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Effect of inserting a-C layers on anticorrosion behavior of Ni-NiCr-NiCrAlSi composite coating on copper through magnetron sputtering for marine applications 通过磁控溅射在铜上镀镍-镍铬-镍铬-铝硅复合层对海洋应用中的防腐行为的影响
IF 2 4区 材料科学 Q3 MATERIALS SCIENCE, COATINGS & FILMS Pub Date : 2024-10-20 DOI: 10.1016/j.tsf.2024.140558
Hao Du , Jiayuan Wen , Guihong Song , Hao Wu , Ji-an Feng , Yan Huang , Yujiang Wang , Yansheng Yin
Amorphous carbon film by magnetron sputtering was inserted in the NiCrAlSi layer to form NiCrAlSi/a-C multilayer with modulation period in a range of 131.6 nm to 240.2 nm in the Ni-NiCr-NiCrAlSi coating for a further improvement to copper on corrosion resistance aiming at application as a heat exchanger for mariculture in sea water. After structure characterization, the corrosion behavior of the samples with variant modulation periods of the NiCrAlSi/a-C multilayer keeping the same total thickness(1 μm) was compared using potentiodynamic polarization and electrochemical impedance spectroscopy. The polarization curves show that the corrosion potentials of the coatings with modulation periods of 240.2 nm, 198.4 nm, 158.4 nm and bilayer number 4, 5, 6 for NiCrAlSi/a-C layer are more negative compared to that with modulation period of 131.6 nm and bilayer number 7, which indicates that the smallest modulation period results in the highest corrosion resistance. The amorphous a-C sublayer in the multilayer coatings plays an active role in the improvement, for an introduction of the more interfaces between the NiCrAlSi and the a-C sublayers, as well as the compact structure and the chemical inertness to sea water (Cl). In addition, the NiCrAlSi sublayer can be regarded as an interlayer to release stress in both the a-C sublayer and the NiCrAlSi sublayer, mainly from corrosion products, which also plays an important role for the improved corrosion resistance.
通过磁控溅射在镍铬硅层中加入无定形碳膜,形成镍铬硅/a-C 多层,镍铬硅-镍铬硅涂层的调制周期范围为 131.6 纳米到 240.2 纳米,以进一步提高铜的耐腐蚀性,从而应用于海水养殖的热交换器。在完成结构表征后,使用电位极化和电化学阻抗光谱法比较了在总厚度(1 μm)不变的情况下,镍铬铝硅/a-C 多层的不同调制周期样品的腐蚀行为。极化曲线显示,调制周期为 240.2 nm、198.4 nm、158.4 nm 和双层数为 4、5、6 的镍铬铝硅/a-C 涂层的腐蚀电位比调制周期为 131.6 nm 和双层数为 7 的镍铬铝硅/a-C 涂层的腐蚀电位更负,这表明调制周期越小,耐腐蚀性越强。多层镀膜中的无定形 a-C 子层在提高耐腐蚀性方面发挥了积极作用,因为它在 NiCrAlSi 和 a-C 子层之间引入了更多的界面,同时还具有紧凑的结构和对海水(Cl-)的化学惰性。此外,NiCrAlSi 亚层可被视为一个夹层,可释放 a-C 亚层和 NiCrAlSi 亚层中的应力,主要来自腐蚀产物,这对提高耐腐蚀性也起着重要作用。
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引用次数: 0
Exfoliation of self-assembled 2D aluminum synthesized via magnetron sputtering 通过磁控溅射合成的自组装二维铝的剥离现象
IF 2 4区 材料科学 Q3 MATERIALS SCIENCE, COATINGS & FILMS Pub Date : 2024-10-18 DOI: 10.1016/j.tsf.2024.140557
Bo Zhang , Petr Janicek , Tomas Wagner
Two-dimensional materials have been rapidly developed in recent years. As a type of two-dimensional material, 2D metals exhibit many unique physical and chemical properties. Here, we prepared two-dimensional aluminum materials via magnetron sputtering. The layers were exfoliated via sonication and annealing methods (thermal exfoliation methods). After exfoliation, the layers were observed via optical microscopy, scanning electron microscopy and transmission electron microscopy. The atomic force microscopy results show that the thicknesses of the layers range from ∼1 nm to ∼45 nm. The simulation results supported those two-dimensional layers formed in a self-assembly process.
近年来,二维材料得到了迅速发展。作为二维材料的一种,二维金属表现出许多独特的物理和化学特性。在这里,我们通过磁控溅射制备了二维铝材料。通过超声和退火方法(热剥离法)剥离层。剥离后,通过光学显微镜、扫描电子显微镜和透射电子显微镜对层进行观察。原子力显微镜结果表明,层的厚度从 1 纳米到 45 纳米不等。模拟结果支持这些二维层是在自组装过程中形成的。
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引用次数: 0
Gold nanoparticles decoration of zinc oxide nanowalls on flexible substrates 金纳米粒子装饰柔性基底上的氧化锌纳米壁
IF 2 4区 材料科学 Q3 MATERIALS SCIENCE, COATINGS & FILMS Pub Date : 2024-10-15 DOI: 10.1016/j.tsf.2024.140553
R. Ofek Almog , E. Shashar , K. Kadan-Jamal , Y. Shacham-Diamand
Metal oxide nanostructures decorated with noble metal nanoparticles are hybrid structures with a special interface that combines the unique properties of those two materials. Noble metal nanoparticles exhibit useful catalytic properties, and they can be functionalized with biomaterials. In this work, we use gold nanoparticles that can be functionalized using thiolated molecules bound to the metal surface. Zinc oxide nano-walls (NWs) are a high surface-to-volume ratio wide-bandgap semiconductor nanostructures that, due to their biocompatibility and non-toxicity characteristics, can be used in biosensing applications that involve contact with tissues and cells. ZnO nano-walls can be deposited from aqueous solutions at low temperatures, both on rigid and flexible substrates, using a simple and low-cost process that can be upscaled to high-volume production. In this work, we study the nucleation and growth of the ZnO nano-walls and we describe the gold nanoparticles decoration at three different schemes of surface functionalization. Among these schemes, we found that the process where ZnO nano-walls were deposited on polyimide substrates followed by activation using a self-assembled monolayer, resulted in a decoration with uniform size and distribution of gold nano-particles. That process was studied as a function of the growth temperature, solution concentration, and time. The morphology of the ZnO nano-walls was studied by Scanning Electron microscope imaging and the crystal structure was studied by X-ray diffraction.
用贵金属纳米颗粒装饰的金属氧化物纳米结构是一种混合结构,其特殊的界面结合了这两种材料的独特性能。贵金属纳米颗粒具有有用的催化特性,而且可以与生物材料功能化。在这项工作中,我们使用的金纳米粒子可通过与金属表面结合的硫醇分子实现功能化。氧化锌纳米壁(NWs)是一种高表面体积比的宽带隙半导体纳米结构,由于其生物相容性和无毒性特点,可用于涉及与组织和细胞接触的生物传感应用。氧化锌纳米壁可在低温下从水溶液中沉积在刚性和柔性基底上,其工艺简单、成本低廉,并可升级至大批量生产。在这项工作中,我们研究了氧化锌纳米壁的成核和生长,并介绍了三种不同表面功能化方案下的金纳米粒子装饰。在这些方案中,我们发现,将氧化锌纳米壁沉积在聚酰亚胺基底上,然后使用自组装单层进行活化的过程,能产生尺寸和分布均匀的金纳米粒子装饰。研究了这一过程与生长温度、溶液浓度和时间的函数关系。通过扫描电子显微镜成像研究了氧化锌纳米壁的形态,并通过 X 射线衍射研究了晶体结构。
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引用次数: 0
Impact of plasma power on plasma enhanced atomic layer deposited TiO2 as a spacer 等离子体功率对作为间隔物的等离子体增强型原子层沉积二氧化钛的影响
IF 2 4区 材料科学 Q3 MATERIALS SCIENCE, COATINGS & FILMS Pub Date : 2024-10-11 DOI: 10.1016/j.tsf.2024.140551
Hee jun Yoon , Hyeongtag Jeon
As the size of devices is scaled down, micro-patterning technology is increasing in importance. In micro-patterning, spacers require precise thickness and uniform deposition at low temperature. To meet these requirements, atomic layer deposition (ALD), which can be controlled to an accurate thickness, was introduced. Therefore, we investigated plasma-enhanced ALD using radicals for high reactivity. Optical emission spectroscopy and a Langmuir probe were used to evaluate plasma properties such as radical intensity and plasma density at different plasma powers. Regardless of plasma power, growth per cycle and compositions of Ti and O remained constant. X-ray photoelectron spectroscopy showed that application of 500 W decreased the area of Ti2O3 from 20.2 % to 4.5 % compared with 100 W due to the increased amount of oxygen radicals. X-ray reflectivity results showed a 4.09 g/cm3 density of TiO2 film at 100 W, which increased to 4.2 g/cm3 at 500 W, indicating a decrease of Ti2O3. Meanwhile, the wet etch rate of TiO2 film was 1.72 Å/min at 100 W and 0.8 Å/min at 500 W, and the denser film had superior etch resistance. Finally, transmission electron microscopy showed that step coverage of TiO2 films improved from 90.9 % to 99.9 % with increasing power. Thus, application of high power effectively improved the properties of TiO2 films.
随着设备尺寸的缩小,微图案技术的重要性与日俱增。在微图案技术中,间隔层需要精确的厚度和低温下均匀的沉积。为了满足这些要求,我们引入了可控制精确厚度的原子层沉积(ALD)技术。因此,我们研究了使用高反应性自由基的等离子体增强 ALD。我们使用光学发射光谱和朗缪尔探针来评估等离子体的特性,如不同等离子体功率下的自由基强度和等离子体密度。无论等离子体功率如何,每个周期的生长以及 Ti 和 O 的成分都保持不变。X 射线光电子能谱显示,与 100 W 相比,由于氧自由基的数量增加,500 W 的应用使 Ti2O3 的面积从 20.2% 减少到 4.5%。X 射线反射率结果显示,100 W 时 TiO2 薄膜的密度为 4.09 g/cm3,500 W 时增加到 4.2 g/cm3,这表明 Ti2O3 有所减少。同时,TiO2 薄膜的湿蚀刻速率在 100 W 时为 1.72 Å/min,在 500 W 时为 0.8 Å/min,更致密的薄膜具有更好的抗蚀刻性。最后,透射电子显微镜显示,随着功率的增加,TiO2 薄膜的阶跃覆盖率从 90.9% 提高到 99.9%。因此,高功率的应用有效地改善了二氧化钛薄膜的性能。
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引用次数: 0
Effects of ultraviolet sterilization exposure on the structural and surface properties of graphite-/polymer-like carbon films 紫外线消毒照射对石墨/聚合物类碳薄膜的结构和表面特性的影响
IF 2 4区 材料科学 Q3 MATERIALS SCIENCE, COATINGS & FILMS Pub Date : 2024-10-10 DOI: 10.1016/j.tsf.2024.140549
Kazuya Kanasugi , Eito Ichijo , Ali Alanazi , Yasuharu Ohgoe , Yoshinobu Manome , Masanori Hiratsuka , Kenji Hirakuri
Existing research on the biological responses of amorphous carbon films has not adequately explored the influences of exposure to ultraviolet (UV) sterilization at 253.7 nm before cell culture. Thus, in this study, two types of amorphous carbon films, namely hydrogen-rich graphite-like carbon (GLC) and hydrogen-free polymer-like carbon (PLC) films, were deposited on Si substrates. The influences of different doses of UV sterilization exposure (at 253.7 nm) on the structures and surface properties of the amorphous carbon films were investigated. Spectroscopic ellipsometry and Raman analysis showed that there is no significant change in the optical constants and Raman spectra of GLC and PLC films. The surface properties of the amorphous carbon films, characterized by water contact angle measurements and X-ray photoelectron spectroscopy analysis, indicated that both types of films exhibited hydrophilicity and surface oxidation in response to UV sterilization. However, the effects of UV sterilization on PLC were more notable than those on GLC. Our findings highlight the need for standardization and optimization of UV sterilization conditions for specific films to promote the application of amorphous carbon film coatings in the medical domain.
现有关于无定形碳薄膜生物反应的研究尚未充分探讨细胞培养前暴露于 253.7 纳米紫外线(UV)灭菌的影响。因此,本研究在硅基底上沉积了两种类型的无定形碳薄膜,即富氢石墨样碳薄膜(GLC)和无氢聚合物样碳薄膜(PLC)。研究了不同剂量的紫外线消毒照射(253.7 纳米)对无定形碳薄膜的结构和表面特性的影响。光谱椭偏仪和拉曼光谱分析表明,GLC 和 PLC 薄膜的光学常数和拉曼光谱没有显著变化。通过水接触角测量和 X 射线光电子能谱分析,研究了无定形碳薄膜的表面特性,结果表明两种薄膜在紫外线灭菌后都表现出亲水性和表面氧化性。不过,紫外线灭菌对 PLC 的影响比对 GLC 的影响更明显。我们的研究结果凸显了针对特定薄膜进行紫外线灭菌条件标准化和优化的必要性,以促进无定形碳薄膜涂层在医疗领域的应用。
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引用次数: 0
Compositional changes between metastable SnO and stable SnO2 in a sputtered film for p-type thin-film transistors 用于 p 型薄膜晶体管的溅射薄膜中蜕变的氧化锡和稳定的二氧化锡之间的成分变化
IF 2 4区 材料科学 Q3 MATERIALS SCIENCE, COATINGS & FILMS Pub Date : 2024-10-09 DOI: 10.1016/j.tsf.2024.140548
Yong-Lie Sun , Toshihide Nabatame , Jong Won Chung , Tomomi Sawada , Hiromi Miura , Manami Miyamoto , Kazuhito Tsukagoshi
p-Type tin(II) oxide (SnO (Sn2+)) formation using radiofrequency (RF) reactive magnetron sputtering and post-deposition annealing (PDA) processes was investigated. The as-grown SnOx film deposited from an SnOx (SnO:Sn = 60:40) target by RF sputtering at an oxygen partial pressure (PO2) of 0 Pa consisted of 2 % Sn (Sn0), 42 % Sn2+, and 56 % SnO2 (Sn4+). However, compared with the Sn2+ fraction observed after PDA under N2 and low-vacuum (∼1 Pa) conditions, that after PDA at 300 °C under high vacuum (< 5 × 10−4 Pa) (HVPDA) increased substantially to greater than 62 %. This result was attributed to the transformation from SnO2 to SnO during HVPDA. A staggered bottom-gate thin-film transistor with an SnO channel (10 nm), which was fabricated by HVPDA at 300 °C, exhibited p-type properties, including a relatively high on-current/off-current (Ion/Ioff) ratio of 5.1 × 104 and a hole field-effect mobility (µFE) of 1.8 cm2/(V·s).
利用射频(RF)反应磁控溅射和沉积后退火(PDA)工艺研究了 p 型锡(II)氧化物(SnO (Sn2+))的形成。在氧分压 (PO2) 为 0 Pa 的条件下,通过射频溅射从 SnOx(SnO:Sn = 60:40)靶材上沉积出的 SnOx 薄膜的原始生长状态包括 2 % 的 Sn (Sn0)、42 % 的 Sn2+ 和 56 % 的 SnO2 (Sn4+)。然而,与在 N2 和低真空(∼1 Pa)条件下进行 PDA 后观察到的 Sn2+ 部分相比,在 300 °C 高真空(< 5 × 10-4 Pa)条件下进行 PDA(HVPDA)后观察到的 Sn2+ 部分大幅增加,超过 62%。这一结果归因于在 HVPDA 期间从 SnO2 向 SnO 的转化。在 300 ℃ 下通过 HVPDA 制作的具有 SnO 沟道(10 nm)的交错底栅薄膜晶体管显示出 p 型特性,包括相对较高的导通/关断电流(Ion/Ioff)比(5.1 × 104)和 1.8 cm2/(V-s)的空穴场效应迁移率(µFE)。
{"title":"Compositional changes between metastable SnO and stable SnO2 in a sputtered film for p-type thin-film transistors","authors":"Yong-Lie Sun ,&nbsp;Toshihide Nabatame ,&nbsp;Jong Won Chung ,&nbsp;Tomomi Sawada ,&nbsp;Hiromi Miura ,&nbsp;Manami Miyamoto ,&nbsp;Kazuhito Tsukagoshi","doi":"10.1016/j.tsf.2024.140548","DOIUrl":"10.1016/j.tsf.2024.140548","url":null,"abstract":"<div><div>p-Type tin(II) oxide (SnO (Sn<sup>2+</sup>)) formation using radiofrequency (RF) reactive magnetron sputtering and post-deposition annealing (PDA) processes was investigated. The as-grown SnO<em><sub>x</sub></em> film deposited from an SnO<em><sub>x</sub></em> (SnO:Sn = 60:40) target by RF sputtering at an oxygen partial pressure (<em>P</em><sub>O2</sub>) of 0 Pa consisted of 2 % Sn (Sn<sup>0</sup>), 42 % Sn<sup>2+</sup>, and 56 % SnO<sub>2</sub> (Sn<sup>4+</sup>). However, compared with the Sn<sup>2+</sup> fraction observed after PDA under N<sub>2</sub> and low-vacuum (∼1 Pa) conditions, that after PDA at 300 °C under high vacuum (&lt; 5 × 10<sup>−4</sup> Pa) (HVPDA) increased substantially to greater than 62 %. This result was attributed to the transformation from SnO<sub>2</sub> to SnO during HVPDA. A staggered bottom-gate thin-film transistor with an SnO channel (10 nm), which was fabricated by HVPDA at 300 °C, exhibited p-type properties, including a relatively high on-current/off-current (<em>I</em><sub>on</sub>/<em>I</em><sub>off</sub>) ratio of 5.1 × 10<sup>4</sup> and a hole field-effect mobility (µ<sub>FE</sub>) of 1.8 cm<sup>2</sup>/(V·s).</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"807 ","pages":"Article 140548"},"PeriodicalIF":2.0,"publicationDate":"2024-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142434133","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The evolution of morphology and structure of spin-coated Zinc Acetate thin films and their impact on ZnO film morphology 旋涂醋酸锌薄膜的形貌和结构演变及其对氧化锌薄膜形貌的影响
IF 2 4区 材料科学 Q3 MATERIALS SCIENCE, COATINGS & FILMS Pub Date : 2024-10-09 DOI: 10.1016/j.tsf.2024.140540
B.R. Ilyassov , A.M. Alekseev , A.K. Abisheva , A.K. Zeinidenov , A.K. Aimukhanov
The deposition of ZnO thin films using sol-gel technology is a straight forward and widely used method for fabricating ZnO films with diverse morphologies and tunable electrical and optical properties. Notably, the preparation of ZnO compact layers from a zinc acetate and monoethanolamine (ZA:MEA) solution via spin-coating has gained popularity due to its simplicity. The pretreatment of spin-coated ZA:MEA films significantly impacts the morphology and structure of the resulting ZnO films. While the effects of preheating and its rate on ZnO precursor films have been extensively studied, the morphological and structural evolution of ZA:MEA films immediately after spin-coating and its subsequent impact on the final ZnO film have not been previously explored. In this study, we present the topography and phase composition of as-grown ZA:MEA films using atomic force microscopy (AFM). We conduct an in-situ investigation of the morphological evolution of ZA:MEA films. Our results reveal that as-grown ZA:MEA films possess an inhomogeneous structure. AFM phase image shows two distinct domains in the ZA:MEA films. Over time, we observe the growth of crystals in both vertical and perpendicular directions. ZA:MEA film aged for at least 20 h develops arrays of vertically oriented crystals throughout the film covered with sheet-like crystals forming on the film surface. This temporal evolution in the morphology and structure of ZA:MEA films significantly influences the morphology of the final ZnO film.
利用溶胶-凝胶技术沉积氧化锌薄膜是一种简单易行、应用广泛的方法,可用于制备具有不同形态和可调电气与光学特性的氧化锌薄膜。值得注意的是,通过旋涂法从醋酸锌和单乙醇胺(ZA:MEA)溶液中制备氧化锌致密层的方法因其简单易行而广受欢迎。旋涂ZA:MEA 薄膜的预处理会对生成的氧化锌薄膜的形态和结构产生重大影响。虽然预热及其速率对 ZnO 前驱体薄膜的影响已被广泛研究,但旋涂ZA:MEA 薄膜后立即进行的形态和结构演化及其对最终 ZnO 薄膜的后续影响尚未被探索。在本研究中,我们使用原子力显微镜 (AFM) 观察了生长后的 ZA:MEA 薄膜的形貌和相组成。我们对 ZA:MEA 薄膜的形态演变进行了原位研究。我们的研究结果表明,畸变生长的ZA:MEA薄膜具有不均匀结构。原子力显微镜相图显示了ZA:MEA 薄膜中两个不同的畴。随着时间的推移,我们观察到晶体在垂直和垂直两个方向上生长。老化至少 20 小时的ZA:MEA 薄膜在整个薄膜中形成垂直方向的晶体阵列,薄膜表面形成片状晶体。ZA:MEA薄膜形态和结构的这种时间演变极大地影响了最终氧化锌薄膜的形态。
{"title":"The evolution of morphology and structure of spin-coated Zinc Acetate thin films and their impact on ZnO film morphology","authors":"B.R. Ilyassov ,&nbsp;A.M. Alekseev ,&nbsp;A.K. Abisheva ,&nbsp;A.K. Zeinidenov ,&nbsp;A.K. Aimukhanov","doi":"10.1016/j.tsf.2024.140540","DOIUrl":"10.1016/j.tsf.2024.140540","url":null,"abstract":"<div><div>The deposition of ZnO thin films using sol-gel technology is a straight forward and widely used method for fabricating ZnO films with diverse morphologies and tunable electrical and optical properties. Notably, the preparation of ZnO compact layers from a zinc acetate and monoethanolamine (ZA:MEA) solution via spin-coating has gained popularity due to its simplicity. The pretreatment of spin-coated ZA:MEA films significantly impacts the morphology and structure of the resulting ZnO films. While the effects of preheating and its rate on ZnO precursor films have been extensively studied, the morphological and structural evolution of ZA:MEA films immediately after spin-coating and its subsequent impact on the final ZnO film have not been previously explored. In this study, we present the topography and phase composition of as-grown ZA:MEA films using atomic force microscopy (AFM). We conduct an in-situ investigation of the morphological evolution of ZA:MEA films. Our results reveal that as-grown ZA:MEA films possess an inhomogeneous structure. AFM phase image shows two distinct domains in the ZA:MEA films. Over time, we observe the growth of crystals in both vertical and perpendicular directions. ZA:MEA film aged for at least 20 h develops arrays of vertically oriented crystals throughout the film covered with sheet-like crystals forming on the film surface. This temporal evolution in the morphology and structure of ZA:MEA films significantly influences the morphology of the final ZnO film.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"807 ","pages":"Article 140540"},"PeriodicalIF":2.0,"publicationDate":"2024-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142434132","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Structural and morphological properties of CeO2 films deposited by radio frequency magnetron sputtering for back-end-of-line integration 用于后端集成的射频磁控溅射沉积 CeO2 薄膜的结构和形态特性
IF 2 4区 材料科学 Q3 MATERIALS SCIENCE, COATINGS & FILMS Pub Date : 2024-10-05 DOI: 10.1016/j.tsf.2024.140547
Ahsan Hayat , Markus Ratzke , Carlos Alvarado Chavarin , Marvin H. Zoellner , Agnieszka Anna Corley-Wiciak , Markus Andreas Schubert , Christian Wenger , Inga A. Fischer
Cerium oxides have potential applications ranging from low-temperature gas sensing to photodetection. A back-end-of-line integration of the material into complementary metal-oxide-semiconductor device fabrication processes has many advantages but places limits on material deposition, most notably the thermal budget for deposition and annealing. Here, we investigate thin cerium oxide films deposited by radio frequency (RF) magnetron sputtering at substrate temperatures of 300 °C and RF magnetron powers between 30 W and 70 W without any post-deposition annealing steps. Our investigation of the structural and morphological properties reveals a columnar texture of the thin films, and we find that the material is composed predominantly of CeO2 (111), with a large degree of crystallinity. We discuss implications for resistive gas sensing applications.
铈氧化物的潜在应用范围从低温气体传感到光电探测。将这种材料后端集成到互补金属氧化物半导体器件制造工艺中具有许多优势,但也对材料沉积造成了限制,其中最主要的是沉积和退火的热预算。在此,我们研究了通过射频(RF)磁控溅射沉积的氧化铈薄膜,该薄膜的基底温度为 300 °C,射频磁控功率为 30 W 至 70 W,无需任何沉积后退火步骤。我们对结构和形态特性的研究发现,薄膜具有柱状纹理,而且材料主要由 CeO2 (111) 组成,具有很高的结晶度。我们讨论了电阻式气体传感应用的意义。
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引用次数: 0
Hydrogen implantation in lanthanum thin films for ambient pressure hydride formation 在镧薄膜中进行氢植入以形成常压氢化物
IF 2 4区 材料科学 Q3 MATERIALS SCIENCE, COATINGS & FILMS Pub Date : 2024-10-05 DOI: 10.1016/j.tsf.2024.140546
Portia J. Allen, Simeon Gilbert, Michael P. Siegal, Ping Lu, Peter A. Sharma
Near room temperature superconductivity of metal superhydrides has been shown both theoretically and experimentally at high pressures (>100 GPa). Taking advantage of room temperature superconductivity for engineering applications requires decreasing the pressure of formation while retaining the superconducting hydride phase. We implanted lanthanum thin films with various doses of hydrogen ions at ambient pressure in order to form a lanthanum hydride phase. We found evidence for granular superconductivity below 5 K consistent with the phase coexistence of lanthanum hydride and lanthanum. As the H+ dose increased, TC decreased from 4.6 K to 3.2 K with broader superconducting transitions. Transmission electron microscopy showed increased substrate damage with increased ion dose and confirmed the granular structure of the films. Although a superhydride phase requires a higher H+ dose than what was attained in this work, we have demonstrated that ion implantation at ambient pressure is a feasible technique for superconducting lanthanum hydride formation.
在高压(100 GPa)下,金属超氢化物的近室温超导性已在理论和实验中得到证实。要在工程应用中利用室温超导性,就必须降低形成压力,同时保留超导氢化物相。我们在环境压力下用不同剂量的氢离子植入镧薄膜,以形成镧氢化物相。我们在 5 K 以下发现了颗粒状超导现象,这与氢化镧和镧相共存的现象一致。随着 H+ 剂量的增加,TC 从 4.6 K 下降到 3.2 K,超导跃迁范围更广。透射电子显微镜显示,随着离子剂量的增加,衬底的损伤也在增加,并证实了薄膜的颗粒结构。虽然超氢化物相需要的 H+ 剂量比这项研究中获得的更高,但我们已经证明,在常压下进行离子注入是形成超导氢化镧的可行技术。
{"title":"Hydrogen implantation in lanthanum thin films for ambient pressure hydride formation","authors":"Portia J. Allen,&nbsp;Simeon Gilbert,&nbsp;Michael P. Siegal,&nbsp;Ping Lu,&nbsp;Peter A. Sharma","doi":"10.1016/j.tsf.2024.140546","DOIUrl":"10.1016/j.tsf.2024.140546","url":null,"abstract":"<div><div>Near room temperature superconductivity of metal superhydrides has been shown both theoretically and experimentally at high pressures (<span><math><mrow><mo>&gt;</mo><mn>100</mn></mrow></math></span> GPa). Taking advantage of room temperature superconductivity for engineering applications requires decreasing the pressure of formation while retaining the superconducting hydride phase. We implanted lanthanum thin films with various doses of hydrogen ions at ambient pressure in order to form a lanthanum hydride phase. We found evidence for granular superconductivity below 5 K consistent with the phase coexistence of lanthanum hydride and lanthanum. As the H<span><math><msup><mrow></mrow><mrow><mo>+</mo></mrow></msup></math></span> dose increased, <span><math><msub><mrow><mi>T</mi></mrow><mrow><mi>C</mi></mrow></msub></math></span> decreased from 4.6 K to 3.2 K with broader superconducting transitions. Transmission electron microscopy showed increased substrate damage with increased ion dose and confirmed the granular structure of the films. Although a superhydride phase requires a higher H<span><math><msup><mrow></mrow><mrow><mo>+</mo></mrow></msup></math></span> dose than what was attained in this work, we have demonstrated that ion implantation at ambient pressure is a feasible technique for superconducting lanthanum hydride formation.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"807 ","pages":"Article 140546"},"PeriodicalIF":2.0,"publicationDate":"2024-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142437860","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Hard antireflection coatings with enhanced mechanical properties based on gradient structure 基于梯度结构的机械性能更强的硬抗反射涂层
IF 2 4区 材料科学 Q3 MATERIALS SCIENCE, COATINGS & FILMS Pub Date : 2024-09-29 DOI: 10.1016/j.tsf.2024.140545
Yusi Wang , Tingting Zheng , Pengyuan Wu , Chenying Yang , Oleksiy V. Penkov , Yujie Liu , Kaixin Yuan , Yan Cheng , Yueguang Zhang , Weidong Shen
Antireflection (AR) coatings with sapphire-like hardness are highly desired in various applications. Traditionally, hard AR coatings resist penetration, scratching, and abrasion by depositing a hard layer, such as silicon nitride (Si3N4), with a 1 to 2 µm thickness. However, thick Si3N4 thin films, fabricated by high-energy inductively coupled plasma assisted (ICP-assisted) sputtering, often introduce high residual stress, leading to severe buckling problems when the surface is scratched. To address these challenges, we employ a "Step up-step down" design method, integrating a hardness gradient structure with a series of SiOxNy films. This approach achieves high optical transmittance (Tave > 98.7 % at 420–720 nm), low residual stress (∼680 MPa), improved scratch resistance, and strong adhesion at the film-substrate interface (LC3 ∼180 mN). Our findings demonstrate significant potential for various mechanical and optical applications, including automotive and consumer electronics devices.
在各种应用中,具有蓝宝石般硬度的抗反射(AR)涂层都是非常需要的。传统上,硬质 AR 涂层通过沉积厚度为 1 到 2 µm 的氮化硅 (Si3N4) 等硬质层来抵抗穿透、划伤和磨损。然而,通过高能电感耦合等离子体辅助(ICP 辅助)溅射法制造的厚 Si3N4 薄膜往往会产生很高的残余应力,导致表面划伤时出现严重的屈曲问题。为了应对这些挑战,我们采用了 "逐步上升-逐步下降 "的设计方法,将硬度梯度结构与一系列 SiOxNy 薄膜结合在一起。这种方法实现了高透光率(Tave > 98.7 %,波长 420-720 nm)、低残余应力(∼680 MPa)、更好的抗划伤性以及薄膜与基底界面的强粘附性(LC3 ∼180 mN)。我们的研究结果表明,这种材料在汽车和消费电子设备等各种机械和光学应用领域具有巨大的潜力。
{"title":"Hard antireflection coatings with enhanced mechanical properties based on gradient structure","authors":"Yusi Wang ,&nbsp;Tingting Zheng ,&nbsp;Pengyuan Wu ,&nbsp;Chenying Yang ,&nbsp;Oleksiy V. Penkov ,&nbsp;Yujie Liu ,&nbsp;Kaixin Yuan ,&nbsp;Yan Cheng ,&nbsp;Yueguang Zhang ,&nbsp;Weidong Shen","doi":"10.1016/j.tsf.2024.140545","DOIUrl":"10.1016/j.tsf.2024.140545","url":null,"abstract":"<div><div>Antireflection (AR) coatings with sapphire-like hardness are highly desired in various applications. Traditionally, hard AR coatings resist penetration, scratching, and abrasion by depositing a hard layer, such as silicon nitride (Si<sub>3</sub>N<sub>4</sub>), with a 1 to 2 µm thickness. However, thick Si<sub>3</sub>N<sub>4</sub> thin films, fabricated by high-energy inductively coupled plasma assisted (ICP-assisted) sputtering, often introduce high residual stress, leading to severe buckling problems when the surface is scratched. To address these challenges, we employ a \"Step up-step down\" design method, integrating a hardness gradient structure with a series of SiO<sub>x</sub>N<sub>y</sub> films. This approach achieves high optical transmittance (Tave &gt; 98.7 % at 420–720 nm), low residual stress (∼680 MPa), improved scratch resistance, and strong adhesion at the film-substrate interface (L<sub>C3</sub> ∼180 mN). Our findings demonstrate significant potential for various mechanical and optical applications, including automotive and consumer electronics devices.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"807 ","pages":"Article 140545"},"PeriodicalIF":2.0,"publicationDate":"2024-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142423098","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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Thin Solid Films
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