Thin Solid Films最新文献_第2页

Glancing angle deposition of TiO2 vertical nanopillars on poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) with enhanced optical and charge transfer characteristics TiO2垂直纳米柱在聚（3,4-乙烯二氧噻吩）上的掠角沉积：具有增强光学和电荷转移特性的聚（苯乙烯磺酸盐）

IF 2 4区材料科学 Q3 MATERIALS SCIENCE, COATINGS & FILMS

Thin Solid Films

Pub Date : 2026-01-15 DOI: 10.1016/j.tsf.2026.140856

Salam Jimkeli Singh , Lanusubo Walling , P. Chinnamuthu , Asit Kumar Kar

The integration of inorganic-organic hybrid heterostructures offers a promising route toward efficient optoelectronic devices by combining the complementary properties of wide-band-gap semiconductors and conducting polymers. Herein, we report for the first time the direct growth of vertically aligned anatase TiO₂ nanopillars on electrodeposited poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) thin films using glancing angle deposition (GLAD) at substrate temperatures below 70 °C. This controlled temperature approach preserves the structural integrity of PEDOT:PSS while enabling nanopillar crystallisation. The comprehensive structural, chemical, optical, and photophysical characterisation confirms the successful formation of TiO₂/PEDOT:PSS heterostructures. The Raman analysis reveals intensity redistribution and a red shift of characteristic polymer peaks, indicating strong polymer-oxide coupling. The UV–Vis spectroscopy demonstrates enhanced light absorption and reduced band gaps (3.15 eV for nanopillars) compared with pristine TiO₂. The photoluminescence (PL) quenching and time-correlated single-photon counting confirm efficient interfacial charge transfer, most pronounced in the nanopillar heterostructure. The demonstrated strategy provides a scalable pathway for hybrid nanostructures demonstrating significant potential in photovoltaics, photocatalysis, and photodetection.

无机-有机杂化异质结构的集成通过结合宽带隙半导体和导电聚合物的互补特性，为实现高效光电器件提供了一条有前途的途径。在此，我们首次报道了在低于70℃的衬底温度下，利用掠角沉积（GLAD）在电沉积聚（3,4-乙烯二氧噻吩）：聚（苯乙烯磺酸）（PEDOT:PSS）薄膜上直接生长垂直排列的锐钛矿型TiO2纳米柱。这种控制温度的方法在实现纳米柱结晶的同时保持了PEDOT:PSS的结构完整性。综合结构、化学、光学和光物理表征证实了TiO2/PEDOT:PSS异质结构的成功形成。拉曼分析显示强度重分布和特征聚合物峰的红移，表明强聚合物氧化物偶联。紫外可见光谱显示，与原始TiO2相比，纳米柱的光吸收增强，带隙减小（3.15 eV）。光致发光（PL）猝灭和时间相关的单光子计数证实了有效的界面电荷转移，在纳米柱异质结构中最为明显。所展示的策略为混合纳米结构提供了可扩展的途径，在光伏、光催化和光探测方面显示出巨大的潜力。

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引用次数: 0

Improvement of the photovoltaic properties of BxC/Si heterojunctions by annealing 退火法改善BxC/Si异质结的光电性能

IF 2 4区材料科学 Q3 MATERIALS SCIENCE, COATINGS & FILMS

Thin Solid Films

Pub Date : 2026-01-15 DOI: 10.1016/j.tsf.2026.140864

Tatsuya Nishida, Yusuke Hayashi, Ryoya Katayama, Yoshiharu Enta, Yushi Suzuki, Yasuyuki Kobayashi, Hideki Nakazawa

We have annealed in vacuo hydrogenated boron carbide (B_xC:H) films and B_xC:H/n-type Si (n-Si) heterojunctions prepared at room temperature via radio-frequency magnetron sputtering using a B₄C target. Our investigation focused on the effects of annealing on the optical and mechanical properties of the films and on the current-voltage characteristics of the heterojunctions. The compressive stress was reduced at 540 °C and 600 °C, and the stress changed to tensile at 670 °C. Additionally, as the annealing temperature increased, the adhesion strength increased. The bandgap energy of the as-deposited B_xC:H film was ∼1.71 eV, while those of the films annealed at 600 °C and 670 °C increased to ∼2.03 and ∼2.07 eV, respectively. The short-circuit current densities of the B_xC:H/n-Si heterojunctions annealed at 600 °C and 670 °C were ∼4.3- and ∼3.6-fold that of the as-fabricated B_xC:H/n-Si heterojunction, respectively. Furthermore, the open-circuit voltage increased by ∼1.5 times after annealing, likely due to an increase in the bandgap energy. The conversion efficiencies of the heterojunctions annealed at 600 °C and 670 °C were ∼6.3- and ∼5.0-fold that of the as-fabricated B_xC:H/n-Si heterojunction, respectively. Notably, the conversion efficiency of the heterojunction annealed at 600 °C reached 0.807%.

利用B4C靶材在室温下通过射频磁控溅射制备了真空氢化碳化硼（BxC:H）薄膜和BxC:H/n型Si （n-Si）异质结。我们的研究重点是退火对薄膜的光学和机械性能以及异质结的电流-电压特性的影响。在540°C和600°C时，压应力降低，在670°C时，应力转为拉伸。另外，随着退火温度的升高，粘接强度增大。沉积的BxC:H薄膜的能带能为~ 1.71 eV，而在600℃和670℃退火的能带能分别增加到~ 2.03和~ 2.07 eV。在600°C和670°C退火的BxC:H/n-Si异质结的短路电流密度分别是制备的BxC:H/n-Si异质结的4.3倍和3.6倍。此外，开路电压在退火后增加了~ 1.5倍，可能是由于带隙能量的增加。在600°C和670°C退火的异质结的转换效率分别是制备的BxC:H/n-Si异质结的~ 6.3倍和~ 5.0倍。值得注意的是，在600℃退火时，异质结的转换效率达到0.807%。

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引用次数: 0

Examining the impact of different metal electrodes on contact resistance and performance of zinc tin oxide thin-film transistors 研究了不同金属电极对锌锡氧化物薄膜晶体管接触电阻和性能的影响

IF 2 4区材料科学 Q3 MATERIALS SCIENCE, COATINGS & FILMS

Thin Solid Films

Pub Date : 2026-01-15 DOI: 10.1016/j.tsf.2026.140862

Jiann-Shing Jeng , Yu-Chen Chen , Jen-Sue Chen

Thin-film transistors (TFTs) were examined for their contact resistance between solution-processed zinc tin oxide (ZTO) semiconductor channels and various source/drain (S/D) electrodes, including Al, Mo, Ti, and Pt, using an external loading method. By comparing ZTO-TFTs with various S/D materials, we investigated the influence of S/D electrodes on TFT electrical properties in this study. Thin film transistors that use molybdenum S/D electrodes have the lowest width-normalized contact resistance of 232.5 Ω·cm and offer good transfer characteristics with an intrinsic field-effect mobility of 5.75 cm²/Vs, compared to other electrodes. Based on the results of the depth-profiling X-ray photoelectron spectroscopy analysis and transmission electron microscopy, this study suggests possible metal contact mechanisms (i.e., work function of the electrodes, the existence of an interface layer, and the diffusion ability of electrode materials) in solution-processed ZTO TFTs with different S/D electrodes.

采用外部加载方法，研究了溶液处理锌锡氧化物（ZTO）半导体通道与各种源/漏极（S/D）电极（包括Al， Mo， Ti和Pt）之间的薄膜晶体管（TFTs）的接触电阻。通过比较zto -TFT与各种S/D材料，我们研究了S/D电极对TFT电学性能的影响。与其他电极相比，使用钼S/D电极的薄膜晶体管具有最低的宽度归一化接触电阻232.5 Ω·cm，具有良好的传递特性，其本征场效应迁移率为5.75 cm2/Vs。基于深度剖面x射线光电子能谱分析和透射电镜分析结果，本研究提出了不同S/D电极溶液处理ZTO tft中可能的金属接触机制（即电极的功函数、界面层的存在和电极材料的扩散能力）。

引用次数: 0

Al-doped ZnO thin films for ultraviolet photodetection and solution processed PN junction formation 用于紫外光探测和溶液处理PN结形成的al掺杂ZnO薄膜

IF 2 4区材料科学 Q3 MATERIALS SCIENCE, COATINGS & FILMS

Thin Solid Films

Pub Date : 2026-01-15 DOI: 10.1016/j.tsf.2026.140853

Joel K Joseph , Thyda Lavanya , Koppula Naresh , S Suneetha , R. Thangavel , A. Karthigeyan , Kuppusamy Thangaraju

We deposit aluminium (Al)-doped ZnO (AZO) thin films by sol-gel derived spin-coating process for ultraviolet (UV) photodetectors. The substitution of Al at zinc- site in the ZnO has contributed to the conversion of n-type ZnO to have p-type characteristics by the Hall-effect measurement. The resistivity of AZO films [166.48 Ωm when compared to that (174.70 Ωm) of pristine ZnO] showed significant reduction with an increase in carrier concentration (upto 3.38 × 10¹² cm^-3) upon doping, improving the photocurrent in the films. Al-doping has slightly reduced the bandgap levels from 3.84 eV (pristine ZnO) to 3.82 eV. The decrease in transmittance (70%) of AZO films reveals the presence of increased scattering centres upon addition of dopant atoms. The AZO films have the wurtzite crystal structure with a preferential growth along the (002) plane. The X-ray photoelectron spectroscopy and Field emission scanning electron microscopic analysis confirm the presence of Al in ZnO along with a wrinkle type of surface morphology. Solution-processed UV photodetectors exhibited the improved responsivity (16.5 mA/W), current response (7 µA), detectivity (1.7 × 10¹⁰ Jones), and external quantum efficiency (5.6 %) at 3 V under the UV light illumination (365 nm at 3 mW/cm²) for 2 mol. % of Al dopant. The aggregation of Al dopants as well as its saturation cause the reduction in the photocurrent response and device efficiencies at the higher concentrations. The current-voltage characteristics of solution processed ZnO/AZO junction resembles a PN junction diode, showing its potential use in the optoelectronic device applications.

采用溶胶-凝胶衍生自旋镀膜工艺制备了用于紫外探测器的铝掺杂ZnO薄膜。通过霍尔效应测量，Al在ZnO中锌位的取代使n型ZnO转化为p型ZnO。掺杂后，随着载流子浓度的增加（高达3.38 × 1012 cm-3）， AZO薄膜的电阻率（166.48 Ωm，与原始ZnO的电阻率（174.70 Ωm）相比）显著降低，提高了薄膜中的光电流。al掺杂使带隙水平从3.84 eV（原始ZnO）略微降低到3.82 eV。AZO薄膜透过率下降（70%）表明掺杂原子增加了散射中心。AZO薄膜具有沿（002）平面优先生长的纤锌矿晶体结构。x射线光电子能谱和场发射扫描电镜分析证实ZnO中存在Al，表面形貌呈褶皱型。溶液处理的紫外光电探测器在3v紫外光照射下（365nm, 3mw /cm2），当Al掺杂量为2mol . %时，其响应率（16.5 mA/W）、电流响应（7µA）、检出率（1.7 × 1010jones）和外量子效率（5.6%）均有所提高。铝掺杂剂的聚集及其饱和导致较高浓度下光电流响应和器件效率的降低。溶液处理ZnO/AZO结的电流电压特性类似于PN结二极管，显示了其在光电器件应用中的潜在用途。

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引用次数: 0

Effect of the working pressure on the structural, morphological, optical, electrical and gas sensor properties of ZnO films grown by DC magnetron sputtering 工作压力对直流磁控溅射生长ZnO薄膜结构、形貌、光学、电学和气体传感器性能的影响

IF 2 4区材料科学 Q3 MATERIALS SCIENCE, COATINGS & FILMS

Thin Solid Films

Pub Date : 2026-01-14 DOI: 10.1016/j.tsf.2026.140863

V. Cerqueira Silva , Bill D. Aparicio Huacarpuma , Carlos A. Vilca Huayhua , F.F.H. Aragón , J.A.H. Coaquira

In this work, ZnO thin films were deposited by DC magnetron sputtering under varying working pressures and subsequently annealed in air, followed by vacuum thermal annealing. The increase of working pressure drive to the reduction of the film thickness, crystallite size, lattice constants, and to the strengthening of the (002) X-ray diffraction peak, suggesting changes in the in oxygen vacancy concentration. Scanning electron microscopy revealed the formation of randomly distributed nanorods, while UV–Vis spectroscopy data analysis evidenced the presence of defect-related levels inside the band gap. As the thickness decreases, Hall measurements show a noticeable drop in charge carrier density and mobility, which is linked to the combined impact of defects and the decreasing size of crystallites. This suggests that thicker films exhibited a higher density of zinc interstitials, whereas thinner films exhibit more oxygen vacancies (V

_{O}

), mainly associated with surface states, as supported by temperature-dependent resistance measurements and photocurrent analysis. Gas detection tests demonstrated a superior response to methane (CH

_{4}

) for thinner films at 200 °C, attributed to their higher oxygen vacancy concentration. Photocurrent and gas sensing measurements showed similar trends, indicating a common defect-driven mechanism. These results highlight the potential of tuning defect chemistry in ZnO films to optimize their performance for gas sensing and optoelectronic devices.

采用直流磁控溅射法在不同的工作压力下沉积ZnO薄膜，然后在空气中退火，再进行真空热退火。工作压力的增加导致薄膜厚度、晶粒尺寸、晶格常数的减小，x射线衍射峰（002）的增强，表明氧空位浓度发生了变化。扫描电子显微镜显示了随机分布的纳米棒的形成，而紫外可见光谱数据分析证明了带隙内存在与缺陷相关的水平。随着厚度的减小，霍尔测量显示载流子密度和迁移率明显下降，这与缺陷和晶粒尺寸减小的综合影响有关。这表明，较厚的薄膜表现出更高的锌间隙密度，而较薄的薄膜表现出更多的氧空位（VO），主要与表面状态有关，这一点得到了温度相关电阻测量和光电流分析的支持。气体检测测试表明，在200°C时，由于氧空位浓度较高，较薄的薄膜对甲烷（CH4）的响应更好。光电流和气体传感测量显示了类似的趋势，表明了共同的缺陷驱动机制。这些结果突出了在ZnO薄膜中调整缺陷化学以优化其气敏和光电子器件性能的潜力。

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引用次数: 0

Gold silicide formation and preferential grain boundary etching of gold by quartz deposition and removal 金硅化物的形成和石英沉积去除对金的优先晶界腐蚀

IF 2 4区材料科学 Q3 MATERIALS SCIENCE, COATINGS & FILMS

Thin Solid Films

Pub Date : 2026-01-14 DOI: 10.1016/j.tsf.2026.140861

Douwe Scholma, Marcel J. Rost

Gold–silicon interactions are vital for semiconducting industry, microelectromechanical systems and chemical reactions, where gold serves as a conductor, protective layers, coatings, and as a catalyst. However, gold and silicon exhibit complex behavior, even at low temperatures, including mutual inter-diffusion, alloy formation, and gold-induced silicon oxidation. Here we show that preferential grain-boundary etching occurs on highly (111)-textured polycrystalline gold films, when we sputter-deposit a thin quartz film that we remove afterwards via reactive ion etching. During the quartz deposition silicon atoms diffuse, enabled by the high dislocation and vacancy density, into the grain boundaries of gold forming there a gold-silicide. A gold–silicon reaction happens also on the flat (111) terraces, however, limited by outwards-diffusion of gold, its layer thickness is restricted to around 7 nm. Upon reactive ion etching the gold-silicide is removed leading to small, 6 nm-high gold islands on the flat terraces and grooves at the grain boundaries as deep as 15 nm. Although the maximum sample temperature was only 150 °C, we surprisingly have evidence that Au

_{4}

Si is formed, which is the first stable low-temperature composition occurring at the eutectic temperature of 363 °C. The above procedure can be used for preferential grain boundary etching of gold, gold nanoparticle creation, and delivers further insight into the complex nature of gold-silicide formation.

金-硅相互作用对于半导体工业、微机电系统和化学反应至关重要，在这些领域，金可以作为导体、保护层、涂层和催化剂。然而，即使在低温下，金和硅也表现出复杂的行为，包括相互扩散、合金形成和金诱导的硅氧化。在这里，我们表明，当我们溅射沉积一层薄薄的石英膜，然后通过反应离子蚀刻去除时，在高度（111）纹理的多晶金膜上发生了优先的晶界蚀刻。在石英沉积过程中，硅原子在高位错和空位密度的作用下扩散到金的晶界，形成金硅化物。金-硅反应也发生在平坦的（111）阶地上，然而，由于金向外扩散的限制，其层厚度被限制在7纳米左右。在反应离子蚀刻后，金硅化物被去除，导致在平坦的梯田上形成6纳米高的小金岛，在晶界处形成15纳米深的凹槽。虽然样品的最高温度只有150℃，但令人惊讶的是，我们有证据表明形成了Au4Si，这是在363℃共晶温度下出现的第一个稳定的低温成分。上述过程可用于金的优先晶界蚀刻，金纳米颗粒的产生，并进一步深入了解金硅化物形成的复杂性。

{"title":"Gold silicide formation and preferential grain boundary etching of gold by quartz deposition and removal","authors":"Douwe Scholma, Marcel J. Rost","doi":"10.1016/j.tsf.2026.140861","DOIUrl":"10.1016/j.tsf.2026.140861","url":null,"abstract":"<div><div>Gold–silicon interactions are vital for semiconducting industry, microelectromechanical systems and chemical reactions, where gold serves as a conductor, protective layers, coatings, and as a catalyst. However, gold and silicon exhibit complex behavior, even at low temperatures, including mutual inter-diffusion, alloy formation, and gold-induced silicon oxidation. Here we show that preferential grain-boundary etching occurs on highly (111)-textured polycrystalline gold films, when we sputter-deposit a thin quartz film that we remove afterwards via reactive ion etching. During the quartz deposition silicon atoms diffuse, enabled by the high dislocation and vacancy density, into the grain boundaries of gold forming there a gold-silicide. A gold–silicon reaction happens also on the flat (111) terraces, however, limited by outwards-diffusion of gold, its layer thickness is restricted to around 7 nm. Upon reactive ion etching the gold-silicide is removed leading to small, 6 nm-high gold islands on the flat terraces and grooves at the grain boundaries as deep as 15 nm. Although the maximum sample temperature was only 150 °C, we surprisingly have evidence that Au<span><math><msub><mrow></mrow><mrow><mn>4</mn></mrow></msub></math></span>Si is formed, which is the first stable low-temperature composition occurring at the eutectic temperature of 363 °C. The above procedure can be used for preferential grain boundary etching of gold, gold nanoparticle creation, and delivers further insight into the complex nature of gold-silicide formation.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"835 ","pages":"Article 140861"},"PeriodicalIF":2.0,"publicationDate":"2026-01-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145969295","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Adjustment mechanism of surface properties to induce copper plating on typical polymer films 典型聚合物薄膜表面性能诱导镀铜的调节机理

IF 2 4区材料科学 Q3 MATERIALS SCIENCE, COATINGS & FILMS

Thin Solid Films

Pub Date : 2026-01-13 DOI: 10.1016/j.tsf.2026.140860

Jiajun Xie, Xueyang Dun, Meiyu Wei, Mingyong Wang

Composite copper foil with a copper-polymer-copper sandwich structure is a promising negative electrode current collector for high-energy-density lithium-ion batteries. Electroless copper plating is an attractive method to directly prepare composite copper foil, but limited by intrinsic inert characteristics of polymer surface. Surface properties of various polymer films are obviously different. The corresponding activation mechanisms are also unclear. This work identifies the surface active sites of typical polymers, i.e. polyimide (PI), polyethylene terephthalate (PET), and polypropylene (PP). The pathway and mechanism for surface modification and activation of polymer are explored. It is confirmed that reactive groups (such as -COOH and -OH) are formed from carbonyl groups (C = O) on PI and PET by NaOH modification. However, PP cannot be modified or activated due to overall inertness. The modified PI can be activated by AgNO₃ to produce COO-Ag active sites for electroless copper plating. However, the modified PET cannot be directly activated by AgNO₃ due to less reactive groups. After plasma etching to graft active functional groups on PET surface, and Ag⁺ can also be anchored on PET surface by NaOH modification and AgNO₃ activation. Composite copper foil with PI or PET polymer film is successfully prepared. This work clarifies the surface properties and the corresponding activation mechanism, which is helpful for the convenient preparation of composite copper foil by electroless copper plating.

具有铜-聚合物-铜夹层结构的复合铜箔是一种很有前途的高能量密度锂离子电池负极集流材料。化学镀铜是一种有吸引力的直接制备复合铜箔的方法，但受聚合物表面固有惰性特性的限制。不同聚合物薄膜的表面性能有明显差异。相应的激活机制也不清楚。这项工作确定了典型聚合物的表面活性位点，即聚酰亚胺（PI），聚对苯二甲酸乙二醇酯（PET）和聚丙烯（PP）。探讨了聚合物表面改性和活化的途径和机理。通过NaOH改性，证实了PI和PET上的羰基（C = O）可形成反应基团（-COOH和-OH）。然而，由于整体惰性，PP不能被修改或激活。改性后的PI可被AgNO3活化生成co - ag活性位点，用于化学镀铜。然而，由于活性基团较少，改性后的PET不能被AgNO3直接活化。等离子体刻蚀后将活性官能团接枝到PET表面，通过NaOH修饰和AgNO3活化，Ag+也可以锚定在PET表面。成功地制备了PI或PET聚合物薄膜复合铜箔。本工作阐明了复合铜箔的表面性能及其活化机理，为化学镀铜制备复合铜箔提供了方便。

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引用次数: 0

Investigation of the microstructure, mechanical and tribological properties of CrAlCN composite coatings with various acetylene flow rates 不同乙炔流量下CrAlCN复合涂层的微观结构、力学性能和摩擦学性能研究

IF 2 4区材料科学 Q3 MATERIALS SCIENCE, COATINGS & FILMS

Thin Solid Films

Pub Date : 2026-01-13 DOI: 10.1016/j.tsf.2026.140859

Qiong Zhou , Xunhu Wang , Biao Huang , Qiang Chen , Dandan Liang , Ergeng Zhang , Zhibin Lou

The CrAlCN composite coatings were deposited using cathodic arc technology, and the effects of acetylene (C₂H₂) flow rates on the microstructure, mechanical properties, and tribological performance of CrAlCN coatings were investigated. The results reveal that the coating grains are progressively refined, and the crystallographic orientation shifts from (111) and (200) planes to a dominant (200) orientation with increasing C₂H₂ flow rate from 0 to 60 sccm. The hardness of the coatings first increases and then decreases, and the maximum hardness is achieved at a C₂H₂ flow rate of 20 sccm. The precipitation of amorphous carbon induces a structural transformation from a single-phase crystalline structure to a nanocrystalline /amorphous composite at a C₂H₂ flow rate of 60 sccm, thereby leading to the reduction in the coefficient of friction (COF). The wear mechanism of the nc-CrAlCN/a-C composite coatings against Si₃N₄ counter-balls is characterized by mild adhesive and abrasive wear. The formed lubricating film is prone to being squeezed out of the wear track, resulting in a low COF but a significantly increased wear rate at high C₂H₂ flow rates. In contrast, the minimum wear rate was observed at a flow rate of 20 sccm, where a continuous carbon-rich lubricating layer is formed on the wear track. Therefore, the optimal C₂H₂ flow rate significantly optimizes mechanical properties and boosts the tribological performance of the CrAlCN coatings.

采用阴极电弧沉积工艺制备了CrAlCN复合涂层，研究了乙炔（C2H2）流速对CrAlCN涂层组织、力学性能和摩擦学性能的影响。结果表明：随着C2H2流量从0 ~ 60 sccm的增加，涂层晶粒逐渐细化，晶体取向由（111）面和（200）面向（200）面转变；涂层的硬度先升高后降低，在C2H2流速为20 sccm时硬度达到最大值。当C2H2流速为60 sccm时，非晶碳的析出导致结构由单相晶结构转变为纳米晶/非晶复合结构，从而导致摩擦系数（COF）降低。nc-CrAlCN/a-C复合涂层对Si3N4反球的磨损机制表现为轻度粘着磨损和磨粒磨损。形成的润滑膜容易被挤出磨损轨迹，导致低COF，但在高C2H2流量下，磨损率显著增加。相比之下，在流量为20 sccm时观察到最小磨损率，在磨损轨迹上形成连续的富碳润滑层。因此，最佳C2H2流量可以显著优化CrAlCN涂层的力学性能，提高涂层的摩擦学性能。

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引用次数: 0

Preparation of BaTiS3 film under lower temperature and its Application in Photodetectors 低温下BaTiS3薄膜的制备及其在光电探测器中的应用

IF 2 4区材料科学 Q3 MATERIALS SCIENCE, COATINGS & FILMS

Thin Solid Films

Pub Date : 2026-01-10 DOI: 10.1016/j.tsf.2026.140858

Chaomin Cai , Ruiming Li , Siyu Zhang , Ruitao He , Yuxia Sun , Man Yang , Ying Liu , Hongri Liu

Barium titanium sulfide (BaTiS₃), a quasi-one-dimensional (quasi-1D) chalcogenide, exhibits excellent potential for polarization detection owing to its remarkable optical anisotropy. Moreover, both theoretical computations and experimental investigations have predicted that BaTiS₃ possesses a tunable narrow bandgap within the range of 0.27 - 0.9 eV. However, it has rarely been fabricated into a film morphology and applied in photodetectors, primarily due to the common challenges of preparing ternary sulfide films. Current synthesis of BaTiS₃ predominantly employs a modified chemical vapor transport (CVT) approach, with the core reaction temperature maintained at 1000–1100 °C. In this study, BaTiS₃ powder was fabricated using BaS and TiS₂ as raw materials. With the assistance of an excess of sulfur, the preparation temperature was reduced to 600 °C, and the underlying growth mechanism was systematically explored. Subsequently, BaTiS₃ polycrystalline thin films were prepared through a microcrystalline reconstruction method. Based on this, self-powered photodetectors were fabricated. These photodetectors demonstrated excellent detection performance within the wavelength range from 300 to 560 nm, along with a responsivity of 4.60 mA W⁻¹. Our research not only explored a common growth method for barium-based ternary sulfides but also demonstrated the application of quasi-1D BaTiS₃ in film-based visible light photodetectors.

硫化钛钡（BaTiS3）是一种准一维（准1d）硫系化合物，由于其显著的光学各向异性，具有极好的偏振探测潜力。此外，理论计算和实验研究都预测了BaTiS3在0.27 ~ 0.9 eV范围内具有可调谐的窄带隙。然而，它很少被制造成薄膜形态并应用于光电探测器，主要是由于制备三元硫化物薄膜的共同挑战。目前合成BaTiS₃主要采用改进的化学气相传输（CVT）方法，核心反应温度保持在1000-1100℃。本研究以BaS和TiS2为原料制备了BaTiS3粉体。在过量硫的辅助下，将制备温度降至600℃，并对其生长机理进行了系统的探讨。随后，通过微晶重构法制备了BaTiS3多晶薄膜。在此基础上，制备了自供电光电探测器。这些光电探测器在300到560nm的波长范围内表现出优异的探测性能，其响应度为4.60 mA W⁻¹。我们的研究不仅探索了一种常见的钡基三元硫化物的生长方法，而且展示了准一维BaTiS3在薄膜可见光光电探测器中的应用。

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引用次数: 0

A Raman spectroscopic approach to hydrogen presence in diamond-like carbon using the hydrogen indicator 使用氢指示剂的类金刚石碳中氢存在的拉曼光谱方法

IF 2 4区材料科学 Q3 MATERIALS SCIENCE, COATINGS & FILMS

Thin Solid Films

Pub Date : 2026-01-08 DOI: 10.1016/j.tsf.2026.140854

Woo-young Lee , Minkyung Choi , Jongkuk Kim , Kyoung-il Moon , Jong-oh Ham , Jin-yong Sim , Byoung-il Cho

Diamond-like carbon (DLC) coatings are widely used due to their excellent mechanical and tribological properties; however, reliable evaluation of hydrogen content remains a long-standing challenge. In this study, we experimentally identified a Raman peak at 860 cm⁻¹, referred to as the Hydrogen Indicator (HI) peak, as a qualitative marker of hydrogen incorporation in DLC coatings. Twelve DLC coatings were deposited under varying process conditions, including both hydrogenated and hydrogen-free types, and their bonding structures were analyzed by Raman spectroscopy. The HI peak was consistently observed in all hydrogenated coatings but absent in hydrogen-free ones, clearly distinguishing the two groups. The assignment was validated through consistent observation across twelve DLC coatings with and without hydrogen. These findings demonstrate that the HI peak provides a simple, non-destructive, and robust approach for identifying hydrogen incorporation in DLC coatings, offering significant potential for process control and quality assurance in advanced industrial applications.

类金刚石（DLC）涂层因其优异的机械性能和摩擦学性能而得到广泛应用；然而，氢含量的可靠评估仍然是一个长期的挑战。在这项研究中，我们通过实验确定了860厘米处的拉曼峰，即氢指示剂（HI）峰，作为DLC涂层中氢含量的定性标志。在不同的工艺条件下沉积了12种DLC涂层，包括加氢型和无氢型，并通过拉曼光谱分析了它们的键合结构。在所有的氢化涂层中都观察到一致的HI峰，而在无氢涂层中没有，明显区分了两组。通过对12种含氢和不含氢DLC涂层的一致观察，验证了该分配。这些发现表明，HI峰为识别DLC涂层中的氢掺杂提供了一种简单、非破坏性和可靠的方法，为先进工业应用中的过程控制和质量保证提供了巨大的潜力。

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引用次数: 0