Thin Solid Films最新文献_第7页

Argon flow effect on the properties and composition of diamond-like carbon films grown by plasma-enhanced chemical vapor deposition 氩流动对等离子体增强化学气相沉积类金刚石膜性能和组成的影响

IF 2 4区材料科学 Q3 MATERIALS SCIENCE, COATINGS & FILMS

Thin Solid Films

Pub Date : 2025-10-11 DOI: 10.1016/j.tsf.2025.140811

O.M. Chapura, V.V. Kovalenko, V.A. Tarala, M.G. Ambartsumov

Diamond-like carbon (DLC) films were synthesized on single-crystal silicon and glass substrates by plasma-enhanced chemical vapor deposition at varying argon flow in the methane/argon plasma-forming mixture. The resulting DLC films were studied by energy-dispersive spectroscopy, scanning electron microscopy, atomic force microscopy, Fourier-transform infrared spectroscopy, spectroscopic ellipsometry, Raman and ultraviolet-visible spectroscopy. It was found that the thickness of the DLC films decreases with increasing argon flow while the argon content increases throughout the entire volume of the films. The synthesized films were characterized by a refractive index of 2.16 and an extinction coefficient of 0.195 over the entire studied range of argon flow. At the same time, increasing the argon flow resulted in a decrease in the band gap from 1.19 to 1.14 eV and a decrease in the hydrogen concentration from 28.5 to 28 at. % in the coating material. The synthesized films were classified as amorphous hydrogenated diamond-like carbon films. Furthermore, calculations revealed that the increase in argon flow was accompanied by a decrease in the proportion of sp³-hybridized carbon atoms from 46.4 to 45.5 % and an increase of sp² cluster size from 0.79 to 0.81 nm. The most probable reason for this could be the introduction of high-energy argon ions into the coating material, facilitating the transition of subsurface sp³-hybridized carbon atoms to sp²-hybridized ones during the relaxation process.

采用等离子体增强化学气相沉积技术，在不同氩气流量的甲烷/氩气等离子体形成混合物中，在单晶硅和玻璃基底上合成了类金刚石（DLC）薄膜。采用能量色散光谱、扫描电镜、原子力显微镜、傅里叶变换红外光谱、椭偏光谱、拉曼光谱和紫外-可见光谱对制备的DLC薄膜进行了研究。结果表明，随着氩气流量的增加，DLC膜的厚度减小，而在膜的整个体积中，氩气含量增加。在整个氩气流动范围内，合成薄膜的折射率为2.16，消光系数为0.195。同时，增大氩气流量可使带隙从1.19 eV减小到1.14 eV，氢气浓度从28.5 At减小到28 At。在涂层材料中。合成的膜被归类为非晶氢化类金刚石膜。计算表明，随着氩气流量的增加，sp3杂化碳原子的比例从46.4%下降到45.5%，sp2簇尺寸从0.79 nm增加到0.81 nm。最可能的原因是在涂层材料中引入了高能氩离子，促进了表面下sp3杂化碳原子在弛豫过程中向sp2杂化碳原子的转变。

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引用次数: 0

Controllable tuning of reversible thermally induced phase transition and adaptive infrared emissivity in microcrystalline VO2 thin films via argon ion implantation 通过氩离子注入实现VO2微晶薄膜可逆热致相变和自适应红外发射率的可控调谐

IF 2 4区材料科学 Q3 MATERIALS SCIENCE, COATINGS & FILMS

Thin Solid Films

Pub Date : 2025-10-10 DOI: 10.1016/j.tsf.2025.140810

Andrii Nikolenko, Oleksandr Kolomys, Viktor Strelchuk, Petro Lytvyn, Denys Maziar, Maksym Alieksandrov, Borys Romanyuk, Oleksandr Dubikovskyi, Zinoviia Tsybrii, Yevhen Melezhyk, Viacheslav Zabudsky, Nataliia Kukhtaruk

The effects of argon ion (Ar⁺) implantation on the dynamics of infrared (IR) thermal emissivity and optical properties of microcrystalline vanadium dioxide (VO₂) thin films were investigated during the metal-insulator transition (MIT) using infrared thermography and Fourier-transform infrared (FTIR) spectroscopy. Thin films deposited on Si(100) substrates were Ar⁺-implanted at 180 keV with doses between 2.15 × 10¹⁵ and 5.36 × 10¹⁵ ions/cm². Temperature-dependent emissivity was examined in the mid- and long-wave infrared spectral ranges during heating-cooling cycles, with emphasis on hysteretic behavior associated with the VO₂(M1) ↔ VO₂(R) phase transition. Comparative analysis of pristine and implanted VO₂ films revealed a dose-dependent reduction of the transition temperature from 340 K in the pristine film to 321 K and 315 K, an increase in metallic-phase emissivity from 0.30 to 0.34 and 0.46 at the two implantation levels, and a broadening of the emissivity hysteresis loop from ∼7 K in the initial sample to ∼9 K in the implanted films. Moreover, the amplitude of the emissivity change across the phase transition decreased substantially, from 0.21 in the pristine film to 0.08 in the film implanted with the highest dose. These effects are discussed in relation to implantation-induced structural disorder, including enhanced defect density and strain relaxation, which modify the coexistence of metallic and insulating domains. The results highlight ion implantation as an effective approach for tailoring the emissive response of VO₂ thin films for adaptive infrared devices and thermal management applications.

采用红外热像仪和傅里叶变换红外光谱技术研究了氩离子（Ar +）注入对金属-绝缘体跃迁（MIT）过程中微晶二氧化钒（VO2）薄膜红外（IR）热发射率和光学性能的影响。在180 keV下以2.15 × 1015 ~ 5.36 × 1015离子/cm2注入Ar+，在Si（100）衬底上沉积薄膜。在加热-冷却循环过程中，研究了中波和长波红外光谱范围内的温度相关发射率，重点研究了与VO2（M1）↔VO2(R)相变相关的滞后行为。原始VO2薄膜和注入VO2薄膜的对比分析表明，原始VO2薄膜的转变温度从340 K降低到321 K和315 K，金属相发射率从0.30增加到0.34和0.46，在两个注入水平上，发射率滞后环从初始样品的~ 7 K扩大到注入膜的~ 9 K。此外，发射率在相变中的变化幅度显著减小，从原始膜的0.21降至最高剂量注入膜的0.08。这些影响与注入引起的结构紊乱有关，包括缺陷密度和应变松弛的增强，它们改变了金属和绝缘畴的共存。结果表明，离子注入是一种有效的方法，可以定制自适应红外器件和热管理应用中VO2薄膜的发射响应。

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引用次数: 0

Surface modification of copper by the formation of self-assembled monolayers at different concentrations of octadecanethiol in order to study aging process in 3.5 wt.% NaCl solution 采用不同浓度十八硫醇对铜进行表面改性，形成自组装单层膜，研究其在3.5 wt.% NaCl溶液中的时效过程

IF 2 4区材料科学 Q3 MATERIALS SCIENCE, COATINGS & FILMS

Thin Solid Films

Pub Date : 2025-10-07 DOI: 10.1016/j.tsf.2025.140808

Zahra Sabaghian , Reza Arefinia , Ali Davoodi

Self-assembled monolayers (SAMs) have attracted considerable interest for surface modification of metals due to their ability to tailor interfacial properties, enhance corrosion resistance, and improve hydrophobicity. In the present work, the aging process of octadecanethiol (ODT) SAMs was studied in a wide range of concentration (1, 10 and 100 mM) in 3.5 wt% NaCl. The aging process of ODT-SAMs was studied by different electrochemical methods: potentiodynamic dynamic polarization, linear polarization resistance, and electrochemical impedance spectroscopy. The experimental findings demonstrated that the SAM prepared using 100 mM ODT exhibited perfect corrosion inhibition performance. Specifically, after 1 h exposure to NaCl solution, the SAM exhibited superior corrosion inhibition (99.8%). During 48 h immersion, the polarization resistance (R_p) for all ODT-SAMs initially increases, then decreases, and finally stabilizes at a constant value. The atomic force microscope analysis revealed a positive correlation between ODT concentration and surface characteristics. Specifically, both surface roughness and coverage increased as ODT concentration rose. Moreover, contact angle measurements demonstrated that higher ODT concentrations led to enhanced hydrophobicity of the ODT-SAMs. Morphological examination was performed using scanning electron microscopy. Fourier-transform infrared analysis confirmed the presence of characteristic functional groups indicating the formation of ODT-SAM on the copper surface. After immersion in NaCl solution, the characteristic bands became intensified, indicating structural disordering of the monolayer. The impedance data facilitated a comprehensive analysis of the SAMs' key properties. This examination encompassed crucial parameters such as: monolayer thickness, molecular tilt angle and surface coverage. The aging mechanism of ODT-SAMs was well studied by both electrochemical and surface analysis methods.

自组装单层（SAMs）由于具有调整界面性质、增强耐腐蚀性和改善疏水性的能力，在金属表面改性方面引起了相当大的兴趣。在3.5 wt% NaCl溶液中，研究了大浓度（1、10和100 mM）下十八硫醇（ODT） SAMs的老化过程。采用动电位动态极化、线性极化电阻和电化学阻抗谱等电化学方法研究了ODT-SAMs的老化过程。实验结果表明，使用100 mM ODT制备的SAM具有良好的缓蚀性能。具体来说，在NaCl溶液中暴露1 h后，SAM表现出优异的缓蚀性能（99.8%）。浸泡48 h后，所有ODT-SAMs的极化电阻Rp先增大后减小，最后稳定在一个恒定值。原子力显微镜分析显示，ODT浓度与表面特性呈正相关。随着ODT浓度的升高，表面粗糙度和覆盖度均增加。此外，接触角测量表明，较高的ODT浓度导致ODT- sam的疏水性增强。用扫描电镜进行形态学检查。傅里叶变换红外分析证实，铜表面存在特征官能团，表明ODT-SAM的形成。在NaCl溶液中浸泡后，特征带增强，表明单层结构无序。阻抗数据有助于对地对空导弹的关键特性进行全面分析。这项检查包括关键参数，如：单层厚度，分子倾斜角度和表面覆盖。采用电化学和表面分析方法研究了ODT-SAMs的老化机理。

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引用次数: 0

Properties of Nb-doped TiO2 films prepared by grid-assisted magnetron sputtering at different substrate temperatures and Nb doping levels 栅格辅助磁控溅射制备Nb掺杂TiO2薄膜在不同衬底温度和Nb掺杂水平下的性能

IF 2 4区材料科学 Q3 MATERIALS SCIENCE, COATINGS & FILMS

Thin Solid Films

Pub Date : 2025-10-03 DOI: 10.1016/j.tsf.2025.140807

Francisco Alfaro , Aline M. Morais , Rafael G. Delatorre , Julio C. Sagás , Fábio D. Origo , Bruno L.D. Santos , J. Stryhalski , Waldemar A.A. Macedo , Carlos J. Tavares , Diego A. Duarte

Nb-doped TiO₂ thin films were deposited on glass substrates by grid-assisted magnetron sputtering at different temperatures and Nb doping levels. The films were characterized by profilometry, X-ray diffraction, field-emission scanning electron microscopy, atomic force microscopy, spectrophotometry, and X-ray photoelectron spectroscopy. Electrical and thermoelectric properties were evaluated using four-wire probe method and Seebeck coefficient. Results showed that substrate heating enhanced crystallinity and grain growth, while the Nb doping improved charge carrier transport. Chemical analysis confirmed Nb⁵⁺ states and Nb segregation toward the surface in films deposited at 300 °C. Electrical resistivity decreased by up to five orders of magnitude, reaching 10^-2 Ω·cm at Nb concentrations lower than 1.0 %. No thermoelectric effect was observed. Films exhibited average transmittances above 70 %. These findings demonstrate the critical role of substrate temperature and Nb doping level in tuning the multifunctional properties of Nb-doped TiO₂ thin films prepared by grid-assisted magnetron sputtering, highlighting their potential for transparent conducting applications.

采用网格辅助磁控溅射技术，在不同温度和不同铌掺杂水平下，在玻璃衬底上沉积了Nb掺杂TiO2薄膜。用轮廓术、x射线衍射、场发射扫描电镜、原子力显微镜、分光光度法和x射线光电子能谱对膜进行了表征。利用四线探针法和塞贝克系数对材料的电学和热电性能进行了评价。结果表明，衬底加热增强了晶体结晶度和晶粒生长，Nb掺杂改善了载流子输运。化学分析证实了在300℃下沉积的薄膜中有Nb5+态和Nb向表面偏析。铌浓度低于1.0%时，电阻率下降了5个数量级，达到10-2 Ω·cm。未观察到热电效应。薄膜的平均透过率在70%以上。这些发现表明，衬底温度和铌掺杂水平在调节栅格辅助磁控溅射制备的铌掺杂TiO2薄膜的多功能特性中起着关键作用，突出了其在透明导电方面的应用潜力。

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引用次数: 0

All-oxide thin-film transistors with enhanced performance via implementation of stacked semiconductor/insulator multi-channel structures 采用堆叠半导体/绝缘体多通道结构的全氧化物薄膜晶体管的性能得到了提高

IF 2 4区材料科学 Q3 MATERIALS SCIENCE, COATINGS & FILMS

Thin Solid Films

Pub Date : 2025-10-03 DOI: 10.1016/j.tsf.2025.140809

Pei Yan , Jiyuan Zhu , Bojia Chen , Jiong Liu , Xinming Wu , Xuefeng Wu , David W. Zhang , Xingli Zou , Qingqing Sun , Shen Hu , Li Ji

As display technology rapidly advances, there is an increasing demand for high-performance thin-film transistors (TFTs) to serve as pixel switching and driving modules. Oxide TFTs offer several advantages, including high mobility and high light transmittance. Moreover, the all-oxide structure facilitates integration with back-end-of-line (BEOL) compatible electronic devices. In this study, we introduce a multi-channel TFT structure based on Hf-doped In₂O₃ /HfO₂, fabricated using the supercycle growth method in atomic layer deposition (ALD) to enhance performance. We assess how the number of channels affects the performances of TFTs, particularly the field-mobility (μ_FE) and on-state current. Compared to mono-channel TFTs, the triple-channel TFTs exhibits superior electrical characteristics, with the μ_FE increasing by approximately 2.4 times, from 4.1 cm²V^-1s^-1 to 9.7 cm²V^-1s^-1, and a 3.2-fold increase in output current. Additionally, the triple-channel TFTs demonstrate an exceptional switch ratio (I_on/I_off) of 10⁷ and the subthreshold swing as low as 0.18 V/dec. The energy band discontinuity and electron affinity difference in the material heterostructure lead to the formation of quasi-2DEG channel at the interface, which explains the observed performance improvements. Based on these findings, we develop all-oxide TFTs using a low-temperature process (<180 °C) through the all-ALD process, providing advantages for integrating TFTs with BEOL.

随着显示技术的快速发展，对高性能薄膜晶体管（TFTs）作为像素开关和驱动模块的需求越来越大。氧化物tft具有几个优点，包括高迁移率和高透光率。此外，全氧化物结构有利于与后端线（BEOL）兼容的电子设备集成。在这项研究中，我们引入了一种基于hf掺杂In2O3 /HfO2的多通道TFT结构，采用原子层沉积（ALD）的超循环生长方法制备，以提高性能。我们评估了通道数量如何影响TFTs的性能，特别是场迁移率（μFE）和导通电流。与单通道tft相比，三通道tft表现出优异的电特性，μFE从4.1 cm2V-1s-1提高到9.7 cm2V-1s-1，增加了约2.4倍，输出电流增加了3.2倍。此外，三通道tft表现出107的异常开关比（离子/开关）和低至0.18 V/dec的亚阈值摆幅。材料异质结构中的能带不连续和电子亲和差异导致界面处形成准2deg通道，这解释了观察到的性能改善。基于这些发现，我们使用低温工艺（<180°C）通过all-ALD工艺开发了全氧化物tft，为将tft与BEOL集成提供了优势。

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引用次数: 0

Simultaneous barrier reduction and effective doping in CdTe solar cells using CuBr 利用cur在CdTe太阳能电池中同时降低障垒和有效掺杂

IF 2 4区材料科学 Q3 MATERIALS SCIENCE, COATINGS & FILMS

Thin Solid Films

Pub Date : 2025-09-28 DOI: 10.1016/j.tsf.2025.140806

Banghua Liu , Ziwei Xu , Shiyu Yuan , Fu You , Xin Zhang , Yunpu Tai , Di Zhang , Komiljon Yakubov , Jingquan Zhang , Chebotareva Alla , Guanggen Zeng

Introducing a back-contact material is a crucial strategy for enhancing the efficiency of cadmium telluride (CdTe) solar cells. This work pioneers the application of a solution-processed copper(I) bromide (CuBr) layer as an efficient back-contact for CdTe solar cells. The CuBr layer serves a dual purpose: it effectively reduces the back-contact barrier, as evidenced by the elimination of the upward bending in Mott-Schottky curves and the "roll-over" phenomenon in dark current density-voltage characteristics, and it acts as a source for copper doping into the CdTe absorber. This doping increases the hole concentration, leading to a significant enhancement in the apparent carrier density and a reduced saturation dark current density. Consequently, key device parameters were substantially improved, including an increase in open-circuit voltage (from 788 mV to 824 mV) and a reduction in series resistance (from 4.45 Ω·cm² to 2.90 Ω·cm²). Ultimately, an optimized device with an FTO/MZO/CdSe/CdTe/CuBr/Au structure achieved a power conversion efficiency of 14.7 %.

引入背接触材料是提高碲化镉（CdTe）太阳能电池效率的关键策略。这项工作开创了溶液处理的溴化铜（CuBr）层作为CdTe太阳能电池的有效背触点的应用。cur层有双重作用：它有效地减少了背接触障壁，这可以通过消除莫特-肖特基曲线的向上弯曲和暗电流密度-电压特性中的“翻转”现象来证明，它可以作为铜掺杂到CdTe吸收器中的来源。这种掺杂增加了空穴浓度，导致表观载流子密度的显著增强和饱和暗电流密度的降低。因此，关键器件参数得到了实质性改善，包括开路电压增加（从788 mV到824 mV）和串联电阻降低（从4.45 Ω·cm2到2.90 Ω·cm2）。最终，FTO/MZO/CdSe/CdTe/ cur /Au结构优化器件的功率转换效率达到14.7%。

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引用次数: 0

A comprehensive study of CrN/AlCrN-based monolayers and architected multilayers 基于CrN/ alcrn的单层和多层结构的综合研究

IF 2 4区材料科学 Q3 MATERIALS SCIENCE, COATINGS & FILMS

Thin Solid Films

Pub Date : 2025-09-25 DOI: 10.1016/j.tsf.2025.140804

Yutao Zhang , Corinne Nouveau , Aurélien Besnard , José Outeiro , Alex Montagne , Denis Lagadrillère , Andrzej Kusiak , Luc Imhoff

Cr, CrN, and AlCrN monolayers and Cr/CrN/AlCrN multilayers were deposited on rough/mirror-polished tungsten carbide and silicon substrates by Direct Current magnetron sputtering. The multilayers were developed based on the optimized monolayers. In this paper, we introduce and discuss the optimization steps and performances of the AlCrN monolayers and the CrN/AlCrN-based multilayers. The influence of the deposition temperature and substrate bias voltage on the coating properties, the number of interfaces, and the thickness of CrN/AlCrN pairs were systematically studied for the monolayers and multilayers, respectively. The composition of the monolayers was determined by energy dispersive x-ray spectroscopy and verified by x-ray photoelectron spectrometry. Scanning electron microscopy observations permitted to define the microstructure and thickness of the coatings. Ball-on-disc tests were realized to determine the coefficient of friction and wear rate. The hardness and elastic modulus were calculated from nanoindentation tests. The adhesion was quantified by scratch-tests. The thermal conductivity measurement was obtained by Modulated Photo Thermal Radiometry. The optimized coatings have a dense and homogeneous surface morphology on WCCo substrates, are well crystallized, present a grain size lower than 10 nm, a friction coefficient of 0.5, and low wear rates. The results indicate that the optimal AlCrN monolayers are obtained at 300 °C/-250 V. The optimized AlCrN monolayers also have tensile and mostly compressive stresses, a hardness of 25.8 GPa, an elastic modulus of 170 GPa, and a Lc2 critical load of 58 N. The optimal multilayers are the one with decreasing CrN/AlCrN pairs thickness from substrate to top layer and the one with a doubled number of interfaces. The multilayers have low residual stresses from -47.7 MPa to 44.8 MPa, a hardness from 16.1 to 24.8 GPa, an elastic modulus from 429 to 670 GPa, a Lc2 critical load from 47 to 52 N, a low and similar thermal conductivity from 1.95 to 2.42 W·m^-1·K^-1.

采用直流磁控溅射技术在粗糙/镜面抛光的碳化钨和硅衬底上沉积了Cr、CrN和AlCrN单层和Cr/CrN/AlCrN多层。在优化后的单层材料的基础上制备了多层材料。在本文中，我们介绍和讨论了优化步骤和优化性能的AlCrN单层和基于CrN/AlCrN多层。系统地研究了沉积温度和衬底偏置电压对单层和多层CrN/AlCrN涂层性能、界面数量和对厚度的影响。用能量色散x射线光谱法测定了单层膜的组成，并用x射线光电子能谱法对其进行了验证。扫描电子显微镜观察可以确定涂层的微观结构和厚度。实现了球盘摩擦试验，确定了摩擦系数和磨损率。通过纳米压痕试验计算了硬度和弹性模量。通过划痕试验对附着力进行量化。热导率测量采用调制光热辐射法。优化后的涂层在WCCo基体上具有致密均匀的表面形貌，结晶良好，晶粒尺寸小于10 nm，摩擦系数为0.5，磨损率低。结果表明，在300°C/-250 V的温度下，获得了最佳的AlCrN单层膜。优化后的AlCrN单层膜具有拉伸应力和压应力，硬度为25.8 GPa，弹性模量为170 GPa， Lc2临界载荷为58 n。优化后的多层膜从衬底到顶层CrN/AlCrN对厚度减小，界面数增加一倍。复合材料的残余应力在-47.7 ~ 44.8 MPa之间，硬度在16.1 ~ 24.8 GPa之间，弹性模量在429 ~ 670 GPa之间，Lc2临界载荷在47 ~ 52 N之间，导热系数在1.95 ~ 2.42 W·m-1·K-1之间。

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引用次数: 0

The biennial TACT International Thin Films Conference (TACT 2023) 两年一度的TACT国际薄膜会议（TACT 2023）

IF 2 4区材料科学 Q3 MATERIALS SCIENCE, COATINGS & FILMS

Thin Solid Films

Pub Date : 2025-09-25 DOI: 10.1016/j.tsf.2025.140805

Kao-Shuo Chang, Yi-Cheng Lin, Ming-Tzer Lin, Jr-Jeng Ruan, Ta-Chin Wei, Yi-Jia Chen

引用次数: 0

A systematic study on the influence of microtopography of aluminum alloy substrates on the formation kinetics and corrosion resistance of V/Zr-based conversion coatings 铝合金基体微形貌对V/ zr基转化涂层形成动力学和耐蚀性影响的系统研究

IF 2 4区材料科学 Q3 MATERIALS SCIENCE, COATINGS & FILMS

Thin Solid Films

Pub Date : 2025-09-24 DOI: 10.1016/j.tsf.2025.140803

Jianzhong Li , Mingshi Li , Zhichun Cui , Peidong Li

The influence of aluminum alloy microtopography on the electrochemical activity, formation kinetics and corrosion resistance of V/Zr-based conversion coating (V/ZrCC) was investigated using electrochemical methods. The results indicate that the differences in surface roughness (R_a) and average peak-to-valley depth (R_z) of aluminum alloy substrates lead to differences in the electrochemical activity, coating formation kinetics, and corrosion resistance performance of V/ZrCC. The high R_a value increases the surface area and the active site, thereby the aluminum alloy substrate exhibiting high electrochemical activity. The aluminum alloy has the highest electrochemical activity when the R_a value is 0.52 μm. The R_z value has a significant effect on the formation kinetics and corrosion resistance of V/ZrCC, Optimal corrosion resistance (Charge Transfer Resistance (Rct) = 19.88 kΩ·cm²) occurs at R_z = 4.29 μm, while R_z > 5.22 μm causes 34 % lower Rct due to incomplete coverage.

采用电化学方法研究了铝合金微形貌对V/ zr基转化涂层（V/ZrCC）电化学活性、形成动力学和耐蚀性的影响。结果表明，铝合金基体表面粗糙度（Ra）和平均峰谷深度（Rz）的差异导致了V/ZrCC的电化学活性、镀层形成动力学和耐腐蚀性能的差异。高Ra值增加了铝合金基体的表面积和活性位点，从而使铝合金基体表现出较高的电化学活性。Ra值为0.52 μm时，铝合金的电化学活性最高。Rz值对V/ZrCC的形成动力学和耐蚀性有显著影响，在Rz = 4.29 μm时出现最佳耐蚀性（电荷传递电阻Rct = 19.88 kΩ·cm²），而Rz >； 5.22 μm由于覆盖不完全，Rct降低34%。

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引用次数: 0

Non-reactive Direct Current and chopped High-Power Impulse Magnetron Sputtering deposition of Indium Tin Oxide thin films with enhanced optical and electrical properties 无反应直流电切高功率脉冲磁控溅射沉积氧化铟锡薄膜，提高其光学和电学性能

IF 2 4区材料科学 Q3 MATERIALS SCIENCE, COATINGS & FILMS

Thin Solid Films

Pub Date : 2025-09-23 DOI: 10.1016/j.tsf.2025.140802

Rachid Oubaki, Salah-Eddine Bouzarmine, Younes Lablali, Youssef Samih, Olayinka O. Abegunde, Jones Alami, Mohammed Makha

Tin doped indium oxide (ITO) thin films were deposited by an industrial PVD system using Direct-current Magnetron Sputtering (DcMS) and chopped High-Power Impulse Magnetron Sputtering (c-HiPIMS). The depositions were made without extra heating and oxygen supply, with working pressure ranging from 0.2 to 6 Pa. ITO films with a higher figure of merit (FM) were obtained when using c-HiPIMS below 1 Pa, attributed to higher transmittance and reduced resistivity. The ITO films deposited by c-HiPIMS exhibit a significant reduction of the FM at pressures higher than 1 Pa due to the decreased charge carrier concentration. c-HiPIMS afford higher and almost constant FM of ITO at pressures between 0.2 – 1 Pa compared to DcMS, indicating the stability of the process in non-reactive mode within this pressure range. The difference in the FM between the two processes was explained based on the process energetics revealed by SRIM simulations.

采用直流磁控溅射（DcMS）和斩波高功率脉冲磁控溅射（c-HiPIMS）技术在工业PVD系统上沉积了锡掺杂氧化铟（ITO）薄膜。在没有额外加热和氧气供应的情况下进行沉积，工作压力范围为0.2至6 Pa。当使用低于1 Pa的c-HiPIMS时，由于更高的透射率和降低的电阻率，获得了具有更高品质系数（FM）的ITO薄膜。c-HiPIMS沉积的ITO薄膜在高于1 Pa的压力下，由于载流子浓度的降低，FM显著降低。与DcMS相比，c-HiPIMS在0.2 - 1 Pa的压力下提供更高且几乎恒定的ITO调频，表明在该压力范围内该工艺在非反应模式下的稳定性。基于SRIM模拟所揭示的过程能量学，解释了两种过程的调频差异。

引用次数: 0