Pub Date : 1900-01-01DOI: 10.15222/tkea2022.4-6.25
Oleksandr F. Bondarenko, O. P. Holubenko, O. Yama, A. Y. Zinchenko
When developing pulse converters, in order to ensure a low level of output current ripples, one should seek a compromise between the overall size of the elements and acceptable losses in them, while taking into account the dynamic characteristics of power sources as closed systems with feedback. Using multiphase pulse converters can help solve the said problem, but will not ensure a low level of output current ripples in a wide range of the duty cycle of the control pulses. This study aims to find a pulse converter topology capable of ensuring the reduction of the output current ripples, while maintaining the power and volume of the structure. The paper demonstrates the relevance of the study of pulse converters aimed at obtaining a low-ripple output current for powering sensitive loads and gives an overview of ways to reduce the ripples and the most common topologies of converters. The authors describe the results of the practical application of the developed experimental stand and analyze the obtained dependences of the output current ripples on the volumes of the power sections of the converters of different topologies under the same power and frequency. Recommendations are given for choosing the type of converter in each specific case in terms of reducing ripples.
{"title":"Pulse converters with reduced output current ripple","authors":"Oleksandr F. Bondarenko, O. P. Holubenko, O. Yama, A. Y. Zinchenko","doi":"10.15222/tkea2022.4-6.25","DOIUrl":"https://doi.org/10.15222/tkea2022.4-6.25","url":null,"abstract":"When developing pulse converters, in order to ensure a low level of output current ripples, one should seek a compromise between the overall size of the elements and acceptable losses in them, while taking into account the dynamic characteristics of power sources as closed systems with feedback. Using multiphase pulse converters can help solve the said problem, but will not ensure a low level of output current ripples in a wide range of the duty cycle of the control pulses. This study aims to find a pulse converter topology capable of ensuring the reduction of the output current ripples, while maintaining the power and volume of the structure. The paper demonstrates the relevance of the study of pulse converters aimed at obtaining a low-ripple output current for powering sensitive loads and gives an overview of ways to reduce the ripples and the most common topologies of converters. The authors describe the results of the practical application of the developed experimental stand and analyze the obtained dependences of the output current ripples on the volumes of the power sections of the converters of different topologies under the same power and frequency. Recommendations are given for choosing the type of converter in each specific case in terms of reducing ripples.","PeriodicalId":231412,"journal":{"name":"Технология и конструирование в электронной аппаратуре","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131572551","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.15222/tkea2022.4-6.17
А. V. Sadchenko, O. Kushnirenko, N. Kushnirenko, O. Sadchenko, O. Troyanskiy
ATmega series AVR microcontrollers (e.g., ATmega8A or ATmega16A) and ARM microcontrollers with a Cortex M3 core (e.g., STM32F103С8T6) are among the most popular controllers used in solving engineering problems related to servicing various fire and security alarm sensors and devices for metering household and industrial power consumption. At the same time, to transfer the data via a twisted pair or AC voltage network, it needs to be encoded using Manchester 1 or Manchester 2 code, and said AVR and ARM microcontroller units (MCU) contain no hardware encoder and decoder for the Manchester code. The study aimed at solving the engineering problem of implementing the codec (encoder-decoder) of the Manchester code based on the hardware interfaces of low-performance microcontrollers. The direct implementation of the encoding algorithm with the Manchester code using a purely software-driven approach significantly decreases the information transfer rate. At the same time, among the hardware interfaces of the MCU, there is always a serial universal asynchronous data transceiver (UART). However, the UART data transfer protocol is not generally suitable for Manchester encoding and, therefore, needs to be software adapted. In order to adapt the UART protocol to the conditions of Manchester encoding, the 8N1 mode is selected at the hardware level, which means 8 data bits, 1 stop and 1 start bit. The software implementation of the encoder consists in the fact that out of the total possible volume of 256 code combinations, 16 are selected that satisfy the Manchester 2 code, while the start and stop conditions for data bytes transmitted in a row also satisfy the structure of the Manchester code. To maximize the efficiency of the program code, all code words are stored in the memory of the MCU in such a way that their serial number corresponds to the decimal interpretation of 4 bits of the input data. The decoding of the received data is also performed as efficiently as possible using the decoding table. The implementation of the software and hardware codec of the Manchester code significantly expands the scope of popular AVR and ARM microcontrollers and reduces the cost of the finished product by excluding any additional units that perform the function of encoding and decoding the Manchester code.
{"title":"Implementation of Manchester codec for information transmission systems based on AVR and ARM architecture microcontrollers","authors":"А. V. Sadchenko, O. Kushnirenko, N. Kushnirenko, O. Sadchenko, O. Troyanskiy","doi":"10.15222/tkea2022.4-6.17","DOIUrl":"https://doi.org/10.15222/tkea2022.4-6.17","url":null,"abstract":"ATmega series AVR microcontrollers (e.g., ATmega8A or ATmega16A) and ARM microcontrollers with a Cortex M3 core (e.g., STM32F103С8T6) are among the most popular controllers used in solving engineering problems related to servicing various fire and security alarm sensors and devices for metering household and industrial power consumption. At the same time, to transfer the data via a twisted pair or AC voltage network, it needs to be encoded using Manchester 1 or Manchester 2 code, and said AVR and ARM microcontroller units (MCU) contain no hardware encoder and decoder for the Manchester code.\u0000The study aimed at solving the engineering problem of implementing the codec (encoder-decoder) of the Manchester code based on the hardware interfaces of low-performance microcontrollers.\u0000The direct implementation of the encoding algorithm with the Manchester code using a purely software-driven approach significantly decreases the information transfer rate. At the same time, among the hardware interfaces of the MCU, there is always a serial universal asynchronous data transceiver (UART). However, the UART data transfer protocol is not generally suitable for Manchester encoding and, therefore, needs to be software adapted.\u0000In order to adapt the UART protocol to the conditions of Manchester encoding, the 8N1 mode is selected at the hardware level, which means 8 data bits, 1 stop and 1 start bit. The software implementation of the encoder consists in the fact that out of the total possible volume of 256 code combinations, 16 are selected that satisfy the Manchester 2 code, while the start and stop conditions for data bytes transmitted in a row also satisfy the structure of the Manchester code.\u0000To maximize the efficiency of the program code, all code words are stored in the memory of the MCU in such a way that their serial number corresponds to the decimal interpretation of 4 bits of the input data. The decoding of the received data is also performed as efficiently as possible using the decoding table.\u0000The implementation of the software and hardware codec of the Manchester code significantly expands the scope of popular AVR and ARM microcontrollers and reduces the cost of the finished product by excluding any additional units that perform the function of encoding and decoding the Manchester code.","PeriodicalId":231412,"journal":{"name":"Технология и конструирование в электронной аппаратуре","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133239025","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.15222/tkea2022.4-6.39
Ye. O. Bahanov, S. Shutov, V. Tsybulenko, S. Levytskyi
The cost of thermophotovoltaic converters can be reduced by making substrates of amorphous materials, which do not have an orienting effect, such as glass or fused quartz, for obtaining thin polycrystalline GaSb layers. The study establishes the conditions for the crystallization of thin polycrystalline GaSb layers with grain size sufficient to produce efficient thermophotovoltaic converter structures on a non-orienting substrate made of fused quartz. The authors carry out a two-dimensional modeling of the initial nucleus growth to study how the crystallization conditions affect the shape of the grains. It is shown that the form of grain growth is not very sensitive to the initial nucleus size and cooling rate, but is rather sensitive to nucleus density on the surface. The paper provides an estimate of the average surface density of the new phase nuclei, which tend to grow, on substrate surfaces. When the temperature is increased, the surface concentration of nuclei grows, and the grain size decreases. It is determined that the selected range of grain surface density corresponds to the cultivation temperature range of 450—550°С. Thin polycrystalline GaSb layers are grown at 520°С with a cooling rate of 10°C/ min to a temperature of 400°C, using a method developed by us, which requires simple equipment and consists in the forced cooling of a thin layer of stibium in a gallium melt in a vacuum. The degree of crystallinity of the samples is estimated from the photoluminescence spectra at 77 K. The spectra show two emission bands: one at 796 meV and another, the predominant one, at 775 meV, which indicates the presence of a significant number of point defects and deviations from the stoichiometry of the obtained films. The studies performed on an interference microscope show that the obtained layers have good planarity and homogeneity, and the average grain size is up to 25 microns, which confirms the validity of the proposed models. This technology can be used to manufacture inexpensive infrared radiation converters and, in particular, thermophotovoltaic converters.
{"title":"Crystallization processes of thin polycrystalline layers of galium stybnide for thermophotovoltaic application","authors":"Ye. O. Bahanov, S. Shutov, V. Tsybulenko, S. Levytskyi","doi":"10.15222/tkea2022.4-6.39","DOIUrl":"https://doi.org/10.15222/tkea2022.4-6.39","url":null,"abstract":"The cost of thermophotovoltaic converters can be reduced by making substrates of amorphous materials, which do not have an orienting effect, such as glass or fused quartz, for obtaining thin polycrystalline GaSb layers. The study establishes the conditions for the crystallization of thin polycrystalline GaSb layers with grain size sufficient to produce efficient thermophotovoltaic converter structures on a non-orienting substrate made of fused quartz. The authors carry out a two-dimensional modeling of the initial nucleus growth to study how the crystallization conditions affect the shape of the grains. It is shown that the form of grain growth is not very sensitive to the initial nucleus size and cooling rate, but is rather sensitive to nucleus density on the surface. The paper provides an estimate of the average surface density of the new phase nuclei, which tend to grow, on substrate surfaces. When the temperature is increased, the surface concentration of nuclei grows, and the grain size decreases. It is determined that the selected range of grain surface density corresponds to the cultivation temperature range of 450—550°С. Thin polycrystalline GaSb layers are grown at 520°С with a cooling rate of 10°C/ min to a temperature of 400°C, using a method developed by us, which requires simple equipment and consists in the forced cooling of a thin layer of stibium in a gallium melt in a vacuum. The degree of crystallinity of the samples is estimated from the photoluminescence spectra at 77 K. The spectra show two emission bands: one at 796 meV and another, the predominant one, at 775 meV, which indicates the presence of a significant number of point defects and deviations from the stoichiometry of the obtained films.\u0000The studies performed on an interference microscope show that the obtained layers have good planarity and homogeneity, and the average grain size is up to 25 microns, which confirms the validity of the proposed models. This technology can be used to manufacture inexpensive infrared radiation converters and, in particular, thermophotovoltaic converters.","PeriodicalId":231412,"journal":{"name":"Технология и конструирование в электронной аппаратуре","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124103968","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.15222/tkea2019.5-6.08
A. D. Yegorov, V. Yegorov, S. Yegorov, I. Sinelnikov
The multipixel semiconductor light sensors are becoming more and more popular in the spectroscopy practice. But insufficient for the spectroscopy dynamic range and nonlinearity of such sensors are well known. The described experiment shows nonlinearity of the sensor starting from certain light level. The role of blooming effect is shown on different complex spectral reliefs. The aim of this work was to carry out comparative studies of the dynamic range of sensors depending on the presence of anti-blooming, as well as to develop ways to expand the dynamic range during spectrophotometric measurements. Based on common sense and the analysis of previous experiments it is reasonable to assume that registration of the same spectral region with bidirectional transportation of charges in CCD devices could give extra advantages for the following linearization. In order to investigate the problem, a camera was created that allows recording the same plots of the spectrum with pairs of detector lines with the opposite direction of charge transport in charge-coupled devices (CCD). The paper presents a description of the technical solutions used in the development of the camera and the results of measurements of real emission spectra. The methods for processing data recorded during such spectrum registering are proposed. The possibility of a significant expansion of the dynamic range in the field of large signals is shown. The results of the experiment prove the possibility of using the proposed method for linearization of over-illuminated spectral line images. The comparison of the non-linearity of several types of sensors with different anti-blooming capabilities was performed. The described technology may be used for developing multisensor CCD spectral cameras.
{"title":"Investigation of the possibility to compensate for the blooming effect in CCD optical spectral sensors","authors":"A. D. Yegorov, V. Yegorov, S. Yegorov, I. Sinelnikov","doi":"10.15222/tkea2019.5-6.08","DOIUrl":"https://doi.org/10.15222/tkea2019.5-6.08","url":null,"abstract":"The multipixel semiconductor light sensors are becoming more and more popular in the spectroscopy practice. But insufficient for the spectroscopy dynamic range and nonlinearity of such sensors are well known. The described experiment shows nonlinearity of the sensor starting from certain light level. The role of blooming effect is shown on different complex spectral reliefs. The aim of this work was to carry out comparative studies of the dynamic range of sensors depending on the presence of anti-blooming, as well as to develop ways to expand the dynamic range during spectrophotometric measurements. Based on common sense and the analysis of previous experiments it is reasonable to assume that registration of the same spectral region with bidirectional transportation of charges in CCD devices could give extra advantages for the following linearization.\u0000In order to investigate the problem, a camera was created that allows recording the same plots of the spectrum with pairs of detector lines with the opposite direction of charge transport in charge-coupled devices (CCD). The paper presents a description of the technical solutions used in the development of the camera and the results of measurements of real emission spectra. The methods for processing data recorded during such spectrum registering are proposed. The possibility of a significant expansion of the dynamic range in the field of large signals is shown.\u0000The results of the experiment prove the possibility of using the proposed method for linearization of over-illuminated spectral line images. The comparison of the non-linearity of several types of sensors with different anti-blooming capabilities was performed. \u0000The described technology may be used for developing multisensor CCD spectral cameras.","PeriodicalId":231412,"journal":{"name":"Технология и конструирование в электронной аппаратуре","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127845652","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.15222/tkea2019.5-6.43
A. Kondrik, G. Kovtun
Solid-state ionizing radiation detectors based on high-resistance semiconductors can be used to monitor the safety of nuclear reactors. High-resistance CdTe and CdZnTe have very good electrophysical and detector properties. The objective of this study was to use computer simulation to determine how impurities and structural defects, as well as their clusters, affect electrophysical and detector properties of Cd1-xZnxTe (0≤x≤0.3). The calculations were based on well-tested models, the reliability of which was confirmed when comparing simulation results with well-known experimental data. It has been established that deep donors with energy levels near the middle of the band gap considerably extend the area of the high-resistance state of CdTe and CdZnTe, which is suitable for the creation of radiation detectors. The capture and recombination of non-equilibrium charge carriers occurs at the deep levels of cadmium vacancies owing to the influence of Ti, V, Ge, Ni, and Sn impurities. For this reason, such impurities are considered to be harmful, noticeably reducing the efficiency of charge collection η in CdTe and CdZnTe detectors. The decrease of electron mobility in CdTe and CdZnTe can be caused by the distribution heterogeneity of impurities (impurity clusters).When concentration of harmful impurities Ti, V, Ni, Sn, Ge does not exceed the content of the "background", provided that the impurities are distributed over the crystal uniformly, it is possible to obtain high-resistance CdZnTe of an acceptable detector quality. The obtained results could help determining conditions for producing CdTe and CdZnTe materials of high detector quality.
{"title":"Influence of impurities and structural defects on electrophysical and detector properties of CdTe and CdZnTe","authors":"A. Kondrik, G. Kovtun","doi":"10.15222/tkea2019.5-6.43","DOIUrl":"https://doi.org/10.15222/tkea2019.5-6.43","url":null,"abstract":"Solid-state ionizing radiation detectors based on high-resistance semiconductors can be used to monitor the safety of nuclear reactors. High-resistance CdTe and CdZnTe have very good electrophysical and detector properties. The objective of this study was to use computer simulation to determine how impurities and structural defects, as well as their clusters, affect electrophysical and detector properties of Cd1-xZnxTe (0≤x≤0.3). The calculations were based on well-tested models, the reliability of which was confirmed when comparing simulation results with well-known experimental data. It has been established that deep donors with energy levels near the middle of the band gap considerably extend the area of the high-resistance state of CdTe and CdZnTe, which is suitable for the creation of radiation detectors. The capture and recombination of non-equilibrium charge carriers occurs at the deep levels of cadmium vacancies owing to the influence of Ti, V, Ge, Ni, and Sn impurities. For this reason, such impurities are considered to be harmful, noticeably reducing the efficiency of charge collection η in CdTe and CdZnTe detectors. The decrease of electron mobility in CdTe and CdZnTe can be caused by the distribution heterogeneity of impurities (impurity clusters).When concentration of harmful impurities Ti, V, Ni, Sn, Ge does not exceed the content of the \"background\", provided that the impurities are distributed over the crystal uniformly, it is possible to obtain high-resistance CdZnTe of an acceptable detector quality. The obtained results could help determining conditions for producing CdTe and CdZnTe materials of high detector quality.","PeriodicalId":231412,"journal":{"name":"Технология и конструирование в электронной аппаратуре","volume":"73 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127572459","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.15222/tkea2021.1-2.49
I. B. Petuhov
To improve the quality of ultrasonic wire and ribbon bonding, the author propose a methodology for stabilizing the bonding force by compensating the rigidity of ultrasonic transducer (UST) mount in the ultrasonic / thermosonic bonding cycle. The author analyze the construction of ultrasonic technological systems and factors affecting the stability of the bonding process. The bonding force is controlled by an electromagnetic unit based on a coil in the field of a constant magnet, the force being directly proportional to the flowing current in the coil. The rigidity of ultrasonic transducer mount was compensated by the data obtained during the preliminary calibration of the change in the mount force over the entire UST overrun range. The calibration in this case is performed with no current flowing through the coil. The force value can be picked up from a digital force sensor. The force values are simultaneously compared with the digitized signal of the deformation sensor. The obtained data is stored in the memory of the wire bonder. In the bonding cycle, after the moment of contact is determined, the drive unit moves the bonding head vertically by the value of a predetermined distance of approximately one diameter of the bonding wire. This causes the movable part of the UST mount to rise and the force to increase. This increase is compensated by the automatic reduction of the current in the electromagnetic coil, which allows maintaining the preset force at the specified level. The bonding force during bonding is compensated in the same way, with the difference that the vector of force compensation changes – the force should increase with an increase in the deformation of the bonding wire. The implementation of the proposed algorithm made it possible to improve the bonding force stabilization to 20% when bonding thick wire, as well as to improve bonding quality. The proposed solution is also applicable in other technological ultrasound bonding systems, including bonding wire with the diameter of <100 microns.
{"title":"Stabilization of bonding force during ultrasonic wire and ribbon bonding","authors":"I. B. Petuhov","doi":"10.15222/tkea2021.1-2.49","DOIUrl":"https://doi.org/10.15222/tkea2021.1-2.49","url":null,"abstract":"To improve the quality of ultrasonic wire and ribbon bonding, the author propose a methodology for stabilizing the bonding force by compensating the rigidity of ultrasonic transducer (UST) mount in the ultrasonic / thermosonic bonding cycle. The author analyze the construction of ultrasonic technological systems and factors affecting the stability of the bonding process. The bonding force is controlled by an electromagnetic unit based on a coil in the field of a constant magnet, the force being directly proportional to the flowing current in the coil. The rigidity of ultrasonic transducer mount was compensated by the data obtained during the preliminary calibration of the change in the mount force over the entire UST overrun range. The calibration in this case is performed with no current flowing through the coil. The force value can be picked up from a digital force sensor. The force values are simultaneously compared with the digitized signal of the deformation sensor. The obtained data is stored in the memory of the wire bonder.\u0000In the bonding cycle, after the moment of contact is determined, the drive unit moves the bonding head vertically by the value of a predetermined distance of approximately one diameter of the bonding wire. This causes the movable part of the UST mount to rise and the force to increase. This increase is compensated by the automatic reduction of the current in the electromagnetic coil, which allows maintaining the preset force at the specified level. The bonding force during bonding is compensated in the same way, with the difference that the vector of force compensation changes – the force should increase with an increase in the deformation of the bonding wire. The implementation of the proposed algorithm made it possible to improve the bonding force stabilization to 20% when bonding thick wire, as well as to improve bonding quality. The proposed solution is also applicable in other technological ultrasound bonding systems, including bonding wire with the diameter of <100 microns.","PeriodicalId":231412,"journal":{"name":"Технология и конструирование в электронной аппаратуре","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121970542","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.15222/tkea2021.3-4.09
V. Zavadsky, R. Kharchenko, S. Dranchuk, V. Tsatsko
The article presents the research results on a device for automatic measurement of the temperature stability of the output characteristics of voltage-to-frequency converters. The device can be used to measure mechanical stresses in the ship's hull. The main source of information on the state of the mechanical stress on the hull of the ship is the integrated monitoring system. Monitoring methods are based on measuring the frequency of the output signals from the sensors based on strain gages, which have a wide scatter of values for parameters and characteristics and depend on external factors. A possible solution to this problem is to use a device that would convert the analog sensor signal into a more noise-immune signal of another type, for example, voltage-to-frequency converter. It is for such systems based on synchronous integrated converters that the authors have developed a device for automatic measurement of the temperature stability of the output characteristics of frequency converters. Such device can measure the thermal stability of the convertor automatically, which makes it possible to analyze the effect of temperature on the output characteristics of the converter and to experimentally study the sensors in a wide range of operating temperatures (from room temperature to 70℃). The study of the thermal stability of the characteristics of such sensors made it possible to confirm the quality of its electronic components and to determine which parameters need to be adjusted. The device is a set of units, one of them being a control circuit based on the ATmega-16 RISC microcontroller. This design and the developed algorithm for the device operation makes it possible to determine the output frequency with a high accuracy (with a measurement time of 1 sec, the accuracy reaches 0.05%). The developed device allows finding the ways to increase the thermal stability of mechanical stress sensors based on integral converters.
{"title":"Device for investigating thermal stability of characteristics of voltage-to-frequiency converters","authors":"V. Zavadsky, R. Kharchenko, S. Dranchuk, V. Tsatsko","doi":"10.15222/tkea2021.3-4.09","DOIUrl":"https://doi.org/10.15222/tkea2021.3-4.09","url":null,"abstract":"The article presents the research results on a device for automatic measurement of the temperature stability of the output characteristics of voltage-to-frequency converters. The device can be used to measure mechanical stresses in the ship's hull. \u0000The main source of information on the state of the mechanical stress on the hull of the ship is the integrated monitoring system. Monitoring methods are based on measuring the frequency of the output signals from the sensors based on strain gages, which have a wide scatter of values for parameters and characteristics and depend on external factors. A possible solution to this problem is to use a device that would convert the analog sensor signal into a more noise-immune signal of another type, for example, voltage-to-frequency converter. It is for such systems based on synchronous integrated converters that the authors have developed a device for automatic measurement of the temperature stability of the output characteristics of frequency converters. \u0000Such device can measure the thermal stability of the convertor automatically, which makes it possible to analyze the effect of temperature on the output characteristics of the converter and to experimentally study the sensors in a wide range of operating temperatures (from room temperature to 70℃).\u0000The study of the thermal stability of the characteristics of such sensors made it possible to confirm the quality of its electronic components and to determine which parameters need to be adjusted. The device is a set of units, one of them being a control circuit based on the ATmega-16 RISC microcontroller. This design and the developed algorithm for the device operation makes it possible to determine the output frequency with a high accuracy (with a measurement time of 1 sec, the accuracy reaches 0.05%).\u0000The developed device allows finding the ways to increase the thermal stability of mechanical stress sensors based on integral converters.","PeriodicalId":231412,"journal":{"name":"Технология и конструирование в электронной аппаратуре","volume":"83 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122488819","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.15222/tkea2020.3-4.03
R. Akhmedov
The authors study the dependence of the shape of electromagnetic pulse received in near radiation zone of the antenna on the observation point. The paper discusses negative and positive effects of this phenomenon on the wireless impulse communication and presents a new method of information extraction form ultrawideband electromagnetic pulse, comparing it to the traditional way of signal processing. The method is based on modern deep learning technics and recurrent neural networks, namely physical long short-term memory. Moreover, the paper presents a concept of direct sequence ultrawideband (DS-UWB) impulse radio receiver based on a physical neural network. It is proposed to change the traditional way of radio signal processing and use a single neural network instead of a matched filter, a magnitude amplifier and a FPGA processor. The architecture of the physical neural network was designed with an intention to study the behavior of ultrawideband short pulse (UWB-SP) radio signal in near and far radiation zones. The applicability of the neural radio concept is proved by simulation of AWGN communication channel for multiuser environment and real time RX signal processing by the designed neural network. The paper contains the results of a numerical modeling of the radiation-reception process and illustrations of the neural network training process. The lens impulse radiation antenna is considered as radiator of transient electromagnetic field for simulation. The radiation process is modeled with the help of the antenna’s transient response obtained using the evolution approach and the superposition principle in the form of Duhamel integral. The prospects of using the proposed methodology in the problems of the Internet of Things are analyzed. The study shows that using the proposed method allows solving multipathing and multiuser problems even in near radiation zone.
{"title":"Information extraction from ultrawideband electromagnetic wave in near radiation zone","authors":"R. Akhmedov","doi":"10.15222/tkea2020.3-4.03","DOIUrl":"https://doi.org/10.15222/tkea2020.3-4.03","url":null,"abstract":"The authors study the dependence of the shape of electromagnetic pulse received in near radiation zone of the antenna on the observation point. The paper discusses negative and positive effects of this phenomenon on the wireless impulse communication and presents a new method of information extraction form ultrawideband electromagnetic pulse, comparing it to the traditional way of signal processing. \u0000The method is based on modern deep learning technics and recurrent neural networks, namely physical long short-term memory. Moreover, the paper presents a concept of direct sequence ultrawideband (DS-UWB) impulse radio receiver based on a physical neural network. It is proposed to change the traditional way of radio signal processing and use a single neural network instead of a matched filter, a magnitude amplifier and a FPGA processor. The architecture of the physical neural network was designed with an intention to study the behavior of ultrawideband short pulse (UWB-SP) radio signal in near and far radiation zones. \u0000The applicability of the neural radio concept is proved by simulation of AWGN communication channel for multiuser environment and real time RX signal processing by the designed neural network. The paper contains the results of a numerical modeling of the radiation-reception process and illustrations of the neural network training process. The lens impulse radiation antenna is considered as radiator of transient electromagnetic field for simulation. The radiation process is modeled with the help of the antenna’s transient response obtained using the evolution approach and the superposition principle in the form of Duhamel integral. \u0000The prospects of using the proposed methodology in the problems of the Internet of Things are analyzed. The study shows that using the proposed method allows solving multipathing and multiuser problems even in near radiation zone.","PeriodicalId":231412,"journal":{"name":"Технология и конструирование в электронной аппаратуре","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134206755","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.15222/tkea2022.4-6.32
A. A. Yefimenko, O. Logvinov, L. I. Prisyazhniuk
The amount of electrical energy generated by solar batteries (SB) depends significantly on their position relative to the Sun. The presence of dependencies of the initial parameter of the SB on the factors determining this position allows finding the optimal orientation of fixed or partially fixed SBs. This paper presents the results of the study on the conditions of using a full factorial experiment for creating mathematical models — regression equations — to simulate the operation of solar batteries under the condition of reducing the amount of field tests necessary for this. It is shown that the simulation accuracy significantly depends on the range of factor values. The conducted study demonstrates that the use of a full factorial experiment in the range of factor values approaching all possible is appropriate for preliminary simulation of the solar battery operation and an approximate assessment of the simulation results in connection with significant errors. Narrowing the range of factor values significantly reduces the deviations of simulation results from experimental data, which in many cases can be accepted, especially if the simulation results are used for specific operating conditions of the solar cell. In order to create mathematical models that would more accurately approach the actual ones obtained experimentally, it is necessary to use dependencies for concretized values of factors.
{"title":"Using full factorial experiment to simulate electricity generation by solar batteries","authors":"A. A. Yefimenko, O. Logvinov, L. I. Prisyazhniuk","doi":"10.15222/tkea2022.4-6.32","DOIUrl":"https://doi.org/10.15222/tkea2022.4-6.32","url":null,"abstract":"The amount of electrical energy generated by solar batteries (SB) depends significantly on their position relative to the Sun. The presence of dependencies of the initial parameter of the SB on the factors determining this position allows finding the optimal orientation of fixed or partially fixed SBs. \u0000This paper presents the results of the study on the conditions of using a full factorial experiment for creating mathematical models — regression equations — to simulate the operation of solar batteries under the condition of reducing the amount of field tests necessary for this. It is shown that the simulation accuracy significantly depends on the range of factor values.\u0000The conducted study demonstrates that the use of a full factorial experiment in the range of factor values approaching all possible is appropriate for preliminary simulation of the solar battery operation and an approximate assessment of the simulation results in connection with significant errors. Narrowing the range of factor values significantly reduces the deviations of simulation results from experimental data, which in many cases can be accepted, especially if the simulation results are used for specific operating conditions of the solar cell. In order to create mathematical models that would more accurately approach the actual ones obtained experimentally, it is necessary to use dependencies for concretized values of factors.","PeriodicalId":231412,"journal":{"name":"Технология и конструирование в электронной аппаратуре","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126074915","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.15222/tkea2021.1-2.54
A. N. Tynynyka
The article is devoted to the complexity assessment of harvesting systems. The author considers peculiarities of assembly lines as production systems and the reasons for the constant growth of their complexity. Complex assembly systems are expensive to implement, run, control and maintain, while their complexity affects performance, quality and reliability. Thus, when designing any assembly system, one must look for compromises between its future operation features, its cost and its complexity. To do this, you need to be able to quantify the complexity. This study made it possible to classify the methods of complexity analysis and propose a model that allows quantifying, to some extent, the complexity of the assembly of electronic units and can be used to work with complex multi-subject lines. The study considers the complexity indicators for the operator`s work. To numerically assess the complexity indicators, it is proposed to use the Likert scale. It is assumed that further research should take into account the following issues. The assembly should be designed with consideration of the human factor and the interrelation of technological operations, tools and ergonomics. This is due to the fact that in manual and semi-automatic workplaces, the human operator plays the crucial part. The connection between ergonomics and complexity must be established using the utility function, methods of fuzzy logic, and computer experiments with a test dummy.
{"title":"Assessment of assembly complexity of electronic units","authors":"A. N. Tynynyka","doi":"10.15222/tkea2021.1-2.54","DOIUrl":"https://doi.org/10.15222/tkea2021.1-2.54","url":null,"abstract":"The article is devoted to the complexity assessment of harvesting systems. The author considers peculiarities of assembly lines as production systems and the reasons for the constant growth of their complexity. Complex assembly systems are expensive to implement, run, control and maintain, while their complexity affects performance, quality and reliability. Thus, when designing any assembly system, one must look for compromises between its future operation features, its cost and its complexity. To do this, you need to be able to quantify the complexity. \u0000This study made it possible to classify the methods of complexity analysis and propose a model that allows quantifying, to some extent, the complexity of the assembly of electronic units and can be used to work with complex multi-subject lines. The study considers the complexity indicators for the operator`s work. To numerically assess the complexity indicators, it is proposed to use the Likert scale.\u0000It is assumed that further research should take into account the following issues. The assembly should be designed with consideration of the human factor and the interrelation of technological operations, tools and ergonomics. This is due to the fact that in manual and semi-automatic workplaces, the human operator plays the crucial part. The connection between ergonomics and complexity must be established using the utility function, methods of fuzzy logic, and computer experiments with a test dummy.","PeriodicalId":231412,"journal":{"name":"Технология и конструирование в электронной аппаратуре","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129916464","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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