Thin Solid Films最新文献

{"title":"The impact of willemite Zn2SiO4 phase in B1 to B2 type structural phase transformation in CdxZn1-xO composite thin films","authors":"Arkaprava Das ,&nbsp;Marcin Zając ,&nbsp;Wei-Hsiang Huang ,&nbsp;Chi-Liang Chen ,&nbsp;Asokan Kandasami ,&nbsp;Carla Bittencourt","doi":"10.1016/j.tsf.2025.140616","DOIUrl":"10.1016/j.tsf.2025.140616","url":null,"abstract":"<div><div>This study explores the influence of willemite Zn₂SiO₄ phase upon the structural phase transformation from the B1 (NaCl) to B2 (CsCl) phase in Cd_xZn_1-xO (<em>x</em> = 0.20, and 0.60) composite thin films. X-ray diffraction and Raman spectroscopy analyses show that at an annealing temperature of 900 °C, the B2 phase of CdO nanoparticles becomes achievable with a relative atomic concentration of 60 % Cd, whereas it is absent with 20 % Cd concentration. The presence of the willemite Zn₂SiO₄ phase for 60 % Cd concentration at 900 °C annealing temperature, which plays an important role in this transformation, was confirmed by analyzing the Zn <em>L</em>_3,2 and O <em>K</em> edges X-ray absorption near edge spectroscopy, Si 2<em>p</em> edge X-ray photoelectron spectroscopy, and a broad emission in the green spectral region of the photoluminescence spectra. Electron microscopy indicates the out-diffusion of Zn₂SiO₄ nanoparticles from the film-substrate interface to the film surface, facilitated by the kinetic energy gained during high-temperature thermal annealing. The larger unit cell volume of the trigonal Zn₂SiO₄ phase was identified as inducing the necessary local pressure to trigger the B1 to B2 phase transformation in the CdO nanoparticles. Additionally, simulations using Zn <em>K</em> edge extended absorption fine structure suggest that the local environment around the Zn atoms remain unchanged during phase transition. Cross-sectional transmission electron microscopy images reveal the presence of an amorphous SiO_x layer at the film-substrate interface, facilitating atomic inter-diffusion and leading to the formation of the Zn₂SiO₄ nanoparticles. It is shown that a Cd concentration exceeding 40 % in the ZnO matrix enables the achievement of the experimentally challenging high-pressure B2 phase.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"812 ","pages":"Article 140616"},"PeriodicalIF":2.0,"publicationDate":"2025-01-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143179456","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A multilayered black Ni-P solar absorbent material with double physical vapor deposited Ag and Al selective nanocoatings","authors":"Víctor Octavio Martínez Hernández ,&nbsp;Adrián Sosa Domínguez ,&nbsp;José de Jesús Pérez Bueno ,&nbsp;José Santos Cruz ,&nbsp;Francisco Javier de Moure Flores","doi":"10.1016/j.tsf.2025.140614","DOIUrl":"10.1016/j.tsf.2025.140614","url":null,"abstract":"<div><div>This study presents a single proposed sample type designed to combine high solar absorption efficiency and enhanced corrosion resistance, a multilayer solar absorber material comprising a black nickel-phosphorus base layer, for absorption in the visible to short-wavelength infrared. It was covered with nanometric Ag (∼7 nm) and Al (∼5 nm) thin films proposed as complementary selective layers to reflect in the mid- and long-wavelength infrared to avoid losing energy in hot surfaces by radiation. This multilayer optimizes solar absorption but also possesses corrosion resistance with the Al₂O₃ self-passivating layer of Al, albeit with limitations due to heterogeneity and the topography of the underlying black Ni-P layer. The Al layer reduced the corrosion rate from 0.28 for steel to 0.19 mmpy for the full multilayer system, despite introducing microgalvanic interactions in chloride-rich environments that increased localized corrosion signals. The multilayer absorption system achieved total absorptions of about 91 % for steel/Ni-P/Ag and about 93 % for steel/Ni-P/Ag/Al/Al₂O₃ in the visible/near-wavelength/short-wavelength infrared, with an overall absorption of up to 99 %. This work highlights the required balance between optical performance and electrochemical stability attained with multilayer systems, making them a promising solution for sustainable solar energy applications.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"812 ","pages":"Article 140614"},"PeriodicalIF":2.0,"publicationDate":"2025-01-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143179473","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Ion beam assisted deposition of a thin film metallic glass","authors":"Vrishank Jambur,&nbsp;Zijian Wang,&nbsp;John Sunderland,&nbsp;Soohyun Im,&nbsp;Xuanxin Hu,&nbsp;Sakiru Akinyemi,&nbsp;John H. Perepezko,&nbsp;Paul M. Voyles,&nbsp;Izabela Szlufarska","doi":"10.1016/j.tsf.2025.140612","DOIUrl":"10.1016/j.tsf.2025.140612","url":null,"abstract":"<div><div>We have used ion beam assisted deposition to modify the properties of a thin film Pd_77.5Cu₆Si_16.5 metallic glass without altering the composition. By irradiating the film surface during deposition, the mobility of surface atoms is enhanced, leading to the development of atomically smooth films with increased hardness and kinetic stability. Further, increasing the ion beam energy changes the crystallization pathways in the metallic glass films, pointing to changes in as-deposited structure. This approach to tune the properties of metallic glass films may unlock access to previously unobserved structural states.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"812 ","pages":"Article 140612"},"PeriodicalIF":2.0,"publicationDate":"2025-01-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143179472","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Processable graphene derivative as an alternative carbon-based electrode","authors":"Alvaro Guerra-Him ,&nbsp;Julio C. Carrillo-Sendejas ,&nbsp;José-Luis Maldonado ,&nbsp;Yaily Fernández-Arteaga ,&nbsp;Maiby Valle-Orta ,&nbsp;Uriel Sierra ,&nbsp;Salvador Fernández","doi":"10.1016/j.tsf.2025.140610","DOIUrl":"10.1016/j.tsf.2025.140610","url":null,"abstract":"<div><div>A processable graphene derivative (PGD) is presented for potential application in organic solar cells (OSCs). PGD was mechanically synthesized, suspended in water and used as an alternative anode in two configurations: 1) Three-layer graphene anode (TLGA): PGD/PH1000/PH1000, where PH1000 is a conductive polymer; PGD was deposited by drop-casting and treated with hydriodic acid, to recover its electrical properties, and with UV-ozone plasma, to improve the adhesion of the next layer (PH1000); it achieved a transmittance (T) (at 550 nm) ∼ 74 % and a resistance (R) ∼ 170 Ω/sq. 2) Hybrid multilayer graphene anode (HMGA): PH1000:PGD (4:1 v/v), 6 layers were deposited by spin-coating and treated with hydriodic acid; this electrode showed T (at 550 nm) ∼ 79 % and R ∼ 134 Ω/sq. As a concept test, alternative anodes TLGA and HMGA were implemented in PM6:Y7-based OSCs to confirm the application of PGD. For the alternative cathode, Field's metal, a eutectic alloy composed of Sn, Bi and In, vacuum free deposited, was used; the achieved efficiencies were of ∼ 8.7 % for the control OSCs, ∼ 4.0 % for TLGA and ∼ 1.4 % for HMGA.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"812 ","pages":"Article 140610"},"PeriodicalIF":2.0,"publicationDate":"2025-01-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143179454","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Effect of fabrication conditions on Cu film formation on Al2O3 and AlN substrates by friction stirring","authors":"Hirosuke Sonomura ,&nbsp;Ryota Nonami ,&nbsp;Gentoku Yoshida ,&nbsp;Keigo Nakano ,&nbsp;Kazuaki Katagiri ,&nbsp;Tomoatsu Ozaki","doi":"10.1016/j.tsf.2024.140599","DOIUrl":"10.1016/j.tsf.2024.140599","url":null,"abstract":"<div><div>The conditions for Cu film formation by friction stirring on Al₂O₃ and AlN substrates were investigated to develop a Cu circuit pattern formation technology. Different consumable tool geometries resulted in different processing interface temperatures, which had a significant effect on Cu film formation. A Cu film was formed effectively on the AlN substrate, which had high thermal conductivity, by heating the substrate at 100 °C. Finite element simulation revealed that when the substrate was heated at 100 °C, the processing interface temperature was 78 °C higher, even with a weak tool pushing force of 0.3 kN. The rod tool roughened the substrate surface more than the pipe tool, and the Cu film was mechanically bonded to the substrate with higher adhesion strength. Friction stirring was confirmed to be an effective tool for Cu circuit pattern formation.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"810 ","pages":"Article 140599"},"PeriodicalIF":2.0,"publicationDate":"2025-01-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143167816","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"The orientation relationships of Ag3Al/Ag interfaces and formation sequence of Ag2Al and Ag3Al at the Ag/Al interface","authors":"Kuang-Kuo Wang,&nbsp;Dershin Gan","doi":"10.1016/j.tsf.2024.140598","DOIUrl":"10.1016/j.tsf.2024.140598","url":null,"abstract":"<div><div>The silver-aluminum interface reaction has continued to attract significant interest in recent years, particularly with the development of silver and silver alloy wires for advanced wire bonding techniques. The purpose of this study is to investigate the orientation relationships and interface between mu (μ)-Ag₃Al and Ag, as well as formation sequence of gamma (γ)-Ag₂Al and μ-Ag₃Al at the Ag/Al interface. The orientation relationships and interfaces between μ-Ag₃Al and Ag have been studied by transmission electron microscopy (TEM). Epitaxial (001)_Ag thin films was grown on the NaCl (001) surface and then Al was evaporated onto the Ag film form μ-Ag₃Al. Results showed that the γ-Ag₂Al first formed at Ag/Al interface and then the μ-Ag₃Al formed after annealing at 350 °C for 5 min. The orientation relationships were found: (1) [221]_μ//[001]_Ag (zone axis), <span><math><mrow><mo>(</mo><mrow><mover><mn>1</mn><mo>¯</mo></mover><mn>10</mn></mrow><mo>)</mo></mrow></math></span>_μ//(110)_Ag, and <span><math><mrow><mo>(</mo><mrow><mn>11</mn><mover><mn>4</mn><mo>¯</mo></mover></mrow><mo>)</mo></mrow></math></span>_μ//<span><math><mrow><mo>(</mo><mrow><mover><mn>1</mn><mo>¯</mo></mover><mn>10</mn></mrow><mo>)</mo></mrow></math></span>_Ag at γ-Ag₂Al/Ag interface and (2) [0001]_γ//[221]_μ (zone axis), <span><math><mrow><mo>(</mo><mrow><mover><mn>1</mn><mo>¯</mo></mover><mn>100</mn></mrow><mo>)</mo></mrow></math></span>_γ//<span><math><mrow><mo>(</mo><mrow><mn>1</mn><mover><mn>1</mn><mo>¯</mo></mover><mn>0</mn></mrow><mo>)</mo></mrow></math></span>_μ, and <span><math><mrow><mo>(</mo><mrow><mover><mn>1</mn><mo>¯</mo></mover><mover><mn>1</mn><mo>¯</mo></mover><mn>20</mn></mrow><mo>)</mo></mrow></math></span>_γ//<span><math><mrow><mo>(</mo><mrow><mn>11</mn><mover><mn>4</mn><mo>¯</mo></mover></mrow><mo>)</mo></mrow></math></span>_μ at Ag/Al interface. The μ/Ag and γ/μ interfaces were further analyzed by the surface structures and the orientation relationships.</div><div>That γ-Ag₂Al forms before μ-Ag₃Al in the solid-state Ag/Al interfacial reactions was discussed by heterogeneous nucleation theory. Analysis of the interfaces showed that the γ-Ag₂Al/Ag interfacial energies with better interfacial coherency were lower than those that of the μ-Ag₃Al/Ag. In addition, the energy of formation of γ-Ag₂Al is slightly larger than that of μ-Ag₃Al. Therefore γ-Ag₂Al forms before μ-Ag₃Al.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"810 ","pages":"Article 140598"},"PeriodicalIF":2.0,"publicationDate":"2025-01-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143167340","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Zinc oxide nanorods and nanotubes arrays grown on carbon fabric by microwave hydrothermal method for self-powered piezoelectric/triboelectric sensors","authors":"S.I. Petrushenko ,&nbsp;K. Adach ,&nbsp;M. Fijalkowski ,&nbsp;V.R. Kopach ,&nbsp;Y.M. Shepotko ,&nbsp;S.V. Dukarov ,&nbsp;R.V. Sukhov ,&nbsp;A. Fedonenko ,&nbsp;A.L. Khrypunova ,&nbsp;N.P. Klochko","doi":"10.1016/j.tsf.2025.140601","DOIUrl":"10.1016/j.tsf.2025.140601","url":null,"abstract":"<div><div>The development of efficient piezoelectric/triboelectric textile materials for highly sensitive wearable autonomous pressure, shock and vibration sensors holds promise for use in health monitoring, motion detection, human-machine interaction, and active touch matrices for electronic skin of soft robots. In this work, arrays of zinc oxide nanorods (ZnONR) and nanotubes (ZnONT) oriented vertically on the surface of carbon fabric (CF) were grown from aqueous solutions with concentrations of zinc nitrate and hexamethylenetetramine (HMTA) in the range of 50–100 mM using a seed-mediated microwave hydrothermal method. The results of tests of experimental samples of pressure and impact sensors based on various compositions of double-electrode and single-electrode piezoelectric/triboelectric nanogenerators (PTENGs) of contact-separation mode with textile parts of CF/ZnONR and CF/ZnONT confirmed the coupling of piezoelectric and triboelectric effects. The tests have shown that the efficiency of all developed PTENGs increases with increasing contact area of nanostructured zinc oxide arrays, and therefore ZnO nanorods have proven to be more promising for use in all types of PTENGs. The best responses were recorded for pressure, impact and vibration sensors based on PTENG with a piezoelectric/triboelectric textile part CF/ZnONR obtained by the microwave hydrothermal method in the solution of 100 mM Zn(NO₃)₂ and 100 mM HMTA. Comparison of their sensitivity with the sensitivity data of wearable triboelectric pressure and strain sensors, as well as hybrid piezotriboelectric and triboelectric flexible vibration sensors, showed that the sensitivity data obtained in this work is on the same level or superior to the best state-of-the-art.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"810 ","pages":"Article 140601"},"PeriodicalIF":2.0,"publicationDate":"2025-01-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143167341","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Caffeine-driven n-type doping in multilayer MoS2 field effect transistor","authors":"Muhammad Shamim Al Mamun ,&nbsp;Tsuyoshi Takaoka ,&nbsp;Tadahiro Komeda","doi":"10.1016/j.tsf.2024.140591","DOIUrl":"10.1016/j.tsf.2024.140591","url":null,"abstract":"<div><div>It has been reported that the electrical characteristics of molybdenum disulfide field effect transistors can be customized through the chemical integration of mechanically exfoliated multilayer MoS₂ by caffeine. The device was completely submerged in the caffeine solution for 15 s, dried with a N₂ cannon, and its electrical characteristics were assessed. Caffeine causes n-doping in the multilayer MoS₂, as confirmed by transfer characteristics, Raman spectroscopic analysis and X-ray Photoelectron Spectroscopy. After the doping procedure, the threshold voltage moved to the left, and the electrical property increased at room temperature outside without causing any damage to the device. The Raman spectrum's downward trend in peak shifting of the <em>E</em>₂ _g and <em>A</em>₁ _g peaks following the functionalization of caffeine molecules shows an increase in electron concentration on the MoS₂ surface. In comparison to the pristine device, the extracted field effect mobility increased by a factor of 5.5. Compared to the pristine device (4.6 V/decade), the subthreshold swing was decreased to 1.6 V/decade. After doping, the device was annealed for 15 min at 90 °C, which brought it very near to being immaculate. Additionally, the n-type doping by caffeine was shown by X-ray Photoelectron Spectroscopy analysis. The MoS₂ surface exhibited caffeine adsorption, as demonstrated by the Time-of-Flight Secondary Ionization Mass Spectrometry measurement.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"809 ","pages":"Article 140591"},"PeriodicalIF":2.0,"publicationDate":"2025-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143177611","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Electrodeposition and electrocatalytic performance of Pd-Ni alloy films from aqueous solutions for enhanced electrochemical hydrogen evolution","authors":"Wangping Wu,&nbsp;Zhengjie Xing,&nbsp;Liu Ju","doi":"10.1016/j.tsf.2024.140587","DOIUrl":"10.1016/j.tsf.2024.140587","url":null,"abstract":"<div><div>Palladium-nickel (Pd-Ni) alloy films were electrodeposited on copper supports. The influence of deposition parameters on the surface morphology and chemical composition of the films was investigated. The surface morphology, chemical composition and elemental states of the films were characterized using scanning electron microscopy, energy-dispersive spectroscopy and X-ray photoelectron spectroscopy, respectively. The electrocatalytic performance of the selected films was evaluated through linear sweep voltammetry, electrochemical impedance spectroscopy and cyclic voltammetry. The results demonstrate that the deposition parameters significantly influenced the deposition rate of the films. The deposition rate increased with the current density, showing a change trend in initially increase and then decrease with the rise in bath temperature and deposition time. The particle size of the film increased with both current density and deposition time. Pd-Ni films exhibited the face-centered cubic structure of polycrystalline phase, the grain size and lattice parameters decreased as the Ni-content increased. Pd₇₈Ni₂₂ film with many spherical particles exhibited good electrocatalytic activity in alkaline solution, requiring only the overpotential of 162 mV to achieve a current density of 10 mA·cm⁻², which demonstrated a low Tafel slope of 47.6 mV·dec⁻¹ and an exchange current density as high as 0.326 mA·cm⁻².</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"809 ","pages":"Article 140587"},"PeriodicalIF":2.0,"publicationDate":"2025-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143177614","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Influence of atomic ratio of Mg to Sn on thermoelectric properties of Mg2Sn films","authors":"Ying Liu ,&nbsp;Guihong Song ,&nbsp;Kaiping Tai ,&nbsp;Zhi Yu ,&nbsp;Yijun Ran ,&nbsp;Juan He ,&nbsp;Yusheng Wu","doi":"10.1016/j.tsf.2024.140585","DOIUrl":"10.1016/j.tsf.2024.140585","url":null,"abstract":"<div><div>The influence of Mg/Sn ratio of on the thermoelectric properties of Mg-Sn films was deeply studied through preparing a series of Mg₂Sn films with different Mg and Sn atomic ratios on SiO₂/Si substrate. The results showed that the phase structure of the deposited Mg₂Sn films varied from a metastable orthogonal phase to a mixture of orthogonal and cubic phase, and then to a highly symmetric cubic phase with increasing [Mg]/[Sn]. Meanwhile, with increasing [Mg]/[Sn], the carrier concentration and electrical conductivity of the deposited films first decreased and then increased, while the carrier mobility and Seebeck coefficient varied in an opposite trend. The cubic Mg₂Sn phase film with [Mg]/[Sn] = 1.94 has the highest Seebeck coefficient and appropriate electrical conductivity, reaching the highest power factor of 3.10 μW cm^-1 K^-2 at 235 °C and figure of merit of 0.059 at 125 °C.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"809 ","pages":"Article 140585"},"PeriodicalIF":2.0,"publicationDate":"2025-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143178137","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}