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Exploring thickness-dependent physical properties in Cs-doped ZnO thin films 探索cs掺杂ZnO薄膜的厚度相关物理性质

IF 2 4区材料科学 Q3 MATERIALS SCIENCE, COATINGS & FILMS

Thin Solid Films

Pub Date : 2025-09-05 DOI: 10.1016/j.tsf.2025.140790

Hasan B. Albargi , Abanoub Awad , Ahmed El-Himily , Ahmed A. Aboud

In this study, we investigate the influence of film thickness on the properties of cesium (Cs)-doped zinc oxide (ZnO) thin films fabricated via spray pyrolysis. By varying the thickness from 305 nanometers (nm) to 677 nm, we consistently formed a hexagonal ZnO phase across all samples. The crystallite size varied from 51 nm to 58.13 nm, indicating a nuanced relationship between thickness and structural properties. Field emission scanning electron microscopy (FE-SEM) revealed diverse grain size distributions, which are critical for optimizing film performance. From optical measurements, the band gap values were all around 3.26 ± 0.01 electronvolts (eV), while the refractive index decreased significantly from 2.3 to 1.7 with increasing thickness and fixed Cs nominal content at 5 wt percent (wt%). Employing the Spitzer-Fan model, we observed a consistent reduction in high-frequency dielectric constant (ε_∞) from 3.3 to 2.89 as thickness increased, highlighting changes in electronic properties. Importantly, electrical conductivity (σ) exhibited a remarkable increase from 0.0053 ohm⁻¹ meter⁻¹ to 0.044 ohm⁻¹ meter⁻¹ with increasing thickness, suggesting enhanced charge transport properties crucial for optoelectronic applications. Correspondingly, activation energy (E_a) was found to vary between 0.25 eV and 0.415 eV, indicating significant thermal sensitivity across the studied thickness range. Furthermore, ultraviolet (UV) performance under 365 nm illumination showed substantial variations in rise and decay times correlated with film thickness; minimum rise times were recorded at 5.08 s for the 305 nm film, while minimum decay times reached 68.86 s for the 400 nm film. These findings underscore the potential for tailoring ZnO thin films to optimize performance in optoelectronic applications, demonstrating a strong initial impact through quantifiable enhancements in material properties.

在本研究中，我们研究了薄膜厚度对喷雾热解法制备铯（Cs）掺杂氧化锌（ZnO）薄膜性能的影响。通过改变厚度从305纳米（nm）到677纳米，我们在所有样品中一致地形成了六边形ZnO相。晶粒尺寸从51 nm到58.13 nm不等，表明厚度与结构性能之间存在微妙的关系。场发射扫描电镜（FE-SEM）显示了不同的晶粒尺寸分布，这是优化薄膜性能的关键。光学测量表明，带隙值均在3.26±0.01电子伏（eV）左右，而折射率随厚度的增加和Cs标称含量固定在5 wt% （wt%）时从2.3下降到1.7。利用Spitzer-Fan模型，我们观察到随着厚度的增加，高频介电常数（ε∞）从3.3持续降低到2.89，突出了电子特性的变化。重要的是，随着厚度的增加，导电率（σ）从0.0053欧姆（⁻¹米）增加到0.044欧姆（⁻¹米），这表明增强的电荷传输特性对光电应用至关重要。相应地，发现活化能（Ea）在0.25 eV和0.415 eV之间变化，表明在研究的厚度范围内具有显著的热敏性。此外，在365 nm光照下，紫外（UV）性能随膜厚的增加和衰减时间有显著变化；305 nm薄膜的最小上升时间为5.08 s， 400 nm薄膜的最小衰减时间为68.86 s。这些发现强调了定制ZnO薄膜以优化光电应用性能的潜力，通过可量化的材料性能增强展示了强大的初始影响。

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引用次数: 0

Copper (Cu) dopant as the hole enhancer for chemical bath deposited n-type FeSxOy for solar cells applications 铜（Cu）掺杂剂作为化学浴沉积n型FeSxOy太阳能电池的空穴增强剂

IF 2 4区材料科学 Q3 MATERIALS SCIENCE, COATINGS & FILMS

Thin Solid Films

Pub Date : 2025-09-04 DOI: 10.1016/j.tsf.2025.140788

Lee Zheng Yee , Nurul Afifah Zulkifli , Syafiqah Amira Zakiman , Aizuddin Supee

We performed a chemical bath deposition (CBD) to deposit copper (Cu)-doped iron-sulfide-oxide (FeS_xO_y). Higher copper concentration reduced transmittance, the direct bandgap, and oxygen content, while increasing the formation of flower-like agglomerations on the surface. Cu acted as a hole enhancer, lowering the oxygen character in the n-type (electron-dominant) FeS_xO_y, thereby obtaining p-type (hole-dominant) behavior when the Cu concentration was ≥ 2.4 mM. In this work, we systematically observed the effect on the physicochemical properties and photovoltaic properties by changing the concentration (0–7.2 mM) of Cu in the bath solution. P-type Cu-doped FeS_xO_y/n-type FeS_xO_y heterojunctions exhibited rectification properties in a current density-voltage (J-V) measurement.

我们采用化学浴沉积（CBD）沉积掺杂铜的硫化铁氧化物（FeSxOy）。较高的铜浓度降低了透光率、直接带隙和氧含量，同时增加了表面花状团块的形成。当Cu浓度≥2.4 mM时，Cu作为空穴增强剂，降低了n型（电子为主）FeSxOy的氧性质，从而获得p型（空穴为主）行为。本文系统地观察了改变镀液中Cu浓度（0-7.2 mM）对FeSxOy理化性质和光伏性质的影响。在电流密度电压（J-V）测量中，p型掺铜FeSxOy/n型FeSxOy异质结表现出整流特性。

引用次数: 0

A transmission electron microscopy study of orientation relationships and interfacial reaction products in GdFe0.5Cr0.5O3 films grown on (001) SrTiO3 substrates by solution synthesis 溶液合成法在（001）SrTiO3衬底上生长GdFe0.5Cr0.5O3薄膜的取向关系和界面反应产物的透射电镜研究

IF 2 4区材料科学 Q3 MATERIALS SCIENCE, COATINGS & FILMS

Thin Solid Films

Pub Date : 2025-09-04 DOI: 10.1016/j.tsf.2025.140789

S. Rommel , J. Pfund , M. Jain , M. Aindow

GdFe₀.₅Cr₀.₅O₃ (GFCO) is a single-phase magnetoelectric multiferroic at temperatures close to ambient. Epitaxial thin films of this orthorhombic perovskite would offer the possibility of tuning its electrical and magnetic properties through control of strain and interface effects. Here, 200 nm thick GFCO thin films have been grown on (001) SrTiO₃ substrates by solution synthesis and the microstructures have been investigated by cross-sectional transmission electron microscopy. The GFCO films are epitaxial but exhibit a mixture of three different orientation relationships in the form of domains ≈50 nm in diameter. Geometric analyses of the lattice matching show that the misfits for these domains would be tensile with magnitudes of less than 2 %. Pockets of a SrCrO₄ reaction product form at the film/substrate interface and do not exhibit any simple orientation with the adjacent phases. The product morphology indicates that the outward diffusion of Sr is more rapid than the inward diffusion of Cr, and this is related to the microstructures of the surrounding phases. These data show that epitaxial films of GFCO can be obtained via this route, but careful control of process parameters would be required to produce single-domain films, and alternate substrates or buffer layers would be needed to inhibit SrCrO₄ formation.

GdFe₀₅Cr₀。₅O₃（GFCO）是一种单相磁电多铁质材料，温度接近环境温度。这种正交钙钛矿的外延薄膜将提供通过控制应变和界面效应来调整其电学和磁性能的可能性。本文采用溶液合成的方法在（001）SrTiO3衬底上生长了200 nm厚的GFCO薄膜，并用透射电镜对其微观结构进行了研究。GFCO薄膜是外延的，但表现出三种不同取向关系的混合物，其形式为直径≈50 nm的畴。晶格匹配的几何分析表明，这些区域的不匹配将产生小于2%的拉伸。srcr4反应产物的口袋形成于薄膜/衬底界面，与相邻相不表现出任何简单的取向。产物形貌表明，Sr向外扩散的速度比Cr向内扩散的速度快，这与周围相的显微组织有关。这些数据表明，GFCO的外延薄膜可以通过这种途径获得，但需要仔细控制工艺参数以产生单畴薄膜，并且需要替代衬底或缓冲层来抑制SrCrO4的形成。

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引用次数: 0

Phase-engineered 1T/2H MoS2 via spray coating: role of precursor concentration in structural and electronic tuning 通过喷涂相工程的1T/2H MoS2：前驱体浓度在结构和电子调谐中的作用

IF 2 4区材料科学 Q3 MATERIALS SCIENCE, COATINGS & FILMS

Thin Solid Films

Pub Date : 2025-09-03 DOI: 10.1016/j.tsf.2025.140786

Thomas Vicart , Youssef Doubi , Bouchra Asbani , Nitul Rajput , Bouchaib Hartiti , Khalid Hoummada , Andrea Campos , Mimoun El Marssi , Michael Depriester , Mustapha Jouiad

Molybdenum disulfide (MoS₂) is particularly compelling due to its tunable electronic properties, which are intrinsically linked to its polymorphic phases. Controlling the synthesis of mixed-phase MoS₂, comprising the metastable metallic 1T-MoS₂ phase and the semiconducting 2H-MoS₂, is essential for tailoring its structural and electronic properties. Here, we demonstrate the fabrication of 1T/2H-MoS₂ mixed-phase structures via a spray coating method, emphasizing the impact of precursor concentration on phase composition and crystallinity. Comprehensive structural and spectroscopic analyses confirm the coexistence of both phases, revealing that increased precursor concentration promotes phase modulation. Optical properties investigations indicate a bandgap energy reduction from 1.48 to 1.19 eV as precursor concentration increases from 5 to 15 mmol·L⁻¹, underscoring the semiconducting nature of the mixed-phase. Electrical characterization further shows that the sample synthesized at 15 mmol·L⁻¹ exhibits the highest electrical conductivity of 2.23 × 10^–² mS·cm^–1 and the lowest resistivity of 44.78 kΩ·cm, attributed to an increased fraction of the 1T-MoS₂ phase. These results provide a viable approach for engineering 1T/2H-MoS₂ mixed-phase with tunable structural and electronic properties.

二硫化钼（MoS 2）是特别引人注目的，由于其可调谐的电子特性，这是内在地联系到它的多晶相。控制混合相MoS2的合成，包括亚稳金属1T-MoS2相和半导体2H-MoS2相，对于调整其结构和电子性能至关重要。在这里，我们展示了通过喷涂方法制备1T/2H-MoS2混合相结构，强调了前驱体浓度对相组成和结晶度的影响。综合结构和光谱分析证实了两相的共存，表明前驱体浓度的增加促进了相位调制。光学性质研究表明，当前体浓度从5 mmol·L - 1增加到15 mmol·L - 1时，带隙能量从1.48 eV减少到1.19 eV，强调了混合相的半导体性质。电特性进一步表明，在15 mmol·L⁻¹下合成的样品的电导率最高，为2.23 × 10 -²mS·cm - 1，电阻率最低，为44.78 kΩ·cm，这是由于1T-MoS2相的比例增加所致。这些结果为具有可调谐结构和电子性能的1T/2H-MoS2混合相的工程化提供了可行的方法。

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引用次数: 0

Exploring oxygen pressure effects on phase transitions, ferroelectric properties, and ultrasonic transducer performance in (Ba0.85Ca0.15)(Ti0.9Zr0.1)O3 thin films by pulsed laser deposition 利用脉冲激光沉积技术研究氧压对（Ba0.85Ca0.15）（Ti0.9Zr0.1）O3薄膜相变、铁电性能和超声换能器性能的影响

IF 2 4区材料科学 Q3 MATERIALS SCIENCE, COATINGS & FILMS

Thin Solid Films

Pub Date : 2025-09-03 DOI: 10.1016/j.tsf.2025.140780

E. Benítez-Flores , A. Reyes-Montero , O. Depablos-Rivera , B. Carreño-Jiménez , M. Acuautla , R. Castañeda-Guzmán

This study investigates the effect of oxygen pressure (P

_{O_{2}}

) during pulsed laser deposition on the structural, ferroelectric, and piezoelectric properties of

thin films. Films were deposited at P

_{O_{2}}

levels of 8.6, 10, 11.5, and 12.7 Pa. The optimal ferroelectric properties were observed at 10 Pa, with a remnant polarization of 2.97

μ

C/cm², a coercive field of 33.80 kV/cm, and a saturation polarization of 11.88

μ

C/cm², closely matching the target composition. X-ray diffraction and Raman spectroscopy confirmed the presence of a morphotropic phase boundary (MPB) near room temperature. The MPB shifts toward lower temperatures with increasing P

_{O_{2}}

, as characterized by the photoacoustic technique. Frequency measurements based on photoacoustic and piezoelectric effects demonstrated promising performance for piezoelectric micromachined ultrasonic transducers, with resonance frequencies ranging from 9.5 to 13 MHz.

本文研究了脉冲激光沉积过程中氧压（PO2）对薄膜结构、铁电性和压电性的影响。在PO2水平8.6、10、11.5和12.7 Pa下沉积薄膜。在10 Pa条件下，铁电性能最佳，残余极化率为2.97 μC/cm2，矫顽力场为33.80 kV/cm，饱和极化率为11.88 μC/cm2，与目标成分基本一致。x射线衍射和拉曼光谱证实在室温附近存在致形相边界（MPB）。MPB随着PO2的增加而向较低的温度移动，这是光声技术的特征。基于光声和压电效应的频率测量表明，压电微机械超声换能器具有良好的性能，谐振频率范围为9.5至13 MHz。

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引用次数: 0

Mg-doped ZrO2 thin film protection of AZ31 magnesium alloy against wet corrosion: A detailed study 掺镁ZrO2薄膜保护AZ31镁合金抗湿腐蚀的详细研究

IF 2 4区材料科学 Q3 MATERIALS SCIENCE, COATINGS & FILMS

Thin Solid Films

Pub Date : 2025-09-03 DOI: 10.1016/j.tsf.2025.140787

Sundeep Kumar Marndi , Meera Antony , Jyotirmoy Roy , Gangineni Ramesh Babu , Amirthapandian Sankarakumar , Paramasivam Thangadurai

Magnesium-based alloys possess attractive properties that minimize the weight of the device and improve its performance efficiency. However, their poor corrosion resistance capabilities compromise their use in many applications. One way to protect against corrosion is to apply a thin film coating on the surface. In this work, pure, 3%, 5%, 8%, and 10% Mg ion-doped zirconia (ZrO₂) thin film coatings are fabricated on AZ31 Mg alloy using the electron-beam physical vapor deposition method to protect its surface from corrosion. The Mg ion doping has stabilized a tetragonal phase of ZrO₂ films, compared to the monoclinic phase in the undoped film. The stabilized tetragonal phase has improved the physical properties of the films compared to the undoped film with monoclinic phase. Corrosion studies conducted using potentiodynamic polarization and impedance spectroscopy showed improved corrosion inhibition characteristics of the Mg:ZrO₂ film in 3.5 wt.% NaCl electrolyte solution. The corrosion rate is reduced from 0.54 mmpy to 0.05 mmpy when coated with 5% Mg doped ZrO₂ film. The corrosion current and potential are obtained to be 2.38 µA/cm² and -1.46 V, respectively. The charge transfer resistance is high and stable in the coated samples compared to the bare substrates, where the resistance dropped heavily after the corrosion. Post-corrosion analysis using scanning electron microscopy, impedance spectroscopy, and X-ray photoelectron spectroscopy, including a quantitative analysis to discern the corrosion mechanism in the Mg:ZrO₂/AZ31 heterostructure, including the presence of Na and Cl from the electrolyte. Surface features and doping quantities have greatly influenced the corrosion inhibition capabilities of the AZ31 Mg alloys.

镁基合金具有吸引人的特性，可以最大限度地减少设备的重量并提高其性能效率。然而，它们较差的耐腐蚀能力影响了它们在许多应用中的使用。防止腐蚀的一种方法是在表面涂上一层薄膜。本文采用电子束物理气相沉积法在AZ31镁合金表面制备了纯、3%、5%、8%和10% Mg离子掺杂的氧化锆（ZrO2）薄膜涂层，以保护其表面免受腐蚀。与未掺杂ZrO2膜的单斜相相比，Mg离子掺杂使ZrO2膜的四方相稳定。与未掺杂的单斜相相比，稳定的四方相改善了薄膜的物理性能。利用动电位极化和阻抗谱进行的腐蚀研究表明，在3.5 wt.% NaCl电解质溶液中，Mg:ZrO2膜的缓蚀特性得到了改善。当掺杂5% Mg的ZrO2膜时，腐蚀速率从0.54 mmpy降低到0.05 mmpy。腐蚀电流为2.38µA/cm2，腐蚀电位为-1.46 V。与裸基材相比，涂覆样品中的电荷转移电阻高且稳定，而裸基材的电阻在腐蚀后大幅下降。腐蚀后分析采用扫描电镜、阻抗谱和x射线光电子能谱，包括定量分析，以辨别腐蚀机理在Mg:ZrO2/AZ31异质结构，包括存在的Na和Cl的电解质。表面特征和掺杂量对AZ31镁合金的缓蚀性能有很大影响。

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引用次数: 0

Thin film Indium Tin oxide transparent conductors: Comparing the effects of deposition temperature and annealing 薄膜氧化铟锡透明导体：比较沉积温度和退火的影响

IF 2 4区材料科学 Q3 MATERIALS SCIENCE, COATINGS & FILMS

Thin Solid Films

Pub Date : 2025-08-30 DOI: 10.1016/j.tsf.2025.140784

Luis C. Infante-Ortega , Xiaolei Liu, Kieran M. Curson, Luksa Kujovic, Mustafa Togay, Adam M. Law, Ali Abbas, Patrick J.M. Isherwood, Jake W. Bowers, John M. Walls

Indium Tin-Oxide (ITO) transparent conducting films were prepared by RF magnetron sputtering on glass substrates. The effects of two different heat treatments – annealing and heating the substrate, both at 300 °C and 500 °C – were examined to determine how they affect the microstructure, optical and electrical properties of the films. Despite extensive work on both heat treatment methods in literature, the two have not been compared in a side-by-side study thus far, and this work aims to address this. Heating the substrate during deposition produced lower resistivity films with higher carrier concentrations and higher transmission over visible wavelengths. Microstructural analysis revealed that both heat treatments produced crystalline ITO films, but the preferred crystal orientations were different. Annealing resulted in a preferred cubic (222) orientation, and high substrate temperatures yielded a mixed phase crystal structure (cubic and rhombohedral) with a preferred cubic (211) orientation. Scanning Transmission Electron Microscopy (STEM) analysis showed that sputtering at room temperature with no added heat produced films with a mostly amorphous structure which were converted into equiaxed grains by annealing. High substrate temperatures resulted in a columnar grain structure. These results have useful implications for the deposition of ITO films for various opto-electronic applications.

采用射频磁控溅射技术在玻璃衬底上制备了铟锡氧化物（ITO）透明导电膜。研究了两种不同热处理的效果——在300°C和500°C下退火和加热衬底——以确定它们如何影响薄膜的微观结构、光学和电学性能。尽管在文献中对这两种热处理方法进行了广泛的研究，但到目前为止，这两种热处理方法还没有在并排研究中进行比较，这项工作旨在解决这个问题。在沉积过程中加热衬底产生具有更高载流子浓度和更高可见光透射率的低电阻率薄膜。显微组织分析表明，两种热处理方式均能生成结晶性ITO薄膜，但择优取向不同。退火产生了优选立方（222）取向，而高衬底温度产生了优选立方（211）取向的混合相晶体结构（立方和菱形）。扫描透射电镜（STEM）分析表明，在室温下不加热溅射制备的薄膜大部分为非晶结构，经退火后转变为等轴晶。衬底温度高导致晶粒呈柱状结构。这些结果对ITO薄膜在各种光电应用中的沉积具有重要意义。

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引用次数: 0

Optimized corrosion resistance and electrical conductivity of Nb:Ti:N-coated 316L stainless steel under fluctuating potentials for proton exchange membrane water electrolysis 质子交换膜电解波动电位下Nb:Ti: n涂层316L不锈钢的耐蚀性和电导率优化

IF 2 4区材料科学 Q3 MATERIALS SCIENCE, COATINGS & FILMS

Thin Solid Films

Pub Date : 2025-08-30 DOI: 10.1016/j.tsf.2025.140785

Luqi Chang , Xiejing Luo , Yingyu Ding , Jiuhong Zhang , Jizheng Yao , Zhanfeng Deng , Chaofang Dong

Proton exchange membrane water electrolysis (PEMWE) demonstrates adaptability to power fluctuations, enabling integration with renewable energy sources like photovoltaic and wind power. To improve the corrosion resistance and electrical conductivity of 316L stainless steel (316L SS) in high acidity and fluctuating potential environments, it has been modified with Nb:Ti:N coatings prepared by multi-arc ion plating. The Nb:Ti:N coating with initial interfacial contact resistance (ICR) of 4.86 mΩ·cm², consisting of conductive TiN, Nb₂N, NbN, and Ti phases, has increased the stable potential of 316L SS to 1.8 V_Ag/AgCl. After 4 h of polarization test, the ICR reached a maximum value of 7.93 mΩ·cm², satisfying the United States department of energy target (<10 mΩ·cm²). Square/triangular wave potentials between 1.2 and 1.8 V_Ag/AgCl have been applied to simulate fluctuating energy inputs. The results indicate that the Nb:Ti:N coating responds rapidly to potential fluctuations, particularly under triangular waveforms, without severe failure phenomenon. Thus, the Nb:Ti:N coating offers a viable reference for designing bipolar plates resistant to fluctuating potentials.

质子交换膜水电解（PEMWE）具有对电力波动的适应性，可以与光伏和风能等可再生能源相结合。为了提高316L不锈钢（316L SS）在高酸性和波动电位环境中的耐蚀性和导电性，采用多弧离子镀法制备Nb:Ti:N涂层对其进行改性。Nb:Ti:N涂层的初始界面接触电阻（ICR）为4.86 mΩ·cm²，由导电TiN、Nb₂N、NbN和Ti相组成，使316L SS的稳定电位提高到1.8 VAg/AgCl。经过4 h的极化测试，ICR达到最大值7.93 mΩ·cm²，满足美国能源部的目标（<10 mΩ·cm²）。1.2和1.8 VAg/AgCl之间的方波/三角波电位已被用于模拟波动的能量输入。结果表明，Nb:Ti:N涂层对电位波动响应迅速，特别是在三角形波形下，没有出现严重的失效现象。因此，Nb:Ti:N涂层为设计抗波动电位双极板提供了可行的参考。

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引用次数: 0

Effect of dendrimer underlayers on microstructure, morphology, optical, and electrical properties of direct current sputtered indium tin oxide thin film 枝状聚合物衬底对直流溅射氧化铟锡薄膜微观结构、形貌、光学和电学性能的影响

IF 2 4区材料科学 Q3 MATERIALS SCIENCE, COATINGS & FILMS

Thin Solid Films

Pub Date : 2025-08-29 DOI: 10.1016/j.tsf.2025.140781

Firdos Ali , Rajesh Chandra , Dirk Bottesch , Subhadra Gupta

Minimization of surface roughness is extremely important for sputtered indium-tin oxide (ITO) films used for electrodes in solar cells, organic light-emitting diodes (OLED), and other device applications. One of the techniques used to achieve smooth ITO films is the optimization of process parameters, together with the injection of cesium vapor into the plasma. We have investigated an alternative, more straightforward approach, the application of dendrimer monolayers by dip- or spin-coating techniques before ITO sputter deposition at ambient temperatures. The ITO films have been characterized by X-ray diffraction (XRD) and atomic force microscopy (AFM), and their microstructure and morphology have been correlated with optical and electronic properties, including transmission and resistivity. The presence of the dendrimer underlayer appears to mediate the film's roughness by reducing grain size and improving adhesion. The most significant effect is seen in films sputtered at low powers. This is expected, as a high level of ion bombardment is likely to damage or destroy the dendrimer underlayer. The observed improvement is most encouraging for electrodes in solar cells and flexible display applications, where low resistivity and low surface roughness are required at low deposition power at room temperature.

对于用于太阳能电池、有机发光二极管（OLED）和其他器件应用的电极的溅射铟锡氧化物（ITO）薄膜来说，表面粗糙度最小化是极其重要的。用于获得光滑ITO薄膜的技术之一是优化工艺参数，同时向等离子体中注入铯蒸气。我们已经研究了另一种更直接的方法，即在环境温度下ITO溅射沉积之前，通过浸镀或旋转涂层技术应用树突状单层。利用x射线衍射（XRD）和原子力显微镜（AFM）对ITO薄膜进行了表征，并对其微观结构和形貌与光学和电子性能（包括透射率和电阻率）进行了相关分析。树状分子下层的存在似乎通过减小晶粒尺寸和提高附着力来调节薄膜的粗糙度。最显著的影响是在低功率溅射的电影中看到的。这是预料之中的，因为高水平的离子轰击很可能破坏或破坏树状聚合物下层。观察到的改进对于太阳能电池和柔性显示应用中的电极来说是最令人鼓舞的，这些应用需要在室温下低沉积功率下的低电阻率和低表面粗糙度。

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引用次数: 0

Oxidation and atomic migration between CuOy and SnOx layers magnetron sputtered on polyethylene terephthalate 聚对苯二甲酸乙二醇酯磁控溅射CuOy和SnOx层之间的氧化和原子迁移

IF 2 4区材料科学 Q3 MATERIALS SCIENCE, COATINGS & FILMS

Thin Solid Films

Pub Date : 2025-08-29 DOI: 10.1016/j.tsf.2025.140782

Adriana Ventolero , Ma. Guadalupe Olayo , Elena Colín , J. Cuauhtémoc Palacios , Fernando G. Flores , Rosario Ramírez , Guillermo J. Cruz

Alternated bilayers of tin (SnO_x) and copper (CuO_y) oxides were synthesized by reactive magnetron sputtering on polyethylene terephthalate (PET) to study the atomic interlayer migration and oxidation states. The total thickness of the bilayers was between 468 and 482 nm. The thickness of sublayers and interfaces were calculated by continuous erosion with Ar ions, finding 86 nm in PET-CuO_y, 34 nm in SnO_x-CuO_y and 57 nm in CuO_y-SnO_x. It was found Cu atomic interlayer migration to its neighbors but not Sn migration. The metallic chemical states were studied by means of the energetic distribution of Cu2p3/2, Sn3d5/2 and O1s orbitals. In the SnO_x-CuO_y bilayer, CuO_y oxides formed during the sputtering showed 5 chemical states with y = 0 (56.5 %), 0.6 (19.0 %), 1.2 (10.1 %), 1.9 (5.8 %) and 2.6 (2.0 %); and when it diffused into the SnO_x layer, 4 chemical states were formed with y = 0.3 (53.9 %), 1.0 (18.6 %), 1.7 (8.2 %) and 2.4 (only at 0 s of erosion with 7.8 %). These numbers suggest different oxidation in Cu when it is formed directly from the sputtering in an oxygen atmosphere and when it diffuses among the metallic layers. In SnO_x, 3 Sn chemical states were found with x = 0.4 (3.8 %), 1.8 (93.5 %) and 3.3 (2.7 %) without migration to the Cu layer. From a global point of view, O/Cu and O/Sn atomic ratios showed different values from those relative to their respective chemical valences.

采用反应磁控溅射法在聚对苯二甲酸乙二醇酯（PET）上合成了锡（SnOx）和铜（CuOy）氧化物的交替双层，研究了原子层间迁移和氧化态。双层膜的总厚度在468 ~ 482 nm之间。通过连续侵蚀氩离子计算亚层厚度和界面厚度，PET-CuOy为86 nm， SnOx-CuOy为34 nm， cuy - snox为57 nm。发现Cu原子在层间向相邻原子迁移，而Sn原子没有迁移。利用Cu2p3/2、Sn3d5/2和O1s轨道的能量分布研究了金属化学态。在SnOx-CuOy双分子层中，溅射形成的CuOy氧化物呈现出5种化学态，分别为y = 0（56.5%）、0.6（19.0%）、1.2（10.1%）、1.9（5.8%）和2.6 (2.0%)；扩散到SnOx层时，形成y = 0.3（53.9%）、1.0（18.6%）、1.7（8.2%）和2.4（仅在侵蚀0 s时为7.8%）4种化学态。这些数字表明，当铜在氧气气氛中直接溅射形成时，以及当它在金属层之间扩散时，其氧化程度不同。SnOx中存在3种Sn的化学态，分别为x = 0.4（3.8%）、1.8（93.5%）和3.3(2.7%)，未向Cu层迁移。从整体上看，O/Cu和O/Sn的原子比与它们各自的化学价的原子比不同。

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