Pub Date : 2025-09-23DOI: 10.1016/j.tsf.2025.140801
Sergey M. Kuzmin, Svetlana A. Chulovskaya, Vladimir I. Parfenyuk
This work demonstrates the preparation and modification of poly-Zn-5,10,15,20-tetrakis (4-hydroxyphenyl) porphyrin films under electrochemical conditions. The modification process was investigated using spectroscopic technique for the films deposited on fluorine-doped tin oxide glass electrodes and using an electrochemical techniques for the films deposited on glassy carbon. Changes in the spectral characteristics of the films at varying potential values are considered in terms of the integral intensity of Soret band components. It has been shown that at potentials of film oxidation or reduction <1.0 V, the spectral changes are reversible. At higher potentials, irreversible changes in the spectral characteristics of the film were observed, which were accompanied by a significant modification of its morphology, a decrease in the ohmic resistance of the film and an increase in the capacity of the double electric layer at the film/solution interface. A model explaining the formation of microrelief of the polyporphyrin film surface is proposed. It has been shown that the electrochemical modification of the film leads to a decrease in the onset potential and an increase in the current densities of the oxygen electroreduction reaction. The results showed that the electrochemical modification of the polyporphyrin films may be used for a sensor and/or catalyst design.
{"title":"Electrochemical modification of polyporphyrin films: Looking inside mechanism and possibilities","authors":"Sergey M. Kuzmin, Svetlana A. Chulovskaya, Vladimir I. Parfenyuk","doi":"10.1016/j.tsf.2025.140801","DOIUrl":"10.1016/j.tsf.2025.140801","url":null,"abstract":"<div><div>This work demonstrates the preparation and modification of poly-Zn-5,10,15,20-tetrakis (4-hydroxyphenyl) porphyrin films under electrochemical conditions. The modification process was investigated using spectroscopic technique for the films deposited on fluorine-doped tin oxide glass electrodes and using an electrochemical techniques for the films deposited on glassy carbon. Changes in the spectral characteristics of the films at varying potential values are considered in terms of the integral intensity of Soret band components. It has been shown that at potentials of film oxidation or reduction <1.0 V, the spectral changes are reversible. At higher potentials, irreversible changes in the spectral characteristics of the film were observed, which were accompanied by a significant modification of its morphology, a decrease in the ohmic resistance of the film and an increase in the capacity of the double electric layer at the film/solution interface. A model explaining the formation of microrelief of the polyporphyrin film surface is proposed. It has been shown that the electrochemical modification of the film leads to a decrease in the onset potential and an increase in the current densities of the oxygen electroreduction reaction. The results showed that the electrochemical modification of the polyporphyrin films may be used for a sensor and/or catalyst design.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"829 ","pages":"Article 140801"},"PeriodicalIF":2.0,"publicationDate":"2025-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145227731","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-09-22DOI: 10.1016/j.tsf.2025.140800
Jianbo Lu , Mengxia Mei , Chunlei Huang
Dust deposition on outdoor glass and photovoltaic panels presents a significant challenge, often requiring active cleaning methods to maintain daylighting, efficiency, and aesthetics. Therefore, highly transparent and hydrophobic coatings that enable passive self-cleaning of these surfaces are highly desirable. Polydimethylsiloxanes (PDMS) coatings hybridized with silicon dioxide (SiO2) nanoparticles have emerged as a promising solution. However, systematic studies on how hydrophobicity and transparency depend on nanoparticle properties were rarely reported, hindering practical implementation. In this study, we systematically investigated the hydrophobicity and optical transparency of PDMS coatings hybridized with different contents of SiO2 nanoparticles with various diameters. SiO2 nanoparticles with varying diameters were synthesized using the sol-gel method, followed by the development of PDMS coatings hybridized with SiO2 nanoparticles via spin coating technology. It is demonstrated that the PDMS coatings with larger SiO2 nanoparticles exhibited larger contact angles at low nanoparticle contents. At higher contents, the contact angles remained nearly constant, while transmittance decreased significantly owing to light scattering. Additionally, PDMS coatings hybridized with SiO2 nanoparticles exhibited good mechanical stability and self-cleaning properties, indicating their potential in outdoor applications. These findings provide valuable insights into optimizing PDMS-SiO2 hybrid coatings, balancing hydrophobicity and transparency.
{"title":"Influence of silicon dioxide nanoparticles on hydrophobicity and transparency of polydimethylsiloxanes coatings hybridized with silicon dioxide nanoparticles","authors":"Jianbo Lu , Mengxia Mei , Chunlei Huang","doi":"10.1016/j.tsf.2025.140800","DOIUrl":"10.1016/j.tsf.2025.140800","url":null,"abstract":"<div><div>Dust deposition on outdoor glass and photovoltaic panels presents a significant challenge, often requiring active cleaning methods to maintain daylighting, efficiency, and aesthetics. Therefore, highly transparent and hydrophobic coatings that enable passive self-cleaning of these surfaces are highly desirable. Polydimethylsiloxanes (PDMS) coatings hybridized with silicon dioxide (SiO2) nanoparticles have emerged as a promising solution. However, systematic studies on how hydrophobicity and transparency depend on nanoparticle properties were rarely reported, hindering practical implementation. In this study, we systematically investigated the hydrophobicity and optical transparency of PDMS coatings hybridized with different contents of SiO2 nanoparticles with various diameters. SiO2 nanoparticles with varying diameters were synthesized using the sol-gel method, followed by the development of PDMS coatings hybridized with SiO2 nanoparticles via spin coating technology. It is demonstrated that the PDMS coatings with larger SiO2 nanoparticles exhibited larger contact angles at low nanoparticle contents. At higher contents, the contact angles remained nearly constant, while transmittance decreased significantly owing to light scattering. Additionally, PDMS coatings hybridized with SiO2 nanoparticles exhibited good mechanical stability and self-cleaning properties, indicating their potential in outdoor applications. These findings provide valuable insights into optimizing PDMS-SiO2 hybrid coatings, balancing hydrophobicity and transparency.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"828 ","pages":"Article 140800"},"PeriodicalIF":2.0,"publicationDate":"2025-09-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145159085","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-09-19DOI: 10.1016/j.tsf.2025.140799
Lv Zhou , Hua Zheng , Jing-ao Shen , Shenghao Zhang , Huadan Li , Yuanrui Chen , Danmei Wei , Chenchen Wei , Tao Wu , Baohua Jia , Han Lin , Honglong Ning
Gallium oxide (Ga2O3) is an emerging semiconductor with an ultra-wide band gap of 4.8 eV. However, the preparation and property optimization of Ga2O3 thin films still face challenges, especially in terms of cost-effectiveness and process simplicity. This study used RF magnetron sputtering to deposit Ga2O3 films on amorphous glass substrates, showcasing excellent performance with the potential to substitute costlier substrates, while extensively examining their structural, optical, and photovoltaic characteristics. The as-grown Ga2O3 thin films were in an amorphous state while annealing the films in the air at 600 °C led to the formation of monoclinic structures. A systematic investigation was conducted into the impact of the Ar:O2 flux ratio on the properties of the films. Annealing amorphous Ga2O3 films at 500 °C resulted in an expanded band gap and enhanced transmittance in the ultraviolet range while maintaining the same Ar:O2 flux ratio. Although crystalline monoclinic Ga2O3 and amorphous Ga2O3 can be used to fabricate thin-film transistors, amorphous Ga2O3 exhibits superior thermal stability and requires a less demanding growth process. A dual-layer structure comprising indium-zinc-oxide and amorphous Ga2O3 was utilized as an active layer to thoroughly examine the transmission characteristics of thin-film transistors. Experimental results revealed that these transistors exhibit exceptional electrical characteristics, including a notable switching current ratio of approximately 108, a mobility of 32.3 cm²/Vs, and a subthreshold swing of 0.38 V/dec. These results indicate the feasibility of using Ga2O3 thin-film transistors in flat panel displays.
{"title":"Optimizing Ar:O2 flux ratio for enhanced growth and performance of gallium oxide films on glass substrates and thin film transistors","authors":"Lv Zhou , Hua Zheng , Jing-ao Shen , Shenghao Zhang , Huadan Li , Yuanrui Chen , Danmei Wei , Chenchen Wei , Tao Wu , Baohua Jia , Han Lin , Honglong Ning","doi":"10.1016/j.tsf.2025.140799","DOIUrl":"10.1016/j.tsf.2025.140799","url":null,"abstract":"<div><div>Gallium oxide (Ga<sub>2</sub>O<sub>3</sub>) is an emerging semiconductor with an ultra-wide band gap of 4.8 eV. However, the preparation and property optimization of Ga<sub>2</sub>O<sub>3</sub> thin films still face challenges, especially in terms of cost-effectiveness and process simplicity. This study used RF magnetron sputtering to deposit Ga<sub>2</sub>O<sub>3</sub> films on amorphous glass substrates, showcasing excellent performance with the potential to substitute costlier substrates, while extensively examining their structural, optical, and photovoltaic characteristics. The as-grown Ga<sub>2</sub>O<sub>3</sub> thin films were in an amorphous state while annealing the films in the air at 600 °C led to the formation of monoclinic structures. A systematic investigation was conducted into the impact of the Ar:O<sub>2</sub> flux ratio on the properties of the films. Annealing amorphous Ga<sub>2</sub>O<sub>3</sub> films at 500 °C resulted in an expanded band gap and enhanced transmittance in the ultraviolet range while maintaining the same Ar:O<sub>2</sub> flux ratio. Although crystalline monoclinic Ga<sub>2</sub>O<sub>3</sub> and amorphous Ga<sub>2</sub>O<sub>3</sub> can be used to fabricate thin-film transistors, amorphous Ga<sub>2</sub>O<sub>3</sub> exhibits superior thermal stability and requires a less demanding growth process. A dual-layer structure comprising indium-zinc-oxide and amorphous Ga<sub>2</sub>O<sub>3</sub> was utilized as an active layer to thoroughly examine the transmission characteristics of thin-film transistors. Experimental results revealed that these transistors exhibit exceptional electrical characteristics, including a notable switching current ratio of approximately 10<sup>8</sup>, a mobility of 32.3 cm²/Vs, and a subthreshold swing of 0.38 V/dec. These results indicate the feasibility of using Ga<sub>2</sub>O<sub>3</sub> thin-film transistors in flat panel displays.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"828 ","pages":"Article 140799"},"PeriodicalIF":2.0,"publicationDate":"2025-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145107798","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-09-17DOI: 10.1016/j.tsf.2025.140795
Abhay Singh Rajawat , Naim Ahmad , Risvana Nasril , Tasneem Sheikh , Mohammad Muhiuddin , Savita Sahu , Ashwani Gautam , Arvind Kumar , Md. Imteyaz Ahmad , G.A. Basheed , Mohammad R. Rahman , Waseem Akhtar
-Tungsten (-W), an A15 cubic phase of tungsten, exhibits a giant spin Hall angle compared to its bcc-phase -Tungsten (-W), making high-quality -W films desirable for spintronic applications. We report the controlled growth of -W films on SiO2/Si substrates via DC sputtering, where substrate bias serves as a critical factor in stabilizing the phase by regulating the energy of deposited atoms. This approach enables the formation of -W films over a wide thickness range. Power spectral density analysis of the atomic force microscopy images revealed that the -W film grown at a positive substrate bias of +50 V exhibits low surface roughness along with small grain size. Additionally, we studied the spin pumping phenomena in different tungsten phases achieved through substrate bias. Ferromagnetic resonance measurements reveal an enhancement in the magnetic damping for -W/Py compared to -W/Py dominated film. Importantly, the use of substrate bias does not deteriorate the interface quality, underscoring its effectiveness. These findings highlight the potential of substrate bias in thin-film engineering, paving the way for its advanced utilization in spintronic applications.
{"title":"Substrate-bias driven sputter deposited β-phase dominated tungsten film for spintronic applications","authors":"Abhay Singh Rajawat , Naim Ahmad , Risvana Nasril , Tasneem Sheikh , Mohammad Muhiuddin , Savita Sahu , Ashwani Gautam , Arvind Kumar , Md. Imteyaz Ahmad , G.A. Basheed , Mohammad R. Rahman , Waseem Akhtar","doi":"10.1016/j.tsf.2025.140795","DOIUrl":"10.1016/j.tsf.2025.140795","url":null,"abstract":"<div><div><span><math><mi>β</mi></math></span>-Tungsten (<span><math><mi>β</mi></math></span>-W), an A15 cubic phase of tungsten, exhibits a giant spin Hall angle compared to its bcc-phase <span><math><mi>α</mi></math></span>-Tungsten (<span><math><mi>α</mi></math></span>-W), making high-quality <span><math><mi>β</mi></math></span>-W films desirable for spintronic applications. We report the controlled growth of <span><math><mi>β</mi></math></span>-W films on SiO<sub>2</sub>/Si substrates via DC sputtering, where substrate bias serves as a critical factor in stabilizing the <span><math><mi>β</mi></math></span> phase by regulating the energy of deposited atoms. This approach enables the formation of <span><math><mi>β</mi></math></span>-W films over a wide thickness range. Power spectral density analysis of the atomic force microscopy images revealed that the <span><math><mi>β</mi></math></span>-W film grown at a positive substrate bias of +50 V exhibits low surface roughness along with small grain size. Additionally, we studied the spin pumping phenomena in different tungsten phases achieved through substrate bias. Ferromagnetic resonance measurements reveal an enhancement in the magnetic damping for <span><math><mi>β</mi></math></span>-W/Py compared to <span><math><mi>α</mi></math></span>-W/Py dominated film. Importantly, the use of substrate bias does not deteriorate the interface quality, underscoring its effectiveness. These findings highlight the potential of substrate bias in thin-film engineering, paving the way for its advanced utilization in spintronic applications.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"828 ","pages":"Article 140795"},"PeriodicalIF":2.0,"publicationDate":"2025-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145107799","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-09-12DOI: 10.1016/j.tsf.2025.140796
L. M. B. Vargas , M. J. da Silva , K. Bolaños , M. L. Peres , M. P. F. de Godoy , S. de Castro
This work studies the structural, morphological and electrical properties of a heterostructure, Zn0.05Cd0.95O/CdO, comparing them with the films that compose it, CdO and Zn0.05Cd0.95O, grown on glass substrate using the spray pyrolysis technique. The heterostructure presented higher crystalline and crystallite size compared to the separate films. The scanning electron microscopy (SEM) images revealed a well-defined interface, thus proving that the heterostructure was formed. In the electrical characterization, both films presented semiconductor-like behavior in resistance in the range of to , while the heterostructure presented this behavior up to and below this temperature a drop in the resistance was observed. This decrease is attributed to the presence of spin-orbit coupling (SOC) that was confirmed in the magnetoresistance (MR) measurements, with only the heterostructure presenting weak antilocalization (WAL) below 4.2 K. This effect was not observed in the individual films, suggesting that it is an intrinsic property of the interface due to the formation of a two-dimensional electron gas (2DEG). For the analysis of the SOC effect, the Hikami Larkin Nagaoka (HLN) model was used, which was fitted to the MR curve of the heterostructure only for the lowest temperature. The parameters obtained with this model were the phase coherence length and the spin-orbit scattering length at , indicating that this heterostructure may have application in the field of spintronics.
{"title":"Spin-orbit coupling in Zn0.05Cd0.95O/CdO heterostructures grown by spray pyrolysis","authors":"L. M. B. Vargas , M. J. da Silva , K. Bolaños , M. L. Peres , M. P. F. de Godoy , S. de Castro","doi":"10.1016/j.tsf.2025.140796","DOIUrl":"10.1016/j.tsf.2025.140796","url":null,"abstract":"<div><div>This work studies the structural, morphological and electrical properties of a heterostructure, Zn<sub>0.05</sub>Cd<sub>0.95</sub>O/CdO, comparing them with the films that compose it, CdO and Zn<sub>0.05</sub>Cd<sub>0.95</sub>O, grown on glass substrate using the spray pyrolysis technique. The heterostructure presented higher crystalline and crystallite size compared to the separate films. The scanning electron microscopy (SEM) images revealed a well-defined interface, thus proving that the heterostructure was formed. In the electrical characterization, both films presented semiconductor-like behavior in resistance in the range of <span><math><mrow><mn>100</mn><mspace></mspace><mi>K</mi></mrow></math></span> to <span><math><mrow><mn>1.9</mn><mspace></mspace><mi>K</mi></mrow></math></span>, while the heterostructure presented this behavior up to <span><math><mrow><mn>3.5</mn><mspace></mspace><mi>K</mi></mrow></math></span> and below this temperature a drop in the resistance was observed. This decrease is attributed to the presence of spin-orbit coupling (SOC) that was confirmed in the magnetoresistance (MR) measurements, with only the heterostructure presenting weak antilocalization (WAL) below 4.2 K. This effect was not observed in the individual films, suggesting that it is an intrinsic property of the interface due to the formation of a two-dimensional electron gas (2DEG). For the analysis of the SOC effect, the Hikami Larkin Nagaoka (HLN) model was used, which was fitted to the MR curve of the heterostructure only for the lowest temperature. The parameters obtained with this model were the phase coherence length <span><math><mrow><msub><mi>L</mi><mi>ϕ</mi></msub><mo>=</mo><mrow><mo>(</mo><mrow><mn>142.8</mn><mspace></mspace><mo>±</mo><mn>0.1</mn></mrow><mo>)</mo></mrow><mspace></mspace><mi>n</mi><mi>m</mi></mrow></math></span> and the spin-orbit scattering length <span><math><mrow><msub><mi>L</mi><mrow><mi>s</mi><mi>o</mi></mrow></msub><mo>=</mo><mrow><mo>(</mo><mrow><mn>232.2</mn><mspace></mspace><mo>±</mo><mn>0.1</mn></mrow><mo>)</mo></mrow><mspace></mspace><mi>n</mi><mi>m</mi></mrow></math></span> at <span><math><mrow><mi>T</mi><mo>=</mo><mn>1.9</mn><mspace></mspace><mi>K</mi></mrow></math></span>, indicating that this heterostructure may have application in the field of spintronics.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"828 ","pages":"Article 140796"},"PeriodicalIF":2.0,"publicationDate":"2025-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145097639","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-09-12DOI: 10.1016/j.tsf.2025.140797
Anil Kumar , S.S. Fouad , H. Atiya , Neeraj Mehta
This study investigates the impact of silver-halide salts (AgCl, AgBr, and AgI) on the optical, electrical, and photoelectrical properties of chalcogenide glass-ceramic thin films, replacing selenium content. Transmission and reflectance spectra were analysed to determine optical constants, bandgap (), and Urbach energy (Eₑ). The optical bandgap slightly decreased (0.1 eV) for AgCl-doped films but remained stable for AgBr and AgI, while the Urbach energy significantly increased. The refractive index (n) was obtained using Swanepoel’s method, and dielectric constants (ε' and ε") were calculated. The infinite dielectric constant (ε∞) increased from 2.45 (Se) to 3.33 (AgCl), 3.27 (AgBr), and 4.18 (AgI). The films exhibit indirect optical transitions with an optical bandgap of 1.77 to 1.89 eV, analysed using the Sellmeier and Wemple–DiDomenico (WDD) dispersion models. Further, we examined dissipation factor, energy loss functions, conductivities, relaxation time, and non-linear optical properties (n0, χ). The results highlight the potential tunability of AgX-doped chalcogenide thin films for optoelectronic applications.
{"title":"Optimization of linear and nonlinear optical parameters by silver halides incorporation in selenium-based thin films Se95(AgX)5","authors":"Anil Kumar , S.S. Fouad , H. Atiya , Neeraj Mehta","doi":"10.1016/j.tsf.2025.140797","DOIUrl":"10.1016/j.tsf.2025.140797","url":null,"abstract":"<div><div>This study investigates the impact of silver-halide salts (AgCl, AgBr, and AgI) on the optical, electrical, and photoelectrical properties of chalcogenide glass-ceramic thin films, replacing selenium content. Transmission and reflectance spectra were analysed to determine optical constants, bandgap (<span><math><msubsup><mi>E</mi><mi>g</mi><mrow><mi>o</mi><mi>p</mi><mi>t</mi></mrow></msubsup></math></span>), and Urbach energy (<em>Eₑ</em>). The optical bandgap slightly decreased (0.1 eV) for AgCl-doped films but remained stable for AgBr and AgI, while the Urbach energy significantly increased. The refractive index (<em>n</em>) was obtained using Swanepoel’s method, and dielectric constants (<em>ε'</em> and <em>ε\"</em>) were calculated. The infinite dielectric constant (<em>ε<sub>∞</sub></em>) increased from 2.45 (Se) to 3.33 (AgCl), 3.27 (AgBr), and 4.18 (AgI). The films exhibit indirect optical transitions with an optical bandgap of 1.77 to 1.89 eV, analysed using the Sellmeier and Wemple–DiDomenico (WDD) dispersion models. Further, we examined dissipation factor, energy loss functions, conductivities, relaxation time, and non-linear optical properties (<em>n<sub>0</sub>, χ</em>). The results highlight the potential tunability of AgX-doped chalcogenide thin films for optoelectronic applications.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"828 ","pages":"Article 140797"},"PeriodicalIF":2.0,"publicationDate":"2025-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145097637","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-09-11DOI: 10.1016/j.tsf.2025.140794
Larisa Naumova, Mikhail Milyaev, Roman Zavornitsyn, Ivan Yasyulevich, Nikolay Bebenin, Irina Maksimova, Tatiana Krinitsina, Timofey Novikov, Evgeny Patrakov, Vyacheslav Proglyado, Ivan Kamensky, Vladimir Ustinov
Thin platinum films were prepared by magnetron sputtering. It is found that when the field is along the current or perpendicular to both the current and the film plane, the magnetoresistance is positive while if the field is applied in the film plane perpendicular to the current, the magnetoresistance is negative. The temperature and thickness dependences of the positive and negative magnetoresistance are compared and the contribution due to the Hanle magnetoresistance is found. The thickness dependence of the Hanle magnetoresistance are analyzed within the framework of the theory of size effects in magnetoresistance caused by spin-orbit interaction. The value of the spin Hall angle in platinum is estimated.
{"title":"Spin accumulation effects in magnetoresistance of thin platinum films","authors":"Larisa Naumova, Mikhail Milyaev, Roman Zavornitsyn, Ivan Yasyulevich, Nikolay Bebenin, Irina Maksimova, Tatiana Krinitsina, Timofey Novikov, Evgeny Patrakov, Vyacheslav Proglyado, Ivan Kamensky, Vladimir Ustinov","doi":"10.1016/j.tsf.2025.140794","DOIUrl":"10.1016/j.tsf.2025.140794","url":null,"abstract":"<div><div>Thin platinum films were prepared by magnetron sputtering. It is found that when the field is along the current or perpendicular to both the current and the film plane, the magnetoresistance is positive while if the field is applied in the film plane perpendicular to the current, the magnetoresistance is negative. The temperature and thickness dependences of the positive and negative magnetoresistance are compared and the contribution due to the Hanle magnetoresistance is found. The thickness dependence of the Hanle magnetoresistance are analyzed within the framework of the theory of size effects in magnetoresistance caused by spin-orbit interaction. The value of the spin Hall angle in platinum is estimated.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"828 ","pages":"Article 140794"},"PeriodicalIF":2.0,"publicationDate":"2025-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145061379","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This study investigated the influence of oxygen content and Mg incorporation on the properties of Al-doped Indium Zinc Oxide (IZO:Al) and Al-doped Indium Zinc Magnesium Oxide (IZMO:Al) thin films deposited by radio-frequency sputtering. Increasing oxygen content during sputtering significantly reduced carrier concentration, leading to a redshift in the absorption edge and a narrowing of the optical band gap, primarily attributed to the dominance of the band gap renormalization effect vs the Burstein-Moss effect. Simultaneously, oxygen incorporation enhanced near-infrared transmittance. Mg incorporation initially improved carrier mobility but further increases led to decreased mobility and increased sheet resistance. These findings highlight the complex interplay between oxygen content and Mg incorporation, significantly influencing the electrical and optical properties of IZO:Al and IZMO:Al films. Optimizing these parameters is crucial for achieving a balance of high transparency, low resistivity, and suitable band alignment, essential for their application as transparent conductive oxides in high-efficiency semiconductor devices such as tandem solar cells.
{"title":"Investigation of the interplay of oxygen presence and Mg addition on InZnO:Al and InZnMgO:Al Thin Films","authors":"Takumi Yoneda , Dwinanri Egyna , Takayuki Negami , Takashi Minemoto","doi":"10.1016/j.tsf.2025.140793","DOIUrl":"10.1016/j.tsf.2025.140793","url":null,"abstract":"<div><div>This study investigated the influence of oxygen content and Mg incorporation on the properties of Al-doped Indium Zinc Oxide (IZO:Al) and Al-doped Indium Zinc Magnesium Oxide (IZMO:Al) thin films deposited by radio-frequency sputtering. Increasing oxygen content during sputtering significantly reduced carrier concentration, leading to a redshift in the absorption edge and a narrowing of the optical band gap, primarily attributed to the dominance of the band gap renormalization effect vs the Burstein-Moss effect. Simultaneously, oxygen incorporation enhanced near-infrared transmittance. Mg incorporation initially improved carrier mobility but further increases led to decreased mobility and increased sheet resistance. These findings highlight the complex interplay between oxygen content and Mg incorporation, significantly influencing the electrical and optical properties of IZO:Al and IZMO:Al films. Optimizing these parameters is crucial for achieving a balance of high transparency, low resistivity, and suitable band alignment, essential for their application as transparent conductive oxides in high-efficiency semiconductor devices such as tandem solar cells.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"828 ","pages":"Article 140793"},"PeriodicalIF":2.0,"publicationDate":"2025-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145061378","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-09-09DOI: 10.1016/j.tsf.2025.140791
Seung-Won Cho , Soon-Il Kwon , Sun-Woog Kim , Ji-Sun Lee , Sae-Hoon Kim , Jin-Ho Kim
Curved display cover windows are used to protect the display panel from external stimuli, which have gained attention in smart phone, monitor, and automotive industries in recent years. They require properties that can enhance the curved cover window such as scratch resistance, anti-fouling, transparency and so on. Thus, we report a simple method to fabricate an organic-inorganic hybrid coating film that can be applied to curved display cover window by the sol-gel process. This process has several advantages including low cost, low energy consumption, and easy coverage of large areas. The organic-inorganic hybrid coating solution was prepared by adding decyltrimethoxysilane (DTMS) and phenyl-trimethoxysilane (PTMS) to a solution synthesized based on metal alkoxide precursor (tetraethylsilcate (TEOS)) and alkoxy silanes (3-glycidoxypropyltrimethoxysilane (GPTMS)). The organic-inorganic hybrid all thin films fabricated on PMMA substrates by a dip coater showed high optical transparency of 92.0 to 93.3 % at 550 nm. In addition, the measured root mean square (RMS) roughness of the hybrid film was 2.18 nm or less. This indicates a very low surface roughness and confirms the fabrication of smooth films. Notably, the coating film with a TEOS:GPTMS:DTMS molar ratio of 1.0:0.1:0.1 coating film exhibited anti-fouling properties with high hydrophobicity of 95 ° water contact angle and 5H pencil hardness, which is expected to be coating film for application to the wide range of curved display industries.
{"title":"Fabrication of organic-inorganic hybrid thin films using sol-gel method to improve scratch resistance and anti-fouling of plastic substrates","authors":"Seung-Won Cho , Soon-Il Kwon , Sun-Woog Kim , Ji-Sun Lee , Sae-Hoon Kim , Jin-Ho Kim","doi":"10.1016/j.tsf.2025.140791","DOIUrl":"10.1016/j.tsf.2025.140791","url":null,"abstract":"<div><div>Curved display cover windows are used to protect the display panel from external stimuli, which have gained attention in smart phone, monitor, and automotive industries in recent years. They require properties that can enhance the curved cover window such as scratch resistance, anti-fouling, transparency and so on. Thus, we report a simple method to fabricate an organic-inorganic hybrid coating film that can be applied to curved display cover window by the sol-gel process. This process has several advantages including low cost, low energy consumption, and easy coverage of large areas. The organic-inorganic hybrid coating solution was prepared by adding decyltrimethoxysilane (DTMS) and phenyl-trimethoxysilane (PTMS) to a solution synthesized based on metal alkoxide precursor (tetraethylsilcate (TEOS)) and alkoxy silanes (3-glycidoxypropyltrimethoxysilane (GPTMS)). The organic-inorganic hybrid all thin films fabricated on PMMA substrates by a dip coater showed high optical transparency of 92.0 to 93.3 % at 550 nm. In addition, the measured root mean square (RMS) roughness of the hybrid film was 2.18 nm or less. This indicates a very low surface roughness and confirms the fabrication of smooth films. Notably, the coating film with a TEOS:GPTMS:DTMS molar ratio of 1.0:0.1:0.1 coating film exhibited anti-fouling properties with high hydrophobicity of 95 <sup>°</sup> water contact angle and 5H pencil hardness, which is expected to be coating film for application to the wide range of curved display industries.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"828 ","pages":"Article 140791"},"PeriodicalIF":2.0,"publicationDate":"2025-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145097638","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-09-09DOI: 10.1016/j.tsf.2025.140792
Yi-Yen Chen, Jun-Neng Zhan, Jau-Shiung Fang
Cobalt-ruthenium (Co(Ru)) alloy films with trace amount of Ru were synthesized on thermally oxidized silicon substrates via co-sputtering at 400 °C. Structural analyses confirmed the formation of fully miscible solid solutions in both hexagonal close-packed and face-centered cubic phases, with crystallinity significantly improved after annealing. All Co(Ru) films exhibited enhanced electrical reliability compared to pure Co, as evidenced by increased breakdown voltages. While resistivity increased slightly with higher Ru content due to solute-induced lattice distortion, the Co(Ru-1.28 at%) film achieved an optimal balance, exhibiting the lowest resistivity, excellent thermal stability, and a smooth, void-free surface after annealing at 700 °C. These findings indicate the dilute Ru incorporation as an effective strategy to enhance the structural integrity and electrical performance of Co-based thin films, highlighting Co(Ru) as a potential candidate for future interconnect applications in nanoscale semiconductor devices.
{"title":"Phase-coherent dilute ruthenium-enhanced cobalt films with improved thermal stability and breakdown strength for interconnect metallization","authors":"Yi-Yen Chen, Jun-Neng Zhan, Jau-Shiung Fang","doi":"10.1016/j.tsf.2025.140792","DOIUrl":"10.1016/j.tsf.2025.140792","url":null,"abstract":"<div><div>Cobalt-ruthenium (Co(Ru)) alloy films with trace amount of Ru were synthesized on thermally oxidized silicon substrates via co-sputtering at 400 °C. Structural analyses confirmed the formation of fully miscible solid solutions in both hexagonal close-packed and face-centered cubic phases, with crystallinity significantly improved after annealing. All Co(Ru) films exhibited enhanced electrical reliability compared to pure Co, as evidenced by increased breakdown voltages. While resistivity increased slightly with higher Ru content due to solute-induced lattice distortion, the Co(Ru-1.28 at%) film achieved an optimal balance, exhibiting the lowest resistivity, excellent thermal stability, and a smooth, void-free surface after annealing at 700 °C. These findings indicate the dilute Ru incorporation as an effective strategy to enhance the structural integrity and electrical performance of Co-based thin films, highlighting Co(Ru) as a potential candidate for future interconnect applications in nanoscale semiconductor devices.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"828 ","pages":"Article 140792"},"PeriodicalIF":2.0,"publicationDate":"2025-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145048502","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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