Thin Solid Films最新文献_第8页

Improving insulating film deposition stability with atmospheric pressure plasma jet by post-mixing precursor feedthrough with hollow electrode 通过前驱体与空心电极的后混合馈入，提高常压等离子体喷射沉积绝缘薄膜的稳定性

IF 2 4区材料科学 Q3 MATERIALS SCIENCE, COATINGS & FILMS

Thin Solid Films

Pub Date : 2024-10-31 DOI: 10.1016/j.tsf.2024.140562

Xinglei Cui, Long Li, Zhonglian Li, Runhua Li, Yizhuo Wang, Xi Zhu, Zhi Fang

Film deposition with atmospheric pressure plasma jet (APPJ) is an effective approach to enhance surface performances of insulating materials for its high reactivity and flexible operation. However, the plasma-activated precursor will inevitably produce inner-wall contamination in the dielectric tube as it travels through the electrode gap, deteriorating film deposition stability during long-term operation. In this paper, a post-mixing precursor feedthrough is designed to suppress the dielectric tube contamination and improve film deposition stability. The influences of traditional pre-mixing feedthrough and post-mixing feedthrough proposed in this paper on discharge and film deposition stability are compared. The thickness of inner-wall contamination is acquired by image processing technique. The electrical and optical discharge characteristic variations with operation duration are diagnosed to evaluate the discharge stability. The film performance is characterized by the water contact angle (WCA) and flashover voltage. Finally, scanning electron microscope (SEM) and X-ray photoelectron spectroscopy (XPS) measurements are performed for the film physicochemical property variations to explore the mechanism about the effect of precursor feedthrough on film deposition stability. The results indicate that the thickness of the contamination is reduced by 79.9 % for the post-mixing feedthrough after a 30-minute operation. Contamination growth increases the initial discharge voltage and decreases the discharge strength, which is remarkably inhibited for the post-mixing feedthrough. The degradation of WCA and flashover voltage for the post-mixing feedthrough is <10 % after a 30-minute operation. The film physicochemical properties for the post-mixing feedthrough exhibit no spectacular change according to SEM and XPS results. Whereas, the ratio of high-oxidized silicone bonds for the pre-mixing feedthrough is reduced and the degree of cross-linking is drastically decreased. This paper provides a reference for optimizing precursor feedthrough to improve the stability of film deposition with APPJ.

使用常压等离子喷射（APPJ）沉积薄膜是提高绝缘材料表面性能的有效方法，因为它具有高反应性和灵活的操作性。然而，等离子体激活的前驱体在通过电极间隙时，不可避免地会在介质管内产生内壁污染，从而在长期运行过程中降低薄膜沉积的稳定性。本文设计了一种后混合前驱体馈入装置，以抑制介质管污染并提高薄膜沉积稳定性。比较了传统的预混合贯穿件和本文提出的后混合贯穿件对放电和薄膜沉积稳定性的影响。通过图像处理技术获得了内壁污染的厚度。诊断随运行时间变化的电气和光学放电特性，以评估放电稳定性。薄膜的性能由水接触角（WCA）和闪蒸电压来表征。最后，通过扫描电子显微镜（SEM）和 X 射线光电子能谱（XPS）测量薄膜的物理化学性质变化，以探索前驱体馈入对薄膜沉积稳定性的影响机制。结果表明，在 30 分钟的操作后，混合后馈入的污染厚度减少了 79.9%。污染增长会增加初始放电电压并降低放电强度，而混合后馈入可显著抑制污染增长。经过 30 分钟的操作后，混合后贯穿件的 WCA 和闪络电压降低了 10%。根据扫描电子显微镜（SEM）和 XPS 的结果，混合后贯穿件的薄膜物理化学特性没有发生明显变化。然而，预混合贯穿件的高氧化硅键比例降低了，交联度也急剧下降。本文为优化前驱体通量以提高使用 APPJ 沉积薄膜的稳定性提供了参考。

{"title":"Improving insulating film deposition stability with atmospheric pressure plasma jet by post-mixing precursor feedthrough with hollow electrode","authors":"Xinglei Cui, Long Li, Zhonglian Li, Runhua Li, Yizhuo Wang, Xi Zhu, Zhi Fang","doi":"10.1016/j.tsf.2024.140562","DOIUrl":"10.1016/j.tsf.2024.140562","url":null,"abstract":"<div><div>Film deposition with atmospheric pressure plasma jet (APPJ) is an effective approach to enhance surface performances of insulating materials for its high reactivity and flexible operation. However, the plasma-activated precursor will inevitably produce inner-wall contamination in the dielectric tube as it travels through the electrode gap, deteriorating film deposition stability during long-term operation. In this paper, a post-mixing precursor feedthrough is designed to suppress the dielectric tube contamination and improve film deposition stability. The influences of traditional pre-mixing feedthrough and post-mixing feedthrough proposed in this paper on discharge and film deposition stability are compared. The thickness of inner-wall contamination is acquired by image processing technique. The electrical and optical discharge characteristic variations with operation duration are diagnosed to evaluate the discharge stability. The film performance is characterized by the water contact angle (WCA) and flashover voltage. Finally, scanning electron microscope (SEM) and X-ray photoelectron spectroscopy (XPS) measurements are performed for the film physicochemical property variations to explore the mechanism about the effect of precursor feedthrough on film deposition stability. The results indicate that the thickness of the contamination is reduced by 79.9 % for the post-mixing feedthrough after a 30-minute operation. Contamination growth increases the initial discharge voltage and decreases the discharge strength, which is remarkably inhibited for the post-mixing feedthrough. The degradation of WCA and flashover voltage for the post-mixing feedthrough is <10 % after a 30-minute operation. The film physicochemical properties for the post-mixing feedthrough exhibit no spectacular change according to SEM and XPS results. Whereas, the ratio of high-oxidized silicone bonds for the pre-mixing feedthrough is reduced and the degree of cross-linking is drastically decreased. This paper provides a reference for optimizing precursor feedthrough to improve the stability of film deposition with APPJ.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"808 ","pages":"Article 140562"},"PeriodicalIF":2.0,"publicationDate":"2024-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142577882","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Photocatalytic activity of ZnO- and TiO2- coated poly (methyl methacrylate) microcapsules by atomic layer deposition for water purification 利用原子层沉积技术提高 ZnO- 和 TiO2- 涂层聚（甲基丙烯酸甲酯）微胶囊的光催化活性以净化水

IF 2 4区材料科学 Q3 MATERIALS SCIENCE, COATINGS & FILMS

Thin Solid Films

Pub Date : 2024-10-30 DOI: 10.1016/j.tsf.2024.140552

Marta A. Forte , Ricardo M. Silva , M.Sameiro T. Gonçalves , Rui F. e Silva , Carlos J. Tavares

Poly (methyl methacrylate) (PMMA) is a common everyday polymer material that can be used as a substrate to improve the performance of functional coatings. In this work, PMMA microcapsules (PMMA-MCs) are coated with photocatalytic metal-oxide thin films. A low temperature (100 °C) atomic layer deposition of ZnO and TiO₂ on PMMA-MCs is described to form a three-dimensional structured composite. Scanning electron microscopy observations confirms that the ZnO and TiO₂ thin films are conformal to the spherical surface of the PMMA-MCs substrates, creating a greater photocatalytic active surface area. The photocatalytic activity of the prepared ZnO- and TiO₂-PMMA-MCs composites towards the mineralization of methylene blue (MB), a model pollutant, are investigated. Under UV–VIS irradiation, the ZnO-PMMA-MCs are more efficient towards MB dye degradation. Therefore, the proposed preparation approach for core-shell structured composites is considered as a valid alternative to the conventional routes for the development of efficient supported photocatalysts in heat sensitive materials for water purification application.

聚甲基丙烯酸甲酯（PMMA）是一种常见的日常聚合物材料，可用作提高功能涂层性能的基底。在这项研究中，PMMA 微胶囊（PMMA-MCs）被涂上了光催化金属氧化物薄膜。通过低温（100 °C）原子层沉积 ZnO 和 TiO2，在 PMMA-MCs 上形成了一种三维结构的复合材料。扫描电子显微镜观察证实，ZnO 和 TiO2 薄膜与 PMMA-MCs 基质的球形表面吻合，形成了更大的光催化活性表面积。研究了所制备的 ZnO- 和 TiO2-PMMA-MCs 复合材料对模型污染物亚甲基蓝（MB）矿化的光催化活性。在紫外可见光照射下，ZnO-PMMA-MCs 对 MB 染料的降解效率更高。因此，所提出的核壳结构复合材料的制备方法被认为是开发用于水净化应用的高效热敏材料支撑光催化剂的传统方法的有效替代方法。

{"title":"Photocatalytic activity of ZnO- and TiO2- coated poly (methyl methacrylate) microcapsules by atomic layer deposition for water purification","authors":"Marta A. Forte , Ricardo M. Silva , M.Sameiro T. Gonçalves , Rui F. e Silva , Carlos J. Tavares","doi":"10.1016/j.tsf.2024.140552","DOIUrl":"10.1016/j.tsf.2024.140552","url":null,"abstract":"<div><div>Poly (methyl methacrylate) (PMMA) is a common everyday polymer material that can be used as a substrate to improve the performance of functional coatings. In this work, PMMA microcapsules (PMMA-MCs) are coated with photocatalytic metal-oxide thin films. A low temperature (100 °C) atomic layer deposition of ZnO and TiO<sub>2</sub> on PMMA-MCs is described to form a three-dimensional structured composite. Scanning electron microscopy observations confirms that the ZnO and TiO<sub>2</sub> thin films are conformal to the spherical surface of the PMMA-MCs substrates, creating a greater photocatalytic active surface area. The photocatalytic activity of the prepared ZnO- and TiO<sub>2</sub>-PMMA-MCs composites towards the mineralization of methylene blue (MB), a model pollutant, are investigated. Under UV–VIS irradiation, the ZnO-PMMA-MCs are more efficient towards MB dye degradation. Therefore, the proposed preparation approach for core-shell structured composites is considered as a valid alternative to the conventional routes for the development of efficient supported photocatalysts in heat sensitive materials for water purification application.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"807 ","pages":"Article 140552"},"PeriodicalIF":2.0,"publicationDate":"2024-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142530671","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Growth and characterization of Sb2(SxSe1-x)3 thin films prepared by chemical-molecular beam deposition for solar cell applications 通过化学分子束沉积制备的用于太阳能电池的 Sb2（SxSe1-x）3 薄膜的生长和特性分析

IF 2 4区材料科学 Q3 MATERIALS SCIENCE, COATINGS & FILMS

Thin Solid Films

Pub Date : 2024-10-30 DOI: 10.1016/j.tsf.2024.140554

T.M. Razykov , K.М. Kuchkarov , B.A. Ergashev , Lukas Schmidt-Mende , Tim Mayer , M. Tivanov , М. Makhmudov , D.Z. Isakov , R. Khurramov , M. Primmatov , K.F. Shakhriev , Sh.B. Utamuradova , R.T. Yuldoshov

Antimony sulfide selenide, Sb₂(S_xSe_1-x)₃ (x = 0–1), is a tunable bandgap compound that combines the advantages of antimony sulfide (Sb₂S₃) and antimony selenide (Sb₂Se₃). This material shows great potential as a light-absorbing material for low-cost, low-toxicity, and highly stable thin-film solar cells. In this study, Sb₂(S_xSe_1-x)₃ thin films were deposited by chemical-molecular beam deposition on soda-lime glass substrates using antimony (Sb), selenium (Se), and sulfur (S) precursors at a substrate temperature of 420 °C. By independently controlling the source temperatures of Sb, Se, and S, Sb₂(S_xSe_1-x)₃ thin films with varying component ratios were obtained. Scanning electron microscopy revealed significant changes in the surface morphology of the films depending on the elemental ratio of [S]/([S]+[Se]). Crystallites shaped like cylindrical microrods with d = 0.5–2 µm diameter and l = 3–5 µm length were grown at a certain angle on the substrate. X-ray diffraction patterns showed peaks corresponding to the orthorhombic structures of Sb₂Se₃, Sb₂S₃ and their ternary compounds Sb₂(S_xSe_1-x)₃. The optical characterization revealed a high absorption coefficient of 10⁵ cm⁻¹ in the visible and near-infrared light regions. The band gap of the compounds changed almost linearly from 1.2 eV to 1.36 eV with a change in the ratio of elements [S]/([S]+[Se]) from 0.03 to 0.08.

硫化硒化锑（Sb2(SxSe1-x)3 (x = 0-1)）是一种可调带隙化合物，它结合了硫化锑（Sb2S3）和硒化锑（Sb2Se3）的优点。这种材料作为低成本、低毒性和高稳定性薄膜太阳能电池的吸光材料，显示出巨大的潜力。在这项研究中，使用锑（Sb）、硒（Se）和硫（S）前驱体，通过化学分子束沉积法在钠钙玻璃基底上沉积了 Sb2(SxSe1-x)3 薄膜，基底温度为 420 ℃。通过独立控制锑、硒和硫的源温度，获得了不同成分比例的 Sb2(SxSe1-x)3 薄膜。扫描电子显微镜显示，薄膜的表面形貌随[S]/（[S]+[Se]）元素比例的不同而发生显著变化。在基底上以一定的角度生长出了直径为 d = 0.5-2 微米、长度为 l = 3-5 微米的圆柱形微晶。X 射线衍射图样显示出与 Sb2Se3、Sb2S3 及其三元化合物 Sb2(SxSe1-x)3 的正交结构相对应的峰值。光学特性分析表明，该化合物在可见光和近红外线区域的吸收系数高达 105 cm-1。随着元素[S]/（[S]+[Se]）的比例从 0.03 变为 0.08，这些化合物的带隙几乎从 1.2 eV 线性地变为 1.36 eV。

{"title":"Growth and characterization of Sb2(SxSe1-x)3 thin films prepared by chemical-molecular beam deposition for solar cell applications","authors":"T.M. Razykov , K.М. Kuchkarov , B.A. Ergashev , Lukas Schmidt-Mende , Tim Mayer , M. Tivanov , М. Makhmudov , D.Z. Isakov , R. Khurramov , M. Primmatov , K.F. Shakhriev , Sh.B. Utamuradova , R.T. Yuldoshov","doi":"10.1016/j.tsf.2024.140554","DOIUrl":"10.1016/j.tsf.2024.140554","url":null,"abstract":"<div><div>Antimony sulfide selenide, Sb<sub>2</sub>(S<sub>x</sub>Se<sub>1-x</sub>)<sub>3</sub> (<em>x</em> = 0–1), is a tunable bandgap compound that combines the advantages of antimony sulfide (Sb<sub>2</sub>S<sub>3</sub>) and antimony selenide (Sb<sub>2</sub>Se<sub>3</sub>). This material shows great potential as a light-absorbing material for low-cost, low-toxicity, and highly stable thin-film solar cells. In this study, Sb<sub>2</sub>(S<sub>x</sub>Se<sub>1-x</sub>)<sub>3</sub> thin films were deposited by chemical-molecular beam deposition on soda-lime glass substrates using antimony (Sb), selenium (Se), and sulfur (S) precursors at a substrate temperature of 420 °C. By independently controlling the source temperatures of Sb, Se, and S, Sb<sub>2</sub>(S<sub>x</sub>Se<sub>1-x</sub>)<sub>3</sub> thin films with varying component ratios were obtained. Scanning electron microscopy revealed significant changes in the surface morphology of the films depending on the elemental ratio of [S]/([S]+[Se]). Crystallites shaped like cylindrical microrods with <em>d</em> = 0.5–2 µm diameter and <em>l</em> = 3–5 µm length were grown at a certain angle on the substrate. X-ray diffraction patterns showed peaks corresponding to the orthorhombic structures of Sb<sub>2</sub>Se<sub>3</sub>, Sb<sub>2</sub>S<sub>3</sub> and their ternary compounds Sb<sub>2</sub>(S<sub>x</sub>Se<sub>1-x</sub>)<sub>3</sub>. The optical characterization revealed a high absorption coefficient of 10<sup>5</sup> cm<sup>−1</sup> in the visible and near-infrared light regions. The band gap of the compounds changed almost linearly from 1.2 eV to 1.36 eV with a change in the ratio of elements [S]/([S]+[Se]) from 0.03 to 0.08.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"807 ","pages":"Article 140554"},"PeriodicalIF":2.0,"publicationDate":"2024-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142530767","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Preface to a Special Issue E-MRS 2023 Fall Meeting, Symposium A, Integration of advanced materials on silicon, from classical to neuromorphic and quantum applications 特刊序言 E-MRS 2023 秋季会议，专题讨论会 A，硅上先进材料的集成，从经典到神经形态和量子应用

IF 2 4区材料科学 Q3 MATERIALS SCIENCE, COATINGS & FILMS

Thin Solid Films

Pub Date : 2024-10-30 DOI: 10.1016/j.tsf.2024.140539

Abderraouf Boucherif , Andriy Hikavyy , Jacopo Frigerio , Katarzyna Hnida-Gut

引用次数: 0

Effects and modulation mechanism of crystal structure on residual stress of Cu films used for metallization 晶体结构对金属化用铜膜残余应力的影响和调节机制

IF 2 4区材料科学 Q3 MATERIALS SCIENCE, COATINGS & FILMS

Thin Solid Films

Pub Date : 2024-10-30 DOI: 10.1016/j.tsf.2024.140556

Wenju Li , Shu Xiao , Xiaobo Zhang , Xinyu Meng , Yixiong Gao , Shuyu Fan , Tijun Li , Paul K. Chu

Deformation cracking and delamination arising from residual stress are the main challenges for metallization in large-scale integrated circuits. Herein, an ultra-low residual stress Cu film is prepared on amorphous SiO₂ by mixed power magnetron sputtering. Compared to conventional Cu films, the residual stress in the film decreases by 1434 times. The nano multi-layer structure produces lower stress and deformation as well as better reliability. The multi-layer Ti underlayer also reduces the residual stress and promotes the low-defect growth of Cu. The lower surface roughness, smaller dislocation density, predominant grain orientations of 〈111〉 and 〈001〉, and more substructures are beneficial to the reduction of residual stress. In addition, interlayer stress cancellation can be achieved by changing the number of 〈111〉 grains. The research on grain growth at the interface of nano multi-layer films reveals an effective means to fabricate films with low residual stress for metallization in integrated circuits.

残余应力引起的变形开裂和分层是大规模集成电路金属化的主要挑战。本文采用混合功率磁控溅射技术在非晶二氧化硅上制备了超低残余应力铜膜。与传统铜膜相比，薄膜中的残余应力降低了 1434 倍。纳米多层结构产生的应力和变形更小，可靠性更高。多层钛底层也降低了残余应力，促进了铜的低缺陷生长。较低的表面粗糙度、较小的位错密度、以〈111〉和〈001〉为主的晶粒取向以及更多的子结构都有利于减少残余应力。此外，还可以通过改变〈111〉晶粒的数量来消除层间应力。对纳米多层薄膜界面晶粒生长的研究揭示了一种制造低残余应力薄膜的有效方法，可用于集成电路的金属化。

{"title":"Effects and modulation mechanism of crystal structure on residual stress of Cu films used for metallization","authors":"Wenju Li , Shu Xiao , Xiaobo Zhang , Xinyu Meng , Yixiong Gao , Shuyu Fan , Tijun Li , Paul K. Chu","doi":"10.1016/j.tsf.2024.140556","DOIUrl":"10.1016/j.tsf.2024.140556","url":null,"abstract":"<div><div>Deformation cracking and delamination arising from residual stress are the main challenges for metallization in large-scale integrated circuits. Herein, an ultra-low residual stress Cu film is prepared on amorphous SiO<sub>2</sub> by mixed power magnetron sputtering. Compared to conventional Cu films, the residual stress in the film decreases by 1434 times. The nano multi-layer structure produces lower stress and deformation as well as better reliability. The multi-layer Ti underlayer also reduces the residual stress and promotes the low-defect growth of Cu. The lower surface roughness, smaller dislocation density, predominant grain orientations of 〈111〉 and 〈001〉, and more substructures are beneficial to the reduction of residual stress. In addition, interlayer stress cancellation can be achieved by changing the number of 〈111〉 grains. The research on grain growth at the interface of nano multi-layer films reveals an effective means to fabricate films with low residual stress for metallization in integrated circuits.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"807 ","pages":"Article 140556"},"PeriodicalIF":2.0,"publicationDate":"2024-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142530672","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Fabrication and characterization of zinc oxide nanorods-modified electrodes using nanoimprint lithography for electrochemical sensing of heavy metal ions 利用纳米压印光刻技术制作和表征用于重金属离子电化学传感的氧化锌纳米棒修饰电极

IF 2 4区材料科学 Q3 MATERIALS SCIENCE, COATINGS & FILMS

Thin Solid Films

Pub Date : 2024-10-30 DOI: 10.1016/j.tsf.2024.140550

Nongmaithem Herojit Singh , Rakesh Singh Moirangthem , Shagolsem Romeo Meitei , N. Mohondas Singh

This paper uses the nanoimprint lithography (NIL) technique to present the fabrication and characterization of Zinc oxide nanorods (ZnONRs)-modified electrodes. Characterization of the resulting electrode involved X–ray diffraction, Field Emission Scanning Electron Microscope and Transmission electron microscopy. The electrode surface was modified with ZnONRs using the NIL technique to increase the sensitivity of the electrochemical sensor for detecting small quantities of heavy metal ions, which remain a major concern due to their toxicity and environmental harm. Electrochemical measurements and sensing performance evaluations were conducted to analyze the electrochemical properties and sensitivity of the ZnONRs - modified electrodes. The results demonstrated increased sensitivity towards cadmium ions present in aqueous solutions, and the limit of detection is found to be 20.88 ± 0.9 µM.

本文采用纳米压印光刻（NIL）技术，介绍了氧化锌纳米棒（ZnONRs）改性电极的制造和表征。对所制电极的表征包括 X 射线衍射、场发射扫描电子显微镜和透射电子显微镜。使用 NIL 技术对电极表面进行 ZnONRs 修饰，以提高电化学传感器检测少量重金属离子的灵敏度。为了分析改性 ZnONRs 电极的电化学特性和灵敏度，我们进行了电化学测量和传感性能评估。结果表明，电极对水溶液中镉离子的灵敏度有所提高，检测限为 20.88 ± 0.9 µM。

引用次数: 0

Effect of anchoring groups on the formation of self-assembled monolayers on Au(111) from cyclohexanethiol and cyclohexyl thiocyanate 锚定基团对环己硫醇和环己基硫氰酸盐在金(111)上形成自组装单层的影响

IF 2 4区材料科学 Q3 MATERIALS SCIENCE, COATINGS & FILMS

Thin Solid Films

Pub Date : 2024-10-28 DOI: 10.1016/j.tsf.2024.140560

Jun Hyeong Lee , Jin Wook Han , Gaeun Lee , Seulki Han , Haeri Kim , Dongjin Seo , Riko Kaizu , Glenn Villena Latag , Tomohiro Hayashi , Jaegeun Noh

Surface structures, binding conditions, and electrochemical behaviors of self-assembled monolayers (SAMs) formed by adsorption of cyclohexanethiol (CHT, C₆H₁₀-SH) and cyclohexyl thiocyanate (CHTC, C₆H₁₀-SCN) on Au(111) were characterized to understand the effect of anchoring groups on the formation of SAMs using scanning tunneling microscopy (STM), X-ray photoelectron spectroscopy (XPS), and cyclic voltammetry (CV). STM observations showed that CHT SAMs had tri-directional small-ordered domains, whereas CHTC SAMs were composed of unidirectional long-range-ordered domains and disordered domains. CHT and CHTC SAMs had identical molecular arrangements with zig-zag-ordered molecular rows, unlike the SAMs of alkanethiols and alkyl thiocyanates, which have different packing structures. XPS measurements showed that CHTC SAMs on Au(111) can be formed via chemical reactions of sulfur atoms after cleavage of S-CN bonds, and the surface coverages of CHT and CHTC SAMs were similar. Moreover, the N 1s peak intensity of CHTC SAMs is very weak, which means that the CN species generated during the adsorption of CHTC molecules on Au(111) are easily removed from the surface. CV measurements revealed the reductive desorption peaks of CHT and CHTC SAMs at similar potentials of −0.980 and −0.988 V, respectively, suggesting that the electrochemical stabilities of CHT and CHTC SAMs were almost identical to each other. Overall, we clearly demonstrated that, unlike alkyl thiocyanate SAMs, alicyclic thiocyanates could be used as an excellent alternative to thiol analogues with the same alicyclic backbone for SAM preparation.

利用扫描隧道显微镜（STM）、X射线光电子能谱（XPS）和循环伏安法（CV）表征了环己基硫醇（CHT，C6H10-SH）和环己基硫氰酸盐（CHTC，C6H10-SCN）在金（111）上吸附形成的自组装单层（SAMs）的表面结构、结合条件和电化学行为，以了解锚定基团对 SAMs 形成的影响。STM 观察结果表明，CHT SAM 具有三向小有序结构域，而 CHTC SAM 则由单向长程有序结构域和无序结构域组成。CHT 和 CHTC SAM 具有相同的分子排列，分子行呈之字形有序排列，与烷硫醇和硫氰酸烷基酯的 SAM 不同，它们具有不同的堆积结构。XPS 测量结果表明，Au(111) 上的四氯化碳 SAM 可通过硫原子裂解 S-CN 键后的化学反应形成，而且 CHT 和 CHTC SAM 的表面覆盖率相似。此外，四氯化碳 SAM 的 N 1s 峰强度非常弱，这说明四氯化碳分子在 Au（111）上吸附时产生的 CN 物种很容易从表面去除。CV 测量显示 CHT 和 CHTC SAM 的还原解吸峰电位相似，分别为 -0.980 V 和 -0.988 V，这表明 CHT 和 CHTC SAM 的电化学稳定性几乎相同。总之，我们清楚地证明，与硫氰酸烷基 SAM 不同，脂环族硫氰酸盐可以作为具有相同脂环族骨架的硫醇类似物的极佳替代品用于制备 SAM。

{"title":"Effect of anchoring groups on the formation of self-assembled monolayers on Au(111) from cyclohexanethiol and cyclohexyl thiocyanate","authors":"Jun Hyeong Lee , Jin Wook Han , Gaeun Lee , Seulki Han , Haeri Kim , Dongjin Seo , Riko Kaizu , Glenn Villena Latag , Tomohiro Hayashi , Jaegeun Noh","doi":"10.1016/j.tsf.2024.140560","DOIUrl":"10.1016/j.tsf.2024.140560","url":null,"abstract":"<div><div>Surface structures, binding conditions, and electrochemical behaviors of self-assembled monolayers (SAMs) formed by adsorption of cyclohexanethiol (CHT, C<sub>6</sub>H<sub>10</sub>-SH) and cyclohexyl thiocyanate (CHTC, C<sub>6</sub>H<sub>10</sub>-SCN) on Au(111) were characterized to understand the effect of anchoring groups on the formation of SAMs using scanning tunneling microscopy (STM), X-ray photoelectron spectroscopy (XPS), and cyclic voltammetry (CV). STM observations showed that CHT SAMs had tri-directional small-ordered domains, whereas CHTC SAMs were composed of unidirectional long-range-ordered domains and disordered domains. CHT and CHTC SAMs had identical molecular arrangements with zig-zag-ordered molecular rows, unlike the SAMs of alkanethiols and alkyl thiocyanates, which have different packing structures. XPS measurements showed that CHTC SAMs on Au(111) can be formed via chemical reactions of sulfur atoms after cleavage of S-CN bonds, and the surface coverages of CHT and CHTC SAMs were similar. Moreover, the N 1s peak intensity of CHTC SAMs is very weak, which means that the CN species generated during the adsorption of CHTC molecules on Au(111) are easily removed from the surface. CV measurements revealed the reductive desorption peaks of CHT and CHTC SAMs at similar potentials of −0.980 and −0.988 V, respectively, suggesting that the electrochemical stabilities of CHT and CHTC SAMs were almost identical to each other. Overall, we clearly demonstrated that, unlike alkyl thiocyanate SAMs, alicyclic thiocyanates could be used as an excellent alternative to thiol analogues with the same alicyclic backbone for SAM preparation.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"808 ","pages":"Article 140560"},"PeriodicalIF":2.0,"publicationDate":"2024-10-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142552509","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Plasma-enhanced atomic layer deposition of N-doped GaO thin film for bandgap modulation 用于带隙调制的 N 掺杂氧化镓薄膜的等离子体增强原子层沉积

IF 2 4区材料科学 Q3 MATERIALS SCIENCE, COATINGS & FILMS

Thin Solid Films

Pub Date : 2024-10-28 DOI: 10.1016/j.tsf.2024.140561

Longxing Su , Hongping Ma

Bandgap modulation is extremely important for optoelectronic and electronic devices. However, compare with Ⅱ-Ⅵ and Ⅲ-Ⅴ compound semiconductors, the ultrawide bandgap semiconductor Ga₂O₃ (Ⅲ-Ⅵ) faces a tough obstacle of bandgap modulation. Herein, we have prepared a N-doped GaO thin film on Si substrate through a plasma-enhanced atomic layer deposition (PEALD) method. The as-deposited GaO:N layer exhibits amorphous nature with thickness of ∼8.4 nm. The bandgap of the as-deposited GaO:N layer is adjusted to 4.31 eV, which is ∼0.49 eV smaller than the bandgap of pure Ga₂O₃. In addition, the photoluminescence (PL) spectra from five randomly selected points of the film layer indicate the uniformly distribution of N concentration. Subsequently, the energy band diagram of the as-deposited GaO:N layer is determined by the X-ray photoelectron spectroscopy (XPS), in which the Fermi energy level locates ∼0.81 eV below the conduction band minimum (CBM) and ∼3.5 eV above the valence band maximum (VBM). Our study raises a promising strategy for modulating the bandgap of Ga₂O₃, which provides potential applications in spectrum adjustable photodetector and high electron mobility transistor.

带隙调制对光电和电子设备极为重要。然而，与Ⅱ-Ⅵ和Ⅲ-Ⅴ化合物半导体相比，超宽带隙半导体 Ga2O3（Ⅲ-Ⅵ）在带隙调制方面面临着严峻的挑战。在此，我们采用等离子体增强原子层沉积（PEALD）方法在硅衬底上制备了掺杂 N 的 GaO 薄膜。沉积后的 GaO:N 层呈非晶态，厚度为 8.4 nm。所沉积的 GaO:N 层的带隙被调整为 4.31 eV，比纯 Ga2O3 的带隙小 0.49 eV。此外，从薄膜层上随机选取的五个点的光致发光（PL）光谱显示出 N 浓度的均匀分布。随后，通过 X 射线光电子能谱（XPS）测定了淀积的 GaO:N 层的能带图，其中费米能级位于导带最小值（CBM）下方 ∼0.81 eV 和价带最大值（VBM）上方 ∼3.5 eV。我们的研究为调控 Ga2O3 的带隙提出了一种有前途的策略，为光谱可调光电探测器和高电子迁移率晶体管提供了潜在的应用。

{"title":"Plasma-enhanced atomic layer deposition of N-doped GaO thin film for bandgap modulation","authors":"Longxing Su , Hongping Ma","doi":"10.1016/j.tsf.2024.140561","DOIUrl":"10.1016/j.tsf.2024.140561","url":null,"abstract":"<div><div>Bandgap modulation is extremely important for optoelectronic and electronic devices. However, compare with Ⅱ-Ⅵ and Ⅲ-Ⅴ compound semiconductors, the ultrawide bandgap semiconductor Ga<sub>2</sub>O<sub>3</sub> (Ⅲ-Ⅵ) faces a tough obstacle of bandgap modulation. Herein, we have prepared a N-doped GaO thin film on Si substrate through a plasma-enhanced atomic layer deposition (PEALD) method. The as-deposited GaO:N layer exhibits amorphous nature with thickness of ∼8.4 nm. The bandgap of the as-deposited GaO:N layer is adjusted to 4.31 eV, which is ∼0.49 eV smaller than the bandgap of pure Ga<sub>2</sub>O<sub>3</sub>. In addition, the photoluminescence (PL) spectra from five randomly selected points of the film layer indicate the uniformly distribution of N concentration. Subsequently, the energy band diagram of the as-deposited GaO:N layer is determined by the X-ray photoelectron spectroscopy (XPS), in which the Fermi energy level locates ∼0.81 eV below the conduction band minimum (CBM) and ∼3.5 eV above the valence band maximum (VBM). Our study raises a promising strategy for modulating the bandgap of Ga<sub>2</sub>O<sub>3</sub>, which provides potential applications in spectrum adjustable photodetector and high electron mobility transistor.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"808 ","pages":"Article 140561"},"PeriodicalIF":2.0,"publicationDate":"2024-10-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142552508","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Structural and electrical characterization of phase evolution in epitaxial Gd2O3 due to anneal temperature for silicon on insulator application 用于绝缘体硅的外延 Gd2O3 因退火温度而发生相变的结构和电气特性分析

IF 2 4区材料科学 Q3 MATERIALS SCIENCE, COATINGS & FILMS

Thin Solid Films

Pub Date : 2024-10-23 DOI: 10.1016/j.tsf.2024.140559

Nishant Saurabh , Shubham Patil , Paritosh Meihar , Sandeep Kumar , Anand Sharma , BhaveshKumar Kamaliya , Rakesh G. Mote , Sandip Lashkare , Apurba Laha , Veeresh Deshpande , Udayan Ganguly

In this work, we understand the post-deposition anneal temperature effects on structural and electrical (leakage current and trap density) properties of epitaxial Gd₂O₃ film grown on Si (111) substrate using a cost-effective and High-Volume Manufacturing capable radio frequency sputtering method. It is found that the Rapid Thermal Annealing (RTA) at an optimum temperature of 850 °C enhances the crystallinity of the cubic phase in film. However, at higher RTA temperatures (>900 °C to 1050 °C), Si out-diffusion in Gd₂O₃ film is manifested as the reason for phase evolution towards the amorphous phase. The electrical characterization shows the film's low leakage current density of 100 nA/cm². Moreover, increased breakdown voltage and field are observed with increasing RTA temperature. The frequency-dependent Capacitance-Voltage analysis shows a parallel shift accompanied by a kink at a lower frequency, indicating the presence of interface traps (D_it) with a range of time constants. After the forming gas annealing, a significant reduction in D_it is observed. The low leakage current density, low D_it and high crystallinity make Gd₂O₃ a promising candidate as a buried oxide in Silicon on Insulator MOSFETs.

在这项工作中，我们了解了沉积后退火温度对使用具有成本效益和大批量制造能力的射频溅射方法在硅（111）基底上生长的外延 Gd2O3 薄膜的结构和电气（漏电流和陷阱密度）特性的影响。研究发现，在 850 °C 的最佳温度下进行快速热退火（RTA）可提高薄膜中立方相的结晶度。然而，在较高的 RTA 温度（900 ℃ 至 1050 ℃）下，Gd2O3 薄膜中的硅向外扩散，成为向无定形相演化的原因。电学特性分析表明，薄膜的漏电流密度很低，仅为 100 nA/cm2。此外，随着 RTA 温度的升高，还观察到击穿电压和击穿场强的增加。与频率相关的电容-电压分析表明，在较低频率下会出现平行移动和扭结，这表明存在时间常数范围内的界面陷阱（Dit）。在成型气体退火后，观察到 Dit 显著减少。低漏电流密度、低 Dit 和高结晶度使 Gd2O3 有希望成为绝缘体硅 MOSFET 的埋藏氧化物。

{"title":"Structural and electrical characterization of phase evolution in epitaxial Gd2O3 due to anneal temperature for silicon on insulator application","authors":"Nishant Saurabh , Shubham Patil , Paritosh Meihar , Sandeep Kumar , Anand Sharma , BhaveshKumar Kamaliya , Rakesh G. Mote , Sandip Lashkare , Apurba Laha , Veeresh Deshpande , Udayan Ganguly","doi":"10.1016/j.tsf.2024.140559","DOIUrl":"10.1016/j.tsf.2024.140559","url":null,"abstract":"<div><div>In this work, we understand the post-deposition anneal temperature effects on structural and electrical (leakage current and trap density) properties of epitaxial Gd<sub>2</sub>O<sub>3</sub> film grown on Si (111) substrate using a cost-effective and High-Volume Manufacturing capable radio frequency sputtering method. It is found that the Rapid Thermal Annealing (RTA) at an optimum temperature of 850 °C enhances the crystallinity of the cubic phase in film. However, at higher RTA temperatures (>900 °C to 1050 °C), Si out-diffusion in Gd<sub>2</sub>O<sub>3</sub> film is manifested as the reason for phase evolution towards the amorphous phase. The electrical characterization shows the film's low leakage current density of 100 nA/cm<sup>2</sup>. Moreover, increased breakdown voltage and field are observed with increasing RTA temperature. The frequency-dependent Capacitance-Voltage analysis shows a parallel shift accompanied by a kink at a lower frequency, indicating the presence of interface traps (D<sub>it</sub>) with a range of time constants. After the forming gas annealing, a significant reduction in D<sub>it</sub> is observed. The low leakage current density, low D<sub>it</sub> and high crystallinity make Gd<sub>2</sub>O<sub>3</sub> a promising candidate as a buried oxide in Silicon on Insulator MOSFETs.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"808 ","pages":"Article 140559"},"PeriodicalIF":2.0,"publicationDate":"2024-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142552510","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Defect induced persistence photoconductivity in spray pyrolyzed ZnO thin films: Impact of Sm3+doping 喷雾热解氧化锌薄膜中缺陷诱导的持久光电导性：Sm3+ 掺杂的影响

IF 2 4区材料科学 Q3 MATERIALS SCIENCE, COATINGS & FILMS

Thin Solid Films

Pub Date : 2024-10-21 DOI: 10.1016/j.tsf.2024.140555

Manu Srivathsa, BV Rajendra

The persistent photoconductivity of the rare earth ion doped ZnO is an emerging field. The present work focuses on the effect of samarium (Sm³⁺) ion doping on the persistence photo response behaviour ZnO host matrix. The Zn_1-xSm_xO (x = 0.0 to 0.10) thin films were deposited on chemically cleaned glass substrates using spray pyrolysis technique. The films showed polycrystalline nature and hexagonal wurtzite structure without any impurity peaks. The Zn_0.93Sm_0.07O films showed maximum crystallite size of 24.2 nm and minimum dislocation density. The gradual change in the thickness of the fibrous nature was observed with the addition of Sm³⁺ ions into ZnO lattice. Energy dispersive analysis of x-ray and X-ray photoelectron spectroscopy confirmed the presence of elements and its oxidation states in the deposited film respectively. The area under the curve of deconvoluted photoluminescence spectra of deposits confirmed the decrease in the various defect percentage with increase in the doping concentration of Sm³⁺ ions. The photoluminescence spectra of Zn_0.93Sm_0.07O films showed maximum near band edge emission and minimum defects. The Zn_0.93Sm_0.07O films showed higher carrier concentration of 1 × 10¹⁷ cm⁻³, mobility 32 cm²/Vs and lower resistivity of 1 × 10² Ω cm due to improved film quality. The Zn_0.93Sm_0.07O films exhibited the current value under dark and ultraviolet light illumination was in the range of 10⁻⁶ A and 10⁻⁴ A respectively. The maximum photocurrent was noticed at 375 nm which corresponds to the bandgap of the deposited films. The Zn_0.93Sm_0.07O films showed faster photo response (5 s and 131 s of response and recovery time) due to the presence of minimum trap states. Hence the Zn_0.93Sm_0.07O films can be used in the fabrication of light dependent resistors and ultraviolet sensors.

稀土离子掺杂氧化锌的持久光电导性是一个新兴领域。本研究的重点是掺杂钐（Sm3+）离子对 ZnO 主基质持久光响应行为的影响。采用喷雾热解技术在化学清洗过的玻璃基底上沉积了 Zn1-xSmxO (x = 0.0 至 0.10) 薄膜。薄膜显示出多晶性质和六方菱面体结构，没有任何杂质峰。Zn0.93Sm0.07O 薄膜的最大晶粒尺寸为 24.2 nm，位错密度最小。在 ZnO 晶格中加入 Sm3+ 离子后，观察到纤维状的厚度逐渐发生变化。X 射线能量色散分析和 X 射线光电子能谱分别证实了沉积薄膜中元素的存在及其氧化态。沉积物的去卷积光致发光光谱曲线下的面积证实，随着 Sm3+ 离子掺杂浓度的增加，各种缺陷的百分比都在下降。Zn0.93Sm0.07O 薄膜的光致发光光谱显示出最大的近带边缘发射和最小的缺陷。由于薄膜质量的提高，Zn0.93Sm0.07O 薄膜显示出更高的载流子浓度（1 × 1017 cm-3）、迁移率（32 cm2/Vs）和更低的电阻率（1 × 102 Ω cm）。Zn0.93Sm0.07O 薄膜在暗光和紫外线照射下的电流值分别为 10-6 A 和 10-4 A。最大光电流出现在 375 纳米波长处，与沉积薄膜的带隙相对应。由于存在最小陷阱态，Zn0.93Sm0.07O 薄膜的光响应速度更快（响应和恢复时间分别为 5 秒和 131 秒）。因此，Zn0.93Sm0.07O 薄膜可用于制造光敏电阻和紫外线传感器。

{"title":"Defect induced persistence photoconductivity in spray pyrolyzed ZnO thin films: Impact of Sm3+doping","authors":"Manu Srivathsa, BV Rajendra","doi":"10.1016/j.tsf.2024.140555","DOIUrl":"10.1016/j.tsf.2024.140555","url":null,"abstract":"<div><div>The persistent photoconductivity of the rare earth ion doped ZnO is an emerging field. The present work focuses on the effect of samarium (Sm<sup>3+</sup>) ion doping on the persistence photo response behaviour ZnO host matrix. The Zn<sub>1-x</sub>Sm<sub>x</sub>O (<em>x</em> = 0.0 to 0.10) thin films were deposited on chemically cleaned glass substrates using spray pyrolysis technique. The films showed polycrystalline nature and hexagonal wurtzite structure without any impurity peaks. The Zn<sub>0.93</sub>Sm<sub>0.07</sub>O films showed maximum crystallite size of 24.2 nm and minimum dislocation density. The gradual change in the thickness of the fibrous nature was observed with the addition of Sm<sup>3+</sup> ions into ZnO lattice. Energy dispersive analysis of x-ray and X-ray photoelectron spectroscopy confirmed the presence of elements and its oxidation states in the deposited film respectively. The area under the curve of deconvoluted photoluminescence spectra of deposits confirmed the decrease in the various defect percentage with increase in the doping concentration of Sm<sup>3+</sup> ions. The photoluminescence spectra of Zn<sub>0.93</sub>Sm<sub>0.07</sub>O films showed maximum near band edge emission and minimum defects. The Zn<sub>0.93</sub>Sm<sub>0.07</sub>O films showed higher carrier concentration of 1 × 10<sup>17</sup> cm<sup>−3</sup>, mobility 32 cm<sup>2</sup>/Vs and lower resistivity of 1 × 10<sup>2</sup> Ω cm due to improved film quality. The Zn<sub>0.93</sub>Sm<sub>0.07</sub>O films exhibited the current value under dark and ultraviolet light illumination was in the range of 10<sup>−6</sup> A and 10<sup>−4</sup> A respectively. The maximum photocurrent was noticed at 375 nm which corresponds to the bandgap of the deposited films. The Zn<sub>0.93</sub>Sm<sub>0.07</sub>O films showed faster photo response (5 s and 131 s of response and recovery time) due to the presence of minimum trap states. Hence the Zn<sub>0.93</sub>Sm<sub>0.07</sub>O films can be used in the fabrication of light dependent resistors and ultraviolet sensors.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"808 ","pages":"Article 140555"},"PeriodicalIF":2.0,"publicationDate":"2024-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142573555","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0