Thin Solid Films最新文献

英文中文

Analysis of the tribological behavior of diamond-like carbon coatings applied to AISI M2 high-speed steel

IF 2 4区材料科学 Q3 MATERIALS SCIENCE, COATINGS & FILMS

Thin Solid Films

Pub Date : 2025-02-09 DOI: 10.1016/j.tsf.2025.140622

Jorge Wanderson Barbosa , Paulo Sérgio Martins , Ernane Rodrigues da Silva , Elhadji Cheikh Talibouya Ba , Pedro Miraglia Firpe , Rubens Lucas de Freitas Filho , Soraia Sandra Pires , Pedro Américo Almeida Magalhães Júnior , André Barros de Mello Oliveira

Amorphous carbon coatings, known as Diamond-like Carbon (DLC), are thin coatings comprising amorphous carbon with sp² (graphite) and sp³ (diamond) bonds in varying proportions. These coatings are characterized by their high hardness and chemical inertness. Their application aims to effectively enhance the chemical, physical, and mechanical properties of conventional metals used as substrates, providing protection against abrasive and adhesive wear. The development of other DLC coatings is being studied for application under various conditions and on different non-ferrous metal alloys. This study proposes to evaluate and characterize DLC (Type A) and DLC with CrN interlayer (Type B) coatings using techniques such as Raman spectroscopy, X-ray Diffraction, Rockwell C adhesion test, and micro-abrasive wear test. Results showed that the total thickness of the Type B coating was approximately twice that of the Type A coating. Both showed a DLC layer of the a-C:H class. Comparing the crystallinity spectra, a higher level of amorphization was observed in the Type B DLC. In the adhesion test, classes HF2 and HF1, based on VDI 3198 standard, were assigned to the Type A and Type B coatings, respectively. Analyzing the cutting tools, changes in the surface texture on the rake face were observed, where the feed marks were completely covered when the Type B coating was applied. In the micro-abrasive wear test, it was found that the wear coefficients obtained with the coatings represented only 27 % of the value obtained on the high-speed steel substrate, which shows a difference of 63 % in the wear coefficient.

{"title":"Analysis of the tribological behavior of diamond-like carbon coatings applied to AISI M2 high-speed steel","authors":"Jorge Wanderson Barbosa , Paulo Sérgio Martins , Ernane Rodrigues da Silva , Elhadji Cheikh Talibouya Ba , Pedro Miraglia Firpe , Rubens Lucas de Freitas Filho , Soraia Sandra Pires , Pedro Américo Almeida Magalhães Júnior , André Barros de Mello Oliveira","doi":"10.1016/j.tsf.2025.140622","DOIUrl":"10.1016/j.tsf.2025.140622","url":null,"abstract":"<div><div>Amorphous carbon coatings, known as Diamond-like Carbon (DLC), are thin coatings comprising amorphous carbon with sp<sup>2</sup> (graphite) and sp<sup>3</sup> (diamond) bonds in varying proportions. These coatings are characterized by their high hardness and chemical inertness. Their application aims to effectively enhance the chemical, physical, and mechanical properties of conventional metals used as substrates, providing protection against abrasive and adhesive wear. The development of other DLC coatings is being studied for application under various conditions and on different non-ferrous metal alloys. This study proposes to evaluate and characterize DLC (Type A) and DLC with CrN interlayer (Type B) coatings using techniques such as Raman spectroscopy, X-ray Diffraction, Rockwell C adhesion test, and micro-abrasive wear test. Results showed that the total thickness of the Type B coating was approximately twice that of the Type A coating. Both showed a DLC layer of the a-C:H class. Comparing the crystallinity spectra, a higher level of amorphization was observed in the Type B DLC. In the adhesion test, classes HF2 and HF1, based on VDI 3198 standard, were assigned to the Type A and Type B coatings, respectively. Analyzing the cutting tools, changes in the surface texture on the rake face were observed, where the feed marks were completely covered when the Type B coating was applied. In the micro-abrasive wear test, it was found that the wear coefficients obtained with the coatings represented only 27 % of the value obtained on the high-speed steel substrate, which shows a difference of 63 % in the wear coefficient.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"813 ","pages":"Article 140622"},"PeriodicalIF":2.0,"publicationDate":"2025-02-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143388388","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Wafer-scale aluminium nitride nanostructures for solar-blind ultra-violet detection

IF 2 4区材料科学 Q3 MATERIALS SCIENCE, COATINGS & FILMS

Thin Solid Films

Pub Date : 2025-02-08 DOI: 10.1016/j.tsf.2025.140619

Wusi Zhang , Feijie Chen , Difei Xue , Chang Liu , Kai Peng , Chenlong Chen , Peiwen Lv

Ultra-wide bandgap semiconductor aluminum nitride (AlN) detectors have attracted much attention in recent years. As a next-generation semiconductor material, AlN crystals have shown advantages in many fields, attracting several teams to investigate preparation methods to prepare high-quality crystals. In this paper, Solar-blind photodetectors (SBPDs) based on metal-semiconductor-metal single-crystal AlN films were prepared by nitriding on c-plane sapphire using chemical vapor deposition (CVD). The prepared AlN SBPDs showed a responsivity of 11 mA/W, a fast-rising and falling response time, and a detective of 2.53 × 10¹¹ Jones. Nitriding through sapphire is a cost-effective way to grow AlN at high temperatures and can grow wafer-scale AlN, demonstrating the advantages of AlN growth.

引用次数: 0

Molybdenum nitride thin films synthesized by microwave electron cyclotron resonance – Assisted reactive pulsed laser deposition

IF 2 4区材料科学 Q3 MATERIALS SCIENCE, COATINGS & FILMS

Thin Solid Films

Pub Date : 2025-02-07 DOI: 10.1016/j.tsf.2025.140621

Enrique Camps , E. Campos-González , C. Rivera-Rodríguez , G. Quiñones-Galván , A. Conde-Gallardo

Molybdenum nitride thin films were deposited using a hybrid plasma system. This system results from the combination of a stationary continuous plasma, created by a microwave electron cyclotron resonance discharge in nitrogen atmosphere and a pulsed plasma produced by the laser ablation of a molybdenum metallic target. The plasma parameters were measured by Langmuir probes, and the type of chemically excited species were detected by optical emission spectroscopy. The results indicate that the hybrid plasma is more efficient than the laser ablation or microwave discharge processes alone. X-ray diffraction showed the presence of the δ-MoN (hexagonal) phase with a preferred orientation that changes depending on the experimental conditions. Films deposited using the laser ablation process without the presence of the microwave plasma were mainly composed by metallic molybdenum, as seen by X-Ray Diffraction. X-ray photoelectron spectra measurements showed that the nitrogen content in the samples grown by the hybrid plasma process is significantly higher than in those grown with the conventional laser ablation process. The hardness values of the MoN films grown by the hybrid system increased from 19 to 24 GPa as a function of the mean kinetic energy of the ions formed in the laser ablation plasma. All the films show superconductivity, with a Tc-onset from 5.1 to 7.2 K, depending on the nitrogen content.

{"title":"Molybdenum nitride thin films synthesized by microwave electron cyclotron resonance – Assisted reactive pulsed laser deposition","authors":"Enrique Camps , E. Campos-González , C. Rivera-Rodríguez , G. Quiñones-Galván , A. Conde-Gallardo","doi":"10.1016/j.tsf.2025.140621","DOIUrl":"10.1016/j.tsf.2025.140621","url":null,"abstract":"<div><div>Molybdenum nitride thin films were deposited using a hybrid plasma system. This system results from the combination of a stationary continuous plasma, created by a microwave electron cyclotron resonance discharge in nitrogen atmosphere and a pulsed plasma produced by the laser ablation of a molybdenum metallic target. The plasma parameters were measured by Langmuir probes, and the type of chemically excited species were detected by optical emission spectroscopy. The results indicate that the hybrid plasma is more efficient than the laser ablation or microwave discharge processes alone. X-ray diffraction showed the presence of the δ-MoN (hexagonal) phase with a preferred orientation that changes depending on the experimental conditions. Films deposited using the laser ablation process without the presence of the microwave plasma were mainly composed by metallic molybdenum, as seen by X-Ray Diffraction. X-ray photoelectron spectra measurements showed that the nitrogen content in the samples grown by the hybrid plasma process is significantly higher than in those grown with the conventional laser ablation process. The hardness values of the MoN films grown by the hybrid system increased from 19 to 24 GPa as a function of the mean kinetic energy of the ions formed in the laser ablation plasma. All the films show superconductivity, with a Tc-onset from 5.1 to 7.2 K, depending on the nitrogen content.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"813 ","pages":"Article 140621"},"PeriodicalIF":2.0,"publicationDate":"2025-02-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143377459","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

SiC thin films: Nanosecond pulsed laser-deposition via Digital Twin approach and atom probe tomography characterizations

IF 2 4区材料科学 Q3 MATERIALS SCIENCE, COATINGS & FILMS

Thin Solid Films

Pub Date : 2025-02-05 DOI: 10.1016/j.tsf.2025.140620

H G Prashantha Kumar , Sree Harsha Choutapalli , Nilesh J Vasa , Tiju thomas , Srinivasa Rao Bakshi

This research presents the synthesis of silicon carbide (SiC) thin films using a nanosecond pulsed laser deposition method, combined with a Level -2 Digital Twin approach for real-time process optimization. Various target precursors were employed to fabricate SiC thin films, and the influence of these precursors on the material properties was investigated. The Digital Twin model provided dynamic real-time feedback, allowing precise control over the deposition parameters, improving consistency and identical windows throughout. Such deposited thin film exhibited an average surface roughness (Ra) and nanoindentation hardness measured in the range of 2 nm to 5 nm and range of 32 to 41 GPa for the SiC thin film respectively. Transmission Electron Microscopic (TEM) characterisations on lamellar thin film specimens revealed 558.9 ± 10 nm and 593.62 ± 10 nm thick film deposition for Spark Plasma Sintered (SPS) and Reaction Bonded (RB) SiC thin films followed by average of Si ∼ 50 at. %, C ∼ 48. at. % with the traces of O ∼ 0.43 at.% elemental composition distributions for both films analysed through Atom Probe Tomography (APT) reconstructions and reveals the impurities concentrations aluminium (Al), Nitrogen (N), Vanadium (V) & Potassium (P) in both films with additional B at.% elements in reaction bonded SiC alone. Further, the impact of laser irradiation was witnessed in terms of change in resistance values attributed to laser assist activation of inherited and substitutional impurities in thin films with a scale of respective impurity concentrations.

{"title":"SiC thin films: Nanosecond pulsed laser-deposition via Digital Twin approach and atom probe tomography characterizations","authors":"H G Prashantha Kumar , Sree Harsha Choutapalli , Nilesh J Vasa , Tiju thomas , Srinivasa Rao Bakshi","doi":"10.1016/j.tsf.2025.140620","DOIUrl":"10.1016/j.tsf.2025.140620","url":null,"abstract":"<div><div>This research presents the synthesis of silicon carbide (SiC) thin films using a nanosecond pulsed laser deposition method, combined with a Level -2 Digital Twin approach for real-time process optimization. Various target precursors were employed to fabricate SiC thin films, and the influence of these precursors on the material properties was investigated. The Digital Twin model provided dynamic real-time feedback, allowing precise control over the deposition parameters, improving consistency and identical windows throughout. Such deposited thin film exhibited an average surface roughness (Ra) and nanoindentation hardness measured in the range of 2 nm to 5 nm and range of 32 to 41 GPa for the SiC thin film respectively. Transmission Electron Microscopic (TEM) characterisations on lamellar thin film specimens revealed 558.9 ± 10 nm and 593.62 ± 10 nm thick film deposition for Spark Plasma Sintered (SPS) and Reaction Bonded (RB) SiC thin films followed by average of Si ∼ 50 at. %, C ∼ 48. at. % with the traces of O ∼ 0.43 at.% elemental composition distributions for both films analysed through Atom Probe Tomography (APT) reconstructions and reveals the impurities concentrations aluminium (Al), Nitrogen (N), Vanadium (V) & Potassium (P) in both films with additional B at.% elements in reaction bonded SiC alone. Further, the impact of laser irradiation was witnessed in terms of change in resistance values attributed to laser assist activation of inherited and substitutional impurities in thin films with a scale of respective impurity concentrations.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"813 ","pages":"Article 140620"},"PeriodicalIF":2.0,"publicationDate":"2025-02-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143351382","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Investigation of wettability and antimicrobial activity of Ti-Cu and Ti-Ag thin film metallic glasses coated on the surface of 316L, CoCrW, Ti6Al4V alloy substrates produced by selective laser melting

IF 2 4区材料科学 Q3 MATERIALS SCIENCE, COATINGS & FILMS

Thin Solid Films

Pub Date : 2025-02-01 DOI: 10.1016/j.tsf.2025.140605

Çetin Çimen , Mehmet Karakan , Didem Özgür , Ezgi Pelin Yıldız

This study includes examining the production of 316 L, CoCrW and Ti6Al4 V base materials using the selective laser melting method and investigating the properties of Ti-Cu and Ti-Ag thin film metallic glasses (TFMG) coated on the surfaces of these samples. Ti-Cu and Ti-Ag coatings were prepared by co-sputtering Ti-Cu and Ti-Ag targets in Argon gas plasma. Characterization of TFMG is focused on examining surface microstructure and physicochemical properties. Optical profilometry, X-ray Diffraction, Scanning Electron Microscopy, Energy Dispersive X-ray Spectroscopy and Atomic Force Microscopy analyzes were performed to determine structural features. Wettability and antimicrobial activity were also evaluated. The results demonstrated that Ti-Cu coatings, with a water contact angle ranging from 27.6° to 30.31°, and Ti-Ag coatings, with a contact angle between 7.62° and 9.68°, exhibit hydrophilic surfaces. Furthermore, they show high antimicrobial activity against various bacterial species, consistent with previous studies. However, variations in effect were observed among yeast strains, with Candida non-albicans species showing greater resistance due to their biofilm formation and resistance to metal ions. In contrast, Ti-Cu and Ti-Ag coatings displayed strong antifungal activity against Candida albicans, indicating potential suitability for clinical applications such as catheters and surgical implants. Despite their high antimicrobial efficacy, the limited effects on certain microorganisms underscore the need for more comprehensive evaluations under various conditions and long-term in vivo studies.

{"title":"Investigation of wettability and antimicrobial activity of Ti-Cu and Ti-Ag thin film metallic glasses coated on the surface of 316L, CoCrW, Ti6Al4V alloy substrates produced by selective laser melting","authors":"Çetin Çimen , Mehmet Karakan , Didem Özgür , Ezgi Pelin Yıldız","doi":"10.1016/j.tsf.2025.140605","DOIUrl":"10.1016/j.tsf.2025.140605","url":null,"abstract":"<div><div>This study includes examining the production of 316 L, CoCrW and Ti6Al4 V base materials using the selective laser melting method and investigating the properties of Ti-Cu and Ti-Ag thin film metallic glasses (TFMG) coated on the surfaces of these samples. Ti-Cu and Ti-Ag coatings were prepared by co-sputtering Ti-Cu and Ti-Ag targets in Argon gas plasma. Characterization of TFMG is focused on examining surface microstructure and physicochemical properties. Optical profilometry, X-ray Diffraction, Scanning Electron Microscopy, Energy Dispersive X-ray Spectroscopy and Atomic Force Microscopy analyzes were performed to determine structural features. Wettability and antimicrobial activity were also evaluated. The results demonstrated that Ti-Cu coatings, with a water contact angle ranging from 27.6° to 30.31°, and Ti-Ag coatings, with a contact angle between 7.62° and 9.68°, exhibit hydrophilic surfaces. Furthermore, they show high antimicrobial activity against various bacterial species, consistent with previous studies. However, variations in effect were observed among yeast strains, with <em>Candida non-albicans</em> species showing greater resistance due to their biofilm formation and resistance to metal ions. In contrast, Ti-Cu and Ti-Ag coatings displayed strong antifungal activity against <em>Candida albicans</em>, indicating potential suitability for clinical applications such as catheters and surgical implants. Despite their high antimicrobial efficacy, the limited effects on certain microorganisms underscore the need for more comprehensive evaluations under various conditions and long-term in vivo studies.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"811 ","pages":"Article 140605"},"PeriodicalIF":2.0,"publicationDate":"2025-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143154236","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Interface defect and charge carrier transport properties in substrate-dependent p-type tunnel oxide passivated contact layers

IF 2 4区材料科学 Q3 MATERIALS SCIENCE, COATINGS & FILMS

Thin Solid Films

Pub Date : 2025-02-01 DOI: 10.1016/j.tsf.2025.140604

Dohyung Kim , Yong-Jin Kim , Minwoo Lee , Kyuhyeon Im , June Sung Park , Munse Kim , Sang Hee Lee , Jae Sung Yun , Yunae Cho , Kyung Taek Jeong , Sungeun Park , Min Gu Kang , Hee-eun Song

Most tunnel oxide passivated contact (TOPCon) solar cells are based on a phosphorus-doped (n-type) Si wafer owing to its lifetime stability and defect tolerance compared to a boron-doped (p-type) Si wafer. A gallium-doped (p-type) Si wafer has been adopted due to its better stability under illumination and is now a mainstream for the passivated emitter and rear cell. To use the existing facilities and reduce the cost in the solar industries, it is important to understand the charge carrier transport properties and underlying mechanisms considering p-type TOPCon solar cells as potential candidates for industrial applications. Here, we investigate the correlation between charge transport properties and defect distributions on p⁺ poly-Si layers/SiO_x/two different p-type Si wafers, doped with boron and gallium, respectively. SiO_x and p⁺ poly-Si layers have been fabricated by in-situ low pressure chemical vapor deposition. Then, we perform carrier lifetime measurements using quasi-steady state photoconductance to quantify bulk and surface carrier lifetime. The electrochemical capacitance-voltage method is utilized to investigate the doping levels and profiles by measuring the active boron concentration. Furthermore, Kelvin probe force microscopy measurements are conducted to examine the local photovoltage and defect states on the film surfaces. We also perform current-voltage measurements to analyze the current behavior under both dark and light illumination conditions. Our findings uncover defects dependent on Si wafer types and variations in charge carrier dynamics within p+ poly-Si layers/SiO_x/p-type Si wafers. This study enhances our comprehension of charge carrier transport properties in p-type Si wafers, facilitating advancements in photovoltaic performance for p-TOPCon solar cells.

{"title":"Interface defect and charge carrier transport properties in substrate-dependent p-type tunnel oxide passivated contact layers","authors":"Dohyung Kim , Yong-Jin Kim , Minwoo Lee , Kyuhyeon Im , June Sung Park , Munse Kim , Sang Hee Lee , Jae Sung Yun , Yunae Cho , Kyung Taek Jeong , Sungeun Park , Min Gu Kang , Hee-eun Song","doi":"10.1016/j.tsf.2025.140604","DOIUrl":"10.1016/j.tsf.2025.140604","url":null,"abstract":"<div><div>Most tunnel oxide passivated contact (TOPCon) solar cells are based on a phosphorus-doped (n-type) Si wafer owing to its lifetime stability and defect tolerance compared to a boron-doped (p-type) Si wafer. A gallium-doped (p-type) Si wafer has been adopted due to its better stability under illumination and is now a mainstream for the passivated emitter and rear cell. To use the existing facilities and reduce the cost in the solar industries, it is important to understand the charge carrier transport properties and underlying mechanisms considering p-type TOPCon solar cells as potential candidates for industrial applications. Here, we investigate the correlation between charge transport properties and defect distributions on <em>p</em><sup>+</sup> poly-Si layers/SiO<em><sub>x</sub></em>/two different p-type Si wafers, doped with boron and gallium, respectively. SiO<em><sub>x</sub></em> and <em>p</em><sup>+</sup> poly-Si layers have been fabricated by in-situ low pressure chemical vapor deposition. Then, we perform carrier lifetime measurements using quasi-steady state photoconductance to quantify bulk and surface carrier lifetime. The electrochemical capacitance-voltage method is utilized to investigate the doping levels and profiles by measuring the active boron concentration. Furthermore, Kelvin probe force microscopy measurements are conducted to examine the local photovoltage and defect states on the film surfaces. We also perform current-voltage measurements to analyze the current behavior under both dark and light illumination conditions. Our findings uncover defects dependent on Si wafer types and variations in charge carrier dynamics within <em>p</em>+ poly-Si layers/SiO<em><sub>x</sub></em>/p-type Si wafers. This study enhances our comprehension of charge carrier transport properties in p-type Si wafers, facilitating advancements in photovoltaic performance for p-TOPCon solar cells.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"811 ","pages":"Article 140604"},"PeriodicalIF":2.0,"publicationDate":"2025-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143154239","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Revealing plasmonic TiN films with low power radio-frequency magnetron sputtering technique

IF 2 4区材料科学 Q3 MATERIALS SCIENCE, COATINGS & FILMS

Thin Solid Films

Pub Date : 2025-02-01 DOI: 10.1016/j.tsf.2025.140603

Atanu Samanta , Ananya Chattaraj , Sachin Srivastava , Lukasz Walczak , Archna Sagdeo , Aloke Kanjilal

Growth of plasmonic titanium nitride (TiN) film has recently attracted a considerable interest for various applications ranging from biosensing to optoelectronic devices. A room temperature deposition of high-quality TiN films by radio-frequency magnetron sputtering method with 60 W power is presented. Synchrotron based X-ray diffraction confirms the cubic phase formation in these films, while X-ray photoelectron spectroscopy (XPS) supports the existence of Ti-N bonds along with the presence of TiN_xO_y. Atomic force microscopy and scanning electron microscopy further suggest the development of a smooth surface. Optical characterisations by ellipsometry and ultraviolet-visible spectroscopy together establish the plasmonic behaviour of TiN films. A substantial negative value in the real component of the dielectric function is determined, where the partially filled Ti-3d orbitals near the Fermi level is evidenced from the valence band XPS analysis. The observed results therefore confirm that the plasmonic behaviour of the present TiN films is auspicious for (opto)electronic applications.

{"title":"Revealing plasmonic TiN films with low power radio-frequency magnetron sputtering technique","authors":"Atanu Samanta , Ananya Chattaraj , Sachin Srivastava , Lukasz Walczak , Archna Sagdeo , Aloke Kanjilal","doi":"10.1016/j.tsf.2025.140603","DOIUrl":"10.1016/j.tsf.2025.140603","url":null,"abstract":"<div><div>Growth of plasmonic titanium nitride (TiN) film has recently attracted a considerable interest for various applications ranging from biosensing to optoelectronic devices. A room temperature deposition of high-quality TiN films by radio-frequency magnetron sputtering method with 60 W power is presented. Synchrotron based X-ray diffraction confirms the cubic phase formation in these films, while X-ray photoelectron spectroscopy (XPS) supports the existence of Ti-N bonds along with the presence of TiN<sub>x</sub>O<sub>y</sub>. Atomic force microscopy and scanning electron microscopy further suggest the development of a smooth surface. Optical characterisations by ellipsometry and ultraviolet-visible spectroscopy together establish the plasmonic behaviour of TiN films. A substantial negative value in the real component of the dielectric function is determined, where the partially filled Ti-3<em>d</em> orbitals near the Fermi level is evidenced from the valence band XPS analysis. The observed results therefore confirm that the plasmonic behaviour of the present TiN films is auspicious for (opto)electronic applications.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"811 ","pages":"Article 140603"},"PeriodicalIF":2.0,"publicationDate":"2025-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143154235","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Dense Al2O3 films prepared by high power impulse magnetron sputtering at pulsed kV bias

IF 2 4区材料科学 Q3 MATERIALS SCIENCE, COATINGS & FILMS

Thin Solid Films

Pub Date : 2025-02-01 DOI: 10.1016/j.tsf.2025.140611

Dongjie Yang , Yaoyao Liu , Xiang Zhang , Shusheng Chen , Xiaowei Wang , Yu Liao , Xiaokai An , Yanfei Zhao , Lingjie Chen , Suihan Cui , Liangliang Liu , Ricky K Y Fu , Paul K Chu , Zhongzhen Wu

Al₂O₃ films are often used in electronic and other devices for surface protection due to their excellent insulating and mechanical properties, but these properties depend on the film density. Conventional magnetron sputtering used industrially to deposit Al₂O₃ films faces challenges in density regulation, and many Al₂O₃ coatings have poor densities. Herein, negative kV biases are applied to the substrate in high-power impulse magnetron sputtering (HiPIMS) to produce the desirable high-energy ions to densify the Al₂O₃ films. Our results indicate that the high pulsed bias also mitigates arcing during the deposition of insulating alumina films. By increasing the pulsed voltage, the film density increases, resulting in higher optical transparency, better insulating and mechanical properties, as well as superior corrosion resistance.

{"title":"Dense Al2O3 films prepared by high power impulse magnetron sputtering at pulsed kV bias","authors":"Dongjie Yang , Yaoyao Liu , Xiang Zhang , Shusheng Chen , Xiaowei Wang , Yu Liao , Xiaokai An , Yanfei Zhao , Lingjie Chen , Suihan Cui , Liangliang Liu , Ricky K Y Fu , Paul K Chu , Zhongzhen Wu","doi":"10.1016/j.tsf.2025.140611","DOIUrl":"10.1016/j.tsf.2025.140611","url":null,"abstract":"<div><div>Al<sub>2</sub>O<sub>3</sub> films are often used in electronic and other devices for surface protection due to their excellent insulating and mechanical properties, but these properties depend on the film density. Conventional magnetron sputtering used industrially to deposit Al<sub>2</sub>O<sub>3</sub> films faces challenges in density regulation, and many Al<sub>2</sub>O<sub>3</sub> coatings have poor densities. Herein, negative kV biases are applied to the substrate in high-power impulse magnetron sputtering (HiPIMS) to produce the desirable high-energy ions to densify the Al<sub>2</sub>O<sub>3</sub> films. Our results indicate that the high pulsed bias also mitigates arcing during the deposition of insulating alumina films. By increasing the pulsed voltage, the film density increases, resulting in higher optical transparency, better insulating and mechanical properties, as well as superior corrosion resistance.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"811 ","pages":"Article 140611"},"PeriodicalIF":2.0,"publicationDate":"2025-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143154237","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Understanding grain growth and grain boundary inversion in CdS thin films by CdI2 activation

IF 2 4区材料科学 Q3 MATERIALS SCIENCE, COATINGS & FILMS

Thin Solid Films

Pub Date : 2025-02-01 DOI: 10.1016/j.tsf.2024.140593

Suman Kumari , G. Chasta , D. Suthar , Himanshu , N. Kumari , M.S. Dhaka

The post deposition halide treatment to Cadmium (Cd) based solar cell devices is recognized as vital step for passivation of grain boundaries and influences the performance parameters drastically. In view of these facts, herein, a concise investigation on the impact of post-deposition Cadmium iodide (CdI₂) treatment on the physical properties of thermally evaporated Cadmium sulfide (CdS) films is carried out at 100 °C, 200 °C and 300 °C temperature. The structural, electrical, optical and topographical properties are explored by using characterization tools concerned. The crystallographic results reveal that the films are polycrystalline in nature having mixed hexagonal (wurtzite) and cubic (zinc blende) phases and preferentially oriented along (220) cubic plane. Augmentation in crystallite size of CdS films from 34 nm to 41 nm is observed with CdI₂ treatment where optical energy band gap is tuned in 2.33–2.39 eV range with treatment temperature. The broad photoluminescence emission peak is achieved for all the CdS films in the spectral range of 660–710 nm which is associated to red emission band where intensity of peak is continuously enhanced with temperature. The electrical study shows Ohmic nature of the as grown and CdI₂ treated CdS films where conductivity is lessened for treated films as compared to the as grown films. Surface topographical analysis reveals to formation of almost nanospherical grains having variable size at different activation temperature. The transmittance of >75 % beyond 600 nm wavelength is observed for CdS films activated at 300 °C. The findings revealed that CdS films treated at 300 °C are suitable to use as window layer in fabrication of Cd based thin film solar cells.

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引用次数: 0

Nickel-plated melamine sponges for versatile applications in flame resistance, electromagnetic absorption and advanced sensing

IF 2 4区材料科学 Q3 MATERIALS SCIENCE, COATINGS & FILMS

Thin Solid Films

Pub Date : 2025-02-01 DOI: 10.1016/j.tsf.2025.140617

Shanshan Duan , Hua Meng , Guanda Yang , Dirk W. Schubert

In this study, nickel-plated melamine sponge composites were prepared via a simple autocatalytic deposition for potential applications in flame resistance, electromagnetic absorption, and strain/pressure sensing. Commercial melamine foams were used as the base material, and nickel plating was achieved through a controllable process involving sensitizing, activating, and autocatalytic plating steps. The obtained Ni@Sponge composites were characterized using scanning electron microscopy (SEM), Fourier transform infrared spectroscopy (FTIR), and thermal gravimetric analysis (TGA) to collect the structure and thermal information. SEM images reveal uniform nickel distribution on the surface of the Ni@Sponge-High skeleton without significant structural deformation. Energy dispersive X-ray spectrometer (EDS) and FTIR analysis results confirm the nickel deposition, while TGA indicates enhanced thermal stability in the nickel-plated composite samples. Flame resistance tests demonstrate improved fire retardancy in the nickel-plated samples compared to that of the original sponge. Moreover, excellent electromagnetic absorption and strain/pressure sensing capabilities of Ni@Sponge-High based electronic sensors were observed, showcasing the potential applications of the composites in future human-machine interaction and artificial intelligence fields.

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引用次数: 0

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