Thin Solid Films最新文献_第7页

Effect of anchoring groups on the formation of self-assembled monolayers on Au(111) from cyclohexanethiol and cyclohexyl thiocyanate 锚定基团对环己硫醇和环己基硫氰酸盐在金(111)上形成自组装单层的影响

IF 2 4区材料科学 Q3 MATERIALS SCIENCE, COATINGS & FILMS

Thin Solid Films

Pub Date : 2024-10-28 DOI: 10.1016/j.tsf.2024.140560

Jun Hyeong Lee , Jin Wook Han , Gaeun Lee , Seulki Han , Haeri Kim , Dongjin Seo , Riko Kaizu , Glenn Villena Latag , Tomohiro Hayashi , Jaegeun Noh

Surface structures, binding conditions, and electrochemical behaviors of self-assembled monolayers (SAMs) formed by adsorption of cyclohexanethiol (CHT, C₆H₁₀-SH) and cyclohexyl thiocyanate (CHTC, C₆H₁₀-SCN) on Au(111) were characterized to understand the effect of anchoring groups on the formation of SAMs using scanning tunneling microscopy (STM), X-ray photoelectron spectroscopy (XPS), and cyclic voltammetry (CV). STM observations showed that CHT SAMs had tri-directional small-ordered domains, whereas CHTC SAMs were composed of unidirectional long-range-ordered domains and disordered domains. CHT and CHTC SAMs had identical molecular arrangements with zig-zag-ordered molecular rows, unlike the SAMs of alkanethiols and alkyl thiocyanates, which have different packing structures. XPS measurements showed that CHTC SAMs on Au(111) can be formed via chemical reactions of sulfur atoms after cleavage of S-CN bonds, and the surface coverages of CHT and CHTC SAMs were similar. Moreover, the N 1s peak intensity of CHTC SAMs is very weak, which means that the CN species generated during the adsorption of CHTC molecules on Au(111) are easily removed from the surface. CV measurements revealed the reductive desorption peaks of CHT and CHTC SAMs at similar potentials of −0.980 and −0.988 V, respectively, suggesting that the electrochemical stabilities of CHT and CHTC SAMs were almost identical to each other. Overall, we clearly demonstrated that, unlike alkyl thiocyanate SAMs, alicyclic thiocyanates could be used as an excellent alternative to thiol analogues with the same alicyclic backbone for SAM preparation.

利用扫描隧道显微镜（STM）、X射线光电子能谱（XPS）和循环伏安法（CV）表征了环己基硫醇（CHT，C6H10-SH）和环己基硫氰酸盐（CHTC，C6H10-SCN）在金（111）上吸附形成的自组装单层（SAMs）的表面结构、结合条件和电化学行为，以了解锚定基团对 SAMs 形成的影响。STM 观察结果表明，CHT SAM 具有三向小有序结构域，而 CHTC SAM 则由单向长程有序结构域和无序结构域组成。CHT 和 CHTC SAM 具有相同的分子排列，分子行呈之字形有序排列，与烷硫醇和硫氰酸烷基酯的 SAM 不同，它们具有不同的堆积结构。XPS 测量结果表明，Au(111) 上的四氯化碳 SAM 可通过硫原子裂解 S-CN 键后的化学反应形成，而且 CHT 和 CHTC SAM 的表面覆盖率相似。此外，四氯化碳 SAM 的 N 1s 峰强度非常弱，这说明四氯化碳分子在 Au（111）上吸附时产生的 CN 物种很容易从表面去除。CV 测量显示 CHT 和 CHTC SAM 的还原解吸峰电位相似，分别为 -0.980 V 和 -0.988 V，这表明 CHT 和 CHTC SAM 的电化学稳定性几乎相同。总之，我们清楚地证明，与硫氰酸烷基 SAM 不同，脂环族硫氰酸盐可以作为具有相同脂环族骨架的硫醇类似物的极佳替代品用于制备 SAM。

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引用次数: 0

Plasma-enhanced atomic layer deposition of N-doped GaO thin film for bandgap modulation 用于带隙调制的 N 掺杂氧化镓薄膜的等离子体增强原子层沉积

IF 2 4区材料科学 Q3 MATERIALS SCIENCE, COATINGS & FILMS

Thin Solid Films

Pub Date : 2024-10-28 DOI: 10.1016/j.tsf.2024.140561

Longxing Su , Hongping Ma

Bandgap modulation is extremely important for optoelectronic and electronic devices. However, compare with Ⅱ-Ⅵ and Ⅲ-Ⅴ compound semiconductors, the ultrawide bandgap semiconductor Ga₂O₃ (Ⅲ-Ⅵ) faces a tough obstacle of bandgap modulation. Herein, we have prepared a N-doped GaO thin film on Si substrate through a plasma-enhanced atomic layer deposition (PEALD) method. The as-deposited GaO:N layer exhibits amorphous nature with thickness of ∼8.4 nm. The bandgap of the as-deposited GaO:N layer is adjusted to 4.31 eV, which is ∼0.49 eV smaller than the bandgap of pure Ga₂O₃. In addition, the photoluminescence (PL) spectra from five randomly selected points of the film layer indicate the uniformly distribution of N concentration. Subsequently, the energy band diagram of the as-deposited GaO:N layer is determined by the X-ray photoelectron spectroscopy (XPS), in which the Fermi energy level locates ∼0.81 eV below the conduction band minimum (CBM) and ∼3.5 eV above the valence band maximum (VBM). Our study raises a promising strategy for modulating the bandgap of Ga₂O₃, which provides potential applications in spectrum adjustable photodetector and high electron mobility transistor.

带隙调制对光电和电子设备极为重要。然而，与Ⅱ-Ⅵ和Ⅲ-Ⅴ化合物半导体相比，超宽带隙半导体 Ga2O3（Ⅲ-Ⅵ）在带隙调制方面面临着严峻的挑战。在此，我们采用等离子体增强原子层沉积（PEALD）方法在硅衬底上制备了掺杂 N 的 GaO 薄膜。沉积后的 GaO:N 层呈非晶态，厚度为 8.4 nm。所沉积的 GaO:N 层的带隙被调整为 4.31 eV，比纯 Ga2O3 的带隙小 0.49 eV。此外，从薄膜层上随机选取的五个点的光致发光（PL）光谱显示出 N 浓度的均匀分布。随后，通过 X 射线光电子能谱（XPS）测定了淀积的 GaO:N 层的能带图，其中费米能级位于导带最小值（CBM）下方 ∼0.81 eV 和价带最大值（VBM）上方 ∼3.5 eV。我们的研究为调控 Ga2O3 的带隙提出了一种有前途的策略，为光谱可调光电探测器和高电子迁移率晶体管提供了潜在的应用。

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引用次数: 0

Structural and electrical characterization of phase evolution in epitaxial Gd2O3 due to anneal temperature for silicon on insulator application 用于绝缘体硅的外延 Gd2O3 因退火温度而发生相变的结构和电气特性分析

IF 2 4区材料科学 Q3 MATERIALS SCIENCE, COATINGS & FILMS

Thin Solid Films

Pub Date : 2024-10-23 DOI: 10.1016/j.tsf.2024.140559

Nishant Saurabh , Shubham Patil , Paritosh Meihar , Sandeep Kumar , Anand Sharma , BhaveshKumar Kamaliya , Rakesh G. Mote , Sandip Lashkare , Apurba Laha , Veeresh Deshpande , Udayan Ganguly

In this work, we understand the post-deposition anneal temperature effects on structural and electrical (leakage current and trap density) properties of epitaxial Gd₂O₃ film grown on Si (111) substrate using a cost-effective and High-Volume Manufacturing capable radio frequency sputtering method. It is found that the Rapid Thermal Annealing (RTA) at an optimum temperature of 850 °C enhances the crystallinity of the cubic phase in film. However, at higher RTA temperatures (>900 °C to 1050 °C), Si out-diffusion in Gd₂O₃ film is manifested as the reason for phase evolution towards the amorphous phase. The electrical characterization shows the film's low leakage current density of 100 nA/cm². Moreover, increased breakdown voltage and field are observed with increasing RTA temperature. The frequency-dependent Capacitance-Voltage analysis shows a parallel shift accompanied by a kink at a lower frequency, indicating the presence of interface traps (D_it) with a range of time constants. After the forming gas annealing, a significant reduction in D_it is observed. The low leakage current density, low D_it and high crystallinity make Gd₂O₃ a promising candidate as a buried oxide in Silicon on Insulator MOSFETs.

在这项工作中，我们了解了沉积后退火温度对使用具有成本效益和大批量制造能力的射频溅射方法在硅（111）基底上生长的外延 Gd2O3 薄膜的结构和电气（漏电流和陷阱密度）特性的影响。研究发现，在 850 °C 的最佳温度下进行快速热退火（RTA）可提高薄膜中立方相的结晶度。然而，在较高的 RTA 温度（900 ℃ 至 1050 ℃）下，Gd2O3 薄膜中的硅向外扩散，成为向无定形相演化的原因。电学特性分析表明，薄膜的漏电流密度很低，仅为 100 nA/cm2。此外，随着 RTA 温度的升高，还观察到击穿电压和击穿场强的增加。与频率相关的电容-电压分析表明，在较低频率下会出现平行移动和扭结，这表明存在时间常数范围内的界面陷阱（Dit）。在成型气体退火后，观察到 Dit 显著减少。低漏电流密度、低 Dit 和高结晶度使 Gd2O3 有希望成为绝缘体硅 MOSFET 的埋藏氧化物。

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引用次数: 0

Defect induced persistence photoconductivity in spray pyrolyzed ZnO thin films: Impact of Sm3+doping 喷雾热解氧化锌薄膜中缺陷诱导的持久光电导性：Sm3+ 掺杂的影响

IF 2 4区材料科学 Q3 MATERIALS SCIENCE, COATINGS & FILMS

Thin Solid Films

Pub Date : 2024-10-21 DOI: 10.1016/j.tsf.2024.140555

Manu Srivathsa, BV Rajendra

The persistent photoconductivity of the rare earth ion doped ZnO is an emerging field. The present work focuses on the effect of samarium (Sm³⁺) ion doping on the persistence photo response behaviour ZnO host matrix. The Zn_1-xSm_xO (x = 0.0 to 0.10) thin films were deposited on chemically cleaned glass substrates using spray pyrolysis technique. The films showed polycrystalline nature and hexagonal wurtzite structure without any impurity peaks. The Zn_0.93Sm_0.07O films showed maximum crystallite size of 24.2 nm and minimum dislocation density. The gradual change in the thickness of the fibrous nature was observed with the addition of Sm³⁺ ions into ZnO lattice. Energy dispersive analysis of x-ray and X-ray photoelectron spectroscopy confirmed the presence of elements and its oxidation states in the deposited film respectively. The area under the curve of deconvoluted photoluminescence spectra of deposits confirmed the decrease in the various defect percentage with increase in the doping concentration of Sm³⁺ ions. The photoluminescence spectra of Zn_0.93Sm_0.07O films showed maximum near band edge emission and minimum defects. The Zn_0.93Sm_0.07O films showed higher carrier concentration of 1 × 10¹⁷ cm⁻³, mobility 32 cm²/Vs and lower resistivity of 1 × 10² Ω cm due to improved film quality. The Zn_0.93Sm_0.07O films exhibited the current value under dark and ultraviolet light illumination was in the range of 10⁻⁶ A and 10⁻⁴ A respectively. The maximum photocurrent was noticed at 375 nm which corresponds to the bandgap of the deposited films. The Zn_0.93Sm_0.07O films showed faster photo response (5 s and 131 s of response and recovery time) due to the presence of minimum trap states. Hence the Zn_0.93Sm_0.07O films can be used in the fabrication of light dependent resistors and ultraviolet sensors.

稀土离子掺杂氧化锌的持久光电导性是一个新兴领域。本研究的重点是掺杂钐（Sm3+）离子对 ZnO 主基质持久光响应行为的影响。采用喷雾热解技术在化学清洗过的玻璃基底上沉积了 Zn1-xSmxO (x = 0.0 至 0.10) 薄膜。薄膜显示出多晶性质和六方菱面体结构，没有任何杂质峰。Zn0.93Sm0.07O 薄膜的最大晶粒尺寸为 24.2 nm，位错密度最小。在 ZnO 晶格中加入 Sm3+ 离子后，观察到纤维状的厚度逐渐发生变化。X 射线能量色散分析和 X 射线光电子能谱分别证实了沉积薄膜中元素的存在及其氧化态。沉积物的去卷积光致发光光谱曲线下的面积证实，随着 Sm3+ 离子掺杂浓度的增加，各种缺陷的百分比都在下降。Zn0.93Sm0.07O 薄膜的光致发光光谱显示出最大的近带边缘发射和最小的缺陷。由于薄膜质量的提高，Zn0.93Sm0.07O 薄膜显示出更高的载流子浓度（1 × 1017 cm-3）、迁移率（32 cm2/Vs）和更低的电阻率（1 × 102 Ω cm）。Zn0.93Sm0.07O 薄膜在暗光和紫外线照射下的电流值分别为 10-6 A 和 10-4 A。最大光电流出现在 375 纳米波长处，与沉积薄膜的带隙相对应。由于存在最小陷阱态，Zn0.93Sm0.07O 薄膜的光响应速度更快（响应和恢复时间分别为 5 秒和 131 秒）。因此，Zn0.93Sm0.07O 薄膜可用于制造光敏电阻和紫外线传感器。

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引用次数: 0

Effect of inserting a-C layers on anticorrosion behavior of Ni-NiCr-NiCrAlSi composite coating on copper through magnetron sputtering for marine applications 通过磁控溅射在铜上镀镍-镍铬-镍铬-铝硅复合层对海洋应用中的防腐行为的影响

IF 2 4区材料科学 Q3 MATERIALS SCIENCE, COATINGS & FILMS

Thin Solid Films

Pub Date : 2024-10-20 DOI: 10.1016/j.tsf.2024.140558

Hao Du , Jiayuan Wen , Guihong Song , Hao Wu , Ji-an Feng , Yan Huang , Yujiang Wang , Yansheng Yin

Amorphous carbon film by magnetron sputtering was inserted in the NiCrAlSi layer to form NiCrAlSi/a-C multilayer with modulation period in a range of 131.6 nm to 240.2 nm in the Ni-NiCr-NiCrAlSi coating for a further improvement to copper on corrosion resistance aiming at application as a heat exchanger for mariculture in sea water. After structure characterization, the corrosion behavior of the samples with variant modulation periods of the NiCrAlSi/a-C multilayer keeping the same total thickness(1 μm) was compared using potentiodynamic polarization and electrochemical impedance spectroscopy. The polarization curves show that the corrosion potentials of the coatings with modulation periods of 240.2 nm, 198.4 nm, 158.4 nm and bilayer number 4, 5, 6 for NiCrAlSi/a-C layer are more negative compared to that with modulation period of 131.6 nm and bilayer number 7, which indicates that the smallest modulation period results in the highest corrosion resistance. The amorphous a-C sublayer in the multilayer coatings plays an active role in the improvement, for an introduction of the more interfaces between the NiCrAlSi and the a-C sublayers, as well as the compact structure and the chemical inertness to sea water (Cl⁻). In addition, the NiCrAlSi sublayer can be regarded as an interlayer to release stress in both the a-C sublayer and the NiCrAlSi sublayer, mainly from corrosion products, which also plays an important role for the improved corrosion resistance.

通过磁控溅射在镍铬硅层中加入无定形碳膜，形成镍铬硅/a-C 多层，镍铬硅-镍铬硅涂层的调制周期范围为 131.6 纳米到 240.2 纳米，以进一步提高铜的耐腐蚀性，从而应用于海水养殖的热交换器。在完成结构表征后，使用电位极化和电化学阻抗光谱法比较了在总厚度（1 μm）不变的情况下，镍铬铝硅/a-C 多层的不同调制周期样品的腐蚀行为。极化曲线显示，调制周期为 240.2 nm、198.4 nm、158.4 nm 和双层数为 4、5、6 的镍铬铝硅/a-C 涂层的腐蚀电位比调制周期为 131.6 nm 和双层数为 7 的镍铬铝硅/a-C 涂层的腐蚀电位更负，这表明调制周期越小，耐腐蚀性越强。多层镀膜中的无定形 a-C 子层在提高耐腐蚀性方面发挥了积极作用，因为它在 NiCrAlSi 和 a-C 子层之间引入了更多的界面，同时还具有紧凑的结构和对海水（Cl-）的化学惰性。此外，NiCrAlSi 亚层可被视为一个夹层，可释放 a-C 亚层和 NiCrAlSi 亚层中的应力，主要来自腐蚀产物，这对提高耐腐蚀性也起着重要作用。

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引用次数: 0

Exfoliation of self-assembled 2D aluminum synthesized via magnetron sputtering 通过磁控溅射合成的自组装二维铝的剥离现象

IF 2 4区材料科学 Q3 MATERIALS SCIENCE, COATINGS & FILMS

Thin Solid Films

Pub Date : 2024-10-18 DOI: 10.1016/j.tsf.2024.140557

Bo Zhang , Petr Janicek , Tomas Wagner

Two-dimensional materials have been rapidly developed in recent years. As a type of two-dimensional material, 2D metals exhibit many unique physical and chemical properties. Here, we prepared two-dimensional aluminum materials via magnetron sputtering. The layers were exfoliated via sonication and annealing methods (thermal exfoliation methods). After exfoliation, the layers were observed via optical microscopy, scanning electron microscopy and transmission electron microscopy. The atomic force microscopy results show that the thicknesses of the layers range from ∼1 nm to ∼45 nm. The simulation results supported those two-dimensional layers formed in a self-assembly process.

近年来，二维材料得到了迅速发展。作为二维材料的一种，二维金属表现出许多独特的物理和化学特性。在这里，我们通过磁控溅射制备了二维铝材料。通过超声和退火方法（热剥离法）剥离层。剥离后，通过光学显微镜、扫描电子显微镜和透射电子显微镜对层进行观察。原子力显微镜结果表明，层的厚度从 1 纳米到 45 纳米不等。模拟结果支持这些二维层是在自组装过程中形成的。

引用次数: 0

Gold nanoparticles decoration of zinc oxide nanowalls on flexible substrates 金纳米粒子装饰柔性基底上的氧化锌纳米壁

IF 2 4区材料科学 Q3 MATERIALS SCIENCE, COATINGS & FILMS

Thin Solid Films

Pub Date : 2024-10-15 DOI: 10.1016/j.tsf.2024.140553

R. Ofek Almog , E. Shashar , K. Kadan-Jamal , Y. Shacham-Diamand

Metal oxide nanostructures decorated with noble metal nanoparticles are hybrid structures with a special interface that combines the unique properties of those two materials. Noble metal nanoparticles exhibit useful catalytic properties, and they can be functionalized with biomaterials. In this work, we use gold nanoparticles that can be functionalized using thiolated molecules bound to the metal surface. Zinc oxide nano-walls (NWs) are a high surface-to-volume ratio wide-bandgap semiconductor nanostructures that, due to their biocompatibility and non-toxicity characteristics, can be used in biosensing applications that involve contact with tissues and cells. ZnO nano-walls can be deposited from aqueous solutions at low temperatures, both on rigid and flexible substrates, using a simple and low-cost process that can be upscaled to high-volume production. In this work, we study the nucleation and growth of the ZnO nano-walls and we describe the gold nanoparticles decoration at three different schemes of surface functionalization. Among these schemes, we found that the process where ZnO nano-walls were deposited on polyimide substrates followed by activation using a self-assembled monolayer, resulted in a decoration with uniform size and distribution of gold nano-particles. That process was studied as a function of the growth temperature, solution concentration, and time. The morphology of the ZnO nano-walls was studied by Scanning Electron microscope imaging and the crystal structure was studied by X-ray diffraction.

用贵金属纳米颗粒装饰的金属氧化物纳米结构是一种混合结构，其特殊的界面结合了这两种材料的独特性能。贵金属纳米颗粒具有有用的催化特性，而且可以与生物材料功能化。在这项工作中，我们使用的金纳米粒子可通过与金属表面结合的硫醇分子实现功能化。氧化锌纳米壁（NWs）是一种高表面体积比的宽带隙半导体纳米结构，由于其生物相容性和无毒性特点，可用于涉及与组织和细胞接触的生物传感应用。氧化锌纳米壁可在低温下从水溶液中沉积在刚性和柔性基底上，其工艺简单、成本低廉，并可升级至大批量生产。在这项工作中，我们研究了氧化锌纳米壁的成核和生长，并介绍了三种不同表面功能化方案下的金纳米粒子装饰。在这些方案中，我们发现，将氧化锌纳米壁沉积在聚酰亚胺基底上，然后使用自组装单层进行活化的过程，能产生尺寸和分布均匀的金纳米粒子装饰。研究了这一过程与生长温度、溶液浓度和时间的函数关系。通过扫描电子显微镜成像研究了氧化锌纳米壁的形态，并通过 X 射线衍射研究了晶体结构。

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引用次数: 0

Impact of plasma power on plasma enhanced atomic layer deposited TiO2 as a spacer 等离子体功率对作为间隔物的等离子体增强型原子层沉积二氧化钛的影响

IF 2 4区材料科学 Q3 MATERIALS SCIENCE, COATINGS & FILMS

Thin Solid Films

Pub Date : 2024-10-11 DOI: 10.1016/j.tsf.2024.140551

Hee jun Yoon , Hyeongtag Jeon

As the size of devices is scaled down, micro-patterning technology is increasing in importance. In micro-patterning, spacers require precise thickness and uniform deposition at low temperature. To meet these requirements, atomic layer deposition (ALD), which can be controlled to an accurate thickness, was introduced. Therefore, we investigated plasma-enhanced ALD using radicals for high reactivity. Optical emission spectroscopy and a Langmuir probe were used to evaluate plasma properties such as radical intensity and plasma density at different plasma powers. Regardless of plasma power, growth per cycle and compositions of Ti and O remained constant. X-ray photoelectron spectroscopy showed that application of 500 W decreased the area of Ti₂O₃ from 20.2 % to 4.5 % compared with 100 W due to the increased amount of oxygen radicals. X-ray reflectivity results showed a 4.09 g/cm³ density of TiO₂ film at 100 W, which increased to 4.2 g/cm³ at 500 W, indicating a decrease of Ti₂O₃. Meanwhile, the wet etch rate of TiO₂ film was 1.72 Å/min at 100 W and 0.8 Å/min at 500 W, and the denser film had superior etch resistance. Finally, transmission electron microscopy showed that step coverage of TiO₂ films improved from 90.9 % to 99.9 % with increasing power. Thus, application of high power effectively improved the properties of TiO₂ films.

随着设备尺寸的缩小，微图案技术的重要性与日俱增。在微图案技术中，间隔层需要精确的厚度和低温下均匀的沉积。为了满足这些要求，我们引入了可控制精确厚度的原子层沉积（ALD）技术。因此，我们研究了使用高反应性自由基的等离子体增强 ALD。我们使用光学发射光谱和朗缪尔探针来评估等离子体的特性，如不同等离子体功率下的自由基强度和等离子体密度。无论等离子体功率如何，每个周期的生长以及 Ti 和 O 的成分都保持不变。X 射线光电子能谱显示，与 100 W 相比，由于氧自由基的数量增加，500 W 的应用使 Ti2O3 的面积从 20.2% 减少到 4.5%。X 射线反射率结果显示，100 W 时 TiO2 薄膜的密度为 4.09 g/cm3，500 W 时增加到 4.2 g/cm3，这表明 Ti2O3 有所减少。同时，TiO2 薄膜的湿蚀刻速率在 100 W 时为 1.72 Å/min，在 500 W 时为 0.8 Å/min，更致密的薄膜具有更好的抗蚀刻性。最后，透射电子显微镜显示，随着功率的增加，TiO2 薄膜的阶跃覆盖率从 90.9% 提高到 99.9%。因此，高功率的应用有效地改善了二氧化钛薄膜的性能。

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引用次数: 0

Compositional changes between metastable SnO and stable SnO2 in a sputtered film for p-type thin-film transistors 用于 p 型薄膜晶体管的溅射薄膜中蜕变的氧化锡和稳定的二氧化锡之间的成分变化

IF 2 4区材料科学 Q3 MATERIALS SCIENCE, COATINGS & FILMS

Thin Solid Films

Pub Date : 2024-10-09 DOI: 10.1016/j.tsf.2024.140548

Yong-Lie Sun , Toshihide Nabatame , Jong Won Chung , Tomomi Sawada , Hiromi Miura , Manami Miyamoto , Kazuhito Tsukagoshi

p-Type tin(II) oxide (SnO (Sn²⁺)) formation using radiofrequency (RF) reactive magnetron sputtering and post-deposition annealing (PDA) processes was investigated. The as-grown SnO_x film deposited from an SnO_x (SnO:Sn = 60:40) target by RF sputtering at an oxygen partial pressure (P_O2) of 0 Pa consisted of 2 % Sn (Sn⁰), 42 % Sn²⁺, and 56 % SnO₂ (Sn⁴⁺). However, compared with the Sn²⁺ fraction observed after PDA under N₂ and low-vacuum (∼1 Pa) conditions, that after PDA at 300 °C under high vacuum (< 5 × 10⁻⁴ Pa) (HVPDA) increased substantially to greater than 62 %. This result was attributed to the transformation from SnO₂ to SnO during HVPDA. A staggered bottom-gate thin-film transistor with an SnO channel (10 nm), which was fabricated by HVPDA at 300 °C, exhibited p-type properties, including a relatively high on-current/off-current (I_on/I_off) ratio of 5.1 × 10⁴ and a hole field-effect mobility (µ_FE) of 1.8 cm²/(V·s).

利用射频（RF）反应磁控溅射和沉积后退火（PDA）工艺研究了 p 型锡（II）氧化物（SnO (Sn2+)）的形成。在氧分压 (PO2) 为 0 Pa 的条件下，通过射频溅射从 SnOx（SnO:Sn = 60:40）靶材上沉积出的 SnOx 薄膜的原始生长状态包括 2 % 的 Sn (Sn0)、42 % 的 Sn2+ 和 56 % 的 SnO2 (Sn4+)。然而，与在 N2 和低真空（∼1 Pa）条件下进行 PDA 后观察到的 Sn2+ 部分相比，在 300 °C 高真空（< 5 × 10-4 Pa）条件下进行 PDA（HVPDA）后观察到的 Sn2+ 部分大幅增加，超过 62%。这一结果归因于在 HVPDA 期间从 SnO2 向 SnO 的转化。在 300 ℃ 下通过 HVPDA 制作的具有 SnO 沟道（10 nm）的交错底栅薄膜晶体管显示出 p 型特性，包括相对较高的导通/关断电流（Ion/Ioff）比（5.1 × 104）和 1.8 cm2/（V-s）的空穴场效应迁移率（µFE）。

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引用次数: 0

Hydrogen implantation in lanthanum thin films for ambient pressure hydride formation 在镧薄膜中进行氢植入以形成常压氢化物

IF 2 4区材料科学 Q3 MATERIALS SCIENCE, COATINGS & FILMS

Thin Solid Films

Pub Date : 2024-10-05 DOI: 10.1016/j.tsf.2024.140546

Portia J. Allen, Simeon Gilbert, Michael P. Siegal, Ping Lu, Peter A. Sharma

Near room temperature superconductivity of metal superhydrides has been shown both theoretically and experimentally at high pressures (

> 100

GPa). Taking advantage of room temperature superconductivity for engineering applications requires decreasing the pressure of formation while retaining the superconducting hydride phase. We implanted lanthanum thin films with various doses of hydrogen ions at ambient pressure in order to form a lanthanum hydride phase. We found evidence for granular superconductivity below 5 K consistent with the phase coexistence of lanthanum hydride and lanthanum. As the H

^{+}

dose increased,

T_{C}

decreased from 4.6 K to 3.2 K with broader superconducting transitions. Transmission electron microscopy showed increased substrate damage with increased ion dose and confirmed the granular structure of the films. Although a superhydride phase requires a higher H

^{+}

dose than what was attained in this work, we have demonstrated that ion implantation at ambient pressure is a feasible technique for superconducting lanthanum hydride formation.

在高压（100 GPa）下，金属超氢化物的近室温超导性已在理论和实验中得到证实。要在工程应用中利用室温超导性，就必须降低形成压力，同时保留超导氢化物相。我们在环境压力下用不同剂量的氢离子植入镧薄膜，以形成镧氢化物相。我们在 5 K 以下发现了颗粒状超导现象，这与氢化镧和镧相共存的现象一致。随着 H+ 剂量的增加，TC 从 4.6 K 下降到 3.2 K，超导跃迁范围更广。透射电子显微镜显示，随着离子剂量的增加，衬底的损伤也在增加，并证实了薄膜的颗粒结构。虽然超氢化物相需要的 H+ 剂量比这项研究中获得的更高，但我们已经证明，在常压下进行离子注入是形成超导氢化镧的可行技术。

{"title":"Hydrogen implantation in lanthanum thin films for ambient pressure hydride formation","authors":"Portia J. Allen, Simeon Gilbert, Michael P. Siegal, Ping Lu, Peter A. Sharma","doi":"10.1016/j.tsf.2024.140546","DOIUrl":"10.1016/j.tsf.2024.140546","url":null,"abstract":"<div><div>Near room temperature superconductivity of metal superhydrides has been shown both theoretically and experimentally at high pressures (<span><math><mrow><mo>></mo><mn>100</mn></mrow></math></span> GPa). Taking advantage of room temperature superconductivity for engineering applications requires decreasing the pressure of formation while retaining the superconducting hydride phase. We implanted lanthanum thin films with various doses of hydrogen ions at ambient pressure in order to form a lanthanum hydride phase. We found evidence for granular superconductivity below 5 K consistent with the phase coexistence of lanthanum hydride and lanthanum. As the H<span><math><msup><mrow></mrow><mrow><mo>+</mo></mrow></msup></math></span> dose increased, <span><math><msub><mrow><mi>T</mi></mrow><mrow><mi>C</mi></mrow></msub></math></span> decreased from 4.6 K to 3.2 K with broader superconducting transitions. Transmission electron microscopy showed increased substrate damage with increased ion dose and confirmed the granular structure of the films. Although a superhydride phase requires a higher H<span><math><msup><mrow></mrow><mrow><mo>+</mo></mrow></msup></math></span> dose than what was attained in this work, we have demonstrated that ion implantation at ambient pressure is a feasible technique for superconducting lanthanum hydride formation.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"807 ","pages":"Article 140546"},"PeriodicalIF":2.0,"publicationDate":"2024-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142437860","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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