Pub Date : 2025-01-23DOI: 10.1016/j.tsf.2025.140612
Vrishank Jambur, Zijian Wang, John Sunderland, Soohyun Im, Xuanxin Hu, Sakiru Akinyemi, John H. Perepezko, Paul M. Voyles, Izabela Szlufarska
We have used ion beam assisted deposition to modify the properties of a thin film Pd77.5Cu6Si16.5 metallic glass without altering the composition. By irradiating the film surface during deposition, the mobility of surface atoms is enhanced, leading to the development of atomically smooth films with increased hardness and kinetic stability. Further, increasing the ion beam energy changes the crystallization pathways in the metallic glass films, pointing to changes in as-deposited structure. This approach to tune the properties of metallic glass films may unlock access to previously unobserved structural states.
{"title":"Ion beam assisted deposition of a thin film metallic glass","authors":"Vrishank Jambur, Zijian Wang, John Sunderland, Soohyun Im, Xuanxin Hu, Sakiru Akinyemi, John H. Perepezko, Paul M. Voyles, Izabela Szlufarska","doi":"10.1016/j.tsf.2025.140612","DOIUrl":"10.1016/j.tsf.2025.140612","url":null,"abstract":"<div><div>We have used ion beam assisted deposition to modify the properties of a thin film Pd<sub>77.5</sub>Cu<sub>6</sub>Si<sub>16.5</sub> metallic glass without altering the composition. By irradiating the film surface during deposition, the mobility of surface atoms is enhanced, leading to the development of atomically smooth films with increased hardness and kinetic stability. Further, increasing the ion beam energy changes the crystallization pathways in the metallic glass films, pointing to changes in as-deposited structure. This approach to tune the properties of metallic glass films may unlock access to previously unobserved structural states.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"812 ","pages":"Article 140612"},"PeriodicalIF":2.0,"publicationDate":"2025-01-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143179472","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-01-20DOI: 10.1016/j.tsf.2025.140610
Alvaro Guerra-Him , Julio C. Carrillo-Sendejas , José-Luis Maldonado , Yaily Fernández-Arteaga , Maiby Valle-Orta , Uriel Sierra , Salvador Fernández
A processable graphene derivative (PGD) is presented for potential application in organic solar cells (OSCs). PGD was mechanically synthesized, suspended in water and used as an alternative anode in two configurations: 1) Three-layer graphene anode (TLGA): PGD/PH1000/PH1000, where PH1000 is a conductive polymer; PGD was deposited by drop-casting and treated with hydriodic acid, to recover its electrical properties, and with UV-ozone plasma, to improve the adhesion of the next layer (PH1000); it achieved a transmittance (T) (at 550 nm) ∼ 74 % and a resistance (R) ∼ 170 Ω/sq. 2) Hybrid multilayer graphene anode (HMGA): PH1000:PGD (4:1 v/v), 6 layers were deposited by spin-coating and treated with hydriodic acid; this electrode showed T (at 550 nm) ∼ 79 % and R ∼ 134 Ω/sq. As a concept test, alternative anodes TLGA and HMGA were implemented in PM6:Y7-based OSCs to confirm the application of PGD. For the alternative cathode, Field's metal, a eutectic alloy composed of Sn, Bi and In, vacuum free deposited, was used; the achieved efficiencies were of ∼ 8.7 % for the control OSCs, ∼ 4.0 % for TLGA and ∼ 1.4 % for HMGA.
{"title":"Processable graphene derivative as an alternative carbon-based electrode","authors":"Alvaro Guerra-Him , Julio C. Carrillo-Sendejas , José-Luis Maldonado , Yaily Fernández-Arteaga , Maiby Valle-Orta , Uriel Sierra , Salvador Fernández","doi":"10.1016/j.tsf.2025.140610","DOIUrl":"10.1016/j.tsf.2025.140610","url":null,"abstract":"<div><div>A processable graphene derivative (PGD) is presented for potential application in organic solar cells (OSCs). PGD was mechanically synthesized, suspended in water and used as an alternative anode in two configurations: 1) Three-layer graphene anode (TLGA): PGD/PH1000/PH1000, where PH1000 is a conductive polymer; PGD was deposited by drop-casting and treated with hydriodic acid, to recover its electrical properties, and with UV-ozone plasma, to improve the adhesion of the next layer (PH1000); it achieved a transmittance (T) (at 550 nm) ∼ 74 % and a resistance (R) ∼ 170 Ω/sq. 2) Hybrid multilayer graphene anode (HMGA): PH1000:PGD (4:1 v/v), 6 layers were deposited by spin-coating and treated with hydriodic acid; this electrode showed T (at 550 nm) ∼ 79 % and R ∼ 134 Ω/sq. As a concept test, alternative anodes TLGA and HMGA were implemented in PM6:Y7-based OSCs to confirm the application of PGD. For the alternative cathode, Field's metal, a eutectic alloy composed of Sn, Bi and In, vacuum free deposited, was used; the achieved efficiencies were of ∼ 8.7 % for the control OSCs, ∼ 4.0 % for TLGA and ∼ 1.4 % for HMGA.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"812 ","pages":"Article 140610"},"PeriodicalIF":2.0,"publicationDate":"2025-01-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143179454","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-01-18DOI: 10.1016/j.tsf.2025.140607
Chengfu Han , Xianhui Wang , Ruifeng Li , Songshan Zhao , Jianhui Tian , Zhenyu Du , Fushan Li
Forsterite films play an important role in enhancing the adhesion of the insulation layer and the magnetic properties of grain-oriented silicon steel. To clarify the microstructure evolution of forsterite film, an experiment involving high-temperature annealing at different temperatures ranging from 850 °C to 1150 °C was performed. Additionally, the reaction processes between MgO and the oxides formed in the decarburization oxide layer, such as SiO2 and Fe2SiO4, were investigated. The initial formation temperature of the forsterite film is found to be within the range of 900 °C – 950 °C. The composition analysis reveals a decrease in the magnesium content from the surface toward the interior of the oxide layer. Up to 1100 °C, there is no longer a transition region between MgO and Fe2SiO4 in the uppermost oxide layer, showing that the surface of oxide layer is composed entirely of forsterite. Simultaneously, with the diffusion of Mg2+, SiO2 in the subsurface region reacts with Mg2+ and is thus transformed into forsterite. The enrichment of aluminum, silicon, and oxygen in the bottom part of the oxide layer at 1100 °C implies the potential formation of mullite. These findings provide valuable insights to tune and control the forsterite film in grain-oriented silicon steel.
{"title":"Microstructure evolution of forsterite film during the high-temperature annealing process in grain-oriented silicon steel","authors":"Chengfu Han , Xianhui Wang , Ruifeng Li , Songshan Zhao , Jianhui Tian , Zhenyu Du , Fushan Li","doi":"10.1016/j.tsf.2025.140607","DOIUrl":"10.1016/j.tsf.2025.140607","url":null,"abstract":"<div><div>Forsterite films play an important role in enhancing the adhesion of the insulation layer and the magnetic properties of grain-oriented silicon steel. To clarify the microstructure evolution of forsterite film, an experiment involving high-temperature annealing at different temperatures ranging from 850 °C to 1150 °C was performed. Additionally, the reaction processes between MgO and the oxides formed in the decarburization oxide layer, such as SiO<sub>2</sub> and Fe<sub>2</sub>SiO<sub>4</sub>, were investigated. The initial formation temperature of the forsterite film is found to be within the range of 900 °C – 950 °C. The composition analysis reveals a decrease in the magnesium content from the surface toward the interior of the oxide layer. Up to 1100 °C, there is no longer a transition region between MgO and Fe<sub>2</sub>SiO<sub>4</sub> in the uppermost oxide layer, showing that the surface of oxide layer is composed entirely of forsterite. Simultaneously, with the diffusion of Mg<sup>2+</sup>, SiO<sub>2</sub> in the subsurface region reacts with Mg<sup>2+</sup> and is thus transformed into forsterite. The enrichment of aluminum, silicon, and oxygen in the bottom part of the oxide layer at 1100 °C implies the potential formation of mullite. These findings provide valuable insights to tune and control the forsterite film in grain-oriented silicon steel.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"812 ","pages":"Article 140607"},"PeriodicalIF":2.0,"publicationDate":"2025-01-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143179470","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The conditions for Cu film formation by friction stirring on Al2O3 and AlN substrates were investigated to develop a Cu circuit pattern formation technology. Different consumable tool geometries resulted in different processing interface temperatures, which had a significant effect on Cu film formation. A Cu film was formed effectively on the AlN substrate, which had high thermal conductivity, by heating the substrate at 100 °C. Finite element simulation revealed that when the substrate was heated at 100 °C, the processing interface temperature was 78 °C higher, even with a weak tool pushing force of 0.3 kN. The rod tool roughened the substrate surface more than the pipe tool, and the Cu film was mechanically bonded to the substrate with higher adhesion strength. Friction stirring was confirmed to be an effective tool for Cu circuit pattern formation.
{"title":"Effect of fabrication conditions on Cu film formation on Al2O3 and AlN substrates by friction stirring","authors":"Hirosuke Sonomura , Ryota Nonami , Gentoku Yoshida , Keigo Nakano , Kazuaki Katagiri , Tomoatsu Ozaki","doi":"10.1016/j.tsf.2024.140599","DOIUrl":"10.1016/j.tsf.2024.140599","url":null,"abstract":"<div><div>The conditions for Cu film formation by friction stirring on Al<sub>2</sub>O<sub>3</sub> and AlN substrates were investigated to develop a Cu circuit pattern formation technology. Different consumable tool geometries resulted in different processing interface temperatures, which had a significant effect on Cu film formation. A Cu film was formed effectively on the AlN substrate, which had high thermal conductivity, by heating the substrate at 100 °C. Finite element simulation revealed that when the substrate was heated at 100 °C, the processing interface temperature was 78 °C higher, even with a weak tool pushing force of 0.3 kN. The rod tool roughened the substrate surface more than the pipe tool, and the Cu film was mechanically bonded to the substrate with higher adhesion strength. Friction stirring was confirmed to be an effective tool for Cu circuit pattern formation.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"810 ","pages":"Article 140599"},"PeriodicalIF":2.0,"publicationDate":"2025-01-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143167816","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-01-15DOI: 10.1016/j.tsf.2024.140598
Kuang-Kuo Wang, Dershin Gan
The silver-aluminum interface reaction has continued to attract significant interest in recent years, particularly with the development of silver and silver alloy wires for advanced wire bonding techniques. The purpose of this study is to investigate the orientation relationships and interface between mu (μ)-Ag3Al and Ag, as well as formation sequence of gamma (γ)-Ag2Al and μ-Ag3Al at the Ag/Al interface. The orientation relationships and interfaces between μ-Ag3Al and Ag have been studied by transmission electron microscopy (TEM). Epitaxial (001)Ag thin films was grown on the NaCl (001) surface and then Al was evaporated onto the Ag film form μ-Ag3Al. Results showed that the γ-Ag2Al first formed at Ag/Al interface and then the μ-Ag3Al formed after annealing at 350 °C for 5 min. The orientation relationships were found: (1) [221]μ//[001]Ag (zone axis), μ//(110)Ag, and μ//Ag at γ-Ag2Al/Ag interface and (2) [0001]γ//[221]μ (zone axis), γ//μ, and γ//μ at Ag/Al interface. The μ/Ag and γ/μ interfaces were further analyzed by the surface structures and the orientation relationships.
That γ-Ag2Al forms before μ-Ag3Al in the solid-state Ag/Al interfacial reactions was discussed by heterogeneous nucleation theory. Analysis of the interfaces showed that the γ-Ag2Al/Ag interfacial energies with better interfacial coherency were lower than those that of the μ-Ag3Al/Ag. In addition, the energy of formation of γ-Ag2Al is slightly larger than that of μ-Ag3Al. Therefore γ-Ag2Al forms before μ-Ag3Al.
{"title":"The orientation relationships of Ag3Al/Ag interfaces and formation sequence of Ag2Al and Ag3Al at the Ag/Al interface","authors":"Kuang-Kuo Wang, Dershin Gan","doi":"10.1016/j.tsf.2024.140598","DOIUrl":"10.1016/j.tsf.2024.140598","url":null,"abstract":"<div><div>The silver-aluminum interface reaction has continued to attract significant interest in recent years, particularly with the development of silver and silver alloy wires for advanced wire bonding techniques. The purpose of this study is to investigate the orientation relationships and interface between mu (μ)-Ag<sub>3</sub>Al and Ag, as well as formation sequence of gamma (γ)-Ag<sub>2</sub>Al and μ-Ag<sub>3</sub>Al at the Ag/Al interface. The orientation relationships and interfaces between μ-Ag<sub>3</sub>Al and Ag have been studied by transmission electron microscopy (TEM). Epitaxial (001)<sub>Ag</sub> thin films was grown on the NaCl (001) surface and then Al was evaporated onto the Ag film form μ-Ag<sub>3</sub>Al. Results showed that the γ-Ag<sub>2</sub>Al first formed at Ag/Al interface and then the μ-Ag<sub>3</sub>Al formed after annealing at 350 °C for 5 min. The orientation relationships were found: (1) [221]<sub>μ</sub>//[001]<sub>Ag</sub> (zone axis), <span><math><mrow><mo>(</mo><mrow><mover><mn>1</mn><mo>¯</mo></mover><mn>10</mn></mrow><mo>)</mo></mrow></math></span><sub>μ</sub>//(110)<sub>Ag</sub>, and <span><math><mrow><mo>(</mo><mrow><mn>11</mn><mover><mn>4</mn><mo>¯</mo></mover></mrow><mo>)</mo></mrow></math></span><sub>μ</sub>//<span><math><mrow><mo>(</mo><mrow><mover><mn>1</mn><mo>¯</mo></mover><mn>10</mn></mrow><mo>)</mo></mrow></math></span><sub>Ag</sub> at γ-Ag<sub>2</sub>Al/Ag interface and (2) [0001]<sub>γ</sub>//[221]<sub>μ</sub> (zone axis), <span><math><mrow><mo>(</mo><mrow><mover><mn>1</mn><mo>¯</mo></mover><mn>100</mn></mrow><mo>)</mo></mrow></math></span><sub>γ</sub>//<span><math><mrow><mo>(</mo><mrow><mn>1</mn><mover><mn>1</mn><mo>¯</mo></mover><mn>0</mn></mrow><mo>)</mo></mrow></math></span><sub>μ</sub>, and <span><math><mrow><mo>(</mo><mrow><mover><mn>1</mn><mo>¯</mo></mover><mover><mn>1</mn><mo>¯</mo></mover><mn>20</mn></mrow><mo>)</mo></mrow></math></span><sub>γ</sub>//<span><math><mrow><mo>(</mo><mrow><mn>11</mn><mover><mn>4</mn><mo>¯</mo></mover></mrow><mo>)</mo></mrow></math></span><sub>μ</sub> at Ag/Al interface. The μ/Ag and γ/μ interfaces were further analyzed by the surface structures and the orientation relationships.</div><div>That γ-Ag<sub>2</sub>Al forms before μ-Ag<sub>3</sub>Al in the solid-state Ag/Al interfacial reactions was discussed by heterogeneous nucleation theory. Analysis of the interfaces showed that the γ-Ag<sub>2</sub>Al/Ag interfacial energies with better interfacial coherency were lower than those that of the μ-Ag<sub>3</sub>Al/Ag. In addition, the energy of formation of γ-Ag<sub>2</sub>Al is slightly larger than that of μ-Ag<sub>3</sub>Al. Therefore γ-Ag<sub>2</sub>Al forms before μ-Ag<sub>3</sub>Al.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"810 ","pages":"Article 140598"},"PeriodicalIF":2.0,"publicationDate":"2025-01-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143167340","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-01-15DOI: 10.1016/j.tsf.2025.140601
S.I. Petrushenko , K. Adach , M. Fijalkowski , V.R. Kopach , Y.M. Shepotko , S.V. Dukarov , R.V. Sukhov , A. Fedonenko , A.L. Khrypunova , N.P. Klochko
The development of efficient piezoelectric/triboelectric textile materials for highly sensitive wearable autonomous pressure, shock and vibration sensors holds promise for use in health monitoring, motion detection, human-machine interaction, and active touch matrices for electronic skin of soft robots. In this work, arrays of zinc oxide nanorods (ZnONR) and nanotubes (ZnONT) oriented vertically on the surface of carbon fabric (CF) were grown from aqueous solutions with concentrations of zinc nitrate and hexamethylenetetramine (HMTA) in the range of 50–100 mM using a seed-mediated microwave hydrothermal method. The results of tests of experimental samples of pressure and impact sensors based on various compositions of double-electrode and single-electrode piezoelectric/triboelectric nanogenerators (PTENGs) of contact-separation mode with textile parts of CF/ZnONR and CF/ZnONT confirmed the coupling of piezoelectric and triboelectric effects. The tests have shown that the efficiency of all developed PTENGs increases with increasing contact area of nanostructured zinc oxide arrays, and therefore ZnO nanorods have proven to be more promising for use in all types of PTENGs. The best responses were recorded for pressure, impact and vibration sensors based on PTENG with a piezoelectric/triboelectric textile part CF/ZnONR obtained by the microwave hydrothermal method in the solution of 100 mM Zn(NO3)2 and 100 mM HMTA. Comparison of their sensitivity with the sensitivity data of wearable triboelectric pressure and strain sensors, as well as hybrid piezotriboelectric and triboelectric flexible vibration sensors, showed that the sensitivity data obtained in this work is on the same level or superior to the best state-of-the-art.
{"title":"Zinc oxide nanorods and nanotubes arrays grown on carbon fabric by microwave hydrothermal method for self-powered piezoelectric/triboelectric sensors","authors":"S.I. Petrushenko , K. Adach , M. Fijalkowski , V.R. Kopach , Y.M. Shepotko , S.V. Dukarov , R.V. Sukhov , A. Fedonenko , A.L. Khrypunova , N.P. Klochko","doi":"10.1016/j.tsf.2025.140601","DOIUrl":"10.1016/j.tsf.2025.140601","url":null,"abstract":"<div><div>The development of efficient piezoelectric/triboelectric textile materials for highly sensitive wearable autonomous pressure, shock and vibration sensors holds promise for use in health monitoring, motion detection, human-machine interaction, and active touch matrices for electronic skin of soft robots. In this work, arrays of zinc oxide nanorods (ZnONR) and nanotubes (ZnONT) oriented vertically on the surface of carbon fabric (CF) were grown from aqueous solutions with concentrations of zinc nitrate and hexamethylenetetramine (HMTA) in the range of 50–100 mM using a seed-mediated microwave hydrothermal method. The results of tests of experimental samples of pressure and impact sensors based on various compositions of double-electrode and single-electrode piezoelectric/triboelectric nanogenerators (PTENGs) of contact-separation mode with textile parts of CF/ZnONR and CF/ZnONT confirmed the coupling of piezoelectric and triboelectric effects. The tests have shown that the efficiency of all developed PTENGs increases with increasing contact area of nanostructured zinc oxide arrays, and therefore ZnO nanorods have proven to be more promising for use in all types of PTENGs. The best responses were recorded for pressure, impact and vibration sensors based on PTENG with a piezoelectric/triboelectric textile part CF/ZnONR obtained by the microwave hydrothermal method in the solution of 100 mM Zn(NO<sub>3</sub>)<sub>2</sub> and 100 mM HMTA. Comparison of their sensitivity with the sensitivity data of wearable triboelectric pressure and strain sensors, as well as hybrid piezotriboelectric and triboelectric flexible vibration sensors, showed that the sensitivity data obtained in this work is on the same level or superior to the best state-of-the-art.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"810 ","pages":"Article 140601"},"PeriodicalIF":2.0,"publicationDate":"2025-01-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143167341","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-01-15DOI: 10.1016/j.tsf.2025.140602
E.F.M. El-Zaidia , A.A.A. Darwish , Saleem I. Qashou , H.A.M. Ali
This study investigates the structural and optical properties of Erythrosine B thin films. The films were fabricated through thermal evaporation and annealed at 423, 473, and 523 K. X-ray diffraction revealed that the films were initially amorphous, but their amorphous nature decreased with annealing. Optical transmittance and reflectance were measured across a wavelength range of 190– 2500 nm. After annealing, the transmittance dropped from 75% (as-deposited) to 40% at around 520 nm. The optical band gap also narrowed, reducing from 1.67 to 1.40 eV at 523 K. The refractive index showed anomalous dispersion below 900 nm and normal dispersion above, with ε∞ values increasing from 2.14 to 2.74 as the annealing temperature rose. Additionally, the third-order nonlinear optical susceptibility decreased with annealing, with higher values observed in the as-deposited films. These results suggest that Erythrosine B thin films have the potential for photonic and optoelectronic applications due to their adjustable optical properties and thermal stability.
{"title":"Relevance of linear and nonlinear optical properties of Erythrosine B thin films for photonic application","authors":"E.F.M. El-Zaidia , A.A.A. Darwish , Saleem I. Qashou , H.A.M. Ali","doi":"10.1016/j.tsf.2025.140602","DOIUrl":"10.1016/j.tsf.2025.140602","url":null,"abstract":"<div><div>This study investigates the structural and optical properties of Erythrosine B thin films. The films were fabricated through thermal evaporation and annealed at 423, 473, and 523 K. X-ray diffraction revealed that the films were initially amorphous, but their amorphous nature decreased with annealing. Optical transmittance and reflectance were measured across a wavelength range of 190– 2500 nm. After annealing, the transmittance dropped from 75% (as-deposited) to 40% at around 520 nm. The optical band gap also narrowed, reducing from 1.67 to 1.40 eV at 523 K. The refractive index showed anomalous dispersion below 900 nm and normal dispersion above, with <em>ε</em><sub>∞</sub> values increasing from 2.14 to 2.74 as the annealing temperature rose. Additionally, the third-order nonlinear optical susceptibility decreased with annealing, with higher values observed in the as-deposited films. These results suggest that Erythrosine B thin films have the potential for photonic and optoelectronic applications due to their adjustable optical properties and thermal stability.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"810 ","pages":"Article 140602"},"PeriodicalIF":2.0,"publicationDate":"2025-01-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143167342","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-01-01DOI: 10.1016/j.tsf.2024.140591
Muhammad Shamim Al Mamun , Tsuyoshi Takaoka , Tadahiro Komeda
It has been reported that the electrical characteristics of molybdenum disulfide field effect transistors can be customized through the chemical integration of mechanically exfoliated multilayer MoS2 by caffeine. The device was completely submerged in the caffeine solution for 15 s, dried with a N2 cannon, and its electrical characteristics were assessed. Caffeine causes n-doping in the multilayer MoS2, as confirmed by transfer characteristics, Raman spectroscopic analysis and X-ray Photoelectron Spectroscopy. After the doping procedure, the threshold voltage moved to the left, and the electrical property increased at room temperature outside without causing any damage to the device. The Raman spectrum's downward trend in peak shifting of the E2g and A1g peaks following the functionalization of caffeine molecules shows an increase in electron concentration on the MoS2 surface. In comparison to the pristine device, the extracted field effect mobility increased by a factor of 5.5. Compared to the pristine device (4.6 V/decade), the subthreshold swing was decreased to 1.6 V/decade. After doping, the device was annealed for 15 min at 90 °C, which brought it very near to being immaculate. Additionally, the n-type doping by caffeine was shown by X-ray Photoelectron Spectroscopy analysis. The MoS2 surface exhibited caffeine adsorption, as demonstrated by the Time-of-Flight Secondary Ionization Mass Spectrometry measurement.
{"title":"Caffeine-driven n-type doping in multilayer MoS2 field effect transistor","authors":"Muhammad Shamim Al Mamun , Tsuyoshi Takaoka , Tadahiro Komeda","doi":"10.1016/j.tsf.2024.140591","DOIUrl":"10.1016/j.tsf.2024.140591","url":null,"abstract":"<div><div>It has been reported that the electrical characteristics of molybdenum disulfide field effect transistors can be customized through the chemical integration of mechanically exfoliated multilayer MoS<sub>2</sub> by caffeine. The device was completely submerged in the caffeine solution for 15 s, dried with a N<sub>2</sub> cannon, and its electrical characteristics were assessed. Caffeine causes n-doping in the multilayer MoS<sub>2</sub>, as confirmed by transfer characteristics, Raman spectroscopic analysis and X-ray Photoelectron Spectroscopy. After the doping procedure, the threshold voltage moved to the left, and the electrical property increased at room temperature outside without causing any damage to the device. The Raman spectrum's downward trend in peak shifting of the <em>E</em><sub>2</sub> <sub>g</sub> and <em>A</em><sub>1</sub> <sub>g</sub> peaks following the functionalization of caffeine molecules shows an increase in electron concentration on the MoS<sub>2</sub> surface. In comparison to the pristine device, the extracted field effect mobility increased by a factor of 5.5. Compared to the pristine device (4.6 V/decade), the subthreshold swing was decreased to 1.6 V/decade. After doping, the device was annealed for 15 min at 90 °C, which brought it very near to being immaculate. Additionally, the n-type doping by caffeine was shown by X-ray Photoelectron Spectroscopy analysis. The MoS<sub>2</sub> surface exhibited caffeine adsorption, as demonstrated by the Time-of-Flight Secondary Ionization Mass Spectrometry measurement.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"809 ","pages":"Article 140591"},"PeriodicalIF":2.0,"publicationDate":"2025-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143177611","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-01-01DOI: 10.1016/j.tsf.2024.140587
Wangping Wu, Zhengjie Xing, Liu Ju
Palladium-nickel (Pd-Ni) alloy films were electrodeposited on copper supports. The influence of deposition parameters on the surface morphology and chemical composition of the films was investigated. The surface morphology, chemical composition and elemental states of the films were characterized using scanning electron microscopy, energy-dispersive spectroscopy and X-ray photoelectron spectroscopy, respectively. The electrocatalytic performance of the selected films was evaluated through linear sweep voltammetry, electrochemical impedance spectroscopy and cyclic voltammetry. The results demonstrate that the deposition parameters significantly influenced the deposition rate of the films. The deposition rate increased with the current density, showing a change trend in initially increase and then decrease with the rise in bath temperature and deposition time. The particle size of the film increased with both current density and deposition time. Pd-Ni films exhibited the face-centered cubic structure of polycrystalline phase, the grain size and lattice parameters decreased as the Ni-content increased. Pd78Ni22 film with many spherical particles exhibited good electrocatalytic activity in alkaline solution, requiring only the overpotential of 162 mV to achieve a current density of 10 mA·cm−², which demonstrated a low Tafel slope of 47.6 mV·dec−1 and an exchange current density as high as 0.326 mA·cm−2.
{"title":"Electrodeposition and electrocatalytic performance of Pd-Ni alloy films from aqueous solutions for enhanced electrochemical hydrogen evolution","authors":"Wangping Wu, Zhengjie Xing, Liu Ju","doi":"10.1016/j.tsf.2024.140587","DOIUrl":"10.1016/j.tsf.2024.140587","url":null,"abstract":"<div><div>Palladium-nickel (Pd-Ni) alloy films were electrodeposited on copper supports. The influence of deposition parameters on the surface morphology and chemical composition of the films was investigated. The surface morphology, chemical composition and elemental states of the films were characterized using scanning electron microscopy, energy-dispersive spectroscopy and X-ray photoelectron spectroscopy, respectively. The electrocatalytic performance of the selected films was evaluated through linear sweep voltammetry, electrochemical impedance spectroscopy and cyclic voltammetry. The results demonstrate that the deposition parameters significantly influenced the deposition rate of the films. The deposition rate increased with the current density, showing a change trend in initially increase and then decrease with the rise in bath temperature and deposition time. The particle size of the film increased with both current density and deposition time. Pd-Ni films exhibited the face-centered cubic structure of polycrystalline phase, the grain size and lattice parameters decreased as the Ni-content increased. Pd<sub>78</sub>Ni<sub>22</sub> film with many spherical particles exhibited good electrocatalytic activity in alkaline solution, requiring only the overpotential of 162 mV to achieve a current density of 10 mA·cm<sup>−</sup>², which demonstrated a low Tafel slope of 47.6 mV·dec<sup>−1</sup> and an exchange current density as high as 0.326 mA·cm<sup>−2</sup>.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"809 ","pages":"Article 140587"},"PeriodicalIF":2.0,"publicationDate":"2025-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143177614","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-01-01DOI: 10.1016/j.tsf.2024.140585
Ying Liu , Guihong Song , Kaiping Tai , Zhi Yu , Yijun Ran , Juan He , Yusheng Wu
The influence of Mg/Sn ratio of on the thermoelectric properties of Mg-Sn films was deeply studied through preparing a series of Mg2Sn films with different Mg and Sn atomic ratios on SiO2/Si substrate. The results showed that the phase structure of the deposited Mg2Sn films varied from a metastable orthogonal phase to a mixture of orthogonal and cubic phase, and then to a highly symmetric cubic phase with increasing [Mg]/[Sn]. Meanwhile, with increasing [Mg]/[Sn], the carrier concentration and electrical conductivity of the deposited films first decreased and then increased, while the carrier mobility and Seebeck coefficient varied in an opposite trend. The cubic Mg2Sn phase film with [Mg]/[Sn] = 1.94 has the highest Seebeck coefficient and appropriate electrical conductivity, reaching the highest power factor of 3.10 μW cm-1 K-2 at 235 °C and figure of merit of 0.059 at 125 °C.
{"title":"Influence of atomic ratio of Mg to Sn on thermoelectric properties of Mg2Sn films","authors":"Ying Liu , Guihong Song , Kaiping Tai , Zhi Yu , Yijun Ran , Juan He , Yusheng Wu","doi":"10.1016/j.tsf.2024.140585","DOIUrl":"10.1016/j.tsf.2024.140585","url":null,"abstract":"<div><div>The influence of Mg/Sn ratio of on the thermoelectric properties of Mg-Sn films was deeply studied through preparing a series of Mg<sub>2</sub>Sn films with different Mg and Sn atomic ratios on SiO<sub>2</sub>/Si substrate. The results showed that the phase structure of the deposited Mg<sub>2</sub>Sn films varied from a metastable orthogonal phase to a mixture of orthogonal and cubic phase, and then to a highly symmetric cubic phase with increasing [Mg]/[Sn]. Meanwhile, with increasing [Mg]/[Sn], the carrier concentration and electrical conductivity of the deposited films first decreased and then increased, while the carrier mobility and Seebeck coefficient varied in an opposite trend. The cubic Mg<sub>2</sub>Sn phase film with [Mg]/[Sn] = 1.94 has the highest Seebeck coefficient and appropriate electrical conductivity, reaching the highest power factor of 3.10 μW cm<sup>-1</sup> K<sup>-2</sup> at 235 °C and figure of merit of 0.059 at 125 °C.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"809 ","pages":"Article 140585"},"PeriodicalIF":2.0,"publicationDate":"2025-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143178137","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}