Thin Solid Films最新文献_第4页

Emulating synaptic plasticity dynamics of ZnO/PVA:rGO bilayer memristive devices ZnO/PVA:rGO双层记忆器件突触可塑性动力学模拟

IF 2 4区材料科学 Q3 MATERIALS SCIENCE, COATINGS & FILMS

Thin Solid Films

Pub Date : 2025-12-17 DOI: 10.1016/j.tsf.2025.140842

Nikhilamol Simon , Harsh Ranjan , Manoj Mohan , Saurabh Kumar Pandey

Memristors, as non-volatile resistive switching elements, have emerged as promising candidates for neuromorphic computing owing to their ability to replicate synaptic plasticity. In this article, we have investigated the synaptic behaviour of ZnO/PVA:rGO bilayer devices, where the Polyvinyl Alcohol (PVA) incorporates with reduced graphene oxide (rGO) at 1, 2, and 3 wt%. The electrodes consist of silver (Ag) on the top and indium tin oxide (ITO) at the bottom. Graphene oxide (GO) was synthesized using a modified Hummers method and subsequently reduced to rGO via ascorbic acid. The Zinc Oxide (ZnO) layer was deposited using electron-beam evaporation, while the PVA:rGO layer was fabricated by spin coating. The fabricated ZnO/PVA:rGO/Ag/ITO devices demonstrate forming-free bipolar resistive switching with a compliance current of 10 mA, exhibiting clear potentiation and depression under successive triangular DC sweeps (0 V → 0.7 V → 0 V → -0.7 V → 0 V). The 1 wt% rGO device, in particular, shows stable and reproducible conductance modulation over multiple consecutive cycles, confirming synaptic plasticity and strong potential for neuromorphic computing. In contrast, higher rGO loadings (2 and 3 wt%) resulted in diminished synaptic responses, indicating that excessive rGO content can impair performance. These findings highlight the critical role of rGO concentration in achieving stable and controllable switching, making the device architecture well-suited for artificial synapse and neuromorphic computing applications.

忆阻器作为一种非易失性的电阻开关元件，由于其复制突触可塑性的能力，已成为神经形态计算的有希望的候选者。在本文中，我们研究了ZnO/PVA:rGO双层器件的突触行为，其中聚乙烯醇（PVA）与还原氧化石墨烯（rGO）在1、2和3 wt%下结合。电极由顶部的银（Ag）和底部的氧化铟锡（ITO）组成。采用改进的Hummers方法合成氧化石墨烯，随后通过抗坏血酸还原为氧化石墨烯。采用电子束蒸发法制备氧化锌（ZnO）层，采用自旋镀膜法制备PVA:rGO层。制备的ZnO/PVA:rGO/Ag/ITO器件具有无形成的双极电阻开关，符合电流为10 mA，在连续的三角形直流扫描（0 V→0.7 V→0 V→-0.7 V→0 V）下表现出明显的增强和抑制。特别是1wt % rGO装置，在多个连续周期中表现出稳定和可重复的电导调制，证实了突触可塑性和神经形态计算的强大潜力。相反，较高的氧化石墨烯负荷（2 wt%和3 wt%）导致突触反应减弱，表明过量的氧化石墨烯含量会损害性能。这些发现强调了氧化石墨烯浓度在实现稳定可控开关中的关键作用，使器件架构非常适合人工突触和神经形态计算应用。

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引用次数: 0

Scalable fabrication of lead-free halide perovskite film from electrodeposited SnO precursor film 电沉积SnO前驱体膜制备无铅卤化物钙钛矿膜的研究

IF 2 4区材料科学 Q3 MATERIALS SCIENCE, COATINGS & FILMS

Thin Solid Films

Pub Date : 2025-12-11 DOI: 10.1016/j.tsf.2025.140841

Kimiya Kiyanpour , Sahel Gozalzadeh , Leila Jafari Foruzin , Farzad Nasirpouri

The present study describes a two-step synthesis of methylammonium tin bromide (CH₃NH₃SnBr₃) perovskite film. The process is based on (i) the electrodeposition of Sn precursor (SnO) onto TiO₂ nanotubes, followed by ii) direct chemical conversion of SnO to the perovskite. Several anodization methods, including one-step anodization, one-step anodization with ultrasonic post-treatment (UPT), and two-step anodization, were investigated for preparing the TiO₂ nanotubes on a Titanium (Ti) substrate. Among these methods, the one-step anodization with UPT yielded open-top, ordered TiO₂ nanotubes with an internal diameter of 69.15 nm, making them a promising photoanode. The impact of different electrodeposition techniques, including two and three electrode cells, on the structural, morphological, and compositional properties of electrodeposited Sn-based layers was also examined. Chronoamperometry in the 3-electrode set-up produced a single-phase SnO film exclusively at the nanotube openings. The final tin-based perovskite film, formed via chemical conversion of the SnO layer, exhibits a compact structure with a band gap of 2.0 eV, which is comparable to values reported for tin-based perovskites prepared by conventional methods.

本研究描述了两步法合成甲基溴化锡（CH3NH3SnBr3）钙钛矿薄膜。该工艺是基于(i)将Sn前驱体（SnO）电沉积到TiO2纳米管上，然后（ii）将SnO直接化学转化为钙钛矿。研究了一步阳极氧化、超声后处理一步阳极氧化和两步阳极氧化在钛（Ti）衬底上制备TiO2纳米管的方法。其中，UPT一步阳极氧化制得的开顶有序TiO2纳米管内径为69.15 nm，是一种很有前途的光阳极。研究了不同的电沉积技术，包括两个和三个电极电池，对电沉积锡基层的结构、形态和组成特性的影响。在三电极装置中，计时电流法只在纳米管开口处产生单相SnO膜。最终的锡基钙钛矿薄膜是通过SnO层的化学转化形成的，其结构紧凑，带隙为2.0 eV，与传统方法制备的锡基钙钛矿的值相当。

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引用次数: 0

Compositional effects on the structural, mechanical, and electrical properties of Cr–Nb–N thin films 成分对Cr-Nb-N薄膜结构、力学和电学性能的影响

IF 2 4区材料科学 Q3 MATERIALS SCIENCE, COATINGS & FILMS

Thin Solid Films

Pub Date : 2025-12-10 DOI: 10.1016/j.tsf.2025.140840

A. Farhadizadeh , Y. Wei , M. Odén

This study reports the structural, morphological, mechanical, and electrical properties of Cr-Nb-N films deposited on MgO (001) and c-plane sapphire substrates by dc magnetron sputtering. The films were characterized by X-ray diffraction, scanning electron microscopy, nanoindentation, and electrical resistivity measurements. High-quality epitaxial Cr and CrN films were obtained, and the effects of Nb and N incorporation were systematically analyzed. Cr films on MgO remained epitaxial with increased hardness and electric resistivity when the Nb content was increased to 12%, while a high Nb content (40 at%) resulted in a nanocrystalline film. Adding nitrogen to such nanocrystalline Cr–Nb alloys yielded a phase mixture of metallic and ternary nitrides, which enhanced the hardness up to 26 GPa and resulted in a large variation in the electrical behavior. Additions of Nb into epitaxial CrN resulted in a linear lattice expansion while decreasing the electrical resistivity of CrN by two orders of magnitude. These findings demonstrate that precise control of Nb and nitrogen enables tunable structural, mechanical, and electrical properties in Cr-Nb-N films.

本文报道了用直流磁控溅射技术在MgO（001）和c平面蓝宝石衬底上沉积Cr-Nb-N薄膜的结构、形态、力学和电学性能。通过x射线衍射、扫描电子显微镜、纳米压痕和电阻率测量对薄膜进行了表征。获得了高质量的Cr和CrN外延膜，并系统分析了Nb和N掺入对外延膜的影响。当铌含量增加到12%时，MgO表面的Cr膜仍呈外延状，硬度和电阻率均有所提高，而当铌含量达到40%时，MgO表面形成纳米晶膜。在纳米晶Cr-Nb合金中加入氮气，形成了金属氮化物和三元氮化物的混合相，使合金硬度提高到26gpa，电学性能也发生了很大的变化。在外延CrN中加入Nb后，CrN的电阻率降低了两个数量级，晶格呈线性膨胀。这些发现表明，精确控制Nb和氮可以使Cr-Nb-N薄膜的结构、机械和电学性能可调。

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引用次数: 0

DC bias enhanced heteroepitaxial nucleation of (100) diamond on Ir(100)/a−sapphire by 915 MHz microwave plasma chemical vapor deposition 用915 MHz微波等离子体化学气相沉积技术增强了Ir(100)/a -蓝宝石表面（100）金刚石的异质外延成核

IF 2 4区材料科学 Q3 MATERIALS SCIENCE, COATINGS & FILMS

Thin Solid Films

Pub Date : 2025-12-09 DOI: 10.1016/j.tsf.2025.140839

Yonhua Tzeng , Jian-Wei Tsai , I-Lun Chiu , Chia-Che Ho

The desire for large−area heteroepitaxial nucleation of diamond has led to the exploration of larger plasma size than what is generated by 2.45 GHz microwave. We have demonstrated that 915 MHz microwave plasma nucleated (100) diamond on Ir (100)/a−sapphire by DC bias enhanced nucleation (BEN). BEN was carried out at −250 V to −290 V for 15–45 min by 3000 W microwave plasma chemical vapor deposition (MPCVD) in 10 % CH₄ diluted by hydrogen at the substrate temperature around 850 °C at the gas pressure of 4 kPa. Scanning electron microscopy (SEM) and 532 nm Raman spectroscopy were used to analyze the diamond nuclei. The result shows that biasing at −270 V for 30 min is optimal. X−ray diffraction (XRD) θ–2θ scans display only the diamond (400) reflection; rocking−curve and {111} pole−figure measurements confirm little mosaic spread and the absence of twins. Raman spectra data indicate moderate compressive stress and sp² carbon presumably from residual non−diamond carbon phases presiding on the iridium surface and between the heteroepitaxial diamond nuclei. These results establish the feasibility of DC bias enhanced heteroepitaxial nucleation of diamond by 915 MHz microwave plasma chemical vapor deposition (MPCVD) as a scalable route to the synthesis of single crystalline diamond wafers larger than the state−of−the−art.

对金刚石大面积异质外延成核的渴望导致了对比2.45 GHz微波产生的更大等离子体尺寸的探索。我们证明了915 MHz微波等离子体在Ir (100)/a -蓝宝石上通过直流偏压增强成核（BEN）使（100）金刚石成核。采用3000 W微波等离子体化学气相沉积（MPCVD）技术，在- 250 V ~ - 290 V条件下，在10% CH4（氢气稀释）中，在850℃左右的衬底温度下，在4 kPa的气压下，在- 250 V ~ - 290 V条件下，15-45 min。利用扫描电镜（SEM）和532 nm拉曼光谱对金刚石核进行了分析。结果表明，在−270 V下偏置30 min是最优的。X射线衍射(XRD) θ-2θ扫描仅显示金刚石（400）反射；摇摆曲线和{111}极形测量证实了很少的马赛克扩散和没有孪生。拉曼光谱数据表明，铱表面和异质外延金刚石核之间的残余非金刚石碳相存在适度的压应力和sp²碳。这些结果证实了利用915 MHz微波等离子体化学气相沉积（MPCVD）的直流偏置增强金刚石异质外延成核的可行性，作为一种可扩展的方法来合成比目前技术水平更大的单晶金刚石晶圆。

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引用次数: 0

Peculiar orientation relationships of metallic AsSb nanoparticles embedded in low temperature molecular beam epitaxy grown GaAsSb 低温分子束外延生长GaAsSb中金属AsSb纳米颗粒的特殊取向关系

IF 2 4区材料科学 Q3 MATERIALS SCIENCE, COATINGS & FILMS

Thin Solid Films

Pub Date : 2025-12-06 DOI: 10.1016/j.tsf.2025.140838

L.A. Snigirev , A.V. Myasoedov , N.A. Bert , V.V. Preobrazhenskii , M.A. Putyato , B.R. Semyagin , V.V. Chaldyshev

GaAs_0.97Sb_0.03 and Al_0.3Ga_0.7As_0.97Sb_0.03 epitaxial layers were grown on GaAs (001) substrates by molecular beam epitaxy at temperatures as low as 150 °C or 200 °C. The grown samples were then subjected to thermal treatment within a temperature range of 400–600 °C. The microstructure evolution of the samples upon annealing was examined using transmission electron microscopy. The results indicated that the second phase AsSb nanoparticles formed within the epitaxial layers as a result of thermal treatment have rhombohedral lattice of

R \bar{3} m

space group inherent in bulk As and Sb. However, the fine AsSb particles, measuring less than approximately 10 nm, were discovered to adopt an abnormal, symmetry-incompatible orientation in respect to the zinc-blende GaAs_0.97Sb_0.03 semiconductor matrix. Furthermore, an increase in the particle size over 10 nm was found to be accompanied by reorientation of the particles towards the ordinary, symmetry-compatible orientation relationships. This reorientation is believed to be driven by minimization of the particle-matrix lattice mismatch stress and to occur through atom migration.

采用分子束外延技术，在低至150℃或200℃的温度下，在GaAs（001）衬底上生长出GaAs0.97Sb0.03和Al0.3Ga0.7As0.97Sb0.03外延层。然后在400-600°C的温度范围内对生长的样品进行热处理。用透射电镜观察了样品退火后的微观组织演变。结果表明，热处理后在外延层内形成的第二相AsSb纳米颗粒具有块体as和Sb固有的R3¯m空间群的菱形晶格。然而，尺寸小于约10 nm的细小AsSb粒子在锌-闪锌矿GaAs0.97Sb0.03半导体基体中呈现出异常的、对称不相容的取向。此外，当粒径超过10 nm时，颗粒会向普通的对称相容取向关系重新取向。这种重定向被认为是由粒子-基质晶格错配应力的最小化驱动的，并通过原子迁移发生。

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引用次数: 0

Polymorphism and defect structure of CdTe thin films grown on different substrates by thermal sputtering 热溅射生长在不同衬底上的碲化镉薄膜的多态性和缺陷结构

IF 2 4区材料科学 Q3 MATERIALS SCIENCE, COATINGS & FILMS

Thin Solid Films

Pub Date : 2025-12-05 DOI: 10.1016/j.tsf.2025.140835

I.S. Volchkov , I.O. Koshelev , D.R. Khairetdinova , P.V. Reznikova , D.N. Khmelenin , A.V. Butashin , V.M. Kanevsky

The paper presents data on the structural features, including defects features, of thin CdTe films grown by high-vacuum thermal sputtering on Al₂O₃ (0001), Si (111) substrates, fluorine tin oxide and indium tin oxide layers on silicate glasses, and amorphous silicate glass under different temperature conditions. The results demonstrate that the kinetic features of sputtering processes lead excess Cd formation with increasing substrate temperature what could be related to an increase of desorption rates of Cd and Te atoms. This leads to a violation of stoichiometry and the formation of Te precipitates covered with a TeO₂ layer due to the presence of free Te regions, which has been demonstrated using X-ray diffraction, atomic force microscopy, energy-dispersive X-ray spectroscopy, transmission electron microscopy, diffraction of electrons and Raman spectroscopy. It is shown for the first time that increasing the substrate temperature to 500 °C leads not only to a decrease in the film growth rate due to an increase in the desorption rates of the sputtered atoms, but also to the formation of a highly oriented thin CdTe film with a sphalerite structure on an amorphous substrate.

本文介绍了不同温度条件下，在Al2O3（0001）、Si（111）衬底、氟氧化锡和铟氧化锡硅酸玻璃和非晶硅酸玻璃上采用高真空热溅射生长CdTe薄膜的结构特征，包括缺陷特征。结果表明，随着衬底温度的升高，溅射过程的动力学特征导致Cd的过量生成，这可能与Cd和Te原子的解吸速率的增加有关。由于自由Te区域的存在，这导致了化学计量学的违反和TeO2层覆盖的Te沉淀的形成，这已经用x射线衍射、原子力显微镜、能量色散x射线光谱、透射电子显微镜、电子衍射和拉曼光谱证明了。首次表明，将衬底温度提高到500℃，不仅由于溅射原子的解吸速率增加而导致薄膜生长速率降低，而且在非晶衬底上形成具有闪锌矿结构的高取向CdTe薄膜。

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引用次数: 0

Tailoring the composition and deposition kinetics of RF-sputtered BaTiO3 thin films through working pressure and target-substrate distance adjustments 通过工作压力和靶基距离的调整来调整rf溅射BaTiO3薄膜的组成和沉积动力学

IF 2 4区材料科学 Q3 MATERIALS SCIENCE, COATINGS & FILMS

Thin Solid Films

Pub Date : 2025-12-04 DOI: 10.1016/j.tsf.2025.140836

Edgar Chaslin, Jade Clément, Quentin Simon, Alejandro Borroto, Mohamed Himdi, Xavier Castel

Optimizing the growth of BaTiO₃ thin films is essential for operating their ferroelectric and dielectric properties for embedded microelectronic applications. The present study investigates in a combinatorial-like approach the deposition of BaTiO₃ thin films by radiofrequency magnetron sputtering on SiO₂/Si substrates under various working pressures (1 to 6 Pa) and target-substrate distances (7.5 to 9.2 cm). X-ray diffraction (XRD), Atomic Force Microscopy (AFM) and Rutherford Backscattering Spectroscopy (RBS) characterizations were used to establish the relationships between the sputtering deposition parameters and the resulting deposition rates, crystalline quality, surface roughness, and stoichiometry of the BaTiO₃ thin films. Low pressures and short distances lead to high kinetic growth of amorphous Ba-deficient films. Increasing working pressure

\times

target-substrate distance values above 0.30 Pa.m enables to attain the stoichiometric Ba/Ti ratio. This result is related to both Ba and Ti species thermalization into the plasma leading to improve the chemical composition of the films. Furthermore, crystalline quality of the BaTiO₃ films is improved by reducing the deposition rate through working pressure and target-substrate distance adjustment. These results can provide valuable roadmaps to set BaTiO₃ sputtering parameters for high-quality thin films deposition based on the stoichiometry balance and deposition kinetics, that can be further extended to other perovskite compounds.

优化BaTiO3薄膜的生长对其铁电性能和介电性能在嵌入式微电子应用中的应用至关重要。本研究在不同的工作压力（1 ~ 6 Pa）和靶基距离（7.5 ~ 9.2 cm）下，采用射频磁控溅射方法在SiO2/Si衬底上沉积了BaTiO3薄膜。通过x射线衍射（XRD）、原子力显微镜（AFM）和卢瑟福后向散射光谱（RBS）表征，建立了溅射沉积参数与BaTiO3薄膜的沉积速率、结晶质量、表面粗糙度和化学计量学之间的关系。低压和短距离导致非晶缺钡薄膜的高动力学生长。增加工作压力×目标-衬底距离值大于0.30 Pa。m可以得到Ba/Ti的化学计量比。这一结果与Ba和Ti在等离子体中热化导致薄膜化学成分的改善有关。此外，通过调节工作压力和靶基距离来降低沉积速率，提高了BaTiO3薄膜的结晶质量。这些结果可以为基于化学计量平衡和沉积动力学设定高质量薄膜沉积的BaTiO3溅射参数提供有价值的路线图，并可以进一步扩展到其他钙钛矿化合物。

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引用次数: 0

Thermoplasmonic enhanced detection efficiency by gold nanoparticles/ chlorophyll heterojunction on silicon nanowires 热等离子体在硅纳米线上利用金纳米粒子/叶绿素异质结提高检测效率

IF 2 4区材料科学 Q3 MATERIALS SCIENCE, COATINGS & FILMS

Thin Solid Films

Pub Date : 2025-12-04 DOI: 10.1016/j.tsf.2025.140837

S. Valimohammadi , S.M. Hamidi , L. Rajaee

This study presents the development of a ternary heterojunction nanostructure for visible-light detection at 532 nm. Silicon nanowires (SiNWs) were grown using the metal-assisted chemical etching (MACE) method. The structure incorporates gold nanoparticles (Au NPs), synthesized via laser ablation (a fixed amount of S₀: 1500 µL), which were combined with varying concentrations of chlorophyll-a (Chl-a) (S₁: 1000 µL, S₂: 1500 µL, S₃: 2000 µL). Characterization techniques included SEM and AFM to confirm SiNWs morphology, UV–Vis spectroscopy to examine the optical properties of the Au/Chl-a combination, and current-voltage (I-V) measurements to evaluate the enhanced photodetector performance. Key findings demonstrated that plasmon-exciton dipole interactions effectively increase electron-hole pair separation via the formation of plexcitons. Furthermore, thermoplasmonic heating raised the temperature of the optimal sample (SiNWs@S₂) to 51.6 °C (compared to the baseline SiNWs@S₀ temperature of 40.7 °C), representing a 26.78 % improvement. This system shows promising potential for high-performance optical sensing applications.

本研究提出了一种用于532 nm可见光检测的三元异质结纳米结构。采用金属辅助化学蚀刻（MACE）法制备了硅纳米线。该结构包含通过激光烧蚀合成的金纳米粒子（Au NPs）（固定数量的S0: 1500µL），并与不同浓度的叶绿素-a (Chl-a) （S1: 1000µL, S2: 1500µL, S3: 2000µL）结合。表征技术包括SEM和AFM来确认SiNWs的形态，UV-Vis光谱来检查Au/Chl-a组合的光学性质，以及电流-电压（I-V）测量来评估增强的光电探测器性能。主要研究结果表明，等离子体-激子偶极相互作用通过形成激子有效地增加了电子-空穴对的分离。此外，热等离子体加热将最佳样品（SiNWs@S2）的温度提高到51.6°C（与基线SiNWs@S0温度40.7°C相比），提高了26.78%。该系统在高性能光学传感应用中显示出良好的潜力。

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引用次数: 0

Annealing temperature dependence of tensile cracking of indium tin oxide films on polycarbonate substrates 聚碳酸酯衬底氧化铟锡薄膜拉伸开裂的退火温度依赖性

IF 2 4区材料科学 Q3 MATERIALS SCIENCE, COATINGS & FILMS

Thin Solid Films

Pub Date : 2025-12-02 DOI: 10.1016/j.tsf.2025.140834

Jiali Zhou , Wenqiao Zhang , Yuandong Chen , Xianhua Huan , Youxiu Wei , Xuan Zhang , Xiaofeng Zhang , Yue Yan

Indium tin oxide (In₂O₃:Sn, ITO) films deposited on rigid polycarbonate (PC) substrates exhibit susceptibility to microcracking under mechanical loading and thermal cycling conditions, compromising the mechanical durability of aerospace transparencies. To address this issue, this study systematically investigated the influence of annealing on tensile cracking behavior and crack resistance of 500 nm ITO films on PC substrates. ITO films were subjected to annealing temperatures of 80 °C to 130 °C for 1 h. In situ electrical resistance test under uniaxial tension was employed to characterize the conductive failure strain (ε_c), a key indicator of crack initiation resistance. The results revealed that ε_c demonstrate a non-monotonic relationship with increasing annealing temperature, with a peak ε_c of 1.01 ± 0.01 % achieved at 120 °C. This temperature-dependent behavior of ε_c is principally governed by the competing effects of thermal compressive stress (resulting from the coefficient of thermal expansion mismatch) and intrinsic tensile stress (associated with microstructural evolution). Furthermore, fracture toughness evaluation through the energy release rate method revealed maximum critical energy release rate values for 120 °C-annealed specimens, indicating optimal crack propagation resistance at this annealing condition.

沉积在刚性聚碳酸酯（PC）衬底上的氧化铟锡（In2O3:Sn， ITO）薄膜在机械载荷和热循环条件下易发生微裂纹，从而影响航天透明材料的机械耐久性。为了解决这一问题，本研究系统地研究了退火对PC衬底上500 nm ITO薄膜拉伸开裂行为和抗裂性能的影响。将ITO薄膜在80 ~ 130℃的温度下退火1 h，采用单轴拉伸下的原位电阻测试来表征导电破坏应变（εc），这是裂纹起裂阻力的关键指标。结果表明，εc随退火温度的升高呈非单调关系，在120℃时达到峰值1.01±0.01%。εc的这种温度依赖行为主要是由热压应力（由热膨胀系数失配引起）和本征拉应力（与微观结构演化有关）的竞争作用所决定的。此外，通过能量释放率法评估断裂韧性，发现120℃退火试样的最大临界能量释放率值表明在该退火条件下裂纹扩展阻力最佳。

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引用次数: 0

Formation of mixed monolayers of organo-modified inorganic nanoparticles with miscible modified chains and interactions between their components 具有混相修饰链的有机修饰无机纳米颗粒混合单层的形成及其组分之间的相互作用

IF 2 4区材料科学 Q3 MATERIALS SCIENCE, COATINGS & FILMS

Thin Solid Films

Pub Date : 2025-11-29 DOI: 10.1016/j.tsf.2025.140833

Ryoma Nakada , Tsubasa Takiguchi , Atsuhiro Fujimori

We investigated the interactions between a mixed Langmuir monolayer of organo-modified nanoclays and nanodiamonds surface-modified with stearyl chains. In the organo-modified nanoclay, the montmorillonite surface was chemically modified with a long-chain quaternary ammonium salt. The organo-diamond surfaces were anionically modified with stearic acid. The modified chains, dimethyl distearyl ammonium chloride, and stearic acid exhibited ideal mixing in a mixed monolayer. Nonetheless, the organo-modified nanoclay and the organo-modified nanodiamond were phase-separated systems in the mixed monolayer. The surface morphology confirmed the independent aggregate morphology of each modified nanoparticle and the maintenance of two-dimensional order between the modified chains. However, the layered regularity of the multilayers was lost. From the results of this study, even if the interactions between the modified chains were compatible, there were cases in which the mixed monolayer became a phase-separated system because of the effect of the size and shape of the nanoparticles bound as hydrophilic groups. This study established a methodology for the miscibility of Langmuir monolayers that combines mesoscopic evaluation using two-dimensional state curves with comparative microscopic morphological evaluation. It also provides a means of establishing a method for patterned morphology control by evaluating the interactions between the modified chain moieties and the nanoparticles.

我们研究了混合朗缪尔单层有机修饰纳米粘土和表面有硬脂基链修饰的纳米金刚石之间的相互作用。在有机改性纳米粘土中，用长链季铵盐对蒙脱土表面进行了化学改性。硬脂酸对有机金刚石表面进行阴离子修饰。改性链、二甲基二硬脂酰氯化铵和硬脂酸在混合单层中表现出理想的混合。然而，有机改性纳米粘土和有机改性纳米金刚石在混合单层中是相分离的体系。表面形貌证实了每个修饰纳米颗粒的独立聚集形态和修饰链之间的二维秩序。然而，多层材料的层状规则性被破坏。从本研究的结果来看，即使修饰链之间的相互作用是相容的，在某些情况下，由于作为亲水性基团结合的纳米颗粒的大小和形状的影响，混合单层成为相分离系统。本研究建立了一种结合使用二维状态曲线的介观评价和比较微观形态评价的Langmuir单层混相性方法。它还提供了一种通过评价修饰链段与纳米颗粒之间的相互作用来建立模式形态控制方法的手段。

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引用次数: 0