with NC weight of 0.5 mg: deviations from the arithmetic mean were 8 and 7.8% at test frequencies of 100 and 1000 Hz, respectively. The worst short-term stability was demonstrated by the sample with NC mass of 3.3 mg with the deviation of 31.7 and 39.2% at the same frequencies. It was also determined that such sensors need to be further researched to improve long-term stability. \u0000Therefore, the measurement results demonstrate that, in terms of sensitivity and response, the optimal mass of NC film is 1.8 mg at the test frequency of 100 Hz. This sample also shows the best long-term stability. From the point of view of recoverability and sensor speed, the sample with NC weight of 0.3—0.5 mg is preferable.","PeriodicalId":231412,"journal":{"name":"Технология и конструирование в электронной аппаратуре","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114299674","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.15222/tkea2020.1-2.08
A. Sadchenko, O. Kushnirenko, E. Koshelev
Pulsed laser rangefinders prove to be cost-effective and practical devices when used at distances of several tens of kilometers due to their compactness, portability and energy efficiency. However, the measurement accuracy is significantly reduced by the presence of pulsed interference affecting the input of the optical receiver both during the sensing period and when the reflected signal is being received. Using the algorithms with the accumulation and subsequent processing of the results of several successive measurements reduces the speed of decision-making and does not guarantee the convergence of the results to the real value of the distance. The paper proposes a structural diagram of a laser rangefinder with the ability to detect pulsed interference in the range interval and correct errors that occur in the structure of the signal reflected from the target. The basis of the rangefinder circuit is a logical consistent filter, the structure of which contains multipliers (multiplication operations). The following requirements were formulated for the structure of the probe signal: — the first element should always be set to +1 to synchronize the receiver decider; — the weight of the coding sequence is equal to half its length; — the length of the coding sequence is even. Based on the requirements for coding sequences, the optimal structures of binary probing signals of length 8 were found, providing the best corrective ability. Comparison of the correlation properties of the found sequences and the sequences that are constructed using the Walsh functions showed the advantage of the optimal sequences by the criterion of the minimum level of the ACF side lobes. The simulation of the rangefinder under pulsed noise conditions has shown that the logical filter is advisable to use for those cases when the duration of the obstacle does not exceed 1/3 of the duration of the probing signal.
{"title":"Anti-interference pulsed laser ranging system","authors":"A. Sadchenko, O. Kushnirenko, E. Koshelev","doi":"10.15222/tkea2020.1-2.08","DOIUrl":"https://doi.org/10.15222/tkea2020.1-2.08","url":null,"abstract":"Pulsed laser rangefinders prove to be cost-effective and practical devices when used at distances of several tens of kilometers due to their compactness, portability and energy efficiency. However, the measurement accuracy is significantly reduced by the presence of pulsed interference affecting the input of the optical receiver both during the sensing period and when the reflected signal is being received. Using the algorithms with the accumulation and subsequent processing of the results of several successive measurements reduces the speed of decision-making and does not guarantee the convergence of the results to the real value of the distance.\u0000The paper proposes a structural diagram of a laser rangefinder with the ability to detect pulsed interference in the range interval and correct errors that occur in the structure of the signal reflected from the target. The basis of the rangefinder circuit is a logical consistent filter, the structure of which contains multipliers (multiplication operations). \u0000The following requirements were formulated for the structure of the probe signal:\u0000— the first element should always be set to +1 to synchronize the receiver decider;\u0000— the weight of the coding sequence is equal to half its length;\u0000— the length of the coding sequence is even.\u0000Based on the requirements for coding sequences, the optimal structures of binary probing signals of length 8 were found, providing the best corrective ability.\u0000Comparison of the correlation properties of the found sequences and the sequences that are constructed using the Walsh functions showed the advantage of the optimal sequences by the criterion of the minimum level of the ACF side lobes.\u0000The simulation of the rangefinder under pulsed noise conditions has shown that the logical filter is advisable to use for those cases when the duration of the obstacle does not exceed 1/3 of the duration of the probing signal.","PeriodicalId":231412,"journal":{"name":"Технология и конструирование в электронной аппаратуре","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115923567","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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